JP2003506899A - バッチ製造環境でラン・トゥ・ラン制御を行なうための方法および装置 - Google Patents

バッチ製造環境でラン・トゥ・ラン制御を行なうための方法および装置

Info

Publication number
JP2003506899A
JP2003506899A JP2001516239A JP2001516239A JP2003506899A JP 2003506899 A JP2003506899 A JP 2003506899A JP 2001516239 A JP2001516239 A JP 2001516239A JP 2001516239 A JP2001516239 A JP 2001516239A JP 2003506899 A JP2003506899 A JP 2003506899A
Authority
JP
Japan
Prior art keywords
control input
lot
control
data
input parameters
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001516239A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003506899A5 (enExample
Inventor
トプラック，アンソニー・ジェイ
キャンベル，ウィリアム・ジェイ
ボード，クリストファー・エイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2003506899A publication Critical patent/JP2003506899A/ja
Publication of JP2003506899A5 publication Critical patent/JP2003506899A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • General Factory Administration (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001516239A 1999-08-10 2000-04-18 バッチ製造環境でラン・トゥ・ラン制御を行なうための方法および装置 Pending JP2003506899A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/371,665 1999-08-10
US09/371,665 US6607926B1 (en) 1999-08-10 1999-08-10 Method and apparatus for performing run-to-run control in a batch manufacturing environment
PCT/US2000/010365 WO2001011679A1 (en) 1999-08-10 2000-04-18 Method and apparatus for performing run-to-run control in a batch manufacturing environment

Publications (2)

Publication Number Publication Date
JP2003506899A true JP2003506899A (ja) 2003-02-18
JP2003506899A5 JP2003506899A5 (enExample) 2007-04-19

Family

ID=23464910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001516239A Pending JP2003506899A (ja) 1999-08-10 2000-04-18 バッチ製造環境でラン・トゥ・ラン制御を行なうための方法および装置

Country Status (5)

Country Link
US (1) US6607926B1 (enExample)
EP (1) EP1218933A1 (enExample)
JP (1) JP2003506899A (enExample)
KR (1) KR100950570B1 (enExample)
WO (1) WO2001011679A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057103A (ja) * 2000-08-07 2002-02-22 Samsung Electronics Co Ltd 半導体装置の製造のための露光方法

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US6449524B1 (en) * 2000-01-04 2002-09-10 Advanced Micro Devices, Inc. Method and apparatus for using equipment state data for run-to-run control of manufacturing tools
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US7201936B2 (en) 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US6913938B2 (en) 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US7101799B2 (en) 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7082345B2 (en) 2001-06-19 2006-07-25 Applied Materials, Inc. Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
US7047099B2 (en) 2001-06-19 2006-05-16 Applied Materials Inc. Integrating tool, module, and fab level control
US7698012B2 (en) * 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7337019B2 (en) 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US6984198B2 (en) 2001-08-14 2006-01-10 Applied Materials, Inc. Experiment management system, method and medium
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
JP2003324055A (ja) * 2002-04-30 2003-11-14 Canon Inc 管理システム及び装置及び方法並びに露光装置及びその制御方法
US7069104B2 (en) * 2002-04-30 2006-06-27 Canon Kabushiki Kaisha Management system, management apparatus, management method, and device manufacturing method
JP4018438B2 (ja) 2002-04-30 2007-12-05 キヤノン株式会社 半導体露光装置を管理する管理システム
JP4353498B2 (ja) * 2002-04-30 2009-10-28 キヤノン株式会社 管理装置及び方法、デバイス製造方法、並びにコンピュータプログラム
US6999836B2 (en) 2002-08-01 2006-02-14 Applied Materials, Inc. Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
AU2003290932A1 (en) 2002-11-15 2004-06-15 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7095893B2 (en) * 2003-01-06 2006-08-22 Banner Engineering Corporation System and method for determining an image decimation range for use in a machine vision system
US7333871B2 (en) 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
US7010374B2 (en) * 2003-03-04 2006-03-07 Hitachi High-Technologies Corporation Method for controlling semiconductor processing apparatus
US6766214B1 (en) * 2003-04-03 2004-07-20 Advanced Micro Devices, Inc. Adjusting a sampling rate based on state estimation results
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US7354332B2 (en) 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7356377B2 (en) 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
US6980873B2 (en) 2004-04-23 2005-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment
US7437404B2 (en) * 2004-05-20 2008-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving equipment communication in semiconductor manufacturing equipment
US7096085B2 (en) 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
DE102005009026B4 (de) * 2005-02-28 2011-04-07 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Betreiben einer fortschrittlichen Prozesssteuerung durch dynamisches Anpassen von Hierarchieebenen
JP4839101B2 (ja) * 2006-03-08 2011-12-21 東京エレクトロン株式会社 基板処理装置、基板処理条件検討方法及び記憶媒体
US20070239305A1 (en) * 2006-03-28 2007-10-11 Haoren Zhuang Process control systems and methods
US7532024B2 (en) * 2006-07-05 2009-05-12 Optimaltest Ltd. Methods and systems for semiconductor testing using reference dice
US7809459B2 (en) 2007-12-31 2010-10-05 Hitachi Global Technologies Netherlands B.V. Advanced-process-control system utilizing a lambda tuner
US10203596B2 (en) * 2016-01-06 2019-02-12 United Microelectronics Corp. Method of filtering overlay data by field
US11018064B2 (en) * 2018-12-12 2021-05-25 Kla Corporation Multiple-tool parameter set configuration and misregistration measurement system and method
DE102020211992A1 (de) * 2020-09-24 2022-03-24 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zum Verarbeiten von mit einem Simulationsmodell für wenigstens einen Aspekt eines technischen Systems assoziierten Daten
CN116053165A (zh) * 2023-01-09 2023-05-02 长鑫存储技术有限公司 一种半导体加工的防御控制方法、系统、设备及存储介质

