JP2003309196A - Magnetic shielding package for magnetic nonvolatile memory element - Google Patents
Magnetic shielding package for magnetic nonvolatile memory elementInfo
- Publication number
- JP2003309196A JP2003309196A JP2002112877A JP2002112877A JP2003309196A JP 2003309196 A JP2003309196 A JP 2003309196A JP 2002112877 A JP2002112877 A JP 2002112877A JP 2002112877 A JP2002112877 A JP 2002112877A JP 2003309196 A JP2003309196 A JP 2003309196A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- package
- mram element
- shield member
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気不揮発性メモリ
素子の磁気シールドパッケージに関し、特に磁気不揮発
性メモリ素子に対する外部磁界の影響を抑制するための
磁気不揮発性メモリ素子の磁気シールドパッケージに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic shield package for a magnetic non-volatile memory device, and more particularly to a magnetic shield package for a magnetic non-volatile memory device for suppressing the influence of an external magnetic field on the magnetic non-volatile memory device.
【０００２】[0002]
【従来の技術】近年、半導体メモリとして、例えば日本
応用磁気学会第１１６回研究会資料などで報告されてい
るように、磁気不揮発性メモリ（Magnetic Random Acce
ss Memory，以下「ＭＲＡＭ」という）の開発が進めら
れている。2. Description of the Related Art In recent years, as a semiconductor memory, for example, a magnetic non-volatile memory (Magnetic Random Acce
ss Memory, hereinafter referred to as "MRAM") is under development.
【０００３】ＭＲＡＭ素子は、ナノ磁性体特有のスピン
依存伝導現象に基づく磁気抵抗効果を利用した半導体メ
モリであり、外部からの電力供給なしで記憶を保持する
ことのできる不揮発性メモリである。The MRAM element is a semiconductor memory utilizing the magnetoresistive effect based on the spin-dependent conduction phenomenon peculiar to nano-magnetic material, and is a non-volatile memory capable of holding the memory without external power supply.
【０００４】このＭＲＡＭ素子における情報の書き込み
は、マトリックス状に配線したビット線とワード線の交
点の合成磁場により、交叉したセルの磁性スピンを反転
させ、その向きを“１”，“０”の情報として記憶す
る。また、読み出しは、磁気抵抗効果を応用したＴＭＲ
（Tunneling MagnetoResistance）効果を利用して行
う。このＴＭＲ効果とは、スピンの向きによって抵抗値
が変化する現象であり、抵抗の高低により情報の
“１”，“０”を検出する。In the writing of information in this MRAM element, the magnetic spins of the intersected cells are reversed by the combined magnetic field at the intersections of the bit lines and the word lines arranged in a matrix, and their directions are set to "1" and "0". Store as information. In addition, the reading is TMR using the magnetoresistive effect.
(Tunneling MagnetoResistance) The effect is used. The TMR effect is a phenomenon in which the resistance value changes depending on the direction of spin, and "1" and "0" of information are detected depending on the height of the resistance.
【０００５】ＭＲＡＭ素子は、省電力で、高速かつ不揮
発性の大容量メモリとして期待されている。The MRAM element is expected to be a power-saving, high-speed and nonvolatile large-capacity memory.
【０００６】[0006]
【発明が解決しようとする課題】しかし、ＭＲＡＭ素子
は、記憶保持に磁性体を用いているため、外部磁界によ
って情報が消されたり、書き換えられたりするという問
題点があった。However, since the MRAM element uses a magnetic material for storing data, there is a problem that information is erased or rewritten by an external magnetic field.
【０００７】実際にＭＲＡＭ素子が使用されるのは、電
子機器内部の主として高密度実装基板上である。このよ
うな高密度実装基板上には、近年の実装技術の発達によ
り、半導体素子、通信用素子、超小型のモータなどが高
密度に実装されている。また、電子機器内部には、アン
テナ素子、各種メカニカル部品、電源などが高密度実装
され、ひとつの機器を構成している。The MRAM device is actually used mainly on the high-density mounting substrate inside the electronic device. Due to the recent development of mounting technology, semiconductor elements, communication elements, ultra-compact motors, etc. are mounted on such a high-density mounting board at a high density. In addition, an antenna element, various mechanical parts, a power supply, etc. are mounted in high density inside the electronic device to form one device.
【０００８】これらの各素子、部品が近接した状態で配
置されているＭＲＡＭ素子には、各素子などが形成する
磁界が、外部磁界として作用するようになる。図１４は
ＭＲＡＭ素子に外部から作用すると想定される磁界強度
の例を示す図である。The magnetic field formed by each element acts as an external magnetic field on the MRAM element in which these elements and parts are arranged in close proximity to each other. FIG. 14 is a diagram showing an example of magnetic field strength assumed to act on the MRAM element from the outside.
【０００９】実装基板上に配置されたモータからは、例
えば、磁界強度２００Ｏｅ〜３００Ｏｅ程度で周波数５
０Ｈｚ〜６０Ｈｚ程度の交流磁界が、また、電源部から
は、磁界強度１００Ｏｅ〜３００Ｏｅ程度で周波数５０
Ｈｚ〜数ＭＨｚ程度の交流磁界が、ＭＲＡＭ素子に作用
してくることが想定される。モータや電源部などから
は、比較的周波数の低い磁界成分が定常的に発生してい
る。From the motor arranged on the mounting board, for example, at a magnetic field strength of about 200 Oe to 300 Oe, a frequency of 5 is obtained.
