JP2003508921A5 - - Google Patents

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Publication number
JP2003508921A5
JP2003508921A5 JP2001520477A JP2001520477A JP2003508921A5 JP 2003508921 A5 JP2003508921 A5 JP 2003508921A5 JP 2001520477 A JP2001520477 A JP 2001520477A JP 2001520477 A JP2001520477 A JP 2001520477A JP 2003508921 A5 JP2003508921 A5 JP 2003508921A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001520477A
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Japanese (ja)
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JP2003508921A (ja
JP4969748B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2000/023504 external-priority patent/WO2001017031A1/en
Publication of JP2003508921A publication Critical patent/JP2003508921A/ja
Publication of JP2003508921A5 publication Critical patent/JP2003508921A5/ja
Application granted granted Critical
Publication of JP4969748B2 publication Critical patent/JP4969748B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001520477A 1999-08-27 2000-08-25 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法 Expired - Fee Related JP4969748B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38448099A 1999-08-27 1999-08-27
US09/384,480 1999-08-27
PCT/US2000/023504 WO2001017031A1 (en) 1999-08-27 2000-08-25 Easy shrinkable novel non-volatile semiconductor memory cell utilizing split dielectric floating gate and method for making same

Publications (3)

Publication Number Publication Date
JP2003508921A JP2003508921A (ja) 2003-03-04
JP2003508921A5 true JP2003508921A5 (zh) 2011-08-18
JP4969748B2 JP4969748B2 (ja) 2012-07-04

Family

ID=23517472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001520477A Expired - Fee Related JP4969748B2 (ja) 1999-08-27 2000-08-25 不揮発性半導体記憶装置デバイス及び不揮発性記憶装置セルの製造方法

Country Status (4)

Country Link
JP (1) JP4969748B2 (zh)
CN (1) CN1229873C (zh)
AU (1) AU6940900A (zh)
WO (1) WO2001017031A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
JP4608815B2 (ja) * 2001-06-08 2011-01-12 ソニー株式会社 不揮発性半導体記憶装置の製造方法
JP4393106B2 (ja) * 2003-05-14 2010-01-06 シャープ株式会社 表示用駆動装置及び表示装置、並びに携帯電子機器
US7312495B2 (en) 2005-04-07 2007-12-25 Spansion Llc Split gate multi-bit memory cell
CN100411144C (zh) * 2005-08-16 2008-08-13 力晶半导体股份有限公司 非挥发性存储器及其制造方法
JP2008053270A (ja) * 2006-08-22 2008-03-06 Nec Electronics Corp 半導体記憶装置、及びその製造方法
KR100843550B1 (ko) * 2006-11-06 2008-07-04 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조방법
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145080A (ja) * 1991-11-25 1993-06-11 Kawasaki Steel Corp 不揮発性記憶装置
JPH05251669A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 半導体記憶装置およびその書き換え方法
EP0571692B1 (en) * 1992-05-27 1998-07-22 STMicroelectronics S.r.l. EPROM cell with a readily scalable down interpoly dielectric
JPH07169864A (ja) * 1993-12-16 1995-07-04 Kawasaki Steel Corp 不揮発性半導体記憶装置
US5619052A (en) * 1994-09-29 1997-04-08 Macronix International Co., Ltd. Interpoly dielectric structure in EEPROM device
US5783849A (en) * 1996-02-23 1998-07-21 Citizen Watch Co., Ltd. Semiconductor device
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US5969383A (en) * 1997-06-16 1999-10-19 Motorola, Inc. Split-gate memory device and method for accessing the same
US5879993A (en) * 1997-09-29 1999-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride spacer technology for flash EPROM
US6020606A (en) * 1998-03-20 2000-02-01 United Silicon Incorporated Structure of a memory cell
JP3973819B2 (ja) * 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法
US6255166B1 (en) * 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array

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