JP2004128516A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for processing substrates wherein a substrate can be heat-treated with efficiency in a short time. <P>SOLUTION: In heat treatment equipment 341 in a low-oxygen cure/cooling station (DCC), a ring shutter 346 is provided with a plurality of vent holes 346a arranged in the direction of the thickness of a wafer W. Thus, heated inert gas is supplied into a heat treatment chamber 341 through the vent holes 346a. Therefore, both sides of a wafer W can be heated while the interior of the heat treatment chamber 341 is replaced with the inert gas. <P>COPYRIGHT: (C)2004,JPO

Description

{Circle over (1)} The present invention relates to a substrate processing apparatus for heating or cooling a substrate such as a semiconductor wafer.

In the manufacturing process of a semiconductor device, an interlayer insulating film is formed by, for example, an SOD (Spin on Dielectric) system. In this SOD system, for example, a coating film is spin-coated on a wafer by a sol-gel method, and a chemical treatment or a heat treatment is performed to form an interlayer insulating film.

For example, when an interlayer insulating film is formed by a sol-gel method, first, a colloid of an insulating film material, for example, TEOS (tetraethoxysilane) is dispersed in an organic solvent on a semiconductor wafer (hereinafter, referred to as “wafer”). Supply the solution. Next, the wafer supplied with the solution is subjected to a gelling process, and then the solvent is replaced. Then, the wafer in which the solvent has been replaced is subjected to a heat treatment.

様 々 In these series of steps, various heating processes and cooling processes are performed. Generally, in a heat treatment step, a wafer is carried into a heat treatment chamber, and a low oxygen atmosphere is set in the treatment chamber while the wafer is supported by a supporting member. When a low oxygen atmosphere is reached, the wafer is placed on a hot plate and heat treatment is performed. When a wafer is heated at a high temperature, the treatment is performed in a low oxygen atmosphere from the viewpoint of preventing oxidation of a coating film made of an insulating film material. Generally, such a low oxygen atmosphere is filled with an inert gas in a processing chamber. This is performed by replacing with a certain N2 gas. In the cooling process, the substrate is placed on a cooling plate in the processing chamber, and the processing chamber is placed in a low-oxygen atmosphere so that an inert gas is blown from a ventilation port arranged above the processing chamber toward the wafer surface. As a cooling process.

As the technique described above, for example, a technique disclosed in Patent Document 1 is known.
JP-A-5-166818 (paragraph [0006], FIG. 1 and the like).

However, as described above, since the heat treatment is performed by placing the wafer on the hot plate after setting the processing chamber in a low oxygen atmosphere, it takes a lot of time to form a desired low oxygen atmosphere, However, there is a problem that the time required for the heat treatment in the step becomes substantially longer, which affects the entire processing time for forming the insulating film formed on the wafer. In addition, since the heating is performed by the hot plate, the entire surface of the wafer cannot be uniformly heat-treated, resulting in a problem of uneven heating.

In addition, in the cooling process, there is a problem that the inert gas supplied toward the wafer surface becomes non-uniform in the surface, causing uneven cooling in the wafer surface.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can perform a heat treatment step in a short time without uneven heating.

Another object of the present invention is to provide a substrate processing apparatus free from uneven cooling.

In order to solve such a problem, a substrate processing apparatus of the present invention includes a hot plate on which a substrate is mounted, a hot plate that penetrates the hot plate, protrudes from the surface of the hot plate in an up state, and supports the substrate in a down state. A vertically movable support member that is embedded in the plate and mounts the substrate on the hot plate, and is disposed so as to surround an outer periphery of the substrate, and is ventilated along a thickness direction of the substrate mounted on the hot plate. A processing chamber for forming a processing space between the heating plate and the heating member in a state where the shutter member is raised or lowered, and And inert gas supply means for supplying the heated inert gas.

