JP2003220364A - Precise sieve plate and classifier using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a precise sieve plate capable of classifying fine particles accurately (in a narrow particle size distribution) and efficiently and having sufficient mechanical strength. <P>SOLUTION: First, a special photosensitive resin is used to form a photosensitive resin layer with a thickness of 10-500 μm on a conductive substrate plate 7 and, next, the photosensitive resin layer 11 is patterned by photolithography. By this method, columnar bodies 12 comprising the cured matter of the photosensitive resin are formed on the conductive substrate plate 7 in arrangement allowed to correspond to sieve perforations. Next, a metal layer 13 is grown on the conductive substrate plate 7 by an electrolytic plating method. Subsequently, the columnar bodies 12 and the conductive substrate plate 7 are removed. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a precision sieving plate capable of accurately classifying fine particles, that is, with a narrow particle size distribution and efficiently, and obtaining fine particles which are difficult to aggregate after classification. Manufacturing method.

[0002]

2. Description of the Related Art Conventionally, a conductive adhesive sheet which gives conductivity only in the thickness direction at the time of connecting the wiring of a liquid crystal display to a flexible substrate or mounting high density of integrated circuit parts on a substrate has been known. It is used. This conductive adhesive sheet is composed of an adhesive layer and conductive fine particles dispersed and arranged in the surface of the adhesive layer. In such a conductive adhesive sheet, as the connection pattern becomes finer, it is possible to use fine conductive particles having a small size (particle diameter of about 10 μm) and a uniform size (narrow particle size distribution). It has been demanded.

As a method for obtaining fine conductive particles having a uniform size, plastic particles are prepared by a suspension polymerization method or an emulsion polymerization method, the plastic particles are classified by a sedimentation method, and then the surface thereof is left free. A method of forming a metal film of nickel, gold or the like by electrolytic plating or the like is known. However, this method requires a long time for classification because the plastic particles are classified by the sedimentation method, needs to remove the liquid adhering to the surface, and the classifiable particles have a large liquid density and a large density used in the classification treatment. There were problems such as being restricted to things that were not different.

On the other hand, a method of classifying particles by sieving has existed for a long time, and as shown in FIG. 13, a wire 50 made of metal or plastic fiber is formed with a sieving hole (opening) 10 of a predetermined size. A mesh knitted sieve has been used. However, such a conventional sieve has a diameter of the wire rod 50 of several tens from the viewpoint of mechanical strength.
It must be at least μm. Even if the size of the sieving hole 10 is reduced, the limit is about several tens of μm. If the sieving hole 10 is a square having a side of 10 μm and the wire 50 used has a diameter of, for example, 20 μm, the area ratio of the sieving hole 10 to the entire surface of the sieving is about 1.
Since it is 0% (reference numeral 25 in FIG. 13 indicates a unit area for calculating the aperture ratio of the sieve), the classification speed is extremely low. Furthermore, since it is produced by mechanically knitting, it is extremely difficult to precisely control the size of the sieve hole 10.

Further, Japanese Unexamined Patent Publication No. 10-53858 describes a method of producing a sieve plate for particle classification by using photolithography and electrolytic plating in combination. In this method, a large number of protrusions corresponding to the sieve holes are formed on the substrate with photoresist, and a metal layer is formed with a thickness less than the height of the protrusions by electrolytic plating or the like, and then the substrate and the protrusions are melted. Remove. The metal layer thus obtained is used as a sieving plate. In this publication, as fine particles to be classified, the particle diameter is from several tens of μm to several hundreds of μm.
The items up to are listed.

In photolithography using a conventionally known photosensitive resin, it is necessary to set the film thickness of the photosensitive resin layer to less than 10 μm in order to form a pattern having a line width of 10 μm or less. Therefore, when a sieving plate having square sieving holes with a side of 10 μm or less is produced by the above method, the thickness thereof becomes less than 10 μm, and the mechanical strength becomes insufficient. In addition, since the fine particles classified by the conventional method have a form in which a plurality of fine particles are adhered by aggregating, a separation work is required when using them by separating them one by one in the subsequent process, and the handling thereof is difficult. There were some difficult problems.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and can classify fine particles (for example, particles having a diameter of 10 μm or less) with high accuracy (narrow). Provided is a method for producing a precision sieving plate, which can be carried out efficiently (with a particle size distribution) and can obtain a precision sieving plate having sufficient mechanical strength, and further can obtain fine particles which are difficult to aggregate after classification. This is an issue.

[0008]

In order to solve the above problems, the present invention provides the following method as a method for forming holes in a precision sieving plate. 1. The thickness is 10 μm or more and 100 μm or less, the sieving holes are formed in a predetermined arrangement so that the opening ratio is 20% or more and 80% or less, and the sieving holes have a circular or polygonal plan shape, and the size of the sieving holes is Has a diameter of 1 to 10 μm when the sieving hole has a circular plane shape, and the standard deviation of the diameter distribution of the sieving hole is 25
% Or less, and when the sieving hole has a polygonal planar shape, the shortest side is 1 to 10 μm, and the standard deviation of the distribution of the length of the shortest side of the sieving hole is 25% of the average value of the lengths. A precision sieving plate characterized in that the ratio of the depth of the hole to the shortest length on the projection plane of the hole is 1.5 or more.

2. The number average molecular weight obtained by condensation of a dicarboxylic acid component and a diol component is 500 or more and 500 or more.
It comprises an unsaturated polyester of 0 or less, the dicarboxylic acid component contains a first compound represented by the following formula (1) and a second compound represented by the following formula (2), and the molar ratio of all dicarboxylic acid components is 1 And a prepolymer having a molar ratio of the first compound of 0.1 or more and 0.4 or less and a molar ratio of the second compound of 0.1 or more and 0.75 or less,

[0010]

[Chemical 3] (In the formula, R 1 and R 2 are COOH or CH ₂ COOH
Represents )

[0011]

[Chemical 4] (In the formula, R 1 and R 2 are COOH or CH ₂ COOH
The, R3, R4 denotes H or CH _3. ) A photosensitive resin containing a reactive monomer and a photopolymerization initiator is used, and the thickness is 10 μm or more and 500 μm on a conductive substrate.
After forming the following photosensitive resin layer, by patterning the photosensitive resin layer by photolithography, a columnar body made of a cured product of the photosensitive resin is formed on the conductive substrate in an arrangement corresponding to the sieve holes. , Then, after growing a metal layer on this conductive substrate by an electrolytic plating method, the columnar body and the conductive substrate on this conductive substrate are removed, and then metal or metal is formed on the entire surface including the inside of the hole. Item 2. The method for producing a precision sieving plate according to Item 1, wherein smaller holes are formed by depositing ceramics.

3. In the method for producing a precision sieving plate according to Item 2, a method of forming a smaller hole by depositing a metal or ceramics on the entire surface including the inside of the hole is an electroless plating method, an electrolytic plating method, a sputter deposition method. A method for producing a precision sieve plate, which is a method selected from a vacuum evaporation method, a plasma CVD method, a laser ablation method, an ion plating method, a plasma oxidation / nitridation method, and a MOCVD method.

