JP4074287B2 - Manufacturing method of probe unit - Google Patents

Description

  The present invention relates to a method for manufacturing a probe unit that is connected to an electrode or a terminal portion of an electronic component such as a semiconductor integrated circuit or a liquid crystal panel, and is used for an energization test of the electrode.

Generally, as a product inspection for a semiconductor integrated circuit, a liquid crystal panel, a printed circuit board, and the like, an energization test is performed in order to confirm whether or not these operate according to required specifications.
This energization test is performed by pressing the tip of the probe unit or a protrusion formed in the vicinity thereof onto an electrode arranged in parallel on a semiconductor integrated circuit, a liquid crystal panel, a printed board, or the like. The probe unit used for such an energization test is an “independent wiring” type in which the tip contacts with the pitch of the electrode of the object to be tested so as to correspond to 1: 1 and is energized independently. There is a “plunger” type in which the tip of the unit contacts a plurality of electrodes.
By the way, the electrode layers arranged in parallel to the edge of the glass plate constituting the liquid crystal panel tend to have a finer pitch. In such an energization test of the liquid crystal panel, it is necessary to provide a probe unit having a pitch corresponding to the minute pitch electrode layer on the energization test apparatus side.
At present, the pitch of the electrode layer is 0.1 mm or less, and it is difficult to mechanically punch and form the corresponding probe unit.
For this reason, a method of forming a probe unit by an etching method or a plating method is used.

  As a method of manufacturing such an independent wiring type probe unit, for example, in Japanese Patent No. 2550844, a large number of leads arranged in parallel by connecting a base material with a tie bar are bonded to the surface of an insulating base. Later, a method of cutting and removing the tie bar has been proposed.

  Japanese Patent Publication No. 7-56493 discloses a method of manufacturing an independent wiring type probe unit, in which a conductive contact terminal is etched into a predetermined size and arrangement, and then bonded and fixed to an insulating member. There has been proposed a method of cutting both ends.

Japanese Patent Laid-Open No. 11-337575 discloses a method of manufacturing an independent wiring type probe unit, in which a resist having an arbitrary thickness is coated on an electrodeposited metal plate, and a mask having an arbitrary shape designated on the resist surface. Set and bake, remove unnecessary resist, apply thin copper plating to the part as an electrodeposition base treatment, and form a probe needle of arbitrary thickness by plating growth on this copper plating, electrodeposited metal plate A method has been proposed in which only the copper base is melted to remove the probe needle. Furthermore, when fixing a probe needle to a board | substrate, the method of making a hole in a board | substrate with a drill or a laser and fitting the positioning protrusion provided in the probe needle in this hole is proposed.
Further, "plunger" type probe units have been proposed in JP-A-8-110362 and JP-A-11-64425.
Japanese Patent No. 2555204 Japanese Patent Publication No. 7-56493 JP 11-337575 A JP-A-8-110362 Japanese Patent Laid-Open No. 11-64425

  However, in the method described in Japanese Patent No. 2550844, when bonding the lead onto the insulating base, it is very difficult to place the lead on the insulating base with high accuracy, and the tie bar is cut and removed. However, there was a problem that the lead was damaged.

 Further, according to the method described in Japanese Patent Publication No. 7-56493, when the conductive contact terminal is bonded and fixed on the insulating member, it is very difficult to arrange the conductive contact terminal on the insulating member with high accuracy. There was a problem.

  Further, in the method described in JP-A-11-337575, the thin copper plating applied as a base treatment for electrodeposition is difficult to solve because the contact area with the solvent is small, and it takes a long time to remove the probe needle. There was a problem of need. In addition, it is difficult to drill a hole in a substrate with a drill or a laser with high accuracy, and it is also difficult to arrange a large number of probe needles one by one in a hole in the substrate.

  The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a method of manufacturing a probe unit in which probe pins are arranged on a substrate with high accuracy and holes for attachment to the apparatus are formed with high accuracy. And

The problem is that a sacrificial film is formed on the surface of the substrate, a base film is formed on the surface of the sacrificial film, and a resist in which a probe unit pattern having one or a plurality of pores is opened is formed on the surface of the base film And forming a probe unit pattern comprising a probe pin and a probe holding portion by plating in the opening of the resist, removing the resist and the underlying film under the resist, removing the sacrificial film, This can be solved by the method of manufacturing the obtained probe unit.
Further, the problem is that a sacrificial film is formed on the surface of the substrate, a first resist having an opening of a probe holding portion pattern is formed on the surface of the sacrificial film, and the opening of the first resist is plated by the plating. After forming a probe holding part pattern and subsequently forming an insulating film on the surface of the probe holding part pattern, the first resist is removed to obtain a probe holding part, and the probe holding part on the surface of the sacrificial film is A metal layer is formed by plating on the unformed portion, a base film is formed on the surfaces of the insulating film and the metal layer, and a second resist having a probe pin pattern opened is formed on the surface of the base film. A probe pin pattern is formed by plating in the opening of the second resist, the second resist is removed, the sacrificial film under the second resist is removed, and a probe unit is removed. It can be solved by a manufacturing method of the probe unit obtained.
In addition, the problem is that a first resist in which a sacrificial film is formed on the surface of the substrate, a first base film is formed on the surface of the sacrificial film, and a probe pin pattern is opened on the surface of the first base film. And forming the probe pin pattern in the opening of the first resist by plating, removing the first resist, obtaining the probe pin pattern, and subsequently applying the probe pin pattern to the plating layer. Enclosing and polishing the plated layer to be flush with each other, forming an insulating film on the surface of the plated layer and the probe pin pattern, forming a second underlayer on the surface of the insulating film, A second resist having a probe holding part pattern having one or a plurality of pores is formed on the surface of the base film, and a probe holding part pattern is formed by plating on the opening of the second resist. The second resist, the second base film, the insulating film, and removing the plating layer and the sacrificial layer, can be solved by a manufacturing method of the probe unit obtaining probe unit.

The above problem can be solved by a probe unit in which a plurality of pores are formed in the probe holding part.
It is preferable that the probe holding part is formed by plating in a frame made of resist.
It is preferable that an insulating film is formed on the surface of the probe holding portion formed by plating, and a probe pin is formed on the surface of the insulating film.
It is preferable that the probe holding part and the probe pin are covered with a protective film.
It is preferable that a probe pin made of the same material as the probe holding part is formed on the surface of the probe holding part formed by plating.
It is preferable that the probe pin formed by plating is embedded in the probe holding portion formed of resin.

