JP2003186049A - Liquid crystal device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal device capable of displaying a high quality image with a relatively simple constitution using a shading film, and to provide an electronic equipment using the same. <P>SOLUTION: The liquid crystal device is provided with shading scanning lines arranged on a substrate, a semiconductor layer 1a forming thin film transistors 30 arranged via an insulating film 2 under the scanning lines, island- like gate electrodes 3a electrically connected with the scanning lines, pixel electrodes 9a electrically connected with the semiconductor layer 1a forming the thin film transistors 30, and capacitance electrodes 3b forming storage capacitance formed of the same film as the island-like electrodes 3a. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technical field of a liquid crystal device of an active matrix driving system driven by a thin film transistor (hereinafter appropriately referred to as a TFT) and an electronic device using the same, and is particularly used for a liquid crystal projector and the like. Belongs to the technical field of a liquid crystal device in which a light-shielding film is provided below the TFT and electronic equipment using the liquid crystal device.

[0002]

2. Description of the Related Art Conventionally, when this type of liquid crystal device is used as a light valve in a liquid crystal projector or the like, various techniques described below have been adopted in order to improve the quality of a displayed image. .

First, when the liquid crystal device is used as a light valve, the projection light is generally incident from the side of the counter substrate which is arranged to face the liquid crystal device substrate with the liquid crystal layer interposed therebetween. Here, when the projected light is incident on a channel forming region formed of an a-Si (amorphous silicon) film or a p-Si (polysilicon) film of a TFT, a photocurrent is generated in this region due to a photoelectric conversion effect. TF
The transistor characteristics of T deteriorate. Therefore, the counter substrate is provided with Cr (chromium) at a position facing each TFT.
In general, a light-shielding film called a black matrix or a black mask is formed from a metal material such as or resin black. The light-shielding film defines the opening area of each pixel (that is, the area through which the projection light is transmitted) to improve the contrast and prevent the color mixture of color materials, in addition to the light-shielding for the p-Si layer of the TFT. Fulfills the function of.

Particularly in this type of liquid crystal device,
Positive stagger type or coplanar type a-Si or p-SiTF adopting a top gate structure (that is, a structure in which a gate electrode is provided above a channel on a liquid crystal device substrate)
When T is used, it is necessary to prevent a part of the projected light from entering the channel of the TFT from the side of the liquid crystal device substrate as return light by the projection optical system in the liquid crystal projector. Similarly, when the projection light passes through the projection optical system after being reflected from the surface of the liquid crystal device substrate when it passes, or when it is emitted from another liquid crystal device when multiple liquid crystal devices are used in combination for color. It is also necessary to prevent a part of the incoming projection light from entering the TFT channel from the liquid crystal device substrate side as return light. For this reason, JP-A-9-12
As disclosed in Japanese Patent Publication No. 7497, Japanese Patent Publication No. 3-52611, Japanese Patent Application Laid-Open No. 3-125123, Japanese Patent Application Laid-Open No. 8-171101, etc., a TFT is opposed to a liquid crystal device substrate made of a quartz substrate or the like. Position (ie TFT
The lower side) also employs a technique of forming a light shielding film from an opaque refractory metal, for example.

Secondly, in this type of liquid crystal device, the voltage is applied to the pixel electrode with respect to the time for supplying the image signal to the pixel electrode by turning on the TFT (conducting state) by applying the scanning signal to the gate electrode. In order to lengthen the time for which the liquid crystal drive voltage is held, that is, so that the liquid crystal drive voltage can be applied for a sufficient time even if the duty ratio is small, a technique of adding a storage capacitor to the pixel electrode is adopted.

Here, a method in which a part of the capacitance line formed along the scanning line is configured as the other storage capacitance electrode is generalized. Alternatively, it is also common to add a storage capacitor to a pixel electrode connected to each scanning line via a TFT by using the scanning line in the preceding stage of each scanning line as a capacitance line. That is, the gate insulating film of the TFT of each pixel is extended to be used as a dielectric film, and a semiconductor film forming a source or drain region connected to the pixel electrode is extended to serve as one storage capacitor electrode. A part of the scanning line in the preceding stage is extended and configured as the other storage capacitor electrode. In this case, it is not necessary to separately wire the capacitance line, which is advantageous in manufacturing and also helps to simplify the device configuration.

Thirdly, in this type of liquid crystal device, in order to prevent flicker on the display screen and to prevent liquid crystal deterioration due to application of a DC voltage, the liquid crystal applied voltage is inverted in frame or field units of the image signal, and further, A technique of inverting the liquid crystal applied voltage for each scanning line, each data line or each pixel is adopted.

Among these inversion driving methods, from the viewpoints of reducing misalignment of the liquid crystal portion along the data lines and scanning lines, ensuring the opening area of the pixel portion, and easiness of control, liquid crystal is at least provided for each data line. A method of performing inversion driving of an applied voltage (hereinafter, a scanning line inversion driving method) is predominant.

Fourthly, in the liquid crystal device of this type, in order to reduce the writing load on the data line in the data line driving circuit for writing the image signal to the data line at a predetermined timing, the data line driving circuit is horizontal to each data line. A technique of applying a so-called precharge signal of a predetermined voltage (for example, a voltage of an image signal corresponding to a halftone level) prior to the image signal within the blanking period, that is, precharging is also adopted.

Particularly, in the case of the above-mentioned scanning line inversion driving method, since the data line driving circuit needs to supply the data signal having the voltage of the opposite polarity for each horizontal scanning, this precharging becomes extremely important. .

As described above, the first technique of providing the light-shielding film also on the lower side of the TFT, the second technique of adding the storage capacitance by using the capacitance line or the scanning line of the previous stage, and the scanning line inversion driving method By adopting the third technique for performing the above, the fourth technique for performing the precharge, and the like, it is possible to display a high-quality image by using the liquid crystal device as a light valve of the liquid crystal projector.

[0012]

DISCLOSURE OF THE INVENTION In a liquid crystal device,
Although there is a strong general demand for improving image quality, it is important to increase the drive frequency of the liquid crystal device, but in order to increase the drive frequency so as not to hinder the time-division drive in the active matrix drive method, the data line It is necessary to reduce the resistance and time constant of the scanning line or the capacitance line.

However, the scanning line is generally 600 ° C.
In the case of the above high temperature process, it is formed of a conductive polysilicon film due to the problem of heat resistance. Therefore, even if wirings are formed with the same size, a polysilicon film has a thickness of several hundreds as compared with a metal film such as an aluminum (Al) film.
More than double resistance. Therefore, even in a small liquid crystal device having a diagonal of 2 inches or less, the signal delay of the scanning line cannot be ignored, and accordingly, the time constant of the scanning line may be about several tens of μs. Therefore, there is a problem that a relatively high resistance and a large time constant in the scanning line become a fundamental limitation when increasing the driving frequency. If it is attempted to cope with this problem by forming the scanning line from a metal film having a low resistance, the scanning line also constitutes the gate electrode of the TFT of the pixel, so that activation annealing or the like in the manufacturing process of the TFT is performed. As a result, the semiconductor film, the gate insulating film, the gate electrode (scanning line), etc. are cracked due to the stress generated during manufacturing. Therefore, it is extremely difficult to put this coping method into practical use. Further, in particular, when the scanning line in the previous stage is used as the capacitance line as described above, since the capacitance as the capacitance line of the scanning line in the next stage is added to each scanning line, the time constant of each scanning line is increased. The problem becomes more serious as the size becomes larger.

Further, in the case of performing the precharge as described above, the timing of turning off the TFT in the pixel is delayed when the time constant of the scanning line becomes relatively large with respect to the horizontal blanking period, so that the timing is delayed. By writing a precharge signal for the scanning line in the next stage to the pixel electrode via the TFT whose off time has been delayed, or to the potential of the pixel electrode via the TFT whose off time has been delayed There is a problem that vertical crosstalk occurs because the potential of the precharge signal is pulled and the precharge of the scanning line in the next stage becomes insufficient.

More specifically, as shown in FIG.
When an image 701 in which a black portion is drawn in high contrast with a gray (intermediate color) background is displayed, the n-th image is displayed.
The voltage of the image signal given to another pixel on the pixel row corresponding to the scanning line of the stage (here, the voltage corresponding to gray)
Partially different voltage (here, the voltage corresponding to black)
Image signal is applied, the time constant of the scanning line is relatively large in this way, so that before the gate voltage of the (n-1) th scanning line stabilizes at the off-time potential, that is, the n-th scanning line. −
Before the TFT connected to the first scanning line is turned off,
A precharge signal related to the scanning line in the nth stage is applied. Therefore, the precharge signal drawn to the voltage of the black display at the nth stage is applied to the pixel electrode at the (n-1) th stage, so that the actually displayed image 70 is displayed as shown in FIG.
2, the n−1th pixel above the black displayed pixel is displayed.
The pixels in the second row are displayed in white (not in gray) in the case of scanning line inversion drive. On the other hand, before the gate voltage of the n-th scanning line stabilizes to the potential at the time of off, that is, before the TFT connected to the n-th scanning line is turned off, the n + 1-th scanning line The precharge signal according to is applied. Therefore, the pixel electrode of the (n + 1) th stage is
Since the precharge signal drawn to the voltage for black display in the second stage is applied, in the image 702 actually displayed,
The pixel on the (n + 1) th stage below the pixel displayed in black is
In the case of scan line inversion drive, white display (rather than gray display) results.

As described above, the image 70 actually displayed
In the case of No. 2, white vertical crosstalk occurs above and below the pixels displayed in black in the background that should be displayed in gray, and in the vicinity thereof, transition from white to gray gradually occurs along the scanning line direction. This causes gradation crosstalk.

In this case, in particular, the closer the time point at which image signals of partially different voltages for black display are applied to the end time of writing for each scanning line, that is, the pixel for black display, When a scan signal is supplied from one of the left and right sides on one scan line, the pixel closer to the other side, or the pixel closer to the center when scan signals are supplied from both sides, the scan line Since writing to each pixel in the pixel row is performed before the gate voltage stabilizes at the potential when it is off, the above-described vertical crosstalk is likely to occur remarkably. Therefore, when viewed as the entire screen, there is a problem that deterioration in image quality such as left and right unevenness (when scanning lines are driven from one side) and center unevenness (when scanning lines are driven from both sides) is caused.

In addition, when the capacitance line described above is formed of the same polysilicon film as the scanning line, it has a large resistance and a large time constant like the scanning line. Therefore, the potential of the capacitance line fluctuates due to capacitance coupling with each data line in the capacitance line that is crossed under the plurality of data lines, and image deterioration due to horizontal crosstalk or ghost occurs. There is also a problem.

More specifically, as shown in FIG.
When an image 801 in which a black portion is drawn with a high contrast against a gray background is displayed, before the potential fluctuation of the capacitance line due to such capacitance coupling stabilizes,
Writing to each pixel in the pixel row is performed. Therefore, in the image 802 that is actually displayed, the pixels on the left and right of the pixels to which the image signals of different voltages that are to be black-displayed are partially supplied, and the entire row to be gray-displayed becomes whitish. That is, horizontal crosstalk, ghost, etc. occur.

Also in this case, as in the case of the vertical crosstalk described above (see FIG. 28), the time point at which image signals of partially different voltages to be displayed in black are applied is the end time point of writing for each scanning line. Since the writing to each pixel in the pixel row is performed before the potential fluctuation of the capacitance line due to the capacitive coupling becomes stable, the closer to the point, the horizontal crosstalk, the ghost, and the like are more likely to occur.