4. Forming a through hole corresponding to a sieving hole in a plate-like object made of metal, synthetic resin, or semiconductor by irradiating a predetermined position of the plate-like object having a thickness of 10 μm or more and 100 μm or less with a high energy ray. Item 2. A method for producing a precision sieving plate according to Item 1, which is characterized in that 5. In the insulating fluid, by bringing the needle-shaped electrode close to the metal sheet and causing discharge between the needle-shaped electrode and the metal sheet, by gradually inserting the needle-shaped electrode into the metal sheet, Item 2. The method for producing a precision sieving plate according to Item 1, wherein a through hole corresponding to the sieving hole is opened.

6. The metal sheet or the synthetic resin sheet is punched by a press using a pressing die including a male die having protrusions arranged corresponding to the sieve holes and a female die having recesses for receiving the protrusions. Item 2. The method for producing a precision sieving plate according to Item 1, wherein the sheet is provided with through holes corresponding to the sieving holes. 7. When two precision sieving plates according to item 1 having the same arrangement pitch of holes are arranged in parallel at a constant interval, and the holes of the two precision sieving plates are projected on the same plane with respect to the area of the holes of the sieving plate. The two precision sieving plates are arranged so that the overlapping area ratio of the holes is 90% or less, and the distance between the two precision sieving plates is 1.1 to 2 times the shortest hole length. Precision sieving plate unit featuring.

8. A cylindrical loading part for loading powder for sifting, a precision sieving plate of item 1 or a precision sieving plate unit of item 7 mounted on the bottom of the loading part, and a precision sieving consisting of legs supporting them are hollow. A classifying device which is placed in a container, a liquid substance is placed in the hollow container, and the precision sieving plate or precision sieving plate unit is arranged so as to be immersed in the liquid substance.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. [Sieving plate of the present invention] The material of the precision sieving plate of the present invention is
General-purpose materials such as metal and resin are used. Suitable materials differ depending on the manufacturing method, which will be described later. In the case of a synthetic resin sieve plate, it is preferable to form a metal thin film on the surface thereof in order to prevent the performance of the sieve from being deteriorated by the influence of static electricity.

The thickness of the sieving plate is 10 μm or more and 100 μm
It is the following. If the thickness is less than 10 μm, it does not have sufficient strength for use as a precision sieve. Also, the thickness is 1
If it exceeds 00 μm, it becomes difficult for the particles to pass through the sieving holes, and the classification efficiency is significantly reduced. The opening ratio of the sieve holes is 20% or more and 80% or less. Numerical value of aperture ratio (%)
Is (total area of sieving holes / area of sieving plate) * 100
Given in. If the aperture ratio is smaller than this range, the classification efficiency is poor, and if the aperture ratio exceeds this range, the strength of the sieving plate becomes low. Next, the plane shape of the sieving hole is circular or polygonal, and the size of the sieving hole is 1 to 10 μm when the plane shape of the sieving hole is circular, and The standard deviation of the distribution is 2 of the average diameter
When the sieving hole has a polygonal planar shape, the shortest side is 1 to 10 μm, and the standard deviation of the distribution of the shortest side lengths of the sieving holes is 25% of the average value of the lengths. %
It is the following. This is necessary for classifying particles of 10 μm or less with a narrow particle size distribution. Further, the ratio of the depth of the hole to the shortest length on the projection surface of the hole is 1.5 or more (aspect ratio). If the aspect ratio is less than this value, the possibility that rod-shaped particles will pass increases, which is not preferable.

The shape of the holes of the sieve plate used is a circle or a polygon. These shapes may be appropriately selected according to the purpose. For example, in the case of a rectangle or an ellipse, rod-shaped particles may pass through the holes not only in the longitudinal direction but also in the lateral direction, but the classification efficiency is good. On the other hand, in the case of a perfect circle or a regular polygon, classification efficiency is slightly inferior to that of a hole having a rectangular shape or an elliptical shape, but it is possible to obtain particles having a narrow particle size distribution.

[Manufacturing Method 1 of Precision Sieve Plate] An embodiment of the manufacturing method (first method) of the precision sieve plate of the present invention will be described with reference to FIG. First, a conductive substrate 7 such as an aluminum plate or a stainless plate is prepared, and its surface is subjected to zinc displacement plating. 10-500 μm thick on it
The negative photosensitive resin layer 11 is formed by applying the above-mentioned special photosensitive resin.

Next, the photosensitive resin layer 11 is patterned by photolithography. That is, first, a photomask M having a light transmitting portion corresponding to the shape of the sieving holes and the arrangement in the surface of the sieving plate is prepared. The photomask M is arranged above the negative photosensitive resin layer 11, and high energy light is irradiated from above the photomask M. This state is shown in FIG. Next, a predetermined development process is performed to remove a portion of the photosensitive resin layer 11 which is not exposed to light.

Examples of the light source of high energy light include an ultrahigh pressure mercury lamp, a low pressure mercury lamp, a halogen lamp and a xenon lamp. In order to form a fine pattern having a pore size of 20 μm or less, it is preferable to irradiate parallel rays. As a result, the columnar body 12 made of a cured product of the photosensitive resin is formed on the conductive substrate 7 in a shape and arrangement corresponding to the sieve holes. FIG. 1B shows this state. Next, the metal layer 13 is grown on the conductive substrate 7 by electrolytic plating. FIG. 1C shows this state. This metal layer 13 becomes a precision sieving plate. Here, the thickness of the metal layer 13 is set to be equal to or less than the height of the columnar body 12. When the metal layer 13 is formed to a position higher than the height of the columnar body 12 and the upper surfaces of the adjacent columnar bodies 12 are connected by the metal layer 13, the metal layer on the upper surface of the columnar body 12 is removed.

Electrolytic plating includes copper sulfate plating, copper pyrophosphate plating, nickel plating, chrome plating, palladium,
Any plating such as precious metal plating such as gold may be used. In order to obtain the mechanical strength required for the precision sieving plate, it is preferable to perform nickel plating, chrome plating, and copper plating. Alternatively, a film made of a composite material may be formed on the conductive substrate by incorporating insulating fine particles such as Teflon (registered trademark), silica, or alumina into a metal and performing electroplating. In this case, a precision sieving plate made of a composite material is obtained.

Next, the columnar body 12 is removed by a wet etching method or physically peeling.
FIG. 1D shows this state. Next, the conductive substrate 7 is
It is removed by a wet etching method or by physically peeling. Thereby, the metal precision sieving plate 1 in which the sieving holes 10 are formed in a predetermined arrangement is obtained. FIG. 1 (e) shows this state. Further, metal or ceramics can be deposited on the entire surface of the sieving plate including the inside of the holes formed as described above to form holes having a smaller hole diameter. FIG. 1 (f) shows this state. The method used at this time is electroless plating, electrolytic plating, sputter deposition, vacuum deposition, plasma CVD.
Method, laser ablation method, ion plating method, plasma oxidation / nitridation method, and MOCVD method. In addition, when ceramics are deposited, the surface of the sieve plate becomes an insulator, and the classification efficiency may decrease due to the influence of static electricity when particles are placed in the classification operation. It doesn't matter.

According to this method, minute sieving holes having a diameter of about 10 μm when the plane shape is circular and a shortest side of about 10 μm when the shape is polygonal are formed in a predetermined arrangement. A precision sieving plate having a thickness of 10 to 100 μm can be easily obtained.

