JP2004172299A - Housing package for semiconductor element and semiconductor device using same - Google Patents

Housing package for semiconductor element and semiconductor device using same Download PDF

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Publication number
JP2004172299A
JP2004172299A JP2002335670A JP2002335670A JP2004172299A JP 2004172299 A JP2004172299 A JP 2004172299A JP 2002335670 A JP2002335670 A JP 2002335670A JP 2002335670 A JP2002335670 A JP 2002335670A JP 2004172299 A JP2004172299 A JP 2004172299A
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wiring conductor
connector
wire
semiconductor element
ghz
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JP3808423B2 (en
Inventor
Shin Matsuda
伸 松田
Tetsuo Hirakawa
哲生 平川
Yoshinobu Sawa
義信 澤
Hisayoshi Wada
久義 和田
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem wherein transmission characteristics in a housing package for a semiconductor element significantly deteriorates due to reflection and the like when electrical signals of high frequency are transmitted through the housing package. <P>SOLUTION: The housing package is composed of a substrate 1 provided with a mount 1a mounted with a semiconductor element 6 that transmits/receives electrical signals of high frequency, grounding wiring conductors 2b and a first wiring conductor 2a which are formed on the substrate 1, grounding pads 3b and an input/output pad 3a which are electrically connected to the grounding wiring conductor 2b and the first wiring conductor 2a, respectively, a second wiring conductor 4 which is formed on the substrate 1, and a connector 5 which is composed of a conductive wire 5a electrically connected to the second wiring conductor 4 and an insulating enclosure 5b. The connection length of the wire 5a of the connector 5 to the second wiring conductor 4 is 800 μm or less, and part of the wire 5a of the connector 5 is inserted into a recess 4a cut in the surface of the second wiring conductor 4 so as to be connected to the wiring conductor 4. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は高周波の電気信号を送受信する半導体素子を収納する半導体素子収納用パッケージ、およびその半導体素子収納用パッケージを用いて成る半導体装置に関するものである。
【０００２】
【従来の技術】
従来、電気信号を送受信する半導体素子を収容するための半導体素子収納用パッケージは、一般に、酸化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミックス、窒化アルミニウム質焼結体等の電気絶縁材料から成り、上面に半導体素子の搭載部が形成された基体と、タングステン、モリブデン、マンガン、銅、銀等の金属材料から成り、基体の半導体素子搭載部から下面にかけて被着導出された複数の電気信号の入出力用およびグランド用の配線導体と、この配線導体と電気的に接続するようにして基体の下面に形成された複数個のグランド用パッドおよび入出力用パッドと、基体の搭載部より上面もしくは側面にかけて導出されている出入力用の配線導体と、導電性の線材と絶縁性の外囲体とから成り、線材の一端が出入力用配線導体に接続され、他端が外部に導出されているコネクターとにより構成されている。
【０００３】
かかる半導体素子収納用パッケージは、その搭載部に電気信号を送受信する半導体素子がＡｕ−Ｓｎろう材あるいは半田等の接合材を介して接着固定されるとともに、半導体素子の電極が入出力用配線導体（第１配線導体）、グランド用配線導体および出入力用配線導体（第２配線導体）にボンディングワイヤや接続用リボン、半田等の導電性接続材を介して接続され、その後、必要に応じて蓋体等で半導体素子を封止することによって半導体装置となる。
【０００４】
