JP2003324080A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP2003324080A JP2003324080A JP2002128659A JP2002128659A JP2003324080A JP 2003324080 A JP2003324080 A JP 2003324080A JP 2002128659 A JP2002128659 A JP 2002128659A JP 2002128659 A JP2002128659 A JP 2002128659A JP 2003324080 A JP2003324080 A JP 2003324080A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- film
- semiconductor wafer
- wafer
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置の製造方
法に係り、特に接着フィルムを用いて半導体チップをチ
ップ搭載用の基板にダイボンドする工程を有する半導体
装置の製造方法に係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device having a step of die-bonding a semiconductor chip to a chip mounting substrate using an adhesive film.
【０００２】[0002]
【従来の技術】従来、半導体チップをチップ搭載用の基
板にダイボンドする工程は、基板の所定位置に液状の接
着剤を塗布し、その上に半導体チップを載置して行われ
ている。別のダイボンドの方法としては、半導体ウエハ
をチップ化（個片化）する際に使用するダイシングシー
トとして、半導体ウエハを固定する粘着剤層がダイボン
ド用の接着剤の機能を兼ね備える粘接着シートを用い、
ピックアップ時に接着剤層をチップ裏面に残着させた状
態で粘接着シートの基材から剥離し、該チップを接着剤
層を介して基板上に加熱圧着する方法が種々提案されて
いる（特開平２−３２１８１号公報、特開平８−５３６
５５号公報、特開平８−２３９６３６号公報、特開平９
−１００４５０号公報、特開平９−２０２８７２号公
報、特開平９−６７５５８号公報等参照）。2. Description of the Related Art Conventionally, the step of die-bonding a semiconductor chip to a chip mounting substrate has been performed by applying a liquid adhesive at a predetermined position on the substrate and mounting the semiconductor chip thereon. As another method of die bonding, as a dicing sheet used when the semiconductor wafer is made into chips (individualization), a pressure-sensitive adhesive sheet having an adhesive layer for fixing the semiconductor wafer also functions as an adhesive for die bonding is used. Used,
Various methods have been proposed for peeling the adhesive layer from the base material of the tacky adhesive sheet with the adhesive layer left on the back surface of the chip at the time of pickup and thermocompressing the chip on the substrate via the adhesive layer (special feature. Japanese Laid-Open Patent Application No. 2-32181 and Japanese Patent Laid-Open No. 8-536.
55, JP 8-239636 A, JP 9
-100450, JP-A-9-202872, JP-A-9-67558, etc.).
【０００３】[0003]
【発明の解決しようとする課題】ところが、液状の接着
剤を基板に塗布する場合は接着剤を適量に制御すること
が困難で、広面積のチップや極小のチップあるいは縦横
の比が大きなチップでは、接着剤の不足やはみ出しが起
こる虞があった。また、ダイシング工程を兼用する粘接
着シートでダイボンドを行う場合は、ダイシング時に粘
接着シートがチップ飛びを抑える機能（チップ固定機
能）、粘接着層が粘接着シートの基材から剥離する機能
（剥離性）、さらにダイボンド後に粘接着剤がチップと
基板を接着する機能（ダイボンド性）がそれぞれ相反す
る性質となる場合が多いため、最適な組成の選択が困難
となる虞があった。However, when a liquid adhesive is applied to a substrate, it is difficult to control the adhesive in an appropriate amount, and a wide area chip, a very small chip, or a chip with a large aspect ratio is used. However, there was a risk that the adhesive would run short and the adhesive would stick out. When die-bonding is performed with a tacky adhesive sheet that also serves as the dicing process, the tacky adhesive sheet has a function of suppressing chip jump (chip fixing function), and the tacky adhesive layer peels from the base material of the tacky adhesive sheet. In many cases, the function to perform (peelability) and the function to adhere the chip and the substrate after die-bonding (die-bonding property) are in conflict with each other, which may make it difficult to select the optimum composition. It was
【０００４】本発明は、上記のような問題を鑑み、ダイ
ボンド用の接着剤として最適な接着シートを用いて、簡
便な方法でコストパフォーマンスに優れた半導体装置の
製造方法を提供することを目的としている。また、本発
明を他の側面からみれば、ダイボンド用接着剤の材料マ
ージンを広くし、コストの低減に寄与しうる半導体装置
の製造方法を提供することを目的としている。In view of the above problems, it is an object of the present invention to provide a semiconductor device manufacturing method excellent in cost performance by a simple method using an optimum adhesive sheet as an adhesive agent for die bonding. There is. Another aspect of the present invention is to provide a method for manufacturing a semiconductor device, which can widen the material margin of the die-bonding adhesive and contribute to cost reduction.
