JP2013065888A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable diversion of existing inline equipment in application of a semiconductor adhesion tape; inhibit contact of a wafer and a cutting blade, contamination of cutting scraps and displacement of a cutting position which occur at the time of tape cutting; and prevent a wafer damage occurring at the time of peeling a base material tape having an adhesive layer.SOLUTION: A semiconductor device manufacturing method comprises: forming a laminate by attaching to a semiconductor wafer, a semiconductor adhesive tape also used for wafer thinning, which includes a base material film having an adhesive layer and an adhesive film, in a state where the adhesive film side faces a circuit face having a plurality of protruding electrodes of the semiconductor wafer; polishing the laminate from a rear face side; attaching a dicing tape to the rear face side of the laminate in a state where the semiconductor adhesive tape is attached to the circuit face side; peeling the base material film and dicing the laminate from the adhesive film side to obtain a plurality of semiconductor chips with adhesive films; and subsequently, mounting the semiconductor chips on support media, respectively. The step of mounting the semiconductor chips includes thermal pressure bonding the semiconductor chip with the support medium at a temperature within a range of 100-250°C for 0.1-30 seconds to connect the semiconductor chip with the adhesive film and the support medium.

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  An adhesive film that is supplied to a semiconductor wafer as a tape for processing a semiconductor wafer that is applied when grinding the back surface of the semiconductor wafer, and is further applied as an adhesive for connecting a circuit member when a semiconductor circuit is connected to a circuit board by a face-down bonding method. As described below, semiconductor device manufacturing methods described in Patent Documents 1 and 2 below are known.

  In the manufacturing method described in Patent Document 1, a wafer processing tape having a pressure-sensitive adhesive layer and an adhesive layer on a base film is prepared. Then, the back grinding process of the semiconductor wafer is performed in a state where the processing tape is bonded to the surface of the semiconductor wafer where the protruding electrodes are formed.

  On the other hand, in the manufacturing method described in Patent Document 2, a semiconductor chip bonding sheet is prepared by providing a thermosetting resin layer on a synthetic resin film, and the thermosetting resin layer is pressure-bonded to the bump electrode surface of the semiconductor chip, The synthetic resin film is peeled off to connect to the circuit board.

  In order to attach an adhesive tape used for flip chip connection to a semiconductor wafer, heating at 60 to 90 ° C. is usually required. However, a surface protection tape for thinning processing, which is usually used when grinding the back surface of the wafer, is attached to the semiconductor wafer. It doesn't need that high temperature to put it on.

  For this reason, the conventional surface protection tape is not equipped with a heating mechanism for the pasting mechanism part in devices that have been pasted with a surface protection tape on a semiconductor wafer, and various parts of the device may not have a heat resistant structure. There is a problem that the pasting device cannot be diverted.

  There are differences in physical properties such as hardness between tapes having different functions, such as a laminated type wafer thinning adhesive tape for semiconductors. This is no exception for the surface protection tape that enables flat grinding of the backside of the wafer and the adhesive tape that satisfies the solder reflow resistance of the semiconductor device using flip chip mounting.

  However, when cutting laminated tapes with different physical properties at once, cutting scraps called burrs and whiskers are likely to be generated, and when wafer backside grinding is started with these cutting scraps left untreated. However, there is a problem that the wafer is damaged, the wafer is prevented from being uniformly and flatly thinned, and the cutting position is easily shifted.

  Various tapes to be attached to the front and back surfaces of the wafer cut the tape along the shape of the wafer after being attached, but to the wafer, like the adhesive tape for semiconductor thinning combined with semiconductor in this case In the case of a tape whose temperature exceeds 60 ° C., the tape is often cut immediately after being attached to the wafer, and the tape cutting blade, the wafer and the tape may be heated.

In such a case, there are problems such that the tape to be discarded after cutting and the tape attached to the wafer are re-fused, and the cutting blade and the tape are fused.
The blades used to cut various tapes must be worn.

In addition, the blade used when cutting the tape according to the present invention may have a special surface treatment to prevent fusion with the tape.
The blade used for cutting the tape according to the present invention needs to be replaced at a certain frequency due to wear, but there is a problem that many are expensive.

  In the conventional method of attaching the surface protection tape to the wafer surface, the tape may be cut larger than the wafer in order to prevent the thin wafer from contacting the blade for cutting the tape and causing the wafer to be contaminated with metal.

  When the above-mentioned cutting is performed and a dicing tape for cutting the wafer is attached to the back surface of the wafer, the surface protection tape protruding from the outer periphery of the wafer sticks to the dicing tape and prevents safe peeling of the surface protection tape. Problems arise.

