JP2003176335A - Epoxy resin composition and semiconductor device using the same - Google Patents

Epoxy resin composition and semiconductor device using the same

Info

Publication number
JP2003176335A
JP2003176335A JP2002299106A JP2002299106A JP2003176335A JP 2003176335 A JP2003176335 A JP 2003176335A JP 2002299106 A JP2002299106 A JP 2002299106A JP 2002299106 A JP2002299106 A JP 2002299106A JP 2003176335 A JP2003176335 A JP 2003176335A
Authority
JP
Japan
Prior art keywords
epoxy resin
flame
molecule
resin composition
retardant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002299106A
Other languages
Japanese (ja)
Other versions
JP3627736B2 (en
JP2003176335A5 (en
Inventor
Shinichi Iwasaki
慎一 岩崎
Masatoshi Ichi
正年 位地
Yukihiro Kiuchi
幸浩 木内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Sumitomo Bakelite Co Ltd
Original Assignee
NEC Corp
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Sumitomo Bakelite Co Ltd filed Critical NEC Corp
Priority to JP2002299106A priority Critical patent/JP3627736B2/en
Publication of JP2003176335A publication Critical patent/JP2003176335A/en
Application granted granted Critical
Publication of JP3627736B2 publication Critical patent/JP3627736B2/en
Publication of JP2003176335A5 publication Critical patent/JP2003176335A5/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition for semiconductor sealing not containing a flame retardant such as a halogen flame retardant or antimony trioxide and excellent in flame retardance. <P>SOLUTION: This epoxy resin composition for semiconductor sealing consists essentially of (A) a phenol resin containing 30-100 pts.wt. phenol resin having a novolak structure and containing a biphenyl derivative and/or a naphthalene derivative based on total phenol resin amount in the molecule, (B) an epoxy resin containing 30-100 pts.wt. epoxy resin having a novolak structure and containing a biphenyl derivative and/or a naphthalene derivative in the molecule, (C) an inorganic filler and (D) a curing accelerator. <P>COPYRIGHT: (C)2003,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、難燃性および信頼
性に優れた半導体封止用エポキシ樹脂組成物及びこれを
用いた半導体装置に関するものである。
TECHNICAL FIELD The present invention relates to an epoxy resin composition for semiconductor encapsulation excellent in flame retardancy and reliability, and a semiconductor device using the same.

【0002】[0002]

【従来の技術】従来、ダイオード、トランジスタ、集積
回路等の電子部品は、主にエポキシ樹脂組成物で封止さ
れている。このエポキシ樹脂組成物中には、難燃性を確
保するために難燃剤としてハロゲン系難燃剤と三酸化ア
ンチモンが配合されている。ところが、環境・衛生の点
からハロゲン系難燃剤、三酸化アンチモンを使用しない
難燃性に優れたエポキシ樹脂組成物の開発が要求されて
いる。この要求に対して、水酸化アルミニウムや水酸化
マグネシウム等の水酸化物、硼素系化合物が検討されて
きたが、多量に配合しないと難燃性の効果が発現しな
い、不純物が多く耐湿性に問題があることから実用化さ
れていない。また赤燐系の難燃剤は少量の添加で効果が
ありエポキシ樹脂組成物の難燃化に有用であるが、赤燐
は微量の水分と反応しフォスフィンや腐食性の燐酸を生
じるため、耐湿性に問題があり耐湿性に対する要求が極
めて厳しい半導体封止用エポキシ樹脂組成物には使用で
きない。このため、赤燐粒子を水酸化アルミニウム、金
属酸化物、その他無機化合物、熱硬化性樹脂等の有機化
合物で被覆し、赤燐の安定化をはかっているが、依然耐
湿性に問題があり、難燃性・耐湿性が両立するハロゲン
系難燃剤、三酸化アンチモンを使用しないエポキシ樹脂
組成物がないのが実状である。
2. Description of the Related Art Conventionally, electronic parts such as diodes, transistors and integrated circuits are mainly sealed with an epoxy resin composition. In this epoxy resin composition, a halogen-based flame retardant and antimony trioxide are blended as flame retardants in order to ensure flame retardancy. However, from the viewpoint of environment and hygiene, development of an epoxy resin composition which does not use a halogen-based flame retardant or antimony trioxide and has excellent flame retardancy is required. In response to this requirement, hydroxides such as aluminum hydroxide and magnesium hydroxide, and boron compounds have been studied, but if they are not blended in a large amount, flame retardant effects will not be expressed, and there are many impurities and problems with moisture resistance. It has not been put to practical use because Red phosphorus-based flame retardants are effective in adding a small amount and are useful for making epoxy resin compositions flame-retardant.However, red phosphorus reacts with a small amount of water to produce phosphine and corrosive phosphoric acid. However, it cannot be used for epoxy resin compositions for semiconductor encapsulation, which have extremely severe requirements for moisture resistance. Therefore, red phosphorus particles are coated with aluminum hydroxide, metal oxides, other inorganic compounds, organic compounds such as thermosetting resins to stabilize red phosphorus, but there is still a problem in moisture resistance, The reality is that there is no epoxy resin composition that does not use a halogen-based flame retardant, antimony trioxide, which has both flame retardancy and moisture resistance.

