JP2004031394A5 - - Google Patents
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- Publication number
- JP2004031394A5 JP2004031394A5 JP2002181058A JP2002181058A JP2004031394A5 JP 2004031394 A5 JP2004031394 A5 JP 2004031394A5 JP 2002181058 A JP2002181058 A JP 2002181058A JP 2002181058 A JP2002181058 A JP 2002181058A JP 2004031394 A5 JP2004031394 A5 JP 2004031394A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- manufacturing
- semiconductor device
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002181058A JP4007864B2 (ja) | 2002-06-21 | 2002-06-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002181058A JP4007864B2 (ja) | 2002-06-21 | 2002-06-21 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004031394A JP2004031394A (ja) | 2004-01-29 |
JP2004031394A5 true JP2004031394A5 (ko) | 2005-10-13 |
JP4007864B2 JP4007864B2 (ja) | 2007-11-14 |
Family
ID=31177991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002181058A Expired - Fee Related JP4007864B2 (ja) | 2002-06-21 | 2002-06-21 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4007864B2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005159316A (ja) * | 2003-10-30 | 2005-06-16 | Tokyo Electron Ltd | 半導体装置の製造方法及び成膜装置並びに記憶媒体 |
JP2005236083A (ja) * | 2004-02-20 | 2005-09-02 | Toshiba Corp | 半導体装置の製造方法 |
JP4966490B2 (ja) * | 2004-11-15 | 2012-07-04 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US20070065578A1 (en) * | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
WO2012165263A1 (ja) * | 2011-06-03 | 2012-12-06 | 東京エレクトロン株式会社 | ゲート絶縁膜の形成方法およびゲート絶縁膜の形成装置 |
JP6218062B2 (ja) * | 2012-08-24 | 2017-10-25 | 学校法人早稲田大学 | 電力素子、電力制御機器、電力素子の製造方法 |
-
2002
- 2002-06-21 JP JP2002181058A patent/JP4007864B2/ja not_active Expired - Fee Related
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