JP2004111223A - Heater, heater alignment and manufacturing method of the heater - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heater, and a manufacturing method, with high function, with multi-layer integration easily attained and capable of a high-speed operation. <P>SOLUTION: The heater, as an example, is provided with an electric insulating board 1 with front and rear faces, a first and a second penetrating conductors 7, 8 exposed on the front face by penetrating the electric insulating board 1 and separated from each other by a prescribed distance, a resistor layer 3 formed on the front surface above and connecting the first and the second penetrating conductors, and a heat transfer body 10 arranged to pinch a prescribed part of the electric insulating substrate together with the resistor layer and with a larger coefficient of thermal conductivity than the electric insulating substrate. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates generally to heating devices, and more particularly to high speed heaters that are easy to integrate.
[0002]
[Prior art]
BACKGROUND ART In many technical fields, devices for heating solids, liquids, and gases are required. In particular, by performing pulse-like heating, a physical or chemical change is caused in a non-heated object, and thereby other physical or chemical changes are caused to control the target object. For example, a mechanism is used in which a fluid sealed in a channel is heated and expanded by a heater as a heating device to increase the internal pressure, and another fluid is driven by the internal pressure. Examples are an ink driving unit for a thermal print head and an in-channel pressure control unit for opening and closing a contact of a conductive fluid switch. In such an application, a high-speed heat response heater capable of performing both heating and cooling of a non-heating target at a high speed has been demanded.
[0003]
Furthermore, in recent years, there has been a demand for miniaturization and high density of electric and electronic devices, and a thin film heater is mounted or integrated on a circuit using a low-temperature sintered multilayer ceramic substrate or a ball grid array, which is attracting attention as being suitable for high integration. Technology is being researched. When the ceramic substrate is a multilayer ceramic substrate or a circuit is mounted on the back surface of the substrate by a ball grid array, it is generally necessary to form a through-substrate conductor for interlayer connection on the ceramic substrate 1.
In this specification, a circuit including a heater and a peripheral circuit is referred to as a heater.
[0004]
In the first prior art described in Japanese Patent Application Laid-Open No. 62-168375, a resistance heating element (heater) 100 for a thermal head is provided on a ceramic (alumina) substrate 1 having excellent electrical insulation as shown in FIG. After the glass glaze layer 2 is applied or printed and fired, a resistance heating element layer 3 for heat generation, electrodes 4, 5 and a wear-resistant protective layer 6 are sequentially provided on the glass glaze layer 2. A voltage is applied between the electrodes 4 and 5 to heat the heat-sensitive color material ribbon in the heat generating portion S. The glass glaze layer 2 serves as a heat insulating material, improves the thermal efficiency of the heater, and saves power.
[0005]
On the other hand, the thermal printer head according to the second prior art described in Japanese Patent Application Laid-Open No. 3-178460 has the same structure as that of the first prior art, but has a structure in which the glass glaze layer is omitted. To substitute for the heat insulating effect of the glass glaze layer, the thermal conductivity of the ceramic substrate is reduced. By making the ceramic substrate an alumina substrate, reducing the alumina component ratio from normal, instead increasing the ratio of components having a small thermal conductivity, the thermal conductivity of the ceramic substrate is reduced to about 6, even without a glass glaze layer, The heater can be driven with low energy.
[0006]
In recent years, for example, as described in Japanese Patent Application Laid-Open No. 2002-50869, a technique for manufacturing a multilayer ceramic wiring board has been developed, and is often used as a board for a hybrid integrated circuit device or the like on which various electronic components are mounted. ing.
[0007]
[Patent Document 1]
JP-A-62-168375 (page 2, FIG. 1)
[Patent Document 2]
JP-A-03-178460 (page 2-3, FIG. 2-4)
[Patent Document 3]
JP-A-2002-50869 (paragraphs 2-6, 16-39, FIG. 1)
[0008]
[Problems to be solved by the invention]
In the first prior art, a glass glaze layer 2 having a thickness for suppressing heat conduction is applied or printed on a fired and polished ceramic substrate 1 and fired. The glass glaze layer 2 will be interposed between the surfaces of. Therefore, it is difficult to connect the wiring on the glass glaze layer 2 and the wiring on the ceramic substrate 1. Therefore, the bias wiring for applying a voltage to the electrodes 4 and 5 is limited within the surface of the glass glaze layer 2. On the other hand, since the through-substrate conductor is formed simultaneously with the firing of the ceramic substrate 1, it is impossible to extend and expose the through-substrate conductor on the surface of the glass glaze layer 2 by a normal process. Therefore, it is extremely difficult to configure a ball grid array substrate that supplies power from the back surface of the substrate 1 using the through-substrate conductor.