[Method 2 for Manufacturing Precision Sieve Plate] An embodiment of the method for manufacturing a precision sieve plate (second method) of the present invention will be described with reference to FIG. First, as shown in FIG. 2A, a metal mask K having an opening K1 corresponding to the sieving hole 10 of the precision sieving plate 1 is prepared. This metal mask K is made of polyimide film (a plate made of synthetic resin)
The mask 14 is arranged above the mask 14 and the excimer laser is irradiated from above the mask K. As a result, the portion of the polyimide film 14 irradiated with the excimer laser is removed, and the through hole is formed. FIG. 2B shows this state. Thereby, the precision sieving plate 1 in which the predetermined sieving holes 10 are formed is obtained. In the case of drilling with an excimer laser, a method of reducing and projecting a mask pattern may be used for the purpose of increasing the energy density of the laser. But in this case
The pattern size of the mask needs to be changed according to the reduction rate.

High-energy rays other than the excimer laser include YAG laser, carbon dioxide laser, copper vapor laser,
Femtosecond laser, electron beam, molecular beam, various ion beams,
Alternatively, a focused ion beam or the like can be used. With respect to the high-energy rays that can be converged to a minute region, a convergent beam of high-energy rays is scanned using a galvanometer mirror, an electromagnet or the like, or a plate-like object forming a through hole is moved using an XY stage. As a result, the through holes can be formed in the plate-shaped object made of synthetic resin or the like in a predetermined arrangement.

In the case of high-energy rays that cannot be converged in a minute area, irradiation is performed using a metal mask or a photomask as described above. Alternatively, a through hole may be formed in a predetermined arrangement in the plate-like object by providing a photosensitive resin layer on the plate-like object forming the through-hole and performing photolithography and etching. When performing plasma etching, inductively coupled plasma (I
It is preferable to adopt a method such as the CP) method.

As the material of the plate-like material used in the second method, the following resin having good dimensional stability can be used in addition to polyimide. As a polymer skeleton such as various liquid crystal polymer films, aramid films and polyester films, aromatic skeletons such as benzene, naphthalene, anthracene, and pyrene, or alicyclic skeletons such as cyclohexane, bicyclohexane, bicyclohexene, and adamantane are included. Preference is given to using polymers.

The material of the plate-like material used in the second method may be a metal such as nickel, chromium, tungsten or copper, or a semiconductor such as silicon, in addition to the synthetic resin. Further, as in the first method, after forming the holes as described above,
It is possible to deposit a metal or ceramics on the entire surface of the sieving plate including the inside of the formed hole to form a hole having a smaller hole diameter. According to this method, a fine sieving hole having a diameter of about 10 μm when the planar shape is circular, and a shortest side of about 10 μm when the planar shape is polygonal is formed in a predetermined arrangement. A precision sieve plate of 10 to 100 μm can be easily obtained.

[Manufacturing Method 3 of Precision Sieve Plate] An embodiment of the manufacturing method of the precision sieve plate (third method) of the present invention will be described with reference to FIG. FIG. 3A is a perspective view for explaining this method, and FIG. 3B is a sectional view. First, as the electrode 2 of the electric discharge machine, one having a needle electrode 21 having the same diameter as the through hole (sieving hole) 10 to be formed at the tip was prepared. The electrode 2 is movable in the vertical direction by the Z stage. Further, the metal sheet 3 forming the through holes 10 was placed in the insulating liquid while being placed on the XY stage.

Next, the electrode 2 is brought close to the metal sheet 3 by the Z stage to cause the electric discharge between the needle electrode 21 and the metal sheet 3. Due to this discharge, the portion of the needle-shaped electrode 21 of the metal sheet 3 is removed, so by continuing the discharge,
The needle electrode 21 is gradually inserted into the metal sheet 3. As a result, the through hole 10 is formed at a predetermined position of the metal sheet 3. After opening one through hole 10, the metal sheet 3 is repeatedly moved by the XY stage to sequentially open the through hole 10 at all positions corresponding to the sieve holes.
As a result, a precision sieving plate having a predetermined sieving hole (through hole 10) can be obtained.

In this embodiment, one needle electrode 21 is used to form the through holes 10 by electric discharge machining by the number of the sieve holes, but a plurality of needle electrodes 21 are arranged corresponding to the sieve holes. The through holes 10 may be formed at all positions corresponding to the sieving holes by performing the electric discharge machining once using the electrodes 2 provided. Further, similarly to the first method, after forming the holes as described above, metal or ceramics may be deposited on the entire surface of the sieve plate including the inside of the formed holes to form holes having a smaller diameter. it can.

According to this method, fine sieving holes having a diameter of about 10 μm when the plane shape is circular and a shortest side of about 10 μm when the plane shape is polygonal are formed in a predetermined arrangement. A precision sieving plate having a thickness of 10 to 100 μm can be easily obtained.

[Manufacturing Method 4 of Precision Sieve Plate] An embodiment of the manufacturing method (fourth method) of the precision sieve plate of the present invention will be described with reference to FIGS. First, a press die is produced. An embodiment of this manufacturing method will be described with reference to FIG. First, a conductive substrate 7 such as an aluminum plate or a stainless plate is prepared, the surface thereof is subjected to zinc displacement plating treatment, a copper layer having a thickness of about 5 μm is further formed, and the copper surface is blackened by an oxidation treatment. On this, the negative type photosensitive resin layer 8 is formed by the same method as the method of forming the photosensitive resin layer 11 described above.

Next, a photomask M having a light shielding portion corresponding to the sieving holes of the precision sieving plate is prepared, and this photomask M is arranged above the photosensitive resin layer 8. High-energy parallel light is emitted from above the photomask M. The parallel light is obtained by processing the light from the light source with a fly-eye lens and several reflecting mirrors. Figure 4 (a)
Indicates this state. Then, a predetermined development process is performed to remove a portion of the photosensitive resin layer 8 which is not exposed to light. Thereby, the through holes 81 corresponding to the sieving holes of the precision sieving plate are formed in the photosensitive resin layer 8. Figure 4
(B) shows this state.

Next, as a pretreatment for plating, the surface of the plate-like material composed of the conductive substrate 7 and the photosensitive resin layer 8 is cleaned by reactive ion etching or the like. That is, the development residue remaining on the plate-like material after development is completely removed. Next, a plate-shaped product composed of the conductive substrate 7 and the photosensitive resin layer 8 is placed in a plating bath, and the conductive substrate 7 is energized to perform nickel electroplating. As a result, the plating layer 9 is formed on the photosensitive resin layer 8 and in the through hole 81. This state is shown in FIG. The thickness of the plating layer 9 is such that the strength required for a pressing die can be exhibited. For example, the depth is about 50 times the depth of the through hole 81.

Next, the conductive substrate 7 is removed from the plate-like material composed of the conductive substrate 7, the photosensitive resin layer 8 and the plated layer 9 by an etching method or by physically peeling. Next, the photosensitive resin layer 8 is peeled off from the plating layer 9. As shown in FIG. 4D, the plating layer 9 has projections 91 corresponding to the arrangement of the sieving holes 10 of the precision sieving plate 1.
It becomes a male type 90 having. Next, this male mold 9 is used except that electrolytic copper plating is performed instead of electrolytic nickel plating.
By performing the same method as the formation method of
A copper mold 15 having the same shape as 0 is manufactured. That is, the mold 15 has the protrusion 15a corresponding to the arrangement of the sieving holes 10 of the precision sieving plate 1. Next, electrolytic plating of nickel is performed on the surface of the mold 15 on the side of the protrusion 15a to form a plating layer 17. This state is shown in FIG. The thickness of the plating layer 17 is such that the strength required for a pressing die can be exhibited. For example, the protrusion length of the protrusion 15a is about 50 times.