An alternating magnetic field of 0 Hz to 60 Hz or a frequency of 50 from the power supply unit at a magnetic field strength of 100 Oe to 300 Oe.
It is assumed that an AC magnetic field of about Hz to several MHz acts on the MRAM element. A magnetic field component having a relatively low frequency is constantly generated from the motor and the power supply unit.
【００１０】また、ＭＲＡＭ素子付近に永久磁石などが
配置されることもあり、この場合、例えば、磁界強度１
０００Ｏｅ程度の直流（ＤＣ）の磁界がＭＲＡＭ素子に
作用することがある。さらに、実装基板の近傍に形成さ
れる磁界（基板近傍磁界）は、例えば、磁界強度１００
Ｏｅ程度で周波数が数ＭＨｚを超える高周波磁界となっ
てＭＲＡＭ素子に作用してくることが想定される。A permanent magnet or the like may be arranged near the MRAM element. In this case, for example, the magnetic field strength is 1
A direct current (DC) magnetic field of about 000 Oe may act on the MRAM element. Further, the magnetic field formed in the vicinity of the mounting board (magnetic field near the board) has, for example, a magnetic field strength of 100.
It is assumed that a high frequency magnetic field having a frequency exceeding several MHz is applied to the MRAM element at about Oe.
【００１１】このように、実装されたＭＲＡＭ素子の周
囲には、直流磁界成分、あるいは低周波数から高周波数
に渡る広い周波数範囲の交流磁界成分が混在している。
これに対し、ＭＲＡＭ素子の反転磁界強度は３０Ｏｅ〜
５０Ｏｅ程度であり、ＭＲＡＭ素子の記録保持信頼性確
保のためには、外部磁気の進入を防止する磁気シールド
方法の確立が不可欠である。As described above, a DC magnetic field component or an AC magnetic field component having a wide frequency range from a low frequency to a high frequency is mixed around the mounted MRAM element.
On the other hand, the reversal magnetic field strength of the MRAM element is 30 Oe
Since it is about 50 Oe, establishment of a magnetic shield method for preventing invasion of external magnetism is indispensable in order to secure the recording holding reliability of the MRAM element.
【００１２】本発明はこのような点に鑑みてなされたも
のであり、ＭＲＡＭ素子に対する外部磁界の影響を抑制
して記録保持信頼性を向上したＭＲＡＭ素子の磁気シー
ルドパッケージを提供することを目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide a magnetic shield package for an MRAM element in which the influence of an external magnetic field on the MRAM element is suppressed to improve the recording holding reliability. To do.
【００１３】[0013]
【課題を解決するための手段】本発明によれば、ＭＲＡ
Ｍ素子に対する外部磁界の影響を抑制するＭＲＡＭ素子
の磁気シールドパッケージにおいて、ＭＲＡＭ素子が、
軟磁性材料を用いて形成された磁気シールド部材に囲ま
れて密閉状態で配置されていることを特徴とするＭＲＡ
Ｍ素子の磁気シールドパッケージが提供される。According to the present invention, an MRA
In a magnetic shield package of an MRAM element for suppressing the influence of an external magnetic field on the M element, the MRAM element is
An MRA characterized in that it is surrounded by a magnetic shield member formed of a soft magnetic material and arranged in a hermetically sealed state.
An M element magnetic shield package is provided.
【００１４】このようなＭＲＡＭ素子の磁気シールドパ
ッケージによれば、ＭＲＡＭ素子が軟磁性材料を用いて
形成された磁気シールド部材で囲まれて密閉されるの
で、磁気シールド部材に到達した磁束は、磁気シールド
部材の内部を進行しやすくなり、または、その内部で吸
収されて強度が弱められる。さらに、ＭＲＡＭ素子は、
様々な方向から作用する外部磁界から保護されるように
なる。According to such a magnetic shield package of the MRAM element, since the MRAM element is surrounded and sealed by the magnetic shield member formed of the soft magnetic material, the magnetic flux reaching the magnetic shield member is magnetized. It is easy for the inside of the shield member to travel, or is absorbed inside the shield member to weaken its strength. Furthermore, the MRAM device is
Protects against external magnetic fields acting from various directions.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図１はＭＲＡＭ素子の磁気シール
ドパッケージの平面図、図２はＭＲＡＭ素子の磁気シー
ルドパッケージの側面図、図３は図１のＡ−Ａ断面図で
ある。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1 is a plan view of the magnetic shield package of the MRAM element, FIG. 2 is a side view of the magnetic shield package of the MRAM element, and FIG. 3 is a sectional view taken along the line AA of FIG.
【００１６】磁気シールドパッケージ１０内のＭＲＡＭ
素子１１は、図１および図３に示すように、ワイヤ１２
でリードフレーム１３に結線されている。そして、図１
ないし図３に示すように、ＭＲＡＭ素子１１は、その周
囲全体が中空の磁気シールド部材１４に囲まれている。MRAM in the magnetic shield package 10
The element 11 includes a wire 12 as shown in FIGS.
