JP2003188287A - 不揮発性半導体記憶装置及びその製造方法 - Google Patents

不揮発性半導体記憶装置及びその製造方法

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Publication number
JP2003188287A
JP2003188287A JP2001383894A JP2001383894A JP2003188287A JP 2003188287 A JP2003188287 A JP 2003188287A JP 2001383894 A JP2001383894 A JP 2001383894A JP 2001383894 A JP2001383894 A JP 2001383894A JP 2003188287 A JP2003188287 A JP 2003188287A
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JP
Japan
Prior art keywords
source
memory cell
insulating film
gate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001383894A
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English (en)
Japanese (ja)
Other versions
JP2003188287A5 (enrdf_load_stackoverflow
Inventor
Seiichi Mori
誠一 森
Masayuki Ichige
正之 市毛
Yuji Takeuchi
祐司 竹内
Akira Aida
晃 合田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001383894A priority Critical patent/JP2003188287A/ja
Publication of JP2003188287A publication Critical patent/JP2003188287A/ja
Publication of JP2003188287A5 publication Critical patent/JP2003188287A5/ja
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2001383894A 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法 Pending JP2003188287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001383894A JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001383894A JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003188287A true JP2003188287A (ja) 2003-07-04
JP2003188287A5 JP2003188287A5 (enrdf_load_stackoverflow) 2005-03-10

Family

ID=27593766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001383894A Pending JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003188287A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142571A (ja) * 2003-11-05 2005-06-02 Magnachip Semiconductor Ltd 不揮発性メモリ素子及びその製造方法
JP2007519257A (ja) * 2004-01-21 2007-07-12 サンディスク　コーポレイション Ｈｉｇｈ−Ｋ材料とゲート間プログラミングとを使用する不揮発性メモリ・セル
JP2007526632A (ja) * 2004-02-13 2007-09-13 サンディスク　コーポレイション 浮遊ゲート間のクロスカップリングを制限するシールド板
JP2007263681A (ja) * 2006-03-28 2007-10-11 Fuji Electric Device Technology Co Ltd 圧力検出装置および内燃機関の吸気通路
JP2010515271A (ja) * 2006-12-28 2010-05-06 サンディスク コーポレイション 不揮発性メモリ内のフィールド結合を減少させるシールドプレートの製造方法
US7763929B2 (en) 2006-01-17 2010-07-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device comprising shield electrode on source and method for manufacturing the same
WO2021005432A1 (ja) * 2019-07-05 2021-01-14 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142571A (ja) * 2003-11-05 2005-06-02 Magnachip Semiconductor Ltd 不揮発性メモリ素子及びその製造方法
JP2007519257A (ja) * 2004-01-21 2007-07-12 サンディスク　コーポレイション Ｈｉｇｈ−Ｋ材料とゲート間プログラミングとを使用する不揮発性メモリ・セル
JP2007526632A (ja) * 2004-02-13 2007-09-13 サンディスク　コーポレイション 浮遊ゲート間のクロスカップリングを制限するシールド板
US7763929B2 (en) 2006-01-17 2010-07-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device comprising shield electrode on source and method for manufacturing the same
JP2007263681A (ja) * 2006-03-28 2007-10-11 Fuji Electric Device Technology Co Ltd 圧力検出装置および内燃機関の吸気通路
JP2010515271A (ja) * 2006-12-28 2010-05-06 サンディスク コーポレイション 不揮発性メモリ内のフィールド結合を減少させるシールドプレートの製造方法
WO2021005432A1 (ja) * 2019-07-05 2021-01-14 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JPWO2021005432A1 (enrdf_load_stackoverflow) * 2019-07-05 2021-01-14
TWI859261B (zh) * 2019-07-05 2024-10-21 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US12219771B2 (en) 2019-07-05 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide and method for manufacturing semiconductor device using oxide
JP7686557B2 (ja) 2019-07-05 2025-06-02 株式会社半導体エネルギー研究所 半導体装置の作製方法

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