Next, the copper mold 15 is roughly etched using a solution in which copper is dissolved, such as ammonium persulfate, an aqueous solution of ferric chloride-hydrochloric acid, or an aqueous solution of cupric chloride, and is left with concentrated nitric acid. The copper is removed by etching to remove it from the plated layer 17. This plating layer 17
As shown in FIG. 4F, the female mold 170 has a recess 171 for receiving the protrusion 91 of the male mold 90. Next, as shown in FIG. 5, the male mold 90 and the female mold 17 thus obtained were obtained.
0 is mounted on the press device 41, and the projections 91 of the male die 90 and the recesses 171 of the female die 170 are accurately meshed with each other. Make a match.

Next, as shown in FIG. 6, the polyimide film 14 was placed between the male mold 90 and the female mold 170 and pressed to sandwich the polyimide film 14 between the projections 91 and the recesses 171. A through hole is formed in the portion. As the pressing device, a flip chip bonder or the like used when the LSI bare chip is inverted and mounted on the substrate can be used. Further, similarly to the first method, after forming the holes as described above, metal or ceramics may be deposited on the entire surface of the sieve plate including the inside of the formed holes to form holes having a smaller diameter. it can.

Next, the precision sieving plate unit of the present invention will be described. The precision sieving plate unit of the present invention is
The precision sieving plate described in claim 1 is used. In order to prevent the rod-shaped particles from passing through, it is preferable that the shape of the holes of the sieve plate used first is a circle or a regular polygon. For example, in the case of a rectangle or an ellipse, rod-shaped particles can pass through the holes not only in the longitudinal direction but also in the lateral direction.

Two precision sieving plates having the same hole arrangement pitch are used, and these are arranged in parallel at a constant interval. At this time, when the holes of two precision sieves are projected on the same plane, the overlapping area of the holes should be 90% or less of the area of the holes.
Place a piece of precision sieving plate. When the holes of two sieving plates are projected on the same plane, the overlapping area of the holes is 9
It is preferable to arrange it so as to be 0% or less. If they are overlapped with each other by more than 90%, rod-shaped particles may pass therethrough, which is not preferable. In addition, the distance between the two sieve plates is
It is preferably 1.1 to 2.5 times the shortest length of the hole. When the ratio is less than 1.1 times, the first sieve plate and the second sieve plate are arranged at positions displaced from each other, so that the spherical particles passing through the first sieve move in the space between the two sieve plates. No, it cannot pass through the second sieve. Also,
If it is larger than 2.5 times, the possibility that rod-shaped particles pass through increases.

Between the two precision sieving plates, spacers 19 with a predetermined interval are inserted at predetermined positions. The spacer must not block the holes in the precision sieve plate. As a method for inserting the spacer, a method using photolithography and a plating method is preferable. That is, the first method is
Form a hole of photosensitive resin in a place other than the hole of the second precision sieving plate, form a metal spacer in that hole by plating, and then align it with the first precision sieving plate. It is a method of joining. In this method, since it is necessary to perform accurate alignment, each precision sieving plate is attached onto the base material, and they are approached while confirming both patterns using a CCD camera. An adhesive or solder plating is placed on the surface of the spacer, and it can be bonded to the other precision sieving plate by heating. The second method is to form a metal spacer on the second precision sieving plate and then successively form the first precision sieving plate on it. At this time, since it is necessary to perform photolithography while aligning the patterns, an exposure device that can accurately align the substrate and the exposure mask is required. Also, in the second method,
Since it is necessary to remove the photo-cured photosensitive resin between the two precision sieving plates, it is necessary to perform heat treatment to a temperature at which the material forming the sieve does not deteriorate (in the case of nickel, the temperature does not exceed 400 ° C). is there. Alternatively, when using a positive photosensitive resin in photolithography,
Since it dissolves in a solvent, it can be removed by dissolving the photosensitive resin in a solvent without the need for overheat treatment.

Next, the classifying device of the present invention will be described. When fine particles having a particle diameter of 10 μm or less are classified by a sieve, it is difficult to perform classification by simply moving the sieve. Also, as a method for classifying large particles having a particle diameter of generally more than 10 μm, an ultrasonic vibrator is attached to a sieve to directly transmit ultrasonic waves to a sieving plate, but the sieving plate has a thickness of 50 μm or less. When made of thin material, ultrasonic vibrations can damage the sieve plate. Also, Japanese Patent Laid-Open No. 2001-25258.
No. 8 describes a method in which a liquid in which particles to be classified are dispersed is placed in one space of a sieve, and a rod-shaped tip that transmits ultrasonic vibration is inserted into the liquid.
Since the sieving plate needs to support the weight of the liquid, it is necessary to install a jig for supporting the sieving plate under the sieving plate, which causes a problem that the opening area is reduced.

The classifying device of the present invention comprises a cylindrical charging part 61 for charging powder for sieving, and the precision sieving plate according to claim 1 or the precision sieving plate according to claim 7 mounted on the bottom of the charging part. A precision sieve 62 consisting of units and legs 68 for supporting them is placed in a hollow container 63, and a liquid substance is placed in the hollow container 63, and the precision sieve plate or the precision sieve is used. Board unit 1
Is a classifier arranged so as to be immersed in a liquid substance.

FIG. 10 is a view showing each part of the classification device. The cylindrical charging part is a cylindrical part that penetrates vertically, and the shape of the cylindrical charging part may be a cylindrical shape or a polygonal cylindrical shape as long as the powder can be easily charged.
Also, the input port can be widened. The precision sieving plate or the precision sieving plate unit 1 is attached to one of the through-holes of the cylindrical insertion portion so that this portion becomes the bottom surface.
It is installed in a hollow container. At this time, if the bottom surface of the precision sieving plate or the precision sieving plate unit comes into contact with the bottom surface of the hollow container, classification cannot be performed. Therefore, feet 68 for separating both bottom surfaces are provided below the precision sifter. ing. The feet are installed so that the precision sieve plate or precision sieve plate unit is horizontal. Otherwise, the classification efficiency will be poor.

The hollow container is a container for receiving fine particles passing through the sieving plate, and its shape is such that the above-mentioned precision sieving can be accommodated therein and can be filled with a liquid substance, and the precision sieving plate is held horizontally. Is. The shape may be circular or polygonal as long as this condition is satisfied. Further, a liquid substance 66 is contained in this hollow container. Precision sieve plate or precision sieve plate unit 1 is immersed in the amount of liquid substance,
Moreover, the amount is such that the liquid does not spill even if the classification operation is performed. As the liquid substance used here, it is necessary to select a liquid in which the particles to be classified do not deteriorate or dissolve. For example, alcohols, water, ketones, ethers, esters, etc. can be mentioned.