また前記半導体装置は基体の下面に形成されているグランド用パッドおよび入出力用パッドを外部電気回路基板の回路導体に半田バンプ等を介し接続させることによって内部に収容する半導体素子が外部電気回路に接続され、同時にコネクターに同軸ケーブル等を介し外部の通信装置等の外部機器を接続させることによって半導体素子と外部機器とが接続するようになっている。
【０００５】
なお、前記半導体装置に使用されている半導体素子は複数の電気信号を合成して一つの電気信号に変換する、或いは一つの電気信号を分離して複数の電気信号に変換する機能を有しており、第１配線導体を介して入力される複数の周波数帯域が低い電気信号は半導体素子で合成されて一つの周波数帯域が高い電気信号となり、この周波数帯域の高い電気信号は第２配線導体を介してコネクターに伝送されるとともにコネクターより外部の通信装置等の外部機器に伝送され、またコネクターを介して外部機器より伝送された周波数帯域の高い電気信号は半導体素子で複数の周波数帯域が低い電気信号に変換され、各々の周波数帯域の低い電気信号は第１配線導体を介して外部電気回路に伝送されることとなる。
【０００６】
また、前記コネクターは、通常、鉄−ニッケル−コバルト合金等の金属の線材の周囲をガラス等の絶縁性材料から成る外囲体で取り囲んだ構造を有しており、コネクターの線材と第２配線導体とはコネクターの線材が熱により膨張した際、第２配線導体より外れてしまうのを防止するため約２ｍｍ（２０００μｍ）以上の長さに接続し、接続面積を大としていた。
【特許文献１】
特開２００２−１６４４６６号公報
【０００７】
【発明が解決しようとする課題】
しかしながら、この従来の半導体素子収納用パッケージおよび半導体装置においては、第２配線導体にコネクターの線材を２ｍｍ以上の長さにわたって接続しており、両者の接続部におけるインピーダンスは第２配線導体とコネクターの線材との合計となって他よりも低い低インピーダンスになるとともにその低インピーダンスの領域が２ｍｍ以上のものとなっている。そのため、この第２配線導体とコネクターの線材との間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた場合、高周波の電気信号は前記インピーダンスが低い領域（第２配線導体とコネクターの線材とが２ｍｍ以上にわたって接続されている領域）で反射等を起こし、伝送特性が大きく劣化するという欠点を有していた。
【０００８】
本発明は上記欠点に鑑み案出されたもので、その目的は、第２配線導体とコネクターの線材との接続部での高周波電気信号の反射等を有効に防止し、伝送特性の優れた半導体素子収納用パッケージおよび半導体装置を提供することにある。
【０００９】
【課題を解決するための手段】
本発明の半導体素子収納用パッケージは、４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子が搭載される搭載部を有する基体と、該基体の前記搭載部より下面にかけて導出されている複数個のグランド配線導体および第１配線導体と、前記基体の下面に形成され、前記グランド配線導体および第１配線導体に電気的に接続している複数個のグランド用パッドおよび入出力用パッドと、前記基体の搭載部より上面もしくは側面にかけて導出されている第２配線導体と、導電性の線材と絶縁性の外囲体とから成り、線材が前記第２配線導体に電気的に接続されているコネクターとで形成され、前記コネクターの線材と第２配線導体との接続長さが８００μｍ以下であるとともに前記コネクターの線材の一部が第２配線導体の表面に形成した凹部内に挿入されて接続されていることを特徴とするものである。
【００１０】
また本発明の半導体装置は、上記構成の半導体素子収納用パッケージと、４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子とから成り、前記パッケージの搭載部に半導体素子を搭載固定するとともに該半導体素子の各電極を第１配線導体および第２配線導体に電気的に接続したことを特徴とするものである。
【００１１】
本発明の半導体素子収納用パッケージおよび半導体装置によれば、第２配線導体とコネクターの線材との接続長さを８００μｍ以下と短くしたことから、第２配線導体とコネクターの線材との接続部における低インピーダンス領域の長さが極めて短いものとなり、その結果、第２配線導体とコネクターの線材に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させたとしても低インピーダンス領域が短いことから大きな反射を起こすことはなく、伝送特性を優れたものとなすことができる。
【００１２】
また本発明の半導体素子収納用パッケージおよび半導体装置によれば、コネクターの線材と第２配線導体との接続が、第２配線導体の表面に凹部を形成しておき、この凹部内にコネクターの線材の一部を挿入することによって行なわれ、凹部の領域においてコネクターの線材と第２配線導体との接続の面積が増大するとともに接続強度が強く補強される。そのためコネクターの線材が熱により膨張し第２配線導体より外れようとしても外れることはなく、第２配線導体とコネクターの線材との電気的接続の信頼性を極めて優れたものとなすことができる。
【００１３】
【発明の実施の形態】
次に、本発明を添付図面に基づき詳細に説明する。
図１は本発明の半導体素子収納用パッケージの一実施例を示し、１は基体、２ａは第１配線導体、２ｂはグランド配線導体、３ａは入出力用パッド、３ｂはグランド用パッド、４は第２配線導体、５はコネクターである。これら基体１、第１配線導体２ａ、グランド配線導体２ｂ、入出力用パッド３ａ、グランド用パッド３ｂ、第２配線導体４およびコネクター５により半導体素子６を収納するための半導体素子収納用パッケージ７が基本的に構成される。
【００１４】
前記基体１は酸化アルミニウム質焼結体、ムライト質焼結体、ガラスセラミックス、窒化アルミニウム質焼結体等の電気絶縁材料から成り、例えば、酸化アルミニウム質焼結体から成る場合、酸化アルミニウム、酸化ケイ素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機溶剤、溶媒、可塑剤、分散剤を添加混合して泥漿物を作り、この泥漿物を従来周知のドクターブレード法やカレンダーロール法等のシート形成法を採用しシート状に形成してセラミックグリーンシート（セラミック生シート）を得、しかる後、それらセラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを必要に応じて複数枚積層し、約１６００℃の高温で焼成することによって製作される。