In the present invention, since the shutter member is provided with a plurality of ventilation holes along the thickness direction of the substrate, the heated inert gas supplied through the ventilation holes is provided under the state where the substrate is supported by the support member. Gas is blown to both sides of the substrate. Therefore, both surfaces of the substrate can be heated at the same time, and the substrate is uniformly heated within the surface, so that uneven heating does not occur. Furthermore, since the substrate can be heated by the inert gas even before the substrate is placed on the hot plate after being supported by the supporting member, the hot plate is used after the substrate is made into a low oxygen atmosphere as in the conventional case. The time required for the heat treatment can be reduced as compared with the case of performing the heat treatment. Further, since an inert gas is supplied to both surfaces of the substrate in a direction substantially horizontal to the substrate, the inert gas also has a role of blocking oxygen remaining in the processing chamber and the substrate, Oxidation of the coating film formed thereon is not promoted even in a heated state.

In one embodiment of the present invention, the substrate supported by the support member is formed at a position transferred from the outside of the apparatus and the shutter member is raised or lowered to form a processing space between the substrate and the hot plate. In this state, it is characterized by being located substantially at the center of the upper and lower vents. With such a configuration, an inert gas blown from the ventilation holes can be supplied to both surfaces of the substrate, and uneven heating in the substrate surface does not occur.

In one embodiment of the present invention, the support member that has received the substrate from the outside of the apparatus is configured such that the shutter member is raised or lowered to form a processing space between the substrate and a hot plate, and the ventilation port is provided. The substrate is lowered while the inert gas heated from above is supplied, and the substrate is placed on the hot plate. With such a configuration, the inert gas supply step and the heat treatment step can be performed simultaneously during the movement of the substrate from when the substrate is supported by the support member to when the substrate is placed on the hot plate. Therefore, the time required for the heat treatment can be reduced as compared with the conventional case where the heat treatment is performed using a hot plate after a low oxygen atmosphere.

One embodiment of the present invention is characterized in that the inert gas supply unit replaces the inside of the processing chamber with the inert gas by supplying the inert gas while gradually increasing the supply amount. According to such a configuration, by gradually increasing the supply amount of the inert gas, it is possible to efficiently raise the temperature while preventing the oxidation of the coating film formed on the substrate, and reduce the heat treatment time. It can be shortened as compared with the related art. That is, the coating film formed on the substrate tends to be oxidized as the temperature rises, but in the structure of the present invention, the oxygen concentration in the processing chamber may be reduced as the temperature becomes higher. Since it is possible, efficient heat treatment can be realized while preventing oxidation of the coating film.

The substrate processing apparatus of the present invention supplies a cooling plate on which a substrate is placed, a processing chamber in which a processing space for processing the substrate is formed between the cooling plate, and a cooled inert gas. Inert gas supply means, which is disposed above substantially the center of the substrate placed on the cooling plate, and inclines the inert gas supplied from the inert gas supply means toward the outer periphery of the substrate. And an inert gas ejection nozzle having an ejection port that ejects while discharging.

In the present invention, the inert gas can be supplied evenly to the entire surface of the substrate by having the inert gas ejecting nozzle having the ejection port ejecting while being inclined toward the outer periphery of the substrate. No cooling unevenness occurs.

The substrate processing method of the present invention includes: (a) a step of carrying a substrate above a hot plate; and (b) supplying the heated inert gas to both surfaces of the substrate from the outer peripheral side of the substrate. And (c) placing the substrate on the hot plate and heating the substrate.

According to the present invention, since the heated inert gas is supplied to both surfaces of the substrate, the entire surface of the substrate can be uniformly heated.

の One embodiment of the present invention is characterized in that, in the step (b), the heated inert gas is supplied while its supply amount is gradually increased. According to such a configuration, the temperature can be efficiently increased while preventing the oxidation of the coating film formed on the substrate, and the heat treatment time can be shortened as compared with the related art.

Another substrate processing apparatus according to the present invention includes a cooling plate on which a substrate is placed, a processing chamber in which a processing space for processing the substrate is formed between the cooling plate, and a cooled inert plate. An inert gas supply unit for supplying a gas, and an inert gas supplied from the inert gas supply unit, which is disposed substantially above the center of the substrate placed on the cooling plate, and directed to an outer periphery of the substrate. And an inert gas ejection nozzle having an ejection port that ejects while being inclined.