And is connected to the lead frame 13. And FIG.
As shown in FIGS. 3A to 3C, the MRAM element 11 is entirely surrounded by the hollow magnetic shield member 14.
【００１７】ここで、磁気シールド部材１４は、磁気シ
ールドパッケージ１０の外部へ信号線（リード）を引き
出すため、リードフレーム１３の一部が磁気シールド部
材１４の外部に出るように形成されている。ＭＲＡＭ素
子１１は、このような形状の磁気シールド部材１４に囲
まれ、密閉された状態で配置されている。Here, the magnetic shield member 14 is formed so that a part of the lead frame 13 is exposed to the outside of the magnetic shield member 14 in order to lead the signal line (lead) to the outside of the magnetic shield package 10. The MRAM element 11 is surrounded by the magnetic shield member 14 having such a shape and is arranged in a hermetically sealed state.
【００１８】このような磁気シールドパッケージ１０の
磁気シールド部材１４は、絶縁性の軟磁性材料を用いて
形成されている。この絶縁性軟磁性材料としては、特
に、透磁率の高いものを好適に用いることができる。こ
のように、絶縁性軟磁性材料を用いた磁気シールド部材
１４でＭＲＡＭ素子１１を保護することで、ＭＲＡＭ素
子１１に対する外部磁界の影響を抑制することが可能に
なる。The magnetic shield member 14 of such a magnetic shield package 10 is formed by using an insulating soft magnetic material. As the insulating soft magnetic material, a material having a high magnetic permeability can be preferably used. As described above, by protecting the MRAM element 11 with the magnetic shield member 14 using the insulating soft magnetic material, it is possible to suppress the influence of the external magnetic field on the MRAM element 11.
【００１９】すなわち、従来は、通常、低周波磁界に対
しては、ＭＲＡＭ素子付近に透磁率の高い物質を配置
し、その物質内をより多くの磁束が流れるようにするこ
とで、ＭＲＡＭ素子への磁束の進入を抑制する方法が採
られていた。また、高周波磁界に対しては、ＭＲＡＭ素
子付近に電磁波吸収材料を配置し、これに進入した磁束
を熱エネルギーに変換して吸収する方法が採られてい
た。That is, conventionally, for a low-frequency magnetic field, a material having a high magnetic permeability is usually arranged in the vicinity of the MRAM element, and more magnetic flux flows through the material, so that the MRAM element is supplied. The method of suppressing the invasion of the magnetic flux has been adopted. Further, for a high-frequency magnetic field, a method has been adopted in which an electromagnetic wave absorbing material is arranged near the MRAM element and the magnetic flux that has entered this is converted into thermal energy and absorbed.
【００２０】これに対し、本発明では、ＭＲＡＭ素子１
１を、絶縁性軟磁性材料を用いて形成された磁気シール
ド部材１４により、外部磁界から保護するようにしてい
る。図４はＭＲＡＭ素子の磁気シールドパッケージにお
ける磁気シールド機構の説明図である。On the other hand, in the present invention, the MRAM element 1
1 is protected from the external magnetic field by the magnetic shield member 14 formed of an insulating soft magnetic material. FIG. 4 is an explanatory diagram of the magnetic shield mechanism in the magnetic shield package of the MRAM element.
【００２１】上記構成の磁気シールドパッケージ１０が
低周波磁界内に置かれた場合、軟磁性の磁気シールド部
材１４に到達した磁束は、その透磁率の実部μ’項の寄
与により、磁気シールド部材１４の内部を好んで進行す
るようになる。これにより、磁束の進路が変えられ、Ｍ
ＲＡＭ素子１１への磁束の進入が抑制される。When the magnetic shield package 10 having the above-mentioned structure is placed in a low frequency magnetic field, the magnetic flux reaching the soft magnetic magnetic shield member 14 contributes to the real part μ'of the magnetic permeability so that the magnetic shield member can be made. It will proceed to the inside of 14. By this, the course of the magnetic flux is changed, and M
The entry of magnetic flux into the RAM element 11 is suppressed.
【００２２】また、高周波磁界内では、磁気シールド部
材１４に到達した磁束は、透磁率の虚部μ”項の寄与に
より、磁気シールド部材１４の内部で熱エネルギーとし
て吸収されるようになる。これにより、ＭＲＡＭ素子１
１への磁束の進入が抑制される。In the high frequency magnetic field, the magnetic flux that has reached the magnetic shield member 14 is absorbed as heat energy inside the magnetic shield member 14 due to the contribution of the imaginary part μ ″ term of the magnetic permeability. Enables MRAM device 1
The entry of magnetic flux into 1 is suppressed.
【００２３】さらに、ＭＲＡＭ素子１１は、磁気シール
ド部材１４によって密閉状態になっているため、様々な
方向からの磁束に対して効果的に保護される。したがっ
て、ＭＲＡＭ素子１１に対する外部磁界の影響を抑制す
ることができ、ＭＲＡＭ素子１１の記録保持信頼性を向
上させることができる。さらに、トランジスタのスイッ
チングに伴うノイズの発生も未然に抑制することができ
るようになる。Furthermore, since the MRAM element 11 is sealed by the magnetic shield member 14, it is effectively protected against magnetic flux from various directions. Therefore, the influence of the external magnetic field on the MRAM element 11 can be suppressed, and the recording holding reliability of the MRAM element 11 can be improved. Further, it becomes possible to suppress the generation of noise due to the switching of the transistor.
