JP2004158843A - 半導体デバイス上に材料を選択的に堆積させる電気泳動プロセス - Google Patents
半導体デバイス上に材料を選択的に堆積させる電気泳動プロセス Download PDFInfo
- Publication number
- JP2004158843A JP2004158843A JP2003354467A JP2003354467A JP2004158843A JP 2004158843 A JP2004158843 A JP 2004158843A JP 2003354467 A JP2003354467 A JP 2003354467A JP 2003354467 A JP2003354467 A JP 2003354467A JP 2004158843 A JP2004158843 A JP 2004158843A
- Authority
- JP
- Japan
- Prior art keywords
- type side
- semiconductor device
- bias
- applying
- bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title claims abstract description 26
- 238000000151 deposition Methods 0.000 title abstract description 39
- 230000008569 process Effects 0.000 title abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 46
- 239000011248 coating agent Substances 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003989 dielectric material Substances 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 53
- 239000002245 particle Substances 0.000 claims description 50
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000000873 masking effect Effects 0.000 claims description 4
- -1 phosphors Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 16
- 238000012545 processing Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000001652 electrophoretic deposition Methods 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 description 22
- 238000001962 electrophoresis Methods 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000012190 activator Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100165186 Caenorhabditis elegans bath-34 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical group [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
【解決手段】半導体デバイスはp型側部及びn型側部を有する。第1のバイアス電圧が陽極と半導体デバイスのp型側部との間に印加される。第2のバイアス電圧が半導体デバイスのp型側部とn型側部との間に印加される。p型側部及びn型側部の相対的なバイアス処理により、半導体上のコーティングが堆積されるべき場所が決定される。随意選択的なプレコーティングを使用してシリカ等の高抵抗率誘電材料を半導体デバイス上に堆積させることができる。該プレコーティングは、半導体デバイスの表面上の電界を均一にし、該プレコーティングなしでの燐光物質の堆積時には、金属接続やパッシベーション層といった局所的な構造が電界を妨げる可能性がある。
【選択図】図3
Description
34 陽極
36 第1のバイアス電圧印加手段
38 第2のバイアス電圧印加手段
50 半導体デバイス
52 p型側部
54 活性層
56 n型側部
Claims (22)
- p型側部及びn型側部を有する半導体デバイスをコーティングする方法であって、
懸濁粒子を含む浴を配設し、
該浴内に陽極を配置し、
該浴内に半導体デバイスを配置し、
前記陽極と前記p型側部との間に第1のバイアス電圧を印加して、該陽極を該p型側部に対して正電圧に保持し、
前記p型側部と前記n型側部との間に第2のバイアス電圧を印加する、
という各ステップを有する方法。 - 前記第2のバイアス電圧が、逆バイアス、0バイアス、及び順バイアスから成るグループから選択される、請求項1に記載の方法。
- 前記p型側部と前記n型側部との間に前記第2のバイアス電圧を印加する前記ステップが、逆バイアス、0バイアス、及び順バイアスの間で切り替え可能な第2のバイアス電圧を印加するステップを含む、請求項1に記載の方法。
- 前記p型側部と前記n型側部との間に前記第2のバイアス電圧を印加する前記ステップが、前記陽極と前記n型側部との間に電圧を印加するステップを含む、請求項1に記載の方法。
- 前記半導体デバイスが、発光ダイオード(LED)、エレクトロルミネセントデバイス、レーザダイオード、pnpトランジスタ、npnトランジスタ、電荷結合素子(CCD)、CMOSイメージ生成手段、アモルファスシリコンデバイス、X線イメージ生成手段、フォトトランジスタ、半導体、及び半導体デバイスアレイから成るグループから選択される、請求項1に記載の方法。
- 前記半導体デバイスが、前記浴中に配置される複数の半導体デバイスのうちの1つである、請求項1に記載の方法。
- 前記半導体デバイスをプレコーティングするステップを含む、請求項1に記載の方法。
- 前記半導体デバイスをプレコーティングする前記ステップが、高抵抗率誘電材料コーティングで前記半導体デバイスをプレコーティングするステップを含む、請求項7に記載の方法。
- 前記半導体デバイスをマスクするステップを含む、請求項1に記載の方法。
- 前記懸濁粒子が燐光物質粒子である、請求項1に記載の方法。
- 前記懸濁粒子が、光学材料、高抵抗率誘電材料、燐光物質、シリカ、二酸化チタン、及びそれらの組み合わせから成るグループから選択される、請求項1に記載の方法。
