JP2003229623A5 - - Google Patents

Download PDF

Info

Publication number
JP2003229623A5
JP2003229623A5 JP2002027985A JP2002027985A JP2003229623A5 JP 2003229623 A5 JP2003229623 A5 JP 2003229623A5 JP 2002027985 A JP2002027985 A JP 2002027985A JP 2002027985 A JP2002027985 A JP 2002027985A JP 2003229623 A5 JP2003229623 A5 JP 2003229623A5
Authority
JP
Japan
Prior art keywords
crystal substrate
semiconductor crystal
nitride
region
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002027985A
Other languages
English (en)
Japanese (ja)
Other versions
JP4072352B2 (ja
JP2003229623A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002027985A priority Critical patent/JP4072352B2/ja
Priority claimed from JP2002027985A external-priority patent/JP4072352B2/ja
Publication of JP2003229623A publication Critical patent/JP2003229623A/ja
Publication of JP2003229623A5 publication Critical patent/JP2003229623A5/ja
Application granted granted Critical
Publication of JP4072352B2 publication Critical patent/JP4072352B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002027985A 2002-02-05 2002-02-05 窒化物系化合物半導体素子及びその作製方法 Expired - Fee Related JP4072352B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002027985A JP4072352B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体素子及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002027985A JP4072352B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体素子及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007323096A Division JP4786634B2 (ja) 2007-12-14 2007-12-14 窒化物系化合物半導体素子及びその作製方法

Publications (3)

Publication Number Publication Date
JP2003229623A JP2003229623A (ja) 2003-08-15
JP2003229623A5 true JP2003229623A5 (cg-RX-API-DMAC7.html) 2005-08-18
JP4072352B2 JP4072352B2 (ja) 2008-04-09

Family

ID=27749343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002027985A Expired - Fee Related JP4072352B2 (ja) 2002-02-05 2002-02-05 窒化物系化合物半導体素子及びその作製方法

Country Status (1)

Country Link
JP (1) JP4072352B2 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916584B2 (ja) 2003-04-24 2007-05-16 シャープ株式会社 窒化物半導体レーザ装置
US8089093B2 (en) 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
JP5217077B2 (ja) * 2004-02-20 2013-06-19 日亜化学工業株式会社 窒化物半導体素子及び窒化物半導体基板の製造方法、並びに窒化物半導体素子の製造方法
KR101910556B1 (ko) 2012-03-20 2018-10-22 서울반도체 주식회사 질화갈륨 기판을 갖는 발광 다이오드
US20230203704A1 (en) * 2020-04-14 2023-06-29 Kwansei Gakuin Educational Foundation Method for producing semiconductor substrate, semiconductor substrate, and method for preventing crack occurrence in growth layer
EP4137615A4 (en) * 2020-04-14 2024-05-29 Kwansei Gakuin Educational Foundation METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING LAYER OBTAINED BY GROWTH
TWI885113B (zh) * 2020-04-14 2025-06-01 學校法人關西學院 氮化鋁基板的製造方法、氮化鋁基板以及氮化鋁層的形成方法
US20230197486A1 (en) * 2020-04-14 2023-06-22 Kwansei Gakuin Educational Foundation Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing occurrence of cracks in aluminum nitride layer

Similar Documents

Publication Publication Date Title
US7544971B2 (en) Lateral current blocking light-emitting diode and method for manufacturing the same
KR101622308B1 (ko) 발광소자 및 그 제조방법
DE10045149A1 (de) Licht emittierende Diode und Verfahren zu deren Herstellung
KR960036120A (ko) 절연게이트형 반도체장치 및 그 제조방법
US8053830B2 (en) Semiconductor device
JP2004039924A5 (cg-RX-API-DMAC7.html)
JP2003229638A5 (cg-RX-API-DMAC7.html)
CN110121782A (zh) 显示装置及其制造方法
JP2003229623A5 (cg-RX-API-DMAC7.html)
KR20120115775A (ko) 발광 다이오드 및 그의 제조 방법
CN102856481A (zh) 半导体发光器件封装件
JP6204131B2 (ja) 発光素子及びその製造方法
WO2020035419A1 (de) Optoelektronisches halbleiterbauelement mit kontaktelementen und dessen herstellungsverfahren
EP2299481A3 (en) Semiconductor power device with multiple drain structure and corresponding manufacturing process
KR101984698B1 (ko) 기판 구조체, 이로부터 제조된 반도체소자 및 그 제조방법
KR101869045B1 (ko) 고전자이동도 트랜지스터 및 그 제조방법
KR101171356B1 (ko) 다수의 셀이 결합된 발광 소자 및 이의 제조 방법
KR100865114B1 (ko) 수직형 발광소자 및 그 제조방법
TWI667811B (zh) 半導體裝置及其製造方法
KR102122366B1 (ko) 질화물 반도체 박막 제조방법 및 이를 이용한 질화물 반도체 소자 제조방법
WO2020035413A1 (de) Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst
JP2020194911A (ja) 半導体装置
US20200035864A1 (en) Light emitting device
EP1447848A3 (en) Semi conductor integrated circuit including anti-fuse and method for manufacturing the same
JPH0658894B2 (ja) 高抵抗及び低抵抗領域を有するＩｎＰを含む半導体デバイスの製作