【００２４】また、この磁気シールドパッケージ１０で
は、ＭＲＡＭ素子１１全体が外部磁界から保護されてい
るため、例えば、ＭＲＡＭ素子１１の上部に軟磁性体プ
レートを形成したり、ＭＲＡＭ素子１１自体にパシベー
ション膜である軟磁性絶縁膜を形成したりする必要がな
い。Further, in the magnetic shield package 10, the entire MRAM element 11 is protected from the external magnetic field. Therefore, for example, a soft magnetic material plate is formed on the MRAM element 11 or a passivation film is formed on the MRAM element 11 itself. There is no need to form a soft magnetic insulating film.
【００２５】磁気シールドパッケージ１０の磁気シール
ド部材１４の形成には、種々の絶縁性軟磁性材料を用い
ることができる。このような絶縁性軟磁性材料として
は、ＮｉＺｎフェライト、ＭｎＺｎフェライト、ＭｇＭ
ｎフェライト、ＮｉＺｎＣｕフェライト、ＮｉＺｎＣｏ
フェライトなど、一般的にスピネル型構造をとる軟磁性
フェライト（ＭｅＦｅ2Ｏ4，Ｍｅ＝Ｍｎ，Ｆｅ，Ｃｏ，
Ｎｉ，Ｃｕ，Ｍｇ，Ｌｉ 0.5Ｆｅ0.5，ＮｉxＺｎ1-x，Ｍ
ｎxＺｎ1-x，ＮｉxＺｎyＣｕ1-x-y，ＮｉxＣｕ1- x，Ｎ
ｉxＣｕyＣｏ1-x-y，ＣｕxＺｎ1-x，ＬｉxＺｎ1-x，Ｍ
ｇxＭｎ1-x，ＮｉxＺｎyＣｏ1-x-y）が好適に用いられ
る。Magnetic seal of magnetic shield package 10
Various insulating soft magnetic materials are used to form the insulating member 14.
You can As such an insulating soft magnetic material
Is NiZn ferrite, MnZn ferrite, MgM
n-ferrite, NiZnCu ferrite, NiZnCo
Soft magnetic material that generally has a spinel structure, such as ferrite
Ferrite (MeFe2OFour, Me = Mn, Fe, Co,
Ni, Cu, Mg, Li 0.5Fe0.5, NixZn1-x, M
nxZn1-x, NixZnyCu1-xy, NixCu1- x, N
ixCuyCo1-xy, CuxZn1-x, LixZn1-x, M
gxMn1-x, NixZnyCo1-xy) Is preferably used
It
【００２６】このような軟磁性フェライトは、その軟磁
気特性により、前述のように、低周波磁界および高周波
磁界に対し、磁束の進路を変え、あるいはそのエネルギ
ーを吸収することで磁束の進入を抑制する効果を発現す
る。また、軟磁性フェライトは、電気抵抗が高く、磁気
シールド部材１４と磁気シールドパッケージ１０外部に
引き出される信号線との接触部分における短絡が防止さ
れる。Due to its soft magnetic characteristics, such a soft magnetic ferrite changes the course of the magnetic flux with respect to the low frequency magnetic field and the high frequency magnetic field, or absorbs the energy thereof, thereby suppressing the penetration of the magnetic flux. Manifest the effect of. Further, the soft magnetic ferrite has a high electric resistance, and a short circuit is prevented at the contact portion between the magnetic shield member 14 and the signal line drawn out of the magnetic shield package 10.
【００２７】また、磁気シールドパッケージ１０におい
て、信号線の磁気シールド部材１４と接触する部分に、
絶縁コーティングを施した構成とすれば、磁気シールド
部材１４を、導電性の軟磁性材料を用いて形成すること
も可能である。このような導電性軟磁性材料としては、
Ｆｅ，Ｃｏ，Ｎｉなどの軟磁性金属粉末や、ＦｅＮｉ，
ＦｅＣｏ，ＦｅＡｌ，ＦｅＳｉ，ＦｅＳｉＡｌ，ＦｅＳ
ｉＢ，ＣｏＳｉＢなどの高透磁率の軟磁性合金粉末が好
適に用いられる。In addition, in the magnetic shield package 10, the portion of the signal line that contacts the magnetic shield member 14 is
When the insulating coating is applied, the magnetic shield member 14 can be formed of a conductive soft magnetic material. As such a conductive soft magnetic material,
Soft magnetic metal powders such as Fe, Co and Ni, FeNi,
FeCo, FeAl, FeSi, FeSiAl, FeS
A high magnetic permeability soft magnetic alloy powder such as iB or CoSiB is preferably used.
【００２８】次に、具体例を挙げて磁気シールドパッケ
ージ１０の形成および効果について説明する。図５は形
成過程における磁気シールドパッケージの斜視図であ
る。Next, the formation and effects of the magnetic shield package 10 will be described with reference to specific examples. FIG. 5 is a perspective view of the magnetic shield package in the forming process.