The vertical crosstalk (see FIG. 28), the horizontal crosstalk (see FIG. 29), and the like as described above are relative to each other when the driving frequency is high like the liquid crystal devices of so-called XGA, SXGA, and the like. As a result, the time constants of the scanning lines and the capacitance lines become large, so that they easily occur.

The present invention has been made in view of the above-mentioned problems, and provides a liquid crystal device capable of displaying a high quality image and an electronic apparatus including the liquid crystal device with a relatively simple structure using a light shielding film. The challenge is to provide.

[0023]

A liquid crystal device according to the present invention includes a light-shielding scanning line provided on a substrate, a semiconductor layer forming a thin film transistor provided on the scanning line through an insulating film, and Provided on the semiconductor layer via an insulating film,
An island-shaped gate electrode electrically connected to the scanning line,
A pixel electrode electrically connected to a semiconductor layer forming the thin film transistor, and a capacitor electrode forming a storage capacitor formed of the same film as the island-shaped gate electrode are provided.

It is preferable that the storage capacitor includes a capacitor electrode formed of the same film as the island-shaped gate electrode and a capacitor electrode formed of the same film as the semiconductor layer.

The capacitive electrode formed of the same film as the island-shaped gate electrode may extend along the scanning line from a region of the data line electrically connected to the semiconductor layer.

It is preferable that the channel region of the semiconductor layer forming the thin film transistor is formed in a region of a data line electrically connected to the semiconductor layer, and the gate electrode is formed in a region of the scanning line.

According to the present invention, liquid crystal is sandwiched between a pair of substrates, and a plurality of pixel electrodes arranged in a matrix and the plurality of pixel electrodes are provided on one substrate of the pair of substrates. A plurality of thin film transistors to be driven, a plurality of data lines and a plurality of scanning lines which are respectively connected to the plurality of thin film transistors and intersect each other, and at least a channel region of the plurality of thin film transistors as viewed from the one substrate side, respectively. A conductive light-shielding film provided at a position to cover,
A first intervening between the light shielding film and the thin film transistor
An interlayer insulating film is provided, and at least a part of the scanning line is formed of the same film as the light shielding film.

According to such a structure of the present invention, the channel region of the thin film transistor is shielded from the return light and the like incident from the side of the one substrate by the light shielding film,
It is possible to prevent characteristic deterioration due to returning light of the thin film transistor. On the other hand, since at least a part of the scanning line is formed of the same film as this conductive light shielding film, the resistance of the scanning line can be remarkably reduced by the resistance of the conductive light shielding film. For example,
If the scanning line is formed of a polysilicon film and the light shielding film is formed of a conductive refractory metal film, the resistance of the scanning line can be controlled by the sheet resistance of the light shielding film. That is, it is possible to significantly reduce the resistance in the scanning line.

As a result, since the scanning signal is supplied to the plurality of pixel electrodes by the scanning line having the low resistance and the small time constant,
Even if the drive frequency of the liquid crystal device is increased, for example, a precharge signal is applied before the gate of the preceding scanning line is not turned off as described above, or the precharge signal is added to the voltage of the image signal of the preceding scanning line. Vertical crosstalk (see FIG. 28) caused by being pulled or the like is reduced, and high-quality image display can be performed.

According to the present invention, the scanning line is formed of a conductive polysilicon film, and the light-shielding film is a redundant wiring of the scanning line electrically connected to the polysilicon film through a contact hole. It is characterized by having a first light-shielding film provided as at least one of the relay wirings.

According to this structure of the present invention, since the first light-shielding film is electrically connected to the scanning line formed of the conductive polysilicon film through the contact hole, the scanning line The resistance is remarkably lowered by the resistance of the conductive light-shielding film, and a reliable and highly reliable electrical connection state between the scanning line and the first light-shielding film can be realized.

The redundant wiring of the present invention is connected to the scanning line in parallel through, for example, a contact hole,
A wiring that further provides redundant electrical continuity with a scanning line in a conductive state. A relay wiring is partially disconnected by being connected in series with the scanning line, for example, via a contact hole. The wiring that connects the scanning lines with each other to ensure electrical continuity of the entire scanning lines. Therefore, according to such a configuration of the present invention, the resistance of the scanning line can be significantly reduced by the resistance of the conductive light-shielding film forming the first light-shielding film.

In addition to this, when the first light-shielding film is provided as a redundant wiring, the first light-shielding film substitutes for the scanning line even if the scanning line is broken in the middle due to foreign matter or the like.
A redundant structure can be realized.

According to the present invention, the light-shielding film is electrically insulated from the first light-shielding film provided as at least one of the redundant wiring of the scanning line, the relay wiring and the main body. And a second light-shielding film including a portion of the light-shielding film provided at a position covering the channel region.

In the present invention, since the second light-shielding film is electrically insulated from the first light-shielding film, even if the potential of the first light-shielding film changes due to the potential of the scanning signal, the potential of the second light-shielding film is substantially the same. It is stable with little or no change. And
Since the stable second light-shielding film includes the position of the light-shielding film provided below the thin film transistor of the pixel, that is, the position of the light-shielding film provided below the thin film transistor of the pixel. It is possible to prevent the transistor characteristics of the thin film transistor from deteriorating due to the fluctuation of the potential of 2 due to the fluctuation of the potential of the scanning line.

According to the present invention, the scanning line includes a plurality of island-shaped wiring portions which include gate electrodes of the plurality of thin film transistors arranged along the scanning line and are separated from each other, and the first light-shielding film is formed. The plurality of island-shaped wiring portions are electrically connected to each other.

According to such a configuration of the present invention, the plurality of island-shaped wiring portions forming the scanning line include the gate electrodes of the plurality of thin film transistors arranged along the scanning line and are separated from each other. Therefore, although the scanning signal cannot be supplied to each pixel only by the island-shaped wiring portion, since the island-shaped wiring portions are electrically connected to each other by the first light-shielding film,
The scanning signal can be supplied to each pixel. The resistance of the scanning line can be lowered according to the low resistance of the first light-shielding film that relays the island-shaped wiring portion.

In the present invention, the light-shielding film has a first light-shielding film provided as a main body of the scanning line, and the plurality of thin film transistors are electrically connected to the first light-shielding film through contact holes. And a gate electrode formed of a conductive polysilicon film.

According to this structure of the present invention, since the gate electrode is formed of the conductive polysilicon film,
As in the case of forming the gate electrode from the metal film, it is possible to avoid the risk that the semiconductor film, the gate insulating film, the metal film and the like which form the thin film transistor are peeled off due to the stress generated during the high temperature process such as activation annealing. At the same time, the resistance of the scanning line can be reduced by the first light shielding film made of a conductive light shielding film provided as the main body of the scanning line. Moreover, since the plurality of thin film transistors are electrically connected to the first light-shielding film through the contact holes, the thin film transistor is reliably and highly reliable between the gate electrode made of the polysilicon film and the scanning line made of the light-shielding film. An electrical connection state can be realized.

According to the present invention, the light shielding film and the scanning line are
In each of the plurality of thin film transistors, the first
It is characterized in that it includes portions that are opposed to each other with the channel region interposed therebetween via an interlayer insulating film and a gate insulating film and that are electrically connected to each other via a contact hole.

According to the structure of the present invention, on the other hand, in the scanning line, the thin film transistor of the pixel (hereinafter, referred to as the gate electrode portion is arranged so as to face the channel region through the gate insulating film).
"First TFT"). On the other hand, the portion of the light-shielding film provided at the position covering the channel region is the first
Since it is arranged so as to face the channel region through the interlayer insulating film, it serves as a gate electrode portion and constitutes a second TFT. The gate electrode portions of the first and second TFTs are
Since they are connected through the contact holes, a double TFT structure can be obtained for the same channel region.
Therefore, the characteristics of the first TFT, that is, the thin film transistor of the pixel can be improved by using the second TFT as the back channel by the second TFT. still,
By thinning the first interlayer insulating film that is the gate insulating film of the second TFT, the characteristics of the second TFT can be improved.

In the present invention, each of the plurality of scanning lines has a portion functioning as one storage capacitor electrode for imparting a storage capacitor to the pixel electrode connected to the next scanning line via the thin film transistor. It is characterized by including.

According to this structure of the present invention, the storage capacitor is provided to the pixel electrode associated with the next scanning line by the portion of the scanning line which functions as the storage capacitor electrode. More specifically, for example, the semiconductor film on the source or drain side connected to the pixel electrode in the thin film transistor of the pixel related to the scanning line in the next stage is extended to serve as the first storage capacitor electrode. Then, the insulating film extending from the gate insulating film is used as a dielectric film, and the portion functioning as the storage capacitor electrode included in the above scanning line is opposed to the first storage capacitor electrode,
The scanning line in the previous stage can be used as a capacitance line. With such a configuration, the time constant of the scanning line is usually large because the capacitance of the pixel of the next stage is attached to the scanning line, but in the present invention, the time constant of the scanning line is reduced by using the light shielding film. Therefore, even when the scanning line in the previous stage is used as the capacitance line in this way, image deterioration such as vertical crosstalk due to the large time constant of the scanning line as described above can be reduced.

The present invention is characterized by further comprising a capacitance line formed to give a storage capacitance to each of the plurality of pixel electrodes.

According to this structure of the present invention, the storage capacitance is applied to each of the plurality of pixel electrodes by the capacitance line.
More specifically, for example, the semiconductor film on the source or drain side connected to the pixel electrode in the thin film transistor of the pixel is extended to serve as the first storage capacitor electrode. Then, an insulating film extending from the gate insulating film is used as a dielectric film, and a portion of the above-described capacitance line that functions as a storage capacitance electrode is opposed to the first storage capacitance electrode, whereby storage capacitance can be imparted. .

In the present invention, the light-shielding film is electrically insulated from the first light-shielding film provided as at least one of the redundant wiring of the scanning line, the relay wiring and the main body. A second light-shielding film that includes a portion of the light-shielding film that is provided at a position that covers the channel region and that respectively covers the capacitance line when viewed from the one substrate side. The line and the second light-shielding film are connected to a constant potential source.

According to such a configuration of the present invention, since the second light-shielding film is electrically insulated from the first light-shielding film and further connected to the constant potential source, the potential of the first light-shielding film is changed by the potential of the scanning signal. Even if it fluctuates, the potential of the second light shielding film is stable at a constant potential. Since the stable second light-shielding film includes the portion of the light-shielding film provided below the thin film transistor of the pixel, the potential of the portion of the light-shielding film provided below the thin film transistor of the pixel is equal to the scanning line. It is possible to prevent the transistor characteristics of the thin film transistor from deteriorating due to the fluctuation of the potential.
On the other hand, since the capacitance line is also connected to the constant potential source, it can function well as a storage capacitance electrode. Further, since the capacitance line and the second light-shielding film are connected to the constant potential source, it is possible to partially share both wirings leading to the constant potential source. In this case, the constant potential of the constant potential source may be equal to the ground potential, for example.

The present invention is characterized in that the constant potential source is a constant potential source supplied to a peripheral circuit for driving the liquid crystal device.

According to such a configuration of the present invention, the constant potential source is a constant potential source such as a negative power source or a positive power source which is supplied to the peripheral circuits such as the scanning line driving circuit, the data line driving circuit and the counter electrode. Therefore, the light-shielding film and the capacitance line can be made to have a constant potential without providing a special potential wiring or an external input terminal.