The present invention will be described in detail below.
FIG. 1 is a schematic cross-sectional view showing an example of a first embodiment of a method for manufacturing a probe unit according to the present invention.
In the probe unit manufacturing method of this embodiment, first, as shown in FIG. 1A, the sacrificial film 2 is formed on the surface of the substrate 1 by sputtering, vacuum deposition, ion plating, or the like. . In the present invention, a sputtering method is preferably used. Next, a base film 3 that forms the base of the probe unit is formed on the surface of the sacrificial film 2 by sputtering.

Although there is no restriction | limiting in particular as the board | substrate 1, The glass plate of about several millimeters thickness, a synthetic resin board, a ceramic board, a silicon | silicone, a metal plate, etc. are used.
The sacrificial film 2 is preferably a copper thin film having a thickness of about 0.1 to 5.0 μm, a copper (Cu) / chromium (Cr) thin film, or the like. In particular, when a copper / chromium thin film is formed as the sacrificial film 2, first, chromium is formed by a sputtering method to form an adhesion layer, and copper is formed thereon by a sputtering method. In this case, the thickness of the chromium thin film is, for example, 0.03 μm, and the thickness of the copper thin film is, for example, about 0.3 μm.

The base film 3 is preferably a titanium (Ti) / nickel (Ni) -iron (Fe) thin film having a thickness of about 0.05 to 0.5 μm. When a titanium / nickel-iron thin film is formed as the base film 3, first, a titanium thin film is formed by a sputtering method to form an adhesion layer, and a nickel-iron thin film is formed thereon by a sputtering method. In this case, the thickness of the titanium thin film is, for example, 0.02 μm, and the thickness of the nickel-iron thin film is, for example, about 0.15 μm.
The underlying film 3 is used because a high-resolution resist film cannot be obtained when a resist film made of a photoresist described later is formed directly on the sacrificial film 2, and is not necessary depending on the type of photoresist. is there. Since the base film 3 has good wettability with a photoresist to be described later, a high-resolution resist film having a high resolution can be formed on the sacrificial film 2 due to the presence of the base film 3.

Next, as shown in FIG. 1B, a photoresist having an arbitrary thickness is applied on the surface of the base film 3, a mask having an arbitrary shape is disposed on the surface of the photoresist, and baking is performed. Development processing is performed to remove unnecessary photoresist, and a resist film 4 having openings of arbitrary probe unit patterns is formed. The thickness of the resist film 4 is preferably 10 to 200 μm.
When the resist film 4 is formed, not only a pattern for forming a probe pin and a probe holding part constituting the probe unit but also a positioning hole or a positioning frame, which will be described later, are formed in the probe holding part. A pattern for forming the positioning portion and a pattern for forming a plurality of pores to be described later can be formed simultaneously.
In addition, if the resist film 4 is formed using a photoresist, the patterns forming the lead groups constituting the probe pins can be formed in parallel with each other at a narrow interval, for example, a uniform pitch. The probe pins formed by using leads have leads formed in parallel with each other at a narrow interval. Similarly, the probe unit formed using the resist film 4 has the probe pin and the probe holding portion positioned with high accuracy. Furthermore, positioning holes and pores can be positioned with high accuracy.

  Next, as shown in FIG. 1C, electroplating is performed on the surface of the base film 3 on which the resist film 4 is not formed using a known plating solution for iron and nickel based on sulfuric acid. Thus, the metal foil 5 made of a nickel alloy or the like and forming a probe unit is formed by plating. At this time, the thickness of the metal foil 5 can be set arbitrarily.

  Next, as shown in FIG. 1D, the resist film 4 is removed. In order to remove the resist film 4, the interface between the resist film 4 and the base film 3 is washed with N-methyl-2-pyrrolidone. At this time, the resist film 4 can be efficiently removed by immersing the laminate composed of the substrate 1 and the resist film 4 in N-methyl-2-pyrrolidone and ultrasonically cleaning at 85 ° C. it can.

  Next, as shown in FIG. 1 (e), the base film 3 in the lower layer of the metal foil 5 and protruding from the metal foil 5 is removed by ion milling, and the base film 3 is the same as the metal foil 5. Form into shape.

  Next, as shown in FIG. 1 (f), the sacrificial film 2 is dissolved with an etching solution that preferentially dissolves copper, and the metal foil 5 and the base film 3 are peeled off from the substrate 1 as a unit, and the metal foil is removed. A probe unit 6 comprising 5 and the base film 3 is obtained.

In the probe unit manufacturing method of this embodiment, in order to integrally form the probe pin and the probe holding portion, there is a step of joining the probe pin and the probe holding portion mechanically or using solder or an adhesive. As a result, the probe pin is not damaged. In addition, the probe pin and the probe holding portion can be positioned and joined with high accuracy.
In addition, since it is not necessary to physically cut out the probe holding portion, the accuracy of the outer dimensions is high, and there is no possibility of damage to the probe pin that occurs when cutting out.

FIG. 2 is a plan view showing an example of the probe unit manufactured in the first embodiment of the probe unit manufacturing method of the present invention.
The probe unit 6 is formed so that a large number of leads 7 are arranged in parallel with each other at narrow intervals with high accuracy, and are connected to a comb-shaped probe pin 8 and one end of the probe pin 8 vertically. The probe holding portion 9 is formed integrally with these. Moreover, the probe pin 8 and the probe holding part 9 exist on the same plane. Furthermore, the probe pin 8 and the probe holding part 9 are formed of the same material such as a nickel alloy formed by plating growth.
In the probe unit of this example, since the probe pin 8 and the probe holding part 9 are made of the same metal, there is conduction between the leads 7. Therefore, the probe unit of this example is preferably used as a plunger type probe unit that conducts a current test of a plurality of electrodes derived from the same component such as a liquid crystal panel at a time.

The probe holding part 9 may be formed with positioning holes 10 and 10 for positioning when the probe unit 6 is attached to various devices. The size, shape, position and the like of the positioning hole 10 are appropriately set according to various devices to which the probe unit 6 is attached. For example, the present invention is not limited to a plurality of round holes as shown in FIG.
Further, since the positioning hole 10 is positioned with high accuracy using a photoresist as described above, it can be positioned with high accuracy when the probe unit 6 is attached to various devices. Therefore, an energization test for a liquid crystal panel or the like can be performed with high accuracy.

  Moreover, you may form many pores 11, 11, ... in the probe holding | maintenance part 9. FIG. In the method for manufacturing a probe unit according to the present invention, the pores 11 are sacrificed with the etching solution when the sacrificial film 2 is dissolved with the etching solution and the metal foil 5 and the base film 3 are peeled off from the substrate 1 as a unit. This is to increase the contact area with the film 2. Accordingly, the position where the pores 11 are formed and the size and number of the pores 11 are not particularly limited, but the etching solution is formed so as to be in contact with the entire sacrificial film 2 below the base film 3. It is preferred that In this way, the dissolution time of the sacrificial film 2 is greatly shortened.