Another substrate processing apparatus according to the present invention is a substrate processing apparatus used for forming an interlayer insulating film on a substrate, wherein the cooling plate on which the substrate is mounted, and the substrate between the cooling plate A processing chamber in which a processing space for processing is formed, an inert gas supply unit that supplies a cooled inert gas, and is disposed substantially above the center of the substrate mounted on the cooling plate, An inert gas ejection nozzle having an ejection port for ejecting the inert gas supplied from the inert gas supply means while being inclined toward the outer periphery of the substrate.

In the present invention, the inert gas can be supplied evenly to the entire surface of the substrate by having the inert gas ejecting nozzle having the ejection port ejecting while being inclined toward the outer periphery of the substrate. No cooling unevenness occurs.

According to one embodiment of the present invention, a rectifying plate is provided near the ejection port of the inert gas ejection nozzle.

According to one embodiment of the present invention, a rectifying plate is provided near the ejection port of the inert gas ejection nozzle, and the inert gas flows radially from an opening of the rectifying plate toward the outer peripheral edge of the substrate. The air may be prevented from remaining above the central part of the airbag.

As described above, according to the present invention, since the substrate processing apparatus includes the inert gas ejection nozzle having the ejection port inclined toward the outer periphery of the substrate, the inert gas is uniformly supplied to the entire surface of the substrate. No uneven cooling occurs.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, an SOD (Spin on Dielectric) system as a substrate processing apparatus of the present invention will be described. 1 to 3 show the overall configuration of this SOD system. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

In the SOD system 1, a plurality of semiconductor wafers (hereinafter, referred to as "wafers") W as substrates are loaded into the system from the outside or unloaded from the system in units of, for example, 25 wafer cassettes CR. A cassette block 10 for loading and unloading wafers W, and various single-wafer processing stations for performing predetermined processing on the wafers W one by one in the SOD coating process are arranged in multiple stages at predetermined positions. It has a configuration in which a processing block 11 and a cabinet 12 in which an ammonia water bottle, a bubbler, a drain bottle, and the like required in the aging step are installed are integrally connected.

In the cassette block 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are arranged in a row in the X direction with the wafer entrances facing the processing block 11 at the positions of the projections 20 a on the cassette mounting table 20. The wafer carrier 21 mounted and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It has become. Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and also has access to a transfer / cooling plate (TCP) belonging to the multistage station section of the third set G3 on the processing block 11 side as described later. I can do it.

In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all processing stations are arranged in multiple stages around one or more sets around the main wafer transfer mechanism 22. ing. In this example, the multi-stage arrangement of four sets G1, G2, G3, G4 is arranged, and the multi-stage stations of the first and second sets G1, G2 are juxtaposed on the front side of the system (front side in FIG. 1). The multistage station of the set G3 is arranged adjacent to the cassette block 10, and the multistage station of the fourth set G4 is arranged adjacent to the cabinet 12.

As shown in FIG. 2, in the first set G1, a wafer W is placed on a spin chuck in a cup CP to supply an insulating film material, and the wafer is rotated to apply a uniform insulating film on the wafer. A coating process station (SCT), a wafer W is placed on a spin chuck in a cup CP to supply an exchange chemical such as HMDS and heptane, and a solvent in an insulating film applied on the wafer is removed by another solvent before a drying process. A solvent exchange processing station (DSE) for performing a process of replacing with a solvent is stacked in two stages from the bottom.

で は In the second set G2, the SOD coating processing station (SCT) is arranged in the upper stage. In addition, if necessary, an SOD coating processing station (SCT), a solvent exchange processing station (DSE), and the like can be arranged below the second set G2.

As shown in FIG. 3, in the third set G3, two low-oxygen high-temperature heat treatment stations (OHP), two low-temperature heat treatment stations (LHP), two cooling treatment stations (CPL), Cooling plates (TCP) and cooling processing stations (CPL) are arranged in multiple stages in order from the top. Here, the low-oxygen high-temperature heating processing station (OHP) has a hot plate on which the wafer W is placed in a process chamber that can be sealed, and discharges N2 uniformly from a hole on the outer periphery of the hot plate while upper portion of the processing chamber. Air is exhausted from the center, and the wafer W is subjected to high-temperature heat treatment in a low oxygen atmosphere. The low-temperature heat processing station (LHP) has a hot plate on which the wafer W is placed, and heat-processes the wafer W at a low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. The transfer / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W in a lower stage and a transfer table in an upper stage, and transfers the wafer W between the cassette block 10 and the processing block 11.