The present invention is characterized in that the second light-shielding film is provided as at least one of a redundant wiring, a relay wiring and a main body of the capacitance line.

According to the present invention, the resistance of the capacitance line can be remarkably reduced by the resistance of the conductive light-shielding film. For example, if the capacitance line is formed of the same polysilicon film as the scanning line and the light shielding film is formed of a conductive refractory metal film, the resistance of the capacitance line can be controlled by the sheet resistance of the light shielding film.
That is, the resistance of the capacitance line can be significantly reduced.

As a result, the storage capacitance is added to the plurality of pixel electrodes by the capacitance line having a low resistance and a small time constant.
Even if the drive frequency of the liquid crystal device is increased, the lateral crosstalk (see FIG. 29) due to the potential fluctuation of the capacitance line as described above is reduced, and high-quality image display can be performed. Further, when the capacitance lines are arranged as redundant wirings, even if the capacitance lines are broken in the middle, the second light-shielding film substitutes for the capacitance lines, so that a redundant structure can be realized.

In the present invention, the light-shielding film is electrically insulated from the first light-shielding film provided as at least one of the redundant wiring of the scanning line, the relay wiring, and the main body. A second mesh-like structure that includes a portion of the light-shielding film that is provided at a position that covers the channel region and that covers the capacitance line and the plurality of data lines when viewed from the one substrate side. And a light-shielding film.

According to this structure of the present invention, the second light-shielding film included in the light-shielding film is electrically insulated from the first light-shielding film, so that the potential of the first light-shielding film varies depending on the potential of the scanning signal. However, the potential of the second light shielding film is stable. Since the stable second light-shielding film includes the portion of the light-shielding film provided below the thin film transistor of the pixel,
It is possible to prevent deterioration of the transistor characteristics of the thin film transistor due to the fluctuation of the potential of the light shielding film provided below the thin film transistor of the pixel due to the fluctuation of the potential of the scanning line. Since the second light-shielding film includes a portion of the light-shielding film provided at the position covering the channel region and is provided in a mesh shape, the second light-shielding film can define the opening region of each pixel portion. The resistance of the scanning line can be reduced by the light shielding film.

The present invention is characterized in that the light-shielding film is provided in a striped pattern at positions that respectively cover the plurality of scanning lines when viewed from the side of the one substrate.

According to such a constitution of the present invention, the light shielding film is
Since the plurality of scanning lines are provided in stripes at positions that respectively cover them when viewed from the side of one substrate, the scanning lines and the striped light-shielding film are electrically connected to each other through, for example, a contact hole to shield light. The film can be arranged as a relay wiring or a redundant wiring along the scanning line.

The present invention is characterized in that the light-shielding film is provided in an island shape at a position that at least partially covers the plurality of scanning lines when viewed from the side of the one substrate.

According to such a constitution of the present invention, the light shielding film is
The scanning lines and the island-shaped light-shielding film are electrically connected to each other, for example, through the contact holes, because the scanning lines are provided at positions that at least partially cover the scanning lines from one substrate side. This makes it possible to dispose the light shielding film as a relay wiring or a redundant wiring along the scanning line.

In the present invention, the light shielding film is made of Ti, Cr,
It is characterized by containing at least one of W, Ta, Mo and Pd.

According to such a constitution of the present invention, the light shielding film is
Opaque refractory metals such as Ti, Cr, W, Ta, Mo
And at least one of Pd, and is composed of, for example, a metal simple substance, an alloy, a metal silicide, or the like, and is therefore formed after the light-shielding film formation step on the liquid crystal device substrate.
The high temperature treatment in the forming step can prevent the light shielding film from being broken or melted.

Electronic equipment of the present invention is characterized by including the above liquid crystal device.

According to such a configuration of the present invention, since the electronic apparatus includes the above-described liquid crystal device of the present invention, the redundant structure makes the device highly reliable and reduces display deterioration such as vertical crosstalk. A liquid crystal device that has excellent light-shielding performance against returning light and the like enables high-quality image display.

The operation and other advantages of the present invention will be apparent from the embodiments described below.

[0064]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) The configuration and operation of a first embodiment of a liquid crystal device according to the present invention will be described with reference to FIGS. 1 to 4. FIG. 1 is an equivalent circuit of various elements, wirings, etc. in a plurality of pixels formed in a matrix form an image forming area of a liquid crystal device. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on the liquid crystal device substrate.
2 is a sectional view taken along the line AA ′ of FIG. 2, and FIG.
It is a B'sectional view. In FIGS. 3 and 4, the scales of the layers and members are different so that the layers and members are recognizable in the drawings.

In FIG. 1, a plurality of pixels formed in a matrix form the image display area of the liquid crystal device according to the present embodiment is composed of a pixel electrode 9a and a TFT 30 for controlling the pixel electrode 9a. The data line 6a to which a signal is supplied is electrically connected to the source of the TFT 30. Image signals S1 and S to be written in the data line 6a
2, ..., Sn may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. In addition, the TFT 30
, Is electrically connected to the gate of the scanning line 300a, and is configured to apply the scanning signals G1, G2, ..., Gm to the scanning line 300a in a pulse-sequential order in this order at a predetermined timing. . The pixel electrode 9a is electrically connected to the drain of the TFT 30, and by closing the switch of the TFT 30 for a certain period, the data line 6a is formed.
, Sn are supplied at predetermined timing. Image signals S1, S2, ..., Sn of a predetermined level written in the liquid crystal through the pixel electrode 9a.
Are held for a certain period of time with a counter electrode (described later) formed on a counter substrate (described later). The liquid crystal modulates light by changing the orientation and order of the molecular assembly depending on the applied voltage level, and enables gradation display. Here, in order to prevent the held image signal from leaking,
A storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9 and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time when the source voltage is applied. This allows
The retention characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized. As a method of forming the storage capacitor 70 in this way, the capacitance line 3b which is a wiring for forming the capacitance may be provided, or as described later, the scanning line 3 of the preceding stage.
Capacitors may be formed between the electrodes and 00a (see FIG. 12).

2 to 4, the liquid crystal device substrate 1 is shown.
A plurality of transparent pixel electrodes 9a are arranged in a matrix on 0.
(The outline is shown by a dotted line portion 9a '), and the data line 6a (source electrode), the scanning line 300a (including the gate electrode), and the capacitance line are provided along the vertical and horizontal boundaries of the pixel electrode 9a. 3b is provided. Data line 6a
Is electrically connected to a later-described source region of the semiconductor layer 1a made of a polysilicon film or the like through the contact hole 5, and the pixel electrode 9a is connected to the later-described drain of the semiconductor layer 1a through the contact hole 8. Electrically connected to the area.

In the present embodiment, particularly, the conductive second light-shielding film 11a and the first light-shielding film 11a are provided in the region shown by the diagonal lines rising to the right in the figure.
A light shielding film 11c is provided.

The second light-shielding film 11a is provided in the pixel portion at a position where the channel region of the semiconductor layer 1a (in the figure, the diagonally downward-sloping region in the figure) overlaps when viewed from the liquid crystal device substrate side.

The first light-shielding film 11c is provided separately from the second light-shielding film 11a in the pixel portion, and the second light-shielding film 11a is provided.
Electrically isolated from. The first light-shielding film 11c is provided as a relay wiring for the island-shaped gate electrode 3a made of a polysilicon film that forms the scanning line 300a. That is, each of the island-shaped gate electrodes 3a made of a polysilicon film and divided from each other includes a gate electrode facing a later-described channel region (a diagonally right-downward hatched region in FIG. 2) of the semiconductor layer 1a. Is disposed on the first light-shielding film 1
1c is arranged so as to electrically connect the plurality of gate electrodes 3a connected in the scanning line 300a direction to each other through the contact holes 18. In other words, for each step (row), one scanning line is formed from the plurality of gate electrodes 3a and the plurality of first light-shielding films 11c which are continuous along the direction of the scanning line 300a electrically connected to each other by the contact holes 18. 300a is configured, and a scanning signal can be supplied to each pixel via the one scanning line 300a.

Next, the structure of the pixel portion including the TFT 30 and the gate electrode 3a will be described with further reference to the sectional view taken along the line AA 'in FIG. In FIG. 3, the liquid crystal device substrate 10 is shown.
The counter substrate 20 and the liquid crystal, which are opposed to each other via the liquid crystal, are omitted, and these will be described later.

As shown in the sectional view taken along the line AA 'in FIG. 3, the liquid crystal device includes a liquid crystal device substrate 10 made of a quartz substrate or the like. The liquid crystal device substrate 10 is provided with a pixel electrode 9a made of a transparent conductive thin film such as an ITO film (indium tin oxide film), and on the upper side thereof,
An alignment film 16 made of an organic thin film such as a polyimide thin film that has been subjected to a predetermined alignment process such as a rubbing process is provided.

Each pixel electrode 9a is formed on the liquid crystal device substrate 10.
A pixel switching TFT 30 that controls switching of each pixel electrode 9a is provided at a position adjacent to.

A second light-shielding film 11a is provided between the liquid crystal device substrate 10 and each pixel switching TFT 30 at a position facing the pixel switching TFT 30. As described above, the conductive light-shielding film forming the second light-shielding film 11a and the first light-shielding film 11c is made of an opaque refractory metal and contains at least one of Ti, Cr, W, Ta, Mo, and Pd. It is composed of a simple substance including metal, an alloy, a metal silicide, and the like. With such a material, the high temperature treatment in the process of forming the pixel switching TFT 30 performed after the process of forming the second light shielding film 11a and the first light shielding film 11c on the liquid crystal device substrate 10 causes the second
It is possible to prevent the light shielding film 11a and the first light shielding film 11c from being broken or melted. In addition, such a second light shielding film 11a
As a result, it is possible to prevent the return light or the like from the liquid crystal device substrate 10 side from entering the channel region 1a ′ of the pixel switching TFT 30 and the like, and the characteristics of the pixel switching TFT 30 deteriorate due to the generation of photocurrent. There is no such thing.

Further, the first interlayer insulating film 12 is provided between the second light shielding film 11a and the plurality of pixel switching TFTs 30.
Is provided. The first interlayer insulating film 12 is provided to electrically insulate the semiconductor layer 1a forming the pixel switching TFT 30 from the second light shielding film 11a. Further, the first interlayer insulating film 12 is formed on the substrate 10 for liquid crystal device.
Is formed on the entire surface of the
It also has a function as a base film for the FT 30. That is, the pixel switching TFT 3 is damaged due to roughness during polishing of the surface of the liquid crystal device substrate 10 or stains remaining after cleaning.
It has the function of preventing the deterioration of the characteristics of 0. The first interlayer insulating film 12 is, for example, a highly insulating glass such as NSG (non-doped tomosilicate glass), PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphosilicate glass), or a silicon oxide film. , A silicon nitride film or the like. Due to the first interlayer insulating film 12, the second light-shielding film 11a serves as the pixel switching TFT 3
It is possible to prevent the situation of polluting 0 etc.