3 and 4 are cross-sectional schematic views showing an example of the second embodiment of the probe unit manufacturing method of the present invention. 3 (a-1),..., (F-1) are schematic views of cross sections parallel to the longitudinal direction of the probe unit. 3 (a-2),..., (F-2) is a schematic cross-sectional view illustrating a process of forming a positioning hole in the probe holding portion of the probe unit. 4 (a-1),..., (F-1) are schematic views of cross sections parallel to the longitudinal direction of the probe unit. 4 (a-2),..., (F-2) are schematic cross-sectional views showing the process of forming the positioning hole of the probe holding portion of the probe unit.
In the probe unit manufacturing method of this embodiment, first, as shown in FIG. 3A, a sacrificial film 22 is formed on the surface of the substrate 21 by sputtering, vacuum evaporation, ion plating, or the like. . In the present invention, a sputtering method is preferably used. Next, a photoresist having an arbitrary thickness is applied on the surface of the sacrificial film 22, a mask having an arbitrary shape is disposed on the surface of the photoresist, and baking and development are performed, so that unnecessary photoresist is formed. Is removed, and a first resist film 23 in which a pattern of a probe holding portion of an arbitrary probe unit is opened is formed. Moreover, it is preferable that the thickness of the 1st resist film 23 shall be 10-200 micrometers. Next, the surface of the sacrificial film 22 on which the first resist film 23 is not formed is electroplated by using a known iron or nickel plating solution based on sulfuric acid, thereby causing plating growth. The first metal foil 24 made of nickel alloy or the like and forming the probe holding portion of the probe unit is formed. At this time, the thickness of the first metal foil 24 can be arbitrarily set.

Although there is no restriction | limiting in particular as the board | substrate 21, A glass plate, a synthetic resin board, a ceramic board, a silicon | silicone, a metal plate, etc. about several millimeters thick are used.
The sacrificial film 22 is preferably a copper thin film having a thickness of about 0.1 to 5 μm, a copper (Cu) / chromium (Cr) thin film, or the like. In particular, when a copper / chromium thin film is formed as the sacrificial film 22, first, chromium is formed by a sputtering method to form an adhesion layer, and copper is formed thereon by a sputtering method. In this case, the thickness of the chromium thin film is, for example, 0.03 μm, and the thickness of the copper thin film is, for example, about 0.3 μm.

  When the first resist film 23 is formed, not only a resist film shape for forming the probe holding portion but also a shape for forming one or a plurality of positioning holes or pores to be described later on the probe holding portion are formed at the same time. It may be formed.

  Next, as shown in FIG. 3B, an insulating film 25 is formed on the surfaces of the first resist film 23 and the first metal foil 24. The insulating film 25 is made of a silicon dioxide film, an alumina film, or the like formed by a sputtering method, a CVD method, or the like, and has a thickness of about 0.1 to 20 μm. By the way, the insulating film 25 is provided to insulate the first metal foil 24 from a probe pin described later formed on the first metal foil 24.

  Next, as shown in FIG. 3 (c), the first resist film 23 is removed, and a probe holder 26 made of a first metal foil 24 and an insulating film 25 is formed on the surface of the sacrificial film 22. obtain. In order to remove the first resist film 23, the interface between the first resist film 23 and the sacrificial film 22 is washed with N-methyl-2-pyrrolidone. At this time, if the laminate including the substrate 21 and the first resist film 23 is immersed in N-methyl-2-pyrrolidone and ultrasonically cleaned at 85 ° C., the first resist film 23 is removed. Can be done efficiently.

Next, as shown in FIG. 3D, electroplating is performed on the portion of the sacrificial film 22 after the first resist film 23 is removed, that is, on the entire surface where the first metal foil 24 is not formed. As a result, the copper plating layer 27 is formed by plating and copper plating. At this time, the thickness of the copper plating layer 27 is set to be larger than the thickness of the probe holding portion 26.
Next, as shown in FIG. 3E, the copper plating layer 27 is polished together with the probe holding portion 26 so that they are flush with each other.

Next, as shown in FIG. 3F, a base film 28 serving as a base for the probe unit is formed on the surfaces of the probe holding portion 26 and the copper plating layer 27 by sputtering.
The base film 28 is preferably a titanium (Ti) / nickel (Ni) -iron (Fe) thin film having a thickness of about 0.05 to 0.5 μm. When a titanium / nickel-iron thin film is formed as the base film 28, first, a titanium thin film is formed by a sputtering method to form an adhesion layer, and a nickel-iron thin film is formed thereon by a sputtering method. In this case, the thickness of the titanium thin film is, for example, 0.02 μm, and the thickness of the nickel-iron thin film is, for example, about 0.15 μm.

  Next, as shown in FIG. 4A, a photoresist having an arbitrary thickness is applied on the surface of the base film 28, a mask having an arbitrary shape is disposed on the surface of the photoresist, and baking is performed. A development process is performed to remove unnecessary photoresist, and a second resist film 29 having an arbitrary probe pin pattern is formed. The thickness of the second resist film 29 is preferably 10 to 200 μm. Further, in addition to the probe pin pattern, the pattern of the positioning portion that determines the attachment position can be opened simultaneously.

  Next, as shown in FIG. 4B, the surface of the base film 28 on which the second resist film 29 is not formed is electrically charged using a known iron or nickel plating solution based on sulfuric acid. By plating, a second metal foil 30 made of a nickel alloy or the like and forming a probe pin is formed by plating. At this time, the thickness of the second metal foil 30 can be arbitrarily set.

Next, as shown in FIG. 4C, the second resist film 29 is removed. In order to remove the second resist film 29, the interface between the second resist film 29 and the base film 28 is washed with N-methyl-2-pyrrolidone. At this time, if the laminate composed of the substrate 21 and the second resist film 29 is immersed in N-methyl-2-pyrrolidone and ultrasonically cleaned at 85 ° C., the second resist film 29 is removed. Can be done efficiently.
Next, as shown in FIG. 4D, the base film 28 in the lower layer of the second metal foil 30 and protruding from the second metal foil 30 is removed by ion milling, and the base film 28 is removed. Is formed in the same shape as the second metal foil 30, and the probe pin 31 composed of the base film 28 and the second metal foil 30 is obtained on the surface of the probe holding portion 26.

  Next, as shown in FIG. 4E, in order to improve the adhesion between the probe holding part 26 and the probe pin 31, and to protect the wiring of the probe unit, the probe pin 31 comes into close contact with the probe holding part 26. The covered portion is covered with a protective film 32. In this case, a photosensitive polyimide, an ultraviolet curable adhesive, a cardo type insulating film, a photoresist, or the like is applied to the portion where the probe pin 31 is in close contact with the probe holding portion 26 and cured, or a dry film or the like is used. Is attached to form the protective film 32.