- 前記p型側部と前記n型側部との間に前記第2のバイアス電圧を印加する前記ステップが、前記p型側部と前記n型側部との間に前記第2のバイアス電圧を印加して前記半導体デバイスを発光させ、該光により前記浴をイオン化させるステップを含む、請求項1に記載の方法。
- p型側部及びn型側部を有する半導体デバイスをコーティングするシステムであって、 懸濁粒子を含む浴と、
該浴内に配置された陽極と、
該浴内に半導体を配置する手段と、
前記陽極と前記p型側部との間に第1のバイアス電圧を印加して該陽極を該p型側部に対して正電圧に保持する手段と、
前記p型側部と前記n型側部との間に第2のバイアス電圧を印加する手段と
を有するシステム。 - 前記p型側部と前記n型側部との間に前記第2のバイアス電圧を印加する前記手段が、逆バイアス、0バイアス、及び順バイアスの間で切り替え可能なものである、請求項13に記載のシステム。
- 前記懸濁粒子が燐光物質粒子である、請求項13に記載のシステム。
- 前記懸濁粒子が高抵抗誘電体粒子である、請求項13に記載のシステム。
- 前記半導体デバイスをマスクする手段を含む、請求項13に記載のシステム。
- p型側部及びn型側部を有する発光ダイオードをコーティングする方法であって、
燐光物質粒子及び硝酸マグネシウムを含む浴を配設し、
該浴内に陽極を配置し、
該浴内に発光ダイオードを配置し、
前記陽極と前記p型側部との間に第1のバイアス電圧を印加して、該陽極を該p型側部に対して正電圧に保持し、
前記p型側部と前記n型側部との間に第2のバイアス電圧を印加する、
という各ステップを有する方法。 - 前記p型側部と前記n型側部との間に前記第2のバイアス電圧を印加する前記ステップが、逆バイアス、0バイアス、及び順バイアスの間で前記第2のバイアス電圧を切り替えるステップを含む、請求項18に記載の方法。
- 前記p型側部と前記n型側部との間に前記第2のバイアス電圧を印加する前記ステップが、前記陽極と前記n型側部との間に電圧を印加するステップを含む、請求項18に記載の方法。
- 前記発光ダイオードをシリカでプレコーティングするステップを含む、請求項18に記載の方法。
- 前記半導体デバイスをマスクするステップを含む、請求項18に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/277,285 US6864110B2 (en) | 2002-10-22 | 2002-10-22 | Electrophoretic processes for the selective deposition of materials on a semiconducting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004158843A true JP2004158843A (ja) | 2004-06-03 |
JP4490073B2 JP4490073B2 (ja) | 2010-06-23 |
Family
ID=32106476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003354467A Expired - Lifetime JP4490073B2 (ja) | 2002-10-22 | 2003-10-15 | 半導体デバイス上に材料を選択的に堆積させる電気泳動プロセス |
Country Status (3)
Country | Link |
---|---|
US (1) | US6864110B2 (ja) |
JP (1) | JP4490073B2 (ja) |
DE (1) | DE10340004B4 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009506532A (ja) * | 2005-08-25 | 2009-02-12 | クリー インコーポレイテッド | 半導体デバイスに材料を堆積させるシステム及びその方法並びに発光ダイオード |
JP2009283549A (ja) * | 2008-05-20 | 2009-12-03 | Mitsubishi Electric Corp | 太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
KR100973238B1 (ko) | 2008-03-26 | 2010-07-30 | 서울반도체 주식회사 | 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는led |
WO2011099384A1 (ja) | 2010-02-09 | 2011-08-18 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6533215B2 (en) * | 2000-06-12 | 2003-03-18 | Thomas M. Crain | Fence spool apparatus |
US20030085012A1 (en) * | 2001-09-07 | 2003-05-08 | Jones J Philip E | Hyperplaty clays and their use in paper coating and filling, methods for making same, and paper products having improved brightness |
US6808559B2 (en) * | 2002-02-26 | 2004-10-26 | Imerys Pigments, Inc. | Kaolin clay pigments suited to rotogravure printing applications and method for preparing the same |
AU2003214460A1 (en) * | 2002-03-28 | 2003-10-13 | Imerys Minerals Limited | Flame retardant polymer compositions comprising a particulate clay mineral |
CN100588296C (zh) | 2002-05-13 | 2010-02-03 | 约翰逊父子公司 | 用于产生光和香味的组合表示的装置和方法 |
KR20050103492A (ko) | 2003-02-07 | 2005-10-31 | 에스.씨. 존슨 앤드 선, 인코포레이티드 | 발광 다이오드 나이트라이트를 구비한 디퓨저 |
US20070045641A1 (en) * | 2005-08-23 | 2007-03-01 | Yin Chua Janet B | Light source with UV LED and UV reflector |
