WO2011111789A1 - Magnetic device and process for production thereof - Google Patents

Magnetic device and process for production thereof Download PDF

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Publication number
WO2011111789A1
WO2011111789A1 PCT/JP2011/055687 JP2011055687W WO2011111789A1 WO 2011111789 A1 WO2011111789 A1 WO 2011111789A1 JP 2011055687 W JP2011055687 W JP 2011055687W WO 2011111789 A1 WO2011111789 A1 WO 2011111789A1
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WO
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Prior art keywords
magnetic
shield
upper
lower
magnetic device
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PCT/JP2011/055687
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French (fr)
Japanese (ja)
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敬仁 渡邊
眞子 隆志
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日本電気株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/08Magnetic-field-controlled resistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15182Fan-in arrangement of the internal vias
    • H01L2924/15184Fan-in arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

Disclosed is a magnetic device comprising a magnetic element and a magnetic shield having an opening. The magnetic shield comprises an upper part and a lower part which overlap each other in a shield region of the magnetic shield, and also comprises a side part which physically connects the upper part to the lower part. The magnetic element is arranged between the upper part and the lower part without getting out of the shield region.

Description

Magnetic device and manufacturing method thereof

The present invention relates to a magnetic device and a manufacturing method thereof having a magnetic shield.

Magnetic device that uses a magnetic material is known. For example, a magnetoresistive element (MagnetoResistance Element) is a magnetic device whose resistance varies according to the magnetization state of a magnetic material. Typical magnetoresistive element, a nonmagnetic layer to the magnetic layer of the two layers has a sandwiched structure. One of the magnetic layers is a magnetization fixed layer whose magnetization direction is fixed, the other is a magnetization free layer a reversible magnetization direction. Resistance of the thus configured magnetoresistive element than when the magnetization directions of the magnetization fixed layer and the magnetization free layer are parallel to each other, the higher the when they are antiparallel. By using such a magneto-resistive element, magnetic random access memory (MRAM: Magnetic Random Access Memory) and is configurable to a variety of logic circuits.

In magnetic device using a magnetic device, for its normal operation, it is important to prevent the magnetization state of a magnetic material (the magnetization direction or the like) varies by an external disturbance. Therefore, generally, "magnetic shield (Magnetic shield)" is utilized.

Patent Document 1, MRAM package is disclosed. According to the MRAM package around the MRAM chip, except for the portion of the electrode pad that interfaces with the outside, it is covered with a magnetic shield of high magnetic permeability material. Conversely, the magnetic shield has an opening at a position corresponding to the electrode pads of the MRAM chip.

JP 2003-115578 JP

Magnetic shield disclosed in Patent Document 1 has an opening at a position corresponding to the electrode pads of the MRAM chip. That is, the magnetic shield includes a number of openings are formed in a distributed manner, MRAM chip overlaps with their multiple openings. However, in a region overlapping the opening for the shielding effect is significantly deteriorated, and the reliability of the MRAM chip is reduced.

The magnetic shield described in Patent Document 1, around the MRAM chip, except for a portion of the electrode pad that interfaces with the outside, is covered with the magnetic shielding material of high magnetic permeability, the MRAM chip step of covering substantially all of the periphery in the high-permeability material is required. For this reason, a bad production efficiency.

An object of the present invention, can be easily manufactured, and is to provide a magnetic device and a manufacturing method thereof capable of improving the magnetic shielding effect.

In one aspect of the present invention, magnetic device is provided. Its magnetic device comprises a magnetic device, a magnetic shield having an opening, the. Magnetic shield is provided with upper and lower overlapping each other in the shield region, and a side portion which physically connects the upper and lower. The magnetic device is arranged between the upper and lower without protruding from the shield area.