【0003】[0003]

【発明が解決しようとする課題】本発明は、この様な問
題に対して、難燃剤を一切使用することなく難燃性およ
び信頼性に優れた半導体封止用エポキシ樹脂組成物及び
それを用いた半導体装置を提供するものである。
SUMMARY OF THE INVENTION The present invention addresses the above problems by using an epoxy resin composition for semiconductor encapsulation excellent in flame retardancy and reliability without using any flame retardant and using the same. The present invention provides a semiconductor device.

【0004】[0004]

【課題を解決するための手段】本発明は、上記の課題を
解決すべく鋭意研究を重ねた結果、特定のエポキシ樹
脂、特定のフェノール樹脂を適用すれば難燃剤を使用せ
ずに難燃性および信頼性に優れる半導体封止用エポキシ
樹脂組成物が得られることを見いだした。また反応性を
制御すればさらに難燃性がレベルアップすることも見い
だし本発明を完成するに至った。即ち本発明は、(A)
分子中にビフェニル誘導体を含むノボラック構造のフェ
ノール樹脂を総フェノール樹脂量中に30〜100重量
%含むフェノール樹脂、(B)分子中にビフェニル誘導
体および/またはナフタレン誘導体を含むノボラック構
造のエポキシ樹脂を総エポキシ樹脂量中に30〜100
重量%含むエポキシ樹脂、(C)無機充填材、(D)硬
化促進剤を必須成分とし、且つ難燃剤を無配合とするこ
とを特徴とする難燃性半導体封止用エポキシ樹脂組成物
である。また、本発明は、(A)分子中にビフェニル誘
導体および/またはナフタレン誘導体を含むノボラック
構造のフェノール樹脂を総フェノール樹脂量中に30〜
100重量%含むフェノール樹脂、(B)分子中にビフ
ェニル誘導体を含むノボラック構造のエポキシ樹脂を総
エポキシ樹脂量中に30〜100重量%含むエポキシ樹
脂、(C)無機充填材、(D)硬化促進剤を必須成分と
し、且つ難燃剤を無配合とすることを特徴とする難燃性
半導体封止用エポキシ樹脂組成物である。また、本発明
は、(A)分子中にビフェニル誘導体および/またはナ
フタレン誘導体を含むノボラック構造のフェノール樹脂
を総フェノール樹脂量中に30〜100重量%含むフェ
ノール樹脂、(B)分子中にビフェニル誘導体および/
またはナフタレン誘導体を含むノボラック構造のエポキ
シ樹脂を総エポキシ樹脂量中に30〜100重量%含む
エポキシ樹脂、(C)無機充填材、(D)硬化促進剤、
および添加剤からなり、該添加剤が、(E)着色剤、
(F)カップリング剤、(G)離型剤、(H)低応力成
分および(I)酸化防止剤からなる群より選択される1
種以上であることを特徴とする難燃性半導体封止用エポ
キシ樹脂組成物である。本発明の半導体封止用エポキシ
樹脂組成物は総エポキシ樹脂のエポキシ基数に対する総
フェノール樹脂のフェノール性水酸基数の比が、1より
大きく2以下であればなお好ましい。本発明は、これら
の樹脂組成物により半導体素子が封止されてなる樹脂封
止型半導体装置をも提供する。
Means for Solving the Problems As a result of intensive studies to solve the above-mentioned problems, the present invention shows that when a specific epoxy resin or a specific phenol resin is applied, flame retardancy is achieved without using a flame retardant. It has also been found that a highly reliable epoxy resin composition for semiconductor encapsulation can be obtained. It was also found that the flame retardancy is further increased by controlling the reactivity, and the present invention has been completed. That is, the present invention is (A)
A phenol resin having a novolac structure containing a biphenyl derivative in the molecule is contained in an amount of 30 to 100% by weight based on the total amount of the phenol resin, and (B) a novolac structure epoxy resin containing a biphenyl derivative and / or a naphthalene derivative is contained in the molecule. 30-100 in the amount of epoxy resin
A flame-retardant epoxy resin composition for encapsulating a semiconductor, comprising an epoxy resin containing (%) by weight, (C) an inorganic filler, and (D) a curing accelerator as essential components and containing no flame retardant. . In addition, the present invention provides a novolac-structured phenolic resin (A) containing a biphenyl derivative and / or a naphthalene derivative in the total amount of 30 to 30% of the total phenolic resin.
Phenolic resin containing 100 wt%, (B) epoxy resin containing 30 to 100 wt% of novolac structure epoxy resin containing biphenyl derivative in the molecule, (C) inorganic filler, (D) curing acceleration A flame-retardant epoxy resin composition for encapsulating a semiconductor, which comprises an agent as an essential component and does not contain a flame retardant. Further, the present invention relates to (A) a phenol resin having a novolac structure-containing phenol resin containing a biphenyl derivative and / or a naphthalene derivative in the total amount of the phenol resin in an amount of 30 to 100% by weight, and (B) a biphenyl derivative in the molecule. and/
Alternatively, an epoxy resin containing a novolac structure epoxy resin containing a naphthalene derivative in an amount of 30 to 100% by weight in the total amount of epoxy resin, (C) an inorganic filler, (D) a curing accelerator,
And (E) a colorant,
1 selected from the group consisting of (F) coupling agent, (G) release agent, (H) low stress component, and (I) antioxidant
It is a flame-retardant epoxy resin composition for encapsulating a semiconductor, characterized by comprising at least one kind. In the epoxy resin composition for semiconductor encapsulation of the present invention, it is more preferable that the ratio of the number of phenolic hydroxyl groups of the total phenolic resin to the number of epoxy groups of the total epoxy resin is more than 1 and 2 or less. The present invention also provides a resin-encapsulated semiconductor device in which a semiconductor element is encapsulated with these resin compositions.