US20070128745A1 (en) * | 2005-12-01 | 2007-06-07 | Brukilacchio Thomas J | Phosphor deposition method and apparatus for making light emitting diodes |
US20070215473A1 (en) * | 2006-03-17 | 2007-09-20 | Teco Electric & Machinery Co., Ltd. | Method for sequentially electrophoresis depositing carbon nanotube of field emission display |
US7504272B2 (en) * | 2006-11-06 | 2009-03-17 | Stanley Electric Co., Ltd. | Method for producing color-converting light-emitting device using electrophoresis |
US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
EP1975831A1 (en) * | 2007-03-27 | 2008-10-01 | Thomson Licensing, Inc. | Device and method for digital processing management of content so as to enable an imposed work flow |
DE102007042642A1 (de) * | 2007-09-07 | 2009-03-12 | Osram Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
US8273589B2 (en) | 2010-03-19 | 2012-09-25 | Micron Technology, Inc. | Light emitting diodes and methods for manufacturing light emitting diodes |
DE102011056813A1 (de) * | 2011-12-21 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Leuchtdiode |
KR101926357B1 (ko) | 2012-02-17 | 2018-12-07 | 삼성전자주식회사 | 반도체 발광장치 제조방법 |
CN103367611B (zh) * | 2012-03-28 | 2017-08-08 | 日亚化学工业株式会社 | 波长变换用无机成型体及其制造方法以及发光装置 |
DE102012106859B4 (de) * | 2012-07-27 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines mehrfarbigen LED-Displays |
US9164001B2 (en) * | 2013-06-28 | 2015-10-20 | Bridgelux, Inc. | Using an LED die to measure temperature inside silicone that encapsulates an LED array |
US9206958B2 (en) | 2013-09-16 | 2015-12-08 | Osram Sylvania Inc. | Thin film wavelength converters and methods for making the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002001649A1 (en) * | 2000-06-29 | 2002-01-03 | Koninklijke Philips Electronics N.V. | Optoelectric element |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027179B2 (ja) * | 1975-11-05 | 1985-06-27 | 日本電気株式会社 | 多孔質シリコンの形成方法 |
DE2930460C2 (de) * | 1979-07-27 | 1986-07-17 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum Herstellen hochspannungsfester Mesadioden |
JPS58141563A (ja) * | 1982-02-17 | 1983-08-22 | Toshiba Corp | 半導体装置 |
JPS6010120B2 (ja) * | 1982-09-14 | 1985-03-15 | ソニー株式会社 | 粉体の非水溶液系電着法 |
FR2726581B1 (fr) * | 1994-11-08 | 1996-12-06 | Commissariat Energie Atomique | Suspension pour le depot de materiaux luminescents par electrophorese, notamment pour la realisation d'ecrans plats |
-
2002
- 2002-10-22 US US10/277,285 patent/US6864110B2/en not_active Expired - Lifetime
-
2003
- 2003-08-29 DE DE10340004A patent/DE10340004B4/de not_active Expired - Fee Related
- 2003-10-15 JP JP2003354467A patent/JP4490073B2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002001649A1 (en) * | 2000-06-29 | 2002-01-03 | Koninklijke Philips Electronics N.V. | Optoelectric element |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009506532A (ja) * | 2005-08-25 | 2009-02-12 | クリー インコーポレイテッド | 半導体デバイスに材料を堆積させるシステム及びその方法並びに発光ダイオード |
KR100973238B1 (ko) | 2008-03-26 | 2010-07-30 | 서울반도체 주식회사 | 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는led |