In another aspect of the present invention, a manufacturing method of the magnetic device is provided. Its preparation method includes creating (A) magnetic device, and a to a magnetic shield is arranged around the magnetic device having a (B) opening. Magnetic shield is provided with upper and lower overlapping each other in the shield region, and a side portion which physically connects the upper and lower. The magnetic device is arranged between the upper and lower without protruding from the shield region, and are externally electrically connected through the opening.

In yet another aspect of the present invention, the upper and lower overlapping each other in the shield region, the upper magnetic shield comprising a side to physically connect between the lower and the upper, and the opening, the wherein said shield region between the lower, placing the magnetic element without protruding from the shield region, the manufacturing method of the magnetic device is provided with.

In yet another aspect of the present invention, the periphery of the magnetic element provided on a substrate, physically connected between the upper and lower overlapping each other in the shield region, and the lower and the upper side When, as from the shield region between the opening and the upper magnetic shield comprising said lower does not protrude said magnetic device, placing the magnetic shield method for manufacturing a magnetic device is provided that.

According to the present invention, the reliability of the magnetic device comprising a magnetic shield is improved. Further, according to the present invention, it is possible to simplify the manufacturing process of the magnetic device.

The above and other objects, advantages, features will become apparent by embodiments of the present invention described in conjunction with the following drawings.

Figure 1 is a schematic diagram showing a basic structure of a magnetic device according to an embodiment of the present invention. Figure 2A is an overall diagram illustrating the complete sealing type magnetic shield model. Figure 2B is a bottom view of the magnetic shield model shown in Figure 2A. Figure 2C is a graph showing a simulation result in the XY plane. Figure 2D is a YZ sectional view of the magnetic shield model shown in Figure 2A. Figure 2E is a graph showing a simulation result in the YZ plane. Figure 3A is an overall view showing a magnetic shield model of the basic structure types. Figure 3B is a bottom view of the magnetic shield model shown in Fig 3A. Figure 3C is a graph showing a simulation result in the XY plane. Figure 3D is a YZ sectional view of the magnetic shield model shown in Fig 3A. Figure 3E is a graph showing a simulation result in the YZ plane. Figure 3F is a conceptual diagram illustrating the magnetic field condition in the case of the basic structure type. Figure 4A is an overall view showing a magnetic shield model of parallel plate type. Figure 4B is a bottom view of the magnetic shield model shown in Figure 4A. Figure 4C is a graph showing a simulation result in the XY plane. Figure 4D is a YZ sectional view of the magnetic shield model shown in Figure 4A. Figure 4E is a graph showing a simulation result in the YZ plane. Figure 4F is a schematic view showing a magnetic field state when the parallel plate type. Figure 5A is an overall view showing a magnetic shield model mesh. Figure 5B is a bottom view of the magnetic shield model shown in Figure 5A. Figure 5C is a graph showing a simulation result in the XY plane. 5D is a YZ sectional view of the magnetic shield model shown in Figure 5A. Figure 5E is a graph showing a simulation result in the YZ plane. Figure 6 is a schematic view showing a structural example of a magnetic device according to the present embodiment. Figure 7 is a schematic view showing another structural example of a magnetic device according to the present embodiment. Figure 8 is a schematic view showing still another structural example of a magnetic device according to the present embodiment. Figure 9 is a schematic view showing still another structural example of a magnetic device according to the present embodiment. Figure 10 is a schematic view showing still another structural example of a magnetic device according to the present embodiment. Figure 11 is a schematic view showing still another structural example of a magnetic device according to the present embodiment. Figure 12 is a sectional view showing an example of the package structure of the magnetic device of the present embodiment. Figure 13 is a bottom view of the indicated package structure in FIG. Figure 14 is a sectional view showing another example of the package structure of the magnetic device of the present embodiment. Figure 15 is a top view showing a tip structure of the package structure shown in FIG. 14.

With reference to the accompanying drawings, an embodiment of the present invention.