【0005】[0005]

【発明の実施の形態】本発明はエポキシ樹脂組成物にお
いて、特定のフェノール樹脂との特定のエポキシ樹脂の
組み合わせが難燃性、信頼性に優れることをみいだし
た。また反応性を制御することにより難燃性がさらに向
上することを見いだした。本発明のフェノール樹脂とは
分子中にビフェニル誘導体および/またはナフタレン誘
導体を含むノボラック構造のフェノール樹脂のことであ
り、エポキシ樹脂とは分子中にビフェニル誘導体および
/またはナフタレン誘導体を含むノボラック構造のエポ
キシ樹脂のことであり、フェノール樹脂、エポキシ樹脂
の分子中にビフェニル誘導体やナフタレン誘導体などの
芳香族環を含有するものである。フェノール樹脂および
エポキシ樹脂にビフェニル誘導体やナフタレン誘導体の
ような芳香族環が含まれると分子間の結合間エネルギー
が大きくなり燃焼による分解が起こりにくくなり難燃性
が発現する。フェノール樹脂あるいはエポキシ樹脂の分
子中の芳香族環数は多い方すなわちナフタレンよりアン
トラセンの方が燃えにくくなり難燃性は向上するが、軟
化点が高くなりすぎ流動性の問題があり、ビフェニル誘
導体、ナフタレン誘導体が難燃性と流動性のバランスが
良く最適である。また、反応性を制御することによりさ
らに難燃性を向上させることができる。即ち、総エポキ
シ樹脂のエポキシ基数に対する総フェノール樹脂のフェ
ノール性水酸基数の比を1より大きくすると難燃性がさ
らに向上する。これは、樹脂組成物中にエポキシ基と反
応せずに余った水酸基が存在しており、樹脂組成物の硬
化物を燃焼させる際、残余の水酸基同士の脱水熱分解に
よる吸熱反応が起こるためである。総エポキシ樹脂のエ
ポキシ基数に対する総フェノール樹脂のフェノール性水
酸基数の比は2以下が好ましく、2を越えると反応性が
極端に低下する。さらに好ましくは1.1以上、1.5
以下である。汎用のフェノール樹脂(フェノールノボラ
ック)とエポキシ樹脂(オルソクレゾールノボラック型
エポキシ)の組み合わせでは、総エポキシ樹脂のエポキ
シ基数に対して総フェノール樹脂のフェノール性水酸基
数の比を大きくしていくと吸水率が大きくなり耐湿信頼
性は低下する傾向にある。しかしながら、本発明のフェ
ノール樹脂とエポキシ樹脂との組み合わせにおいては、
吸水率の大幅な増加はみられず耐湿信頼性の低下も認め
られない。これは、本発明のフェノール樹脂、エポキシ
樹脂が疎水性の芳香族環を有していることと、架橋間距
離が汎用のフェノール樹脂(フェノールノボラック)と
エポキシ樹脂(オルソクレゾールノボラック型エポキ
シ)と比較して大きいために吸水率の大幅な増加は認め
られないと考えられる。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention has found that in an epoxy resin composition, a combination of a specific phenol resin with a specific epoxy resin is excellent in flame retardancy and reliability. It was also found that the flame retardancy is further improved by controlling the reactivity. The phenol resin of the present invention is a novolac structure phenol resin containing a biphenyl derivative and / or a naphthalene derivative in the molecule, and the epoxy resin is a novolac structure epoxy resin containing a biphenyl derivative and / or a naphthalene derivative in the molecule. That is, an aromatic ring such as a biphenyl derivative or a naphthalene derivative is contained in the molecule of a phenol resin or an epoxy resin. When an aromatic ring such as a biphenyl derivative or a naphthalene derivative is contained in a phenol resin or an epoxy resin, interbonding energy between molecules becomes large and decomposition due to combustion hardly occurs, and flame retardancy is exhibited. The number of aromatic rings in the molecule of the phenol resin or the epoxy resin is larger, that is, anthracene is more difficult to burn than naphthalene and the flame retardancy is improved, but the softening point is too high and there is a problem of fluidity, a biphenyl derivative, The naphthalene derivative is optimal because it has a good balance of flame retardancy and fluidity. Further, the flame retardancy can be further improved by controlling the reactivity. That is, when the ratio of the number of phenolic hydroxyl groups in the total phenolic resin to the number of epoxy groups in the total epoxy resin is greater than 1, flame retardancy is further improved. This is because there is a residual hydroxyl group that does not react with the epoxy group in the resin composition, and when burning a cured product of the resin composition, an endothermic reaction occurs due to dehydration thermal decomposition of the remaining hydroxyl groups. is there. The ratio of the number of phenolic hydroxyl groups in the total phenolic resin to the number of epoxy groups in the total epoxy resin is preferably 2 or less, and when it exceeds 2, the reactivity is extremely reduced. More preferably 1.1 or more, 1.5
It is the following. In the combination of general-purpose phenol resin (phenol novolac) and epoxy resin (orthocresol novolac type epoxy), the water absorption increases as the ratio of the total phenolic resin phenolic hydroxyl groups to the total epoxy resin epoxy groups increases. However, the moisture resistance tends to decrease and the moisture resistance reliability tends to decrease. However, in the combination of the phenol resin and the epoxy resin of the present invention,
No significant increase in water absorption was observed and no decrease in moisture resistance reliability was observed. This is because the phenolic resin and epoxy resin of the present invention have a hydrophobic aromatic ring, and the distance between crosslinks is compared with general-purpose phenolic resin (phenol novolac) and epoxy resin (orthocresol novolac type epoxy). It is considered that a large increase in water absorption rate is not recognized due to its large size.