で は In the fourth group G4, a low-temperature heating processing station (LHP), two low-oxygen curing / cooling processing stations (DCC), and an aging processing station (DAC) are arranged in multiple stages in order from the top. Here, the low-oxygen curing / cooling processing station (DCC) has a hot plate and a cooling plate adjacent to each other in a process chamber that can be sealed, and performs high-temperature heat treatment and heating in an N 2 -substituted low-oxygen atmosphere. The processed wafer W is cooled. The aging processing station (DAC) introduces NH3 + H2O into a process chamber that can be sealed, performs aging processing on the wafer W, and wet-gels the insulating film material film on the wafer W.

FIG. 4 is a plan view of the above-described low oxygen curing / cooling treatment station (DCC), and FIG. 5 is a sectional view thereof.

As shown in FIGS. 4 and 5, the low-oxygen curing / cooling treatment station (DCC) has a heat treatment chamber 341 and a cooling treatment chamber 342 provided adjacent thereto. The chamber 341 has a hot plate 343 whose set temperature can be set to 200 to 470 ° C. The low-oxygen curing / cooling processing station (DCC) further includes a first gate shutter 344 that opens and closes when transferring the wafer W to and from the main wafer transfer mechanism 22, a heating processing chamber 341 and a cooling processing chamber 342. And a ring shutter 346 which is a shutter member that is raised and lowered together with the second gate shutter 345 while surrounding the outer peripheral portion of the wafer W around the hot plate 343. Have. Further, lift pins 347 as three support members for penetrating the hot plate 343, placing the wafer W thereon, and elevating the same are provided to be able to move up and down. The lift pins protrude from the surface of the hot plate 343 in the raised state to support the wafer W substantially horizontally, and in the lowered state, are buried in the hot plate 343 and place the wafer on the hot plate 343.

Below the heat treatment chamber 341, an elevating mechanism 348 for elevating the three lift pins 347, an elevating mechanism 349 for elevating the ring shutter 346 together with the second gate shutter 345, and a first gate shutter A lifting mechanism 350 for lifting and lowering the 344 to open and close it is provided.

The heating processing chamber 341 and the cooling processing chamber 342 are communicated through a communication port 352, and a cooling plate 353 for mounting and cooling the wafer W is horizontally moved by a moving mechanism 355 along a guide plate 354. It is configured to be movable in the direction. Thereby, the cooling plate 352 can enter the heating processing chamber 341 through the communication port 352, and receives the wafer W heated by the heating plate 343 in the heating processing chamber 41 from the lift pins 347 and cools it. After the wafer W is carried into the processing chamber 342 and the wafer W is cooled, the wafer W is returned to the lift pins 347.

The structure of each of the heating processing chamber 341 and the cooling processing chamber 342 in the low oxygen curing / cooling processing station (DCC) and the low oxygen curing / cooling processing station will be described below with reference to FIGS. 4, 5, and 7 to 10. The operation of the device in the (DCC) will be described in detail. 7 to 9 are flowcharts showing the operation of the apparatus in the low-oxygen curing / cooling processing station (DCC), and FIG. 10 is a diagram showing the change over time of the supply amount of the inert gas supplied into the heat treatment chamber 341 during operation. It is.

First, the first gate shutter 344 is opened, the wafer W transferred from the main wafer transfer mechanism 22 is transferred into the heat treatment chamber 341, and the lift pins 347 move the wafer W horizontally as shown in FIG. To support. At this time, the lift pin 347 is in an up state, and the ring shutter 346 is in a down state.

