JP2004031394A5 - - Google Patents

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Publication number
JP2004031394A5
JP2004031394A5 JP2002181058A JP2002181058A JP2004031394A5 JP 2004031394 A5 JP2004031394 A5 JP 2004031394A5 JP 2002181058 A JP2002181058 A JP 2002181058A JP 2002181058 A JP2002181058 A JP 2002181058A JP 2004031394 A5 JP2004031394 A5 JP 2004031394A5
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JP
Japan
Prior art keywords
oxide film
film
manufacturing
semiconductor device
forming
Prior art date
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Granted
Application number
JP2002181058A
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English (en)
Japanese (ja)
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JP2004031394A (ja
JP4007864B2 (ja
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Application filed filed Critical
Priority to JP2002181058A priority Critical patent/JP4007864B2/ja
Priority claimed from JP2002181058A external-priority patent/JP4007864B2/ja
Publication of JP2004031394A publication Critical patent/JP2004031394A/ja
Publication of JP2004031394A5 publication Critical patent/JP2004031394A5/ja
Application granted granted Critical
Publication of JP4007864B2 publication Critical patent/JP4007864B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002181058A 2002-06-21 2002-06-21 半導体装置の製造方法 Expired - Fee Related JP4007864B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002181058A JP4007864B2 (ja) 2002-06-21 2002-06-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002181058A JP4007864B2 (ja) 2002-06-21 2002-06-21 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004031394A JP2004031394A (ja) 2004-01-29
JP2004031394A5 true JP2004031394A5 (ko) 2005-10-13
JP4007864B2 JP4007864B2 (ja) 2007-11-14

Family

ID=31177991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002181058A Expired - Fee Related JP4007864B2 (ja) 2002-06-21 2002-06-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4007864B2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159316A (ja) * 2003-10-30 2005-06-16 Tokyo Electron Ltd 半導体装置の製造方法及び成膜装置並びに記憶媒体
JP2005236083A (ja) * 2004-02-20 2005-09-02 Toshiba Corp 半導体装置の製造方法
JP4966490B2 (ja) * 2004-11-15 2012-07-04 富士通セミコンダクター株式会社 半導体装置の製造方法
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
WO2012165263A1 (ja) * 2011-06-03 2012-12-06 東京エレクトロン株式会社 ゲート絶縁膜の形成方法およびゲート絶縁膜の形成装置
JP6218062B2 (ja) * 2012-08-24 2017-10-25 学校法人早稲田大学 電力素子、電力制御機器、電力素子の製造方法

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