JP2003188287A - 不揮発性半導体記憶装置及びその製造方法 - Google Patents

不揮発性半導体記憶装置及びその製造方法

Info

Publication number
JP2003188287A
JP2003188287A JP2001383894A JP2001383894A JP2003188287A JP 2003188287 A JP2003188287 A JP 2003188287A JP 2001383894 A JP2001383894 A JP 2001383894A JP 2001383894 A JP2001383894 A JP 2001383894A JP 2003188287 A JP2003188287 A JP 2003188287A
Authority
JP
Japan
Prior art keywords
source
memory cell
insulating film
gate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001383894A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003188287A5 (cg-RX-API-DMAC7.html
Inventor
Seiichi Mori
誠一 森
Masayuki Ichige
正之 市毛
Yuji Takeuchi
祐司 竹内
Akira Aida
晃 合田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001383894A priority Critical patent/JP2003188287A/ja
Publication of JP2003188287A publication Critical patent/JP2003188287A/ja
Publication of JP2003188287A5 publication Critical patent/JP2003188287A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2001383894A 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法 Pending JP2003188287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001383894A JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001383894A JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003188287A true JP2003188287A (ja) 2003-07-04
JP2003188287A5 JP2003188287A5 (cg-RX-API-DMAC7.html) 2005-03-10

Family

ID=27593766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001383894A Pending JP2003188287A (ja) 2001-12-18 2001-12-18 不揮発性半導体記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003188287A (cg-RX-API-DMAC7.html)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142571A (ja) * 2003-11-05 2005-06-02 Magnachip Semiconductor Ltd 不揮発性メモリ素子及びその製造方法
JP2007519257A (ja) * 2004-01-21 2007-07-12 サンディスク　コーポレイション Ｈｉｇｈ−Ｋ材料とゲート間プログラミングとを使用する不揮発性メモリ・セル
JP2007526632A (ja) * 2004-02-13 2007-09-13 サンディスク　コーポレイション 浮遊ゲート間のクロスカップリングを制限するシールド板
JP2007263681A (ja) * 2006-03-28 2007-10-11 Fuji Electric Device Technology Co Ltd 圧力検出装置および内燃機関の吸気通路
JP2010515271A (ja) * 2006-12-28 2010-05-06 サンディスク コーポレイション 不揮発性メモリ内のフィールド結合を減少させるシールドプレートの製造方法
US7763929B2 (en) 2006-01-17 2010-07-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device comprising shield electrode on source and method for manufacturing the same
JPWO2021005432A1 (cg-RX-API-DMAC7.html) * 2019-07-05 2021-01-14
CN114708899A (zh) * 2022-03-28 2022-07-05 长江存储科技有限责任公司 存储系统、三维存储器及其编程方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142571A (ja) * 2003-11-05 2005-06-02 Magnachip Semiconductor Ltd 不揮発性メモリ素子及びその製造方法
JP2007519257A (ja) * 2004-01-21 2007-07-12 サンディスク　コーポレイション Ｈｉｇｈ−Ｋ材料とゲート間プログラミングとを使用する不揮発性メモリ・セル
JP2007526632A (ja) * 2004-02-13 2007-09-13 サンディスク　コーポレイション 浮遊ゲート間のクロスカップリングを制限するシールド板
US7763929B2 (en) 2006-01-17 2010-07-27 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device comprising shield electrode on source and method for manufacturing the same
JP2007263681A (ja) * 2006-03-28 2007-10-11 Fuji Electric Device Technology Co Ltd 圧力検出装置および内燃機関の吸気通路
JP2010515271A (ja) * 2006-12-28 2010-05-06 サンディスク コーポレイション 不揮発性メモリ内のフィールド結合を減少させるシールドプレートの製造方法
JPWO2021005432A1 (cg-RX-API-DMAC7.html) * 2019-07-05 2021-01-14
WO2021005432A1 (ja) * 2019-07-05 2021-01-14 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
TWI859261B (zh) * 2019-07-05 2024-10-21 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US12219771B2 (en) 2019-07-05 2025-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide and method for manufacturing semiconductor device using oxide
JP7686557B2 (ja) 2019-07-05 2025-06-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN114708899A (zh) * 2022-03-28 2022-07-05 长江存储科技有限责任公司 存储系统、三维存储器及其编程方法

Similar Documents

Publication Publication Date Title
US6819590B2 (en) Semiconductor memory
US6191975B1 (en) Non-volatile NAND type semiconductor memory device with stacked gate memory cells and a stacked gate select transistor
JP4822841B2 (ja) 半導体記憶装置及びその製造方法
JP3679970B2 (ja) 不揮発性半導体記憶装置及びその製造方法
JP3540579B2 (ja) 半導体記憶装置及びその製造方法
US7332773B2 (en) Vertical device 4F2 EEPROM memory
JP3317459B2 (ja) 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
US6541326B2 (en) Nonvolatile semiconductor memory device and process of production and write method thereof
US6212103B1 (en) Method for operating flash memory
JP2663863B2 (ja) 不揮発性半導体記憶装置
JP4330670B2 (ja) 不揮発性半導体記憶装置
CN100508199C (zh) 具有非易失存储器的半导体装置及其制造方法
US20080128757A1 (en) Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same
EP0915479A2 (en) Nonvolatile semiconductor memory device and method of reading data therefrom
JPH11224908A (ja) 不揮発性半導体記憶装置及びその書き込み方法
US20040251488A1 (en) Nonvolatile semiconductor memory device and method of reading out same
KR20090106909A (ko) 메모리 소자 및 그 동작방법
US7177192B2 (en) Method of operating a flash memory device
US7242613B2 (en) Nonvolatile semiconductor memory device
US20060063331A1 (en) Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same
US20070257307A1 (en) NAND non-volatile two-bit memory and fabrication method
JP2003188287A (ja) 不揮発性半導体記憶装置及びその製造方法
JPH11195718A (ja) 不揮発性半導体記憶装置と、その製造方法及びその駆動方法
JP3251699B2 (ja) 不揮発性記憶装置
JP2004158614A (ja) 不揮発性半導体メモリ装置およびそのデータ書き込み方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040407

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040407

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050414

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050418

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050506

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050606

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050705

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051003

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20061114