【０００５】[0005]
【課題を解決するための手段】本発明に係る半導体装置
の製造方法は、半導体ウエハの回路面に保護用粘着テー
プを貼付し、ダイボンド用の接着フィルムを前記半導体
ウエハの裏面に対して接着積層し、前記保護用粘着テー
プ上に半導体ウエハを支持した状態で、前記接着フィル
ムの側よりダイシングを行い、前記接着フィルムととも
に半導体ウエハをチップ化し、前記保護用粘着シートか
ら半導体チップをピックアップして、前記接着フィルム
によってチップ搭載用基板にダイボンドすることを特徴
としている。According to the method of manufacturing a semiconductor device of the present invention, a protective adhesive tape is attached to the circuit surface of a semiconductor wafer, and an adhesive film for die bonding is adhesively laminated on the back surface of the semiconductor wafer. Then, in a state where the semiconductor wafer is supported on the protective adhesive tape, dicing is performed from the side of the adhesive film, the semiconductor wafer is chipped together with the adhesive film, and the semiconductor chip is picked up from the protective adhesive sheet, It is characterized in that it is die-bonded to a chip mounting substrate by the adhesive film.
【０００６】本発明においては、前記半導体ウエハの回
路面に保護用粘着テープを貼付した後、前記半導体ウエ
ハの裏面側の研磨を行って所定の厚さに加工し、その
後、前記ダイボンド用の接着フィルムを前記半導体ウエ
ハの研磨面に接着積層してダイシング工程を行っても良
い。In the present invention, after a protective adhesive tape is attached to the circuit surface of the semiconductor wafer, the back surface of the semiconductor wafer is polished to a predetermined thickness, and then the bonding for die bonding is performed. The film may be adhesively laminated on the polished surface of the semiconductor wafer to perform the dicing step.
【０００７】また、前記接着フィルムは、長尺の工程フ
ィルム上に剥離可能に積層され、該工程フィルム上で半
導体ウエハと略同サイズに抜き加工が施されてなるもの
であることが好ましい。このような本発明によれば、ダ
イボンド用接着フィルムには、チップ固定機能や剥離性
は要求されないので、ダイボンド性に重点をおいて材料
選択ができる。このため、接着フィルムの材料マージン
が広がり、コストの削減に寄与しうる。Further, it is preferable that the adhesive film is releasably laminated on a long process film, and is punched on the process film to have substantially the same size as a semiconductor wafer. According to the present invention as described above, since the die-bonding adhesive film is not required to have the chip fixing function or the peeling property, the material can be selected with an emphasis on the die-bonding property. Therefore, the material margin of the adhesive film is widened, which can contribute to cost reduction.
【０００８】[0008]
【発明の実施の形態】以下、本発明に係る半導体ウエハ
の製造方法について、具体的に説明する。本発明におい
ては、まず図１に示すように、半導体ウエハ１の回路面
に保護用粘着テープ２を貼付する。ウエハ表面への回路
の形成は、エッチング法、リフトオフ法などの汎用の手
段により行われる。また、回路形成後に、回路面に保護
用粘着テープ２を貼付し、ウエハ裏面を研削し、所定の
厚みに調整してもよい。ここで、所定の厚みとは特に限
定はされないが、一般的には５０〜５００μｍ程度であ
る。BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a semiconductor wafer according to the present invention will be specifically described below. In the present invention, first, as shown in FIG. 1, a protective adhesive tape 2 is attached to the circuit surface of a semiconductor wafer 1. The circuit is formed on the wafer surface by a general-purpose means such as an etching method or a lift-off method. In addition, after forming the circuit, the protective adhesive tape 2 may be attached to the circuit surface and the back surface of the wafer may be ground to adjust the thickness to a predetermined value. Here, the predetermined thickness is not particularly limited, but is generally about 50 to 500 μm.
【０００９】保護用粘着テープ２としては、従来より半
導体ウエハの加工に用いられてきた種々の粘着テープが
用いられ得る。本発明においては、特に、所定の工程終
了後に、半導体チップを保護用粘着テープ２の粘着剤層
２１から剥離する必要があるため、粘着剤層２１は、い
わゆる再剥離型の弱粘着剤からなるか、またはエネルギ
ー線照射により粘着力を低減できるエネルギー線硬化型
粘着剤からなることが好ましい。As the protective adhesive tape 2, various adhesive tapes conventionally used for processing semiconductor wafers can be used. In the present invention, since it is necessary to peel the semiconductor chip from the pressure-sensitive adhesive layer 21 of the protective pressure-sensitive adhesive tape 2 after the completion of a predetermined process, the pressure-sensitive adhesive layer 21 is made of a so-called re-peeling type weak pressure-sensitive adhesive. Alternatively, it is preferably composed of an energy ray-curable pressure-sensitive adhesive capable of reducing the adhesive force by irradiation with energy rays.
【００１０】弱粘着剤としては、アクリル系、ポリエス
テル系、天然ゴム系等従来公知の粘着剤が特に制限され
ることなく用いられる。これらの内でも、アクリル系粘
着剤が好ましく、特にアクリル酸エステルを主たる構成
単位とするアクリル系粘着剤が好ましい。このような弱
粘着剤の粘着力は、１００〜５０００ｍＮ／25mm、好ま
しくは２００〜２０００ｍＮ／25mm程度であり、ウエハ
（チップ）の加工中にはウエハ（チップ）を十分に固定
でき、また所要の工程終了後には、容易にチップをピッ
クアップできる。As the weak pressure-sensitive adhesive, conventionally known pressure-sensitive adhesives such as acrylic type, polyester type and natural rubber type are used without particular limitation. Among these, acrylic pressure-sensitive adhesives are preferable, and acrylic pressure-sensitive adhesives containing acrylic acid ester as a main constituent unit are particularly preferable. The adhesive force of such a weak adhesive is about 100 to 5000 mN / 25 mm, preferably about 200 to 2000 mN / 25 mm, and the wafer (chip) can be sufficiently fixed during processing of the wafer (chip), After the process, the chips can be picked up easily.
