JP2004047992A5 - - Google Patents
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- Publication number
- JP2004047992A5 JP2004047992A5 JP2003171478A JP2003171478A JP2004047992A5 JP 2004047992 A5 JP2004047992 A5 JP 2004047992A5 JP 2003171478 A JP2003171478 A JP 2003171478A JP 2003171478 A JP2003171478 A JP 2003171478A JP 2004047992 A5 JP2004047992 A5 JP 2004047992A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/173195 | 2002-06-17 | ||
| US10/173,195 US6803616B2 (en) | 2002-06-17 | 2002-06-17 | Magnetic memory element having controlled nucleation site in data layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004047992A JP2004047992A (ja) | 2004-02-12 |
| JP2004047992A5 true JP2004047992A5 (enExample) | 2006-08-03 |
| JP4886963B2 JP4886963B2 (ja) | 2012-02-29 |
Family
ID=29717779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003171478A Expired - Fee Related JP4886963B2 (ja) | 2002-06-17 | 2003-06-17 | 磁気メモリ素子 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6803616B2 (enExample) |
| EP (1) | EP1376600B1 (enExample) |
| JP (1) | JP4886963B2 (enExample) |
| KR (1) | KR100972631B1 (enExample) |
| CN (1) | CN100442384C (enExample) |
| DE (1) | DE60301097T2 (enExample) |
| TW (1) | TW200400595A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6927995B2 (en) * | 2001-08-09 | 2005-08-09 | Hewlett-Packard Development Company, L.P. | Multi-bit MRAM device with switching nucleation sites |
| US6803616B2 (en) * | 2002-06-17 | 2004-10-12 | Hewlett-Packard Development Company, L.P. | Magnetic memory element having controlled nucleation site in data layer |
| JP2006135292A (ja) * | 2004-10-08 | 2006-05-25 | Toshiba Corp | 磁気抵抗効果素子 |
| JP4630747B2 (ja) * | 2005-07-15 | 2011-02-09 | 株式会社東芝 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
| JP4594694B2 (ja) * | 2004-10-08 | 2010-12-08 | 株式会社東芝 | 磁気抵抗効果素子 |
| JP4657836B2 (ja) * | 2005-07-12 | 2011-03-23 | Ｎｅｃトーキン株式会社 | インピーダンス素子を用いた磁性薄膜素子 |
| JP2007027415A (ja) * | 2005-07-15 | 2007-02-01 | Toshiba Corp | 磁気記憶装置 |
| US8084835B2 (en) * | 2006-10-20 | 2011-12-27 | Avalanche Technology, Inc. | Non-uniform switching based non-volatile magnetic based memory |
| JP2012244051A (ja) * | 2011-05-23 | 2012-12-10 | Fujitsu Ltd | 磁気抵抗素子及び磁気記憶装置 |
| CN111933789B (zh) * | 2020-08-11 | 2022-07-08 | 兰州大学 | 一种多态存储器、其制备方法和存储方法及人工突触器 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0971423A1 (en) | 1998-07-10 | 2000-01-12 | Interuniversitair Micro-Elektronica Centrum Vzw | Spin-valve structure and method for making same |
| US6072717A (en) | 1998-09-04 | 2000-06-06 | Hewlett Packard | Stabilized magnetic memory cell |
| JP2000195250A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 磁気メモリ装置 |
| US6185143B1 (en) * | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| US6590806B1 (en) | 2000-03-09 | 2003-07-08 | Hewlett-Packard Development Company, L.P. | Multibit magnetic memory element |
| US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
| US6205053B1 (en) * | 2000-06-20 | 2001-03-20 | Hewlett-Packard Company | Magnetically stable magnetoresistive memory element |
| US6538921B2 (en) * | 2000-08-17 | 2003-03-25 | Nve Corporation | Circuit selection of magnetic memory cells and related cell structures |
| JP4458703B2 (ja) * | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
| US6803616B2 (en) * | 2002-06-17 | 2004-10-12 | Hewlett-Packard Development Company, L.P. | Magnetic memory element having controlled nucleation site in data layer |
| US6570783B1 (en) * | 2001-11-15 | 2003-05-27 | Micron Technology, Inc. | Asymmetric MRAM cell and bit design for improving bit yield |
| US6798691B1 (en) * | 2002-03-07 | 2004-09-28 | Silicon Magnetic Systems | Asymmetric dot shape for increasing select-unselect margin in MRAM devices |
-
2002
- 2002-06-17 US US10/173,195 patent/US6803616B2/en not_active Expired - Lifetime
- 2002-12-23 TW TW091137048A patent/TW200400595A/zh unknown
-
2003
- 2003-04-17 CN CNB031231330A patent/CN100442384C/zh not_active Expired - Lifetime
- 2003-05-16 EP EP03253059A patent/EP1376600B1/en not_active Expired - Lifetime
- 2003-05-16 DE DE60301097T patent/DE60301097T2/de not_active Expired - Lifetime
- 2003-06-16 KR KR1020030038615A patent/KR100972631B1/ko not_active Expired - Fee Related
- 2003-06-17 JP JP2003171478A patent/JP4886963B2/ja not_active Expired - Fee Related
- 2003-09-30 US US10/676,414 patent/US6905888B2/en not_active Expired - Lifetime
- 2003-10-30 US US10/697,171 patent/US20040089888A1/en not_active Abandoned