JP2004071558A - 発光装置の作製方法 - Google Patents
発光装置の作製方法 Download PDFInfo
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- JP2004071558A JP2004071558A JP2003279442A JP2003279442A JP2004071558A JP 2004071558 A JP2004071558 A JP 2004071558A JP 2003279442 A JP2003279442 A JP 2003279442A JP 2003279442 A JP2003279442 A JP 2003279442A JP 2004071558 A JP2004071558 A JP 2004071558A
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- anode
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- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 124
- 238000010438 heat treatment Methods 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000012298 atmosphere Substances 0.000 claims abstract description 14
- 239000012212 insulator Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 238000005406 washing Methods 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 36
- 238000005192 partition Methods 0.000 abstract description 34
- 239000010419 fine particle Substances 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 147
- 239000010408 film Substances 0.000 description 142
- 239000011229 interlayer Substances 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 25
- 239000011347 resin Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 21
- 239000011159 matrix material Substances 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 17
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 239000011368 organic material Substances 0.000 description 13
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 12
- 238000007789 sealing Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 description 6
- 238000001552 radio frequency sputter deposition Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004261 CaF 2 Inorganic materials 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 150000005072 1,3,4-oxadiazoles Chemical class 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 206010027146 Melanoderma Diseases 0.000 description 1
- -1 MgAg Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- IZMLNVKXKFSCDB-UHFFFAOYSA-N oxoindium;oxotin Chemical compound [In]=O.[Sn]=O IZMLNVKXKFSCDB-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003190 poly( p-benzamide) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003279442A JP2004071558A (ja) | 2002-07-25 | 2003-07-24 | 発光装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002217248 | 2002-07-25 | ||
| JP2003279442A JP2004071558A (ja) | 2002-07-25 | 2003-07-24 | 発光装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004071558A true JP2004071558A (ja) | 2004-03-04 |
| JP2004071558A5 JP2004071558A5 (enExample) | 2006-08-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003279442A Withdrawn JP2004071558A (ja) | 2002-07-25 | 2003-07-24 | 発光装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004071558A (enExample) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005309400A (ja) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
| JP2008270117A (ja) * | 2007-04-25 | 2008-11-06 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置 |
| JP2009245644A (ja) * | 2008-03-28 | 2009-10-22 | Casio Comput Co Ltd | 発光装置の製造装置及び製造方法 |
| WO2011105140A1 (ja) * | 2010-02-24 | 2011-09-01 | コニカミノルタホールディングス株式会社 | フレキシブル有機ｅｌ素子の製造方法 |
| US8038496B2 (en) | 2004-03-26 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device and using an electrode layer as a mask during manufacturing |
| US8372668B2 (en) | 2009-03-26 | 2013-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| JP2013101790A (ja) * | 2011-11-08 | 2013-05-23 | Nippon Electric Glass Co Ltd | 透明導電性酸化物膜付基板の製造方法 |
| US8536611B2 (en) | 2008-06-17 | 2013-09-17 | Hitachi, Ltd. | Organic light-emitting element, method for manufacturing the organic light-emitting element, apparatus for manufacturing the organic light-emitting element, and organic light-emitting device using the organic light-emitting element |
| US8890204B2 (en) | 2005-03-22 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2015167138A (ja) * | 2002-01-25 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2016537772A (ja) * | 2013-11-13 | 2016-12-01 | 深▲セン▼市華星光電技術有限公司 | 有機ｅｌ部品の製造方法及び製造された有機ｅｌ部品 |
