JP2003229548A - 乗物、表示装置、および半導体装置の作製方法 - Google Patents
乗物、表示装置、および半導体装置の作製方法Info
- Publication number
- JP2003229548A JP2003229548A JP2002348184A JP2002348184A JP2003229548A JP 2003229548 A JP2003229548 A JP 2003229548A JP 2002348184 A JP2002348184 A JP 2002348184A JP 2002348184 A JP2002348184 A JP 2002348184A JP 2003229548 A JP2003229548 A JP 2003229548A
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- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
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- 229910052786 argon Inorganic materials 0.000 description 2
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- 238000010583 slow cooling Methods 0.000 description 2
- 102100032566 Carbonic anhydrase-related protein 10 Human genes 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 101000867836 Homo sapiens Carbonic anhydrase-related protein 10 Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
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- 229910007541 Zn O Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 239000000969 carrier Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002348184A JP2003229548A (ja) | 2001-11-30 | 2002-11-29 | 乗物、表示装置、および半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-367412 | 2001-11-30 | ||
| JP2001367412 | 2001-11-30 | ||
| JP2002348184A JP2003229548A (ja) | 2001-11-30 | 2002-11-29 | 乗物、表示装置、および半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010246196A Division JP5020370B2 (ja) | 2001-11-30 | 2010-11-02 | 発光装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003229548A true JP2003229548A (ja) | 2003-08-15 |
| JP2003229548A5 JP2003229548A5 (enrdf_load_stackoverflow) | 2006-01-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002348184A Withdrawn JP2003229548A (ja) | 2001-11-30 | 2002-11-29 | 乗物、表示装置、および半導体装置の作製方法 |
Country Status (1)
| Country | Link |
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| JP (1) | JP2003229548A (enrdf_load_stackoverflow) |
Cited By (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005159333A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2005183374A (ja) * | 2003-11-28 | 2005-07-07 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| JP2005235191A (ja) * | 2004-01-23 | 2005-09-02 | Semiconductor Energy Lab Co Ltd | Ｉｄラベル、ｉｄカード及びｉｄタグ |
| JP2005311342A (ja) * | 2004-03-25 | 2005-11-04 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2006049800A (ja) | 2004-03-10 | 2006-02-16 | Seiko Epson Corp | 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器 |
| JP2006049851A (ja) * | 2004-06-29 | 2006-02-16 | Semiconductor Energy Lab Co Ltd | 薄膜集積回路の作製方法、及び素子基板 |
| JP2007036216A (ja) | 2005-06-24 | 2007-02-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び無線通信システム |
| JP2007512568A (ja) * | 2003-11-21 | 2007-05-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | プラスチック基板を有するアクティブマトリクスディスプレイ及び他の電子装置 |
| JP2008532207A (ja) * | 2005-12-06 | 2008-08-14 | コーニング インコーポレイテッド | ガラス外囲器を製造する方法 |
| WO2009107171A1 (ja) * | 2008-02-28 | 2009-09-03 | シャープ株式会社 | 薄膜積層デバイスの製造方法及び表示装置の製造方法、並びに、薄膜積層デバイス |
| JP2010062526A (ja) * | 2008-09-02 | 2010-03-18 | Samsung Electro-Mechanics Co Ltd | 薄膜素子の製造方法 |
| JP2010062527A (ja) * | 2008-09-02 | 2010-03-18 | Samsung Electro-Mechanics Co Ltd | 薄膜素子の製造方法 |
| JP2010256594A (ja) * | 2009-04-24 | 2010-11-11 | Seiko Epson Corp | 電気光学装置、その製造方法、および電子機器 |
| US8136735B2 (en) | 2004-01-23 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | ID label, ID card, and ID tag |
| KR101142924B1 (ko) * | 2003-10-28 | 2012-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| KR101153470B1 (ko) | 2004-06-29 | 2012-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 집적회로 제작방법 및 소자 기판 |
| JP2013069769A (ja) * | 2011-09-21 | 2013-04-18 | Ulvac Japan Ltd | Ｔｆｔ基板の製造方法およびレーザーアニール装置 |
| JP2013131760A (ja) * | 2011-12-20 | 2013-07-04 | Commissariat A L'energie Atomique & Aux Energies Alternatives | 可撓性構造体の製造方法、中間構造体及び可撓性構造体 |
| JP2013134808A (ja) * | 2011-12-23 | 2013-07-08 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| JP2015201649A (ja) * | 2004-06-04 | 2015-11-12 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 印刷可能半導体素子を製造して組み立てるための方法及びデバイス |
| JP2016012429A (ja) * | 2014-06-27 | 2016-01-21 | 富士フイルム株式会社 | 封止部材および電子デバイスの製造方法 |
| JP2016192524A (ja) * | 2015-03-31 | 2016-11-10 | 富士フイルム株式会社 | 有機半導体素子の製造方法 |
| WO2017115484A1 (ja) * | 2015-12-28 | 2017-07-06 | 鴻海精密工業股▲ふん▼有限公司 | 有機ｅｌ表示装置の製造方法 |
| JP2017199002A (ja) * | 2012-09-03 | 2017-11-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
| WO2017195067A1 (ja) * | 2016-05-10 | 2017-11-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP2018029084A (ja) * | 2012-07-05 | 2018-02-22 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US9917282B2 (en) | 2015-07-30 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device, light-emitting device, module, and electronic device |
| JP2018128680A (ja) * | 2001-11-30 | 2018-08-16 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US10204864B2 (en) | 2004-06-04 | 2019-02-12 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
| JP2019062067A (ja) * | 2017-09-26 | 2019-04-18 | 株式会社Ｓｃｒｅｅｎホールディングス | 有機半導体の製造方法および光照射装置 |
| WO2019239982A1 (ja) * | 2018-06-15 | 2019-12-19 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP2020080320A (ja) * | 2008-10-16 | 2020-05-28 | 株式会社半導体エネルギー研究所 | Ｅｌモジュール、発光装置及びフレキシブル発光装置 |
| JP2021119575A (ja) * | 2020-06-29 | 2021-08-12 | 株式会社半導体エネルギー研究所 | 発光装置を有する自動車の内装、および発光装置を有する自動車の外装 |
| US11380218B2 (en) | 2017-03-03 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US11637267B2 (en) | 2009-05-21 | 2023-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
| KR20240007915A (ko) | 2021-05-13 | 2024-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 |
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| JPH0365925A (ja) * | 1989-08-04 | 1991-03-20 | Ricoh Co Ltd | 曲面液晶表示装置 |
| JPH06504139A (ja) * | 1990-12-31 | 1994-05-12 | コピン・コーポレーシヨン | 表示パネル用の単結晶シリコン配列素子 |
| JPH06214220A (ja) * | 1993-01-20 | 1994-08-05 | Toshiba Corp | 液晶表示装置 |
| JPH08288522A (ja) * | 1995-02-16 | 1996-11-01 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPH1020293A (ja) * | 1996-07-03 | 1998-01-23 | Omron Corp | 表示装置 |
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