  In the case of laminated tapes processed to the same shape and size as the wafer, unless one of them is connected to a workpiece, or there is no support tape on one or both of the upper and lower surfaces, it is applied to the wafer in the subsequent process. The tape part to be attached will be independent. In that case, a problem arises in that the laminated tape cannot be handled in an existing apparatus that is supposed to attach the fabric tape to the wafer.

JP 2006-049482 A JP 2001-326346 A

  In the present invention, an existing in-line device can be diverted when a semiconductor adhesive tape also used for wafer thinning is attached to a wafer, and the contact between the wafer and the cutting blade that occurs when the tape is cut. To provide a method for manufacturing a semiconductor device capable of suppressing wafer contamination of cutting waste and cutting position shift, and capable of preventing wafer breakage during peeling of a base tape having an adhesive layer. It is the purpose.

  The present invention provides a process for preparing a semiconductor wafer having a plurality of protruding electrodes protruding from a circuit surface, and a wafer thinning combined semiconductor adhesive tape having a base film having an adhesive layer and an adhesive film. Pasting the film side to the semiconductor wafer with the circuit side facing the circuit surface of the semiconductor wafer to form a laminate in which an adhesive film layer is formed so as to fill between the plurality of protruding electrodes; Polishing the semiconductor wafer from the back side with a back grinder while applying pressure from the base film side of the laminate, and reducing the thickness of the semiconductor wafer; and thinning the wafer on the circuit surface side of the semiconductor wafer With the dual-use semiconductor adhesive tape still attached, a dicing tape is applied to the back surface of the laminated wafer thin-film dual-use semiconductor adhesive tape. A step of peeling the base film from the adhesive tape for semiconductor for wafer thinning, and dicing the semiconductor wafer and the adhesive film from the side of the adhesive film, and a plurality of semiconductor chips with adhesive films A step of lifting the semiconductor chip with an adhesive film from the dicing tape, a step of mounting the semiconductor chip with an adhesive film separated from the dicing tape on a support that is a part of a semiconductor device, and In the mounting step, the semiconductor chip with the adhesive film and the support are connected by thermocompression bonding at a temperature of 100 to 250 ° C. for 0.1 to 30 seconds. The present invention relates to a method for manufacturing a semiconductor device.

  The present invention also relates to a method for manufacturing a semiconductor device, wherein the pressure-sensitive adhesive layer has a reduced adhesive strength when irradiated with radiation.

  The present invention also relates to a method for manufacturing a semiconductor device, wherein both or one of the base film and the adhesive film has the same shape and the same size as the semiconductor wafer.

  The present invention is a laminated type wafer thinning adhesive tape for a semiconductor combined with a base film having an adhesive layer and an adhesive film, both of the base film and the laminated adhesive film Alternatively, the present invention relates to a wafer thinning combined semiconductor adhesive tape having one shape and the same size as a semiconductor wafer.

The present invention also relates to the wafer thinning combined semiconductor adhesive tape, wherein the semiconductor adhesive tape has support tapes on the upper and lower surfaces.
The present invention also relates to the above-mentioned wafer thinning combined semiconductor adhesive tape having a positioning tape when the adhesive tape for semiconductor has a support tape and is attached to the front, back, left or right thereof.

  In the present invention, both or one of the base film and the laminated adhesive film have the same shape and the same size as the semiconductor wafer, and a tape having the same shape and the same size as the semiconductor wafer. Further, the present invention relates to the above wafer thinning combined semiconductor adhesive tape obtained by punching, cutting and coating.

  In addition, the present invention is such that the semiconductor adhesive tape is applied to the circuit side of the wafer surface during the backside grinding of the wafer, and after the backside grinding, it is peeled off between the base film having the adhesive layer and the adhesive film. The present invention relates to an adhesive tape for a semiconductor that can also be used for wafer thinning.

  The present invention also provides a semiconductor device, such as a lead frame, a semiconductor package substrate, or another semiconductor chip, after which the adhesive layer is divided into the size of the semiconductor chip with the wafer surface stuck to the circuit side. The present invention relates to the above-mentioned adhesive tape for semiconductors for wafer thinning, which is heat-bonded to a support that is a part of the above.

  The present invention also provides the wafer thin film, wherein the adhesive layer is heat bonded to a support that is a part of a semiconductor device such as another semiconductor wafer in a state where the adhesive layer is attached to the circuit side of the wafer surface. The present invention relates to an adhesive tape for semiconductors that is also used for chemical processing.

The present invention also relates to the above-mentioned adhesive tape for a semiconductor for wafer thinning, wherein the semiconductor chip and a support that is a part of the semiconductor device are electrically and physically connected by an adhesive.
The present invention also relates to the above-mentioned adhesive tape for semiconductors for wafer thinning which can be electrically and physically connected by conductive particles contained in an adhesive.