1. Basic Structure Figure 1 is a schematic diagram showing the basic structure of the magnetic device 1 according to the embodiment of the present invention. Magnetic apparatus 1 is provided with a magnetic element 10 and a magnetic shield 100. In the following description, the Z direction is a vertical direction, X direction and Y direction perpendicular to the Z direction is a plan direction.

The magnetic device 10 is a device that uses a magnetic material. Typically, the magnetic device 10 utilizes a perpendicular magnetic film (perpendicular magnetic film) having a perpendicular magnetic anisotropy of the Z-direction. The magnetic device 10, a magnetoresistive element, MRAM chip, such as logic circuits and the like which utilizes a magnetoresistive element.

The magnetic shield 100 is formed of a soft magnetic material. The soft magnetic material (preferably, 1000 or more) sufficiently high relative permeability has a. The soft magnetic material, iron, nickel, silicon steel, permalloy, ferrite, amorphous magnetic alloy, and a nanocrystal magnetic alloy.

In Figure 1, the magnetic shield 100 is disposed around the magnetic device 10, not the magnetic element 10 is fully closed. That is, the magnetic shield 100 shown in Figure 1, in addition to the shield portion disposed around the magnetic device 10 has an opening portion 150. Its shield includes an upper 110, a lower 120 and side 130. Top 110 and bottom 120 are spaced apart in the Z direction, and a space is formed between the upper 110 and lower 120. Further, overlap each other and the upper 110 and lower 120. Region where the upper 110 and lower 120 are overlapped with each other is referred to as a "shield region RS" below. Side 130 is physically connected between these upper 110 and lower 120. That is, the magnetic shield 100 shown in FIG. 1 includes a when viewed from the side "U-shaped".

According to this embodiment, the magnetic element 10 is arranged in the space between the upper 110 and lower 120, and does not protrude from the shield region RS. Furthermore, the magnetic element 10, through the opening 150 of the magnetic shield 100, an external electrically connectable.

The present inventor has the advantage of the basic structure shown in Fig. 1 was verified through simulation. Hereinafter will be described a simulation conducted by the present inventor in detail.

2. In the simulation the simulation, the magnetic shield various models of structures to be next described were prepared. In each of the magnetic shield model, the thickness of the magnetic substance is 0.15 [mm], the magnetic permeability is 2000, its saturation magnetic flux density is 1 [T]. The magnetic shield model inside the -Z direction magnetic field when uniform external magnetic field He = 250 [Oe] is applied to the -Z direction was calculated by simulation. In the following description, with respect to the direction of the magnetic field, and -Z direction is the positive direction. As -Z direction magnetic field calculated by the simulation is small, it can be said that the shielding effect is high.

2-1. Fully enclosed (Comparative Example)
Figure 2A shows a magnetic shielding model "fully enclosed". Top 110 and bottom 120 is parallel to the XY plane. Side 130 is parallel to the XZ plane or YZ plane, completely covers the side periphery. That is, the magnetic shield model illustrated in Figure 2A does not have the opening 150. Coordinate range in the X direction is -10.15 [mm] <X <+10.15 [mm]. Coordinate range in the Y direction is -10.15 [mm] <Y <+10.15 [mm]. Coordinate range in the Z direction is -0.15 [mm] <Z <+2.15 [mm].

Figure 2B is a bottom view of the magnetic shield model shown in Figure 2A, Figure 2C shows the simulation results in the XY plane (Z-coordinate = 0.1 [mm]). Further, FIG. 2D is a YZ sectional view of the magnetic shield model shown in FIG. 2A, FIG. 2E shows the simulation result of the YZ plane (X-coordinate = 0). As seen from FIG. 2B ~ Figure 2E, which provides excellent shielding effect.

However, in the case of fully enclosed, since the opening 150 is not present, it is not possible to connect the magnetic shield 100 inside of the magnetic element 10 to the outside electrically. That is, fully enclosed type, in reality it is unusable.