【００２９】磁気シールド部材１４の絶縁性軟磁性材料
としては、公知のＮｉＺｎフェライトの（Ｎｉ0.3Ｚｎ
0.7）Ｆｅ2Ｏ4粉末を用いる。そして、このＮｉＺｎフ
ェライト粉末を、リードフレーム１３のＭＲＡＭ素子１
１実装面側の第１シールド部材１４ａと、ＭＲＡＭ素子
１１実装面と反対の面側の第２シールド部材１４ｂとに
分けて、それぞれ圧粉成形する。As the insulating soft magnetic material for the magnetic shield member 14, known NiZn ferrite (Ni 0.3 Zn) is used.
0.7 ) Fe 2 O 4 powder is used. Then, the NiZn ferrite powder is added to the MRAM element 1 of the lead frame 13.
The first shield member 14a on the first mounting surface side and the second shield member 14b on the surface side opposite to the mounting surface of the MRAM element 11 are divided and powder-molded respectively.
【００３０】ここで、第１シールド部材１４ａと第２シ
ールド部材１４ｂとは、後述する方法で双方を接着して
磁気シールド部材１４とした際に、リードフレーム１３
の一部が磁気シールド部材１４の外側へ出るような形状
および大きさで成形する。Here, when the first shield member 14a and the second shield member 14b are bonded to each other by the method described later to form the magnetic shield member 14, the lead frame 13 is formed.
Is shaped in such a shape and size that a part of the magnetic flux comes out of the magnetic shield member 14.
【００３１】このように成形された第１シールド部材１
４ａおよび第２シールド部材１４ｂは、その後、温度１
１００℃で５時間焼成され、焼結体とされる。この焼成
時には、成形体は熱収縮するため、第１シールド部材１
４ａおよび第２シールド部材１４ｂの形成にあたって
は、焼成時の成形体の収縮率を見込んで所定の大きさに
圧粉成形する。The first shield member 1 formed in this way
4a and the second shield member 14b are then heated to the temperature 1
It is fired at 100 ° C. for 5 hours to obtain a sintered body. During this firing, the molded body undergoes thermal contraction, so the first shield member 1
In forming the 4a and the second shield member 14b, the powder compacting is performed to a predetermined size in consideration of the shrinkage ratio of the compact during firing.
【００３２】ＭＲＡＭ素子１１は、公知の４２アロイを
用いてリードフレーム１３に接着し、その後、Ａｕ線の
ワイヤ１２で結線する。そして、このリードフレーム１
３のＭＲＡＭ素子１１実装面側とこの実装面と反対の面
側とからそれぞれ第１シールド部材１４ａと第２シール
ド部材１４ｂとを被せ、接着する。この接着の際には、
外部から磁束が進入しないように第１シールド部材１４
ａおよび第２シールド部材１４ｂを密着させることが重
要である。The MRAM element 11 is bonded to the lead frame 13 using a known 42 alloy, and then connected by the wire 12 of Au wire. And this lead frame 1
The third shield member 14a and the second shield member 14b are covered and adhered from the mounting surface side of the MRAM element 11 and the surface side opposite to the mounting surface. At the time of this adhesion,
The first shield member 14 so that the magnetic flux does not enter from the outside.
It is important that the a and the second shield member 14b are in close contact with each other.
【００３３】この密着は、通常の接着剤を用いて行うこ
とができるほか、絶縁性の磁性粉を含ませた接着樹脂な
ども好適に用いることができる。また、信号線が絶縁コ
ーティングされている場合には、導電性の磁性粉を含ま
せた接着樹脂を用いることも可能である。This adhesion can be performed by using an ordinary adhesive, and an adhesive resin containing an insulating magnetic powder can be preferably used. Further, when the signal line is insulation-coated, it is also possible to use an adhesive resin containing conductive magnetic powder.
【００３４】このように形成した磁気シールドパッケー
ジ１０による外部磁界の抑制効果について検証した。こ
こでは、ＭＲＡＭ素子１１およびリードフレーム１３の
代わりに、直径７ｍｍのループアンテナを、ＮｉＺｎフ
ェライトで形成した磁気シールド部材１４で密閉し、そ
の内部における磁界強度測定を行った。また、比較のた
め、非磁性のセラミックスのみで形成した磁気シールド
部材で密閉した場合の磁界強度測定も行った。The effect of suppressing the external magnetic field by the magnetic shield package 10 thus formed was verified. Here, instead of the MRAM element 11 and the lead frame 13, a loop antenna having a diameter of 7 mm was sealed with a magnetic shield member 14 made of NiZn ferrite, and the magnetic field strength inside thereof was measured. For comparison, the magnetic field strength was also measured when the magnetic shield member was made of only non-magnetic ceramics and sealed.
【００３５】その結果、ＮｉＺｎフェライトの磁気シー
ルド部材１４では、セラミックスの磁気シールド部材に
比べ、約９５％の磁界強度低減効果が得られた。磁気シ
ールド部材１４外部に磁界強度３００Ｏｅのモータを配
置した場合でも、磁気シールド部材１４内部の磁界強度
を３０Ｏｅ以下まで低減することができた。As a result, in the magnetic shield member 14 of NiZn ferrite, a magnetic field strength reduction effect of about 95% was obtained as compared with the magnetic shield member of ceramics. Even when a motor having a magnetic field strength of 300 Oe was arranged outside the magnetic shield member 14, the magnetic field strength inside the magnetic shield member 14 could be reduced to 30 Oe or less.