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63249328A (ja) * 1987-04-03 1988-10-17 Mitsubishi Electric Corp 物品の製造システム及び物品の製造方法
JPH02170515A (ja) * 1988-12-23 1990-07-02 Canon Inc 半導体製造装置及び方法
JPH09186151A (ja) * 1995-12-27 1997-07-15 Samsung Electron Co Ltd 半導体素子の酸化装置及びこれを用いた酸化膜形成方法
JPH09246151A (ja) * 1996-03-06 1997-09-19 Nec Corp 半導体装置の製造方法
JPH1116826A (ja) * 1997-06-20 1999-01-22 Canon Inc 位置合わせ方法および装置
JPH1116805A (ja) * 1997-06-20 1999-01-22 Sony Corp 半導体装置の製造工程のフィードバック方法
JPH11186132A (ja) * 1997-12-19 1999-07-09 Sony Corp 半導体装置の製造工程のフィードバック方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5741732A (en) 1995-05-03 1998-04-21 Sony Corporation Method for detecting implantation mask misalignment
US5866437A (en) 1997-12-05 1999-02-02 Advanced Micro Devices, Inc. Dynamic process window control using simulated wet data from current and previous layer data

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63249328A (ja) * 1987-04-03 1988-10-17 Mitsubishi Electric Corp 物品の製造システム及び物品の製造方法
JPH02170515A (ja) * 1988-12-23 1990-07-02 Canon Inc 半導体製造装置及び方法
JPH09186151A (ja) * 1995-12-27 1997-07-15 Samsung Electron Co Ltd 半導体素子の酸化装置及びこれを用いた酸化膜形成方法
JPH09246151A (ja) * 1996-03-06 1997-09-19 Nec Corp 半導体装置の製造方法
JPH1116826A (ja) * 1997-06-20 1999-01-22 Canon Inc 位置合わせ方法および装置
JPH1116805A (ja) * 1997-06-20 1999-01-22 Sony Corp 半導体装置の製造工程のフィードバック方法
JPH11186132A (ja) * 1997-12-19 1999-07-09 Sony Corp 半導体装置の製造工程のフィードバック方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057103A (ja) * 2000-08-07 2002-02-22 Samsung Electronics Co Ltd 半導体装置の製造のための露光方法

Also Published As

Publication number Publication date
WO2001011679A1 (en) 2001-02-15
KR20020020965A (ko) 2002-03-16
KR100950570B1 (ko) 2010-04-01
US6607926B1 (en) 2003-08-19
EP1218933A1 (en) 2002-07-03

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