【００１１】また、エネルギー線硬化型粘着剤として
は、たとえば特開昭６０−１９６，９５６号公報、特開
昭６０−２２３，１３９号公報、特開平５−３２９４６
号公報、特開平８−２７２３９号公報等に記載のものが
特に制限されることなく用いられる。このようなエネル
ギー線硬化型粘着剤は、エネルギー線照射前にはウエハ
（チップ）に対して充分な接着力を有し、エネルギー線
照射後には接着力が著しく減少する。すなわち、エネル
ギー線照射前には、ウエハ（チップ）を充分な接着力で
保持するが、エネルギー線照射後には、得られたチップ
を容易に剥離することができる。このようなエネルギー
線硬化型粘着剤の硬化後の好ましい粘着力は１０〜１０
００ｍＮ／25mmであり、さらに好ましくは５０〜５００
ｍＮ／25mm程度である。As the energy ray-curable pressure-sensitive adhesive, for example, JP-A-60-196,956, JP-A-60-223,139, and JP-A-5-32946.
The materials described in JP-A No. 8-27239 and JP-A No. 8-27239 can be used without particular limitation. Such an energy ray-curable pressure-sensitive adhesive has a sufficient adhesive force to the wafer (chip) before the energy ray irradiation, and the adhesive force is significantly reduced after the energy ray irradiation. That is, the wafer (chip) is held with a sufficient adhesive force before the energy ray irradiation, but the obtained chip can be easily peeled off after the energy ray irradiation. A preferable adhesive force after curing of such an energy ray-curable pressure-sensitive adhesive is 10 to 10.
00mN / 25mm, more preferably 50-500
It is about mN / 25 mm.
【００１２】粘着剤層２１の厚さは特に限定はされない
が、好ましくは３〜１００μｍ、特に好ましくは５〜５
０μｍである。保護用粘着テープ２の基材２２として
は、従来より各種の粘着テープの基材に用いられてきた
種々の合成樹脂フィルムが特に制限されることなく用い
られる。このような合成樹脂フィルムとしては、たとえ
ばポリエチレン、ポリプロピレン、ポリメチルペンテン
等のポリオレフィン、ポリ塩化ビニル、ポリエステル、
ポリウレタン等が好ましく用いられる。基材２２として
は、これらの合成樹脂フィルムの単層からなっていても
よいし、複層からなる積層体であってもよい。The thickness of the adhesive layer 21 is not particularly limited, but is preferably 3 to 100 μm, particularly preferably 5 to 5.
It is 0 μm. As the base material 22 of the protective pressure-sensitive adhesive tape 2, various synthetic resin films which have been conventionally used as the base material of various pressure-sensitive adhesive tapes are used without particular limitation. Examples of such synthetic resin film include polyethylene, polypropylene, polyolefin such as polymethylpentene, polyvinyl chloride, polyester,
Polyurethane or the like is preferably used. The base material 22 may be a single layer of these synthetic resin films, or may be a laminate of multiple layers.
【００１３】このようなフィルムとしては、従来、種々
のものが知られているが、本発明においては、一般にチ
ップにイオン汚染等の悪影響を与えないものであればい
かなるものでも用いることができる。上記のような基材
２２の厚さは、通常２０〜３００μｍであり、好ましく
は３０〜２００μｍである。Various films have been known as such a film, but in the present invention, any film can be used as long as it does not adversely affect the chip such as ion contamination. The thickness of the base material 22 as described above is usually 20 to 300 μm, preferably 30 to 200 μm.
【００１４】このように、半導体ウエハ１の回路面に保
護用粘着テープ２を貼付後に、必要に応じ、ウエハ１の
裏面研削を行ってもよい。裏面研削は、回路形成時に形
成された酸化物被膜を除去したり、ウエハの厚みを整え
るために行われる。次いで、図２に示すように、ダイボ
ンド用の接着フィルム３を前記半導体ウエハ１の裏面に
対して接着積層する。接着フィルム３の大きさ、形状
は、半導体ウエハに貼付された時に半導体ウエハ１と略
同一となるようにする。したがって、一般に半導体ウエ
ハは円形であるため、接着フィルム３も円形にプリカッ
トされているものを用いるか、またはウエハに接着後に
ウエハ形状に合わせて周縁部が切除される。また、プリ
カットされた場合の接着フィルム３の直径は、ウエハ径
に対して−０．５〜＋２％程度である。As described above, after the protective adhesive tape 2 is attached to the circuit surface of the semiconductor wafer 1, the back surface of the wafer 1 may be ground if necessary. The back surface grinding is performed in order to remove the oxide film formed at the time of forming the circuit and to adjust the thickness of the wafer. Next, as shown in FIG. 2, the adhesive film 3 for die bonding is adhesively laminated on the back surface of the semiconductor wafer 1. The size and shape of the adhesive film 3 are set to be substantially the same as the semiconductor wafer 1 when attached to the semiconductor wafer. Therefore, since the semiconductor wafer is generally circular, the adhesive film 3 is also pre-cut in a circular shape, or the peripheral portion is cut off according to the wafer shape after being adhered to the wafer. The diameter of the adhesive film 3 when pre-cut is about -0.5 to + 2% of the wafer diameter.