  Next, as shown in FIG. 4 (f), the sacrificial film 22 and the copper plating layer 27 are dissolved with an etching solution that preferentially dissolves copper, and the probe pin 31 and the probe holding part 26 remain integrated with the substrate 21. The probe unit 33 including the probe pin 31 and the probe holding portion 26 is obtained.

In the probe unit manufacturing method of this embodiment, since the probe pin 31 and the probe holding portion 26 are integrally formed by laminating various thin films, the probe is mechanically or using a solder or an adhesive. Since there is no process of joining the pin 31 and the probe holding part 26, the probe pin 31 is not damaged. Moreover, the probe pin 31 and the probe holding part 26 can be positioned and joined with high accuracy.
Further, since there is no need to physically cut out the probe holding portion 26, the accuracy of the outer dimensions is high, and there is no possibility of damage to the probe pin 31 that occurs when cutting out.
Further, when the positioning hole is formed in the probe holding portion 26 using the photoresist as described above, the positioning hole is positioned with high accuracy. Therefore, the positioning is performed with high accuracy even when the probe unit 33 is attached to various devices. can do. Therefore, an energization test for a liquid crystal panel or the like can be performed with high accuracy.
Further, since the positioning portion pattern for determining the attachment position and the probe pin 31 are formed at the same time, the accuracy in forming the positioning hole is high, and as a result, the positional accuracy between the probe pin 31 and the object to be measured is improved.

Further, although the protective film 32 is formed in this example, the probe unit 33 may be used without forming the protective film 32. Alternatively, the protective film 32 may be formed after the probe unit 33 is peeled from the substrate 21.
Further, in order to shorten the time when the probe unit 33 is peeled from the substrate 21, a method in which the substrate 21 itself is formed of copper and the sacrificial film 22 is not provided may be used. In this case, if the strength of the copper substrate 21 is insufficient, the substrate 21 may be backed with a hard and stable substrate made of glass, ceramics, or the like.
Further, in this example, after the probe holding part 26 is formed, the probe pin 31 is laminated and formed thereon. Conversely, after the probe pin 31 is formed, the probe holding part 26 is laminated thereon. It may be formed.

FIG. 5 shows an example of a probe unit manufactured in the second embodiment of the probe unit manufacturing method of the present invention, FIG. 5 (a) is a plan view, and FIG. 5 (b) is FIG. 5 (a). It is sectional drawing which shows the state cut | disconnected by AA '.
The probe unit 33 includes a probe holding portion 26, and a plurality of leads 34, 34,... Arranged in parallel with each other at narrow intervals with high accuracy, and a probe pin 31 having a comb-teeth shape at the tip portion thereof. The probe pin 31 is laminated on the probe holding part 26 and is integrally formed. The probe unit 33 is joined with a flexible printed circuit board 36 in which a large number of electrodes 35, 35,... The probe unit 33 and the flexible printed circuit board 36 are joined such that the lead 34 and the electrode 35 are connected in a pair.
Further, positioning holes 37 and 37 may be formed in the probe holding portion 26 for positioning when the probe unit 33 is attached to various devices. The size, shape, position, etc. of the positioning hole 37 are appropriately set according to various devices to which the probe unit 33 is attached. In addition, since the positioning hole 37 is positioned with high accuracy using the photoresist as described above, the positioning can be performed with high accuracy when the probe unit 33 is attached to various devices.
Further, on the outer periphery of the surface of the positioning holes 37, 37, positioning portions 38, 38 made of the same material as the probe pin 31 may be formed simultaneously with the formation of the probe pin 31. The positioning portions 38 and 38 can further improve the positioning accuracy.

FIG. 6 is a plan view showing another example of the probe unit manufactured in the second embodiment of the probe unit manufacturing method of the present invention.
In the probe unit of this example, one or a plurality of pores 39, 39,... The pores 39 are formed when the sacrificial film 22 and the copper plating layer 27 are dissolved with an etchant in the method for manufacturing a probe unit of the present invention, and the probe pin 31 and the probe holding part 26 are peeled off from the substrate 21 while being integrated. In addition, the contact area between the etching solution and the sacrificial film 22 is increased. Therefore, the position where the pores 39 are formed and the size and number of the pores 39 are not particularly limited, and the shape may be slit-like, but the entire sacrificial film 22 below the probe holding portion 26 is formed. It is preferable that the etching solution is formed so as to be evenly contacted. In this way, the dissolution time of the sacrificial film 22 and the copper plating layer 27 is greatly shortened.

FIG. 7 is a schematic cross-sectional view showing an example of the third embodiment of the method for manufacturing the probe unit of the present invention.
In the probe unit manufacturing method of this embodiment, first, as shown in FIG. 7A, the sacrificial film 42 is formed on the surface of the substrate 41 by sputtering, vacuum deposition, ion plating, or the like. . In the present invention, a sputtering method is preferably used. Next, a base film 43 serving as a base for the probe unit is formed on the surface of the sacrificial film 42 by sputtering. Next, a photoresist having an arbitrary thickness is applied on the surface of the base film 43, and a mask having an arbitrary shape is disposed on the surface of the photoresist, followed by baking and development processing, and unnecessary photoresist. Then, a resist film 44 having an arbitrary probe pin pattern is formed.
In addition, since the positioning portion pattern for determining the attachment position and the probe pin pattern can be formed simultaneously, the accuracy in forming the positioning hole is high, and as a result, the positional accuracy between the probe pin and the object to be measured is improved.

Although there is no restriction | limiting in particular as the board | substrate 41, A glass plate, a synthetic resin board, a ceramic board, a silicon | silicone, a metal plate, etc. of about several millimeters thickness are used.
The sacrificial film 42 is preferably a copper thin film having a thickness of about 0.1 to 5 μm, a copper (Cu) / chromium (Cr) thin film, or the like. In particular, when a copper / chromium thin film is formed as the sacrificial film 42, first, chromium is formed by a sputtering method to form an adhesion layer, and copper is formed thereon by a sputtering method. In this case, the thickness of the chromium thin film is, for example, 0.03 μm, and the thickness of the copper thin film is, for example, about 0.3 μm.