【0006】本発明のフェノール樹脂とは分子中にビフ
ェニル誘導体および/またはナフタレン誘導体を含むノ
ボラック構造のフェノール樹脂のことであり、具体的に
はビフェニル誘導体を含むノボラック構造のフェノール
樹脂は式(1)に示される。式(1)で示されるフェノ
ール樹脂は、フェノールとビスメチレンビフェノール類
をフリーデル・クラフツ・アルキル化反応により得られ
る樹脂である。式(1)のnは1〜10であり、nが1
1以上の重量比率が大きくなると、樹脂粘度が高くなり
過ぎ流動性が低下する。難燃性の特性を発現させるに
は、式(1)で示されるフェノール樹脂を総フェノール
樹脂量中に30重量%以上、好ましくは50重量%以上
配合することが望ましい。30重量%未満であると難燃
性が不十分である。具体的なナフタレン誘導体を含むノ
ボラック構造のフェノール樹脂は式(3)、式(4)で
示されそれぞれα−ナフトール、およびβ−ナフトール
をベースとしている。式(3)のnは1〜7であり、n
が8以上の重量比率が大きくなると、樹脂粘度が高くな
り過ぎ流動性が低下する。難燃性の特性を発現させるに
は、式(3)で示されるフェノール樹脂を総フェノール
樹脂量中に30重量%以上、好ましくは50重量%以上
配合することが望ましい。30重量%未満であると難燃
性が不十分である。式(4)のnは1〜10であり、n
が11以上の重量比率が大きくなると、樹脂粘度が高く
なり過ぎ流動性が低下する。難燃性の特性を発現させる
には、式(4)で示されるフェノール樹脂を総フェノー
ル樹脂量中に30重量%以上、好ましくは50重量%以
上配合することが望ましい。30重量%未満であると難
燃性が不十分である。本発明でのフェノール樹脂以外
に、他のフェノール樹脂を併用することができ、1分子
中に2個以上のフェノール性水酸基を有するものを用い
れば良い。例えば、フェノールノボラック樹脂、クレゾ
ールノボラック樹脂、ジシクロペンタジエン変性フェノ
ール樹脂、キシリレン変性フェノール樹脂、テルペン変
性フェノール樹脂、トリフェノールメタン型ノボラック
樹脂等が挙げられる。本発明のエポキシ樹脂とは分子中
にビフェニル誘導体および/またはナフタレン誘導体を
含むノボラック構造のエポキシ樹脂のことであり、具体
的にはビフェニル誘導体を含むノボラック構造のエポキ
シ樹脂は式(1)のフェノール樹脂をグリシジルエーテ
ル化させて得られ、式(2)で示される。
The phenolic resin of the present invention is a novolac structure phenolic resin containing a biphenyl derivative and / or a naphthalene derivative in the molecule. Specifically, the novolac structure phenolic resin containing a biphenyl derivative is represented by the formula (1): Shown in. The phenol resin represented by the formula (1) is a resin obtained by a Friedel-Crafts alkylation reaction of phenol and bismethylene biphenol. In the formula (1), n is 1 to 10, and n is 1
When the weight ratio of 1 or more is large, the resin viscosity becomes too high and the fluidity is lowered. In order to exhibit flame retardant properties, it is desirable that the phenol resin represented by the formula (1) is blended in an amount of 30% by weight or more, preferably 50% by weight or more in the total amount of the phenol resin. If it is less than 30% by weight, the flame retardancy is insufficient. Phenolic resins having a novolac structure containing a specific naphthalene derivative are represented by formulas (3) and (4) and are based on α-naphthol and β-naphthol, respectively. In the formula (3), n is 1 to 7, and n
When the weight ratio is 8 or more, the resin viscosity becomes too high and the fluidity deteriorates. In order to exhibit flame retardancy, it is desirable that the phenol resin represented by the formula (3) is added in an amount of 30% by weight or more, preferably 50% by weight or more, based on the total amount of the phenol resin. If it is less than 30% by weight, the flame retardancy is insufficient. In the formula (4), n is 1 to 10, and n
When the weight ratio is 11 or more, the resin viscosity becomes too high and the fluidity decreases. In order to exhibit flame retardant properties, it is desirable to blend the phenol resin represented by the formula (4) in an amount of 30% by weight or more, preferably 50% by weight or more in the total amount of phenol resin. If it is less than 30% by weight, the flame retardancy is insufficient. In addition to the phenolic resin used in the present invention, other phenolic resins may be used in combination, and one having two or more phenolic hydroxyl groups in one molecule may be used. For example, phenol novolac resin, cresol novolac resin, dicyclopentadiene modified phenol resin, xylylene modified phenol resin, terpene modified phenol resin, triphenol methane type novolac resin and the like can be mentioned. The epoxy resin of the present invention is an epoxy resin having a novolac structure containing a biphenyl derivative and / or a naphthalene derivative in the molecule. Specifically, the epoxy resin having a novolak structure containing a biphenyl derivative is a phenol resin of the formula (1). Is obtained by glycidyl etherification and is represented by the formula (2).