JP2009283549A (ja) * | 2008-05-20 | 2009-12-03 | Mitsubishi Electric Corp | 太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
JP4703687B2 (ja) * | 2008-05-20 | 2011-06-15 | 三菱電機株式会社 | 太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
WO2011099384A1 (ja) | 2010-02-09 | 2011-08-18 | 日亜化学工業株式会社 | 発光装置および発光装置の製造方法 |
US9196805B2 (en) | 2010-02-09 | 2015-11-24 | Nichia Corporation | Light emitting device and method for manufacturing light emitting device |
US9887329B2 (en) | 2010-02-09 | 2018-02-06 | Nichia Corporation | Light emitting device and method for manufacturing light emitting device |
US10230034B2 (en) | 2010-02-09 | 2019-03-12 | Nichia Corporation | Light emitting device and method for manufacturing light emitting device |
EP3547380A1 (en) | 2010-02-09 | 2019-10-02 | Nichia Corporation | Light emitting device |
Also Published As
Publication number | Publication date |
---|---|
DE10340004B4 (de) | 2009-07-16 |
US6864110B2 (en) | 2005-03-08 |
DE10340004A1 (de) | 2004-05-13 |
JP4490073B2 (ja) | 2010-06-23 |
US20040121502A1 (en) | 2004-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4490073B2 (ja) | 半導体デバイス上に材料を選択的に堆積させる電気泳動プロセス | |
US7847303B2 (en) | Warm white light emitting apparatus and back light module comprising the same | |
US11573006B2 (en) | Light emitting device and a light source module including the same | |
US6924233B1 (en) | Phosphor deposition methods | |
CN105098041B (zh) | 发光器件和包括发光器件的发光器件封装 | |
KR101241973B1 (ko) | 발광 장치 및 이의 제조 방법 | |
JP4928046B2 (ja) | 光電素子 | |
JP2007053368A (ja) | 配光均一性の改善された燐光変換ledデバイス | |
US20110037083A1 (en) | Led package with contrasting face | |
WO2005043631A2 (en) | Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device | |
US9496457B2 (en) | Light emitting device and light emitting device package | |
TW201145598A (en) | A method to produce homogeneous light output by shaping the light conversion material in multichip module | |
JP2004153261A (ja) | 発光基層のスクリーン印刷方法 | |
KR20140089166A (ko) | 발광 모듈 | |
US20100308362A1 (en) | Optoelectronic Component | |
CN102522400A (zh) | 一种防静电损伤的垂直发光器件及其制造方法 | |
WO2008023954A1 (en) | Light emitting device | |
CN103972221A (zh) | Led光源封装结构及led光源封装方法 | |
KR20050008259A (ko) | 고휘도 고절대정격 발광 다이오드 칩 | |
JP2019091648A (ja) | 調色led照明装置および照明器具 | |
JP5242661B2 (ja) | 発光装置の製造方法 | |
CN1797798A (zh) | 发光二极管 | |
KR102201186B1 (ko) | 발광 장치 | |
CN105679922B (zh) | 用于增大的光提取和非黄色的断开状态颜色的在封装剂中具有颗粒的led | |
KR20200087576A (ko) | 반도체 소자 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061013 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20080814 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20080814 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091201 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100301 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100330 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100401 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130409 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130409 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140409 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |