JP2003322664A - Probe unit and probe card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe unit and a probe card improving the position accuracy of probe pins to an electrode group placed in a plurality of portions in a body to be inspected. <P>SOLUTION: The probe pins are projecting from the tip of a plurality of bend parts 38 positioned near the electrode group of the body to be inspected 26 with bent posture individually. The probe pins 24 are constituted as a part of lead patterns 32 formed on the substrate 16 surface by a lithography technology and so the relative position accuracy of the individual probe pins is high. The connection part 30 connecting the bend part 38 is fixed to a holder 14 with a plane posture and the relative position relation of mutual base ends of the bend parts 38 is fixed in the constitution. Therefore, when the tip of the bend part is positioned near the electrode group of the body 26 by bending the bend part 39, the mutual position of the tip of each bend part 38 can be determined with high accuracy. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe unit and a probe card for testing continuity of a specimen such as a semiconductor integrated circuit or a liquid crystal panel.

[0002]

2. Description of the Related Art Generally, a semiconductor integrated circuit or a liquid crystal panel is subjected to a continuity test as to whether or not those specimens operate according to specifications. In this continuity test, since each probe pin is pressed against each electrode of the sample, the probe pins are arranged according to the pitch of the electrodes of the sample and project from the substrate. In semiconductor integrated circuits and liquid crystal panels, the pitch of electrodes tends to be narrowed, and the pitch of probe pins is also narrowed accordingly. With the narrowing of the pitch between the sample electrode and the probe pin, it becomes difficult to align the sample electrode and the probe pin.

In Japanese Unexamined Patent Publication No. 8-15318, two substrates are abutted, and a large number of leads extending over them are formed in parallel on the abutted two substrates by plating growth using a lithography technique. Next, a method of manufacturing a probe unit is disclosed in which one of the substrates is peeled off from the lead on the one substrate so that the end portion of the lead is projected from the substrate, and the protruding portion serves as a probe pin. According to this manufacturing method, since the tip of the pattern formed by plating growth using the lithography technique is used as the probe pin, the relative position between the probe pins can be accurately determined.

Further, in the case of simultaneously pressing the probe pins against the electrode groups respectively provided at a plurality of portions of the sample, a plurality of substrates on which a plurality of probe pins are arranged are fixed to a holder, and It is necessary to accurately determine the relative position according to the arrangement of the electrode group of the sample.

FIGS. 13 and 14 show Japanese Patent Laid-Open No. 2000-121.
This corresponds to the drawing disclosed in Japanese Patent No. 670. JP 2
Japanese Patent Publication No. 000-121670 discloses a probe unit 124 for simultaneously contacting probe pins 128 with electrode groups provided at a plurality of portions of a specimen 130. The probe unit 124 includes a plurality of film pieces 1 each provided with a plurality of probe pins 128.
22 and a connecting portion 120 connecting the film pieces 122 to each other. This probe unit 1
In 24, three or more film pieces 122 are provided at predetermined intervals in the circumferential direction with the probe pin 128 facing the center.
Are arranged and these film pieces 122 are connected to each other, which makes it easy to fix the probe unit 124 to the holder 126 by determining the relative position of each film piece 122.

[0006]

However, Japanese Patent Laid-Open No. 2000-2000
-121670 disclosed in the probe unit 1
In No. 24, it is difficult to secure relative positional accuracy among a plurality of substrates for the following reason. The four film pieces 122 corresponding to the substrate are connected to the connecting portion 1 at predetermined intervals in the circumferential direction with the probe pin 128 facing the center.
They are connected to each other at 20. Probe unit 124
When each of the film pieces 122 is fixed to the holder 126, each of the film pieces 122 is fixed to the holder 126 while maintaining a flat and inclined posture by bending each connecting portion 120. As described above, in the probe unit 124 disclosed in Japanese Patent Laid-Open No. 2000-121670, when the probe unit 124 is fixed to the holder 126, the four film pieces 122 are provided.
Each connecting portion 120 for determining the relative position of the is bent. Therefore, by bending the connecting portion 120,
When one film piece 122 is to be fixed to the connecting portion 120, the other film pieces 122 are attracted to the film piece 122 to be fixed. Therefore, with the probe unit 124 disclosed in Japanese Patent Laid-Open No. 2000-121670, it is difficult to secure the positional accuracy of each film piece 122.

The present invention was created in view of the above circumstances, and an object of the present invention is to provide a probe unit and a probe card which improve the positional accuracy of probe pins with respect to electrode groups provided at a plurality of portions of a specimen. And

[0008]

In order to achieve the above object, a probe unit according to the present invention is a probe unit fixed to a holder provided in a probe card, and has a tip in the curved posture in the vicinity of an electrode group of a sample. A plurality of warp portions for positioning, a plurality of notches for individually warping the warp portions, and the base ends of the warp portions are connected to each other, and a part or all of them are fixed to the holder in a generally flat posture. And a lead pattern having a plurality of probe pins protruding from the tip of the warp portion and contacting the electrodes of the specimen, and a lead pattern formed on the surface of the substrate by a lithography technique. It is characterized by being provided. still,
The “flat posture” means a straight posture without bending, whether horizontal or inclined. Since the probe pins protrude from the tips of the plurality of warped portions that are individually positioned in the vicinity of the electrode group of the sample in a bent posture, the probe pins can be brought into contact with the electrodes provided in the plurality of portions of the sample. Since the probe pins are formed as a part of the lead pattern formed on the surface of the substrate by using the lithography technique, the relative positional accuracy between the individual probe pins is high. Incidentally, the lithography does not particularly limit the light source or the radiation source used for the exposure transfer, and examples thereof include photolithography and UV.
Includes lithography, ion beam lithography and the like.
When a part or all of the connecting part that connects the warp part is fixed to the holder, the relative position relationship between the base ends of the warp part is fixed by maintaining the entire connecting part in a flat posture. With this configuration, when the warp portion is warped and the tip of the warp portion is positioned near the electrode group of the sample, the relative position between the tip ends of the warp portions can be determined with high accuracy.
Therefore, according to the probe unit of the present invention,
It is possible to improve the positional accuracy of the probe pin with respect to the electrode groups provided at a plurality of portions of the sample.

Further, the probe unit according to the present invention is characterized in that the notch is formed between the warp portions adjacent to each other or between the warp portion and the connecting portion. By forming a notch between the adjacent warp portions, the adjacent warp portions can be individually warped. By forming the notch between the warp portion and the connecting portion, it is possible to warp only the warp portion while maintaining the flat position of the connecting portion when there are two warp portions.

Further, the warped portion of the probe unit according to the present invention is characterized in that the tip portion is formed thicker than the other portions. By forming the tip portion of the warp portion to be thick, it is possible to prevent the warp of the probe pin array while ensuring the flexibility of the warp portion.

Further, the probe unit according to the present invention is characterized in that the connecting portion is formed to be thicker than the warp portion. By forming the connecting portion to be thick, the rigidity of the connecting portion can be increased and the relative positional relationship between the base ends of the warping portion can be determined with higher accuracy. Further, since the boundary between the connecting portion and the warp portion becomes clear by changing the wall thickness of the connecting portion and the warp portion, it becomes easy to bend the warp portion as designed. Furthermore, it is possible to prevent the warp of the array of probe pins while ensuring the flexibility of the warp portion.

Further, the substrate of the probe unit according to the present invention is a projecting portion projecting from the warped portion to the side opposite to the lead pattern, and contacts the holder to support the warped portion in a warped posture. It is characterized by having a protruding portion for. The protruding portion may be formed at the tip portion of the warp portion so that the tip portion of the warp portion is formed thick.

Further, the warp portion of the probe unit according to the present invention is characterized in that the warped posture is autonomously maintained by a residual stress. Since a member for supporting the warped portion in a warped posture is not required, stress concentration in the warped portion can be reduced.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1A is a sectional view showing a probe card according to an embodiment of the present invention, and FIG. 1B is a plan view showing a probe unit according to the embodiment of the present invention. The probe card 10 includes a holder 14 and a probe unit 20 fixed to the holder 14. The probe unit 20 is a wafer in which the lead pattern 32 is formed on the surface of the substrate 16 by using the lithography technique.

First, the structure of the probe unit 20 will be described. The material of the substrate 16 is zirconia,
An insulating material such as alumina, glass, synthetic resin, or glass ceramic can be used, and a conductive material such as iron-nickel alloy, silicon carbide, AlTiC, silicon, or stainless steel may be used. When using a conductive material for the substrate 16, an insulating film such as silicon dioxide, alumina, an organic insulating film, or a resin is formed between the lead pattern 32 and the conductive material. Zirconia is particularly preferable as the material of the substrate 16. Zirconia has high mechanical strength and fracture toughness, and since it has a thermal expansion coefficient close to that of metal, it is suitable for bonding with the lead pattern 32, and has chemical resistance in the step of forming the lead pattern 32 using a lithography technique. In addition, it is excellent in corrosion resistance and is an insulating material. The following table shows the properties of various materials.

[0016]

[Table 1]

As described above, since zirconia has high mechanical strength, fracture toughness, and thermal expansion coefficient and is an insulating material, it is particularly suitable for the present embodiment in which the substrate 16 on which the lead pattern 32 is formed is bent. The maximum strain δmax is calculated by the following formula when the plate material having a length L, a thickness T, and a width B is supported by both ends and is bent by pushing the center of the plate material with a force P. The strain is the maximum strain δmax of zirconia converted into 100 and shown. δmax = PL ³ / 4EBT ³ σmax = 3PL / 2BT ² Therefore, δmax = K × σmax / E (where K = L ² / 6T)

The substrate 16 has a plate shape with a substantially square outline, a substantially square opening 25 is formed in the center, and four notches 36 extend from the opening 25 toward each corner. The length of one side of the substrate 16 is, for example, 65.7 mm, and the length of one side of the opening 25 is, for example, 9.5 mm. The board 16 includes functionally independent components such as a warp portion 38, a connecting portion 30, and a notch 36.

The connecting portion 30 is an element connecting the base ends of the warp portion 38, and when fixed to the holder 14,
It is an element that maintains a flat posture without bending. The posture of the connecting portion 30 may be horizontal or inclined as long as it is flat. In FIG. 1, the frame-shaped portion outside the chain double-dashed line corresponds to the connecting portion 30. Connection part 30
If it is not bent and maintains a flat posture, it is easy to accurately position the warp portion 38 and fix the connecting portion 30 to the holder 14, and therefore the connecting portion 30 has sufficient rigidity. It is important to let them do it. Further, since the connecting portion 30 fixed to the holder 14 is not deformed even when the warp portion 38 is bent, even if one warp portion 38 is bent, the other warp portion 38 is affected by the bending and is not bent. Warp part 38
Will not be attracted to. Therefore, the warp portion 38
Even in the bent state, the relative position between the warp portions 38 can be accurately determined.

The warp portion 38 corresponds to a portion inside the two-dot chain line shown in FIG. Four warped portions 38 are formed so as to be spaced apart from each other in the circumferential direction, and their base ends are connected to the connecting portion 30, so that the relative positional relationship of the base ends of the four warped portions 38 is fixed. A notch 36 separates the warp portions 38 adjacent to each other. Therefore, the warp portion 38
Even if one of them deforms, the warp 38 adjacent to it
However, it does not deform accordingly. That is, the notch 36 has a function of individually bending each warp portion 38. A plurality of small holes 31 may be formed in the portion of the warp portion 38 closest to the connecting portion 30. By forming the small hole 31, the boundary between the warp portion 38 and the connecting portion 30 is defined as designed,
It is possible to eliminate variations in the warp portion 38.

FIG. 2 is a schematic partial sectional view of the probe unit 20 according to the embodiment of the present invention. The wall thickness of the warp portion 38 may be uniform as shown in FIGS. 2 (A), 2 (G) and 2 (H), or may be made thinner toward the tip as shown in FIGS. 2 (B) and 2 (C). 2B,
It may be changed stepwise as shown in (D), (E), (F) and (I), or may be changed continuously as shown in FIG. 2 (C). When the warp portion 38 has a uniform thickness as shown in FIG. 2A, the thickness of the warp portion 38 is set to 0.1 mm, for example. It is desirable that the thickness of a part of the warp portion 38 is set to 0.2 mm or less so as to prevent toughness fracture or yield. Further, as shown in FIG. 2F, only the tip portion of the warp portion 38 and the connecting portion 30 may be in close contact with the lead pattern 18, and the remaining portion of the warp portion 38 may be separated from the lead pattern 18.

As shown in FIGS. 2D, 2F and 2I, the connecting portion 30 may be made thicker than the warp portion 38 to increase the rigidity of the connecting portion 30. As a result, the rigidity between the warp portion 38 and the connecting portion 30 changes at the boundary portion thereof, so that the boundary between the warp portion 38 and the connecting portion 30 is defined as designed, and variations in the warping method can be prevented. . It is also possible to prevent the warp portion 38 from warping in the width direction (the direction perpendicular to the paper surface in FIG. 2).

Further, as shown in FIGS. 2 (E), (F) and (I), the tip portion of the warp portion 38 supporting the base end of the probe pin 24 is preferably made thicker than other portions. Warp part 38
If the whole is made thin, the warp portion 38 can be largely warped, while the tip end portion thereof is easily warped in the width direction. Since the warp in the width direction is prevented by making the tip portion of the warp portion 38 thick, it is possible to prevent the pitch of the probe pins 24 and the height of the tip (vertical direction in FIG. 2) from varying.

When the warp portion 38 and the connecting portion 30 are partially made thick, as shown in FIG. 2 (I), the reinforcing member 2 is used.
The 9, 114 may be glued to a plate of uniform thickness. Also,
As shown in FIG. 2G, the notch 39 is formed in the portion of the warp portion 38 closest to the connecting portion 30, so that the warp portion 38 is formed.
The boundary between the connecting portion 30 and the connecting portion 30 is defined as designed, and the warp portion 3
It is possible to eliminate the variation in the warp of No. 8. Further, as shown in FIG. 2 (H), by inserting a large number of notches 39 in the warp portion 38, the warp portion 38 can be maintained while maintaining rigidity in the width direction.
Can be greatly warped.

The notch 36 shown in FIG. 1 extends from the center of the substrate 16 to a position of, for example, 25.3 mm from the opening 25 in the corner direction, and has a width of, for example, 1 mm. The tip of the notch 36 may be rounded. This is because if the warp portion 38 is bent, stress tends to concentrate near the tip of the notch 36, and the stress concentration is relaxed. Further, the shape of the notch 36 is not limited to the slit shape shown in FIG. 1, and may be any shape as long as it realizes the function of individually bending each warp portion 38, for example, FIG. It may have a shape as shown in FIG. As shown in FIG. 3A, by making the front end side (corner side) of the notch 36 wider than the base end side (opening side), the stress concentration generated in the substrate 16 can be further alleviated. .

As shown in FIG. 1, the substrate 16 may be provided with a positioning hole 34 for positioning when the probe unit 20 is attached to the holder 14. If the positioning hole 34 is used, it becomes easy to position and fix the substrate 16 with respect to the holder 14 with high precision. Further, as will be described later, the dimensional accuracy and the positional accuracy of the positioning hole 34 can be improved by molding the substrate 16 itself using a lithography technique such as photolithography.
The positioning hole 34 is preferably formed in the connecting portion 30, and is formed so that the center thereof is located at a position 36 mm away from the center of the substrate 16 in the corner direction.

The lead pattern 32 is composed of a large number of leads 18 formed on the surface of the substrate 16. As a plating material for the lead pattern 32, nickel or a nickel alloy such as nickel-tungsten, nickel iron, or the like is used in order to provide the probe pin 24 with appropriate hardness and elasticity.
Alternatively, metallic glass is used. The thickness of the lead pattern 32 is, eg, 0.01 mm. The lead 18 is the connecting portion 3
It is formed so as to straddle 0 and the warp portion 38. Lead 18
Of the warp 38 projects from the tip of the warp 38 into the opening 25. The tip portion of the lead 18 protruding from the tip of the warp portion 38 constitutes the probe pin 24. The length of the probe pin 24 is set to 0.4 mm, for example. A large number of probe pins 24 protruding from each warp portion 38 in a comb shape.
Are arranged in parallel to each other with high precision and at a uniform pitch. The probe pins 24 protruding from the four warp portions 38 extend in directions intersecting with each other in a cross shape. The leads 18 arranged in each warp portion 38 may or may not be electrically connected to each other. Those that are electrically connected to each other are used in a plunger type probe unit in which a sample temporarily conducts an energization test of a plurality of electrodes derived from the same component such as a liquid crystal panel.

The configuration of the probe unit 20 has been described above. Next, a manufacturing process of the probe unit 20 will be described. The five manufacturing processes will be disclosed below.

(First Manufacturing Process) FIG. 4 is a schematic sectional view showing the first manufacturing process. First, the recess 42 is formed on one surface of the substrate 16. The recess 42 becomes the opening 25 and the notch 36 shown in FIG. 1 through the subsequent steps. The recess 42 may be formed in an annular shape so as to frame the opening 25, or may be formed in a shape that matches the opening 25 and the notch 36 from the beginning. FIG. 4 shows a manufacturing process for forming the recess 42 in an annular shape. When the substrate 16 is made of a conductive material, it is necessary to form an insulating film on the surface of the substrate 16 before forming the recess 42 to insulate the lead pattern 32 formed in the subsequent step from the substrate 16.

Next, a sacrificial film 44 is formed in the recess 42.
A metal may be used for the sacrificial film 44, a resin such as epoxy or urethane may be used, or an inorganic salt such as calcium carbonate may be used. When a metal is used for the sacrificial film 44, a different kind of metal from the lead pattern 32, for example, copper is used. When copper is used for the sacrificial film 44, a chromium film is formed as an adhesion layer on the underlying layer by sputtering, and a copper film is formed thereon by sputtering. Alternatively, the metal sacrificial film 44 can be formed by direct electroless plating without providing such a base layer. When a resin is used for the sacrificial film 44, glass, ceramic, metal or the like is used for the substrate 16 so that the sacrificial film 44 can be selectively removed in a subsequent process. Sacrificial film 44 using resin
In the case of forming, the time required for forming can be significantly shortened as compared with the case of forming the sacrificial film 44 by plating.

Next, the surfaces of the sacrificial film 44 and the substrate 16 are polished to flatten the surfaces of the sacrificial film 44 and the substrate 16 as shown in FIG.
4 is left.

Next, a base film (not shown) of the lead pattern 32 is formed on the entire polished surface. Next, the underlying film is covered with a resist film having an opening that exposes the portion where the lead pattern 32 shown in FIG. 1 is formed. At this time, FIG. 4 (B)
As shown in FIG. 3, the base film is exposed so that the portion corresponding to the probe pin 24 is formed on the sacrificial film 44. The lead pattern 32 is formed on the base film by electroplating the opening of the resist film with a known plating solution for iron and nickel based on sulfuric acid, for example.
Instead of electroplating using a resist, a conductive film may be formed on the entire surface of the substrate 16 by plating and the conductive film may be etched to form the lead pattern 32. Alternatively, a conductive paste may be printed on the substrate 16. Then, the lead pattern 32 may be formed. By forming the lead pattern 32 using the lithography technique in this way, the lead pattern 32 is formed.
High dimensional accuracy can be secured. Further, by integrating the substrate 16 and the lead pattern 32 from the molding of the lead pattern 32, the substrate 16 and the lead pattern 32 can be positioned with relatively high accuracy. Next, the underlying film and the resist which are not covered with the lead pattern 32 are removed by ion milling or the like.

Next, as shown in FIG. 4C, the back surface of the substrate 16 is cut off to expose the sacrificial film 44 from the back surface of the substrate 16. The surface on which the lead pattern 32 is formed is the substrate 16
The surface of Specifically, for example, the substrate 16 is cut off as follows. With the surface of the substrate 16 turned down, the substrate 16 is temporarily fixed on the work board with wax, adhesive tape, or the like. Next, the back surface of the substrate 16 is cut to a thickness of 0.1 mm, for example, by mechanical polishing using a grindstone or sandblast. Chemical polishing may be used instead of mechanical polishing. After that, a reinforcing plate may be fixed to the back surface of the substrate 16 whose strength has decreased to reinforce the substrate 16. Next, the substrate 16 is peeled from the work board, and the wax is removed from the substrate 16 by a cleaning liquid such as NMP or a surfactant, or ultrasonic cleaning.

