JP2003524921A5 - - Google Patents

Download PDF

Info

Publication number
JP2003524921A5
JP2003524921A5 JP2000580303A JP2000580303A JP2003524921A5 JP 2003524921 A5 JP2003524921 A5 JP 2003524921A5 JP 2000580303 A JP2000580303 A JP 2000580303A JP 2000580303 A JP2000580303 A JP 2000580303A JP 2003524921 A5 JP2003524921 A5 JP 2003524921A5
Authority
JP
Japan
Prior art keywords
current
gate
voltage
slew rate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000580303A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003524921A (ja
JP4490586B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from US09/430,744 external-priority patent/US6400106B1/en
Publication of JP2003524921A publication Critical patent/JP2003524921A/ja
Publication of JP2003524921A5 publication Critical patent/JP2003524921A5/ja
Application granted granted Critical
Publication of JP4490586B2 publication Critical patent/JP4490586B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000580303A 1998-10-30 1999-10-29 電圧及び電流のスルーイングにより回路の電磁放射を減少させる装置 Expired - Fee Related JP4490586B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US10634698P 1998-10-30 1998-10-30
US10634598P 1998-10-30 1998-10-30
US60/106,346 1998-10-30
US60/106,345 1998-10-30
US09/430,744 US6400106B1 (en) 1998-10-30 1999-10-29 Device for reducing electromagnetic emissions of a circuit through voltage and current slewing
PCT/US1999/025545 WO2000027032A1 (en) 1998-10-30 1999-10-29 Combined voltage and current slew rate limiting
US09/430,744 1999-10-29

Publications (3)

Publication Number Publication Date
JP2003524921A JP2003524921A (ja) 2003-08-19
JP2003524921A5 true JP2003524921A5 (https=) 2010-01-21
JP4490586B2 JP4490586B2 (ja) 2010-06-30

Family

ID=27380092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000580303A Expired - Fee Related JP4490586B2 (ja) 1998-10-30 1999-10-29 電圧及び電流のスルーイングにより回路の電磁放射を減少させる装置

Country Status (7)

Country Link
US (1) US6400106B1 (https=)
EP (1) EP1127409B1 (https=)
JP (1) JP4490586B2 (https=)
KR (1) KR20010080308A (https=)
CN (1) CN1325563A (https=)
AU (1) AU1459700A (https=)
WO (1) WO2000027032A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1180842B1 (en) * 2000-08-07 2004-04-14 Denso Corporation Voltage regulator of vehicle AC generator
DE10061563B4 (de) 2000-12-06 2005-12-08 RUBITEC Gesellschaft für Innovation und Technologie der Ruhr-Universität Bochum mbH Verfahren und Vorrichtung zum Ein- und Ausschalten von Leistungshalbleitern, insbesondere für ein drehzahlvariables Betreiben einer Asynchronmaschine, ein Betreiben einer Zündschaltung für Ottomotoren, sowie Schaltnetzteil
DE10137752C1 (de) * 2001-08-01 2002-12-12 Siemens Ag Vorrichtung zur Ansteuerung eines Schaltelements und zugehöriges Betriebsverfahren
CN1602587B (zh) 2001-11-12 2010-05-26 因芬尼昂技术股份公司 集成电路切换过程期间避免瞬变的方法及集成电路
DE10217611B4 (de) * 2002-04-19 2005-06-30 Infineon Technologies Ag Verfahren und Vorrichtung zur EMV-optimierten Ansteuerung eines Halbleiterschaltelements
JP3798378B2 (ja) * 2003-03-10 2006-07-19 三菱電機株式会社 誘導性負荷の電流制御装置
JP4502177B2 (ja) 2003-10-14 2010-07-14 ルネサスエレクトロニクス株式会社 出力回路
JP4229804B2 (ja) 2003-10-24 2009-02-25 Ｎｅｃエレクトロニクス株式会社 半導体出力回路
JP3942583B2 (ja) 2003-11-21 2007-07-11 松下電器産業株式会社 ドライバ回路
EP1751862B1 (en) * 2004-04-26 2014-07-23 LeTourneau Technologies Drilling Systems, Inc. Adaptive gate drive for switching devices of inverter
US7667524B2 (en) * 2004-11-05 2010-02-23 International Rectifier Corporation Driver circuit and method with reduced DI/DT and having delay compensation
US7479770B2 (en) * 2005-04-28 2009-01-20 Texas Instruments Incorporated System and method for driving a power field-effect transistor (FET)
DE102005034365B3 (de) * 2005-07-22 2006-11-23 Infineon Technologies Ag Schaltungsanordnung mit einem Leistungs-MOS-Transistor und einer Ansteuerschaltung
US7511390B1 (en) 2005-07-29 2009-03-31 Linear Technology Corporation Dual FET output stage with controlled output DV/DT for reduced EMI and input supply noise
EP1755221B1 (en) 2005-08-17 2009-12-09 Infineon Technologies AG Method and driver circuit for controlling a power MOS transistor
GB2433358A (en) * 2005-12-13 2007-06-20 Bombardier Transp Gmbh Operating electronic valves having an insulated gate
US7365584B2 (en) * 2006-06-02 2008-04-29 Freescale Semiconductor, Inc. Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback
DE602006003564D1 (de) 2006-07-05 2008-12-18 Infineon Technologies Ag MOS-Transistorschaltung mit gesteuerter Anstiegszeit
JP4609401B2 (ja) * 2006-09-20 2011-01-12 株式会社デンソー 電磁弁駆動装置
JP6317994B2 (ja) * 2014-05-08 2018-04-25 日立オートモティブシステムズ株式会社 誘導負荷駆動回路
JP2016076750A (ja) * 2014-10-02 2016-05-12 株式会社オートネットワーク技術研究所 電流制御装置
DE102015221636A1 (de) * 2015-11-04 2017-05-04 Robert Bosch Gmbh Verfahren zum Betreiben eines Metall-Oxid-Halbleiter-Feldeffekttransistors
JP7799982B2 (ja) * 2021-01-29 2026-01-16 マツダ株式会社 負荷駆動制御装置
EP4554094A1 (fr) * 2023-11-09 2025-05-14 STMicroelectronics International N.V. Puce electronique connectee a une tension externe