The base film 43 is preferably a titanium (Ti) / nickel (Ni) -iron (Fe) thin film having a thickness of about 0.05 to 0.5 μm. When a titanium / nickel-iron thin film is formed as the base film 43, first, a titanium thin film is formed by sputtering to form an adhesion layer, and a nickel-iron thin film is formed thereon by sputtering. In this case, the thickness of the titanium thin film is, for example, 0.02 μm, and the thickness of the nickel-iron thin film is, for example, about 0.15 μm.
Here, the base film 43 is used because a high-resolution resist film cannot be obtained when a resist film made of a photoresist described later is formed directly on the sacrificial film 42. Since the base film 43 has good wettability with the photoresist, the presence of the base film 43 allows a high-resolution resist film to be formed on the sacrificial film 42. However, this is not necessary depending on the type of photoresist.

The thickness of the resist film 44 is preferably 10 to 200 μm.
When the resist film 44 is formed using a photoresist in this way, the lead groups constituting the probe pins can be formed in parallel with each other at a narrow interval. Further, the positioning of the probe pin and the probe holding portion can be performed with high accuracy. Furthermore, positioning of the positioning hole can be performed with high accuracy.

  Next, as shown in FIG. 7B, electroplating is performed on the surface of the base film 43 where the resist film 44 is not formed using a known plating solution for iron and nickel based on sulfuric acid. Thus, the metal foil 45 made of a nickel alloy or the like and forming a probe pin is formed by plating. At this time, the thickness of the metal foil 45 can be arbitrarily set.

  Next, as shown in FIG. 7C, the resist film 44 is removed. In order to remove the resist film 44, the interface between the resist film 44 and the base film 43 is washed with N-methyl-2-pyrrolidone. At this time, the resist film 44 can be efficiently removed by immersing the laminate composed of the substrate 41, the resist film 44, and the like in N-methyl-2-pyrrolidone and ultrasonically cleaning at 85 ° C. it can.

  Next, as shown in FIG. 7 (d), the base film 43 in the lower layer of the metal foil 45 and protruding from the metal foil 45 is removed by ion milling, and the base film 43 is the same as the metal foil 45. A probe pin 46 made of a base film 43 and a metal foil 45 is obtained on the surface of the sacrificial film 42.

Next, as shown in FIG. 7E, photosensitive polyimide, an ultraviolet curable adhesive, a cardo type insulating film, a photoresist, or the like is applied and cured on the portion where the base film 43 and the metal foil 45 are in close contact. Alternatively, the probe holding portion 47 is formed by attaching a dry film or the like. Preferably, a photoresist is used. In this case, the probe pin 46 is partially covered or the probe pin 46 is completely covered with the probe holding portion 47 so that the probe pin 46 is embedded in the probe holding portion 47. The probe holding portion 47 also serves as a protective film for the probe pin 46.
When a photoresist is used to form the probe holding portion 47, a photoresist having an arbitrary thickness is applied to the probe pin 46, a mask having an arbitrary shape is disposed on the surface of the photoresist, and baking and development processes are performed. This is done to remove unnecessary photoresist and form an arbitrary probe holding part shape. In this case, not only the outer shape of the probe holding portion 47 but also one or a plurality of positioning holes and pores can be simultaneously formed in the probe holding portion 47.

  Next, as shown in FIG. 7 (f), the sacrificial film 42 is dissolved with an etching solution that preferentially dissolves copper, and the probe pins 46 and the probe holding portions 47 are peeled off from the substrate 41 while being integrated. A probe unit 48 including a pin 46 and a probe holding portion 47 is obtained.

In the probe unit manufacturing method of this embodiment, since the probe pin 46 and the probe holding portion 47 are integrally formed by laminating various thin films, the probe is mechanically or using solder or adhesive. Since there is no process of joining the pin 46 and the probe holding part 47, the probe pin 46 is not damaged.
Further, the probe pin 46 and the probe holding portion 47 can be positioned and joined with high accuracy.
Further, since the probe holding portion 47 is formed using the photoresist as described above, the positioning hole can be positioned with high accuracy, so that positioning can be performed with high accuracy even when the probe unit 48 is attached to various devices. can do. Therefore, an energization test for a liquid crystal panel or the like can be performed with high accuracy.
Further, since the positioning portion pattern for determining the mounting position and the probe pin 46 can be formed at the same time, the accuracy in forming the positioning hole is high, and as a result, the positional accuracy between the probe pin 46 and the object to be measured is improved. .

In order to shorten the time when the probe unit 48 is peeled from the substrate 41, a method in which the substrate 41 itself is formed of copper and the sacrificial film 42 is not provided may be used. In this case, if the strength of the copper substrate 41 is insufficient, the substrate 41 may be backed with a hard and stable substrate made of glass, ceramics, or the like.
In addition, since the probe holding portion 47 is made of resin, it may expand and contract due to temperature changes, and high dimensional accuracy may not be obtained. In such a case, as shown in FIG. 8, a holding plate 49 made of a material that does not easily expand or contract due to a temperature change such as ceramics, quartz, or silicon is bonded to the probe holding portion 47 with an adhesive or the like. May be.

9, 10 and 11 are schematic cross-sectional views showing an example of the fourth embodiment of the method for manufacturing the probe unit of the present invention.
In the probe unit manufacturing method of this embodiment, first, as shown in FIG. 9A, a sacrificial film 52 is formed on the surface of the substrate 51 by sputtering, vacuum deposition, ion plating, or the like. . In the present invention, a sputtering method is preferably used.
Although there is no restriction | limiting in particular as the board | substrate 51, A glass plate, a synthetic resin board, a ceramic board, a silicon | silicone, a metal plate, etc. of thickness about several millimeters are used.
The sacrificial film 52 is preferably a copper thin film having a thickness of about 0.1 to 5 μm, a copper (Cu) / chromium (Cr) thin film, or the like. In particular, when a copper / chromium thin film is formed as the sacrificial film 52, first, chromium is formed by a sputtering method to form an adhesion layer, and copper is formed thereon by a sputtering method. In this case, the thickness of the chromium thin film is, for example, 0.03 μm, and the thickness of the copper thin film is, for example, about 0.3 μm.

Next, as shown in FIG. 9B, a first base film 53 that forms the base of the probe pin is formed on the surface of the sacrificial film 52 by sputtering.
The first base film 53 is preferably a titanium (Ti) / nickel (Ni) -iron (Fe) thin film having a thickness of about 0.05 to 0.5 μm. When a titanium / nickel-iron thin film is formed as the first base film 53, first, a titanium thin film is formed by a sputtering method to form an adhesion layer, and a nickel-iron thin film is formed thereon by a sputtering method. In this case, the thickness of the titanium thin film is, for example, 0.02 μm, and the thickness of the nickel-iron thin film is, for example, about 0.15 μm.
The first base film 53 is used because a high-resolution resist film cannot be obtained when a resist film made of a photoresist described later is formed directly on the sacrificial film 52. Depending on the type of the photoresist, Is unnecessary.