【００３６】以上示したように、絶縁性の軟磁性材料
（信号線を絶縁コーティングした場合は導電性の軟磁性
材料）で形成した磁気シールド部材１４によりＭＲＡＭ
素子１１を密閉することで、ＭＲＡＭ素子１１に対する
外部磁界の影響を抑制することができるようになる。し
たがって、ＭＲＡＭ素子１１の記録保持信頼性を向上さ
せることができる。As described above, the magnetic shield member 14 formed of the insulating soft magnetic material (the conductive soft magnetic material when the signal line is insulation-coated) is used for the MRAM.
By sealing the element 11, the influence of the external magnetic field on the MRAM element 11 can be suppressed. Therefore, the record holding reliability of the MRAM element 11 can be improved.
【００３７】また、近年では、高密度実装の要求から、
ＢＧＡ（Ball Grid Array）やＰＧＡ（Pin Grid Arra
y）といった実装形態が採用されることも多い。このよ
うな実装形態のＭＲＡＭ素子については、外部磁界の影
響を抑制するという点から、その磁気シールドパッケー
ジを、以下の図６ないし図１３に示すようなパッケージ
構造とすることも可能である。なお、図６ないし図１３
では、図３に示した構成要素と同一の要素については同
一の符号を付している。In recent years, due to the demand for high-density mounting,
BGA (Ball Grid Array) and PGA (Pin Grid Arra)
The implementation form such as y) is often adopted. Regarding the MRAM element of such a mounting form, the magnetic shield package may have a package structure as shown in FIG. 6 to FIG. 13 below in order to suppress the influence of the external magnetic field. 6 to 13
Then, the same components as those shown in FIG. 3 are designated by the same reference numerals.
【００３８】図６は第１のパッケージ構造の断面図、図
７は第２のパッケージ構造の断面図である。図６および
図７に示す第１，第２のパッケージ構造は、ともにＢＧ
Ａパッケージ構造になっている。FIG. 6 is a sectional view of the first package structure, and FIG. 7 is a sectional view of the second package structure. The first and second package structures shown in FIGS. 6 and 7 are both BG
It has an A package structure.
【００３９】この第１，第２のパッケージ構造では、Ｍ
ＲＡＭ素子１１がワイヤ１２で結線されているリードフ
レーム１３が、複数のボール電極１５を介して基板に接
続されるようになっている。そして、図６ではリードフ
レーム１３のＭＲＡＭ素子１１実装側の表面から上部
へ、図７ではリードフレーム１３の側面からＭＲＡＭ素
子１１実装側の上部へ、磁気シールド部材１４を設けて
いる。これにより、ＭＲＡＭ素子１１が磁気シールド部
材１４に囲まれて密閉され、外部磁界の磁束の進入が抑
制されるようになる。In the first and second package structures, M
A lead frame 13 in which the RAM element 11 is connected by wires 12 is connected to the substrate via a plurality of ball electrodes 15. In FIG. 6, the magnetic shield member 14 is provided from the surface of the lead frame 13 on the MRAM element 11 mounting side to the upper side, and in FIG. 7 from the side surface of the lead frame 13 to the MRAM element 11 mounting side upper side. As a result, the MRAM element 11 is enclosed and sealed by the magnetic shield member 14, and the entry of the magnetic flux of the external magnetic field is suppressed.
【００４０】図８は第３のパッケージ構造の断面図であ
る。図８に示す第３のパッケージ構造は、ＰＧＡパッケ
ージ構造になっており、さらに、ピン電極１６の先端部
にボール電極１５が設けられたＢＧＡタイプになってい
る。FIG. 8 is a sectional view of the third package structure. The third package structure shown in FIG. 8 is a PGA package structure, and is a BGA type in which a ball electrode 15 is provided at the tip of the pin electrode 16.
【００４１】この第３のパッケージ構造では、ピン電極
１６の先端部を外部に出すのみで、ワイヤ１２を含むＭ
ＲＡＭ素子１１の周囲を囲んで磁気シールド部材１４を
設けている。これにより、ＭＲＡＭ素子１１に対し、様
々な方向から作用する外部磁界の磁束の進入が抑制され
るようになる。In the third package structure, only the tip of the pin electrode 16 is exposed to the outside, and the M including the wire 12 is included.
A magnetic shield member 14 is provided so as to surround the RAM element 11. As a result, the magnetic flux of the external magnetic field acting from various directions is prevented from entering the MRAM element 11.
【００４２】図９は第４のパッケージ構造の断面図、図
１０は第５のパッケージ構造の断面図である。図９およ
び図１０に示す第４，第５のパッケージ構造は、ともに
ＢＧＡパッケージ構造になっている。FIG. 9 is a sectional view of the fourth package structure, and FIG. 10 is a sectional view of the fifth package structure. The fourth and fifth package structures shown in FIGS. 9 and 10 are both BGA package structures.