2-2. Basic Structure plots 3A shows a magnetic shielding model having the basic structure shown in FIG. That is, the magnetic shield model shown in Figure 3A includes an opening 150. More specifically, each of the XY plane parallel to the upper 110 and lower 120 is formed in a range of -10.15 [mm] <Y <-6 [mm]. As between the upper 110 and lower 120, it is physically connected by one side 130 parallel to the XZ plane. Other side peripheral is open. Coordinate range of X and Z directions are the same as in Figure 2A.

Figure 3B is a bottom view of the magnetic shield model shown in FIG. 3A, FIG. 3C shows a simulation result in the XY plane (Z-coordinate = 0.1 [mm]). Further, FIG. 3D is a YZ sectional view of the magnetic shield model shown in Figure 3A, Figure 3E shows the simulation result of the YZ plane (X-coordinate = 0). As seen from FIG. 3B ~ Figure 3E, the shielding region RS and the upper 110 and lower 120 overlap each other, an excellent shielding effect is obtained. Moreover, the shielding effect is substantially equal to that of fully enclosed above. That is, if not completely closed, the basic structure for superior shielding effect at least in the shielding region RS.

Figure 3F is a conceptual diagram illustrating the magnetic field condition in the case of the basic structure type. As described above, when the basic structure type, the upper 110 and lower 120 are physically connected by the side 130, they top 110, bottom 120 and sides 130 are integrally formed shield . When an external magnetic field He is applied, the shield portion of the integral is as one magnet. For -Z direction of the external magnetic field He, upper 110 becomes S pole, and the lower 120 is N pole. By their N and S poles, the space between the upper 110 and lower 120, canceling the magnetic field Hc of the external magnetic field He and reverse (+ Z direction) is generated. Since the magnetic field of the space between the upper 110 and lower 120 obtained by superposition of the external magnetic field He and cancellation magnetic field Hc, excellent shielding effect in the space is achieved.

Thus, even when the basic structure is not a completely sealed, shielding effect excellent at least in the shielding region RS is obtained. According to this embodiment, the magnetic element 10 is arranged so as not to protrude from the shield region RS. Therefore, the magnetization state of a magnetic material in the magnetic element 10 is prevented from being varied by a vertical direction of the external magnetic field He. This means an improvement in reliability of the magnetic device 1. This effect, when the magnetic device 10 includes a perpendicular magnetization film having a perpendicular magnetic anisotropy of the Z-direction, which is particularly noticeable.

Furthermore, unlike the fully enclosed, the magnetic shield 100 of the base structure has an opening 150. Therefore, the magnetic shield 100 inside of the magnetic element 10, it is possible to electrically connected to the outside through the opening 150.

2-3. Parallel plate (Comparative Example)
4A shows the magnetic shield model "parallel plate". Figure 4B is a bottom view of the magnetic shield model shown in FIG. 4A, FIG. 4C shows the simulation results in the XY plane (Z-coordinate = 0.1 [mm]). Further, FIG. 4D is a YZ sectional view of the magnetic shield model shown in FIG. 4A, FIG. 4E shows the result of simulation the YZ plane (X-coordinate = 0).

Parallel plate type is equivalent to the side 130 is omitted from the fully enclosed shown in Figure 2A. That is completely separate from the upper 110 and lower 120. Others are the same as in Figure 2A. As seen from FIG. 4B ~ Figure 4E, the shielding effect is not obtained at all.

Figure 4F is a schematic view showing a magnetic field state when the parallel plate type. For a parallel plate, it is only placed external magnetic field separate plate magnetic material in the He (110, 120) Gatada simply cancel the magnetic field Hc does not occur between them two plate magnetic material. In order to generate a cancellation magnetic field Hc as shown in FIG. 3F, it is important that the top 110 to bottom 120 are physically contiguous. That is, the side 130 that physically connects the upper 110 and lower 120 are important.