【0007】式(2)のnは1〜10であり、nが11
以上の重量比率が大きくなると、樹脂粘度が高くなり過
ぎ流動性が低下する。難燃性の特性を発現させるには、
式(2)で示されるエポキシ樹脂を総エポキシ樹脂に中
に30重量%以上、好ましくは50重量%以上配合する
ことが望ましい。30重量%未満であると難燃性が不十
分である。具体的なナフタレン誘導体を含むノボラック
構造のエポキシ樹脂は式(3)、式(4)のそれぞれの
フェノール樹脂をグリシジルエーテル化させて得られ、
式(5)、式(6)で示される。式(5)のnは1〜7
であり、nが8以上の重量比率が大きくなると、樹脂粘
度が高くなり過ぎ流動性が低下する。難燃性の特性を発
現させるには、式(5)で示されるエポキシ樹脂を総エ
ポキシ樹脂量中に30重量%以上、好ましくは50重量
%以上配合することが望ましい。30重量%未満である
と難燃性が不十分である。式(6)のnは1〜10であ
り、nが11以上の重量比率が大きくなると、樹脂粘度
が高くなり過ぎ流動性が低下する。難燃性の特性を発現
させるには、式(6)で示されるエポキシ樹脂を総エポ
キシ樹脂量中に30重量%以上、好ましくは50重量%
以上配合することが望ましい。30重量%未満であると
難燃性が不十分である。本発明でのエポキシ樹脂以外
に、他のエポキシ樹脂を併用する場合は1分子中にエポ
キシ基を2個以上有するものを用いれば良い。例えば、
ビフェニル型エポキシ樹脂、ヒドロキノン型エポキシ樹
脂、スチルベン型エポキシ樹脂、ビスフェノール型エポ
キシ樹脂、フェノールノボラック型エポキシ樹脂、クレ
ゾールノボラック型エポキシ樹脂、トリフェノールメタ
ン型エポキシ樹脂、アルキル変性トリフェノールメタン
型エポキシ樹脂、トリアジン核含有エポキシ樹脂、ジシ
クロペンタジエン変性フェノール型エポキシ樹脂等が挙
げられる。
In the formula (2), n is 1 to 10, and n is 11
When the above weight ratio becomes large, the resin viscosity becomes too high and the fluidity is lowered. To develop flame retardant properties,
It is desirable that 30% by weight or more, preferably 50% by weight or more, of the epoxy resin represented by the formula (2) is blended in the total epoxy resin. If it is less than 30% by weight, the flame retardancy is insufficient. A specific epoxy resin having a novolac structure containing a naphthalene derivative is obtained by converting each of the phenol resins represented by the formulas (3) and (4) into glycidyl ether,
It is shown by equations (5) and (6). In the formula (5), n is 1 to 7
When the weight ratio of n is 8 or more, the resin viscosity becomes too high and the fluidity is lowered. In order to exhibit flame retardancy, it is desirable to mix the epoxy resin represented by the formula (5) in an amount of 30% by weight or more, preferably 50% by weight or more in the total amount of epoxy resin. If it is less than 30% by weight, the flame retardancy is insufficient. In the formula (6), n is 1 to 10, and when the weight ratio of n is 11 or more, the resin viscosity becomes too high and the fluidity decreases. In order to exhibit flame retardancy, the epoxy resin represented by the formula (6) is contained in the total amount of epoxy resin in an amount of 30% by weight or more, preferably 50% by weight.
It is desirable to mix the above. If it is less than 30% by weight, the flame retardancy is insufficient. When other epoxy resin is used in combination with the epoxy resin of the present invention, one having two or more epoxy groups in one molecule may be used. For example,
Biphenyl type epoxy resin, hydroquinone type epoxy resin, stilbene type epoxy resin, bisphenol type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane type epoxy resin, triazine nucleus Examples of the epoxy resin include a dicyclopentadiene-modified phenol type epoxy resin.