  Further, the present invention provides an adhesive tape for a semiconductor which is also used for wafer thinning, in a state where the film side which is an adhesive of the adhesive tape for a semiconductor for wafer thinning obtained as described above is directed to the circuit surface side. The present invention relates to a method for attaching a semiconductor adhesive tape for semiconductor thinning, which is also used for wafer thinning, to the surface of a semiconductor wafer, wherein the semiconductor wafer is polished from the back side while applying pressure after being attached to the circuit surface.

  Since the adhesive tape for semiconductors that is also used for wafer thinning according to the present invention is manufactured in advance in a wafer shape at the time of shipment, the step of cutting the tape to attach the tape to the wafer is unnecessary. is there.

  Therefore, contamination of the wafer surface due to cutting waste, abrasion of the cutting blade, fusion of the cutting blade and the wafer with tape and the cutting waste, and metal contamination of the wafer due to contact between the cutting blade and the wafer do not occur.

  In the adhesive tape for semiconductors used for wafer thinning according to the present invention, one of a base film having an adhesive layer or a film that is an adhesive is manufactured in advance in a wafer shape at the time of shipment.

  Therefore, in the process of cutting the tape, there is a peeling defect between the adhesive layer and the adhesive material layer due to cutting waste, displacement of the cutting position due to the difference in physical properties of each film, and pushing of the film at the time of cutting. Is unlikely to occur.

  When the shape of the adhesive tape for semiconductors used for wafer thinning according to the present invention is slightly smaller than the wafer shape, the tape does not protrude to the back side of the wafer after being attached to the wafer. In this case, even if the dicing tape is attached to the back side of the wafer, the dicing tape and the adhesive tape for semiconductors for wafer thinning according to the present invention are not attached with the wafer interposed therebetween.

  Therefore, when the substrate film having the pressure-sensitive adhesive layer is peeled off from the wafer leaving the film as an adhesive after the dicing tape is attached, the possibility of causing damage to the wafer is reduced.

  In order to affix the wafer adhesive tape for semiconductor thinning processing according to the present invention to the wafer, a heating mechanism is introduced into the affixing portion of the existing surface protection tape affixing device, or an existing die bonding film affixing device Must be diverted.

  In the latter case, for example, since it can be attached with an apparatus such as DFM-2700 manufactured by DISCO Corporation, a tape attaching apparatus (attaching an adhesive tape for a semiconductor for wafer thinning according to the present invention) → There is a possibility that a process such as a back grinder (wafer thinning process) → tape attaching apparatus (peeling a base film having an adhesive layer, attaching a dicing tape, etc.) can be automatically performed.

  The effect is that there are marks for alignment in attaching to the wafer on the front, back, left and right of the punching shape of the semiconductor adhesive tape for wafer thinning according to the present invention, and the apparatus reads the marks. Even if the mechanism is provided, the same applies.

  According to the present invention, an existing in-line apparatus can be diverted when a semiconductor adhesive tape that is also used for wafer thinning is attached to a wafer, and further, a wafer and a cutting blade generated when the tape is cut. Contact, wafer contamination of cutting waste, and cutting position shift can be suppressed.

  In addition, when the dicing tape is attached to the back side of the wafer, the semiconductor adhesive tape that is also used for wafer thinning is cut larger than the wafer shape, or the wafer is sandwiched between the wafers due to misalignment of the tape. Adhesion between the dicing tape and the semiconductor adhesive tape used for wafer thinning can be prevented. As a result, wafer breakage at the time of peeling of the base tape having the pressure-sensitive adhesive layer can be prevented.

It is sectional drawing which shows the wafer which concerns on this invention. It is a figure which shows the structure and cross section of the adhesive tape for semiconductors combined with a wafer thinning process based on this invention. It is sectional drawing which shows the state by which the tape of FIG. 2 was affixed on the circuit surface of the semiconductor wafer. It is sectional drawing which shows the state which set the laminated body produced in FIG. 3 to the dicing frame. It is sectional drawing which shows the process of peeling the base film which has an adhesive layer from the laminated body of FIG. It is sectional drawing which shows the process of dicing and the process of picking up the laminated body of FIG. FIG. 6 is a schematic view in which a semiconductor chip with an adhesive tape separated and picked up in FIG. 6 is thermocompression bonded to a support that is a part of a semiconductor device, and the semiconductor chip and the support are electrically and physically connected. It is.

  Hereinafter, the punching shape of the adhesive tape for a semiconductor also used for wafer thinning according to the present invention and a method for attaching to a wafer will be described in detail with reference to the drawings.