In the second prior art, considering cooling when the heater is turned off, the heat transfer performance of the alumina substrate itself is reduced, the cooling time of the heater is prolonged, and high-speed response and high-speed repetitive operation of the heater cannot be expected.
[0009]
Accordingly, a first object of the present invention is to provide a heater capable of high-performance, easy to integrate into multiple layers, and capable of operating at high speed, and a method of manufacturing the heater.
A second object of the present invention is to provide a heater having a low manufacturing cost and a method for manufacturing the heater.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, an example of the heater according to the present invention includes an electrically insulating substrate having a front surface and a back surface, and a predetermined distance from each other that penetrates the electrically insulating substrate and is exposed at least on the front surface. First and second penetrating conductors separated only by a distance, a resistive layer formed on the surface to connect the first and second penetrating conductors, and a predetermined portion of the electrically insulating substrate being connected to the resistive layer. And a heat conductor having a higher thermal conductivity than the electrically insulating substrate.
Then, it is preferable that the heat transfer body be exposed from the back surface of the electrically insulating substrate to the outside of the electrically insulating substrate in order to efficiently release heat from the heat generating portion of the heater. Further, a heat radiating terminal for heat radiating may be provided in the exposed portion to improve heat radiating efficiency.
[0011]
The thickness of the predetermined portion of the electrically insulating substrate is determined by multiplying a product of a conduction time of a supply current from the first and second penetrating conductors and a thermal diffusivity of the predetermined portion to generate heat in the resistance layer. It is better to be determined according to. As a guideline for this, when the thickness H [m] of the predetermined portion is t [s] and the thermal diffusivity of the predetermined portion is a [m ² / s], the thickness H [m] is 2√ (3 at). It is good to be the following.
[0012]
As the electrical insulating substrate, a ceramic multilayer insulating substrate is preferable. If each of the first and second penetrating conductors is a metal bump provided on the back surface of the electrical insulating substrate, a ball grid array is used. It is convenient to configure. In addition, if a plurality of heaters are integrated on the electrically insulating substrate to form a heater array, it is possible to realize a very small high-density mounting heater.
[0013]
In another example of the present invention, a method is provided for manufacturing a heater for mounting a heating resistor and energizing the heating resistor to generate heat. The method includes a first step of preparing an electrically insulating substrate having first and second through-holes and a non-through-hole, and first and second through-holes in the first and second through-holes. A second step of filling a conductive material and filling the non-through hole with a heat transfer material, and fixing the first and second through conductive materials and the heat transfer material to the electrically insulating substrate; A third step of forming first and second through conductors and a heat conductor having a higher thermal conductivity than the electrically insulating substrate, respectively, and placing the heating resistor at the bottom of the non-through hole. A fourth step of providing on the near surface of the electrically insulating substrate and coupling to the first and second through conductors.
[0014]
When the electric insulating substrate is a multilayer insulating substrate made of ceramic or the like, a method in which a heating resistor is mounted on an electric insulating substrate formed by laminating a plurality of single-layer insulating substrates is preferable. The method includes a first step of providing first and second through-holes in all of the single-layer insulating substrates so as to align and penetrate all of the single-layer insulating substrates, and at least the first single-layer insulating substrate. In the step of providing a third through-hole in the single-layer insulating substrate excluding a substrate, when aligning the first and second through-holes, all the third through-holes are aligned. A third step of filling the first and second through holes with first and second through conductor materials and filling the third through hole with a heat conductor material; 1. All the single-layer insulating substrates are fixed and integrated with the first single-layer insulating substrate closing the third through-hole and forming a non-through hole by aligning the second through-holes. Forming a first and second through conductors and a heat conductor having a higher thermal conductivity than the electrically insulating substrate, respectively; Wherein the antibody first is provided on a surface of the nearest to the bottom of the non-through hole first single layer insulating substrate includes a fifth step of coupling the second through-conductor.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
In the description of the embodiments of the present invention, the dimensions of the respective parts of the heater illustrated in FIGS. 1-3 to be referred to below do not reflect the actual dimensional ratio of the heater for convenience of the description. .