Next, as shown in FIG. 9C, a photoresist having an arbitrary thickness is applied on the surface of the first base film 53, and a mask having an arbitrary shape is arranged on the surface of the photoresist. Then, baking and development are performed to remove unnecessary photoresist, and a first resist film 54 having an arbitrary probe pin pattern is formed. Moreover, it is preferable that the thickness of the 1st resist film 54 shall be 10-200 micrometers.
When the first resist film 54 is formed, not only the resist film shape for forming the probe pin but also one or more frame patterns for positioning the probe unit, and one or more positioning holes are formed. Alternatively, the shape forming the pores may be formed simultaneously.

  Next, as shown in FIG. 9D, a known iron or nickel plating solution based on sulfuric acid is applied on the surface of the first base film 53 on which the first resist film 54 is not formed. The first metal foil 55 made of a nickel alloy or the like, which forms a probe pin and a positioning portion, is formed by electroplating. At this time, the thickness of the first metal foil 55 can be arbitrarily set.

  Next, as shown in FIG. 9E, the first resist film 54 is removed. In order to remove the first resist film 54, the interface between the first resist film 54 and the first base film 53 is washed with N-methyl-2-pyrrolidone. At this time, if the laminate including the substrate 51 and the first resist film 54 is immersed in N-methyl-2-pyrrolidone and ultrasonically cleaned at 85 ° C., the first resist film 54 is removed. Can be done efficiently.

  Next, as shown in FIG. 9 (f), the portion of the first base film 53 that protrudes below the first metal foil 55 in the lower layer of the first metal foil 55 is removed by ion milling, The first base film 53 is formed in the same shape as the first metal foil 55, and the probe pin 56 composed of the first base film 53 and the first metal foil 55 is obtained on the surface of the sacrificial film 52.

Next, as shown in FIG. 10A, the surface of the sacrificial film 52 and the entire surface of the probe pin 56 are covered with a copper plating layer 57. At this time, the copper plating layer 57 is excessively formed so as to completely surround the surface of the sacrificial film 52 and the entire surface of the probe pin 56.
Next, as shown in FIG. 10B, the copper plating layer 57 is polished with a diamond slurry or the like so as to be flush with the probe pin 56.

  Next, as shown in FIG. 10C, an insulating film 58 is formed on the surfaces of the probe pin 56 and the copper plating layer 57. The insulating film 58 is made of a silicon dioxide film, an alumina film, or the like formed by a sputtering method, a CVD method, or the like, and has a thickness of about 0.1 to 20 μm. Incidentally, the insulating film 58 is provided to insulate the probe pin 56 from a later-described probe holding portion formed on the probe pin 56.

Next, as shown in FIG. 10D, a second base film 59 that forms the base of the probe holding portion is formed on the surface of the insulating film 58 by sputtering.
Further, as the second base film 59, the same film as the first base film 53 is used.

Next, as shown in FIG. 10E, a photoresist having an arbitrary thickness is applied on the surface of the second base film 59, and a mask having an arbitrary shape is disposed on the surface of the photoresist. Then, baking and development are performed to remove unnecessary photoresist, and a second resist film 60 having an opening of an arbitrary probe holding portion pattern is formed. The thickness of the second resist film 60 is preferably 10 to 200 μm. Further, in addition to the probe holding part pattern, one or a plurality of frame patterns for positioning the probe unit, one or a plurality of positioning holes and a shape forming a fine hole can be simultaneously opened.
The photoresist used for forming the second resist film 60 may be the same as that used for forming the first resist film 54.

  Next, as shown in FIG. 11A, a known iron or nickel plating solution based on sulfuric acid is applied on the surface of the second base film 59 on which the second resist film 60 is not formed. The second metal foil 61 made of a nickel alloy or the like and forming a probe holding portion is formed by electroplating and plating. At this time, the thickness of the second metal foil 61 can be arbitrarily set.

  Next, as shown in FIG. 11B, the second resist film 60 is removed. In order to remove the second resist film 60, the interface between the second resist film 60 and the second base film 59 is washed with N-methyl-2-pyrrolidone. At this time, if the laminate composed of the substrate 51, the second resist film 60, and the like is immersed in N-methyl-2-pyrrolidone and ultrasonically cleaned at 85 ° C., the second resist film 60 is removed. Can be done efficiently.

  Next, as shown in FIG. 11C, a portion of the second base film 59 protruding below the second metal foil 61 in the lower layer of the second metal foil 61 is removed by ion milling, The second base film 59 is formed in the same shape as the second metal foil 61.

Next, as shown in FIG. 11D, the insulating film 58 in the lower layer of the second metal foil 61 and protruding from the second metal foil 61 is removed by ion etching, and the insulating film 58 is removed. Is formed in the same shape as the second metal foil 61 to obtain the probe holding portion 62 composed of the insulating film 58 and the second metal foil 61.
Next, as shown in FIG. 11E, the sacrificial film 52 and the copper plating layer 57 are dissolved with an etching solution that preferentially dissolves copper, and the probe pin 56 and the probe holding portion 62 remain integrated. The probe unit 63 including the probe pin 56 and the probe holding portion 62 is obtained.

In the probe unit manufacturing method of this embodiment, the probe pin 56 and the probe holding portion 62 are integrally formed by laminating various thin films, so that the probe is mechanically or using solder or adhesive. Since there is no process of joining the pin 56 and the probe holding part 62, the probe pin 56 is not damaged.
Moreover, the probe pin 56 and the probe holding part 62 can be positioned and joined with high accuracy.
Further, since the probe pin 56 and the probe holding portion 62 are formed using the photoresist as described above, the positioning frame, the positioning hole, and the fine hole can be positioned with high accuracy. It can be positioned with high accuracy when it is attached to various devices. Therefore, an energization test for a liquid crystal panel or the like can be performed with high accuracy.
In addition, since the pattern of the positioning portion such as the frame, positioning hole, and fine hole and the probe pin 56 can be formed at the same time, the accuracy in forming the positioning portion is high. As a result, the probe pin 56 and the object to be measured Position accuracy is improved.

FIG. 12 shows an example of the probe unit manufactured in the third embodiment of the probe unit manufacturing method of the present invention, FIG. 12 (a) is a plan view, and FIG. 12 (b) is a schematic cross-sectional view.
The probe unit 70 includes a probe holding portion 71 and a probe pin 73 in which a large number of leads 72, 72,... The probe pin 73 is laminated on the probe holding portion 71 and formed integrally. The probe unit 70 is joined with a flexible printed board 75 in which a large number of electrodes 74, 74,... Are formed in parallel with each other at a narrow interval. The probe unit 70 and the flexible printed circuit board 75 are joined so that the lead 72 and the electrode 74 form a pair.