【００１５】接着フィルム３としては、後述するダイボ
ンド工程でチップを所定の基板上に固着できる機能を有
するものであれば、特に制限されることなく種々の接着
フィルムが用いられる。しかし、後述するダイシング工
程において、ダイシング屑などが付着することを防止す
るため、常温ではタックを有しない熱可塑性接着フィル
ムを用いることが好ましい。The adhesive film 3 is not particularly limited as long as it has a function of fixing a chip on a predetermined substrate in a die bonding process described later, and various adhesive films can be used. However, in the dicing step described below, it is preferable to use a thermoplastic adhesive film that does not have tack at room temperature in order to prevent the dicing dust and the like from adhering.
【００１６】熱可塑性接着フィルムは、たとえばポリエ
ステル樹脂、アクリル樹脂、ポリ酢酸ビニル、ポリビニ
ルブチラール、ポリ塩化ビニル、ポリスチレン、ポリエ
チレン、ポリアミド、ポリイソブチレン、ポリビニルエ
ーテル、ポリイミド樹脂等の各種の熱可塑性樹脂を主成
分とした接着フィルムである。これらの中でも特に耐熱
性の高いポリイミド樹脂を使用したポリイミド系接着フ
ィルムが好ましく用いられる。ポリイミド系接着フィル
ムは、ポリイミド樹脂の他、ポリイミド前駆体であるポ
リアミドイミドからなるものであってもよい。The thermoplastic adhesive film is mainly made of various thermoplastic resins such as polyester resin, acrylic resin, polyvinyl acetate, polyvinyl butyral, polyvinyl chloride, polystyrene, polyethylene, polyamide, polyisobutylene, polyvinyl ether and polyimide resin. It is an adhesive film as a component. Among these, a polyimide-based adhesive film using a polyimide resin having particularly high heat resistance is preferably used. The polyimide-based adhesive film may be made of polyamideimide, which is a polyimide precursor, in addition to the polyimide resin.
【００１７】ポリイミド系接着フィルムに使用するポリ
イミド樹脂の分子量は、好ましくは１０，０００〜５０
０，０００、特に好ましくは５０，０００〜１００，０
００程度である。また、ポリイミド樹脂に、他のポリマ
ーやオリゴマー、低分子化合物を添加したポリイミド系
接着フィルムを用いてもよい。たとえば、エポキシ樹
脂、アミド樹脂、ウレタン樹脂、アミド酸樹脂、アクリ
ル樹脂、シリコーン樹脂などの各種ポリマーやオリゴマ
ー；トリエタノールアミンやα，ω−（ビス３−アミノ
プロピル）ポリエチレングリコールエーテルなどの含窒
素有機化合物などが添加剤として挙げることができる。
なお、主成分であるポリイミド樹脂が熱可塑性であれ
ば、これらの添加剤は熱硬化性であってもよい。The molecular weight of the polyimide resin used in the polyimide adhesive film is preferably 10,000 to 50.
50,000, particularly preferably 50,000 to 100,000
It is about 00. Moreover, you may use the polyimide adhesive film which added the other polymer, oligomer, and low molecular weight compound to the polyimide resin. For example, various polymers and oligomers such as epoxy resin, amide resin, urethane resin, amic acid resin, acrylic resin, and silicone resin; nitrogen-containing organic compounds such as triethanolamine and α, ω- (bis-3-aminopropyl) polyethylene glycol ether. A compound etc. can be mentioned as an additive.
If the main component polyimide resin is thermoplastic, these additives may be thermosetting.
【００１８】接着フィルム３の膜厚は、好ましくは１〜
１００μｍ程度であり、特に好ましくは５〜６０μｍ程
度である。このような接着フィルム３の積層方法は、特
に限定はされないが、工程の自動化という観点から、図
３に示すように、長尺の工程フィルム４上に接着フィル
ム３が剥離可能に積層または成膜されたシートを予め準
備しておくことが好ましい。このシートは、たとえば工
程フィルム４上に、上記接着剤の調製液を塗布乾燥し
て、接着フィルムを成膜し、該接着フィルムの層をウエ
ハと略同サイズに抜き加工して得られる。このようなシ
ートを準備しておくと、図４に示すように、接着フィル
ム３の積層工程を、たとえばローラー５を用いて自動化
でき、省力化に寄与できる。The thickness of the adhesive film 3 is preferably 1 to
It is about 100 μm, and particularly preferably about 5 to 60 μm. A method for laminating such an adhesive film 3 is not particularly limited, but from the viewpoint of automation of the process, as shown in FIG. 3, the adhesive film 3 is peelably laminated or formed on a long process film 4. It is preferable to prepare the prepared sheet in advance. This sheet can be obtained, for example, by applying the above-mentioned adhesive preparation liquid onto the process film 4 and drying it to form an adhesive film, and punching the layer of the adhesive film into substantially the same size as the wafer. By preparing such a sheet, as shown in FIG. 4, the step of laminating the adhesive film 3 can be automated by using, for example, the roller 5, which can contribute to labor saving.