  First, the semiconductor wafer 10 shown in FIG. 1 is prepared. The semiconductor wafer 10 has a circuit surface (main surface) A1 on which a circuit is formed by a semiconductor process, and a back surface A2 that is a surface opposite to the circuit surface A1.

  A plurality of protruding electrodes A3 protruding from the circuit surface A1 are formed on the circuit surface A1 of the semiconductor wafer 10. In addition, the thickness of the semiconductor wafer 10 at this time is a state before the back grinding, and is usually about 550 μm to 750 μm.

  Further, wafer thinning combined semiconductor adhesive tape (hereinafter referred to as semiconductor adhesive tape) 20, 21, 22, 23, 24, and 25 shown in FIG. 2 are prepared. Each includes a base film B1 having an adhesive layer B2 and an adhesive film B3, and a semiconductor adhesive tape 21 is provided above and below the support tape (hereinafter referred to as support tape). B4 and B5), the semiconductor adhesive tape 22 has a center portion of the adhesive film B3 punched into a wafer shape, and the semiconductor adhesive tape 23 is added to the semiconductor adhesive tape 22 and the tape The adhesive film B3 remains at both ends.

  In the semiconductor adhesive tape 24, the base film B1, the adhesive layer B2, and the adhesive film B3 are punched out. In addition to the semiconductor adhesive tape 24, the semiconductor adhesive tape 25 has a base film B1 on both ends of the tape, The pressure-sensitive adhesive layer B2 and the adhesive film B3 remain. Further, the diameter b1 when manufactured in the wafer shape may be almost equal to or larger than the diameter of the wafer, and there is a difference between the base film B1 having the adhesive layer B2 and the adhesive film B3. May be.

  And the adhesive tapes 20-25 for semiconductors are affixed on the circuit surface A1 of the semiconductor wafer 10 in the state which orient | assigned the adhesive film B3 side to the circuit surface A1. The semiconductor adhesive tapes 20 to 25 are attached to the semiconductor wafer 10 after the support tape B5 has been peeled off, and if necessary, after the support film B4 has been peeled off.

  Further, in the case of a punched tape such as the semiconductor adhesive tapes 22 to 25, there may be marks on the front, rear, left and right for alignment. These sticking can be performed using a laminate roll, for example.

  At this time, the base film B1 is pressurized with a predetermined pressure, whereby the layer of the adhesive film B3 is formed so as to fill between the protruding electrodes A3. Thus, as shown in FIG. 3, the wafer thinning combined semiconductor adhesive tape and wafer bonded product (with support tape) 30 or wafer thin film having a structure in which the protruding electrode A3 is embedded on the circuit surface A1. A bonded product (no support tape, before thinning) 31 of the adhesive tape for semiconductor for semiconductor use and the wafer is formed.

  The layer of the adhesive film B3 as described above may be generally referred to as “NCF (Non Conductive Film)” or “ACF (Anisotropic Conductive Film)”. The pressurization of the base film B1 may be performed through the support tape B4. However, the support tape B4 is peeled off during back grinding, and as a result, only the wafer processing tape 33 is bonded to the semiconductor wafer 10 in both cases. Will be.

  Subsequently, as shown in the wafer thinning combined semiconductor adhesive tape and wafer bonded product (no support tape, before thinning) 31 in FIG. 3, the semiconductor wafer 10, the base film B1, and the adhesive layer B2 are shown. Further, the semiconductor wafer 10 is laminated from the back surface A2 side while applying pressure from the base film B1 to the wafer processing tape 33 for semiconductor thinning combined with the wafer thinning process composed of the laminated product of the adhesive film B3. To reduce the thickness of the semiconductor wafer 10.

  Specifically, the semiconductor wafer 10 is polished so that the thickness of the semiconductor wafer 10 is thinner than the original thickness of the semiconductor wafer 10 (about 1 μm to 550 μm) (polishing step). Here, since the said wafer processing tape 33 (laminated product of base film B1, adhesive layer B2, and adhesive film B3) is affixed on the circuit surface A1 side of the semiconductor wafer 10, a pressure can be applied uniformly. .

  As a result, the back surface A2 of the semiconductor wafer 10 can be planarized by polishing. Moreover, damage to the semiconductor wafer 10 during back grinding can be suppressed by the base film B1 and the adhesive layer B2. In this way, the laminated body 32 of the thinned semiconductor wafer 10 and the wafer processing tape attached to the circuit surface A1 is manufactured.