【0008】本発明に用いる硬化促進剤としては、エポ
キシ基とフェノール性水酸基との硬化反応を促進させる
ものであればよく、一般に封止材料に使用されているも
のを広く使用することができる。例えば、1,8−ジア
ザビシクロ(5,4,0)ウンデセン−7、トリフェニ
ルホスフィン、2−メチルイミダゾール等が挙げられ、
これらは単独でも混合して用いても差し支えない。
The curing accelerator used in the present invention may be any one as long as it accelerates the curing reaction between the epoxy group and the phenolic hydroxyl group, and those generally used for sealing materials can be widely used. Examples include 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, 2-methylimidazole, and the like,
These may be used alone or in combination.

【0009】本発明に用いる無機充填材としては、一般
に封止材料に使用されているものを広く使用することが
でき、例えば、溶融シリカ粉末、結晶シリカ粉末、アル
ミナ、窒化珪素等が挙げられ、これらは単独でも混合し
て用いても差し支えない。これら無機充填材の配合量と
しては、成形性と信頼性のバランスから全樹脂組成物中
に70〜95重量%含有することが好ましい。70重量
%未満だと難燃性が得られず、95重量%を越えると成
形性の問題が生じ好ましくない。
As the inorganic filler used in the present invention, those generally used for sealing materials can be widely used, and examples thereof include fused silica powder, crystalline silica powder, alumina and silicon nitride. These may be used alone or in combination. The blending amount of these inorganic fillers is preferably 70 to 95% by weight based on the balance between moldability and reliability in the total resin composition. If it is less than 70% by weight, flame retardancy cannot be obtained, and if it exceeds 95% by weight, there is a problem of moldability, which is not preferable.