【００１９】工程フィルム４としては、片面が剥離処理
された汎用の剥離フィルムが特に制限されることなく用
いられる。剥離処理面には、接着フィルム３が積層また
は成膜される。工程フィルム４の剥離処理面の表面張力
は、好ましくは４０dyn/cm未満、さらに好ましくは３０
〜４０dyn/cmであり、このような表面張力を有する表面
に接着フィルム３が形成されてなることが好ましい。特
に表面張力が３０〜４０dyn/cmの範囲では、接着フィル
ム３の工程フィルム４から転写性に優れる。As the process film 4, a general-purpose release film having one side subjected to a release treatment is used without particular limitation. The adhesive film 3 is laminated or formed on the release-treated surface. The surface tension of the release treated surface of the process film 4 is preferably less than 40 dyn / cm, more preferably 30.
It is preferably about 40 dyn / cm, and the adhesive film 3 is preferably formed on the surface having such surface tension. In particular, when the surface tension is in the range of 30 to 40 dyn / cm, transferability from the process film 4 of the adhesive film 3 is excellent.
【００２０】工程フィルム４の材質は、特に限定され
ず、片面が剥離処理されている紙、布であってもよい
が、好ましくは合成樹脂フィルムからなる。なお、接着
フィルム３がポリイミド系熱可塑性接着剤からなる場合
には、工程フィルム４は、耐熱性の樹脂からなることが
好ましく、前記樹脂の融点は好ましくは２００℃以上、
さらに好ましくは２３０℃〜３００℃、特に好ましくは
２５０℃〜２８０℃である。The material of the process film 4 is not particularly limited, and may be paper or cloth whose one surface is subjected to a release treatment, but is preferably a synthetic resin film. When the adhesive film 3 is made of a polyimide-based thermoplastic adhesive, the process film 4 is preferably made of a heat resistant resin, and the melting point of the resin is preferably 200 ° C. or higher,
The temperature is more preferably 230 ° C to 300 ° C, particularly preferably 250 ° C to 280 ° C.
【００２１】このような耐熱性の工程フィルム４として
は、具体的には、ポリエチレンナフタレートフィルム、
ポリエチレンテレフタレートフィルム、ポリブチレンテ
レフタレートフィルム、ポリイミドフィルム、ポリエー
テルイミドフィルム、ポリアラミドフィルム、ポリエー
テルケトンフィルム、ポリエーテル・エーテルケトンフ
ィルム、ポリフェニレンサルファイドフィルム、ポリ
（4-メチルペンテン-1）フィルム等が用いられる。ま
た、工程フィルム４はこれらフィルムの積層体であって
もよい。さらに、上記フィルムと、他のフィルムとの積
層体であってもよい。これらの中でも特に好ましくはポ
リエチレンナフタレートフィルムが用いられる。Specific examples of such a heat-resistant process film 4 include polyethylene naphthalate film,
Polyethylene terephthalate film, polybutylene terephthalate film, polyimide film, polyetherimide film, polyaramid film, polyetherketone film, polyether / etherketone film, polyphenylene sulfide film, poly (4-methylpentene-1) film, etc. are used. To be Further, the process film 4 may be a laminated body of these films. Further, it may be a laminate of the above film and another film. Of these, a polyethylene naphthalate film is particularly preferably used.
【００２２】工程フィルム４の膜厚は、その材質にもよ
るが、通常は１０〜３００μｍ程度であり、好ましくは
１６〜１００μｍ程度である。工程フィルム４の調整時
の剥離処理に用いられる剥離剤としては、アルキッド
系、シリコーン系、フッ素系、不飽和ポリエステル系、
ポリオレフィン系、ワックス系等が用いられるが、特に
アルキッド系、シリコーン系、フッ素系の剥離剤が耐熱
性を有するので好ましい。特に基材フィルムへの密着性
が高く、表面張力が調製しやすいため、アルキッド樹脂
が好ましい。The thickness of the process film 4 depends on its material, but is usually about 10 to 300 μm, preferably about 16 to 100 μm. Examples of the release agent used in the release treatment during preparation of the process film 4 include alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based,
Polyolefin-based or wax-based release agents are used, and alkyd-based, silicone-based, and fluorine-based release agents are preferable because they have heat resistance. In particular, alkyd resin is preferable because it has high adhesion to the substrate film and the surface tension is easily adjusted.
【００２３】上記の剥離剤を用いてを剥離処理するため
には、剥離剤をそのまま無溶剤で、または溶剤希釈やエ
マルション化して、グラビアコーター、メイヤーバーコ
ーター、エアナイフコーター、ロールコーター等により
樹脂フィルムに塗布して、常温または加熱により、ある
いは紫外線や電子線により硬化させたり、ウェットラミ
ネーションやドライラミネーション、熱溶融ラミネーシ
ョン、溶融押出ラミネーション、共押出加工などで積層
体を形成すればよい。In order to perform the stripping treatment using the above-mentioned stripping agent, the stripping agent may be used as it is without a solvent, or may be diluted with a solvent or emulsified, and a resin film may be obtained by a gravure coater, a Meyer bar coater, an air knife coater, a roll coater or the like. Then, the laminate may be formed by applying it to room temperature, heating, curing with ultraviolet rays or electron beams, wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing, or the like.
