JP2003273275A - High-frequency composite component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve temperature characteristics of a high-frequency composite component used for an RF circuit for a communication device or the like. <P>SOLUTION: The high-frequency composite component comprises a temperature depending component 10 on a laminated board 7 for forming a high-frequency circuit, and a heat shielding layer 12 formed on the upper layer part of a high-frequency circuit layer 10 on the inner layer part of the board 7. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency composite component mainly used in an RF circuit such as a communication device.

[0002]

2. Description of the Related Art In recent years, with the progress of compounding high-frequency components, temperature-dependent components such as gallium arsenide FETs which are easily affected by heat are mounted on a laminated substrate forming a high-frequency circuit such as a high-frequency filter. Is being considered.

[0003]

However, in a high frequency circuit with insertion loss such as a high frequency filter, heat is generated by power supply from a power amplifier (hereinafter referred to as "PA"), and this heat is laminated. It is transmitted to the temperature-dependent components mounted on the substrate, and the electrical characteristics of the temperature-dependent components deteriorate as the temperature rises, resulting in poor temperature characteristics of the high-frequency composite component.

Therefore, an object of the present invention is to solve such problems and improve the temperature characteristics of high frequency composite parts.

[0005]

In order to achieve this object, the invention according to claim 1 of the present invention provides a heat shield layer on an upper layer portion of a high frequency circuit layer and arranges a temperature dependent component on the heat shield layer. As a result, heat generation from the high frequency circuit with respect to the temperature dependent component can be suppressed, and the temperature characteristics of the high frequency composite component can be improved.

According to the second aspect of the invention, in particular, a heat shield pattern is provided between the heat shield layer and the high frequency circuit layer.
The heat generation from the high frequency circuit can be further suppressed.

According to the third aspect of the present invention, particularly, by exposing at least one end of the heat shield pattern to the outer surface of the laminated substrate, it is possible to improve the heat dissipation effect of the heat shield pattern.

According to a fourth aspect of the present invention, in particular, the heat shield pattern is connected to the mounting electrode provided on the lower surface of the laminated substrate via the connection electrode, so that the exposed surface of the heat shield pattern is arranged on the mounting surface side. Therefore, it is possible to suppress the interference of electromagnetic waves from the outside with respect to this part.

According to the fifth aspect of the present invention, particularly, by mounting the mounting electrode connected to the heat shield pattern to the ground, it is possible to further suppress the interference from the outside.

According to a sixth aspect of the present invention, in particular, the ground pattern is arranged below the high frequency circuit layer in the laminated substrate, and the heat shield pattern and the ground pattern are not connected in the laminated substrate. In addition, it is possible to suppress the interference from the outside and improve the heat radiation effect of the heat shield pattern.

According to the seventh aspect of the present invention, it is effective as a high-frequency composite component to enhance the heat radiation effect for the FET having a strong temperature dependency by making the temperature-dependent component a high-frequency circuit using the FET. It becomes a means.

According to an eighth aspect of the present invention, in particular, the temperature-dependent parts are high-frequency switch circuits using FETs to enhance the heat radiation effect for those parts which have particularly high temperature dependence in the high-frequency region. Is an effective means.

According to the ninth aspect of the present invention, in particular, the control current circuit pattern to be supplied to the FET is formed in the heat shield layer, so that the heat capacity of the heat shield layer is increased by the existence of the control current circuit pattern having no heat generation effect. Therefore, the effect of suppressing heat transfer to the temperature-dependent component can be enhanced.

According to a tenth aspect of the present invention, in particular, the heat shield layer is further provided with a dummy pattern independent of the circuit formed by the laminated substrate and the temperature-dependent component, thereby further increasing the heat capacity of the heat shield layer. Therefore, the effect of suppressing heat transfer to the temperature-dependent component can be enhanced.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view of a high frequency switch module 1 which constitutes a peripheral portion of an antenna in an RF circuit of a mobile phone, and its equivalent circuit is shown in FIG.

As shown in FIG. 2, the high frequency switch module 1 is provided on the high frequency switch circuit 5 for switching and connecting the transmitting circuit 3 and the receiving circuit 4 to the antenna 2, and on the transmitting circuit 3 side of the high frequency switch circuit 5. The high-frequency low-pass filter circuit 6 is combined.