In the present embodiment, particularly, the first light shielding film 11c
Are provided as relay wirings for the gate electrode 3a.
That is, as shown in FIG. 3, the gate electrode 3 a and the first light shielding film 11 c are electrically connected via the contact hole 18. Therefore, the resistance of the scanning line 300a (see FIG. 1) can be significantly lowered by the resistance of the first light shielding film 11c.
Since the gate electrode 3a is formed of, for example, a polysilicon film having a sheet resistance value of about 25Ω / □, the diagonal 1.
In the case of a small liquid crystal device having a size of about 3 inches or 0.9 inch, the liquid crystal device has a resistance of about 100 to 200 KΩ, but since the first light-shielding film 11c is formed of the refractory metal film as described above, the scanning is performed. The resistance at line 300a is significantly reduced. For example, if the first light-shielding film 11c is made of tungsten silicide, the sheet resistance value is only about 7 to 8 Ω / □. According to the reduction in resistance, the scanning line 300
The time constant of a can be reduced to, for example, about 1 μs or less. Then, if the scanning lines are driven from both sides of the image display area (not shown), 0.5 μs, which is half that, is further used.
It can be reduced to the following level. Therefore, it can be avoided that the resistance or time constant of the scanning line becomes a constraint when increasing the driving frequency. Further, the second light shielding film 11a and the first light shielding film 11
Since it is insulated from c, the second light-shielding film 11a does not change due to the scanning line 300a. Therefore, it is possible to prevent the transistor characteristics of the thin film transistor from being deteriorated due to the potential change of the scanning line.

Next, referring to the BB 'sectional view of FIG.
The configuration of the pixel portion including the FT 30 and the storage capacitor 70 will be further described. In addition to the liquid crystal device substrate 10, FIG. 4 shows a counter substrate 20 that is arranged to face the liquid crystal device substrate 10 with the liquid crystal 50 interposed therebetween.

As shown in the sectional view taken along the line BB 'of FIG. 4, in the liquid crystal device, the liquid crystal device substrate 10 and the counter substrate 20 which constitutes an example of the other transparent substrate made of glass or quartz are arranged to face each other. Has been done. A counter electrode (common electrode) 21 made of a transparent conductive thin film such as an ITO film is provided over the entire surface of the counter substrate 20, and a predetermined alignment treatment such as a rubbing treatment is performed on the lower side thereof. An alignment film 22 made of an organic thin film such as a polyimide thin film is provided. The counter substrate 20 has a third area in the area other than the opening area of each pixel.
A light shielding film 23 is provided. Therefore, the counter substrate 20
It is possible to prevent incident light from entering from at least the channel region 1a ′ of the semiconductor layer 1a of the pixel switching TFT 30.

A sealing material 52, which will be described later, is provided between the liquid crystal device substrate 10 and the counter substrate 20, which are arranged as described above and are arranged so that the pixel electrode 9a and the counter electrode 21 face each other.
Liquid crystal is enclosed in a space surrounded by (see FIGS. 30 and 31) to form a liquid crystal layer 50.

In this embodiment, in particular, the gate insulating film 2 is extended from the position facing the gate electrode 3a and used as a dielectric film, and the semiconductor layer 1a is extended to form the first storage capacitor electrode 1f.
Further, a storage capacitor 70 is configured by using a part of the capacitance line 3b facing these as a second storage capacitor electrode.

As a result, the space outside the opening region, that is, the region under the data line 6a and the region where the liquid crystal disclination occurs along the gate electrode 3a (that is, the region where the capacitance line 3b is formed) is effective. Can be used to increase the storage capacity of the pixel electrode 9a.

In FIG. 4, a pixel switching TFT
The gate electrode 3 has an LDD (Lightly Doped Drain) structure and constitutes a part of the scanning line 300a.
a, a channel region 1a ′ of the semiconductor layer 1a in which a channel is formed by an electric field from the gate electrode 3a, and the gate electrode 3
a, a gate insulating film 2 for insulating the semiconductor layer 1a from the data line 6a (source electrode), a low-concentration source region (source-side LDD region) 1b and a low-concentration drain region (drain-side LDD region) 1c of the semiconductor layer 1a, The semiconductor layer 1a includes a high-concentration source region 1d and a high-concentration drain region 1e. A plurality of pixel electrodes 9 are formed in the high concentration drain region 1e.
The corresponding one of a is connected. As will be described later, the source regions 1b and 1d and the drain regions 1c and 1e have a predetermined concentration of an n-type or p-type dopant depending on whether an n-type or p-type channel is formed in the semiconductor layer 1a. It is formed by doping. In the present embodiment, especially the data line 6a is composed of a light-shielding thin film such as a metal film such as Al or an alloy film such as metal silicide. Further, on the gate electrode 3a, the gate insulating film 2, and the first interlayer insulating film 12, the contact hole 5 and the high-concentration drain region 1e leading to the high-concentration source region 1d are formed.
A second interlayer insulating film 4 is formed in which contact holes 8 leading to each are formed. The data line 6a is electrically connected to the high concentration source region 1d through the contact hole 5. Further, the data line 6a and the second interlayer insulating film 4
A third interlayer insulating film 7 in which a contact hole 8 to the high-concentration drain region 1e is formed is formed thereover.
The pixel electrode 9a is electrically connected to the high concentration drain region 1e through the contact hole 8 to the high concentration drain region 1e. The above-mentioned pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 7 thus configured.

The pixel switching TFT 30 preferably has the LDD structure as described above, but may have the offset structure in which the impurity ions are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c, or the gate electrode. A self-alignment type TFT in which high-concentration source and drain regions are formed in a self-aligned manner by implanting impurity ions at a high concentration using 3a as a mask may be used.

Further, in the present embodiment, only one gate electrode 3a of the pixel switching TFT 30 is arranged between the source / drain regions 1b and 1e, but there are two or more gate electrodes between them. May be arranged. At this time, the same signal is applied to each gate electrode. As described above, if the TFT is configured with a dual gate (double gate) or a triple gate or more, it is possible to prevent a leak current between the channel and the source / drain region junction portion, and reduce the current at the time of off. If at least one of these gate electrodes has an LDD structure or an offset structure, the off current can be further reduced, and a stable switching element can be obtained.

Here, in general, the polysilicon layers such as the channel region 1a ′, the low concentration source region 1b, and the low concentration drain region 1c of the semiconductor layer 1a are photocurrent due to the photoelectric conversion effect of polysilicon when light is incident. However, since the transistor characteristics of the pixel switching TFT 30 are deteriorated, in the present embodiment, the data line 6a is formed of a light-shielding metal thin film such as Al so as to cover the gate electrode 3a from above. , At least semiconductor layer 1
It is possible to effectively prevent the incident light from entering the channel region 1a ′ and the LDD regions 1b and 1c of a. Further, as described above, below the pixel switching TFT 30,
Since the second light shielding film 11a is provided, at least the channel region 1a ′ of the semiconductor layer 1a and the LDD region 1b,
It is possible to effectively prevent the return light from entering the 1c.

In this embodiment, as shown in FIG. 2, if the second light-shielding film 11a is formed to be larger than the channel region, that is, so as to cover the entire channel region, return light is incident on the channel region. It is even more effective to prevent

(Second Embodiment) A second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a plan view of a plurality of pixel groups adjacent to each other on the liquid crystal device substrate. Incidentally, FIG.
FIG. 6 is a sectional view taken along line CC ′ of FIG. 5. In FIG. 6, in order to make each layer and each member recognizable in the drawing, the scale is different for each layer and each member. Also,
5 and 6, the same components as those of the first embodiment are designated by the same reference numerals, and only the configurations different from those of the first embodiment will be described and the same configurations will be omitted.

As shown in FIGS. 5 and 6, particularly in the second embodiment, the first light-shielding film 11c 'is arranged in stripes along the scanning line direction, and the gate electrode 3a made of a polysilicon film is formed. Are overlaid on the first light-shielding film 11c '. That is, the first light-shielding film 11c ′ is provided as a redundant wiring of the gate electrode 3a, and the first light-shielding film 11c ′ is also provided below the pixel switching TFT. That is, the scanning line 300b is composed of the scanning electrode 3a and the striped first light-shielding film 11.
and c '.

Therefore, the first light-shielding film 1 formed in stripes
It is possible to block the return light to the pixel switching TFT 30 by 1c ′ and reduce the resistance of the scanning line 300b configured by the first light blocking film 11c ′ and the gate electrode 3a by the first light blocking film 11c ′. Therefore, the above-mentioned vertical crosstalk (see FIG. 28) can be prevented. Moreover, since the first light-shielding film 11c ′ has a redundant structure with respect to the gate electrode 3a, even if the gate electrode 3a has a disconnection or a conduction failure, it is possible to prevent the scanning line 300b from becoming defective. Become. As a result, the second embodiment can realize high-quality image display.

As shown in FIG. 5, the first light-shielding film 1
By increasing the width of 1c ′ at the position where it overlaps with the channel region 1a, it is possible to more reliably prevent the returning light to the channel region 1a.

Further, in the second embodiment, the TFT (first TFT) in which the gate electrode 3a is arranged to face the channel region via the gate insulating film, and the first light shield provided at the position covering the channel region. A TFT (second TFT) is formed in which the film 11c ′ is opposed to the channel region via the first interlayer insulating film and serves as a gate electrode, and the gate electrode is formed above and below the channel region. Will be. Therefore, the first TF is reduced by the first light-shielding film 11c '.
By using T as a back channel, it is possible to improve the characteristics of the first TFT, that is, the thin film transistor of the pixel. In addition, the first TFT which is the gate insulating film of the second TFT
By thinning the interlayer insulating film, the characteristics of the second TFT can be improved.

(Third Embodiment) A liquid crystal device according to a third embodiment of the present invention will be described with reference to FIG. Figure 7
FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other on a liquid crystal device substrate. In FIG. 7, the same components as those of the second embodiment shown in FIG. 5 are designated by the same reference numerals, and only the configuration different from that of the second embodiment will be described.

In the third embodiment, the gate electrode 3a 'is the first
Like the light-shielding film 11c ′, the light-shielding film 11c ′ is arranged in stripes along the scanning line direction, and the scanning line 300d is redundantly configured from the gate electrode 3a ′ and the first light-shielding film 11c ′. The other points are the same as in the case of the second embodiment shown in FIG.

As described above, according to the third embodiment, the resistance of the scanning line 300d can be reduced by the first light-shielding film 11c ', so that the vertical crosstalk described above (see FIG. 28).
It is possible to suppress the occurrence of such as, and to realize high-quality image display.
Even if the gate electrode 3a ′ and the first light-shielding film 11c ′ cause disconnection or poor conduction due to the redundant structure in the scanning line 300d, the presence of the other wiring electrically connected to this one through the contact hole 18 Scan line 3
It is also possible to prevent the 00d from becoming defective.

In the third embodiment, each scanning line 300d
Two contact holes 18 are provided for each pixel, but the number may be three or more or one, or may be one for a plurality of pixels. If the number of the contact holes 18 is increased, the degree of the redundant structure between both wirings can be increased and the resistance can be lowered, and if the number of the contact holes 18 is reduced, the process and the structure for forming the contact holes 13 can be simplified. Therefore, the resistance of the scanning line 300d by the first light-shielding film 11c ′ is reduced and the redundancy is increased by setting the number of the contact holes 18 while taking into consideration the sheet resistance, driving frequency, required specifications, etc. Since it is possible to appropriately balance the advantages of the structure and the disadvantages of manufacturing and construction due to opening a large number of contact holes 13, it is very advantageous in practice.

Also in the third embodiment, as in the second embodiment, the first light-shielding film 11c 'can function as the gate electrode of the second TFT, so that it is the same as the case described in the second embodiment. Can be obtained.

(Fourth Embodiment) The fourth embodiment of the liquid crystal device according to the present invention will be described with reference to FIG. Figure 8
FIG. 3 is a plan view of a plurality of pixel groups adjacent to each other on a liquid crystal device substrate. In FIG. 8, the same components as those of the first embodiment shown in FIG. 3 are designated by the same reference numerals, and only the configuration different from that of the first embodiment will be described.