With reference to FIG. 1, new findings on the first and second prior arts will be described.
In the heater 100 having the resistance heating element of the first prior art, the thermal conductivity of the ceramic substrate 1 is about 10 to 20 times that of the glass substrate, and the ceramic substrate 1 alone heats more than the glass substrate. Energy, ie power and time. Therefore, the resistance heating element 100 has a glass glaze layer 2 having a small thermal conductivity provided between the resistance heating element layer 3 and the ceramic substrate 1 to improve the thermal efficiency of the heater.
Further, when the resistance heating element layer 3 is made of a thin film having a small heat capacity capable of high-speed operation, the substrate surface needs to be sufficiently flat, but the glass glaze layer 2 has many irregularities on the surface of the ceramic substrate 1. This also has the effect of realizing the flattening of the surface at the same time.
[0016]
When a low-temperature sintered multilayer ceramic (LTCC) substrate is used as the ceramic substrate 1 for high integration and high functionality of the heater, or when a ball grid array mounting is to be performed on the back surface of the ceramic substrate 1, the ceramic substrate is used. First, it is necessary to form a through-substrate conductor for interlayer connection. However, the through-substrate conductor is formed on the substrate in a step before firing the ceramic substrate 1 and the surface of the through-substrate conductor is obtained on the surface of the ceramic substrate 1 by polishing after firing. On the other hand, the step of forming the glass glaze layer 2 is performed after firing the ceramic substrate 1 due to the nature of the material. For this reason, it is impossible in the manufacturing process to directly connect the electrodes 4 and 5 of the resistance heating element layer 3 which is a thin film resistance layer on the glass glaze layer 2 and the through-substrate conductor. Therefore, they must be connected via another conductor wiring.
[0017]
When the thermal response of the heating of the thin film heater is set to about several milliseconds, the thickness of the glass glaze layer 2 to be operated efficiently is about several tens μm to about 100 μm or more due to the thermal properties of glass. In order to connect the electrodes 4 and 5 of the resistance heating element layer 3 (heater) formed on the glass glaze layer 2 with this thickness to the wiring on the ceramic substrate 1, the thickness is gradually changed at the edge of the glaze. Alternatively, it is necessary to form a connection conductor in which a metal conductor paste is attached to the connection portion with a thickness equal to or greater than the glass thickness by adding a conductor thick film process. The former causes an increase in cost due to the addition of a manufacturing process in which the thickness is gradually changed. Further, there is a problem that an extra substrate area is required for gradually changing the thickness, and the resistance of the connection conductor is lost. There is a problem in fine processing such as deterioration of the positioning accuracy due to the positioning accuracy and the fluidity of the conductive paste.
[0018]
On the other hand, in the second conventional technique, the thermal conductivity of the ceramic substrate is reduced to about 6, so that the heater can be driven with low energy without a glass glaze layer. However, considering the cooling of the heater when the heater is turned off, it has been found that high-speed response and high-speed repetitive operation cannot be expected because the heat transfer performance of the substrate itself is reduced.
[0019]
Therefore, the inventor of the present invention has studied a structure capable of efficiently and rapidly increasing and decreasing the temperature of the heater without the glass glaze layer. As a result, even without the glass glaze layer, when the heater is turned off, the heater's heat reaches the layer with a good heat transfer coefficient and the heat diffuses quickly, realizing a rapid decrease in the heater temperature. Thus, a heater that can be driven at high speed can be realized.
The present invention inspired by the above findings will be described below on the basis of embodiments of the present invention.