Next, as shown in FIG. 7B, the ring shutter 346 is raised, and the lid 348 is lowered, so that a processing space is formed by the hot plate 343, the ring shutter 346, and the lid 348. The ring shutter 346 has a hollow structure, and a plurality of ventilation holes 346a are provided on the inner surface in the thickness direction of the wafer W and further in the direction parallel to the wafer W, and a plurality of ventilation holes 346 are uniformly formed on the entire inner surface of the ring shutter 346. A vent 346a is provided. When the processing space is formed, the wafer W is located substantially at the center of the upper and lower ventilation holes 346a.

Next, as shown in FIGS. 7 (c) and 8 (a), the heat treatment chamber 341 is supplied from a supply source (not shown) through a ventilation port 346a of the ring shutter 346 to a temperature from room temperature to 470 ° C. It is configured such that heated inert gas such as N2 is supplied, and further, the inside thereof is configured to be exhausted through an exhaust pipe 351. Then, while the inside of the heat treatment chamber 341 is evacuated and simultaneously supplied with the N 2 gas to gradually bring the inside of the heat treatment chamber 341 into a low oxygen concentration atmosphere, the lift pins 347 are lowered and the wafer W is lowered. While the wafer W is lowered and mounted on the hot plate 343, the supply amount of the N 2 gas is gradually increased as shown in FIG. 10, and the N 2 gas is supplied into the heat treatment chamber 341 for 30 seconds. Until the wafer W is mounted on the hot plate 343, a plurality of ventilation holes are provided on the inner surface of the ring shutter 346 in the thickness direction of the wafer W, so that both sides of the wafer W are substantially horizontal with the wafer W. The N2 gas is supplied in an appropriate direction, and the wafer W can be uniformly heated. Further, by gradually increasing and supplying the N2 gas, it is possible to efficiently raise the temperature while preventing the coating film formed on the wafer W from being oxidized. Here, the N2 gas is supplied into the ring shutter 346 from one or a plurality of supply ports 346b provided below the ring shutter 346, passes through the internal space of the ring shutter 346, and is heated through the ventilation port 346a. It is supplied into the processing chamber 341. A plurality of valves 346c are formed in the inner space of the ring shutter 346 such that the N2 gas is uniformly supplied from the plurality of vents 346a into the heat treatment chamber 341. The valve 346c has a ring shape, and is provided so as to alternately protrude from the inner wall and the outer wall of the internal space of the ring shutter 346.

Next, as shown in FIG. 8B, the wafer W is placed on the hot plate 343. After the wafer W is placed on the hot plate 343, as shown in FIG. 10, N2 gas is supplied into the heat treatment chamber 342 at a supply rate of 20 NL / min while being kept constant for 30 seconds, and further gradually. The supply amount of the N2 gas is gradually reduced and supplied for 7 seconds, and then the N2 gas is supplied at a supply amount of 10 NL / min while keeping it constant for 30 seconds. The inside of the processing space when the wafer W is mounted on the hot plate 343 is, for example, a low oxygen atmosphere of 50 ppm or less, and the temperature of the hot plate 343 at this time is 200 to 470 ° C. Here, when placing the wafer W on the hot plate 343, the wafer W may be placed directly on the hot plate 343, or may be placed via a proximity sheet.

Next, as shown in FIG. 8C, the ring shutter 346 is lowered, the lid 348 is raised, the lift pins 347 are raised, and the wafer 347 is received from the hot plate 343. At this time, the supply amount of the N2 gas is gradually reduced as shown in FIG. 10, and the supply is finally stopped.

Next, the cooling plate 353 enters the heat treatment chamber 341 to receive the wafer W from the lift pins 347, and the lift pins 347 are lowered. Then, as shown in FIG. 9A, the cooling plate 353 holding the wafer is returned to the cooling processing chamber 342.