2-4. Mesh Figure 5A shows a magnetic shielding model "mesh". Figure 5B is a bottom view of the magnetic shield model shown in Figure 5A, Figure 5C shows the simulation result in the XY plane (Z-coordinate = 0.1 [mm]). Further, FIG. 5D is a YZ sectional view of the magnetic shield model shown in Figure 5A, Figure 5E shows the result of simulation the YZ plane (X-coordinate = 0).

Mesh corresponds to a plurality of openings OP are formed in the lower portion 120 of the fully enclosed shown in Figure 2A. Others are the same as in Figure 2A. As seen from FIG. 5B ~ Figure 5E, the opening OP and overlapping areas, the shielding effect is significantly deteriorated. Therefore, it is arranged so as to overlap MRAM chip and the opening OP as in Patent Document 1 described above is not preferable. As shown in FIG. 1, it is preferable that the magnetic device 10 are arranged so as not protrude from the shield region RS.

3. Various structural examples 6 shows a structural example of a magnetic device 1 according to this embodiment. Between the upper 110A and lower 120A are physically connected by the side 130A. Further, between the upper 110B and lower 120B are physically connected by the side 130B. Magnetic element 10A is disposed sandwiched between the upper 110A and lower 120A space, via the electrical connection member 20A through the opening 150A, it is electrically connected to the external. Magnetic element 10B is disposed sandwiched between the upper 110B and lower 120B space, via the electrical connection member 20B through the opening 150B, it is electrically connected to the external.

Figure 7 shows another example of the configuration of the magnetic apparatus 1 according to this embodiment. One end of the upper 110 is physically connected to the lower 120A through the side 130A, the other end of the upper 110, is physically connected to the lower 120B through the side 130B. Side 130A, 130B are opposed to each other. Opening 150 is formed between the lower 120A and the lower 120B. Magnetic element 10A is disposed sandwiched between the upper 110 and lower 120A space, via the electrical connection member 20A through the opening 150 and is electrically connected to the external. Magnetic element 10B is disposed sandwiched between the upper 110 and lower 120B space, via the electrical connection member 20B through the opening 150 and is electrically connected to the external.

Figure 8 shows still another example of the structure of the magnetic device 1 according to this embodiment. One end of the lower 120 is physically connected to the upper 110A through the side 130A, the other end of the lower 120 is physically connected to the upper 110B through the side 130B. Side 130A, 130B are opposed to each other. Opening 150 is formed between the upper 110A and the upper 110B. Magnetic element 10A is disposed sandwiched between the upper 110A and lower 120 space, via the electrical connection member 20A through the opening 150 and is electrically connected to the external. Magnetic element 10B is disposed sandwiched between the upper 110B and lower 120 space, via the electrical connection member 20B through the opening 150 and is electrically connected to the external.

Figure 9 shows still another example of the structure of the magnetic device 1 according to this embodiment. Between the upper 110A and lower 120A it is physically connected by a common side 130, between the upper 110B and lower 120B are physically connected by a common side 130. Magnetic element 10A is disposed sandwiched between the upper 110A and lower 120A space, via the electrical connection member 20A through the opening 150A, it is electrically connected to the external. Magnetic element 10B is disposed sandwiched between the upper 110B and lower 120B space, via the electrical connection member 20B through the opening 150B, it is electrically connected to the external.

Figure 10 shows still another example of the structure of the magnetic device 1 according to this embodiment. As shown in FIG. 10, between the top 110 and bottom 120 may be smoothly connected via the side 130.

Figure 11 shows still another example of the structure of the magnetic device 1 according to this embodiment. As shown in FIG. 11, the width of the side 130 may be different from the width of the upper 110 and lower 120. Side 130 need only be physically connects the upper 110 and lower 120.

Above, the magnetic shield according to the basic structure type and various structural example can be applied from the device-level shield package shield, the shield of the apparatus level, the various levels of the magnetic shield. The device-level shield, magnetic shield for shielding the magnetic device, such as MRAM provided in the semiconductor interlayer insulating film, refers to a shield that is built in a semiconductor interlayer insulating film. It will be described in detail the structure example of a package shield.