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4274042A (en) * 1979-04-24 1981-06-16 General Electric Company AC Motor drive system having clamped command error signal
FR2671241B1 (fr) * 1990-12-27 1997-04-30 Peugeot Circuit de commande d'un transistor de puissance utilise en commutation forcee.
US5397967A (en) * 1992-06-30 1995-03-14 Sgs-Thomson Microelectronics, Inc. Slew rate circuit for high side driver for a polyphase DC motor
WO1995024076A1 (en) 1994-03-01 1995-09-08 Apple Computer, Inc. Slew-rate controlled power switching circuit
US6127746A (en) 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
US5949249A (en) * 1997-04-10 1999-09-07 International Business Machines Corporation Driver having inductance-controlled current slew rate
US5952817A (en) * 1997-04-24 1999-09-14 Linear Technology Corporation Apparatus and method using waveform shaping for reducing high frequency noise from switching inductive loads
US6040686A (en) * 1999-01-07 2000-03-21 Linear Technology Corporation Low noise step-down switching regulator circuits with programmable slew rate limiter and methods of use

Similar Documents

Publication Publication Date Title
JP2003524921A5 (https=)
JP4490586B2 (ja) 電圧及び電流のスルーイングにより回路の電磁放射を減少させる装置
US11539294B2 (en) Multi-level power converter with light load flying capacitor voltage regulation
US10892747B2 (en) Circuits, methods and systems for setting a current level to be used by a current-mode gate driver
US7777437B2 (en) Switching control system and motor driving system
TWI631821B (zh) 電感性負載驅動器扭轉率控制器
US9601999B2 (en) Dynamic switch scaling for switched-mode power converters
US8994438B2 (en) Circuit arrangement for switching a current, and method for operating a semiconductor circuit breaker
TWI629867B (zh) 流經低側場效電晶體之電流的感測系統及方法
US20160072393A1 (en) Bidirectional current-sense circuit
JP7268507B2 (ja) ゲート駆動装置及び電力変換装置
EP4102720A1 (en) Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on
CN108377141B (zh) 切换速率监测与控制
EP4042559A1 (en) Improved current sensing and regulation for stepper motor driver
US11444613B1 (en) Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on
US20190245440A1 (en) Dc-dc converters
JP6964705B2 (ja) 電力変換装置
CN114902546A (zh) 缓冲电路
EP2704166A1 (en) Adaptive current control for inductive loads
JPWO2020095351A1 (ja) ゲート駆動回路および電力変換装置