Next, the second gate shutter 345 is raised, and a processing space is formed in the cooling processing chamber 342. As shown in FIG. 9B, the cooling processing chamber 342 is configured such that an inert gas such as N 2 is supplied from a supply unit (not shown) through a supply pipe 356 that is a supply path. Are exhausted to the outside through an exhaust pipe 357. The supply pipe 356, which is an inert gas ejection nozzle, is disposed above substantially the center of the wafer W mounted on the cooling plate 353, and ejects the N2 gas while inclining toward the outer periphery of the wafer W while being inclined. have. Further, a current plate 358 is disposed near the outlet of the supply pipe 356 to control the direction of the flow of the N2 gas. By making the shape of the ejection port of the supply pipe 356 a tapered shape inclined toward the outer periphery of the wafer W, the flow of the N2 gas that cannot be controlled by the rectifying plate 358 can be controlled, and the entire surface of the wafer W can be evenly distributed. N2 gas can be blown. Further, by forming the ejection port 356a in a tapered shape, it is possible to prevent the formation of an air pool 359 at the central portion of the wafer W, thereby enabling uniform cooling within the substrate surface. Then, while the inside of the cooling chamber 342 is exhausted, the N 2 gas is supplied, and the wafer W is cooled in an atmosphere having a low oxygen concentration (for example, 50 ppm or less). The cooling temperature at this time is, for example, 150 to 400 ° C. At this time, since the wafer W is cooled in a low oxygen concentration atmosphere, the oxidation of the coating film is effectively prevented. After the cooling process, the supply of the N2 gas into the cooling process chamber stops, and the cooling ends.

Next, as shown in FIG. 9C, the second gate shutter 345 is lowered, the cooling plate 353 enters the heat treatment chamber 341, then the lift pins 347 are raised, and the wafer W is removed from the cooling plate 353. It is returned to the lift pin 347. The cooling plate 353 after unloading the wafer is returned to the cooling chamber, the first gate shutter 344 is opened, and the wafer W is returned to the main transport mechanism. Thus, the heating process and the cooling process are completed.

Next, the operation of the SOD system 1 configured as described above will be described. FIG. 8 shows a processing flow in the SOD system 1.

First, in the cassette block 10, the unprocessed wafer W is transferred from the wafer cassette CR to the transfer table in the transfer / cooling plate (TCP) belonging to the third set G3 on the processing block 11 side via the wafer transfer body 21.

The wafer W transferred to the transfer table in the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. Then, in the cooling processing station (CPL), the wafer W is cooled to a temperature suitable for processing in the SOD coating processing station (SCT) (step 901).

(4) The wafer W cooled in the cooling processing station (CPL) is transferred to the SOD coating processing station (SCT) via the main wafer transfer mechanism 22. Then, in the SOD coating station (SCT), the wafer W is subjected to the SOD coating process (Step 902).

The wafer W on which the SOD coating processing has been performed at the SOD coating processing station (SCT) is transferred to the aging processing station (DAC) via the main wafer transfer mechanism 22. Then, in the aging processing station (DAC), NH3 + H2O is introduced into the processing chamber, the wafer W undergoes aging processing, and the insulating film material film on the wafer W is gelled (step 903).

The wafer W that has been aged at the aging processing station (DAC) is transferred to the solvent exchange processing station (DSE) via the main wafer transfer mechanism 22. Then, at the solvent exchange processing station (DSE), a chemical solution for exchange is supplied to the wafer W, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed (step 904).

The wafer W subjected to the replacement processing at the solvent exchange processing station (DSE) is transferred to the low-temperature heating processing station (LHP) via the main wafer transfer mechanism 22. Then, the wafer W is subjected to a low-temperature heat treatment at a low-temperature heat treatment station (LHP) (step 905).

The wafer W that has been subjected to the low-temperature heat treatment at the low-temperature heat treatment station (LHP) is transferred to the low-oxygen high-temperature heat treatment station (OHP) via the main wafer transfer mechanism 22. Then, at the low-oxygen high-temperature heat treatment station (OHP), the wafer W is subjected to high-temperature heat treatment in a low-oxygen atmosphere (step 906).

The wafer W that has been subjected to the high-temperature heat treatment at the low-oxygen high-temperature heat treatment station (OHP) is transferred to the low-oxygen cure / cooling treatment station (DCC) via the main wafer transfer mechanism 22. Then, in the low oxygen curing / cooling processing station (DCC), the wafer W is subjected to a high-temperature heat treatment in a low oxygen atmosphere and cooled (step 907).