The classification method using this classification device is shown in FIG.
It is performed in the manner shown in. The above classifying device is further put in a container 64 larger than this, particles to be classified are put into a charging port, and ultrasonic vibration is applied. In FIG. 11, the ultrasonic transducer is shown by 65. By this method, the load on the precision sieving plate can be greatly reduced, and the life of the precision sieving plate can be greatly extended. It is put in a container that receives particles that have passed through a precision sieve, and since the sieve plate is present in the liquid, the load on the precision sieve plate can be reduced, and an apparatus that applies ultrasonic waves to each container that receives the passed particles, for example, an ultrasonic cleaner. The device configuration is extremely simple.

Further, the fine particles produced by performing the classification operation of the present invention have an extremely interesting effect that the aggregation of particles is reduced. Although the reason for this is not clear, since the precision sieving plate used in the present invention has a large aspect ratio (defined by the depth of the hole relative to the length of the shortest part on the projection plane of the hole), the particles are sieved. It is presumed that it is because when passing through the hole, it collides with the wall of the sieving hole due to ultrasonic vibration, and the surface is scraped and becomes smooth.

The present invention will be described in detail below with reference to examples. The present invention is not limited to the examples.

[0050]

【Example】

[Example 1] [Production of precision sieving plate] A precision sieving plate was produced by the method of the first embodiment. An aluminum plate having a thickness of 100 μm is prepared as the conductive substrate 7, the surface thereof is treated by zinc displacement plating, copper is further deposited to 5 μm in a copper pyrophosphate plating bath, and then the deposited copper surface is subjected to EBARADEN. A substrate having a diffuse reflectance of less than 1% was obtained by performing an oxidation treatment with an electrobright solution manufactured by Sangyo Co., Ltd. The photosensitive resin layer 11 was formed by applying the following liquid photosensitive resin.

The photosensitive resin used had a number average molecular weight of 2
Unsaturated polyester prepolymer which is 000: 100
In parts by weight, tetraethylene glycol dimethacrylate: 10.7 parts by weight, diethylene glycol dimethacrylate: 4.3 parts by weight, pentaerythritol trimethacrylate: 15 parts by weight, phosphoric acid (monomethacryloyloxyethyl): 3.6 parts by weight, 2,2-dimethoxy-
2-phenylacetophenone: 2 parts by weight, 2,6-di-
tert-Butyl-4-methylphenol: 0.04 parts by weight, and "OPLAS Yellow 1" manufactured by Orient Chemical Co., Ltd.
40 ": 0.11 parts by weight was added, and the mixture was obtained by stirring and mixing.

The unsaturated polyester prepolymer having a number average molecular weight of 2,000 is adipic acid: 0.15, itaconic acid: 0.25, fumaric acid: 0.6, and a charged molar ratio of diethylene glycol: 1.0. Obtained by dehydration polycondensation reaction. Here, itaconic acid is represented by the formula (1), one of R1 and R2 is "COOH" and the other is "CH2 COO".
H "corresponds to the first compound. Also, fumaric acid is
In formula (2), R1 and R2 are "COOH" and R3 and R4 are "H". The number average molecular weight was measured using a gel permeation chromatography device manufactured by Shimadzu Corporation and calibrated with a polystyrene standard product.

FIG. 14 shows the shape and arrangement of sieving holes of the precision sieving plate produced in this example. FIG. 14 (a)
FIG. 14 is a perspective view showing one sieving hole of the precision sieving plate and its surroundings, and FIG. 14B is a partial plan view showing the precision sieving plate. In this embodiment, FIG.
As shown in FIG. 2, a precision sieving plate 1 in which circular sieve holes 10 having a diameter of X μm are arranged on the lattice at a pitch (2 × μm) which is twice the diameter of the holes, and circular holes having a diameter of X μm are also arranged at the center of the lattice. There is a plate thickness D: 18 μm, and a sieve A having a circular diameter X of 5 μm and a sieve B having a diameter of 5 μm.
Was produced. In the sieve A, particles having a diameter of 5 μm or less pass through the sieving holes 10, and particles having a diameter of more than 5 μm remain on the sieving plate 1 without passing through the sieving holes 10.

The thickness of the photosensitive resin layer 11 was 20 μm. In addition, as the photomask M of FIG.
A circle having the arrangement shown in (b) was used as a light transmitting portion. As the high-energy light emitted from above the photomask M, light from an ultra-high pressure mercury lamp was processed by a fly-eye lens and several reflecting mirrors into parallel light. In addition, the metal layer 1 is formed by electrolytic nickel plating.
Before forming No. 3, reactive ion etching using oxygen plasma was performed as a pretreatment for plating. The back surface of the aluminum substrate 7 was covered with an adhesive film. Using a nickel plating bath containing a slight amount of boron, the metal layer 13 made of a nickel plating film was grown to a thickness of 18 μm.

The deposited nickel surface was protected by coating an adhesive film, the aluminum plate was removed by wet etching with 10% by volume of hydrochloric acid, and further copper was removed using concentrated nitric acid. Further, the film protecting the surface of nickel was peeled off, and the columnar body 12 made of a cured product of the photosensitive resin remaining in the holes was removed by a reactive ion etching method in an oxygen atmosphere. Next, another precision sieving plate with a diameter of 5 μm prepared by the same method was prepared, and this precision sieving plate was immersed in an electroless nickel plating bath to form a nickel layer with a thickness of 1 μm. A precision sieving plate C having the same sieving holes as those of the precision sieving plate A was obtained. The electroless nickel plating bath was constructed using the Enipack LV process manufactured by EBARA Eugelite.

As described above, the precision sieving plate 1 made of nickel, which has circular sieving holes having a thickness of 20 μm and a diameter of 3 μm in the same arrangement as the sieving A, is used.
A precision sieving plate A having a circular sieving hole 10 having a thickness of 18 μm and a diameter of 5 μm in the arrangement shown in FIG.
A circular sieving hole 10 having a diameter of 8 μm and a diameter of 7 μm is shown in FIG.
A precision sieve plate B having the arrangement of (b) was produced. These precision sieving plates 1 had sufficient mechanical strength to be used as sieving plates.

[Evaluation of Classification Performance] Using the precision sieving plate 1 produced in Example 1, a precision sieve shown in FIG. 10 was produced. This sieve is composed of a loading section 61 for putting powder for sieving and a sieving section 6 equipped with a precision sieving plate 1.
2 and a receiving portion 63 for receiving the powder that has passed through the sieve. Ethanol was put into this precision sieve to a position where the precision sieve plate was attached, and then put in an ultrasonic cleaner. A portion in which the powder is dispersed in ethanol is put into the charging section 61.
Then, vibration was applied at a frequency of 42 kHz with an ultrasonic cleaner. The output of the ultrasonic cleaner was 120W.

First, as the precision sieving plate 1, a precision sieving plate having the above-mentioned precision sieving plate B (hole diameter 7 μm) was used, and the composition described in JP-A-6-223633 was Ag _x.
Cu _{( 1-x)} (0.008 ≦ x ≦ 0.4), the silver concentration on the grain surface is higher than 2.2 times the average silver concentration, and the silver concentration increases toward the grain surface near the surface. Of spherical conductive particles having an area of 1 μm to 2
The powder having a size of 0 μm was classified.