As a concrete structure, a low-pass filter circuit 6 made of LC is formed by appropriately forming an electrode pattern 8 and a via hole 9 in an inner layer portion of a laminated substrate 7 formed of a dielectric material shown in FIG. A semiconductor chip 10 in which a plurality of gallium arsenide FETs forming the high frequency switch circuit 5 are integrally combined is mounted on the substrate 7.

The low-pass filter circuit 6 is formed as a high-frequency circuit layer 11 on the lower side of the laminated substrate 7, and the upper side of the low-pass filter circuit 6 is provided as a heat shield layer 12 at a predetermined interval.

This is because the semiconductor chip 10 mounted on the upper surface of the laminated substrate 7 employs a gallium arsenide FET as a main element, which belongs to a temperature-dependent component whose electric characteristics are affected by temperature changes. ing.

That is, in the laminated substrate 7 on which the semiconductor chip 10 is mounted, the low pass filter circuit 6 is formed in the inner layer portion thereof, and the PA is arranged in the latter stage of the low pass filter circuit 6 as shown in FIG. The amplified output signal from the PA is converted into heat with the insertion loss of the low-pass filter circuit 6, and the semiconductor chip 10 due to this heat generation.
It is possible to stabilize the temperature characteristics of the high frequency switch module 1 as a result by suppressing the heat conduction to the heat shield layer 12 and suppressing the temperature change of the semiconductor chip 10.

In the laminated substrate 7, the heat shield pattern 1 is provided between the heat shield layer 12 and the high frequency circuit layer 11.
By providing 3, the heat capacity of the upper layer portion of the high-frequency circuit layer 11 is increased, and the heat conduction can be further suppressed.

Further, by exposing a part of the heat shield pattern 13 to the outer surface of the laminated substrate 7, Au, Ag, Cu having a higher thermal conductivity than the dielectric material forming the laminated substrate 7 is formed.
Since heat is radiated to the outside of the laminated substrate 7 via the electrodes formed of a metal material such as
The temperature change of 0 can be further suppressed.

Further, the heat shielding pattern 13 is formed in the via hole 9
It is desirable to expose the lower surface of the laminated substrate 7 via the connection electrode 14 such as a. This is because a high-frequency circuit such as the low-pass filter circuit 6 formed in the laminated substrate 7 is very likely to interfere with a signal from the outside, and the heat shield pattern close to the high-frequency circuit layer 11 forming this high-frequency circuit. If 13 is provided on the upper surface or side surface of the laminated substrate 7 that is easily affected by peripheral components, the exposed portion acts as an antenna and causes high-frequency interference. If it is arranged on the lower surface, that is, the mounting surface, the exposed portion is covered with the mounting substrate (not shown) on which the laminated substrate 7 is mounted, so that it is less susceptible to external interference.

The mounting electrode 1 for connecting the heat shield pattern 13 exposed on the lower surface of the laminated substrate 7 to the mounting substrate.
If it is connected to 5a, in addition to the interference suppression effect described above,
In addition to the mounting electrodes 15 for input, output and ground which are usually provided in the high frequency switch module 1, the mounting electrodes 15a
Is newly provided, and the mounting strength of the high-frequency switch module 1 on the mounting substrate can be further increased.

Further, if the mounting electrode 15a for connecting the heat shield pattern 13 is used for grounding, the shielding property of the low pass filter circuit 6 which is a high frequency circuit can be further improved.

Further, in such a high frequency circuit, the ground pattern 16 is generally provided on the lower side of the high frequency circuit layer 11 in the laminated substrate 7, but the heat shield provided on the upper side of the high frequency circuit layer 11. When the pattern 13 is connected to the mounting electrode 15a for grounding provided on the mounting surface of the laminated substrate 7 via the via hole 9a, it is desirable that the pattern 13 is not connected to the ground pattern 16.

This is because the heat generated in the high frequency circuit layer 11 is
Circulation from the heat shielding pattern 13 to the high frequency circuit layer 11 via the via hole 9a and the earth pattern 16 is suppressed, and the earth pattern 16 and the heat shielding pattern 13 provided on the lower side of the high frequency circuit layer 11 are connected. The heat generated from the high-frequency circuit layer 11 can be efficiently dissipated to the outside of the laminated substrate 7 by disconnecting the via hole 9a.

Further, since the heat shielding pattern 13 can secure the shielding property between the high frequency circuit layer 11 and the heat shielding layer 12, the control extending from the control current circuit terminal 17 supplied to the FET shown in FIG. The current circuit pattern, that is, the choke coil 18 portion can be formed by an electrode pattern, and the high-frequency switch module 1 can be modularized, and the existence of the electrode pattern forming the choke coil 18 that does not generate heat causes thermal shielding. Since the heat capacity of the layer 12 is increased, the effect of suppressing heat transfer to the semiconductor chip 10 which is a temperature dependent component can be increased.

Further, by providing the dummy pattern 19 electrically independent from the other electrode patterns in the heat shield layer 12, the heat capacity of the heat shield layer 12 is further increased, and the heat transfer to the semiconductor chip 10 is performed. The suppressing effect can be enhanced.

In this embodiment, the high frequency switch module 1 for controlling the connection of a single transmission / reception system circuit has been described, but the high frequency switch for controlling the connection of a plurality of transmission / reception systems as shown in FIG. Module 1
The same effect can be obtained in.

Further, the present invention is not limited to the above-mentioned high frequency switch module 1, but a high frequency circuit is formed in the laminated substrate 7 and a heat-dependent component such as an FET is mounted on the laminated substrate 7. In that case, the same effect can be obtained.

[0033]

As described above, according to the present invention, the heat shielding layer is provided in the upper portion of the high frequency circuit layer and the temperature dependent component is arranged on the heat shielding layer, so that the heat generated from the high frequency circuit with respect to the temperature dependent component. Can be suppressed, and the temperature characteristics of the high frequency composite component can be improved.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a high frequency composite component according to an embodiment of the present invention.

FIG. 2 is an equivalent circuit diagram of the same high frequency composite component.

FIG. 3 is an equivalent circuit diagram of a high frequency composite component according to another embodiment of the present invention.

[Explanation of symbols]

1 High frequency switch module (high frequency composite parts) 6 Low pass filter (high frequency circuit) 7 Laminated board 9,9a Beer hole 10 Semiconductor chips (temperature-dependent parts) 11 High frequency circuit layer 12 Heat shield layer 13 Heat shield pattern 14 Connection electrode 15,15a Mounting electrode 18 Choke coil (control current circuit pattern) 19 dummy patterns

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hideaki Nakakubo             55-12 Osumihama, Kyotanabe City, Kyoto Prefecture Matsushita Nittoden             Ware corporation F-term (reference) 5K011 AA13 DA02 DA21 DA27 JA01                       KA13

Claims (10)

[Claims] 1. A laminated board for forming a high frequency circuit, and a temperature-dependent component electrically connected to the high frequency circuit and mounted on the laminated board, wherein the laminated board has the high frequency circuit in its inner layer portion. A high-frequency composite component, characterized in that a heat-shielding layer is provided on an upper portion of the high-frequency circuit layer forming the. 2. The high frequency composite component according to claim 1, wherein a heat shielding pattern is provided between the heat shielding layer and the high frequency circuit layer. 3. The high frequency composite component according to claim 2, wherein at least one end of the heat shielding pattern is exposed on the outer surface of the laminated substrate. 4. The high frequency composite component according to claim 3, wherein the heat shield pattern is connected to a mounting electrode provided on the lower surface of the laminated substrate via a connection electrode. 5. The high frequency composite component according to claim 4, wherein the mounting electrode connected to the heat shield pattern is connected to the ground. 6. The laminate according to claim 5, wherein a ground pattern is arranged below the high-frequency circuit layer in the laminated board, and the heat shield pattern and the earth pattern are not connected in the laminated board. High frequency composite parts. 7. The high frequency composite component according to claim 1, wherein the temperature dependent component is a high frequency circuit using an FET. 8. The high frequency composite component according to claim 7, wherein the temperature dependent component is a high frequency switch circuit using an FET. 9. The high frequency composite component according to claim 8, wherein a control current circuit pattern for supplying to the FET is formed on the heat shield layer. 10. The high frequency composite component according to claim 9, wherein the heat shield layer is provided with a dummy pattern independent of a circuit formed by the laminated substrate and the temperature dependent component.