Further, positioning holes 76 and 76 may be formed in the probe holding portion 71 for positioning when the probe unit 70 is attached to various devices. The size, shape, position and the like of the positioning hole 76 are appropriately set according to various devices to which the probe unit 70 is attached. In addition, since the positioning hole 76 is positioned with high accuracy using a photoresist as described above, it can be positioned with high accuracy when the probe unit 70 is attached to various devices.
Further, on the outer periphery of the surface of the positioning holes 76, 76, positioning portions 77, 77 made of the same material as the probe pin 73 are formed simultaneously with the formation of the probe pin 73.
Further, since the pattern for determining the attachment position and the probe pin are formed simultaneously, the accuracy in forming the positioning hole is high, and as a result, the positional accuracy between the probe pin and the object to be measured is improved.

FIG. 13: is a top view which shows the other example of the probe unit manufactured by 3rd Embodiment of the manufacturing method of the probe unit of this invention.
In the probe unit of this example, the probe holding portion 71 may be formed with a large number of pores 78, 78,. The pores 78 are formed when the sacrificial film is dissolved with the etchant and the probe pin 73 and the probe holding part 71 are peeled off from the substrate while being integrated with each other in the probe unit manufacturing method of the present invention. It is for enlarging the contact area. Accordingly, the position where the pores 78 are formed, and the size and number of the pores 78 are not particularly limited, but are formed so that the etching solution uniformly contacts the entire sacrificial film below the probe holding portion 71. It is preferable. By doing so, the dissolution time of the sacrificial film is greatly shortened.

FIG. 14 is a schematic configuration diagram showing a second example of the probe unit manufactured in the third embodiment of the probe unit manufacturing method of the present invention. FIG. 14 (a) is a plan view, and FIG. ) Is a cross-sectional view showing a state cut along BB 'in FIG.
In the probe unit of this example, a part of the probe holding portion 81 is formed of the resin layer 81a.
In the probe unit of this example, in order to insulate the probe holding portion 81 and the probe pin 83, the portion of the probe holding portion 81 where the probe pin 83 is formed is covered with a resin layer 81a made of a resin such as resist or photosensitive polyimide. Formed. The resin layer 81a has a large linear expansion coefficient, and is deformed by a temperature change. As a result, the position accuracy of the probe pin is lowered. Therefore, it is preferable that the ratio of the resin layer 81a to the probe holder 81 is small.
When the probe unit of this example is attached to various energization devices, the positioning frame 84 is fitted to the attachment portion 91 of the holder 90 of the energization device.

FIG. 15 is a schematic configuration diagram showing a third example of the probe unit manufactured in the third embodiment of the probe unit manufacturing method of the present invention. FIG. 15A is a plan view, and FIG. ) Is a cross-sectional view showing a state cut along CC ′ in FIG.
In the probe unit of this example, a positioning hole 84 a is formed in the positioning frame 84.
In the probe unit of this example, since the positioning frame 84, the positioning hole 84a, and the probe pin 83 are formed at the same time, the accuracy of forming the positioning frame 84 and the positioning hole 84a is increased. The positional accuracy with the measured object is improved.
When the probe unit of this example is attached to various energization devices or the like, the positioning holes 84a are fitted into the positioning pins 93 of the holder 92 of the energization device.
In the probe unit of this example, since the ratio of the resin layer 81a occupying the probe holding portion 81 is small, it is possible to prevent the positional accuracy of the probe pin from being lowered due to a temperature change. Further, since no resin is used around the positioning hole 84a, it is possible to prevent the positional accuracy of the probe pin from being lowered due to a temperature change.

FIG. 16 is a schematic configuration diagram showing a first example of the probe unit manufactured in the fourth embodiment of the method for manufacturing the probe unit of the present invention. FIG. 16 (a) is a plan view, and FIG. ) Is a cross-sectional view showing a state cut along DD ′ in FIG.
The probe unit of this example includes a probe holding portion 81, a plurality of leads 82, 82,... Arranged in parallel with each other at narrow intervals with high accuracy, and a probe pin 83 having a comb-teeth shape at the tip portion thereof, A positioning frame 84, 84 is schematically configured, and the probe pin 83 and the positioning frames 84, 84 are laminated on the probe holding portion 81 and integrally formed.
Further, the positioning frames 84 and 84 are arranged at both ends of the probe holding portion 81 in parallel with the leads 82, 82,. Further, the positioning frame 84 is formed of the same material as that for forming the probe pin 83. The size, shape, position, etc. of the positioning frame 84 are appropriately set according to various energization devices to which the probe unit of this example is attached.
In the probe unit of this example, since the positioning frame 84 for determining the mounting position and the probe pin 83 are formed at the same time, the accuracy of forming the positioning frame 84 is increased, and as a result, the probe pin 83 and the object to be measured are formed. And the positional accuracy is improved.
When attaching the probe unit of this example to various energization devices, the positioning frame 84 is fitted to the attachment portion 91 of the holder 90 of the energization device.

FIG. 17 is a schematic front view showing an example of use of the probe unit manufactured by the probe unit manufacturing method of the present invention. In this figure, the probe unit 33 shown in FIG. 5 is illustrated as the probe unit.
The probe holding unit 26 of the probe unit 33 is joined to the joining surface 100a of the holder 100 of the not-shown energization device, and is connected to the electric circuit of the energization device via an electrode (not shown) of the flexible printed circuit board 36. ing.
Further, in order to join the probe unit 33 to the holder 100, the positioning hole 37 formed in the probe holding portion 26 is provided perpendicularly to the joining surface of the holder 100, and the positioning pin 101 having a screw groove formed at the tip. And is fixed by a fixing metal fitting 102 made of a nut or the like.
The tip of the probe pin 31 of the probe unit 33 is pressed against an electrode of an object 110 to be measured such as a liquid crystal panel placed on a sample stage 103 formed of an insulating material, and an energization test is performed.

  As described above, according to the probe unit manufacturing method of the present invention, a probe unit in which the probe pin and the probe holding portion are arranged with high accuracy and the holes for mounting to various devices and the like are arranged with high accuracy is manufactured. can do. Therefore, an energization test for a liquid crystal panel or the like can be performed with high accuracy. Further, since the pattern for determining the attachment position and the probe pin can be formed simultaneously, the accuracy in forming the positioning hole is high, and as a result, the positional accuracy between the probe pin and the object to be measured can be improved.