Next, the ethanol in which the powder contained in the container 63a was dispersed by this classification was classified by a precision sieve equipped with the precision sieve plate A (pore diameter 5 μm) as the precision sieve plate 1. When the particle size of the powder remaining on the precision sieving plate 1 was measured by this classification, the average particle size was 5.3 μm and the standard deviation of the particle size distribution was 0.5 μm. Further, ethanol in which the powder contained in the container portion 63 is dispersed by this classification is used as the precision sieving plate 1 as the precision sieving plate C.
Classification was carried out with a precision sieve equipped with (pore size 3 μm). When the particle size of the powder remaining on the precision sieving plate 1 was measured by this classification, the average particle size was 3.5 μm and the standard deviation of the particle size distribution was 0.4 μm.

[0060]

[Example 2] [Production of precision sieving plate] A precision sieving plate was produced by the method of the second embodiment. As the polyimide film 14 of FIG. 2A, one having a thickness of 25 μm was used. As the metal mask K, a mask having a rectangular arrangement shown in FIG. 7B as an opening K1 was prepared.

Irradiation of the excimer laser is performed by LUMONIC.
The excimer laser processing apparatus consisting of the excimer laser “INDEX800” manufactured by S company and the transport system “SIL300H” manufactured by Sumitomo Heavy Industries, Ltd. was used. The wavelength of the laser is 248 nm (krypton gas fluoride), the size of the laser beam is 8 mm × 25 mm, and the oscillation frequency is 2
It was 00 Hz. As described above, the sieving plate 1 made of polyimide and having a thickness of 25 μm is 100 μm × 5 μm.
Sieving A having a rectangular sieving hole 10 of m in the arrangement of FIG. 7 (b), and sieving hole 1 of a rectangular shape of 100 μm × 7 μm
A sieve B having 0 in the arrangement shown in FIG. 7B was produced. This precision sieving plate 1 had sufficient mechanical strength to be used as a sieving plate.

Further, the sieve A and the sieve B were placed in a vacuum apparatus, the surface was treated by reactive ion etching, and then sputter vapor deposition was performed on each side to obtain a thickness of 0.6.
A μm chromium film was formed. The precision sieving plate A1 and the precision sieving plate B1 are the sieving plates formed by these treatments.
And

[Evaluation of Classification Performance] Using the precision sieving plate 1 produced in Example 2, a precision sieve shown in FIG. 10 was produced. Using this precision sieve, the same powder was classified in the same manner as in Example 1. When the particle size of the powder remaining on the precision sieving plate 1 in the classification with the sieve A1 was measured, the average particle size was 6.2 μm, and the standard deviation of the particle size distribution was 1.0 μm.

[0064]

[Example 3] [Production of precision sieve plate] A precision sieve plate was produced by the method of the third embodiment. The shape and arrangement of the sieving holes 10 of the precision sieving plate 1 produced in this example are shown in FIG.
5 is a plan view. The sieve A has a close packing lattice arrangement. That is, a regular hexagon is used as a unit lattice, and six lattice points and a sieve hole are located at the center of the lattice.
Circular sieving hole 10 with diameter d: 8 μm has a side of 14 μm
There are 6 vertices of a regular hexagon and 7 in the center. In the sieve B, the sieve holes are located in the close-packed lattice array similarly to the sieve A, the diameter of the sieve holes is 12 μm, and one side of the regular hexagon is 20 μm.

As the metal sheet 3, a 25 μm thick sheet made of a nickel alloy containing phosphorus was used.
As the electric discharge machine, an ultra-fine electric discharge machine "MG-ED72W" manufactured by Matsushita Electric Industrial Co., Ltd. was used. As the needle-shaped electrode 21, an ultra-fine electric discharge shaft machining machine “MG-” manufactured by Matsushita Electric Industrial Co., Ltd.
ED51 "was used to prepare needle electrodes having diameters of 8 μm and 12 μm. Sieve A having a diameter of 8 μm and Sieve B having a diameter of 10 μm were used.

As described above, the sieving plate 1 made of nickel alloy and having a thickness of 20 μm, in which the circular sieving holes 10 having a diameter of 8 μm are arranged at a pitch of 16 μm in the arrangement of FIG. A sieve B having circular sieve holes 10 arranged at a pitch of 20 μm in the arrangement shown in FIG. 9 was produced.
This precision sieving plate 1 had sufficient mechanical strength to be used as a sieving plate. Further, the sieve A and the sieve B are placed in a vacuum apparatus, the surface is treated by reactive ion etching, and then plasma CVD treatment is performed on each side to form a silicon nitride film having a thickness of 0.6 μm. Tungsten was sputter deposited to a thickness of 0.4 μm. The sieves formed by these treatments are referred to as sieve A1 and sieve B1. Obtained precision sieving plates A1 and B
The average values of the diameters of the through holes of 1 are 6.2 μm and 1 respectively.
It was 0 μm.

[Evaluation of Classification Performance] Using the precision sieving plate 1 produced in this Example 3, a precision sieve shown in FIG. 10 was produced. Using this precision sieve, the same powder was classified in the same manner as in Example 1. When the particle size of the powder remaining on the precision sieving plate 1 in the classification with the sieve A was measured,
The average particle size was 6.5 μm, and the standard deviation of the particle size distribution was 0.8 μm.

[0068]

[Example 4] [Production of precision sieving plate] A precision sieving plate was produced by the method of the fourth embodiment. The shape and arrangement of the sieving holes of the precision sieving plate produced in this example are the same as those in the example 3 shown in FIG. 15, and the sieving holes having a diameter (d) of 12 μm are regular hexagons having a side length of 18 μm as a unit cell. A precision sieving plate A having an arrangement of the closest packing lattice and having a diameter (d) of 1
A precision sieving plate B having an arrangement of a close-packed lattice having a regular hexagon having a side of 21 μm with a sieve hole of 5 μm as one side was prepared.

Male mold 90 and female mold 170 for press die
Was specifically prepared as follows. The conductive substrate 7 used was the same as that used in Example 1. The photosensitive resin layer 8 was formed with the same photosensitive resin as in Example 1 by the same method to a thickness of 100 μm. As the photomask M of FIG. 4A, a glass photomask regularly arranged in the same arrangement as the arrangement of the sieve holes 10 shown in FIG. 15 was prepared. The irradiation method of the high energy light is the first embodiment.
The same method as that for the photosensitive resin layer 11 was used.

The reactive ion etching for the pretreatment of plating was performed by using "PC-1000-5030" manufactured by Yamato Scientific Co., Ltd. while introducing oxygen gas into the system. The thickness of the plating layer 9 formed by nickel plating was 5 mm. The conductive substrate 7 was removed by wet etching using hydrochloric acid. Further, a copper mold 15 was produced by electrolytic copper plating using copper sulfate. The thickness of the plated layer 17 formed by nickel plating was 5 mm. The copper mold 15 was removed by wet etching using an ammonium persulfate aqueous solution and concentrated nitric acid.

The polyimide film 14 has a thickness of 25.
The thing with a micrometer was used. A flip chip bonder was used as the pressing device, and the pressing pressure was 2 MPa. As described above, the polyimide sieving plate 1 having a thickness of 25 μm and the circular sieving holes 10 having a diameter of 12 μm are formed as shown in FIG.
There are 5 arrangements, and one side of a regular hexagon that is a unit cell is 18
A precision sieving plate A having a size of μ and a circular sieving hole 10 having a diameter of 15 μm were arranged in FIG. 15, and a precision sieving plate B having one side of a regular hexagon as a unit lattice at a pitch of 21 μm was produced. These precision sieving plates 1 had sufficient mechanical strength to be used as sieving plates.