  Subsequently, as shown in FIG. 4, the wafer processing tape is still attached to the circuit surface A <b> 1 side of the semiconductor wafer 10, and the back surface A <b> 2 side of the laminated body 32 of the wafer processing tape and the lower edge of the dicing frame 41. A dicing tape 42 is affixed to 41A. Here, the dicing frame 41 is an annular metal member or plastic, and is used as a fixing jig for dicing the laminated body 32 of the semiconductor wafer and the wafer processing tape.

  The inner diameter of the dicing frame 41 is larger than the outer shape of the semiconductor wafer 10 and is disposed on the dicing tape 42 so as to surround the laminated body 32 of the semiconductor wafer 10 and the wafer processing tape. In this case, the laminated body 32 of the semiconductor wafer and the wafer processing tape may be attached to the dicing tape with either the circuit surface A1 side or the back surface A2 side as the front surface.

  Subsequently, the base film B1 having the pressure-sensitive adhesive layer B2 is peeled off from the laminated body 32 of the wafer processing tape. At this time, in order to reduce the adhesive force between the pressure-sensitive adhesive layer B2 and the adhesive film B3, the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer B2 may be reduced by irradiation with radiation (for example, ultraviolet rays). Then, the tape 51 for peeling is affixed on the base film B1 as shown in FIG. 5, and the tape can be peeled between the adhesive layer B2 and the adhesive film B3 by pulling it in the 180 ° direction.

  Subsequently, as shown in FIG. 6, the laminated body 61 of the semiconductor wafer 10 and the adhesive film B3 is diced by a dicing blade 62 to form a plurality of semiconductor chips 63 with a film as an adhesive. The dicing method in this case may be a dicing blade, a laser beam, or plasma etching.

  At this time, the size of the semiconductor chip is, for example, 0.1 mm to 30.0 mm × 0.1 mm to 30.0 mm, and the number of protruding electrodes A3 per semiconductor chip is larger than one. The semiconductor chip 63 with a film, which is an individualized adhesive, is lifted from the dicing tape 42 one by one after dicing.

  The semiconductor chip 63 with the film, which is an adhesive, separated from the dicing tape 42 is mounted on a support that becomes a part of the semiconductor device, such as a mounting substrate having electrodes or another semiconductor chip as shown in FIG. Is done. In that case, the same number of electrodes or wirings 72 as the protruding electrodes A3 of the semiconductor chip to be mounted are formed on the portion of the support 71 which is a part of the semiconductor device where the semiconductor chip is mounted.

  In the mounting process, the semiconductor chip is arranged so that the protruding electrode A3 and the electrode or wiring 72 are opposed to each other, and thermocompression bonding is performed at a temperature of 100 to 250 ° C. for 0.1 to 30 seconds. As a result, the protruding electrode A3 and the electrode or wiring 72 are electrically or physically connected directly or through conductive particles contained in the adhesive film B3.

  Further, the semiconductor chip 63 with a film which is an adhesive and the support 71 which is a part of the semiconductor device are bonded by an adhesive film B3. Note that the temperature and time for mounting can be reduced to a low temperature and a short time by separately providing a heating step.

  Note that the above-described chip separation process does not have to be performed in the order described above, and the wafer whose dicing depth is controlled between the circuit surface A1 and the back surface A2 of the semiconductor wafer 10 is changed to a wafer. It may be carried out by grinding from the back surface A2 after affixing a wafer processing tape for a semiconductor adhesive tape also used for thinning. In that case, peeling between the base film B1, the pressure-sensitive adhesive layer B2, and the adhesive film B3 does not have to be performed.

  The adhesive film B3 is formed, for example, by applying an adhesive composition on the carrier film or the pressure-sensitive adhesive layer B2 placed on the base film B1, and then drying the adhesive composition B2. The adhesive film B3 is solid at room temperature, for example. The adhesive film B3 includes a thermosetting resin. The thermosetting resin is cured by three-dimensionally crosslinking with heat.

  Examples of the thermosetting resin include epoxy resin, bismaleimide resin, triazine resin, polyimide resin, polyamide resin, cyanoacrylate resin, phenol resin, unsaturated polyester resin, melamine resin, urea resin, polyurethane resin, polyisocyanate resin, furan. Examples thereof include resins, resorcinol resins, xylene resins, benzoguanamine resins, diallyl phthalate resins, silicone resins, polyvinyl butyral resins, siloxane-modified epoxy resins, siloxane-modified polyamideimide resins, and acrylate resins. These can be used alone or as a mixture of two or more.

The adhesive film B3 may include a curing agent for promoting the curing reaction.
The adhesive film B3 preferably contains a latent curing agent in order to achieve both high reactivity and storage stability.