【0010】本発明の樹脂組成物は、(A)〜(D)成
分の他、必要に応じてカーボンブラック等の着色剤、γ
-グリシドキシプロピルトリメトキシシラン等のカップ
リング剤、シリコーンオイル、シリコーンゴム等の低応
力成分、天然ワックス、合成ワックス、高級脂肪酸及び
その金属塩類もしくはパラフィン等の離型剤、酸化防止
剤等の各種添加剤を適宜配合しても差し支えない。本発
明の樹脂組成物は、(A)〜(D)成分、およびその他
の添加剤等をミキサーを用いて常温混合し、ロール、押
出機等の混練機で混練し、冷却後粉砕して得られる。本
発明の樹脂組成物を用いて、半導体等の電子部品を封止
し、樹脂封止型半導体装置を製造するには、トランスフ
ァーモールド、コンプレッションモールド、インジェク
ションモールド等、従来からの公知の手法で成形硬化す
ればよい。これらの樹脂組成物は、電気部品或いは電子
部品であるトランジスタ、集積回路等の被覆、絶縁、封
止等に適用することができる。また、電気部品、電子部
品以外の通常の成型品にも有効であり適用することがで
きる。
The resin composition of the present invention contains, in addition to the components (A) to (D), a coloring agent such as carbon black, γ if necessary.
-Coupling agents such as glycidoxypropyltrimethoxysilane, low-stress components such as silicone oil and silicone rubber, natural wax, synthetic wax, release agents such as higher fatty acids and their metal salts or paraffin, antioxidants, etc. Various additives may be blended appropriately. The resin composition of the present invention is obtained by mixing components (A) to (D), other additives, and the like at room temperature with a mixer, kneading with a kneader such as a roll or an extruder, cooling, and pulverizing. To be The resin composition of the present invention is used to mold electronic parts such as semiconductors and resin-molded semiconductor devices by conventional known methods such as transfer molding, compression molding, and injection molding. It should be cured. These resin compositions can be applied to the coating, insulation, sealing, etc. of transistors, integrated circuits, etc., which are electric or electronic parts. It is also effective and applicable to ordinary molded products other than electric parts and electronic parts.

【0011】[0011]

【実施例】以下に本発明の実施例を示すが、本発明はこ
れに限定されるものではない。実施例及び比較例で用い
たエポキシ樹脂、フェノール樹脂の略号及び構造を、ま
とめて以下に示す。 ・フェノール樹脂1:式(1)で示されるフェノール樹
脂(水酸基当量199g/eq)
EXAMPLES Examples of the present invention will be shown below, but the present invention is not limited thereto. The abbreviations and structures of the epoxy resin and the phenol resin used in Examples and Comparative Examples are shown below together. -Phenolic resin 1: Phenolic resin represented by the formula (1) (hydroxyl equivalent 199 g / eq)

【化7】 [Chemical 7]

【0012】・フェノール樹脂2:式(3)で示される
フェノール樹脂(水酸基当量:210g/eq)
Phenolic resin 2: Phenolic resin represented by the formula (3) (hydroxyl equivalent: 210 g / eq)

【化8】 [Chemical 8]

【0013】・フェノール樹脂3:式(4)で示される
フェノール樹脂(水酸基当量:210g/eq)
Phenolic resin 3: a phenolic resin represented by the formula (4) (hydroxyl equivalent: 210 g / eq)

【化9】 [Chemical 9]

【0014】・フェノール樹脂4:式(7)で示される
フェノール樹脂(水酸基当量175g/eq)
Phenolic resin 4: a phenolic resin represented by the formula (7) (hydroxyl equivalent 175 g / eq)

【化10】 [Chemical 10]

【0015】・フェノール樹脂5:式(8)で示される
フェノール樹脂(水酸基当量:97g/eq)
Phenolic resin 5: Phenolic resin represented by the formula (8) (hydroxyl group equivalent: 97 g / eq)

【化11】 [Chemical 11]

【0016】・エポキシ樹脂1:式(2)で示される構
造を主成分とするエポキシ樹脂(エポキシ当量274g
/eq)
Epoxy resin 1: an epoxy resin having a structure represented by the formula (2) as a main component (epoxy equivalent: 274 g
/ Eq)

【化12】 [Chemical 12]

【0017】・エポキシ樹脂2:式(5)で示される構
造を主成分とするエポキシ樹脂(エポキシ当量270g
/eq)
Epoxy resin 2: an epoxy resin having a structure represented by the formula (5) as a main component (epoxy equivalent: 270 g
/ Eq)

【化13】 [Chemical 13]

【0018】・エポキシ樹脂3:式(6)で示される構
造を主成分とするエポキシ樹脂(エポキシ当量270g
/eq)
Epoxy resin 3: an epoxy resin having a structure represented by the formula (6) as a main component (epoxy equivalent: 270 g
/ Eq)

【化14】 [Chemical 14]

【0019】・エポキシ樹脂4:式(9)で示される構
造を主成分とするエポキシ樹脂(エポキシ当量190g
/eq)
Epoxy resin 4: an epoxy resin having a structure represented by the formula (9) as a main component (epoxy equivalent of 190 g
/ Eq)

【化15】 [Chemical 15]

【0020】・エポキシ樹脂5:式(10)4,4'-ビス
(2,3-エポキシプロポキシ)-3,3',5,5'-テトラメチルス
チルベンを主成分とする樹脂60重量%と式(11)4,
4'-ビス(2,3-エポキシプロポキシ)-5-ターシャリブチル
-2,3',5'-トリメチルスチルベンを主成分とする樹脂4
0重量%の混合物(エポキシ当量210g/eq)
Epoxy resin 5: Formula (10) 4,4'-bis
(2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethylstilbene as the main component 60% by weight and the formula (11) 4,
4'-bis (2,3-epoxypropoxy) -5-tert-butyl
-2,3 ', 5'-Trimethylstilbene-based resin 4
0% by weight of mixture (epoxy equivalent 210 g / eq)