Next, when the sacrificial film 44 is removed as shown in FIG. 4D, the central portion of the substrate 16 left in the ring-shaped inner portion of the sacrificial film 44 is separated from the other portions. . As a result, the opening 25 and the notch 36 shown in FIG.
Is obtained, and the probe unit 20 having the probe pins 24 protruding from the substrate 16 is obtained. When the sacrificial film 44 is made of metal, it is removed by etching. When the sacrificial film 44 is a resin, it is removed by dissolution with a heated solvent such as N-methyl-2-pyrrolidone, ashing, or dry etching. When the sacrificial film 44 is an inorganic substance such as calcium carbonate, it is removed with nitric acid or the like.

(Second Manufacturing Process) FIG. 5 is a schematic sectional view showing the second manufacturing process. The difference from the first manufacturing process is that instead of cutting the substrate 16, the substrate 16 having the opening 25 and the notch 36 shown in FIG. In order to compensate for this, the lead pattern 32 is formed on the substrate 16 attached to the base plate 58.

First, the substrate 16 having the opening 25 and the notch 36 shown in FIG. 1 is formed. The thickness of the substrate 16 is, eg, 0.1 mm. The substrate 16 is not limited to a processing method with high dimensional accuracy using a lithography technique, but may be formed using a processing method with relatively low dimensional accuracy, such as cutting. Next, the substrate 16 is bonded to the base plate 58. As the base plate 58, for example, a copper plate or a glass plate coated with copper is used.

Then, a sacrificial film 56 is formed in the opening of the substrate 16 as shown in FIG. 5A by the same method as the first manufacturing process. Next, the lead pattern 32 is formed as shown in FIG. 5B by using the lithography technique in the same manner as the first manufacturing process. Next, as shown in FIG. 5C, the substrate 16 is peeled from the base plate 58. When a copper plate is used for the base plate 58, the base plate 58 may be removed by etching. Next, in the same manner as the first manufacturing process, as shown in FIG.
As shown in (D), the sacrificial film 56 is removed to obtain the probe unit 20.

(Third Manufacturing Process) FIG. 6 is a schematic sectional view showing the third manufacturing process. The difference from the first and second manufacturing processes is that the material of the substrate 16 is silicon and the opening 25 and the notch 36 shown in FIG. 1 are formed by anisotropic etching of silicon without using a sacrificial film. It is a point.

First, as shown in FIG. 6A, the substrate 1
An insulating film 66 is formed on the surface of 6. The insulating film 66 may be formed of, for example, a silicon oxide film formed by thermally oxidizing the surface of the substrate 16, or may be formed by laminating an insulating material on the substrate surface by sputtering. The insulating film is not necessary if the silicon forming the substrate 16 has a sufficiently large resistance.

Next, as shown in FIG. 6B, the insulating film 66
A lead pattern 32 is formed on the surface of the. The method of forming the lead pattern 32 is similar to the first and second manufacturing processes.

Next, as shown in FIG. 6C, after performing known anisotropic etching for removing silicon, RIE (Reactive Ion Etching) or isotropic ion etching for removing the insulating film is performed. By forming the openings 25 and the notches 36 shown in FIG.
The probe pin 24 from the probe unit 2
Get 0.

(Fourth Manufacturing Process) FIG. 7 is a schematic sectional view showing the fourth manufacturing process. First, the metal thin film 82 is formed on the surface of the base plate 84 by sputtering, vacuum deposition, ion plating or the like. As the material of the base plate 84, for example, glass, synthetic resin, ceramic, silicon, metal or the like is used. Copper, copper / chromium, or the like is used as the material of the metal thin film 82. In particular, when copper / chromium is used as the material of the substrate 16 in the subsequent step, a chromium thin film is formed on the base plate 84 by sputtering to form an adhesion film, and a copper thin film is formed thereon by sputtering.

Next, a photoresist is applied on the surface of the metal thin film 82, a mask having a predetermined shape is placed on the surface of the photoresist, and a development process is performed to remove unnecessary photoresist, as shown in FIG. A first resist film 80 having an opening 76 corresponding to the shape of the substrate 16 is formed on the surface of the metal thin film 82. The first resist film 80 may have a shape in which the positioning hole 34 shown in FIG. 1 is formed in the substrate 16 in a subsequent process. When the substrate 16 is molded using a photoresist, it can be molded with high dimensional accuracy, so that the probe unit 2 can be mounted with high accuracy when assembled in the holder 14.
0 can be positioned. Therefore, even if the sample has a narrow electrode pitch, the continuity test can be accurately performed.

Next, as shown in FIG. 7A, the surface of the metal thin film 82 exposed from the opening of the first resist film 80 is electroplated to form a substrate in the opening of the first resist film 80. 16 is formed.

Next, as shown in FIG. 7B, sputtering and CV are performed on the surfaces of the first resist film 80 and the substrate 16.
The insulating film 86 is formed of D or the like. The insulating film 86 is the substrate 16
It insulates the lead pattern 32 formed in the subsequent process. The material of the insulating film 86 is silicon dioxide,
Alumina or the like is used. The thickness of the insulating film 86 is, for example, 0.
It is set to 1 to 20 μm.

Next, as shown in FIG. 7C, the first resist film 80 is removed. When removing the first resist film 80, for example, dipping in N-methyl-2-pyrrolidone,
Sonicate at 85 ° C.

