JP2003218346A5 - - Google Patents

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Publication number
JP2003218346A5
JP2003218346A5 JP2002363419A JP2002363419A JP2003218346A5 JP 2003218346 A5 JP2003218346 A5 JP 2003218346A5 JP 2002363419 A JP2002363419 A JP 2002363419A JP 2002363419 A JP2002363419 A JP 2002363419A JP 2003218346 A5 JP2003218346 A5 JP 2003218346A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002363419A
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JP2003218346A (ja
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Priority claimed from US10/029,583 external-priority patent/US20030116531A1/en
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Publication of JP2003218346A publication Critical patent/JP2003218346A/ja
Publication of JP2003218346A5 publication Critical patent/JP2003218346A5/ja
Withdrawn legal-status Critical Current

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JP2002363419A 2001-12-20 2002-12-16 分子エレクトロニクス用に分子を整列させるために1つまたは複数のナノポアを形成する方法 Withdrawn JP2003218346A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/029,583 US20030116531A1 (en) 2001-12-20 2001-12-20 Method of forming one or more nanopores for aligning molecules for molecular electronics
US10/029583 2001-12-20

Publications (2)

Publication Number Publication Date
JP2003218346A JP2003218346A (ja) 2003-07-31
JP2003218346A5 true JP2003218346A5 (ja) 2006-02-09

Family

ID=21849787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002363419A Withdrawn JP2003218346A (ja) 2001-12-20 2002-12-16 分子エレクトロニクス用に分子を整列させるために1つまたは複数のナノポアを形成する方法

Country Status (3)

Country Link
US (2) US20030116531A1 (ja)
JP (1) JP2003218346A (ja)
GB (1) GB2387272B (ja)

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DE10161312A1 (de) * 2001-12-13 2003-07-10 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung
US6919002B2 (en) * 2002-05-17 2005-07-19 Agilent Technologies, Inc. Nanopore system using nanotubes and C60 molecules
JP4418300B2 (ja) * 2004-05-25 2010-02-17 株式会社日立製作所 記録媒体作製方法とこれを用いた記録媒体及び情報記録再生装置
US20050287523A1 (en) * 2004-06-01 2005-12-29 The Regents Of The University Of California Functionalized platform for individual molecule or cell characterization
JP4813775B2 (ja) * 2004-06-18 2011-11-09 日本電信電話株式会社 多孔構造体及びその製造方法
US7102204B2 (en) * 2004-06-29 2006-09-05 International Business Machines Corporation Integrated SOI fingered decoupling capacitor
US7553730B2 (en) * 2006-07-14 2009-06-30 Agilent Technologies, Inc. Methods of fabrication employing nanoscale mandrels
US8192600B2 (en) * 2007-09-27 2012-06-05 The Board Of Trustees Of The University Of Illinois Solid state device
DE102008039798A1 (de) * 2008-08-15 2010-02-25 NMI Naturwissenschaftliches und Medizinisches Institut an der Universität Tübingen Verfahren zur Übertragung von Nanostrukturen in ein Substrat
JP2010283381A (ja) * 2010-08-26 2010-12-16 Nippon Telegr & Teleph Corp <Ntt> ヘテロ構造の製造方法
US8535512B2 (en) 2010-09-30 2013-09-17 California Institute Of Technology Devices and methods for sequencing nucleic acids
WO2012045016A2 (en) * 2010-09-30 2012-04-05 California Institute Of Technology Particulate nanosorting stack
US8889562B2 (en) 2012-07-23 2014-11-18 International Business Machines Corporation Double patterning method
CN104803348A (zh) * 2015-04-20 2015-07-29 中国科学院光电技术研究所 一种牺牲模板制备高深宽比聚合物纳米柱阵列的方法
EP3343651B1 (en) * 2015-10-02 2019-09-18 Central Glass Company, Limited Thermoelectric conversion material and method for producing same
CN109072451B (zh) 2016-03-18 2021-08-03 麻省理工学院 纳米多孔半导体材料及其制造
CN106315505B (zh) * 2016-08-24 2018-11-06 深圳先进技术研究院 一种增强聚酰亚胺基底和导电金属层之间的粘附力的方法
US10370247B2 (en) 2016-08-29 2019-08-06 International Business Machines Corporation Contacting molecular components
US10739299B2 (en) * 2017-03-14 2020-08-11 Roche Sequencing Solutions, Inc. Nanopore well structures and methods
CN111937120A (zh) 2018-04-05 2020-11-13 麻省理工学院 多孔和纳米多孔半导体材料及其制造
CN110364594B (zh) * 2019-07-19 2020-05-29 中原工学院 一种氮化镓或氮化铝纳米孔的制备方法
US11674947B2 (en) 2020-06-13 2023-06-13 International Business Machines Corporation Nanopore structures
US11715640B2 (en) * 2020-09-30 2023-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning material including silicon-containing layer and method for semiconductor device fabrication
US20220102200A1 (en) * 2020-09-30 2022-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning material including carbon-containing layer and method for semiconductor device fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407695A (en) * 1981-12-31 1983-10-04 Exxon Research And Engineering Co. Natural lithographic fabrication of microstructures over large areas
US5393373A (en) * 1991-07-11 1995-02-28 Goldstar Electron Co., Ltd. Methods of patterning and manufacturing semiconductor devices
US5569355A (en) * 1995-01-11 1996-10-29 Center For Advanced Fiberoptic Applications Method for fabrication of microchannel electron multipliers
EP0731490A3 (en) * 1995-03-02 1998-03-11 Ebara Corporation Ultra-fine microfabrication method using an energy beam
US6379572B1 (en) * 2000-06-02 2002-04-30 Sony Corporation Flat panel display with spaced apart gate emitter openings
US6274396B1 (en) * 2001-01-29 2001-08-14 Advanced Micro Devices, Inc. Method of manufacturing calibration wafers for determining in-line defect scan tool sensitivity
JP2003053699A (ja) * 2001-08-10 2003-02-26 Nikon Corp ピンホール製造方法及び測定装置
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same

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