【００２４】半導体ウエハ１の裏面に接着フィルム３を
接着した後、半導体ウエハ１および接着フィルム３をダ
イシング装置等を用いてダイシングして、接着フィルム
付のチップを得る。ダイシングは、上記半導体ウエハ１
が保護用粘着テープ２上に支持された状態で行う。ダイ
シングに際しては、図５に示すように、保護用粘着テー
プ２の背面を吸着テーブル７に吸着させることで、ウエ
ハ１を固定しておいてもよく、また、図６に示すよう
に、保護用粘着テープ２の背面を、リングフレーム９に
張設された固定用粘着シート８に貼着することでウエハ
を固定しておいてもよい。After the adhesive film 3 is adhered to the back surface of the semiconductor wafer 1, the semiconductor wafer 1 and the adhesive film 3 are diced using a dicing device or the like to obtain chips with the adhesive film. Dicing is performed on the semiconductor wafer 1 described above.
Is supported on the protective adhesive tape 2. At the time of dicing, the wafer 1 may be fixed by adsorbing the back surface of the protective adhesive tape 2 to the adsorption table 7 as shown in FIG. 5, or as shown in FIG. The wafer may be fixed by adhering the back surface of the adhesive tape 2 to the fixing adhesive sheet 8 stretched on the ring frame 9.
【００２５】ダイシングは、ダイシング装置のダイシン
グブレード６等により接着フィルム３およびウエハ１を
完全に切断するように行う。このようにして裏面に接着
フィルム３を有するチップ１０が得られる。次いで、ダ
イスピッカー、ダイスボンダー等の装置のコレット１１
等を用いて、チップ１０を保護用粘着テープ２からピッ
クアップする。なお、保護用粘着テープ２の粘着剤層２
１をエネルギー線硬化型粘着剤から形成した場合には、
チップ１０のピックアップに先立ち、粘着剤層２１にエ
ネルギー線を照射して接着力を低下させておくことが好
ましい。接着力を低下させることで、チップのピックア
ップが円滑に行えるようになる。ピックアップされたチ
ップ１０は、所定のトレイに移載して保管してもよい
し、直接所定のチップ搭載用基板にダイボンドしてもよ
い。The dicing is performed so that the adhesive film 3 and the wafer 1 are completely cut by the dicing blade 6 of the dicing device. Thus, the chip 10 having the adhesive film 3 on the back surface is obtained. Next, collet 11 for equipment such as die picker and die bonder
The chip 10 is picked up from the protective pressure-sensitive adhesive tape 2 using the above. The adhesive layer 2 of the protective adhesive tape 2
When 1 is formed from an energy ray-curable adhesive,
Prior to picking up the chip 10, it is preferable to irradiate the pressure-sensitive adhesive layer 21 with energy rays to reduce the adhesive force. By lowering the adhesive strength, the chips can be picked up smoothly. The picked-up chip 10 may be transferred and stored in a predetermined tray, or may be directly die-bonded to a predetermined chip mounting substrate.
【００２６】接着フィルム３として熱可塑性接着フィル
ムを用いた場合には、チップ１０を載置する前に加熱す
るか載置直後にチップ搭載用基板を加熱してダイボンド
することが好ましい。加熱温度は、熱可塑性接着フィル
ムを構成する熱可塑性接着剤が軟化する温度であれば充
分である。たとえばポリイミド系接着剤を使用する場
合、加熱温度は、通常は８０〜２００℃、好ましくは１
００〜１８０℃であり、加熱時間は、通常は0.1秒〜５
分、好ましくは0.5秒〜３分であり、またチップマウン
ト圧力は通常１ｋＰａ〜１００ＭＰａである。When a thermoplastic adhesive film is used as the adhesive film 3, it is preferable to heat the chip 10 before mounting it, or to heat the chip mounting substrate immediately after mounting to die bond it. It is sufficient that the heating temperature is a temperature at which the thermoplastic adhesive forming the thermoplastic adhesive film is softened. For example, when a polyimide adhesive is used, the heating temperature is usually 80 to 200 ° C, preferably 1
The heating time is usually from 0.1 second to 5 ° C.
Minutes, preferably 0.5 seconds to 3 minutes, and the chip mounting pressure is usually 1 kPa to 100 MPa.
【００２７】このようにしてチップ１０をダイボンドし
た後、ワイヤーボンディング、モールディングなどの工
程を経て、半導体装置が得られる。After die-bonding the chip 10 in this manner, a semiconductor device is obtained through steps such as wire bonding and molding.
【００２８】[0028]
【発明の効果】このような本発明によれば、ダイボンド
用接着フィルムには、チップ固定機能や剥離性は要求さ
れないので、ダイボンド性にのみ重点をおいて材料選択
ができる。このため、接着フィルムの設計に選択の幅が
広がり、コストの削減に寄与しうる。According to the present invention as described above, since the die-bonding adhesive film is not required to have the chip fixing function or the peeling property, the material can be selected by focusing only on the die-bonding property. For this reason, the range of choices can be expanded in the design of the adhesive film, which can contribute to cost reduction.
【００２９】[0029]
【実施例１】半導体ウエハ（200mm径、厚さ720μm）の
回路面側に対し、紫外線硬化型粘着剤層を有するウエハ
研磨用の保護用粘着テープ（リンテック社製、Adwill E
8180）をテープラミネーター（リンテック社製、RAD350
0m/12）を用いて貼付した。この半導体ウエハの裏面側
をウエハ研磨装置（ディスコ社製、DFG840）を用いて厚
さ100μmまで研磨を行った。Example 1 A protective adhesive tape for wafer polishing having an ultraviolet-curable adhesive layer on the circuit side of a semiconductor wafer (200 mm diameter, 720 μm thickness) (Adwill E manufactured by Lintec Co., Ltd.)
8180) tape laminator (LINTEC, RAD350
0m / 12) was applied. The back surface side of this semiconductor wafer was polished to a thickness of 100 μm using a wafer polishing apparatus (DFG840, manufactured by Disco Corporation).
【００３０】ダイボンディング用の接着シートとして、
工程フィルム上に加熱接着型のポリイミドの層を有する
接着シート（リンテック社製、Adwill LP-3）を用い
た。220mm幅としたこの接着シートのポリイミド層のみ
を、15mm間隔で直径201mmの円形に打ち抜き、外周部を
カス部として除去した。この接着シートを上記で用意し
た半導体ウエハの研磨面に対して、温度130℃、圧力0.1
5Ｐａ、時間5 秒で圧着し、工程フィルムを剥離して、
半導体ウエハ裏面に対し略面一となるよう転写した。As an adhesive sheet for die bonding,
An adhesive sheet (Adwill LP-3, manufactured by Lintec Co., Ltd.) having a heat-adhesive polyimide layer on the process film was used. Only the polyimide layer of this adhesive sheet having a width of 220 mm was punched out at intervals of 15 mm into a circle having a diameter of 201 mm, and the outer peripheral portion was removed as a scrap. This adhesive sheet was applied to the polished surface of the semiconductor wafer prepared above at a temperature of 130 ° C. and a pressure of 0.1.
It is pressure-bonded at 5 Pa for 5 seconds, peels the process film,
Transfer was performed so as to be substantially flush with the back surface of the semiconductor wafer.
【００３１】固定用粘着テープとして厚さ80μmのポリ
オレフィンフィルムに強粘着力のアクリル系粘着剤層
（リンテック社製、品名PK、厚さ25μm）を設けたもの
を用意した。テープマウンター（リンテック社製、RAD2
500m/8）を用いて、研磨したウエハの保護用粘着テープ
側に該固定用粘着テープを貼付するとともに、その外周
部をリングフレーム（ディスコ社製、MODTF2-8-1）に貼
付固定した。An 80 μm thick polyolefin film provided with a strong adhesive acrylic adhesive layer (manufactured by Lintec Co., product name PK, thickness 25 μm) was prepared as an adhesive tape for fixing. Tape mounter (RAD2 manufactured by Lintec Co., Ltd.
The fixing adhesive tape was attached to the protective adhesive tape side of the polished wafer by using 500 m / 8) and the outer peripheral portion was attached and fixed to a ring frame (MODTF2-8-1 manufactured by Disco Corporation).
【００３２】リングフレームに支持されたウエハをダイ
シング装置（東京精密社製、AWD4000B）を用いて、接着
シートとともに半導体ウエハを10mmｘ10mmのチップサイ
ズにダイシングした。ダイシングの際の切り込み深さ
は、保護用粘着テープの粘着面の位置から20μmを切り
込む量とした。続いて、ダイスピッカーを用いてチップ
のピックアップを行い、基板の代用とした300μm厚の銅
板上に、温度１５０℃、圧力２０ｋPa、時間３秒でダイ
ボンディングを行ったところ、工程上の問題もなくチッ
プのダメージも観察されなかった。The wafer supported on the ring frame was diced into a chip size of 10 mm × 10 mm together with the adhesive sheet by using a dicing device (AWD4000B manufactured by Tokyo Seimitsu Co., Ltd.). The cutting depth during dicing was the amount of cutting 20 μm from the position of the adhesive surface of the protective adhesive tape. Subsequently, the chip was picked up using a die picker, and die bonding was performed on a copper plate having a thickness of 300 μm, which was used as a substitute for the substrate, at a temperature of 150 ° C., a pressure of 20 kPa, and a time of 3 seconds. No chip damage was observed.
【図１】本発明に係る半導体装置の製造工程の一工程を
示す。FIG. 1 shows one step of a manufacturing process of a semiconductor device according to the present invention.
【図２】本発明に係る半導体装置の製造工程の一工程を
示す。FIG. 2 shows one step of a manufacturing process of a semiconductor device according to the present invention.
【図３】本発明で用いる接着フィルムの使用前の状態を
示す。FIG. 3 shows a state before using the adhesive film used in the present invention.
【図４】本発明に係る半導体装置の製造工程の一工程を
示す。FIG. 4 shows one step of a manufacturing process of a semiconductor device according to the present invention.