【００１５】
また前記基体１は、半導体素子の搭載部１ａから下面にかけて複数個の第１配線導体２ａおよびグランド配線導体２ｂが形成されており、該各配線導体２ａ、２ｂは半導体素子の電気信号入出力用、接地用の各電極を、入出力用パッド３ａやグランド用パッド３ｂに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電気信号入出力用、接地用の各電極が導電性接続材を介して電気的に接続される。
【００１６】
前記第１配線導体２ａおよびグランド配線導体２ｂ、入出力用パッド３ａおよびグランド用パッド３ｂは、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤等を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面にスクリーン印刷等により所定パターンに印刷しておくことによって形成される。
【００１７】
この第１配線導体２ａおよびグランド配線導体２ｂの基体１下面側の一端は、それぞれ対応する入出力用パッド３ａおよびグランド用パッド３ｂと電気的に接続しており、これらの入出力用パッド３ａ、グランド用パッド３ｂを外部電気回路の所定の信号用や接地用等の回路導体に接続することにより、半導体素子６の電気信号入出力用、接地用の各電極が外部電気回路と電気的に接続される。
【００１８】
また前記基体１は、半導体素子の搭載部１ａから上面や側面等にかけて第２配線導体４が形成されており、該第２配線導体４は半導体素子６の電極をコネクター５の線材５ａに接続するための導電路として作用し、搭載部１ａ側の一端には半導体素子６の電極が導電性接続材８を介して電気的に接続される。
【００１９】
前記第２配線導体４は、上述の第１配線導体２ａ等と同様に、銅、銀、金、パラジウム、タングステン、モリブデン、マンガン等の金属材料から成り、例えば銅から成る場合であれば、銅粉末に有機溶剤等を添加して成る金属ペーストを基体１となるセラミックグリーンシートの表面にスクリーン印刷等により所定パターンに印刷しておくことによって形成される。
【００２０】
この第２配線導体４の基体１外表面側の一端はコネクター５の線材５ａと電気的に接続しており、このコネクター５を同軸ケーブル等を介して通信装置等の外部機器に接続することにより半導体素子６と外部機器との間で高周波信号の送受信が行われる。
【００２１】
前記コネクター５は、半導体素子収納用パッケージ７の第２配線導体４を同軸ケーブル等を介して外部機器に接続するための接続体として作用し、例えば、鉄−ニッケル−コバルト合金等の金属の線材５ａの周囲を、ホウ珪酸系ガラス等の絶縁性の外囲体５ｂで取り囲んだ構造である。
【００２２】
前記線材５ａと外囲体５ｂとから成るコネクター５は、例えば、鉄−ニッケル−コバルト合金から成る線材５ａを、鉄−ニッケル−コバルト合金等の金属から成る円筒状の容器の中央にセットし、容器内にホウ珪酸ガラス等のガラス粉末を充填した後、ガラス粉末を加熱溶融させて線材５ａの周囲に被着させることによって製作される。
【００２３】
かくして上述の半導体素子収納用パッケージによれば、基体１の搭載部１ａに半導体素子６を搭載するとともにガラス、樹脂、ロウ材等の接着材を介して固定し、しかる後、半導体素子６の各電極を第１配線導体２ａおよびグランド配線導体２ｂに、例えば、ボンディングワイヤ８を介して接続し、最後に蓋体１０を基体１の上面に封止材を介して接合させ、半導体素子６を気密に封入することによって半導体装置１１となる。
【００２４】
この半導体装置１１は基体１下面の入出力用パッド３ａおよびグランド用パッド３ｂが外部電気回路基板の所定の信号用や接地用等の回路導体に半田バンプ等の外部端子を介して接続され、これによって半導体素子６の信号用、接地用の各電極は外部電気回路と電気的に接続される。
【００２５】
また、この半導体装置１１に取着されているコネクター５の線材５ａに同軸ケーブル等の外部接続用の導線を接続することにより、半導体素子６の電極が通信装置等の外部機器に接続される。
【００２６】
そしてかかる半導体装置１１は、外部電気回路から供給される複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号を第１配線導体２ａを介して半導体素子６に入力させ、半導体素子６でこれら入力された電気信号を合成して一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号とするとともにこれを第２配線導体４を介してコネクター５に出力し、該コネクター５の線材５ａを介して外部の通信装置等の外部機器に伝送する、或いは、外部の通信装置等の外部機器から伝送された一つの周波数帯域が高い（４０〜８０ＧＨｚ）電気信号をコネクター５の線材５ａ及び第２配線導体４を介して半導体素子６に入力し、半導体素子６で入力された周波数帯域が高い（４０〜８０ＧＨｚ）電気信号を複数の周波数帯域が低い（５〜１０ＧＨｚ）電気信号に変換するとともにこれらの個々の周波数帯域が低い電気信号を第１配線導体２ａを介して外部電気回路に供給することとなる。
【００２７】
本発明の半導体素子収納用パッケージ７およびこれを用いた半導体装置１１においては、第２配線導体４とコネクター５の線材５ａとの接続長さを８００μｍ以下とすることが重要である。
【００２８】
第２配線導体４とコネクター５の線材５ａとの接続長さを８００μｍ以下とすると第２配線導体４とコネクター５の線材５ａとの接続部における低インピーダンス領域の長さが極めて短いものとなり、その結果、第２配線導体４とコネクター５の線材５ａに４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させたとしても低インピーダンス領域が短いことから大きな反射を起こすことはなく伝送特性を極めて優れたものとなすことが可能となる。
【００２９】
なお、前記第２配線導体４とコネクター５の線材５ａとの接続長さが８００μｍを超えると第２配線導体４とコネクター５の線材５ａとの接続部における低インピーダンス領域が長いものとなり、第２配線導体４とコネクター５の線材５ａとの間に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させた際、接続部で反射等を起こし、伝送特性が大きく劣化してしまう。従って、前記第２配線導体４とコネクター５の線材５ａとの接続部の長さは８００μｍ以下に特定される。