[0020]
FIG. 2 is a sectional view of the heater 200 according to one embodiment of the present invention. 2, components having the same functions as those in FIG. 1 are denoted by the same reference numerals. Even though the reference numbers are the same, not all components having the same reference numbers have the same material or detailed configuration. In FIG. 2, a single-layer insulating substrate 1 having excellent electrical insulation has embedded therein substrate-penetrating conductors 7 and 8 penetrating the substrate 1 and a non-penetrating heat conductor 10. On the surface of the insulating substrate 1, a thin-film resistance layer 3, which is a heating resistance layer, is formed so as to bridge the through-substrate conductors 7 and 8 with the electrodes 4 and 5 as coupling members. Then, both the electrodes 4 and 5 and the thin-film resistance layer 3 are further covered with a protective layer 6. On the back surface of the insulating substrate 1, metal conductor bumps 11, 12, and 13 are formed which are coupled to lower ends of the through-substrate conductors 7, 8 and the heat conductor 10, respectively. When a driving voltage is applied between the through-substrate conductors 7 and 8 via the conductor bumps 11 and 12, a pulse current flows through the thin-film resistance layer 3 via the electrodes 4 and 5 and the thin film between the electrodes 4 and 5 The resistance layer 3 (heat generating portion) generates heat. The non-penetrating heat transfer body 10 is close to the heat generating portion of the thin film resistance layer 3 with a part of the substrate 1 interposed between the heat transfer body 10 and the thin film resistance layer 3. The drive voltage is turned on and off to control the heat generation of the heat generating portion. The pulse current for driving the thin-film resistance layer 3 is a rectangular pulse current in this embodiment.
[0021]
As the insulating substrate 1, a glass-ceramic substrate obtained by mixing and firing a glass component from 20% to 70% in a ceramic material, or a heat-resistant resin substrate such as polyimide can be used. A glass-ceramic substrate having a maximum heater temperature exceeding 200 ° C., and a low-temperature heat-resistant resin substrate having excellent workability and having a low cost are preferably used in terms of performance and cost. The thin film resistance layer 3 is formed on the insulating substrate 1 by a thin film technique, and is made of a thin film of tantalum nitride, nickel or nichrome having a thickness of 0.5 μm or less and 0.05 μm or more. In particular, in order to obtain a highly reliable and highly accurate resistor free of voids on a ceramic substrate, the thickness is preferably 0.5 μm or more. Tantalum nitride is used to obtain heater resistance stability (long-term stability and low thermal coefficient of resistance), and it is preferable to use a nickel or nichrome thin film that is easy to manufacture. When a voltage is applied between the through-substrate conductors 7 and 8, the heat generating portion of the thin-film resistance layer 3 operates as a heater. Insulating substrate 1 Yes by increasing the low thermal conductivity component, its thermal conductivity is preferably 1~6W / mK In other words, when converted to the thermal diffusivity of about ^{8 × 10 -7 ~5 × 10 -} 6 is adjusted to a range of m / ^{s 2.} With this configuration, the heat generating portion can be heated to a desired temperature with a small amount of energy. That is, in the heater 200, the heater (the heat generating portion S) can be efficiently raised to a desired temperature by applying a low driving voltage, applying a short-time voltage, or applying a short-time low voltage.
[0022]
The heat transfer body 10 disposed immediately below the heat generating portion of the thin film resistance layer 3 via a part of the insulating substrate 1 only needs to have much better heat transfer characteristics than the insulating substrate, and is not necessarily a conductor or metal. No need. The heat transfer body 10 may be a resin or ceramic mixed with aluminum nitride powder or boron nitride powder. However, materials similar to the through-substrate conductors 7 and 8 are preferred in terms of work and performance. The heat transfer body 10 is embedded from the back surface of the insulating substrate 1 and is separated from the upper end of the heat transfer body 10 by a distance H (> 0) from the front surface of the insulating substrate 1. It is most reasonable that the shape of the upper end of the heat transfer body 10 is flat because of the uniformity of the heat transfer characteristics and the manufacturing reasons. In one embodiment of the present invention, a hole is formed in the insulating substrate 1 from the back surface so as to form the heat transfer body 10 and a portion having a thickness H remains at the bottom of the hole. Insert and fix to.
[0023]
The heat transfer body 10 is connected to a printed board, a resin board, or the like with low thermal resistance via the metal conductor bumps 13. The thickness H depends on the thermal diffusivity of the insulating substrate 1 and the ON time of a heater for performing energy injection. When the ON time of the heater is t [s] and the thermal diffusivity of the insulating substrate 1 is a [m ² / s], the diffusion distance is preferably 2√ (3 at) or less. Assuming a heater on time of 1 ms, H is approximately between 20 μm and 300 μm for many practical substrate materials. In order to obtain a substantial effect, it is preferable to select H depending on the use of the heater in a range where the lower limit is 70% of the diffusion distance. If it is desired to give priority to cooling even if driving energy is wasted to some extent, H may be selected to be small, and if it is desired to reduce driving energy, H may be selected to be large.
