JP2004146420A5 - - Google Patents

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Publication number
JP2004146420A5
JP2004146420A5 JP2002306631A JP2002306631A JP2004146420A5 JP 2004146420 A5 JP2004146420 A5 JP 2004146420A5 JP 2002306631 A JP2002306631 A JP 2002306631A JP 2002306631 A JP2002306631 A JP 2002306631A JP 2004146420 A5 JP2004146420 A5 JP 2004146420A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002306631A
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JP2004146420A (ja
JP4282305B2 (ja
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Priority to JP2002306631A priority Critical patent/JP4282305B2/ja
Priority claimed from JP2002306631A external-priority patent/JP4282305B2/ja
Publication of JP2004146420A publication Critical patent/JP2004146420A/ja
Publication of JP2004146420A5 publication Critical patent/JP2004146420A5/ja
Application granted granted Critical
Publication of JP4282305B2 publication Critical patent/JP4282305B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002306631A 2002-10-22 2002-10-22 窒化物半導体レーザ素子、その製造方法及びそれを備えた半導体光学装置 Expired - Fee Related JP4282305B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002306631A JP4282305B2 (ja) 2002-10-22 2002-10-22 窒化物半導体レーザ素子、その製造方法及びそれを備えた半導体光学装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002306631A JP4282305B2 (ja) 2002-10-22 2002-10-22 窒化物半導体レーザ素子、その製造方法及びそれを備えた半導体光学装置

Publications (3)

Publication Number Publication Date
JP2004146420A JP2004146420A (ja) 2004-05-20
JP2004146420A5 true JP2004146420A5 (ja) 2005-12-08
JP4282305B2 JP4282305B2 (ja) 2009-06-17

Family

ID=32453332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002306631A Expired - Fee Related JP4282305B2 (ja) 2002-10-22 2002-10-22 窒化物半導体レーザ素子、その製造方法及びそれを備えた半導体光学装置

Country Status (1)

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JP (1) JP4282305B2 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4322187B2 (ja) 2004-08-19 2009-08-26 シャープ株式会社 窒化物半導体発光素子
JP3816942B2 (ja) 2004-10-27 2006-08-30 三菱電機株式会社 半導体素子の製造方法
JP2006186025A (ja) * 2004-12-27 2006-07-13 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2007281387A (ja) * 2006-04-12 2007-10-25 Mitsubishi Electric Corp 半導体発光素子及びその製造方法
JP4899740B2 (ja) * 2006-09-19 2012-03-21 パナソニック株式会社 半導体発光素子、半導体発光装置および製造方法
EP3525301B1 (en) * 2007-12-28 2021-11-03 Avago Technologies International Sales Pte. Limited Device having delta doped active region
JP7296845B2 (ja) 2019-08-19 2023-06-23 日本ルメンタム株式会社 変調ドープ半導体レーザ及びその製造方法

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