Further, the precision sieving plate A and the precision sieving plate B were put in a vacuum apparatus, and after the surfaces were treated by reactive ion etching, sputter vapor deposition was performed on each side to obtain a chromium film having a thickness of 0.3 μm. A nickel film having a thickness of 0.3 μm was formed. Then, it was placed in an electroless nickel plating bath and grown to a thickness of 1.5 μm. The precision sieve plate A1 and the precision sieve plate B are the sieves formed by these treatments.
Set to 1. By these treatments, the average pore diameter of A1 was 7.8 μm, and the average pore diameter of B1 was 9.5 μm.

[Evaluation of Classification Performance] Using the precision sieving plate 1 produced in Example 4, a precision sieve shown in FIG. 8 was produced. Using this precision sieve, the same powder was classified in the same manner as in Example 1. When the particle size of the powder remaining on the precision sieving plate 1 in the classification with the sieve A was measured, the average particle size was 7.2 μm, and the standard deviation of the particle size distribution was 0.7 μm.

[0074]

[Example 5] [Production of precision sieving plate] First, a precision sieving plate 1A having a circular hole diameter of 7 µm was produced in the same manner as in Example 1. However, as shown in FIG. 9A, the holes are arranged at the positions of the lattice points, and the arrangement pitch of the adjacent lattice points is 12 μm. Next, the precision sieving plate 1B having the same hole diameter and the same hole arrangement as the precision sieving plate 1A is manufactured by the same method as in Example 1 up to the intermediate step, that is, the patterning of the photosensitive resin on the conductive substrate and the subsequent electrolytic nickel plating step. Up to the same method.

As shown in FIG. 9B, the same photosensitive resin having a thickness of 20 μm was formed again on the formed nickel pattern without removing the photo-cured resin pattern.
Furthermore, the nickel pattern and the mask pattern were aligned and exposed using an aligner capable of aligning, and a pattern in which circular holes of the photosensitive resin were formed on the nickel layer was obtained through the developing process (FIG. 9 ( c)). In this step, the diameter of the holes was 7 μm, and the array pitch was 12 μm. The mask was aligned so that the formed circular holes of the photosensitive resin were located at the center of the grid in which the holes formed in the nickel layer were arranged.

Subsequently, nickel was deposited to a height of 10 μm by the electrolytic nickel plating method. Following electrolytic nickel plating, electrolytic solder plating was carried out to form a solder layer having a height of 5 μm (FIG. 9 (d)). Next, the photocured photosensitive resin was removed by reactive ion etching in an oxygen atmosphere. Further, the aluminum layer used as the conductive substrate was removed by etching using a 10% by volume hydrochloric acid aqueous solution, and the exposed copper substrate was removed by etching using concentrated nitric acid.

The precision sieving plate 1B in which the laminated convex pattern made of nickel and solder is formed on the surface of the nickel precision sieving formed as described above and the nickel precision sieving plate 1A already manufactured are shown in FIG. As shown in the sectional view of (a), make sure that the holes in both sieve plates do not overlap CC
Accurate alignment was performed using a D camera, and partial temporary fixing was performed using a solder paste having a melting point higher than that of the formed solder plating. Finally, the temperature was brought to a temperature at which the solder plating melted, and both precision sieves were bonded. Precision sieving plate 1A
The distance between 1 and 1B was 12 μm.

[Evaluation of classification performance] As shown in FIG. 12, each precision sieving plate 1A, 1A connected by soldering
A cylinder 67 having a different diameter is attached to B using an adhesive,
Formed a precision sieve. The precision sieve was then placed in a container that received the powder that passed through the sieve, and ethanol was poured into the container until the precision sieve plate was immersed.

Then, as in Example 1, the container was inserted into an ultrasonic cleaning machine, and ultrasonic vibration was applied to classify the particles. The particles before classification have an average particle size of 7.1 μm and a standard deviation of particle size distribution of 0.6 μm.
, Which contained rod-shaped particles. As a result of observation with a scanning electron microscope (SEM), the existence probability of rod-shaped particles was about 2%. When the particles that passed through the precision sieve were observed using SEM, no rod-shaped particles were present.

[0080]

[Comparative Example 1] "OMR83" (cyclized rubber type photosensitive resin) manufactured by Tokyo Ohka Kogyo Co., Ltd. was used as the photosensitive resin, and the thickness of the photosensitive resin layer 11 was set to 5 µm, and a metal made of nickel alloy was used. The thickness of the layer 13 was 2 μm. Except for this, the precision sieving plate 1 was manufactured by the same method as in Example 1. However, when the conductive substrate 7 is removed from the state shown in FIG. 1D, the metal layer 13 forming the precision sieving plate 1 has wrinkles or cracks and is broken, so that it can be used as a sieving plate. Was not.

[0081]

[Comparative Example 2] The same powder classification as in Example 1 was carried out using an air stream classifier "Turbo Classifier TC15" manufactured by Nisshin Engineering Co., Ltd. The target average particle size during classification was set to 6 μm. As a result, the average particle size of the powder after classification was 5.7 μm, which was close to the set value of 6 μm, but the particle size was widely distributed from 1 μm to 15 μm, and the standard deviation of the particle size distribution was 3 μm. .

[0082]

As described above, according to the method for manufacturing a precision sieving plate of the present invention, the diameter is about 10 μm when the planar shape is circular, and the shortest side is 10 μm when the planar shape is polygonal. It is possible to easily obtain a precision sieving plate having a thickness of 10 to 100 μm, in which fine sieving holes of a certain size are formed in a predetermined arrangement. By using the precision sieving plate obtained by the method of the present invention, classification of fine particles (for example, particles having a diameter of 10 μm or less) can be performed accurately (with a narrow particle size distribution) and efficiently. Moreover, this precision sieving plate has sufficient mechanical strength.

[Brief description of drawings]

FIG. 1 is a diagram illustrating an embodiment of a method for manufacturing a precision sieving plate (first method) of the present invention.

FIG. 2 is a diagram illustrating an embodiment of a method for manufacturing a precision sieving plate (second method) of the present invention.

FIG. 3 is a diagram illustrating an embodiment of a method (third method) for manufacturing a precision sieve plate of the present invention.

FIG. 4 is a diagram illustrating an embodiment of a method for manufacturing a precision sieving plate (fourth method) of the present invention.

FIG. 5 is a diagram illustrating an embodiment of a method for manufacturing a precision sieving plate (fourth method) of the present invention.

FIG. 6 is a diagram illustrating an embodiment of a method for manufacturing a precision sieving plate (fourth method) of the present invention.

FIG. 7 is a perspective view (a) and a plan view (b) showing the shape and arrangement of sieving holes of the precision sieving plate produced in Example 2.

FIG. 8 is a cross-sectional view (a) showing a cross-sectional structure of a precision sieving plate produced in Example 5 and a perspective view (b) showing two precision sieving plates as constituent elements.

FIG. 9 is a perspective view showing a precision sieve manufactured in Example.

