JP2003229577A5 - - Google Patents

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Publication number
JP2003229577A5
JP2003229577A5 JP2002028978A JP2002028978A JP2003229577A5 JP 2003229577 A5 JP2003229577 A5 JP 2003229577A5 JP 2002028978 A JP2002028978 A JP 2002028978A JP 2002028978 A JP2002028978 A JP 2002028978A JP 2003229577 A5 JP2003229577 A5 JP 2003229577A5
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JP
Japan
Prior art keywords
oxide film
manufacturing
region
etching
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002028978A
Other languages
English (en)
Japanese (ja)
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JP2003229577A (ja
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Publication date
Application filed filed Critical
Priority to JP2002028978A priority Critical patent/JP2003229577A/ja
Priority claimed from JP2002028978A external-priority patent/JP2003229577A/ja
Publication of JP2003229577A publication Critical patent/JP2003229577A/ja
Publication of JP2003229577A5 publication Critical patent/JP2003229577A5/ja
Pending legal-status Critical Current

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JP2002028978A 2002-02-06 2002-02-06 半導体装置の製造方法。 Pending JP2003229577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002028978A JP2003229577A (ja) 2002-02-06 2002-02-06 半導体装置の製造方法。

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002028978A JP2003229577A (ja) 2002-02-06 2002-02-06 半導体装置の製造方法。

Publications (2)

Publication Number Publication Date
JP2003229577A JP2003229577A (ja) 2003-08-15
JP2003229577A5 true JP2003229577A5 (cg-RX-API-DMAC7.html) 2005-07-14

Family

ID=27749963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002028978A Pending JP2003229577A (ja) 2002-02-06 2002-02-06 半導体装置の製造方法。

Country Status (1)

Country Link
JP (1) JP2003229577A (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911379B2 (en) 2003-03-05 2005-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming strained silicon on insulator substrate
US6949451B2 (en) 2003-03-10 2005-09-27 Taiwan Semiconductor Manufacturing Company, Ltd. SOI chip with recess-resistant buried insulator and method of manufacturing the same
US6902962B2 (en) 2003-04-04 2005-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-on-insulator chip with multiple crystal orientations
KR100674987B1 (ko) 2005-08-09 2007-01-29 삼성전자주식회사 벌크 웨이퍼 기판에 형성된 트랜지스터의 구동 방법
US7550355B2 (en) 2005-08-29 2009-06-23 Toshiba America Electronic Components, Inc. Low-leakage transistor and manufacturing method thereof

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