JP2003226596A - 単結晶シリコンインゴットの形成方法 - Google Patents

単結晶シリコンインゴットの形成方法

Info

Publication number
JP2003226596A
JP2003226596A JP2002368524A JP2002368524A JP2003226596A JP 2003226596 A JP2003226596 A JP 2003226596A JP 2002368524 A JP2002368524 A JP 2002368524A JP 2002368524 A JP2002368524 A JP 2002368524A JP 2003226596 A JP2003226596 A JP 2003226596A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
crucible
single crystal
rod
pieces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002368524A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003226596A5 (https=
Inventor
Arvid Neil Arvidson
アーヴィッド・ニール・アーヴィッドソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hemlock Semiconductor Operations LLC
Original Assignee
Hemlock Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hemlock Semiconductor Corp filed Critical Hemlock Semiconductor Corp
Publication of JP2003226596A publication Critical patent/JP2003226596A/ja
Publication of JP2003226596A5 publication Critical patent/JP2003226596A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2002368524A 2002-01-11 2002-12-19 単結晶シリコンインゴットの形成方法 Pending JP2003226596A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/042684 2002-01-11
US10/042,684 US6605149B2 (en) 2002-01-11 2002-01-11 Method of stacking polycrystalline silicon in process for single crystal production

Publications (2)

Publication Number Publication Date
JP2003226596A true JP2003226596A (ja) 2003-08-12
JP2003226596A5 JP2003226596A5 (https=) 2006-02-16

Family

ID=21923222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002368524A Pending JP2003226596A (ja) 2002-01-11 2002-12-19 単結晶シリコンインゴットの形成方法

Country Status (2)

Country Link
US (1) US6605149B2 (https=)
JP (1) JP2003226596A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007112651A (ja) * 2005-10-19 2007-05-10 Toshiba Ceramics Co Ltd シリコン単結晶原料の溶解方法
JP2010042968A (ja) * 2008-08-18 2010-02-25 Sumco Corp シリコン単結晶の製造方法
JP2012140285A (ja) * 2010-12-28 2012-07-26 Siltronic Japan Corp シリコン単結晶インゴットの製造方法
JP2014514238A (ja) * 2011-04-14 2014-06-19 アールイーシー シリコン インコーポレイテッド 多結晶シリコンシステム
JP2015157754A (ja) * 2015-04-15 2015-09-03 住友化学株式会社 サファイア単結晶製造用αアルミナ焼結体
JP2016130200A (ja) * 2015-01-14 2016-07-21 株式会社Sumco シリコン単結晶の製造方法
KR102781512B1 (ko) * 2023-11-01 2025-03-12 한국세라믹기술원 블록 형태의 펠릿을 이용한 단결정 성장 방법 및 이를 위한 단결정 성장용 펠릿

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004033388A1 (en) * 2002-10-10 2004-04-22 Hrd Corp An additive to render gypsum board moisture resistant
EP1577954A1 (de) * 2004-03-09 2005-09-21 RWE SCHOTT Solar GmbH Verfahren zur Förderung von Feststoffpartikeln
US7141114B2 (en) 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
NO324710B1 (no) * 2004-12-29 2007-12-03 Elkem Solar As Fremgangsmate for fylling av digel med silisium av solcellekvalitet
US8603292B2 (en) * 2009-10-28 2013-12-10 Lam Research Corporation Quartz window for a degas chamber
WO2014037965A1 (en) * 2012-09-05 2014-03-13 MEMC ELECTRONIC METERIALS S.p.A. Method of loading a charge of polysilicon into a crucible
CN108004589A (zh) * 2018-01-12 2018-05-08 无锡惠郡科技有限公司 一种八边形多晶硅铸锭的制造方法及其制造设备
CN113026088A (zh) * 2019-12-24 2021-06-25 苏州阿特斯阳光电力科技有限公司 晶体硅锭的制备方法
CN115070973A (zh) * 2022-07-11 2022-09-20 济南科盛电子有限公司 一种单晶硅片的生产工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450191A (ja) * 1990-06-20 1992-02-19 Kawasaki Steel Corp 単結晶用原料の装入方法
JPH05740U (ja) * 1991-06-26 1993-01-08 川崎炉材株式会社 高炉炉底用大型煉瓦とその積み構造
JPH05270969A (ja) * 1992-03-24 1993-10-19 Sumitomo Metal Ind Ltd 結晶成長方法
JPH09315893A (ja) * 1996-05-30 1997-12-09 Nikon Corp フッ化カルシウム結晶の製造方法
JPH11100298A (ja) * 1997-09-29 1999-04-13 Sumitomo Sitix Corp シリコン単結晶原料の溶解方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4073666A (en) * 1976-09-09 1978-02-14 Airco, Inc. Method for making an insulated superconductor and article produced thereby
US4955357A (en) * 1988-01-22 1990-09-11 Hi-Silicon Co., Ltd. Method and apparatus for cutting polycrystalline silicon rods
JP3018424B2 (ja) * 1990-07-30 2000-03-13 株式会社デンソー 内燃機関用コイルの中心鉄心の製造方法
US5588993A (en) 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5919303A (en) 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
US6284040B1 (en) * 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0450191A (ja) * 1990-06-20 1992-02-19 Kawasaki Steel Corp 単結晶用原料の装入方法
JPH05740U (ja) * 1991-06-26 1993-01-08 川崎炉材株式会社 高炉炉底用大型煉瓦とその積み構造
JPH05270969A (ja) * 1992-03-24 1993-10-19 Sumitomo Metal Ind Ltd 結晶成長方法
JPH09315893A (ja) * 1996-05-30 1997-12-09 Nikon Corp フッ化カルシウム結晶の製造方法
JPH11100298A (ja) * 1997-09-29 1999-04-13 Sumitomo Sitix Corp シリコン単結晶原料の溶解方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007112651A (ja) * 2005-10-19 2007-05-10 Toshiba Ceramics Co Ltd シリコン単結晶原料の溶解方法
JP2010042968A (ja) * 2008-08-18 2010-02-25 Sumco Corp シリコン単結晶の製造方法
JP2012140285A (ja) * 2010-12-28 2012-07-26 Siltronic Japan Corp シリコン単結晶インゴットの製造方法
JP2014514238A (ja) * 2011-04-14 2014-06-19 アールイーシー シリコン インコーポレイテッド 多結晶シリコンシステム
JP2016130200A (ja) * 2015-01-14 2016-07-21 株式会社Sumco シリコン単結晶の製造方法
KR20160087741A (ko) * 2015-01-14 2016-07-22 가부시키가이샤 사무코 실리콘 단결정의 제조 방법
KR101727071B1 (ko) 2015-01-14 2017-04-14 가부시키가이샤 사무코 실리콘 단결정의 제조 방법
JP2015157754A (ja) * 2015-04-15 2015-09-03 住友化学株式会社 サファイア単結晶製造用αアルミナ焼結体
KR102781512B1 (ko) * 2023-11-01 2025-03-12 한국세라믹기술원 블록 형태의 펠릿을 이용한 단결정 성장 방법 및 이를 위한 단결정 성장용 펠릿

Also Published As

Publication number Publication date
US20030131783A1 (en) 2003-07-17
US6605149B2 (en) 2003-08-12

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