  The adhesive film B3 may include a thermoplastic resin. The thermoplastic resin includes polyester resin, polyether resin, polyamide resin, polyamideimide resin, polyimide resin, polyarylate resin, polyvinyl butyral resin, polyurethane resin, phenoxy resin, polyacrylate resin, polybutadiene, acrylonitrile butadiene copolymer (NBR). ), Acrylonitrile butadiene rubber styrene resin (ABS), styrene butadiene copolymer (SBR), acrylic acid copolymer and the like.

  These can be used alone or in combination of two or more. Among these, a thermoplastic resin having a softening point in the vicinity of room temperature is preferable in order to ensure stickability to the semiconductor wafer 10, and an acrylic acid copolymer containing glycidyl methacrylate as a raw material is preferable.

  A filler (inorganic fine particles) for reducing the linear expansion coefficient may be added to the adhesive film B3. Such fillers may be crystalline or non-crystalline. When the linear expansion coefficient after curing of the adhesive film B3 is small, thermal deformation is suppressed.

  Therefore, even after the semiconductor chip manufactured from the semiconductor wafer 10 is mounted on the wiring board, the electrical connection between the protruding electrode A3 and the wiring of the wiring board can be maintained. The reliability of the semiconductor device manufactured by connecting can be improved.

The adhesive film B3 may include an additive such as a coupling agent. Thereby, the adhesiveness of a semiconductor chip and a wiring board can be improved.
Conductive particles may be dispersed in the adhesive film B3. In this case, it is possible to reduce an adverse effect due to the height variation of the protruding electrode A3.

Further, the connection can be maintained even when the wiring board is difficult to be deformed due to compression, such as a glass substrate.
Furthermore, the adhesive film B3 can be an anisotropic conductive adhesive layer.

  The thickness of the adhesive film B3 is preferably such that the adhesive film B3 can sufficiently fill the space between the semiconductor chip and the wiring board. Usually, if the thickness of the adhesive film B3 is equivalent to the sum of the height of the protruding electrode A3 and the wiring height of the wiring board, the space between the semiconductor chip and the wiring board can be sufficiently filled.

  The dicing tape 42 described above has a base film and an adhesive layer formed on the surface of the base film. The base film is preferably radiolucent, and specifically, plastic, rubber or the like can usually be used.

  Although there is no restriction | limiting in particular as long as a base film permeate | transmits a radiation, When hardening a radiation-curable adhesive by ultraviolet irradiation, what has a good light transmittance can be selected.

  Examples of polymers that can be selected as such a base film include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene- Homopolymer or copolymer of α-olefin such as ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, ionomer or a mixture thereof, polyethylene terephthalate, polycarbonate, polymethyl Engineering plastics such as methacrylate, polyurethane, styrene-ethylene-butene or pentene copolymer, thermoplastic elastomer such as polyamide-polyol copolymer, and mixtures thereof can be listed.

  In order to increase the gap between elements, it is preferable that necking (occurrence of partial elongation due to poor propagation of force that occurs when the base film is stretched radially) is as small as possible, polyurethane, molecular weight and styrene content Styrene-ethylene-butene or pentene copolymer, etc., which are limited to the above, can be exemplified, and it is effective to use a cross-linked base film in order to prevent elongation or deflection during dicing.

  The thickness of the base film is usually suitably from 30 μm to 300 μm from the viewpoint of strong elongation characteristics and radiation transparency. In addition, when the surface opposite to the side where the adhesive layer of the base film is applied is textured or coated with a lubricant, the base film is prevented from blocking, and the friction between the dicing tape and the jig during radial stretching of the dicing tape is reduced. This is preferable because it has the effect of preventing necking.

  On the other hand, in the present invention, the pressure-sensitive adhesive layer comprises a compound (A) having a radiation curable carbon-carbon double bond having an iodine value of 0.5 to 20 in the molecule, a polyisocyanate, a melamine / formaldehyde resin, and an epoxy resin. It comprises an acrylic pressure-sensitive adhesive containing at least one compound (B) selected from In addition, a radiation means ionizing radiations, such as a light ray like an ultraviolet-ray, or an electron beam here.

The compound (A) that is one of the main components of the pressure-sensitive adhesive layer will be described.
The amount of the radiation curable carbon-carbon double bond introduced into the compound (A) is 0.5 to 20, preferably 0.8 to 10 in terms of iodine value. If the iodine value is 0.5 or more, an effect of reducing the adhesive strength after irradiation can be obtained. If the iodine value is 20 or less, the fluidity of the adhesive after irradiation is sufficient and after stretching. Therefore, the problem that the image recognition of each element becomes difficult at the time of pick-up can be suppressed. Furthermore, the compound (A) itself is stable and easy to manufacture.