Of course, the thickness H may be set to a number of different values, and the thermal response of the heater may be tested for the values to experimentally determine the optimum value of the high-speed response, for example. Further, the relationship between the heater ON time and the optimum H can be plotted and used.
[0024]
With such a structure, at the end of the heater ON time, the wave front of the thermal wave generated from the thin film resistance layer 3 is transmitted to the upper end of the heat transfer body 10 in the insulating substrate 1 and after the timing when the heater is turned off. The heat is radiated from the heat transfer body 10 to the outside of the substrate. In this way, a high-efficiency cooling effect can be obtained when the heater is off without affecting the characteristics when the heater is on. With this structure, a high-speed thermal response can be realized in both heating and cooling.
The bumps 11-13 are most commonly formed by applying heat to solder balls or solder paste. However, for applications requiring heat resistance at high temperatures or the like, it may be preferable to use gold bumps or the like. . The heater can be made into a ball grid array structure using the bumps 11-13.
[0025]
In another embodiment of the present invention shown in FIG. 3, the single-layer insulating substrate 1 in FIG. 2 has a multilayer insulating substrate structure such as an LTCC substrate made of a similar material. The insulating substrate 1 and the through-substrate conductors 7 and 8 in FIG. 2 are divided into a plurality of layers, that is, a plurality of single-layer insulating substrates. First, each layer is formed as a green sheet, and then the plurality of layers are stacked and sintered. It is integrated. FIG. 3 shows a cross-sectional view of the heater 300 thus formed.
A method for manufacturing such a multilayer insulating substrate is well known, for example, as described in JP-A-2002-50869 (paragraphs 2-6, 16-39, FIG. 1), and details thereof will be omitted.
[0026]
3, the components having the same functions as those in FIGS. 1 and 2 are denoted by the same reference numerals. Although not particularly limited, an embodiment of the present invention employing a low-temperature sintered multilayer ceramic substrate which is a preferable substrate will be described below. Each layer and the number of layers constituting the single-layer insulating substrate can be appropriately selected so as to satisfy manufacturing conditions, circuit conditions, and mechanical conditions.
First, the first layer at the bottom of the substrate has a glass ceramic layer 1d obtained by mixing a glass component in a ceramic material from 20% to 70% and firing, and through-substrate conductors 7d, 8d, and 10d. Further, the cap layers 7g, 8g, and 10g for relieving misalignment may be attached to the penetrating conductors 7d, 8d, and 10d as appropriate. The cap layer may be applied to either side, but is generally applied to the lower substrate for reasons of the manufacturing process. As in the first embodiment, the bumps 11-13 are formed by applying heat to solder balls, solder paste, or the like. For applications requiring heat resistance or the like, the bumps may be formed with gold bumps or the like as described above.
[0027]
The second layer on the first layer has the same material and configuration as the first layer. It has a ceramic layer 1c and penetrating conductors 7c, 8c, 10c. In addition, misalignment relief metal cap layers 7f, 8f, and 10f may be attached to the through-substrate conductors 7c, 8c, and 10c as appropriate.
The third layer on the second layer has the same material and configuration as the first and second layers. It has a ceramic layer 1b and penetrating conductors 7b, 8b, 10b. Also, the cap layers 7e, 8e, 10e for relieving misalignment may be attached to the penetrating conductors 7b, 8b, 10b as appropriate. The cap layer originally prevents the substrate conductor material (paste or powder before firing) from jumping out of the through-holes in a process such as firing in addition to absorbing the displacement, and is provided above and below the substrate conductor material during firing. The thickness is about 1 to 10 μm.
[0028]
The fourth layer on the third layer has a configuration that satisfies different conditions from the first to third layers. It has only the ceramic layer 1a and the through-substrate conductors 7a and 8a. In addition, the cap layer for relieving misalignment is removed from the through-substrate conductors 7a and 8a before the formation of the resistive thin film after firing. If desired, relief cap layers 7e, 8e may be attached to the through-substrate conductors 7a, 8a.
After firing, the fourth layer is adjusted by polishing or the like before forming the thin-film resistance layer 3 and the electrodes 4 and 5 so as to have an optimum thickness substantially equal to the thickness H in FIG. The cap layer on the surface of the fourth layer is removed by this polishing, and the thickness H is adjusted.
