JP2004084040A5 - - Google Patents

Download PDF

Info

Publication number
JP2004084040A5
JP2004084040A5 JP2002249796A JP2002249796A JP2004084040A5 JP 2004084040 A5 JP2004084040 A5 JP 2004084040A5 JP 2002249796 A JP2002249796 A JP 2002249796A JP 2002249796 A JP2002249796 A JP 2002249796A JP 2004084040 A5 JP2004084040 A5 JP 2004084040A5
Authority
JP
Japan
Prior art keywords
thin film
heating element
reaction chamber
manufacturing apparatus
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002249796A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004084040A (ja
JP4054234B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002249796A priority Critical patent/JP4054234B2/ja
Priority claimed from JP2002249796A external-priority patent/JP4054234B2/ja
Publication of JP2004084040A publication Critical patent/JP2004084040A/ja
Publication of JP2004084040A5 publication Critical patent/JP2004084040A5/ja
Application granted granted Critical
Publication of JP4054234B2 publication Critical patent/JP4054234B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002249796A 2002-08-28 2002-08-28 薄膜デバイス用製造装置および薄膜デバイスの製造方法 Expired - Fee Related JP4054234B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002249796A JP4054234B2 (ja) 2002-08-28 2002-08-28 薄膜デバイス用製造装置および薄膜デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002249796A JP4054234B2 (ja) 2002-08-28 2002-08-28 薄膜デバイス用製造装置および薄膜デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2004084040A JP2004084040A (ja) 2004-03-18
JP2004084040A5 true JP2004084040A5 (enExample) 2005-09-02
JP4054234B2 JP4054234B2 (ja) 2008-02-27

Family

ID=32056785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002249796A Expired - Fee Related JP4054234B2 (ja) 2002-08-28 2002-08-28 薄膜デバイス用製造装置および薄膜デバイスの製造方法

Country Status (1)

Country Link
JP (1) JP4054234B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016111101A (ja) * 2014-12-03 2016-06-20 株式会社ニューフレアテクノロジー 気相成長方法および気相成長装置
CN109860321A (zh) * 2019-03-08 2019-06-07 泸州金能移动能源科技有限公司 一种封装光伏组件用防错位防气泡装置及其使用方法

Similar Documents

Publication Publication Date Title
JP2005537660A5 (enExample)
WO2012044622A3 (en) Low-temperature dielectric film formation by chemical vapor deposition
JP2009144242A5 (ja) タングステン膜の製造方法および装置
JP2004160977A5 (enExample)
JP2008163457A5 (ja) 成膜装置
WO2007005832A3 (en) Reliant thermal barrier coating system and related methods and apparatus of making the same
WO2007149788A3 (en) Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cure
TW200715376A (en) Method for depositing silicon-containing films
WO2005027189A3 (en) Formation of a metal-containing film by sequential gas exposure in a batch type processing system
JP2007277723A5 (enExample)
WO2003031679A3 (en) Method for depositing metal layers employing sequential deposition techniques
TW200644085A (en) A plasma enhanced atomic layer deposition system having reduced contamination
JP2016121403A5 (enExample)
WO2003065424A3 (en) Apparatus for cyclical deposition of thin films
JP2006524439A5 (enExample)
TNSN07064A1 (en) Atmospheric pressure chemical vapor deposition
TW200833866A (en) Method for improving atom layer deposition performance and apparatus thereof
WO2006137873A3 (en) A chemical vapor deposition (cvd) apparatus usable in the manufacture of superconducting conductors
WO2018212882A3 (en) METHOD FOR CONTROLLING THE CONSTRAINTS OF THIN FILMS LAID DOWN BY CVD FOR DISPLAY TYPE APPLICATION
WO2006107532A3 (en) Single wafer thermal cvd processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon
WO2008078502A1 (ja) 成膜装置および成膜方法
WO2001066834A3 (en) Chemical vapor deposition process for fabricating layered superlattice materials
TW200733206A (en) Substrate processing apparatus, substrate processing method, program, and recording medium having the same
WO2011084292A3 (en) Silicon thin film solar cell having improved haze and methods of making the same
WO2007067604A3 (en) Method of making undoped, alloyed and doped chalcogenide films by mocvd processes