As shown in FIG. 8, in the fourth embodiment, the contact hole 5'opened in the source region and the contact hole 8'opened in the drain region of the pixel switching TFT made of the semiconductor film 501a. The region indicated by the hatched portion in the lower right of the figure is the channel region.
A gate electrode 503a facing the channel region via a gate insulating film is formed of a polysilicon film, and one end of the gate electrode 503a is electrically connected to the first light-shielding film 11c ″ through a contact hole 18 ′. ing. In the present embodiment, in particular, the first light-shielding film 11c ′ is provided as the main body of the scanning line, and the island-shaped second light-shielding film 11a ″ insulated from the first light-shielding film 11c ″ is used as the first light-shielding film. Membrane 11
Simultaneously with c ″, it is formed under the channel region by the same film. In addition, the capacitance line 3b 'is a first scanning line body so as to avoid these two contact holes 8'and 5'.
It is provided along the light shielding film 11c ''.

According to the fourth embodiment of the liquid crystal device having the above structure, since the gate electrode 503a is formed of a conductive polysilicon film, it is possible to form the gate electrode from a metal film. TFT for pixel switching due to stress generated during high temperature process such as activation annealing
It is possible to avoid the risk of peeling of the semiconductor film, the gate insulating film, the metal film, and the like that form the. At the same time, the resistance of the scanning line can be lowered by the first light shielding film 11c ″ provided as the scanning line main body. Moreover, the pixel switching TFT
Is electrically connected to the first light-shielding film 11c ″ through the contact hole 18 ′, the gate electrode 503a made of a polysilicon film and the first light-shielding film 11 made of a light-shielding film.
It is possible to realize a reliable and highly reliable electrical connection state with c ″.

As a result, the resistance of the scanning line composed of the first light-shielding film 11c '' is reduced while the second light-shielding film 11a '' shields the return light to the pixel switching TFTs, and the above-mentioned vertical Crosstalk (see FIG. 28) can be prevented, and high-quality image display can be realized. Furthermore, since the second light-shielding film 11a ″ and the first light-shielding film 11c ″ are insulated from each other, the first light-shielding film 11c ″ that is the scanning line body is formed.
Therefore, the second light shielding film 11a ″ does not change. Therefore, it is possible to prevent the transistor characteristics of the thin film transistor from being deteriorated due to the potential change of the scanning line.

In FIG. 8 of the fourth embodiment, the second light shielding film 11 is used.
Although a ″ is formed in an island shape, it may be formed in a stripe shape and connected to a constant potential source.

In each of the above-described first to fourth embodiments, the prevention of the returning light to the channel region and the reduction of the resistance of the scanning line are realized by the same conductive light shielding film. A modification for further reducing the resistance of the capacitance line using the above-described embodiment will be described.

(First Modification of First Embodiment) A first modification of the first embodiment will be described with reference to FIGS. 9 and 10. 9 is a plan view of a plurality of pixel groups adjacent to each other on the liquid crystal device substrate, and FIG. 10 is a cross-sectional view taken along line DD ′ of FIG. 9. In the first modified example, description of the same configuration as that of the first embodiment will be omitted, and only a different configuration will be described.

In the first modification, the second light-shielding film 11a ′ ″ is used.
Are formed along the capacitance line 3b, and the second light-shielding film 11 is formed.
The a ″ ′ and the capacitance line 3b are electrically connected to a constant potential source. Therefore, the second light-shielding film 11a ′ ″ faces the second light-shielding film 11 with respect to the pixel switching TFT 30.
It is possible to prevent the potential variation of a ″ ′ from having an adverse effect. Further, the capacitance line 3b can function well as the second storage capacitance electrode of the storage capacitance 70. In this case, FIG. 9 and FIG.
As shown by 0, the second light shielding film 11a ′ ″ may be connected to the capacitance line 3b via the contact hole 13 as a low potential source. Alternatively, it may be connected to a constant potential source or the like supplied to a peripheral circuit (for example, a scanning line driving circuit, a data line driving circuit or the like) for driving the liquid crystal device. By using a power source such as a peripheral circuit, it is not necessary to provide a dedicated potential wiring or an external input terminal, and the second light shielding film 11a ′ ″
Also, the capacitance line 3b can be kept at a constant potential. (Not shown) Then, if the second light-shielding film 11a ′ ″ and the capacitance line 3b are electrically connected to each other, for example, at the end of the image display region, and the constant potentials of both are the same, a constant potential is obtained. The wiring from the source to both can be partially shared, and the configuration can be simplified.

As shown in FIGS. 9 and 10, the capacitance line 3b and the second light-shielding film 11a ′ ″ are connected to the contact hole 13.
If the capacitor line 3b is formed of a high resistance polysilicon film, the second light shielding film 11a ′ ″ is connected.
Is formed of a conductive, high-melting-point metal having a low resistance, the resistance of the capacitance line 3b in the direction along the gate electrode 3a is significantly reduced. For example, the second light shielding film 1
When 1a ′ ″ is formed of WSi, the sheet resistance value can be reduced to 1/3 or less as compared with the polysilicon film.

As a result, the time constant of the capacitance line 3b can be reduced to, for example, about ten and several microseconds to several microseconds due to the presence of the second light-shielding film 11a '''. Therefore, the occurrence of lateral crosstalk, ghost, and the like due to the fluctuation of the potential of the capacitance line 3b due to the capacitance coupling with the respective data lines 6a in the capacitance line 3b that is arranged to intersect under the data line 6a is reduced. it can. That is, the problem of display deterioration like the image 802 shown in FIG. 29 does not occur. And, in particular, the liquid crystal device is connected to the XG as described above.
Even if it is configured as a model with a high driving frequency such as A or SXGA, the time constant of the capacitance line 3b is sufficiently small, so that it is possible to reduce the occurrence of lateral crosstalk or ghost.

Therefore, in order to prevent such lateral crosstalk and ghost, it is not necessary to adopt the above-mentioned method of inverting the polarity of the liquid crystal drive voltage for each data line 6a or each pixel, and conversely. , A scan line inversion drive system (so-called 1H inversion), which can reduce the disclination of the liquid crystal layer 50 and is suitable for increasing the pixel aperture ratio, for inverting the liquid crystal drive voltage with respect to the reference voltage for each scan line 300a Drive system) can be adopted. In the first modification, the second
Since the light-shielding film 11a ′ ″ includes a portion of the light-shielding film provided at the position covering the channel region and is provided in a mesh shape along the capacitance line 3b, each pixel is formed by the second light-shielding film 11a ″ ′. The opening area of the portion can be defined, and the resistance of the scanning line can be lowered by the first light shielding film 11c.

(Second Modification of Second Embodiment) A second modification of the second embodiment will be described with reference to FIG. The second modification has the same configuration as the second embodiment, and only the different configuration will be described. The second light shielding film 11d is a pixel switching TF.
It is formed so as to overlap with the capacitance line 3b in the region excluding the lower side of T. In addition, the capacitance line 3b and the second light shielding film 11d
Is the same as in the case of the first modification.
It may be electrically connected via 3, or may be connected to another constant potential source. Thus, in the second modification, the scanning line 3a
Since the first light-shielding film 11c is provided under the capacitor and the second light-shielding film 11d that is insulated from the first light-shielding film 11c is provided below the capacitance line 3b, the resistance of both the scanning line and the capacitance line is reduced. Can be realized. Therefore, as in the case of the first modification, by lowering the resistance of the capacitance line 3b by the second light shielding film 11d, it is possible to prevent the above-mentioned lateral crosstalk (see FIG. 29). Further, since the second light-shielding film 11d and the first light-shielding film 11c are insulated, the second light-shielding film 11d is not affected by the potential fluctuation of the scanning line. As a result, the second modification can realize high-quality image display.

Although not shown, in the third embodiment, the second light-shielding film 11d is formed on the capacitance line 3 as in the second modification.
It is possible to form along b, in which case the second
The same effect as the modification can be obtained.

Also in the fourth embodiment, if the second light-shielding film 11a 'is formed along the capacitance line 3b and further connected to the capacitance line via a contact, both the scanning line and the capacitance line are formed. It is possible to realize low resistance.

(Fifth Embodiment) FIG. 12 is a plan view of a plurality of pixel groups adjacent to each other on a liquid crystal device substrate. Incidentally, FIG.
2, the same components as those of the first embodiment shown in FIG. 2 are designated by the same reference numerals, and only the configuration different from that of the first embodiment will be described.

In FIG. 12, on the liquid crystal device substrate,
A plurality of transparent pixel electrodes 9a in matrix (dotted line portion 9
a) (the outline is indicated by a '), and the data line 6a and the scanning line 300e (including the gate electrode) are provided along the vertical and horizontal boundaries of the pixel electrode 9a.
That is, in the present embodiment, the capacitance line is not provided as in the first to fourth embodiments and the modifications thereof, and the scanning line 300e of the previous stage (n-1th stage) is (nth stage). It is designed to act as a capacitive line (in the eye). More specifically, the second storage capacitor electrode 504 extending from the polysilicon film forming the scanning line 300e in the previous stage and the first storage capacitor electrode 1f ″ extending from the drain region of the pixel switching TFT. But pixel switching TFT
A storage capacitor is formed by being opposed to each other with an insulating film (dielectric film) extended from the gate insulating film.
The data line 6a is electrically connected to the source region of the semiconductor layer 1a made of a polysilicon film via the contact hole 5, and the pixel electrode 9a is connected to the drain region of the semiconductor layer 1a via the contact hole 8 ″. Is electrically connected to.

First light-shielding film 11e made of a conductive light-shielding film
Are arranged in the region shown by the diagonal lines rising to the right in the figure, that is, they are arranged so as to overlap the scanning line 300e. Each scanning line 300e is a channel region of the semiconductor layer 1a (see FIG.
2 is arranged so as to include a gate electrode facing the area of the lower right diagonal line 2), and the first light-shielding film 11e includes the scanning line 300e made of a polysilicon film and the contact hole 1.
A redundant structure is formed by electrically connecting each pixel via 8 ″.

As described above, according to the fifth embodiment, the resistance of the scanning line 300e is lowered and the pixel switching T is made by the first light shielding film 11e made of the refractory metal film.
The return light for the channel region of the FT is shielded. Further, since the gate electrode of the pixel switching TFT is formed of a conductive polysilicon film,
As in the case of forming a gate electrode from a metal film, it is possible to avoid the risk that the semiconductor film, the gate insulating film, the metal film, etc. that form the thin film transistor are peeled off due to the stress generated during a high temperature process such as activation annealing, and the reliability is high The liquid crystal device can be manufactured.

Further, in the fifth embodiment, the first light shielding film 11
e is the data line 6 from the portion overlapped with the scanning line 300e.
You may make it include the 3rd storage capacitor electrode 11e 'extended along a. In that case, the storage capacitance can be increased by the third storage capacitance electrode 11e ′ and the first storage capacitance electrode 1f ″ which are arranged to face each other with the first interlayer insulating film interposed therebetween. The portion of the switching TFT facing the channel region may be formed wide.
In that case, it is possible to reliably block the return light in the channel region shown by the oblique line in the lower right of FIG.