【００３０】
また本発明の半導体素子収納用パッケージおよび半導体装置においては、図２に示すように、コネクター５の線材５ａの一部を第２配線導体４の表面に形成されている凹部４ａに挿入して接続することが重要である。
【００３１】
前記コネクター５の線材５ａの一部を第２配線導体４の表面に形成されている凹部４ａに挿入して接続すると、凹部４ａの領域においてコネクター５の線材５ａと第２配線導体４との接続の面積が増大するとともに接続強度が強く補強され、その結果、コネクター５の線材５ａと第２配線導体４との接続長さが８００μｍ以下と短いものであってもコネクター５の線材５ａが熱により膨張し第２配線導体４より外れようとしても外れることはなく、第２配線導体４とコネクター５の線材５ａとの電気的接続の信頼性を極めて優れたものとなすことができる。
【００３２】
なお、前記第２配線導体４の表面に設ける凹部４ａは、例えば、金属ペーストをスクリーン印刷で所定パターンに印刷して第２配線導体４を形成する際、コネクター５の線材５ａが接続される領域のみ２列状のパターンを重ね印刷することによって形成される。
【００３３】
また、本発明は上述の実施例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能である。
【００３４】
【発明の効果】
本発明の半導体素子収納用パッケージおよび半導体装置によれば、第２配線導体とコネクターの線材との接続長さを８００μｍ以下と短くしたことから、第２配線導体とコネクターの線材との接続部における低インピーダンス領域の長さが極めて短いものとなり、その結果、第２配線導体とコネクターの線材に４０ＧＨｚ〜８０ＧＨｚの高周波の電気信号を伝送させたとしても低インピーダンス領域が短いことから大きな反射を起こすことはなく、伝送特性を優れたものとなすことができる。
【００３５】
また本発明の半導体素子収納用パッケージおよび半導体装置によれば、コネクターの線材と第２配線導体との接続が、第２配線導体の表面に凹部を形成しておき、この凹部内にコネクターの線材の一部を挿入することによって行なわれ、凹部の領域においてコネクターの線材と第２配線導体との接続の面積が増大するとともに接続強度が強く補強される。そのためコネクターの線材が熱により膨張し第２配線導体より外れようとしても外れることはなく、第２配線導体とコネクターの線材との電気的接続の信頼性を極めて優れたものとなすことができる。
【図面の簡単な説明】
【図１】本発明の半導体素子収納用パッケージおよびこの半導体素子収納用パッケージを用いた半導体装置の一実施例を示す断面図である。
【図２】図１に示す半導体素子収納用パッケージおよび半導体装置の要部拡大図である。
【符号の説明】
１・・・・・基体
１ａ・・・・搭載部
２ａ・・・・第１配線導体
２ｂ・・・・グランド配線導体
３ａ・・・・入出力用パッド
３ｂ・・・・グランド用パッド
４・・・・・第２配線導体
４ａ・・・・凹部
５・・・・・コネクター
５ａ・・・・線材
５ｂ・・・・外囲体
６・・・・・半導体素子
７・・・・・半導体素子収納用パッケージ
８・・・・・ボンディングワイヤ
１０・・・・蓋体
１１・・・・半導体装置[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor element housing package for housing a semiconductor element for transmitting and receiving high-frequency electrical signals, and a semiconductor device using the semiconductor element housing package.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, semiconductor element housing packages for housing semiconductor elements for transmitting and receiving electric signals generally include electrically insulating materials such as aluminum oxide sintered bodies, mullite sintered bodies, glass ceramics, and aluminum nitride sintered bodies. And a plurality of electrical conductors made of a metal material such as tungsten, molybdenum, manganese, copper, silver, etc., which are attached and derived from the semiconductor element mounting portion of the base to the lower surface. A wiring conductor for signal input / output and ground; a plurality of ground pads and input / output pads formed on the lower surface of the base so as to be electrically connected to the wiring conductor; It consists of an input / output wiring conductor led out to the top or side, a conductive wire and an insulating envelope, and one end of the wire is used for input / output. Is connected to the conductor, the other end is constituted by a connector that is led to the outside.
