JP2003243467A5 - - Google Patents

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Publication number
JP2003243467A5
JP2003243467A5 JP2002040506A JP2002040506A JP2003243467A5 JP 2003243467 A5 JP2003243467 A5 JP 2003243467A5 JP 2002040506 A JP2002040506 A JP 2002040506A JP 2002040506 A JP2002040506 A JP 2002040506A JP 2003243467 A5 JP2003243467 A5 JP 2003243467A5
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JP
Japan
Prior art keywords
layer
light
film thickness
measured
polarized component
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Application number
JP2002040506A
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English (en)
Japanese (ja)
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JP2003243467A (ja
JP3878027B2 (ja
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Priority claimed from JP2002040506A external-priority patent/JP3878027B2/ja
Priority to JP2002040506A priority Critical patent/JP3878027B2/ja
Application filed filed Critical
Priority to PCT/JP2003/001370 priority patent/WO2003069667A1/ja
Priority to AU2003207200A priority patent/AU2003207200A1/en
Priority to CNB038036142A priority patent/CN100521135C/zh
Publication of JP2003243467A publication Critical patent/JP2003243467A/ja
Priority to US10/909,458 priority patent/US6950186B2/en
Publication of JP2003243467A5 publication Critical patent/JP2003243467A5/ja
Publication of JP3878027B2 publication Critical patent/JP3878027B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002040506A 2002-02-18 2002-02-18 偏光解析方法及び光学的膜厚測定装置 Expired - Fee Related JP3878027B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002040506A JP3878027B2 (ja) 2002-02-18 2002-02-18 偏光解析方法及び光学的膜厚測定装置
PCT/JP2003/001370 WO2003069667A1 (fr) 2002-02-18 2003-02-10 Procede d'analyse de polarisation
AU2003207200A AU2003207200A1 (en) 2002-02-18 2003-02-10 Polarization analyzing method
CNB038036142A CN100521135C (zh) 2002-02-18 2003-02-10 偏振分析方法
US10/909,458 US6950186B2 (en) 2002-02-18 2004-08-03 Polarization analyzing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002040506A JP3878027B2 (ja) 2002-02-18 2002-02-18 偏光解析方法及び光学的膜厚測定装置

Publications (3)

Publication Number Publication Date
JP2003243467A JP2003243467A (ja) 2003-08-29
JP2003243467A5 true JP2003243467A5 (cg-RX-API-DMAC7.html) 2005-08-25
JP3878027B2 JP3878027B2 (ja) 2007-02-07

Family

ID=27678309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002040506A Expired - Fee Related JP3878027B2 (ja) 2002-02-18 2002-02-18 偏光解析方法及び光学的膜厚測定装置

Country Status (5)

Country Link
US (1) US6950186B2 (cg-RX-API-DMAC7.html)
JP (1) JP3878027B2 (cg-RX-API-DMAC7.html)
CN (1) CN100521135C (cg-RX-API-DMAC7.html)
AU (1) AU2003207200A1 (cg-RX-API-DMAC7.html)
WO (1) WO2003069667A1 (cg-RX-API-DMAC7.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10319843A1 (de) 2003-05-03 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Tiefe einer vergrabenen Struktur
TWI460418B (zh) 2005-11-29 2014-11-11 Horiba Ltd 有機電致發光元件之製造方法及製造裝置
JP4317558B2 (ja) * 2006-08-23 2009-08-19 株式会社堀場製作所 試料解析方法、試料解析装置及びプログラム
US20070178611A1 (en) * 2006-01-30 2007-08-02 Shoaib Zaidi Semiconductor wafer having measurement area feature for determining dielectric layer thickness
JP5264374B2 (ja) * 2008-09-02 2013-08-14 東京エレクトロン株式会社 パターン形状検査方法及び半導体装置の製造方法
JP5471367B2 (ja) * 2009-11-30 2014-04-16 株式会社島津製作所 膜厚測定方法及び膜厚測定装置
JP5857714B2 (ja) * 2011-12-16 2016-02-10 富士通セミコンダクター株式会社 パターン測定方法及び半導体装置の製造方法
CN102553787A (zh) * 2011-12-23 2012-07-11 广东工业大学 一种涂浆机上浆量检测装置及方法
FR2998047B1 (fr) * 2012-11-12 2015-10-02 Soitec Silicon On Insulator Procede de mesure des variations d'epaisseur d'une couche d'une structure semi-conductrice multicouche
CN103968949B (zh) * 2013-02-04 2016-04-27 清华大学 偏振光检测系统
CN103968948B (zh) * 2013-02-04 2016-04-27 清华大学 偏振光的检测方法
CN103674892B (zh) * 2013-11-21 2015-09-30 中国科学院上海技术物理研究所 一种基于全内反射偏振位相差测量来监控薄膜生长的方法
US11085754B2 (en) * 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
US11852457B2 (en) * 2021-12-20 2023-12-26 GM Global Technology Operations LLC Contactless method for polymer coating thickness measurement
CN115284162B (zh) * 2022-07-19 2024-03-19 华虹半导体(无锡)有限公司 介质层的物理性能、半导体芯片性能的监测方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3781245B2 (ja) * 1997-12-26 2006-05-31 富士通株式会社 半導体装置の製造方法
US6483580B1 (en) * 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
IT1306911B1 (it) * 1998-06-30 2001-10-11 Stmicroelettronica Srl Metodo per misurare lo spessore di uno strato di silicio danneggiatoda attacchi con plasma

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