(Structure of Peripheral Circuit of Liquid Crystal Device) By using the above-described embodiments and their modifications, the substrate 10 for liquid crystal device is used.
A structure in which a peripheral circuit is formed thereover will be described with reference to FIG. In FIG. 13, the liquid crystal device serves as a peripheral circuit, which is a data line driving circuit 101 for driving the data line 6a.
And a scanning line driving circuit 104 for driving the scanning line 300a
, The precharge circuit 201 which supplies the precharge signal NRS of a predetermined voltage level to the plurality of data lines 6a prior to the supply of the image signals S1, S2, ... Sn, and the image signals S1, S2 ,. And a sampling circuit 301 which supplies the data to each of the plurality of data lines 6a.

The scanning line driving circuit 104 has the scanning line 300a at a predetermined timing based on the power source supplied from the external control circuit, the reference clock CLY, its inverted clock, and the like.
, Gm are applied line-sequentially in a pulsed manner.

In the data line driving circuit 101, the timing at which the scanning line driving circuit 104 applies the scanning signals G1, G2, ..., Gm based on the power source supplied from the external control circuit, the reference clock CLX, its inverted clock, and the like. Then, an image signal is supplied to the data line 35.

The precharge circuit 201 has, for example, a TFT 202 as a switching element for each data line 6a, and the precharge signal line 204 has a TFT 202.
Of the TFT 202, and the precharge circuit drive signal line 206 is connected to the gate electrode of the TFT 202. Then, at the time of operation, a power supply of a predetermined voltage required for writing the precharge signal NRS is supplied from an external power supply via the precharge signal line 204, and each data line 6a is supplied via the precharge circuit drive signal line 206. Regarding the image signals S1, S2, ..., Sn, the precharge circuit driving signal N is written from the external control circuit so that the precharge signal NRS is written at a timing preceding the image signals S1, S2 ,.
RG is supplied. The precharge circuit 201 preferably supplies a precharge signal NRS (image auxiliary signal) corresponding to the image signals S1, S2, ..., Sn of the intermediate gradation level.

The sampling circuit 301 is a TFT 302.
Is provided for each data line 6a, the image signal line 304 is connected to the source electrode of the TFT 302, and the sampling circuit drive signal line 306 is connected to the gate electrode of the TFT 302. When the image signals S1, S2, ..., Sn are input via the image signal line 304, these are sampled. That is, when the sampling circuit drive signals SH1, SH2, ..., SHn are input from the data line drive circuit 101 via the sampling circuit drive signal line 306, the image signal S supplied to the image signal line 304.
, Sn, ..., Sn are sequentially applied to the data line 6a.

As described above, in this embodiment, the data line 6
Although a is selected for each line, as described above, the data lines 6a may be supplied for each group for a plurality of lines.

Precharge performed in the liquid crystal device of this embodiment will be described with reference to FIG.

As shown in FIG. 14, the data line driving circuit 1
The shift register included in 01 has a clock signal (CL) that defines the selection time t1 (dot frequency) per pixel.
X) is input as a horizontal scanning reference, but when a transfer start signal (DX) is input, transfer signals X1, X2, ... Are sequentially supplied from this shift register. In each horizontal scanning period, such a transfer start signal (DX)
The precharge circuit drive signal (NRG) is supplied to the precharge circuit 201 at a timing preceding the input of. More specifically, the clock signal (CLY), which is the reference for vertical scanning, becomes high level and the image signal (V
After the polarity of (ID) is inverted with reference to the voltage center value (VID center) of the signal, the precharge circuit drive signal (NRG) is set to the high level after a lapse of time t3 which is a margin from this polarity inversion to precharge. It is said that On the other hand, the precharge signal (NRS) is the image signal (VI
Corresponding to the inversion of D), the image signal (VI
The predetermined level has the same polarity as that of D). Therefore, precharge is performed at time t2 when the precharge circuit drive signal (NRG) is at high level. Then, before the time point when the horizontal blanking period ends and the effective display period starts, time t4, that is, the margin from the end of the precharge to the writing of the image signal (VID) is set as the time t4. The charge circuit drive signal (NRG) is
Low level. As described above, the precharge circuit 201 supplies the precharge signal (NRS) to the plurality of data lines 6a prior to the supply of the image signal in each horizontal blanking period.

In the present embodiment and the modified example, the resistance and the time constant of the scanning line 300a are reduced by the first light-shielding film 11c (11c ', 11c'', 11e) as described above. It is particularly advantageous when charging is performed to increase the driving frequency.

That is, in FIG. 14, the precharge is carried out within the horizontal blanking period, but the voltage applied to the gate of the pixel switching TFT by the preceding scanning line 300a is stabilized at the off potential within the time t3. There is a need to. That is, the precharge related to the scanning line in the nth stage is
It must be performed after the gate of the (n-1) th stage is turned off by the scanning line of the stage. Therefore, if the timing of each signal is set so that the time t3 becomes longer, the scanning line 300
It is considered that the time constant of a may be large. However, if this time t3 is taken longer, then this time t
The need arises to shorten 5, t2, t4. Here, the fluctuation of the potential of the capacitance line 3b due to the capacitance coupling between the data line 6a and the capacitance line 3b described above becomes stable within the time t5. Therefore, if the time t5 is too short, the capacitance line 3
The fluctuation of the potential of b causes the horizontal crosstalk and the like described with reference to FIG. Further, if the time t2 is shortened, the precharge capability is lowered or a precharge circuit having a high charge supply capability is required. Furthermore, if the time t4 is shortened, the precharge signal and the image signal may be simultaneously applied to the data line 6a. Therefore, in order to favorably perform the precharge, it is not possible to easily lengthen the time t3 during which the potential of the scanning line 300a in the preceding stage stabilizes at the off potential. However, according to the present embodiment, the resistance of the scanning line 300a is greatly reduced and the time constant is significantly reduced by the first light-shielding film 11c, so that the time for the potential of the preceding scanning line 300a to stabilize at the off potential is also large. Is shortened to. Therefore, the n-th
The pre-charge of the n-th stage is performed before the gate of the first stage is turned off, and the pre-charge potential in the scan line 300a of the n-th stage is added to the potential of the image signal of the (n-1) -th stage. You will not be drawn. As a result, even if the driving frequency of the liquid crystal device is increased and precharge is performed, the vertical crosstalk as described above (see FIG. 28) is reduced and high-quality image display can be performed.

(Manufacturing Process of Liquid Crystal Device) Next, as a manufacturing process of the liquid crystal device having the above-described structure, a first modified example will be described with reference to FIGS. 15 to 18 and 19 to 22.
Will be described with reference to. 15 to 18 are process diagrams shown corresponding to the DD ′ cross section of the liquid crystal device substrate of FIG. 9, and FIGS. 19 to 22 are EE of the liquid crystal device substrate of FIG. 9. 'It is a process drawing shown corresponding to a cross section.

Further, in the manufacturing processes of the first to fourth embodiments of the liquid crystal device described above, the contact hole 13 in the step (13) is not opened as compared with the manufacturing process of the first modification (see FIG. 15)) and a light-shielding film is not provided below the capacitance line 3b, and the other steps are the same, so description thereof will be omitted.

As shown in (1) of the process of FIGS. 15 and 19, the substrate 10 for a liquid crystal device such as a quartz substrate or hard glass is placed in an atmosphere of an inert gas such as N ₂ (nitrogen) and about 900.
Annealing is performed at a high temperature of ˜1300 ° C., and pretreatment is performed so as to reduce strain generated in the liquid crystal device substrate 10 in a high temperature process performed later. That is, the liquid crystal device substrate 10 is preliminarily heat-treated at the same temperature or higher in accordance with the highest temperature of the manufacturing process.

The liquid crystal device substrate 10 thus processed
A metal alloy film such as a metal such as Ti, Cr, W, Ta, Mo, and Pd or a metal silicide such as a metal silicide is sputtered on the entire surface of the substrate by sputtering to have a layer thickness of about 1000 to 5000 angstroms.
Preferably, the light shielding film 11 having a layer thickness of about 2000 angstrom is formed.

Subsequently, in step (2) of FIG. 15 and FIG.
As shown in FIGS. 1A and 1B, by patterning the formed light shielding film 11, the first light shielding film 11c and the second light shielding film 11a ″ ′ are formed.

Next, as shown in step (3) of FIGS. 15 and 19, respectively, the first light-shielding film 11c and the second light-shielding film 11 are formed.
A first interlayer insulating film 12 made of a silicate glass film such as NSG, PSG, BSG, BPSG, a silicon nitride film, a silicon oxide film, or the like is formed on a '''. This first
The layer thickness of the interlayer insulating film 12 is, for example, about 5000 to 200.
00 angstrom.

Next, as shown in the step (4) of FIGS. 15 and 19, respectively, about 450 to 5 are formed on the first interlayer insulating film 12.
In a relatively low temperature environment of 50 ° C, preferably about 500 ° C,
Monosilane gas with a flow rate of about 400 to 600 cc / min,
Low-pressure CVD using disilane gas (for example, pressure of about 2
An amorphous silicon film is formed by CVD of 0 to 40 Pa). Then, in a nitrogen atmosphere, about 600-7
The polysilicon film 1 is annealed at 00 ° C. for about 1 to 10 hours, preferably 4 to 6 hours until the polysilicon film 1 has a thickness of about 500 to 2000 angstroms, preferably about 1000 angstroms. Solid phase growth.

At this time, as the pixel switching TFT 30 shown in FIG. 10, the polysilicon film 1 may be directly formed by the low pressure CVD method without passing through the amorphous silicon film. Alternatively, the polysilicon film 1 may be formed by implanting silicon ions into a polysilicon film deposited by the low pressure CVD method to once make it amorphous and then recrystallizing it by annealing or the like.

Next, as shown in the step (5) of FIGS. 15 and 19, the semiconductor layer 1a including the channel region 1a 'having a predetermined pattern as shown in FIG. 7 is formed. That is, particularly in the region where the capacitance line 3b is formed under the data line 6a and the region where the capacitance line 3b is formed along the gate electrode 3a,
Semiconductor layer 1a constituting the pixel switching TFT 30
A first storage capacitor electrode (semiconductor layer) 1f extended from is formed.

Next, as shown in the step (6) of FIG. 15 and FIG. 19, the first storage capacitor electrode 1f together with the semiconductor layer 1a constituting the pixel switching TFT 30 is set to about 900-.
By thermal oxidation at a temperature of 1300 ° C., preferably about 1000 ° C., a thermally oxidized silicon film having a relatively thin thickness of about 300 Å is formed, and a high temperature silicon oxide film (HTO film) is further formed by a low pressure CVD method or the like. ) Or silicon nitride film is deposited to a relatively thin thickness of about 500 angstroms, and has a multilayer structure for pixel switching TF.
The insulating film 2 for forming a capacitor is formed together with the gate insulating film 2 of T30. As a result, the thickness of the first storage capacitor electrode 1f is
The thickness of the gate insulating film 2 is about 300 to 1500 angstroms, preferably about 350 to 500 angstroms, and the thickness of the gate insulating film 2 is about 200 to 1500 angstroms, preferably about 300 to 1000 angstroms. .

Although not particularly limited in the step (6) of FIG. 15, for example, phosphorus (P) ions are dosed in the semiconductor layer portion to be the first storage capacitor electrode 1f at a dose amount of about 3 × 10.
^It may be doped with ¹² / cm ² to reduce the resistance.

Next, as shown in the step (7) of FIG. 15 and FIG. 19, the second light-shielding wiring 11 is formed on the first interlayer insulating film 12.
A contact hole 13 reaching a and a contact hole 18 reaching the first light shielding film 11c are formed. At this time, the contact holes 13 and 18 are formed by anisotropic etching such as reactive etching or reactive ion beam etching.
There is an advantage that the shape of the opening can be made substantially the same as the shape of the mask by opening the holes. However, by combining dry etching and wet etching to open the holes, these contact holes 13 and 18 and the like can be tapered, so that there is an advantage that disconnection at the time of wiring connection can be prevented.