【００４３】この第４，第５のパッケージ構造では、Ｍ
ＲＡＭ素子１１上面、あるいは上面および側面に、磁気
シールド部材１４を設けている。これにより、ＭＲＡＭ
素子１１上面側からの磁束の進入を抑制することができ
る。In the fourth and fifth package structures, M
The magnetic shield member 14 is provided on the upper surface of the RAM element 11 or on the upper surface and side surfaces. This allows MRAM
The penetration of magnetic flux from the upper surface side of the element 11 can be suppressed.
【００４４】図１１は第６のパッケージ構造の断面図、
図１２は第７のパッケージ構造の断面図、図１３は第８
のパッケージ構造の断面図である。図１１ないし図１３
に示す第６，第７，第８のパッケージ構造のうち、第６
のパッケージ構造はＢＧＡパッケージ構造になってお
り、第７，第８のパッケージ構造はピン電極１６を有す
るＰＧＡパッケージ構造になっている。さらに、第８の
パッケージ構造では、ピン電極１６の先端にボール電極
１５が設けられたＢＧＡタイプになっている。FIG. 11 is a sectional view of the sixth package structure,
12 is a cross-sectional view of the seventh package structure, and FIG. 13 is the eighth view.
3 is a cross-sectional view of the package structure of FIG. 11 to 13
Of the sixth, seventh, and eighth package structures shown in
The package structure is a BGA package structure, and the seventh and eighth package structures are PGA package structures having pin electrodes 16. Further, the eighth package structure is of the BGA type in which the ball electrode 15 is provided at the tip of the pin electrode 16.
【００４５】この第６，第７，第８のパッケージ構造で
は、いずれも電極の一部を外部に出すのみで、ＭＲＡＭ
素子１１の周囲を取り囲んで磁気シールド部材１４を設
けている。これにより、図８に示した第３のパッケージ
構造と同様、ＭＲＡＭ素子１１の様々な方向から作用す
る外部磁界の磁束の進入が抑制されるようになる。In all of the sixth, seventh, and eighth package structures, only a part of the electrode is exposed to the outside, and the MRAM is
A magnetic shield member 14 is provided to surround the element 11. As a result, like the third package structure shown in FIG. 8, the penetration of the magnetic flux of the external magnetic field acting from various directions of the MRAM element 11 is suppressed.
【００４６】このように、ＭＲＡＭ素子１１がボール電
極１５やピン電極１６などの形状の電極を介して基板に
電気接続されるようなＢＧＡやＰＧＡといった実装形態
をとるパッケージ構造であっても、外部磁界に対する磁
気シールドが可能である。As described above, even if the package structure is such that the MRAM element 11 is electrically connected to the substrate through the electrodes such as the ball electrode 15 and the pin electrode 16 such as BGA or PGA, the package structure is external. Magnetic shielding against magnetic fields is possible.
【００４７】なお、以上の説明では、ＭＲＡＭ素子１１
を磁気シールド部材１４で密閉する構成としたが、ＭＲ
ＡＭ素子１１以外の他の能動素子、部品などを組み込ん
だマルチチップモジュール全体を磁気シールド部材で密
閉するように構成することも可能である。これにより、
モジュール全体を外部磁界から保護することができ、よ
り信頼性の高いモジュール形成が可能になる。In the above description, the MRAM element 11
The magnetic shield member 14 is used to seal the
It is also possible to configure the whole multi-chip module in which other active elements and parts other than the AM element 11 are incorporated, to be sealed with a magnetic shield member. This allows
The entire module can be protected from an external magnetic field, and a more reliable module can be formed.
【００４８】また、以上の説明では、絶縁性の軟磁性材
料（信号線を絶縁コーティングした場合は導電性の軟磁
性材料）で磁気シールド部材１４を形成するようにし
た。本発明では、このほかに、磁性または非磁性の成形
体の表面に、絶縁性または導電性の軟磁性材料からなる
膜を形成することによっても、ＭＲＡＭ素子１１を外部
磁界から保護することが可能である。Further, in the above description, the magnetic shield member 14 is formed of an insulating soft magnetic material (a conductive soft magnetic material when the signal line is insulation coated). In addition to the above, in the present invention, the MRAM element 11 can be protected from the external magnetic field by forming a film made of an insulating or conductive soft magnetic material on the surface of a magnetic or non-magnetic molded body. Is.
【００４９】[0049]
【発明の効果】以上説明したように本発明では、ＭＲＡ
Ｍ素子を、軟磁性材料を用いて形成された磁気シールド
部材で囲み、密閉状態で配置する構成にした。これによ
り、低周波数から高周波数に渡る外部磁界に対し、ＭＲ
ＡＭ素子への磁束の進入が抑制され、その記録保持信頼
性を向上させることができる。As described above, according to the present invention, the MRA
The M element is surrounded by a magnetic shield member formed of a soft magnetic material and is arranged in a hermetically sealed state. As a result, the MR of the external magnetic field from low frequency to high frequency is
It is possible to suppress the magnetic flux from entering the AM element and improve the reliability of record holding.
【図１】ＭＲＡＭ素子の磁気シールドパッケージの平面
図である。FIG. 1 is a plan view of a magnetic shield package for an MRAM device.