[0003]
In such a package for accommodating a semiconductor element, a semiconductor element for transmitting and receiving an electric signal is adhered and fixed to a mounting portion thereof via a bonding material such as an Au-Sn brazing material or solder, and an electrode of the semiconductor element is connected to an input / output wiring conductor. (A first wiring conductor), a ground wiring conductor, and an input / output wiring conductor (a second wiring conductor) are connected via a conductive connection material such as a bonding wire, a connection ribbon, or solder, and then, if necessary. A semiconductor device is obtained by sealing the semiconductor element with a lid or the like.
[0004]
Further, the semiconductor device accommodated inside the semiconductor device by connecting the ground pad and the input / output pad formed on the lower surface of the base to the circuit conductor of the external electric circuit board via a solder bump or the like, so that the semiconductor element accommodated therein is connected to the external electric circuit. The semiconductor device and the external device are connected by connecting the external device such as an external communication device to the connector via a coaxial cable or the like at the same time.
[0005]
The semiconductor element used in the semiconductor device has a function of synthesizing a plurality of electric signals and converting it into one electric signal, or separating one electric signal and converting it into a plurality of electric signals. An electric signal having a plurality of low frequency bands input through the first wiring conductor is synthesized by the semiconductor element to become an electric signal having one frequency band, and the electric signal having a high frequency band is transmitted through the second wiring conductor. The high frequency band electric signal transmitted to the external device such as a communication device outside from the connector through the connector through the connector, and transmitted from the external device through the connector is a semiconductor device having a plurality of low frequency band electric signals. The electric signal converted into a signal and having a low frequency band is transmitted to an external electric circuit via the first wiring conductor.
[0006]
In addition, the connector usually has a structure in which a metal wire such as an iron-nickel-cobalt alloy is surrounded by an envelope made of an insulating material such as glass. The conductor was connected to a length of about 2 mm (2000 μm) or more to prevent the wire of the connector from coming off from the second wiring conductor when expanded by heat, and the connection area was increased.
[Patent Document 1]
JP 2002-164466 A
[Problems to be solved by the invention]
However, in this conventional package for housing a semiconductor element and a semiconductor device, the wire of the connector is connected to the second wiring conductor over a length of 2 mm or more, and the impedance at the connection portion between the two is not greater than that of the second wiring conductor. The sum of the wire and the wire has a lower impedance than the others, and the area of the low impedance is 2 mm or more. Therefore, when a high-frequency electric signal of 40 GHz to 80 GHz is transmitted between the second wiring conductor and the wire of the connector, the high-frequency electric signal is in a region where the impedance is low (when the second wiring conductor and the wire of the connector are connected to each other). Reflection occurs in a region connected over 2 mm or more), and the transmission characteristics are greatly deteriorated.
[0008]
SUMMARY OF THE INVENTION The present invention has been made in view of the above-described drawbacks, and has as its object to effectively prevent reflection of a high-frequency electric signal at a connection portion between a second wiring conductor and a wire of a connector, and to provide a semiconductor having excellent transmission characteristics. An object of the present invention is to provide an element storage package and a semiconductor device.
[0009]
[Means for Solving the Problems]
The package for storing a semiconductor element according to the present invention includes a base having a mounting portion on which a semiconductor element for transmitting and receiving an electric signal of 40 GHz to 80 GHz is mounted, and a plurality of ground wirings extending from the mounting portion of the base to a lower surface. A conductor and a first wiring conductor, a plurality of ground pads and input / output pads formed on the lower surface of the base and electrically connected to the ground wiring conductor and the first wiring conductor; and mounting the base. A second wiring conductor extending from the portion to the upper surface or side surface, and a connector comprising a conductive wire and an insulating envelope, wherein the wire is electrically connected to the second wiring conductor. The connection length between the wire of the connector and the second wiring conductor is 800 μm or less, and a part of the wire of the connector is formed on the surface of the second wiring conductor. And it is characterized in that it is connected is inserted into the recess.