[0029]
In the first to fourth layers, the through-substrate conductors 7a, 7b, 7c, 7d are aligned with each other, the through-substrate conductors 8a, 8b, 8c, 8d are aligned with each other, and the through-substrate conductor 10b, The layers 10c and 10d are aligned so as to be aligned with each other, sequentially stacked and fixed, sintered, and integrated. In other words, depending on the material and structure to be sintered, the mass of the powder paste changes into a so-called pottery at a sintering temperature in the range of approximately 800 ° C. to 2000 ° C. In the integrated substrate, the penetrating conductors 7a, 7b, 7c, and 7d constitute a penetrating conductor equivalent to the penetrating conductor 7 of FIG. 2, and the penetrating conductors 8a, 8b, 8c, and 8d of FIG. The penetrating conductors equivalent to the two penetrating conductors 8 are formed, and the substrate penetrating conductors 10b, 10c, and 10d constitute the penetrating conductors equivalent to the heat conductor 10.
[0030]
On the surface of the integrated substrate, the thin film resistance layer 3, the electrodes 4, 5 and the protective layer 6 are formed as in the embodiment of FIG. Metal conductor bumps 11, 12, and 13 electrically connected to 7c, 8c, and 10c are formed, respectively, and heater 300 is obtained. In this embodiment, since a multilayer substrate is used in which individual substrates divided into first to fourth layers are stacked, an equivalent of the heat transfer body 10 shown in FIG. 2 is formed by the stacking without additional steps. I'm sorry. The connection between the electrodes 4 and 5 and the through-substrate conductors 7a and 8a in FIG. 3 is made via a resistance layer. The conductive electrode avoids current concentration and regulates the resistance of the heating section.
[0031]
In addition, since cap layers 10e, 10f, and 10g made of a conductor film are also provided on the surfaces of the through-substrate conductors 10b, 10c, and 10d that are in contact with each other, the alignment of the individual substrates becomes easy. The diameters of the through-substrate conductors 10b, 10c, and 10d are preferably large so that the diameters of the through-conductors 10b, 10c, and 10d sufficiently overlap each other including the positioning error. On the contrary, in order that the upper surface of the heat transfer member 10 overlaps at least 80% of the heat generation portion of the thin-film resistance layer 3 and that the integration density is not reduced, the heat generation portion is opposite to the upper surface of the heat transfer member 10. It is preferred that the selection be made so as to overlap at least 80% of the surface.
It is also clear that the ceramic layers 8a, 8b, 8c, 8d may generally be other equivalent insulating substrates.
Furthermore, the heat conductor 10 and the through-substrate conductors 10b, 10c, and 10d are preferably made of metal, but may be any heat conductor having a higher thermal conductivity than the insulating substrate. Will also be obvious.
[0032]
【The invention's effect】
As described above in connection with the embodiments, the implementation of the present invention makes it possible to reduce the area required for connection between the electrode of the thin film heater and the through-substrate conductor, reduce the number of additional steps, and provide a heater structure suitable for fine processing. can get.
In other words, at the time of starting heating of the heater, the temperature of the heater is efficiently raised, and after the heating of the heater is completed, the heat generated in the heater layer reaches the layer having a good heat transfer coefficient, and the heat is diffused. As a result, high-speed cooling is achieved.
Further, it is easy to form a large number of resistance layers on the same insulating substrate, drive the individual heater elements independently from the respective through conductors, or use the electrodes in common. For example, a heater array that contributes to downsizing of the device is configured. It is easy to mix peripheral electric circuits and the like, but when mixing semiconductors and the like, care must be taken to increase the temperature of the substrate.
Although the drive current pulse waveform of the resistance layer is a rectangular pulse in the embodiment, it can be easily shaped in accordance with a desired heating mode.
When a substrate material having sufficient strength is used, only the fourth layer in FIG. 3 may be used, and the first to third layers may be omitted in some cases. In this case, bumps are formed on the through-substrate conductors 7a and 8a, and the thickness of the substrate in FIG. 2 is equivalent to the thickness of the portion where the substrate is sandwiched. Of course, the heat transfer body is adhered to the substrate or brought into close contact with the substrate by another holding mechanism.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a prior art heater formed on a ceramic substrate having a glass glaze layer.
FIG. 2 is a cross-sectional view of a heater according to one embodiment of the present invention.
FIG. 3 is a cross-sectional view of a heater according to another embodiment of the present invention using a low-temperature sintered multilayer ceramic substrate.