Next, as shown in step (8) of FIGS. 15 and 19, after depositing the polysilicon layer 3, phosphorus (P) is thermally diffused to render the polysilicon film 3 conductive. Alternatively, a doped silicon film in which P ions are introduced simultaneously with the formation of the polysilicon film 3 may be used.

Next, as shown in step (9) of FIG. 16 and FIG. 20, respectively, the capacitance line 3b is formed together with the gate electrode 3a having the predetermined pattern as shown in FIG. The film thickness of each of the gate electrode 3a and the capacitance line 3b is about 35, for example.
It is set to 00 angstrom.

Next, as shown in step (10) of FIGS. 16 and 20, respectively, the pixel switching TF shown in FIG.
When T30 is an n-channel TFT having an LDD structure, P (phosphorus) is used by using the gate electrode 3a as a diffusion mask in order to first form the low-concentration source region 1b and the low-concentration drain region 1c in the semiconductor layer 1a. Group V element dopant 60, such as
Dope (with a dose of × 10 ¹³ / cm ² ). As a result, the semiconductor layer 1a below the gate electrode 3a becomes the channel region 1a '. By doping this impurity, the resistance of the capacitance line 3b and the gate electrode 3a is also lowered.

Then, step (11) in FIGS. 16 and 20.
As shown in FIG. 1, the high-concentration source region 1b and the high-concentration drain region 1 which form the pixel switching TFT 30 are shown.
In order to form c, a resist layer 62 is formed on the gate electrode 3a with a mask wider than the gate electrode 3a, and then a dopant 61 of a group V element such as P is also highly concentrated (for example, P ion Dope (with a dose of 1-3 × 10 ¹⁵ / cm ² ). Note that, for example, a TFT having an offset structure may be used without performing low-concentration doping, or a self-aligned TFT may be formed by an ion implantation technique using P ions or the like using the gate electrode 3a as a mask.

The resistance of the capacitance line 3b and the gate electrode 3a is further reduced by doping the impurities. Also, step (10)
By repeating the step (11) and the step (11) again to perform doping with a Group III element such as B (boron) ions, a p-channel TFT can be formed. This allows
It becomes possible to form the data line driving circuit 101 and the scanning line driving circuit 104 having a complementary structure composed of the n-channel type TFT and the p-channel type TFT in the peripheral portion on the liquid crystal device substrate 10. As described above, in this embodiment, since the semiconductor layer of the pixel switching TFT 30 is made of polysilicon, the pixel switching TF is used.
The data line driving circuit 1 is formed in almost the same process when T30 is formed.
01 and the scan line driver circuit 104 can be formed,
It is advantageous in manufacturing.

Next, as shown in step (12) of FIG. 16 and FIG. 20, NSG, PSG, BSG, BPSG, etc. are formed so as to cover the capacitance line 3b and the gate electrode 3a together with the gate electrode 3a in the pixel switching TFT 30. A second interlayer insulating film 4 made of a silicate glass film, a silicon nitride film, a silicon oxide film or the like is formed. The layer thickness of the second interlayer insulating film 4 is preferably about 5000 to 15000 angstroms.

Next, as shown in step (13) of FIG. 16, respectively, the high concentration source region 1d and the high concentration drain region 1e are formed.
Anneal treatment at about 1000 ° C. to activate
After about a minute, the contact hole 5 for the data line 31 is formed. In addition, contact holes for connecting the gate electrode 3a and the capacitance line 3b to a wiring not shown are also provided.
The second interlayer insulating film 4 is opened by the same process as the contact hole 5.

Next, as shown in the step (14) of FIGS. 17 and 21, respectively, a light-shielding Al is formed on the second interlayer insulating film 4.
As a metal film 6, a low resistance metal such as
Deposition to a thickness of about 1000-5000 Angstroms, preferably about 3000 Angstroms.
Then, as shown in the step (15) of FIG. 20, the data line 6a is formed.

Next, as shown in step (16) of FIG. 17 and FIG. 21, for example, a silicate glass film such as NSG, PSG, BSG, BPSG or the like, a nitride film so as to cover the data line 6a (source electrode). A third interlayer insulating film 7 made of a silicon film, a silicon oxide film or the like is formed. The layer thickness of the third interlayer insulating film 7 is preferably about 5000 to 15000 angstroms.

Next, as shown in step (17) of FIG.
In the pixel switching TFT 30, the pixel electrode 9a
A contact hole 8 for electrically connecting the high-concentration drain region 1e with the high-concentration drain region 1e is formed.

Next, as shown in step (18) of FIGS. 17 and 21, a transparent conductive thin film 9 such as an ITO film is formed on the third interlayer insulating film 7 to a thickness of about 500 to 2000 angstroms. 16 and FIG. 20 step (1
As shown in 9), the pixel electrode 9a is formed. still,
When the liquid crystal device is used for a reflective liquid crystal device, A
The pixel electrode 9a may be formed of an opaque material having a high reflectance such as l.

Subsequently, the alignment film 16 (see FIG. 10) is formed by applying a polyimide-based alignment film coating liquid on the pixel electrodes 9a and then performing a rubbing process.

On the other hand, regarding the counter substrate 20 shown in FIG. 10, a glass substrate or the like is first prepared, and the third light-shielding film 23 formed for each pixel, and the image display area and the outside of the image display area as described later. A fourth light-shielding film (see FIGS. 22 and 23) as a peripheral partition for partitioning and is patterned after sputtering metal chromium, for example. The third light-shielding film 23 and the fourth light-shielding film 53 may be formed of a metal material such as Cr, Ni, or Al, or a material such as resin black in which carbon or Ti is dispersed in a photoresist.

Thereafter, a transparent conductive thin film such as ITO is deposited on the entire surface of the counter substrate 20 to a thickness of about 500 to 2000 angstroms to form the counter electrode 21. Furthermore, an alignment film 22 (see FIG. 10) is formed on the counter electrode 21.
Is formed.

Finally, the liquid crystal device substrate 10 and the counter substrate 20 on which the respective layers are formed as described above are attached by a sealing material so that the alignment films 16 and 22 (see FIG. 10) face each other, and vacuum suction is performed. As a result, liquid crystals formed by mixing a plurality of types of nematic liquid crystals are sucked into the space between the substrates to form a liquid crystal layer 50 having a predetermined layer thickness.

As described above, the first part of the liquid crystal device shown in FIG.
A variant is manufactured.

(Overall Configuration of Liquid Crystal Device) The overall configuration of each embodiment of the liquid crystal device configured as described above will be described with reference to FIGS. 23 and 24. 23 is a plan view of the liquid crystal device substrate 10 together with the components formed thereon as viewed from the counter substrate 20 side, and FIG. 24 is a plan view of FIG. 23 including the counter substrate 20. It is a H-H sectional view.

In FIG. 23, a sealing material 52 is provided on the liquid crystal device substrate 10 along the edge thereof,
As described above, the fourth light-shielding film 53 having a light-shielding property and made of the same material as the third light-shielding film 23 or made of a material different from that of the third light-shielding film 23 is provided in parallel with the inside thereof. In a region outside the sealing material 52, a data line driving circuit 101 and a mounting terminal 102 are provided along one side of the liquid crystal device substrate 10, and a scanning line driving circuit 104 is provided on two sides adjacent to this side. It is provided along. It goes without saying that the scanning line driving circuit 104 may be provided on only one side if the delay of the scanning signal supplied to the gate electrode 3a does not matter. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area. For example, the odd-numbered data lines 6a supply an image signal from a data line driving circuit arranged along one side of the image display area, and the even-numbered data lines 6a extend along the opposite side of the image display area. The image signal may be supplied from the data line driving circuit arranged as described above. By thus driving the data lines 6a in a comb shape, the occupied area of the data line driving circuit can be expanded, and a complicated circuit can be configured. Further, a plurality of wirings 105 for connecting the scanning line drive circuits 104 provided on both sides of the image display area are provided on the remaining one side of the liquid crystal device substrate 10. In addition, at least one position of the corner portion of the counter substrate 20 is provided with a conductive material 106 for establishing electrical conduction between the liquid crystal device substrate 10 and the counter substrate 20. Then, as shown in FIG. 24, the sealing material 52 shown in FIG.
The counter substrate 20 having substantially the same contour as
Is fixed to the liquid crystal device substrate 10.

Since the liquid crystal device according to each of the embodiments described above is applied to a color liquid crystal projector, three liquid crystal devices are used as light valves for RGB, and each panel has RGB color separation. The light of each color separated through the dichroic mirror is incident as projection light. Therefore, in each of the embodiments, the counter substrate 20 is not provided with a color filter. However, an RGB color filter may be formed on the counter substrate 20 in a predetermined area facing the pixel electrode 9a where the third light-shielding film 23 is not formed, together with its protective film.
With this configuration, the liquid crystal device according to each embodiment can be applied to a color liquid crystal device such as a direct-view type or a reflection type color liquid crystal television other than the liquid crystal projector. Further, microlenses may be formed on the counter substrate 20 so as to correspond to each pixel. By doing so, a bright liquid crystal device can be realized by improving the efficiency of collecting incident light. Furthermore, a dichroic filter that creates RGB colors may be formed by utilizing interference of light by depositing a number of interference layers having different refractive indexes on the counter substrate 20. This counter substrate with a dichroic filter can realize a brighter color liquid crystal device.

In the liquid crystal device in each of the embodiments described above, the incident light is made incident from the counter substrate 20 side as in the conventional case, but since the light shielding film is provided below the pixel switching TFT, The incident light may be incident from the liquid crystal device substrate 10 side and emitted from the counter substrate 20 side. That is, even if the liquid crystal device is attached to the liquid crystal projector as described above, the channel region 1 of the semiconductor layer 1a is
It is possible to prevent light from entering the a ′ and the LDD regions 1b and 1c, and it is possible to display a high quality image. Here, conventionally, in order to prevent reflection on the back surface side of the liquid crystal device substrate 10, it is necessary to separately dispose a polarizing plate coated with an AR film for antireflection or to attach an AR film. However, in each of the embodiments, at least the channel region 1 of the surface of the liquid crystal device substrate 10 and the semiconductor layer 1a.
Since a light-shielding film is formed between a ′ and the LDD regions 1b and 1c, such an AR-coated polarizing plate or AR is used.
A film is used, or the liquid crystal device substrate 10 itself is
There is no need to use R-treated substrates. Therefore, according to each embodiment, the material cost can be reduced, and the yield is not lowered due to dust, scratches, etc. when the polarizing plate is attached, which is very advantageous. Further, since the light resistance is excellent, even if the light utilization efficiency is improved by using a bright light source or polarization conversion by the polarization beam splitter, image deterioration such as crosstalk due to light does not occur.

(Electronic Device) Next, an electronic device embodiment including the liquid crystal device according to each of the above-described embodiments will be described with reference to FIGS. 25 to 27.

First, FIG. 25 shows a schematic configuration of an electronic apparatus equipped with a liquid crystal device 100 having the same configuration as the liquid crystal device according to each of the above-described embodiments.