[0010]
Further, a semiconductor device of the present invention comprises a semiconductor element storage package having the above configuration, and a semiconductor element for transmitting and receiving an electric signal of 40 GHz to 80 GHz. The semiconductor element is mounted and fixed on a mounting portion of the package, and Each electrode is electrically connected to a first wiring conductor and a second wiring conductor.
[0011]
According to the semiconductor element housing package and the semiconductor device of the present invention, since the connection length between the second wiring conductor and the wire of the connector is reduced to 800 μm or less, the connection portion between the second wiring conductor and the wire of the connector is reduced. The length of the low-impedance region is extremely short. As a result, even when a high-frequency electric signal of 40 GHz to 80 GHz is transmitted to the wire of the second wiring conductor and the connector, a large reflection occurs due to the short low-impedance region. However, the transmission characteristics can be improved.
[0012]
Further, according to the semiconductor element housing package and the semiconductor device of the present invention, the connection between the connector wire and the second wiring conductor is performed by forming a recess in the surface of the second wiring conductor, and the connector wire is provided in the recess. Of the connector, the area of the connection between the wire of the connector and the second wiring conductor is increased in the region of the concave portion, and the connection strength is strongly reinforced. Therefore, even if the wire of the connector expands due to heat and tends to come off from the second wiring conductor, it does not come off, and the reliability of the electrical connection between the second wiring conductor and the wire of the connector can be made extremely excellent.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 shows an embodiment of a package for housing a semiconductor element according to the present invention, wherein 1 is a base, 2a is a first wiring conductor, 2b is a ground wiring conductor, 3a is an input / output pad, 3b is a ground pad, and 4 is The second wiring conductor 5 is a connector. A semiconductor element housing package 7 for housing the semiconductor element 6 by the base 1, the first wiring conductor 2a, the ground wiring conductor 2b, the input / output pad 3a, the ground pad 3b, the second wiring conductor 4 and the connector 5 is provided. Basically configured.
[0014]
The base 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a glass ceramic, an aluminum nitride sintered body. A suitable organic solvent, solvent, plasticizer, and dispersant are added to and mixed with raw material powders such as silicon, magnesium oxide, and calcium oxide to form a slurry, and the slurry is formed by a conventionally known doctor blade method, calender roll method, or the like. A ceramic green sheet (ceramic green sheet) is obtained by forming a sheet by adopting a sheet forming method. Thereafter, the ceramic green sheet is subjected to an appropriate punching process, and a plurality of the green sheets are laminated as necessary. It is manufactured by firing at a high temperature of 1600 ° C.
[0015]
The base 1 has a plurality of first wiring conductors 2a and ground wiring conductors 2b formed from the mounting portion 1a of the semiconductor element to the lower surface, and each of the wiring conductors 2a and 2b is used for inputting / outputting an electric signal of the semiconductor element. , Acts as a conductive path for connecting the ground electrode to the input / output pad 3a or the ground pad 3b, and has one end on the side of the mounting portion 1a for input / output of electric signals of the semiconductor element 6 and ground. Each electrode is electrically connected via a conductive connection material.
[0016]
The first wiring conductor 2a, the ground wiring conductor 2b, the input / output pad 3a, and the ground pad 3b are made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, or manganese. If there is, it is formed by printing a metal paste obtained by adding an organic solvent or the like to copper powder in a predetermined pattern by screen printing or the like on the surface of the ceramic green sheet serving as the base 1.
[0017]
One ends of the first wiring conductor 2a and the ground wiring conductor 2b on the lower surface side of the base 1 are electrically connected to corresponding input / output pads 3a and ground pads 3b, respectively. By connecting the ground pad 3b to a predetermined signal conductor or a circuit conductor for grounding of the external electric circuit, the electric signal input / output and ground electrodes of the semiconductor element 6 are electrically connected to the external electric circuit. Is done.
[0018]
The base 1 has a second wiring conductor 4 formed from the mounting portion 1a of the semiconductor element to the upper surface, the side surface, and the like. The second wiring conductor 4 connects the electrode of the semiconductor element 6 to the wire 5a of the connector 5. And an electrode of the semiconductor element 6 is electrically connected to one end of the mounting portion 1a via a conductive connecting material 8.
[0019]
The second wiring conductor 4 is made of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, or manganese, like the first wiring conductor 2a described above. It is formed by printing a metal paste obtained by adding an organic solvent or the like to the powder in a predetermined pattern by screen printing or the like on the surface of the ceramic green sheet serving as the base 1.
[0020]
One end of the second wiring conductor 4 on the outer surface side of the base 1 is electrically connected to a wire 5a of a connector 5, and the connector 5 is connected to an external device such as a communication device via a coaxial cable or the like. Transmission and reception of high-frequency signals are performed between the semiconductor element 6 and an external device.