  The compound (A) preferably has a glass transition point of −70 ° C. to 0 ° C., more preferably −66 ° C. to −28 ° C. If the glass transition point (hereinafter also referred to as “Tg”) is −70 ° C. or higher, the heat resistance against heat associated with radiation irradiation is sufficient, and if it is 0 ° C. or lower, the wafer has a rough surface after dicing. A sufficient effect of preventing scattering of the element can be obtained.

  The compound (A) may be produced by any method, but has, for example, a radiation curable carbon-carbon double bond such as an acrylic copolymer or a methacrylic copolymer, and a functional group. A compound obtained by reacting a compound (I) having a functional group with a compound (II) having a functional group capable of reacting with the functional group is used.

  Among these, the compound (I) having the radiation curable carbon-carbon double bond and the functional group is a monomer having a radiation curable carbon-carbon double bond such as an alkyl acrylate ester or an alkyl methacrylate ester. It can be obtained by copolymerizing (I-1) and a monomer (I-2) having a functional group.

  The monomer (I-1) is a hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate or a monomer having 5 or less carbon atoms, having 6 to 12 carbon atoms. , Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or methacrylates similar to these.

Since a glass transition point becomes so low that a monomer with a large carbon number is used as monomer (I-1), the thing of a desired glass transition point can be produced.
In addition to the glass transition point, it is also possible to add a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene, acrylonitrile for the purpose of improving compatibility and various performances of the monomer (I-1). It is possible within the range of 5% by weight or less of the total weight.

  Examples of the functional group of the monomer (I-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. Specific examples of the monomer (I-2) Examples include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N-methylol. Acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, Glycidyl acrylate Glycidyl methacrylate, allyl glycidyl ether, a portion of the isocyanate groups of the polyisocyanate compound a hydroxyl group or a carboxyl group and a radiation-curable carbon - can enumerate such as those urethanization a monomer having a carbon-carbon double bond.

  In the compound (II), the functional group used is a hydroxyl group or an epoxy group when the functional group of the compound (I), that is, the monomer (I-2) is a carboxyl group or a cyclic acid anhydride group. In the case of a hydroxyl group, a cyclic acid anhydride group and an isocyanate group can be mentioned. In the case of an amino group, an epoxy group and an isocyanate group can be mentioned. In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group, and the like can be exemplified. Specific examples thereof are the same as those listed in the specific examples of the monomer (I-2). Can be enumerated.

  By leaving an unreacted functional group in the reaction between the compound (I) and the compound (II), it is possible to produce what is prescribed in this embodiment with respect to characteristics such as acid value or hydroxyl value.

  In the synthesis of the above compound (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone, ester, alcohol, and aromatic solvents can be used, among which toluene, ethyl acetate , Isopropyl alcohol, benzene, methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, etc., are generally good solvents for acrylic polymers, preferably having a boiling point of 60 to 120 ° C., and α, α′-azobis as a polymerization initiator A radical generator such as an azobis type such as isobutyl nitrile or an organic peroxide type such as benzoyl peroxide is usually used.

At this time, if necessary, a catalyst and a polymerization inhibitor can be used in combination, and the compound (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time.
In terms of adjusting the molecular weight, it is preferable to use a mercaptan or carbon tetrachloride solvent. This reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may be used.

  As described above, the compound (A) can be obtained. In the present embodiment, the molecular weight of the compound (A) is preferably about 300,000 to 1,000,000. If it is less than 300,000, the cohesive force due to radiation irradiation becomes small, and when the semiconductor wafer 10 is diced, the element is likely to be displaced and image recognition may be difficult. In order to prevent the deviation of the element as much as possible, the molecular weight is preferably 400,000 or more. Moreover, when molecular weight exceeds 1 million, there exists a possibility of gelatinizing at the time of a synthesis | combination and a coating. In addition, the molecular weight in this invention is a weight average molecular weight of polystyrene conversion.

In addition, it is preferable that the compound (A) has an OH group having a hydroxyl value of 5 to 100 because the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after radiation irradiation.
Moreover, it is preferable that a compound (A) has a COOH group used as the acid value of 0.5-30.

  Here, if the hydroxyl value of the compound (A) is too low, the effect of reducing the adhesive strength after irradiation is not sufficient, and if it is too high, the fluidity of the adhesive after irradiation tends to be impaired. If the acid value is too low, the effect of improving the tape restoring property is not sufficient, and if it is too high, the fluidity of the pressure-sensitive adhesive tends to be impaired.

Next, the compound (B) which is another main component of the pressure-sensitive adhesive layer will be described.
The compound (B) is a compound selected from at least one of polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and can be used alone or in combination of two or more.

