JP2004165644A - プラズマ処理装置および方法 - Google Patents

プラズマ処理装置および方法 Download PDF

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Publication number
JP2004165644A
JP2004165644A JP2003346594A JP2003346594A JP2004165644A JP 2004165644 A JP2004165644 A JP 2004165644A JP 2003346594 A JP2003346594 A JP 2003346594A JP 2003346594 A JP2003346594 A JP 2003346594A JP 2004165644 A JP2004165644 A JP 2004165644A
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Japan
Prior art keywords
electrode
plasma
frequency
frequency power
power supply
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JP2003346594A
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Japanese (ja)
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JP2004165644A5 (https=
Inventor
Masahiro Sumiya
誠浩 角屋
Hisateru Yasui
尚輝 安井
Seiichi Watanabe
成一 渡辺
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2003346594A priority Critical patent/JP2004165644A/ja
Publication of JP2004165644A publication Critical patent/JP2004165644A/ja
Publication of JP2004165644A5 publication Critical patent/JP2004165644A5/ja
Pending legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP2003346594A 2000-09-12 2003-10-06 プラズマ処理装置および方法 Pending JP2004165644A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003346594A JP2004165644A (ja) 2000-09-12 2003-10-06 プラズマ処理装置および方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000276667 2000-09-12
JP2003346594A JP2004165644A (ja) 2000-09-12 2003-10-06 プラズマ処理装置および方法

Related Parent Applications (1)

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JP2001275893A Division JP3621900B2 (ja) 2000-09-12 2001-09-12 プラズマ処理装置および方法

Publications (2)

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JP2004165644A true JP2004165644A (ja) 2004-06-10
JP2004165644A5 JP2004165644A5 (https=) 2008-10-23

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ID=32827310

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JP2003346594A Pending JP2004165644A (ja) 2000-09-12 2003-10-06 プラズマ処理装置および方法

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JP (1) JP2004165644A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027496A (ja) * 2005-07-19 2007-02-01 Hitachi High-Technologies Corp プラズマエッチング装置および微粒子除去方法
JP2007035949A (ja) * 2005-07-27 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2009088389A (ja) * 2007-10-02 2009-04-23 Hitachi High-Technologies Corp プラズマ処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202438A (ja) * 1985-03-06 1986-09-08 Ulvac Corp グロ−放電安定化方法
JPH0936098A (ja) * 1995-07-18 1997-02-07 Tokyo Electron Ltd プラズマエッチング装置
JP2000223480A (ja) * 1998-11-27 2000-08-11 Tokyo Electron Ltd プラズマエッチング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61202438A (ja) * 1985-03-06 1986-09-08 Ulvac Corp グロ−放電安定化方法
JPH0936098A (ja) * 1995-07-18 1997-02-07 Tokyo Electron Ltd プラズマエッチング装置
JP2000223480A (ja) * 1998-11-27 2000-08-11 Tokyo Electron Ltd プラズマエッチング装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027496A (ja) * 2005-07-19 2007-02-01 Hitachi High-Technologies Corp プラズマエッチング装置および微粒子除去方法
JP2007035949A (ja) * 2005-07-27 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2009088389A (ja) * 2007-10-02 2009-04-23 Hitachi High-Technologies Corp プラズマ処理方法

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