[0021]
The connector 5 functions as a connector for connecting the second wiring conductor 4 of the semiconductor element housing package 7 to an external device via a coaxial cable or the like, and is, for example, a metal wire such as an iron-nickel-cobalt alloy. 5A has a structure in which the periphery of 5a is surrounded by an insulating outer body 5b such as borosilicate glass.
[0022]
For the connector 5 composed of the wire 5a and the outer body 5b, for example, a wire 5a made of an iron-nickel-cobalt alloy is set at the center of a cylindrical container made of a metal such as an iron-nickel-cobalt alloy, After the glass powder such as borosilicate glass is filled in the container, the glass powder is heated and melted and adhered around the wire 5a.
[0023]
Thus, according to the above-described semiconductor element storage package, the semiconductor element 6 is mounted on the mounting portion 1a of the base 1 and fixed via an adhesive such as glass, resin, brazing material, and the like. The electrodes are connected to the first wiring conductor 2a and the ground wiring conductor 2b, for example, via bonding wires 8, and finally, the lid 10 is joined to the upper surface of the base 1 via a sealing material, and the semiconductor element 6 is hermetically sealed. The semiconductor device 11 is obtained by enclosing the semiconductor device 11 in the semiconductor device 11.
[0024]
In the semiconductor device 11, input / output pads 3a and ground pads 3b on the lower surface of the base 1 are connected to predetermined signal and ground circuit conductors of an external electric circuit board via external terminals such as solder bumps. Accordingly, the signal and ground electrodes of the semiconductor element 6 are electrically connected to an external electric circuit.
[0025]
In addition, by connecting a conductor for external connection such as a coaxial cable to the wire 5a of the connector 5 attached to the semiconductor device 11, the electrode of the semiconductor element 6 is connected to an external device such as a communication device.
[0026]
The semiconductor device 11 causes a plurality of low-frequency band (5 to 10 GHz) electric signals supplied from an external electric circuit to be input to the semiconductor element 6 via the first wiring conductor 2a, and the semiconductor element 6 inputs these electric signals. The electric signal is synthesized into an electric signal having a high frequency band (40 to 80 GHz) and is output to the connector 5 via the second wiring conductor 4, and is supplied to the outside through the wire 5 a of the connector 5. An electric signal having a high frequency band (40 to 80 GHz) transmitted to an external device such as a communication device or transmitted from an external device such as an external communication device is transmitted to the wire 5a and the second wiring conductor 4 of the connector 5. The electric signal having a high frequency band (40 to 80 GHz) and a plurality of low frequency bands (5 to 10 GHz) is input to the semiconductor element 6 through the semiconductor element 6. The electrical signals of these individual frequency band is low and converts the electrical signal through the first wiring conductor 2a so that the supply to an external electrical circuit.
[0027]
In the semiconductor element housing package 7 of the present invention and the semiconductor device 11 using the same, it is important that the connection length between the second wiring conductor 4 and the wire 5a of the connector 5 is 800 μm or less.
[0028]
If the connection length between the second wiring conductor 4 and the wire 5a of the connector 5 is 800 μm or less, the length of the low impedance region at the connection between the second wiring conductor 4 and the wire 5a of the connector 5 becomes extremely short. As a result, even if a high-frequency electric signal of 40 GHz to 80 GHz is transmitted to the wire member 5a of the second wiring conductor 4 and the connector 5, since the low impedance region is short, large reflection does not occur and the transmission characteristics are extremely excellent. It is possible to do.
[0029]
When the connection length between the second wiring conductor 4 and the wire 5a of the connector 5 exceeds 800 μm, the low impedance region in the connection portion between the second wiring conductor 4 and the wire 5a of the connector 5 becomes long, When a high-frequency electric signal of 40 GHz to 80 GHz is transmitted between the wiring conductor 4 and the wire 5a of the connector 5, reflection or the like occurs at a connection portion, and transmission characteristics are greatly deteriorated. Therefore, the length of the connection portion between the second wiring conductor 4 and the wire 5a of the connector 5 is specified to be 800 μm or less.
[0030]
Further, in the semiconductor element housing package and the semiconductor device of the present invention, as shown in FIG. 2, a part of the wire 5a of the connector 5 is inserted into the recess 4a formed on the surface of the second wiring conductor 4 and connected. It is important to.
[0031]
When a part of the wire 5a of the connector 5 is inserted and connected to the recess 4a formed on the surface of the second wiring conductor 4, the connection between the wire 5a of the connector 5 and the second wiring conductor 4 in the area of the recess 4a. As a result, even if the connection length between the wire 5a of the connector 5 and the second wiring conductor 4 is as short as 800 μm or less, the wire 5a of the connector 5 is heated by heat. Even if it expands and comes off from the second wiring conductor 4, it does not come off, and the reliability of the electrical connection between the second wiring conductor 4 and the wire 5a of the connector 5 can be made extremely excellent.