Further, the probe unit of the present invention is a probe unit including a probe pin and a probe holding part, and the probe holding part is formed with one or a plurality of positioning parts. When attaching to various devices, it can be positioned with high accuracy.
If a plurality of pores are formed in the probe holding part, the efficiency becomes higher when the probe unit is etched.
If the probe holding part is formed by plating in a frame made of resist, the thickness of the probe holding part is uniform, and positioning holes and positioning frames formed in the probe holding part The positioning part and the like and the fine holes are arranged with high accuracy.
When an insulating film is formed on the surface of the probe holding portion formed by plating and a probe pin is formed on the surface of the insulating film, a probe pin pattern is formed on the insulating film using a photoresist. Since the high-resolution probe pin pattern is formed, the obtained probe pin has high accuracy.
If the probe holding part and the probe pin are covered with a protective film, the adhesion between the probe holding part and the probe pin can be improved, and the wiring of the probe unit can be protected.
If a probe pin made of the same material as or substantially the same material as the probe holding part, for example, a material having the same alloy system, is formed on the surface of the probe holding part formed by plating, the probe holding part The probe holding portion and the probe pin are arranged with high accuracy.
If the probe pin formed by plating is embedded in the probe holding portion made of resin, the probe pin and the probe holding portion are integrally formed, so that the probe pin is not damaged. Further, the probe pin and the probe holding part are positioned and joined with high accuracy.

It is a cross-sectional schematic diagram which shows an example of 1st Embodiment of the manufacturing method of the probe unit of this invention. It is a top view which shows an example of the probe unit manufactured by 1st Embodiment of the manufacturing method of the probe unit of this invention. It is a cross-sectional schematic diagram which shows an example of 2nd Embodiment of the manufacturing method of the probe unit of this invention. FIGS. 3 (a-1),..., (F-1) are schematic views of cross sections parallel to the longitudinal direction of the probe unit, and FIGS. FIG. 2B is a schematic cross-sectional view illustrating a process of forming a positioning hole in the probe holding portion of the probe unit. It is a cross-sectional schematic diagram which shows an example of 2nd Embodiment of the manufacturing method of the probe unit of this invention. 4 (a-1),..., (F-1) are schematic views of cross sections parallel to the longitudinal direction of the probe unit. FIG. 2B is a schematic cross-sectional view illustrating a process of forming a positioning hole in the probe holding portion of the probe unit. An example of the probe unit manufactured by the second embodiment of the probe unit manufacturing method of the present invention is shown, FIG. 5 (a) is a plan view, and FIG. 5 (b) is an AA of FIG. 5 (a). It is sectional drawing which shows the state cut | disconnected by '. It is a top view which shows the other example of the probe unit manufactured by 2nd Embodiment of the manufacturing method of the probe unit of this invention. It is a cross-sectional schematic diagram which shows an example of 3rd Embodiment of the manufacturing method of the probe unit of this invention. It is a cross-sectional schematic diagram which shows the other example of 3rd Embodiment of the manufacturing method of the probe unit of this invention. It is a cross-sectional schematic diagram which shows an example of 4th Embodiment of the manufacturing method of the probe unit of this invention. It is a cross-sectional schematic diagram which shows an example of 4th Embodiment of the manufacturing method of the probe unit of this invention. It is a cross-sectional schematic diagram which shows an example of 4th Embodiment of the manufacturing method of the probe unit of this invention. An example of the probe unit manufactured by 3rd Embodiment of the manufacturing method of the probe unit of this invention is shown, Fig.12 (a) is a top view, FIG.12 (b) is a cross-sectional schematic diagram. It is a top view which shows the other example of the probe unit manufactured by 3rd Embodiment of the manufacturing method of the probe unit of this invention. FIGS. 14A and 14B are schematic configuration diagrams showing a second example of the probe unit manufactured in the third embodiment of the probe unit manufacturing method of the present invention, FIG. 14A is a plan view, and FIG. 14B is FIG. It is sectional drawing which shows the state cut | disconnected by BB 'of (a). FIG. 15 is a schematic configuration diagram illustrating a third example of a probe unit manufactured by the third embodiment of the probe unit manufacturing method of the present invention, FIG. 15A is a plan view, and FIG. 15B is FIG. It is sectional drawing which shows the state cut | disconnected by CC 'of (a). FIG. 16 is a schematic configuration diagram illustrating a first example of a probe unit manufactured in the fourth embodiment of the probe unit manufacturing method of the present invention, FIG. 16A is a plan view, and FIG. 16B is FIG. It is sectional drawing which shows the state cut | disconnected by DD 'of (a). It is a front schematic diagram which shows the usage example of the probe unit manufactured with the manufacturing method of the probe unit of this invention.

Explanation of symbols

1, 21, 41, 51 ... substrate, 2, 22, 42, 52 ... sacrificial film, 3, 28, 43 ... base film, 4, 44 ... resist film, 5, 45 ... -Metal foil, 6, 33, 48, 63, 70 ... Probe unit, 7, 34, 72, 82 ... Lead, 8, 31, 46, 56, 73, 83 ... Probe pin, 9, 26, 47, 62, 71, 81... Probe holding portion, 10, 37, 76, 84a... Positioning hole, 11, 39, 78... Pore, 23, 54. Film, 24 ... first metal foil, 25,58 ... insulating film, 27,57 ... copper plating layer, 29,60 ... second resist film, 30 ... second Metal foil, 32 ... protective film, 35, 74 ... electrode, 36, 75 ... flexible printed circuit board, 38, 77 ... Positioning part, 49 ... holding plate, 53 ... first base film, 55 ... first metal foil, 59 ... second base film, 61 ... second metal foil, 81a ... resin layer, 84 ... positioning frame, 90, 92, 100 ... holder, 91 ... mounting portion, 93, 101 ... positioning pin, 100a ... joining surface, 102 ...・ Fixing bracket, 103 ... Sample stand, 110 ... Measurement object

Claims (5)

  A sacrificial film is formed on the surface of the substrate, a resist having a probe pin pattern opened on the surface of the sacrificial film, a probe pin is formed by plating in the opening of the resist, the resist is removed, and the probe A probe unit is obtained by forming a probe holding part on a surface of a pin with a resin, dissolving the sacrificial film, and peeling the probe pin and the probe holding part from the substrate. Method. The probe unit manufacturing method according to claim 1, wherein the probe pin formed by plating is embedded in the probe holding portion formed of resin.   3. The probe unit manufacturing method according to claim 1, wherein the outer shape of the probe holding portion is formed by baking and development using a mask.   The method for manufacturing a probe unit according to any one of claims 1 to 3, wherein one or a plurality of positioning holes and pores are formed in the probe holding portion simultaneously with the outer shape of the probe holding portion. The method of manufacturing a probe unit according to any one of claims 1 to 4, wherein the positioning portion that determines the attachment position of the probe unit and the probe pin are made of the same material.

Images