FIG. 10 is a diagram illustrating a method for manufacturing one precision sieving plate out of two precision sieving plates that are constituent elements of the precision sieving plate manufactured in Example 5.

FIG. 11 is a cross-sectional view showing the cross-sectional structure of the classification device used in the examples.

FIG. 12 is a cross-sectional view showing the cross-sectional structure of the precision sieve manufactured in Example 5.

FIG. 13 is a partially enlarged plan view showing a conventional sieve.

FIG. 14 is an example of a layout view of holes in a precision sieving plate.

FIG. 15 is a view showing the arrangement of sieving holes of precision sieving plates produced in Examples 3 and 4.

[Explanation of symbols]

1 Precision sieve plate 1A First precision sieve plate 1B Second precision sieve plate 2 electrodes 3 metal sheets 4a Spherical particles passing through a sieve hole 4b Spherical particles remaining on the sieve plate 7 Conductive substrate 8 Photosensitive resin layer 8a through hole 9 plating layer 10 Sieve holes (through holes) 11 Photosensitive resin layer 12 Columnar body made of cured product of photosensitive resin 13 metal layers 14 Polyimide film (a plate made of synthetic resin) 15 Copper mold 15a protrusion 16 Metal or ceramic layer 17 Plating layer 19 Spacer (Metal columnar body) 20 Sheet consisting of adhesive layer 21 Needle electrode 25 Unit area for calculating the opening ratio of the sieve 41 Press machine 42 CCD camera 50 wire rod 61 Input section 62 Precision sieve 63 hollow container 64 ultrasonic cleaner water tank 65 Ultrasonic transducer 66 Liquid substances 67 cylindrical body 68 feet 69 Unit cell showing close packing arrangement of holes 81 through hole 90 Male (press die) 91 protrusion 170 Female mold (press mold) 171 recess D Precision sieve plate thickness h Distance between two precision sieve plates K1 opening K metal mask M photomask W Position deviation of holes in two precision sieve plates

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C08F 283/01 C08F 283/01 4G075 C25D 1/08 C25D 1/08 4J027 C25F 3/00 C25F 3/00 C G03F 7/004 511 G03F 7/004 511 7/20 501 7/20 501 7/40 521 7/40 521 F term (reference) 2H025 AA03 AA04 AB20 AC01 AD01 BC13 BC64 BC85 BC92 CA00 DA18 FA43 2H096 AA30 BA05 HA27 HA28 2H097 BA06 FA02 LA17 4D021 AA01 AB01 AC02 AC08 CA07 CB11 DC02 EA10 4D071 AA02 AB14 AB15 AB45 AB62 AB63 DA20 4G075 AA30 AA62 AA65 BA06 BC01 BC02 BC03 BC04 BD14 CA33 CA36 CA47 EB31 FA02 FB02 FB04 FC10 AB05 AB07 AB24 AB05 ABJ AB27 AB05 AB05 ABJ AB27 AB07 AB05 ABJAB27

Claims (8)

[Claims] 1. The thickness is 10 μm or more and 100 μm or less, the sieving holes are formed in a predetermined arrangement so that the opening ratio is 20% or more and 80% or less, and the sieving holes have a circular or polygonal planar shape. The size of the sieving hole has a diameter of 1 to 10 μm when the sieving hole has a circular planar shape, and the standard deviation of the diameter distribution of the sieving hole is 25% or less of the average value of the diameter, When the planar shape of the sieving hole is a polygon, the shortest side is 1 to 10 μm, and the standard deviation of the distribution of the length of the shortest side of the sieving hole is 25% or less of the average value of the lengths. Further, the ratio of the depth of the hole to the shortest length on the projection surface of the hole is 1.5 or more, which is a precision sieving plate. 2. A number-average molecular weight obtained by condensation of a dicarboxylic acid component and a diol component is 500 or more and 5000.
It is composed of the following unsaturated polyester, the dicarboxylic acid component contains a first compound represented by the following formula (1) and a second compound represented by the following formula (2), and the molar ratio of all dicarboxylic acid components is 1 And a prepolymer having a molar ratio of the first compound of 0.1 or more and 0.4 or less and a molar ratio of the second compound of 0.1 or more and 0.75 or less. 1] (In the formula, R 1 and R 2 are COOH or CH ₂ COOH
Represents ) [Chemical 2] (In the formula, R 1 and R 2 are COOH or CH ₂ COOH
The, R3, R4 denotes H or CH _3. ) A photosensitive resin containing a reactive monomer and a photopolymerization initiator is used, and the thickness is 10 μm or more and 500 μm on a conductive substrate.
After forming the following photosensitive resin layer, by patterning the photosensitive resin layer by photolithography, a columnar body made of a cured product of the photosensitive resin is formed on the conductive substrate in an arrangement corresponding to the sieving holes. , Then, after growing a metal layer on the conductive substrate by an electrolytic plating method, the columnar body and the conductive substrate on the conductive substrate are removed, and then metal or metal is formed on the entire surface including the inside of the hole. The method for producing a precision sieving plate according to claim 1, wherein smaller holes are formed by depositing ceramics. 3. The method for producing a precision sieving plate according to claim 2, wherein a method of forming a smaller hole by depositing metal or ceramics on the entire surface including the inside of the hole is an electroless plating method or an electrolytic method. A method for producing a precision sieve plate, which is a method selected from a plating method, a sputter deposition method, a vacuum deposition method, a plasma CVD method, a laser ablation method, an ion plating method, a plasma oxidation / nitridation method, and a MOCVD method. 4. A plate-like object made of a metal, a synthetic resin, or a semiconductor and having a thickness of 10 μm or more and 100 μm or less is irradiated with a high energy ray to the plate-like object,
The method for manufacturing a precision sieving plate according to claim 1, wherein a through hole corresponding to the sieving hole is formed. 5. By gradually inserting the needle-shaped electrode into the metal sheet while bringing the needle-shaped electrode close to the metal sheet in the insulating fluid to cause a discharge between the needle-shaped electrode and the metal sheet, The method for manufacturing a precision sieving plate according to claim 1, wherein the metal sheet is provided with through holes corresponding to the sieving holes. 6. A metal sheet or a synthetic resin sheet is punched by a press using a pressing die including a male die having protrusions arranged corresponding to sieving holes and a female die having recesses for receiving the protrusions. The method for producing a precision sieving plate according to claim 1, wherein the metal sheet is provided with through holes corresponding to the sieving holes. 7. The two precision sieving plates according to claim 1, which have the same hole arrangement pitch, are arranged parallel to each other at a constant interval, and the two precision sieving holes are provided with respect to the area of the holes of the sieving plate. The ratio of the overlapping area of holes when projected on the same plane is 90
A precision sieving plate unit characterized in that two precision sieving plates are arranged so that the ratio is less than or equal to%, and the interval between the two precision sieving plates is 1.1 to 2 times the shortest hole length. 8. A cylindrical charging part for charging powder for sieving, a precision sieving plate according to claim 1 or a precision sieving plate unit according to claim 7 mounted on the bottom of the charging part, and feet supporting them. A precision sieve consisting of is contained in a hollow container, a liquid substance is placed in the hollow container, and the precision sieving plate or precision sieving plate unit is arranged so as to be immersed in the liquid substance. Classification device.