  This compound (B) acts as a cross-linking agent, and the cohesive force of the pressure-sensitive adhesive mainly composed of the compounds (A) and (B) is determined by the cross-linking structure formed as a result of reaction with the compound (A) or the base film. It can be improved after application.

  The polyisocyanates are not particularly limited, and examples thereof include 4,4′-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4′-diphenyl ether diisocyanate, 4,4 ′-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate and the like. Specifically, Coronate L etc. can be used as a commercial item.

As the melamine / formaldehyde resin, specifically, Nicalac MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), Melan (manufactured by Hitachi Chemical Co., Ltd.) and the like can be used as commercially available products.
Furthermore, as the epoxy resin, TETRAD-X (registered trademark, manufactured by Mitsubishi Chemical Corporation) or the like can be used. In this embodiment, it is particularly preferable to use polyisocyanates.

  As addition amount of a compound (B), it is preferable to set it as 0.1-10 weight part with respect to 100 weight part of compounds (A), and it is more preferable to set it as 0.4-3 weight part. If the amount is less than 0.1 parts by weight, the effect of improving the cohesive force tends to be insufficient. If the amount exceeds 10 parts by weight, the curing reaction proceeds rapidly during the formulation and application of the adhesive, and a crosslinked structure is formed. Therefore, workability tends to be impaired.

  Moreover, in this invention, it is preferable that the photoinitiator (C) is contained in the adhesive layer. There is no restriction | limiting in particular about the photoinitiator (C) in which an adhesive layer is contained, A conventionally well-known thing can be used.

  For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone and 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- Examples include anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triallylimidazole dimer (rophine dimer), and acridine compounds. These can be used alone or in combination of two or more.

  As addition amount of a photoinitiator (C), it is preferable to set it as 0.01-5 weight part with respect to 100 weight part of compounds (A), and it is more preferable to set it as 0.01-4 weight part.

Furthermore, the radiation curable pressure-sensitive adhesive layer used in the present invention may contain a tackifier viscosity, a dressing regulator, a surfactant or the like, or other modifiers and conventional components as required.
Although there is no restriction | limiting in particular about the thickness of an adhesive layer, Usually, they are 2 micrometers-50 micrometers.

DESCRIPTION OF SYMBOLS 10 Semiconductor wafer A1 Circuit surface A2 Back surface A3 Protruding electrode 20, 21, 22, 23, 24, 25 Adhesive tape for semiconductor for wafer thinning processing B1 Base film B2 Adhesive layer B3 Adhesive film B4, B5 For wafer thinning processing Support tapes above and below the adhesive tape for semiconductors b1 Diameter

30 Wafer thinning combined semiconductor adhesive tape and wafer bonded product (with support tape)
31 Wafer thinning combined semiconductor adhesive tape and wafer bonded product (no support tape, before thinning)
32 Wafer processing tape laminated body 33 Wafer processing tape 41 Dicing frame 42 Dicing tape 51 Stripping tape 61 Laminated body 62 Dicing blade 63 Semiconductor chip with film as an adhesive 71 Support body 72 Electrode or wiring

Claims (3)

Preparing a semiconductor wafer having a plurality of protruding electrodes protruding from a circuit surface;
By adhering the adhesive tape for semiconductor wafer thinning combined with a base film having an adhesive layer and an adhesive film to the semiconductor wafer with the adhesive film side facing the circuit surface of the semiconductor wafer, A step of forming a laminate in which an adhesive film layer is formed so as to fill between the plurality of protruding electrodes;
Polishing the semiconductor wafer from the back side with a back grinder while applying pressure from the base film side of the laminate, and reducing the thickness of the semiconductor wafer;
A step of attaching a dicing tape to the back side of the laminated body of the wafer thinning combined adhesive tape while the wafer thinning combined semiconductor adhesive tape is still attached to the circuit side of the semiconductor wafer. When,
Peeling the base film from the wafer thinning combined semiconductor adhesive tape;
Dicing the semiconductor wafer and the adhesive film from the adhesive film side to form a plurality of semiconductor chips with adhesive films;
Lifting the semiconductor chip with adhesive film from the dicing tape;
Mounting the semiconductor chip with an adhesive film separated from the dicing tape on a support that is a part of a semiconductor device;
Have
In the step of mounting, connecting the semiconductor chip with an adhesive film and the support body by thermocompression bonding at a temperature of 100 to 250 ° C. for 0.1 to 30 seconds,
A method for manufacturing a semiconductor device.   The method for manufacturing a semiconductor device according to claim 1, wherein the adhesive layer has an adhesive force that is reduced by radiation irradiation. The method for manufacturing a semiconductor device according to claim 1, wherein both or one of the base film and the adhesive film has the same shape and the same size as the semiconductor wafer.

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