【図５】本発明に係る半導体装置の製造工程の一工程を
示す。FIG. 5 shows one step of a manufacturing process of a semiconductor device according to the present invention.
【図６】本発明に係る半導体装置の製造工程の一工程を
示す。FIG. 6 shows one step of a manufacturing process of a semiconductor device according to the present invention.
【図７】本発明に係る半導体装置の製造工程の一工程を
示す。FIG. 7 shows one step of a manufacturing process of a semiconductor device according to the present invention.
１…ウエハ ２…保護用粘着テープ ２１…粘着剤層 ２２…基材 ３…接着フィルム ４…工程フィルム ５…ローラー ６…ダイシングブレード ７…吸着テーブル ８…固定用粘着シート ９…リングフレーム １０…チップ １１…コレット 1 ... Wafer 2 ... Protective adhesive tape 21 ... Adhesive layer 22 ... Base material 3 ... Adhesive film 4 ... Process film 5 ... roller 6 ... Dicing blade 7 ... Suction table 8 ... Adhesive sheet for fixing 9 ... Ring frame 10 ... Chip 11 ... Collet
Claims (3)
を貼付し、 ダイボンド用の接着フィルムを前記半導体ウエハの裏面
に対して接着積層し、 前記保護用粘着テープ上に半導体ウエハを支持した状態
で、前記接着フィルムの側よりダイシングを行い、前記
接着フィルムとともに半導体ウエハをチップ化し、 前記保護用粘着シートから半導体チップをピックアップ
して、前記接着フィルムによってチップ搭載用基板にダ
イボンドすることを特徴とする半導体装置の製造方法。1. A state in which a protective adhesive tape is attached to the circuit surface of a semiconductor wafer, an adhesive film for die bonding is adhesively laminated on the back surface of the semiconductor wafer, and the semiconductor wafer is supported on the protective adhesive tape. In the above, dicing is performed from the side of the adhesive film, a semiconductor wafer is chipped together with the adhesive film, a semiconductor chip is picked up from the protective adhesive sheet, and the adhesive film is die-bonded to a chip mounting substrate. Of manufacturing a semiconductor device.
ープを貼付した後、前記半導体ウエハの裏面側の研磨を
行って所定の厚さに加工し、 その後、前記ダイボンド用の接着フィルムを前記半導体
ウエハの研磨面に接着積層することを特徴とする請求項
１記載の半導体装置の製造方法。2. A protective adhesive tape is applied to the circuit surface of the semiconductor wafer, the back surface of the semiconductor wafer is polished to a predetermined thickness, and then the adhesive film for die bonding is applied to the semiconductor wafer. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor wafer is bonded and laminated on a polished surface of the semiconductor wafer.
上に剥離可能に積層され、該工程フィルム上で半導体ウ
エハと略同サイズに抜き加工が施されてなるものである
ことを特徴とする請求項１又は２記載の半導体装置の製
造方法。3. The adhesive film is releasably laminated on a long process film, and is punched into a size substantially the same as a semiconductor wafer on the process film. The method for manufacturing a semiconductor device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002128659A JP2003324080A (en) | 2002-04-30 | 2002-04-30 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002128659A JP2003324080A (en) | 2002-04-30 | 2002-04-30 | Method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003324080A true JP2003324080A (en) | 2003-11-14 |
Family
ID=29542338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002128659A Pending JP2003324080A (en) | 2002-04-30 | 2002-04-30 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003324080A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332267A (en) * | 2002-05-09 | 2003-11-21 | Lintec Corp | Method for working semiconductor wafer |
| JP2008098428A (en) * | 2006-10-12 | 2008-04-24 | Toshiba Corp | Method of manufacturing semiconductor device |
| JP2008300521A (en) * | 2007-05-30 | 2008-12-11 | Disco Abrasive Syst Ltd | Semiconductor wafer and its processing method |
| JP2009283607A (en) * | 2008-05-21 | 2009-12-03 | Hitachi Chem Co Ltd | Semiconductor bonding tape also serving for wafer thinning processing, and method for pasting the tape onto semiconductor wafer surface |
| JP2013065888A (en) * | 2012-12-25 | 2013-04-11 | Hitachi Chemical Co Ltd | Semiconductor device manufacturing method |
-
2002
- 2002-04-30 JP JP2002128659A patent/JP2003324080A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332267A (en) * | 2002-05-09 | 2003-11-21 | Lintec Corp | Method for working semiconductor wafer |
| JP2008098428A (en) * | 2006-10-12 | 2008-04-24 | Toshiba Corp | Method of manufacturing semiconductor device |
| JP2008300521A (en) * | 2007-05-30 | 2008-12-11 | Disco Abrasive Syst Ltd | Semiconductor wafer and its processing method |
| JP2009283607A (en) * | 2008-05-21 | 2009-12-03 | Hitachi Chem Co Ltd | Semiconductor bonding tape also serving for wafer thinning processing, and method for pasting the tape onto semiconductor wafer surface |
| JP2013065888A (en) * | 2012-12-25 | 2013-04-11 | Hitachi Chemical Co Ltd | Semiconductor device manufacturing method |
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