[Explanation of symbols]
1, 1a-1d Insulating substrate 2 Glass glaze layer 3 Resistance heating element layer 4, 5 Electrode 6 Protective layer 7, 8 Substrate penetrating conductor,
7a-7d, 8a-8d, 10b-10d Through-substrate conductor 10 Heat conductor 11-13 Metal bump

Claims (15)

An electrically insulating substrate having a front surface and a back surface, and first and second penetrating conductors that penetrate the electrically insulating substrate and are exposed at least on the front surface and are separated from each other by a predetermined distance;
A resistance layer formed on the surface and connecting the first and second penetrating conductors;
A heater disposed so as to sandwich a predetermined portion of the electrically insulating substrate together with the resistance layer, and a heat conductor having a higher thermal conductivity than the electrically insulating substrate. The heater according to claim 1, wherein the heat transfer body is exposed from the back surface of the electrically insulating substrate to the outside of the electrically insulating substrate. The heater according to claim 1 or 2, wherein the electrically insulating substrate is a multilayer insulating substrate. 4. The heater according to claim 3, wherein the predetermined portion of the electrically insulating substrate is at least one of a single-layer insulating substrate constituting the multilayer insulating substrate. The heater according to claim 1, wherein the heat transfer body is a metal. The heater according to claim 5, wherein the electrically insulating substrate is a ceramic substrate. The thickness of the predetermined portion of the electrically insulating substrate depends on a product of a conduction time of a supply current from the first and second penetrating conductors and a thermal diffusivity of the predetermined portion in order to generate heat in the resistance layer. The heater according to any one of claims 1 to 6, which is determined by: The thickness H [m] of the predetermined portion is not more than 2√ (3 at) when the energization time is t [s] and the thermal diffusivity of the predetermined portion is a [m ² / s]. The heater according to claim 7, wherein The heater according to any one of claims 1 to 8, wherein a heat radiating terminal for the heat transfer body to radiate heat to the outside is provided on the back surface. The heater according to any one of claims 1 to 9, wherein each of the first and second penetrating conductors has a metal bump provided on the back surface of the electrically insulating substrate. A heater array comprising a plurality of heaters according to claim 10 integrated on said electrically insulating substrate. A method for manufacturing a heater for mounting a heating resistor and generating heat by energizing the heating resistor,
A first step of preparing an electrically insulating substrate having first and second through holes and non-through holes;
A second step of filling the first and second through holes with first and second through conductor materials and filling the non-through holes with a heat conductor material;
The first and second penetrating conductor materials and the heat conducting material are fixed to the electrically insulating substrate, and the first and second penetrating conductors and the conducting material having higher thermal conductivity than the electrically insulating substrate, respectively. A third step of forming a heat body;
A fourth step of providing the heating resistor on the surface of the electrically insulating substrate closest to the bottom of the non-through hole and coupling the heating resistor to the first and second through conductors.
Manufacturing method of heater. A method for manufacturing a heater for mounting a heating resistor on an electrical insulating substrate formed by laminating a plurality of single-layer insulating substrates and supplying heat to the heating resistor to generate heat,
A first step of providing first and second through-holes in all of the single-layer insulating substrates so as to align and penetrate all of the single-layer insulating substrates;
When aligning the first and second through holes in the step of providing third through holes in the single-layer insulating substrate excluding at least the first single-layer insulating substrate, all the third through holes are aligned. A second step of also aligning;
A third step of filling the first and second through holes with first and second through conductor materials and filling the third through hole with a heat conductor material;
The first and second through holes are aligned and all the single layer insulating substrates are fixed in a state where the first single layer insulating substrate closes the third through hole and forms a non-through hole. A fourth step of forming the first and second through conductors and a heat conductor having a higher thermal conductivity than the electrically insulating substrate, respectively,
A fifth step of providing the heating resistor on the surface of the first single-layer insulating substrate closest to the bottom of the non-through hole and coupling the heating resistor to the first and second through conductors.
Manufacturing method of heater. The heater of claim 13, wherein the single-layer insulating substrate is a ceramic substrate, and wherein the fourth step includes sintering all of the ceramic substrates in a predetermined order, sintering, and thus integrating. Production method. 15. The heater according to claim 13, wherein the fifth step forms the heating resistor on the surface after polishing the surface of the first single-layer insulating substrate. Manufacturing method.

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