The wafer W processed in the low-oxygen cure / cooling processing station (DCC) is transferred to the cooling plate in the transfer / cooling plate (TCP) via the main wafer transfer mechanism 22. Then, the wafer W is cooled in the cooling plate of the transfer / cooling plate (TCP) (Step 908).

The wafer W cooled by the cooling plate of the transfer / cooling plate (TCP) is transferred to the wafer cassette CR via the wafer transfer body 21 in the cassette block 10.

As described above, in the SOD system 1 of the present embodiment, the aging processing station (DAC) for aging the wafer W coated with the edge film material and the solvent exchange processing station (DSE) for performing the solvent exchange processing on the aged wafer W Is integrated with the system, so that the total time required for substrate processing is very short. In addition, since a plurality of ventilation holes are provided in the thickness direction of the wafer W in the ring shutter of the heating processing chamber of the low oxygen curing / cooling processing station (DCC), an inert gas can be supplied to both surfaces of the wafer W, Heat unevenness can be prevented. Further, since the supply of the inert gas is gradually increased after the wafer W is loaded into the heat treatment chamber and before the wafer W is placed on the hot plate, the oxidation of the coating film formed on the wafer W is prevented. The substrate temperature can be efficiently increased, and the substantial heat treatment time can be reduced.

In the above embodiment, the processing space is formed in a state where the ring shutter 346 of the heat treatment apparatus of the low oxygen cure / cooling treatment station (DCC) is raised. For example, the lid 348 and the ring shutter 346 are integrated. The processing chamber may be formed with the ring shutter lowered.

Further, in the heat treatment device 341 of the low oxygen curing / cooling treatment station (DCC), the ring shutter 346 is provided with a plurality of ventilation holes in the thickness direction of the wafer W, and further the wafer W is placed on the hot plate 343. Although the supply amount of the inert gas is increased during the supply, such a configuration can also be applied to a heat treatment apparatus using a hot plate, for example, a low oxygen high temperature heat treatment station (OHP).

Further, in the above embodiment, the inert gas supply pipe of the cooling processing apparatus of the low oxygen curing / cooling processing station (DCC) has the ejection port having a shape inclined toward the outer periphery of the substrate. This configuration is not limited to the DCC cooling processing apparatus, and can be applied to a case where a gas supply pipe is located above the central part of the substrate and gas is supplied into the processing chamber via the supply pipe. With such a configuration, gas can be uniformly supplied to the entire surface of the substrate. Further, in the above-described embodiment, the ejection port has a tapered shape. However, the same effect can be obtained by, for example, a shape in which the opening is widened toward the wafer W in a stepwise manner.

Next, another embodiment of the present invention will be described.

As shown in FIG. 11, the low-oxygen curing / cooling processing station (DCC) according to this embodiment is provided adjacent to the heating processing chamber 441 and has the same configuration as that of the first embodiment. 342.

加熱 The heat treatment chamber 441 has a hot plate 443 that can be set at a set temperature of 200 to 470 ° C. Further, a lid 444 is arranged above the hot plate 443 so as to be able to move up and down so as to cover the wafer W placed on the hot plate 443. The lid 444 is driven to move up and down by an elevating mechanism 445 disposed below the heat treatment chamber 441.

(4) An opening 446 for carrying in / out the wafer W is provided between the heating processing chamber 441 and the cooling processing chamber 342. The opening 446 is provided with a shutter member 447 that is integrated with the lid 444 and moves up and down together with the lid 444. Here, as shown in FIG. 12, a small gap 448 of, for example, about 0.5 mm is provided between the opening 446 and the shutter member 447 in a state where the opening 446 is closed by the shutter member 447. I have. By providing such a gap 448, adjustment for closing is unnecessary, and generation of particles is also eliminated.