4. Structure of the package 12 are sectional views showing an example of the package structure of the magnetic device 1 according to this embodiment. Figure 13 is a bottom view of the indicated package structure in FIG.

As the substrate 30, for example, an interposer is used. On the surface of the substrate 30, the chip 50 through a DAF (Die Attach Film) 40 is mounted. A plurality of chips 50 may be stacked via a spacer 60. Pads of each chip 50 is electrically connected to the substrate 30 via a bonding wire 70. Such a structure is sealed with a molding resin (molding compound) 80, it is packaged. In this embodiment, BGA (Ball Grid Array) package is envisaged. External terminals 90 (solder balls: solder ball) on the back surface of the substrate 30 is formed. Each chip 50 is connected via a bonding wire 70 and the substrate 30 inside the wiring are electrically connected to the external terminal 90.

In this embodiment, the magnetic shield 100 is formed around the package. Each chip 50 is equivalent to the magnetic device 10 is disposed so as not to protrude from the shield region RS. As shown in FIG. 13, the external terminals 90 is disposed in the opening 150 is not a shield region RS. In the present example, the bonding wire 70 and the external terminal 90 corresponds to the above-described electric connection member 20.

The magnetic shield 100 may be a metal magnetic shield formed of a conductive magnetic material. In that case, the electromagnetic wave shielding is also achieved by grounding the metal magnetic shield 100, which is preferable.

Package structure shown in FIGS. 12 and 13 is manufactured as follows. First, in the previous step, the chip 50 is created. Then, in a later step, the packaging is carried out. Specifically, the chip 50 is mounted on the substrate 30, the bonding wire 70 is formed, further, resin sealing is performed by the molding resin 80. After the packaging, the magnetic shield 100 is placed over the package. At this time, chip 50 does not protrude from the shield region RS of the magnetic shield 100. The tip 50, through the external terminals 90 described above disposed in the opening 150 of the magnetic shield 100 is electrically connected to the external. Incidentally, prepared magnetic shield 100 above, in a region that does not protrude from the shield region RS of the magnetic shield 100, it may be disposed chip 50.

Figure 14 is a sectional view showing another example of the package structure of the magnetic device 1 according to this embodiment. In this embodiment, the magnetic shield 100, the periphery of the chip 50, the insulating member 65: are formed through the (eg a thermoplastic resin (thermoplastic resin)). As shown in FIG. 15, the chip 50 is magnetic device 10 (eg: MRAM cell) Includes their magnetic device 10 is formed so as not to protrude from the shield region RS. The magnetic shield 100 has an opening 150 upwardly. As shown in FIG. 15, the pads 55 of the chip 50 is disposed in the opening 150 is not a shield region RS.

As the substrate 30, for example, an interposer is used. On the surface of the substrate 30, via the DAF40, tip 50 surrounded by the magnetic shield 100 is mounted. Pads 55 of the chip 50 is electrically connected to the substrate 30 via a bonding wire 70. Such a structure is sealed with a molding resin 80, are packaged. In this example, BGA packages are contemplated. The rear surface of the substrate 30 external terminal 90 (solder balls) are formed. Chip 50 via a bonding wire 70 and the substrate 30 inside the wiring are electrically connected to the external terminal 90. In this embodiment, pads 55, bonding wires 70 and the external terminal 90 corresponds to the above-described electric connection member 20.

Package structure shown in FIGS. 14 and 15 is manufactured as follows. First, in the previous step, the chip 50 is created. Then, in a later step, the magnetic shield 100 is provided. More specifically, the magnetic shield 100 is placed over the chip 50. At this time, the magnetic element 10 in the chip 50, does not protrude from the shield region RS of the magnetic shield 100. Thereafter, the packaging is carried out. Specifically, the chip 50 of the magnetic shield 100 is covered is mounted on the substrate 30. Pads 55 disposed in the opening 150 of the magnetic shield 100 is electrically connected to the substrate 30 via a bonding wire 70. Further, resin sealing is performed by the molding resin 80.

Respect package structure shown in FIGS. 12 to 15, note the following. That is, the magnetic shield 100, in a step after the post-chip creation completion, is added to the magnetic device 1. Case of the example shown in FIG. 12, the magnetic shield 100, after the packaging process, is put on the package. Case of the example shown in FIG. 13, the magnetic shield 100, prior to the packaging process, is put on the chip 50.

As a comparative example, consider the technique described in Patent Document 1 (JP 2003-115578). According to the art, the magnetic shield of high permeability material is formed in is carried out in a state of the wafer "pre-process (diffusion process)". For example, if the perpendicular magnetization film is used, by sputtering, NiFe film is 0.2μm about deposition. Alternatively, if the in-plane magnetization film is used, by electroless plating, NiFe film is 10μm approximately deposition. However, given the saturation magnetization, the thickness of NiFe, are necessary about 100μm at a minimum. The thickness of about 0.2μm and 10 [mu] m, the magnetic material is saturated, the desired shielding effect is not obtained. However, before when it comes to form a 100μm or more film by sputtering or electroless plating in the process, the production efficiency is remarkably lowered. Further, the magnetic film formed by sputtering or electroless plating, it is difficult uniform film control.

According to the present embodiment, these problems can be solved all. That is, in a later step, only covered with a magnetic shield 100 to the package or chip 50, it is possible to realize a structure that produces a good shielding effect. Production efficiency is very high.

Above, embodiments of the present invention have been described above with reference to the attached drawings. However, the present invention is not limited to the above embodiments and can be appropriately modified by those skilled in the art without departing from the scope.

This application claims priority based on Japanese Patent Application 2010-053643, filed on March 10, 2010, the entire disclosure of which is incorporated herein.

Claims (7)

  1. And the magnetic element,
    And a magnetic shield having an opening,
    The magnetic shield,
    And upper and lower overlapping each other in the shield region,
    And a side portion which physically connects between the lower and the upper,
    The magnetic element, magnetic devices are disposed between the upper and the lower without protruding from the shield area.
  2. A magnetic device according to claim 1,
    The magnetic element, magnetic device comprising a perpendicular magnetization film.
  3. A magnetic device according to claim 1 or 2,
    The magnetic element is a chip mounted on a substrate,
    The magnetic shield, magnetic devices are formed around the package containing the substrate and the chip.
  4. A magnetic device according to claim 1 or 2,
    Further comprising a chip including the magnetic element,
    The magnetic shield is formed around the chip,
    The magnetic shield the chip surrounded by the magnetic device mounted on a substrate.
  5. Said shield between the upper and lower overlapping each other in the shield region, and the side that physically connects between the lower and the upper, and the opening portion, and the lower and the upper magnetic shield comprising the area, arranging the magnetic element without protruding from the shield region, the manufacturing method of the magnetic device.
  6. Around the magnetic element provided on a substrate, a magnetic comprising upper and lower overlapping each other in the shield region, and the side that physically connects between the lower and the upper, and the opening, the as from the shield region between the upper and the lower shield does not protrude said magnetic device, placing the magnetic shield method for manufacturing a magnetic device.
  7. Wherein the periphery of the magnetic element, after the resin sealing was performed by a mold resin, arranging the magnetic shield so as to cover the mold resin, the manufacturing method of the magnetic device of claim 6.
PCT/JP2011/055687 2010-03-10 2011-03-10 Magnetic device and process for production thereof WO2011111789A1 (en)

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JP2010053643 2010-03-10

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JP2016070848A (en) * 2014-09-30 2016-05-09 株式会社東芝 Magnetic shield package
KR20160070695A (en) 2014-12-10 2016-06-20 가부시키가이샤 제이디바이스 Magnetic shielding package of non-volatile magnetic memory element

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