Next, as shown in FIG. 7D, a copper sacrificial film 88 is formed by electroplating on the surface of the metal thin film 82 exposed by removing the first resist film 80. At this time, the sacrificial film 88 is made thicker than the combined thickness of the substrate 16 and the insulating film 86. Next, as shown in FIG. 7E, the sacrificial film 88 is polished together with the insulating film 86 to flatten the sacrificial film 88 and the insulating film 86.

Next, as shown in FIG. 7F, the insulating film 86
A base film 90 of the lead pattern 32 is formed on the surface of the sacrificial film 88 by sputtering. The material of the base film 90 is, for example, titanium / nickel-iron. The base film 90 is for forming a high-resolution second resist film 92 in the next step. By forming the base film 90 having good wettability with the photoresist, a high resolution second resist film can be formed. In this case, for example, a titanium adhesion film is formed by sputtering, and a nickel-iron film is formed thereon by sputtering.

Next, as shown in FIG. 7G, the base film 90
1 is coated with a photoresist, a mask having a predetermined shape is arranged on the surface of the photoresist, and a development process is performed to remove unnecessary photoresist, and an opening corresponding to the shape of the lead pattern 32 shown in FIG. A second resist film 92 having a portion 91 is formed on the surface of the base film 90.

Next, as shown in FIG. 7H, a known sulfuric acid-based plating solution for iron and nickel is used on the surface of the base film 90 exposed from the opening 91 of the second resist film 92. Then, electroplating is performed to form the lead pattern 32 in the opening of the second resist film 92. By forming the lead pattern 32 using the photoresist in this way, high dimensional accuracy of the lead pattern 32 can be ensured, and by integrating the substrate 16 and the lead pattern 32, the substrate 16 and the lead pattern 32 are relatively disposed. Positioning can be performed with high accuracy.

Next, as shown in FIG. 7I, the second resist film 92 is removed. When removing the second resist film 92, for example, dipping in N-methyl-2-pyrrolidone,
Sonicate at 85 ° C.

Next, as shown in FIG. 7 (J), the underlying film 90 not covered with the lead pattern 32 is removed by ion milling, and the underlying film 90 and the lead pattern 3 are removed.
Match 2 shapes.

Next, as shown in FIG. 7K, the lead pattern 32 on the substrate 16, that is, the lead pattern 3 is formed.
The lead portion other than the second probe pin 24 is covered with the protective film 96. The protective film 96 includes the lead pattern 32 and the substrate 1.
The adhesiveness with 6 and the lead pattern 32 are protected. The protective film 96 may be formed, for example, by applying a photosensitive polyimide, an ultraviolet curable adhesive, a cardo type insulating film, a photoresist or the like to the corresponding portion and curing it, or by applying a dry film or the like. May be.

Next, as shown in FIG. 7L, the metal thin film 82 and the sacrificial film 88 are dissolved with an etching solution that preferentially dissolves copper, and the substrate 16 integrated with the lead pattern 32 is removed from the base plate 84. The probe unit 20 is obtained by peeling.

(Fifth Manufacturing Process) In the fifth manufacturing process, the substrate 16 and the lead pattern 32 are integrally formed by forming the substrate 16 and the lead pattern 32 by separate processes and then adhering them to each other. The converted probe unit 20 is obtained. FIG. 8 is a cross-sectional view showing the probe card 10 provided with the probe unit 20 obtained in the fifth manufacturing process.

The lead pattern 32 is formed by a process different from that of the substrate 16 as follows, for example. First, a copper thin film is formed by plating on the surface of a base plate such as stainless steel. Next, a resist film is formed on the surface of the copper thin film, and the resist film is partially exposed by using a mask to form an opening corresponding to the lead pattern 32 to partially expose the copper thin film. Nickel, nickel alloy, metallic glass or the like is plated and grown in the opening thus formed, and then the resist film is removed to form the lead pattern 32.

Next, the substrate 16 formed by a process different from that of the substrate 16 is adhered to the lead pattern 32, and the substrate 16 and the lead pattern 3 are formed by the resin layer 17 in which the adhesive is cured.
And 2 are integrally connected. The substrate 16 may have a two-layer structure in which a resin layer such as polyimide and a metal layer such as copper and nickel are laminated and integrated as shown in FIG. 8, or zirconia, alumina, glass, glass ceramic, etc. It may have a single-layer structure made of the above inorganic insulating material. In the case of a two-layer structure, the lead pattern 32 has the substrate 16
Adhere the resin layer of.

Next, after the substrate 16, the lead pattern 32 and the copper thin film are peeled off from the base plate, the copper thin film is removed by etching to obtain the probe unit 20.

The manufacturing process of the probe unit 20 has been described above. Next, the structure of the probe card 10 in which the probe unit 20 is fixed to the holder 14 will be described.