As shown in FIG. 13, a plurality of, for example, three-stage vents 451 are provided inside the outer periphery of the lid 444 along the thickness direction (vertical direction) of the wafer W placed on the hot plate 443. Have been. These ventilation holes 451 have a hole diameter of, for example, about 2 mm, and are provided at substantially equal intervals, for example, every 7.2 °, on the inner side of the outer periphery of the lid 444. An exhaust port 461 is provided at the upper center of the lid 444, and an exhaust device 462 is connected to the exhaust port 461. As shown in FIG. 14, the lid 444 is provided with a buffer 452 for temporarily storing the inert gas supplied from the vent 451 and passing the inert gas to each of the vents 451. Then, an inert gas, for example, a nitrogen gas, is supplied from the gas supply unit 453 to the processing region via the buffer 452 and the vent 451. The upper and lower vents 451 of the three upper, middle, and lower vents 451 supply nitrogen gas substantially in parallel to the surface of the wafer W, and the middle vent 451 is disposed on the surface of the wafer W. Is to supply nitrogen gas in an oblique direction. Thereby, uniform purging becomes possible.

Note that, similarly to the first embodiment, lift pins 347 as three support members for penetrating the hot plate 443, placing the wafer W thereon, and elevating the same are provided to be able to move up and down. The lift pins protrude from the surface of the hot plate 443 in the raised state to support the wafer W substantially horizontally, and in the lowered state, are buried in the hot plate 443 and place the wafer on the hot plate 443.

In this embodiment, since the vent 451 is provided particularly on the lid 444 side, the nitrogen gas ejected from the vent 451 is not directly blown onto the hot plate 443. Therefore, the temperature of the hot plate 443 is stabilized.

The present invention is not limited to the above-described embodiment, and can be variously modified. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. Further, the type of the film is not limited to the interlayer insulating film.

It is a top view of the SOD system concerning an embodiment of the invention. It is a front view of the SOD system shown in FIG. FIG. 2 is a rear view of the SOD system shown in FIG. 1. FIG. 3 is a plan view of a low-oxygen curing / cooling processing station according to the embodiment of the present invention. FIG. 5 is a sectional view of the low-oxygen curing / cooling processing station shown in FIG. 4. It is a flowchart which shows the operation | movement process of the SOD system concerning embodiment of this invention. It is a flowchart (the 1) showing the operation | movement mechanism of the low oxygen cure / cooling processing station which concerns on embodiment of this invention. It is a flowchart (the 2) showing the operation | movement mechanism of the low oxygen cure / cooling processing station which concerns on embodiment of this invention. It is a flowchart (the 3) showing the operation | movement mechanism of the low oxygen cure / cooling processing station which concerns on embodiment of this invention. FIG. 4 is a diagram illustrating a supply amount of N2 during a heating process in a heat treatment chamber. FIG. 7 is a cross-sectional view of a low-oxygen curing / cooling processing station according to another embodiment of the present invention. It is an enlarged view of the opening part in FIG. FIG. 12 is a perspective view of a lid in FIG. 11. FIG. 12 is an enlarged sectional view of the lid shown in FIG. 11.

Explanation of reference numerals

341, heat treatment device 342, cooling treatment device 343, hot plate 346, ring shutter 346a, vent hole 347, lift pin 353, cooling plate 356, supply pipe 356a, jet port W, wafer

Claims (3)

A cooling plate on which the substrate is mounted,
A processing chamber formed with a processing space for processing the substrate between the cooling plate,
Inert gas supply means for supplying a cooled inert gas,
A gas discharge port disposed substantially above the center of the substrate mounted on the cooling plate and having an ejection port for ejecting the inert gas supplied from the inert gas supply means while being inclined toward the outer periphery of the substrate. A substrate processing apparatus comprising: an active gas ejection nozzle. A substrate processing apparatus used to form an interlayer insulating film on a substrate,
A cooling plate on which the substrate is mounted,
A processing chamber formed with a processing space for processing the substrate between the cooling plate,
Inert gas supply means for supplying a cooled inert gas,
A gas discharge port disposed substantially above the center of the substrate mounted on the cooling plate and having an ejection port for ejecting the inert gas supplied from the inert gas supply means while being inclined toward the outer periphery of the substrate. A substrate processing apparatus comprising: an active gas ejection nozzle. The substrate processing apparatus according to claim 1 or 2, wherein
A substrate processing apparatus, wherein a rectifying plate is provided near a discharge port of the inert gas discharge nozzle.

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