| JP2018139224A (ja) * | 2005-10-17 | 2018-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2020074332A (ja) * | 2014-04-25 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2022132459A (ja) * | 2004-03-16 | 2022-09-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03259264A (ja) * | 1990-03-09 | 1991-11-19 | Fuji Electric Co Ltd | 電子写真用感光体の製造方法 |
| JPH07126764A (ja) * | 1993-11-05 | 1995-05-16 | Nisshin Steel Co Ltd | 金属屑等の脱水方法およびその装置 |
| JP2001033745A (ja) * | 1999-07-16 | 2001-02-09 | Matsushita Electric Ind Co Ltd | 液晶表示装置の製造方法 |
| JP2002056981A (ja) * | 1999-12-20 | 2002-02-22 | Matsushita Electric Ind Co Ltd | 薄膜ｅｌ素子 |
| JP2002151252A (ja) * | 2000-11-16 | 2002-05-24 | Stanley Electric Co Ltd | 有機ｅｌ表示装置 |
| JP2002164181A (ja) * | 2000-09-18 | 2002-06-07 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2002175880A (ja) * | 2000-12-08 | 2002-06-21 | Fuji Electric Co Ltd | 色変換フィルタ基板、該色変換フィルタ基板を具備する色変換カラーディスプレイ、およびそれらの製造方法 |
-
2003
- 2003-07-24 JP JP2003279442A patent/JP2004071558A/ja not_active Withdrawn
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03259264A (ja) * | 1990-03-09 | 1991-11-19 | Fuji Electric Co Ltd | 電子写真用感光体の製造方法 |
| JPH07126764A (ja) * | 1993-11-05 | 1995-05-16 | Nisshin Steel Co Ltd | 金属屑等の脱水方法およびその装置 |
| JP2001033745A (ja) * | 1999-07-16 | 2001-02-09 | Matsushita Electric Ind Co Ltd | 液晶表示装置の製造方法 |
| JP2002056981A (ja) * | 1999-12-20 | 2002-02-22 | Matsushita Electric Ind Co Ltd | 薄膜ｅｌ素子 |
| JP2002164181A (ja) * | 2000-09-18 | 2002-06-07 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2002151252A (ja) * | 2000-11-16 | 2002-05-24 | Stanley Electric Co Ltd | 有機ｅｌ表示装置 |
| JP2002175880A (ja) * | 2000-12-08 | 2002-06-21 | Fuji Electric Co Ltd | 色変換フィルタ基板、該色変換フィルタ基板を具備する色変換カラーディスプレイ、およびそれらの製造方法 |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015167138A (ja) * | 2002-01-25 | 2015-09-24 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP7394927B2 (ja) | 2004-03-16 | 2023-12-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2022132459A (ja) * | 2004-03-16 | 2022-09-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2005309400A (ja) * | 2004-03-26 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
| US8038496B2 (en) | 2004-03-26 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light emitting device and using an electrode layer as a mask during manufacturing |
| US8901809B2 (en) | 2004-03-26 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| US8890204B2 (en) | 2005-03-22 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US11171315B2 (en) | 2005-10-17 | 2021-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a structure which prevents a defect due to precision and bending and manufacturing method thereof |
| US11770965B2 (en) | 2005-10-17 | 2023-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2018139224A (ja) * | 2005-10-17 | 2018-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2020031064A (ja) * | 2005-10-17 | 2020-02-27 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US12127466B2 (en) | 2005-10-17 | 2024-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2008270117A (ja) * | 2007-04-25 | 2008-11-06 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置 |
| JP2009245644A (ja) * | 2008-03-28 | 2009-10-22 | Casio Comput Co Ltd | 発光装置の製造装置及び製造方法 |
| US8536611B2 (en) | 2008-06-17 | 2013-09-17 | Hitachi, Ltd. | Organic light-emitting element, method for manufacturing the organic light-emitting element, apparatus for manufacturing the organic light-emitting element, and organic light-emitting device using the organic light-emitting element |
| US8372668B2 (en) | 2009-03-26 | 2013-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011105140A1 (ja) * | 2010-02-24 | 2011-09-01 | コニカミノルタホールディングス株式会社 | フレキシブル有機ｅｌ素子の製造方法 |
| JP2013101790A (ja) * | 2011-11-08 | 2013-05-23 | Nippon Electric Glass Co Ltd | 透明導電性酸化物膜付基板の製造方法 |
| JP2016537772A (ja) * | 2013-11-13 | 2016-12-01 | 深▲セン▼市華星光電技術有限公司 | 有機ｅｌ部品の製造方法及び製造された有機ｅｌ部品 |
| JP2023060330A (ja) * | 2014-04-25 | 2023-04-27 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2021182547A (ja) * | 2014-04-25 | 2021-11-25 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2020074332A (ja) * | 2014-04-25 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 発光装置 |
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