In FIG. 25, the electronic equipment includes a display information output source 1000, a display information processing circuit 1002, and a drive circuit 1.
004, a liquid crystal device 100, a clock generation circuit 1008, and a power supply circuit 1010. The display information output source 1000 is a ROM (Read Only Memory), R
An AM (Random Access Memory), a memory such as an optical disk device, a tuning circuit that tunes and outputs an image signal, and the like are included, and display information such as an image signal of a predetermined format is displayed based on a clock signal from a clock generation circuit 1008. It is output to the information processing circuit 1002. The display information processing circuit 1002 is configured to include various known processing circuits such as an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, and a clamp circuit, and a display input based on a clock signal. Digital signals are sequentially generated from the information and output to the drive circuit 1004 together with the clock signal CLK. The drive circuit 1004 drives the liquid crystal device 100. The power supply circuit 1010 supplies a predetermined power supply to each of the above circuits. The drive circuit 1004 may be mounted on the liquid crystal device substrate that constitutes the liquid crystal device 100, or in addition to this, the display information processing circuit 1002 may be mounted.

Next, FIG. 26 and FIG. 27 show specific examples of the electronic apparatus configured as described above.

In FIG. 26, a liquid crystal projector 1100, which is an example of an electronic apparatus, prepares three liquid crystal modules including the liquid crystal device 100 in which the drive circuit 1004 described above is mounted on a liquid crystal device substrate, and lights for RGB respectively. It is configured as a projector used as the valves 100R, 100G, and 100B. Liquid crystal projector 110
At 0, when the projection light is emitted from the lamp unit 1102 of the white light source such as the metal halide lamp, the three mirrors 1106 and the two dichroic mirrors 1108 convert the light components R, G, and B corresponding to the three primary colors of RGB. Light valves 100R and 10 corresponding to each color
0G and 100B respectively. At this time, especially B light,
In order to prevent light loss due to a long optical path, the incident lens 112
2 is guided through a relay lens system 1121 including a relay lens 1123 and an emission lens 1124. Then, the light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B are combined again by the dichroic prism 1112 and then projected as a color image on the screen 1120 via the projection lens 1114.

In this embodiment, in particular, since the light shielding film is also provided on the lower side of the TFT, the reflected light and the projected light by the projection optical system in the liquid crystal projector based on the projected light from the liquid crystal device 100 pass through. Reflected light from the surface of the liquid crystal device substrate at the time of performing, part of projection light that passes through the dichroic prism 1112 after being emitted from another liquid crystal device, and the like enters from the liquid crystal device substrate side as return light. Also, it is possible to sufficiently shield the channel region such as the switching TFT of the pixel electrode from light. For this reason,
Even if a prism suitable for miniaturization is used in the projection optical system, AR (Anti-Reflection) for preventing return light is provided between the liquid crystal device substrate of each liquid crystal device and the prism.
It is not necessary to attach a film or to apply an AR coating treatment to the polarizing plate, which is very advantageous in reducing the size and simplifying the structure.

Further, in the present embodiment, since the return light to the channel region can be prevented by the light-shielding film, the polarizing plate subjected to the returning light prevention treatment is not directly attached to the liquid crystal device, and the polarizing plate is removed from the liquid crystal device. They may be formed separately.
More specifically, one polarizing plate (not shown) can be attached to the dichroic prism 1112. By thus attaching the polarizing plate to the prism unit, the heat of the polarizing plate is absorbed by the prism unit or the lens, so that the temperature rise of the liquid crystal device can be prevented. Further, in the case of such a configuration, since the liquid crystal device and the polarizing plate can be formed separately from each other, an air layer is formed between the liquid crystal device and the polarizing plate. Therefore, a cooling means (not shown) is provided on one of the upper side and the lower side of the prism unit, and the temperature of the liquid crystal device is further prevented from being blown by blowing cool air or the like between the liquid crystal device and the polarizing means from the cooling means. Therefore, it is possible to prevent malfunction due to temperature rise of the liquid crystal device.

In FIG. 27, a laptop personal computer (PC) 1200 for multimedia, which is another example of electronic equipment, is provided with the liquid crystal device 100 described above in a top cover case, and further includes a CPU,
A keyboard 1202 as well as a memory, a modem, etc.
A main body 1204 in which

In addition to the electronic devices described with reference to FIGS. 26 and 27, liquid crystal televisions, viewfinder type or monitor direct-view type video tape recorders, car navigation devices, electronic notebooks, calculators, word processors, engineering A workstation (EWS), a mobile phone, a videophone, a POS terminal, a device equipped with a touch panel, and the like are examples of the electronic device shown in FIG.

As described above, according to the present embodiment, the reliability is high and the display deterioration such as vertical crosstalk (see FIG. 28), horizontal crosstalk, ghost, etc. (see FIG. 29) is reduced. In addition, various electronic devices capable of displaying high-quality images can be realized by the liquid crystal device having an excellent light-shielding performance against return light and the like.

[Brief description of drawings]

FIG. 1 is an equivalent circuit of various elements, wirings, etc. provided in a plurality of matrix-shaped pixels forming an image forming area in the first embodiment.

FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other according to the first embodiment.

3 is a cross-sectional view taken along the line A-A ′ of FIG.

FIG. 4 is a sectional view taken along the line B-B ′ of FIG.

FIG. 5 is a plan view of a plurality of pixel groups adjacent to each other according to the second embodiment.

6 is a cross-sectional view taken along the line C-C ′ of FIG.

FIG. 7 is a plan view of a plurality of pixel groups adjacent to each other according to the third embodiment.

FIG. 8 is a plan view of a plurality of pixel groups adjacent to each other according to the fourth embodiment.

FIG. 9 is a plan view of a plurality of pixel groups adjacent to each other in a first modified example of the first embodiment.

10 is a cross-sectional view taken along the line D-D ′ of FIG. 9.

FIG. 11 is a plan view of a plurality of pixel groups adjacent to each other in a second modified example of the second embodiment.

FIG. 12 is a plan view of a plurality of pixel groups adjacent to each other according to a fifth embodiment.

FIG. 13 is a block diagram showing peripheral circuits on a liquid crystal device substrate in an embodiment of a liquid crystal device.

FIG. 14 is a timing chart of various signals related to precharge.

FIG. 15 is a process diagram (1) sequentially showing the manufacturing process of the first modified example of the first embodiment of the liquid crystal device with respect to the DD ′ cross-sectional portion of FIG. 9.

FIG. 16 is a process diagram (part 2) sequentially showing the manufacturing process of the first modification of the first embodiment of the liquid crystal device with respect to the cross section taken along line DD ′ of FIG. 9.

FIG. 17 is a process diagram (No. 3) sequentially showing the manufacturing process of the first modification of the first embodiment of the liquid crystal device with respect to the DD ′ cross-sectional portion of FIG. 9.

FIG. 18 is a process diagram (No. 4) sequentially showing the manufacturing process of the first modification example of the first embodiment of the liquid crystal device with respect to the cross section taken along line DD ′ of FIG. 9.

FIG. 19 is a process diagram (1) sequentially showing the manufacturing process of the first modification of the first embodiment of the liquid crystal device with respect to the cross section taken along the line EE ′ of FIG. 9.

FIG. 20 is a process diagram (part 2) sequentially showing the manufacturing process of the first modification of the first embodiment of the liquid crystal device with respect to the cross section taken along the line EE ′ of FIG. 9.

FIG. 21 is a process diagram (part 3) sequentially showing the manufacturing process of the first modification of the first embodiment of the liquid crystal device with respect to the cross section taken along the line EE ′ of FIG. 9.

22A and 22B are process diagrams (No. 4) sequentially showing the manufacturing process of the first modification example of the liquid crystal device according to the first embodiment of the cross section along the line EE ′ of FIG. 9.

FIG. 23 is a plan view of the liquid crystal device substrate in each of the embodiments of the liquid crystal device, together with the respective components formed thereon, as viewed from the counter substrate side.

FIG. 24 is a cross-sectional view taken along the line H-H ′ of FIG. 22.

FIG. 25 is a block diagram showing a schematic configuration of an electronic device embodiment according to the present invention.

FIG. 26 is a cross-sectional view showing a liquid crystal projector as an example of an electronic device.

FIG. 27 is a front view showing a personal computer as another example of the electronic apparatus.

FIG. 28 is a conceptual diagram for explaining display deterioration due to vertical crosstalk.

FIG. 29 is a conceptual diagram for explaining display deterioration due to horizontal crosstalk.

[Explanation of symbols]

1a ... Semiconductor layer 1a '... Channel region 1b ... Low concentration source region (source side LDD region) 1c ... Low concentration drain region (drain side LDD region) 1d ... High concentration source region 1e ... High concentration drain region 1f-1f "... First storage capacitor electrode 2 ... Gate insulating film 3a ... Gate electrodes 3b, 3b '... Capacitance line (second storage capacitor electrode) 4 ... Second interlayer insulating film 5 ... Contact hole 6a ... Data line (source electrode) 6b ... Potential line 7 ... Third interlayer insulating films 8 to 8 "... Contact hole 9a ... Pixel electrode 10 ... Liquid crystal device substrates 11a, 11a ', 11a", 11a "', 11d ... Second
Light-shielding films 11c, 11c ', 11c'', 11e ... First light-shielding film 12 ... First interlayer insulating film 13 ... Contact hole 18 ... Contact hole 20 ... Counter substrate 21 ... Counter electrode 23 ... Third light-shielding film 30 ... TFT 50 ... liquid crystal layer 52 ... sealing material 53 ... fourth light-shielding film 70 ... storage capacitor 101 ... data line drive circuit 104 ... scan line drive circuit 201 ... precharge circuit 301 ... sampling circuits 300a to 300e ... scan line 501 ... semiconductor film 503a ... Gate electrode 504 ... Second storage capacitor electrode

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 2H092 JA25 JA28 JA37 JA41 JB22                       JB54 JB61 JB64 JB65 JB68                       NA22                 5F110 AA02 AA03 BB02 BB04 CC02                       DD02 DD03 DD11 DD12 DD13                       DD14 DD25 EE09 EE28 FF02                       FF03 FF09 FF23 FF32 GG02                       GG12 GG13 GG24 GG25 GG47                       HJ01 HJ13 HJ23 HL03 HL07                       HM14 HM15 HM18 NN02 NN03                       NN04 NN22 NN23 NN25 NN26                       NN33 NN44 NN46 NN47 NN73                       PP01 PP13 PP33 QQ03 QQ04                       QQ05 QQ11

Claims (5)

[Claims] 1. A light-shielding scanning line provided on a substrate,
A semiconductor layer forming a thin film transistor provided on the scan line via an insulating film, and an island-shaped gate electrode provided on the semiconductor layer via an insulating film and electrically connected to the scan line, A liquid crystal device, comprising: a pixel electrode electrically connected to a semiconductor layer forming the thin film transistor; and a capacitor electrode forming a storage capacitor formed of the same film as the island-shaped gate electrode. 2. The storage capacitor is composed of a capacitance electrode formed of the same film as the island-shaped gate electrode and a capacitance electrode formed of the same film as the semiconductor layer. 1. The liquid crystal device according to 1. 3. The capacitive electrode formed of the same film as the island-shaped gate electrode extends along the scanning line from a region of a data line electrically connected to the semiconductor layer. The liquid crystal device according to claim 1 or 2. 4. A channel region of a semiconductor layer forming the thin film transistor is formed in a region of a data line electrically connected to the semiconductor layer, and the gate electrode is formed in a region of the scanning line. Claims 1 to 3
The liquid crystal device according to claim 1. 5. An electronic apparatus comprising the liquid crystal device according to claim 1. Description: