JP2004200457A - High-frequency composite component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency composite component, having high performances by solving the problem, wherein when a high-frequency component is mounted on a circuit board, high-frequency circuits, respectively, formed in the high-frequency component and the circuit board interfere with each other through an upper layer of the circuit board, to cause electrical characteristics of the high-frequency composite component to deteriorate. <P>SOLUTION: In the high-frequency composite component, wherein the high-frequency component 2 is mounted on a circuit board 1, a dielectric constant of dielectric layers 1a located between the upper surface of the circuit board 1 and a circuit electrode 3 closest to the upper surface is allowed to be lower than that of the material forming the high-frequency component 2. Thus, interference between the circuit electrode 3 and the high-frequency component 2 can be inhibited, which, as a result, permits the high-frequency composite component to have high performances. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a high-frequency composite component used for a high-frequency device such as a mobile phone.
[0002]
[Prior art]
In general, as a high-frequency composite component used for an RF component of a mobile phone or the like, a form in which the high-frequency component is mounted on a circuit board having a high-frequency circuit built therein is known.
[0003]
Conventionally, a circuit board that forms such a high-frequency composite component forms a predetermined high-frequency circuit by using a plurality of circuit electrodes on an inner layer component of a laminated body made of a dielectric, and is difficult to form in this circuit board. The remaining high-frequency circuit was supplemented by high-frequency components mounted on a circuit board.
[0004]
As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
[0005]
[Patent Document 1]
JP 2001-230698 A
[Problems to be solved by the invention]
However, the place where the high-frequency component is mounted on the circuit board, the high-frequency circuit formed inside the high-frequency component and the high-frequency circuit formed in the circuit board interfere with each other via the upper layer of the circuit board. The electrical characteristics of the high-frequency composite parts were degraded.
[0007]
Therefore, the present invention is to solve such a problem and to provide a high-performance high-frequency composite component.
[0008]
[Means for Solving the Problems]
In order to solve this problem, the invention described in claim 1 of the present invention is particularly directed to a high-frequency composite component in which a high-frequency component is mounted on a circuit board, a position between an upper surface of the circuit board and a circuit electrode closest to the upper surface. By setting the dielectric constant of the dielectric layer to be lower than that of the material forming the high-frequency component, interference between the circuit electrodes and the high-frequency component can be suppressed, resulting in a high-performance composite component Can be done.
[0009]
The invention according to claim 2 is that, in particular, the high-frequency component is formed of a semiconductor, the high-frequency component is mounted on a circuit board by flip-chip mounting, and the inductor component required for the high-frequency component is formed of the connection electrode. The shortage of the inductor component of the high-frequency component due to the flip chip mounting can be easily compensated.
[0010]
According to the third aspect of the present invention, the heat radiation efficiency of the high-frequency component can be improved by performing the heat radiation of the high-frequency component using the connection electrode to which the high-frequency component is connected.
[0011]
According to the fourth aspect of the invention, the heat radiation effect can be more effectively utilized especially when the high-frequency component is an FET.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[0013]
FIG. 1 shows a high-frequency composite component in which a high-frequency component 2 is mounted on an upper surface of a circuit board 1 made of a dielectric material. The circuit board 1 has a plurality of circuit electrodes 3 appropriately disposed in an inner layer portion thereof and via a via hole 4 or the like. A high-frequency circuit such as a high-frequency low-pass filter is formed by the connection, and the high-frequency component 2 is formed with a high-frequency switch formed of a semiconductor chip such as an FET.
[0014]
In this high-frequency composite component, as shown in FIG. 2, the dielectric constant of the dielectric layer 1a located between the upper surface of the circuit board 1 and the circuit electrode 3a closest to the upper surface is determined by the semiconductor as the high-frequency component 2. The dielectric constant of the material of the chip is set to be lower than that of the material of the chip, and the dielectric layer having the low dielectric constant is interposed between the high-frequency component 2 and the circuit electrodes 3 and 3a forming the high-frequency low-pass filter. Interference can be suppressed, and deterioration of the electrical characteristics due to the interference can be suppressed.
[0015]
Further, in this high-frequency composite component, the high-frequency component 2 is flip-chip mounted on the circuit board 1, and the inductor component conventionally obtained by the bonding wire is in an insufficient state. This missing inductor component is compensated for by using the inductor component of the connection electrode 5 that mounts the high-frequency component 2 provided on the upper surface of the circuit board 1 and connects to the predetermined circuit electrode 3 provided on the inner layer of the circuit board 1. I have.
[0016]
That is, since the connection electrode 5 is disposed on the dielectric layer having a low dielectric constant, the connection electrode 5 is not easily affected by the ground electrode provided on the inner layer portion of the circuit board 1 and the impedance is high. It is easy to secure a sufficient inductor component with a short line length, and it is possible to easily compensate for the above-mentioned inductor component and contribute to downsizing of the high-frequency composite component.
[0017]
Furthermore, when comparing the high-frequency component 2 with the flip chip mounted and the one connected with the bonding wire, the connection electrode 5 is directly connected to the flip-chip mounted semiconductor chip, while the bonding wire is connected to the other. Will be done. In this regard, while the bonding wire is formed of a metal in a linear shape, the connection electrode 5 is generally formed in a planar pattern based on a high conductivity material such as copper or silver. Therefore, a higher heat radiation effect can be obtained.
[0018]
If the high-frequency component 2 uses an FET that is easily affected by heat, as in the high-frequency composite component, the effect of the high-frequency component 2 will be more remarkable.
[0019]
【The invention's effect】
As described above, according to the present invention, particularly in a high-frequency composite component in which a high-frequency component is mounted on a circuit board, the dielectric constant of a dielectric layer located between the upper surface of the circuit board and the circuit electrode closest to the upper surface Is set lower than the dielectric constant of the material forming the outer surface of the high-frequency component, interference between the circuit electrode and the high-frequency component can be suppressed, and as a result, the high-frequency composite component can have high performance. .
[Brief description of the drawings]
FIG. 1 is an exploded perspective view of a high-frequency composite component according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the high-frequency composite component.
DESCRIPTION OF SYMBOLS 1 Circuit board 1a Dielectric layer 2 High frequency component 3, 3a Circuit electrode 4 Via hole 5 Connection electrode

Claims (4)

A circuit board composed of a plurality of dielectric layers, a circuit electrode arranged on an inner layer portion of the circuit board to form a predetermined high-frequency circuit, and a connection electrode arranged on an upper surface of the circuit board and connected to the circuit electrode And a high-frequency component mounted on the upper surface of the circuit board and connected to the connection electrode, wherein the dielectric layer positioned between the upper surface of the circuit board and the circuit electrode closest to the upper surface. A high-frequency composite component having a dielectric constant set to be lower than a dielectric constant of a material forming an outer surface of the high-frequency component. The high-frequency composite component according to claim 1, wherein the high-frequency component is formed of a semiconductor, the high-frequency component is mounted on a circuit board by flip-chip mounting, and an inductor component required for the high-frequency component is formed of a connection electrode. The high-frequency composite component according to claim 2, wherein the high-frequency component is radiated using connection electrodes to which the high-frequency component is connected. The high-frequency composite component according to claim 3, wherein the high-frequency component is an FET.

Images