【図２】ＭＲＡＭ素子の磁気シールドパッケージの側面
図である。FIG. 2 is a side view of a magnetic shield package of an MRAM device.
【図３】図１のＡ−Ａ断面図である。3 is a cross-sectional view taken along the line AA of FIG.
【図４】ＭＲＡＭ素子の磁気シールドパッケージにおけ
る磁気シールド機構の説明図である。FIG. 4 is an explanatory diagram of a magnetic shield mechanism in the magnetic shield package of the MRAM element.
【図５】形成過程における磁気シールドパッケージの斜
視図である。FIG. 5 is a perspective view of a magnetic shield package in a forming process.
【図６】第１のパッケージ構造の断面図である。FIG. 6 is a cross-sectional view of the first package structure.
【図７】第２のパッケージ構造の断面図である。FIG. 7 is a cross-sectional view of a second package structure.
【図８】第３のパッケージ構造の断面図である。FIG. 8 is a cross-sectional view of a third package structure.
【図９】第４のパッケージ構造の断面図である。FIG. 9 is a cross-sectional view of a fourth package structure.
【図１０】第５のパッケージ構造の断面図である。FIG. 10 is a cross-sectional view of a fifth package structure.
【図１１】第６のパッケージ構造の断面図である。FIG. 11 is a cross-sectional view of a sixth package structure.
【図１２】第７のパッケージ構造の断面図である。FIG. 12 is a cross-sectional view of a seventh package structure.
【図１３】第８のパッケージ構造の断面図である。FIG. 13 is a sectional view of an eighth package structure.
【図１４】ＭＲＡＭ素子に外部から作用すると想定され
る磁界強度の例を示す図である。FIG. 14 is a diagram showing an example of magnetic field strength assumed to act on the MRAM element from the outside.
１０……磁気シールドパッケージ、１１……ＭＲＡＭ素
子、１２……ワイヤ、１３……リードフレーム、１４…
…磁気シールド部材、１４ａ……第１シールド部材、１
４ｂ……第２シールド部材、１５……ボール電極、１６
……ピン電極。10 ... Magnetic shield package, 11 ... MRAM element, 12 ... Wire, 13 ... Lead frame, 14 ...
... Magnetic shield member, 14a ... First shield member, 1
4b ... second shield member, 15 ... ball electrode, 16
...... Pin electrode.
フロントページの続き (72)発明者 元吉 真 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 Ｆターム(参考） 5F083 FZ10 GA11 ZA23 Continued front page (72) Inventor Makoto Motoyoshi 6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Soni -Inside the corporation F term (reference) 5F083 FZ10 GA11 ZA23
Claims (5)
界の影響を抑制する磁気不揮発性メモリ素子の磁気シー
ルドパッケージにおいて、 磁気不揮発性メモリ素子が、軟磁性材料を用いて形成さ
れた磁気シールド部材に囲まれて密閉状態で配置されて
いることを特徴とする磁気不揮発性メモリ素子の磁気シ
ールドパッケージ。1. A magnetic shield package for a magnetic non-volatile memory element for suppressing the influence of an external magnetic field on the magnetic non-volatile memory element, wherein the magnetic non-volatile memory element is surrounded by a magnetic shield member formed of a soft magnetic material. A magnetic shield package for a magnetic non-volatile memory device, wherein the magnetic shield package is arranged in a sealed state.
たは電極が外部に引き出されていることを特徴とする請
求項１記載の磁気不揮発性メモリ素子の磁気シールドパ
ッケージ。2. The magnetic shield package for a magnetic non-volatile memory device according to claim 1, wherein signal lines or electrodes of the magnetic non-volatile memory device are extended to the outside.
あることを特徴とする請求項１記載の磁気不揮発性メモ
リ素子の磁気シールドパッケージ。3. The magnetic shield package for a magnetic nonvolatile memory element according to claim 1, wherein the soft magnetic material is soft magnetic ferrite.
ーティングが施されているときには、軟磁性金属または
軟磁性合金であることを特徴とする請求項２記載の磁気
不揮発性メモリ素子の磁気シールドパッケージ。4. The magnetic non-volatile memory device according to claim 2, wherein the soft magnetic material is a soft magnetic metal or a soft magnetic alloy when the signal line is coated with an insulating coating. Shield package.
記軟磁性材料の膜が形成されていることを特徴とする請
求項１記載の磁気不揮発性メモリ素子の磁気シールドパ
ッケージ。5. The magnetic shield package for a magnetic nonvolatile memory element according to claim 1, wherein the magnetic shield member has a film of the soft magnetic material formed on a surface thereof.
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| JP2002112877A JP3879576B2 (en) | 2002-04-16 | 2002-04-16 | Magnetic non-volatile memory element magnetic shield package |
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|---|---|---|---|
| JP2002112877A JP3879576B2 (en) | 2002-04-16 | 2002-04-16 | Magnetic non-volatile memory element magnetic shield package |
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| JP2003309196A true JP2003309196A (en) | 2003-10-31 |
| JP3879576B2 JP3879576B2 (en) | 2007-02-14 |
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| JP2002112877A Expired - Fee Related JP3879576B2 (en) | 2002-04-16 | 2002-04-16 | Magnetic non-volatile memory element magnetic shield package |
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