As shown in FIG. 1A, the connecting portion 30 corresponding to the outer peripheral portion of the substrate 16 is fixed to the holder 14. As a means for fixing the connecting portion 30 to the holder 14, the entire connecting portion 30 may be adhered to the holder 14 with an adhesive,
Only a part of the connecting portion 30 may be adhered to the holder 14, or the connecting portion 30 may be fastened to the holder 14 with a bolt or a nut. Since the probe unit 20 is fixed to the holder 14 without bending the connecting portion 30 that connects the respective warp portions 38, the respective warp portions 38 are mutually positioned with high accuracy and the probe unit 20 is fixed to the holder 14. be able to. Further, since the connecting portion 30 fixed to the holder 14 is flat, it is easy to accurately position the probe unit 20 on the holder 14. When the positioning hole 34 is formed in the substrate 16, the positioning pin 22 is formed in the holder 14, and the positioning pin 22 is inserted in the positioning hole 34, the probe unit 20 is provided in the holder 14.
It is even easier to accurately position and secure.

When the substrate 16 is thin and its strength is insufficient, the reinforcing frame 11 is provided on the back surface of the substrate 16 before the probe unit 20 is fixed to the holder 14 as shown in FIG.
4 is adhered to prevent the probe unit 20 from bending when it is fixed to the holder 14.

The probe unit 20 is fixed to the holder 14 in a posture in which each warp portion 38 is warped. Here, four configurations will be described in which the probe unit 20 is fixed to the holder 14 and the warped portions 38 are maintained in a bent posture.

(First Structure) The first structure is shown in FIG.
As shown in FIG. 3, the protrusion 12 is formed on the holder 14. By projecting the protrusion 12 from the flat surface 15 to which the connecting portion 30 of the probe unit 20 is fixed and supporting the back surface of the warp 38 by the tip of the protrusion 12, the warped posture of the warp 38 can be maintained. . The height from the flat surface 15 to which the connecting portion 30 is fixed to the tip of the protrusion 12 is, for example, 2.2.
mm. The distance from the position where the flat surface 15 of the holder 14 and the back surface of the substrate 16 separate to the base end of the protrusion 12 is, for example, 1
2.4 mm. As for the warp of the warp portion 38, for example, the probe pin 24 is 14.9 with respect to the flat surface 15 of the holder 14.
Set so that the posture is inclined.

(Second Configuration) The second configuration is shown in FIG.
As shown in (A), the protrusions 116 are formed on the substrate 16 instead of forming the holder 14 into a flat plate shape. The protrusion 116 is protruded from the back surface of the warp 38,
By pressing the tip of 6 to the holder 14, the warped portion of the warped portion 38 can be supported by the warped portion itself. Also,
By providing the protruding portion 116 at the tip of the warp portion 38, the substrate 16 becomes thicker at the tip portion of the warp portion 38, so that the warp of the tip portion of the warp portion 38 is suppressed and the array of the probe pins 24 is warped. To be prevented.

(Third Configuration) The third configuration is shown in FIG.
As shown in (B), the amount of warpage can be adjusted by rotating the screw 118. The tip of the screw 118 is projected from the holder 14, and the projection height is adjusted by rotating the screw 118. With the screw 118 not protruding from the holder 14, the probe unit 2 is attached to the holder 14.
Fixing 0 further facilitates accurate positioning of the probe unit 20 with respect to the holder 14. Screw 11
If a micrometer or a differential screw that moves in the axial direction by the pitch difference between two screws per rotation is used instead of 8, fine adjustment of the warp amount becomes easy.

(Fourth Configuration) The fourth configuration is shown in FIG.
As shown in (C), the warp portion 38 is warped by utilizing the residual stress of the substrate 16. For example, when the front surface of the substrate 16 is ion-milled and the back surface of the substrate 16 is ground with particles, the residual stress due to the grinding using ion milling is smaller than the residual stress due to the grinding with the particles. The warp stress remains after grinding. When the warp portion 38 is warped by the residual stress, stress concentration is unlikely to occur in the warp portion 38, and thus when the material, thickness, shape, etc. of the warp portion 38 are the same, the warp portion 38 can be further warped.

The structure of the probe card 10 has been described above. Next, a method of using the probe card 10 will be described. The electrodes of the lead pattern 32 of the probe card 10 are electrically connected to a flexible printed board of a probe device (not shown) via an anisotropic conductive sheet (not shown). During the continuity test of the sample, the sample 26 such as a semiconductor integrated circuit or a liquid crystal panel is held by the probe device,
The probe pin 24 is pressed against the electrode 28 of 6. When the probe device is driven, an electrical signal for a continuity test is sent to the probe unit 20 through the flexible printed board to test the continuity of the sample.

The embodiments of the present invention have been described above. According to the above-described embodiment, since the probe pins 24 are projected from the tips of the plurality of warp portions 38 that are individually positioned in the vicinity of the electrode group of the sample 26 in a bent posture, the probe pins 24 are provided at the plurality of sites of the sample 26. The probe pin 24 can be brought into contact with the electrode group. Since the probe pin 24 is formed as a part of the lead pattern 32 formed on the surface of the substrate 16 by using the lithography technique, the relative positional accuracy of the individual probe pins 24 is high. Since the connecting portion 30 connecting the warp portion 38 is fixed to the holder 14 in a flat posture and the relative positional relationship between the base ends of the warp portion 38 is fixed, the warp portion 38 is warped. When positioning the tips of the warp portions 38 in the vicinity of the electrode group of the specimen 26, the relative position between the tip ends of the warp portions 38 can be determined with high accuracy. Therefore, according to the probe unit 20 of the present invention, it is possible to improve the positional accuracy of each probe pin 24 with respect to each electrode 28 forming the electrode group provided at a plurality of portions of the sample 26.