[0032]
The concave portion 4a provided on the surface of the second wiring conductor 4 is formed, for example, in a region where the wire 5a of the connector 5 is connected when the metal wiring is printed in a predetermined pattern by screen printing to form the second wiring conductor 4. Only two rows of patterns are formed by overlapping printing.
[0033]
Further, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.
[0034]
【The invention's effect】
According to the semiconductor element housing package and the semiconductor device of the present invention, since the connection length between the second wiring conductor and the wire of the connector is reduced to 800 μm or less, the connection portion between the second wiring conductor and the wire of the connector is reduced. The length of the low-impedance region is extremely short. As a result, even when a high-frequency electric signal of 40 GHz to 80 GHz is transmitted to the wire of the second wiring conductor and the connector, a large reflection occurs due to the short low-impedance region. However, the transmission characteristics can be improved.
[0035]
Further, according to the semiconductor element housing package and the semiconductor device of the present invention, the connection between the connector wire and the second wiring conductor is performed by forming a recess on the surface of the second wiring conductor, and the connector wire is provided in the recess. Of the connector, the connection area between the wire of the connector and the second wiring conductor is increased in the region of the recess, and the connection strength is strongly reinforced. Therefore, even if the wire of the connector expands due to heat and comes off from the second wiring conductor, it does not come off, and the reliability of the electrical connection between the second wiring conductor and the wire of the connector can be made extremely excellent.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element of the present invention and a semiconductor device using the package for housing a semiconductor element.
FIG. 2 is an enlarged view of a main part of the semiconductor element housing package and the semiconductor device shown in FIG. 1;
[Explanation of symbols]
1 Base 1a Mounting part 2a First wiring conductor 2b Ground wiring conductor 3a Input / output pad 3b Ground pad 4 ··············································································································· Semiconductor Element storage package 8 Bonding wire 10 Lid 11 Semiconductor device

Claims (2)

４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子が搭載される搭載部を有する基体と、該基体の前記搭載部より下面にかけて導出されている複数個のグランド配線導体および第１配線導体と、前記基体の下面に形成され、前記グランド配線導体および第１配線導体に電気的に接続している複数個のグランド用パッドおよび入出力用パッドと、前記基体の搭載部より上面もしくは側面にかけて導出されている第２配線導体と、導電性の線材と絶縁性の外囲体とから成り、線材が前記第２配線導体に電気的に接続されているコネクターとで形成され、前記コネクターの線材と第２配線導体との接続長さが８００μｍ以下であるとともに前記コネクターの線材の一部が第２配線導体の表面に形成した凹部内に挿入されて接続されていることを特徴とする半導体素子収納用パッケージ。A base having a mounting portion on which a semiconductor element for transmitting and receiving an electric signal of 40 GHz to 80 GHz is mounted, a plurality of ground wiring conductors and first wiring conductors extending from the mounting portion to a lower surface of the base; And a plurality of ground pads and input / output pads electrically connected to the ground wiring conductor and the first wiring conductor, and are led out from the mounting portion of the base to the upper surface or the side surface. A second wiring conductor, a conductive wire and an insulating enclosure, wherein the wire is formed of a connector electrically connected to the second wiring conductor; The connection length with the conductor is 800 μm or less, and a part of the wire of the connector is inserted and connected in a recess formed in the surface of the second wiring conductor. Package for housing semiconductor chip according to claim. 請求項１に記載の半導体素子収納用パッケージと、４０ＧＨｚ〜８０ＧＨｚの電気信号を送受信する半導体素子とから成り、前記パッケージの搭載部に半導体素子を搭載固定するとともに該半導体素子の各電極を第１配線導体および第２配線導体に電気的に接続したことを特徴とする半導体装置。2. A package for accommodating a semiconductor element according to claim 1, comprising: a semiconductor element for transmitting and receiving an electric signal of 40 GHz to 80 GHz. A semiconductor device electrically connected to a wiring conductor and a second wiring conductor.
JP2002335670A 2002-11-19 2002-11-19 Semiconductor element storage package and semiconductor device using the same Expired - Fee Related JP3808423B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170865A (en) * 2007-12-17 2009-07-30 Kyocera Corp Connection structure between signal terminal and signal line conductor, electronic component mounting package, and electronic apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009170865A (en) * 2007-12-17 2009-07-30 Kyocera Corp Connection structure between signal terminal and signal line conductor, electronic component mounting package, and electronic apparatus

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