In the above-mentioned embodiment, the probe unit has four warped portions, but the number of warped portions is determined according to the arrangement of the electrodes of the sample and is not limited to four. For example, as shown in FIG. 11, the probe unit 20 is provided with two warp portions 38, and a notch 36 is provided between each warp portion 38 and the connecting portion 30 that connects the two warp portions 38.
It may be separated by.

Further, in the above-mentioned embodiment, the connecting portion 30 is formed in a frame shape on the outermost peripheral portion of the substrate 16, but as shown in FIG. The connecting portion 30 may be formed. In FIG. 12, a portion surrounded by a chain double-dashed line corresponds to the connecting portion 30, and a portion inside the connecting portion 30 corresponds to the warp portion 38. Further, in the above-described embodiment, the connecting portion 30 closed in the annular shape is illustrated, but the connecting portion 30 does not necessarily have to be closed in the annular shape. For example, the four warp portions 38 shown in FIG. 1 may be connected at three points and the remaining one point may not be connected.

[Brief description of drawings]

FIG. 1A is a sectional view showing a probe card according to an embodiment of the present invention, and FIG. 1B is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 2 is a schematic partial sectional view of a probe unit according to an embodiment of the present invention.

FIG. 3 is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing the first manufacturing process of the probe unit according to the embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing the second manufacturing process of the probe unit according to the embodiment of the present invention.

FIG. 6 is a schematic sectional view showing a third manufacturing process of the probe unit according to the embodiment of the invention.

FIG. 7 is a schematic cross-sectional view showing the fourth manufacturing process of the probe unit according to the embodiment of the invention.

FIG. 8 is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 9 is a sectional view showing a probe card according to an embodiment of the present invention.

FIG. 10 is a sectional view showing a probe card according to an embodiment of the present invention.

FIG. 11 is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 13 is a plan view showing a known probe unit.

FIG. 14 is a plan view showing a known probe card.

[Explanation of symbols]

10 probe card 14 Holder 16 substrates 18 leads 20 probe units 24 probe pins 25 openings 26 specimens 28 electrodes 30 connecting parts 32 lead pattern 36 Notches 38 Warp 116 protrusion

[Procedure amendment]

[Submission date] May 15, 2002 (2002.5.1)
5)

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1A is a sectional view showing a probe card according to an embodiment of the present invention, and FIG. 1B is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 2 is a schematic partial sectional view of a probe unit according to an embodiment of the present invention.

FIG. 3 is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing the first manufacturing process of the probe unit according to the embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing the second manufacturing process of the probe unit according to the embodiment of the present invention.

FIG. 6 is a schematic sectional view showing a third manufacturing process of the probe unit according to the embodiment of the invention.

FIG. 7 is a schematic cross-sectional view showing the fourth manufacturing process of the probe unit according to the embodiment of the invention.

FIG. 8 is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 9 is a sectional view showing a probe card according to an embodiment of the present invention.

FIG. 10 is a sectional view showing a probe card according to an embodiment of the present invention.

FIG. 11 is a plan view showing a probe unit according to an embodiment of the present invention.

FIG. 12 shows a probe unit according to an embodiment of the present invention.
FIG.

FIG. 13 is a plan view showing a known probe unit.

FIG. 14 is a plan view showing a known probe card.

[Explanation of symbols] 10 probe card 14 Holder 16 substrates 18 leads 20 probe units 24 probe pins 25 openings 26 specimens 28 electrodes 30 connecting parts 32 lead pattern 36 Notches 38 Warp 116 protrusion

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shuichi Sawada             Yamaha stock, 10-1 Nakazawa-machi, Hamamatsu-shi, Shizuoka             In the company F-term (reference) 2G003 AG04 AG20                 2G011 AA15 AB04 AB08 AC06 AC14                       AF07                 4M106 BA01 DD05 DD10

Claims (7)

[Claims] 1. A probe unit fixed to a holder provided in a probe card, comprising: a plurality of warped portions whose tips are positioned in the vicinity of an electrode group of a sample in a warped posture, and for individually warping the warped portions. A substrate having a plurality of cutouts, a connecting portion that connects the base ends of the warped portions and is partially or wholly fixed to the holder in a flat posture, and a substrate that projects from the tip of the warped portion A probe unit, comprising: a plurality of probe pins that come into contact with electrodes; and a lead pattern formed on the surface of the substrate by a lithography technique. 2. The probe unit according to claim 1, wherein the notch is formed between the warp portions adjacent to each other or between the warp portion and the connecting portion. 3. The probe unit according to claim 1, wherein a tip portion of the warped portion is formed thicker than other portions. 4. The probe unit according to claim 1, wherein the connecting portion is formed to be thicker than the warp portion. 5. The substrate has a protrusion that protrudes from the warp portion to the side opposite to the lead pattern, and has a protrusion for abutting the holder and supporting the warp portion in a warped posture. The probe unit according to claim 1, wherein the probe unit is a probe unit. 6. The probe unit according to claim 1, wherein the warp portion autonomously maintains a warped posture with residual stress. 7. A probe card, comprising: the probe unit according to claim 1; and a holder to which the connecting portion is fixed.