【化16】 [Chemical 16]

【0021】・エポキシ樹脂6:式(12)で示される
エポキシ樹脂(エポキシ当量196g/eq)
Epoxy resin 6: an epoxy resin represented by the formula (12) (epoxy equivalent 196 g / eq)

【化17】 [Chemical 17]

【0022】・エポキシ樹脂7:式(13)で示される
構造を主成分とするエポキシ樹脂(エポキシ当量171
g/eq)
Epoxy resin 7: Epoxy resin having a structure represented by the formula (13) as a main component (epoxy equivalent 171
g / eq)

【化18】 [Chemical 18]

【0023】なお実施例11、14、比較例1〜3、5
〜7に用いるフェノールノボラック樹脂の水酸基当量
は、104g/eq、実施例9、10、比較例1〜3、
5〜7に用いるオルソクレゾールノボラック型エポキシ
樹脂のエポキシ当量は200g/eqである。実施例4
〜15、比較例5〜7に用いる溶融球状シリカの平均粒
径22μm、比表面積5.0m2/gである。
Examples 11, 14 and Comparative Examples 1-3, 5
The hydroxyl equivalent of the phenol novolac resin used in Examples 7 to 104 is 104 g / eq, Examples 9 and 10, Comparative Examples 1 to 3,
The epoxy equivalent of the ortho-cresol novolac type epoxy resin used in 5 to 7 is 200 g / eq. Example 4
˜15, the average particle diameter of the fused spherical silica used in Comparative Examples 5 to 7 is 22 μm, and the specific surface area is 5.0 m 2 / g.

【0024】[0024]

【実施例】 実施例1 ・フェノール樹脂1 123重量部 ・エポキシ樹脂1 170重量部 (フェノール性水酸基の数とエポキシ基数との比 1.0) ・溶融破砕シリカ(平均粒径 15μm、比表面積 2.2m2/g) 700重量 部 ・トリフェニルホスフィン 2重量部 ・カーボンブラック 2重量部 ・カルナバワックス 3重量部 を常温でスーパーミキサーを用いて混合し、70〜10
0℃でロール混練し、冷却後粉砕して樹脂組成物とし
た。得られた樹脂組成物をタブレット化し、低圧トラン
スファー成形機にて175℃、70kg/cm2、12
0秒の成形条件で難燃性試験用試験片を作製した。ま
た、耐湿試験用として3.0×3.5mmのチップを1
6pDIPに封止した。下記の難燃性試験、耐湿信頼性
を実施した。評価結果を表1に示す。 難燃性試験:UL−94垂直試験(試料厚さ1.6mm) 難燃性(V−0)の判定: Fmax 10秒以内 ΣF 50秒以内 但し、ΣF:フレーミング時間の合計(秒) Fmax:フレーミング時間の最大値(秒) 耐湿性試験:封止したテスト用素子をプレッシャークッ
カー試験(125℃、100RH%)をおこない、回路
のオープン不良を測定した。耐湿性をプレッシャークッ
カー試験での不良発生時間とした。
Example 1 123 parts by weight of phenolic resin 1 170 parts by weight of epoxy resin 1 (ratio of the number of phenolic hydroxyl groups to the number of epoxy groups of 1.0) 1.0 fused fused silica (average particle size 15 μm, specific surface area 2) .2 m 2 / g) 700 parts by weight, 2 parts by weight of triphenylphosphine, 2 parts by weight of carbon black, and 3 parts by weight of carnauba wax are mixed at room temperature with a super mixer to obtain 70 to 10 parts.
The mixture was roll-kneaded at 0 ° C., cooled, and then pulverized to obtain a resin composition. The obtained resin composition is made into a tablet, which is then transferred to a low-pressure transfer molding machine at 175 ° C., 70 kg / cm 2 , 12
A test piece for flame retardancy test was prepared under a molding condition of 0 seconds. In addition, a 3.0 x 3.5 mm chip for moisture resistance test
Sealed to 6 pDIP. The following flame retardancy test and humidity resistance reliability were performed. The evaluation results are shown in Table 1. Flame retardance test: UL-94 vertical test (sample thickness 1.6 mm) Judgment of flame retardance (V-0): Fmax within 10 seconds ΣF within 50 seconds However, ΣF: total framing time (seconds) Fmax: Maximum value of framing time (seconds) Moisture resistance test: The sealed test element was subjected to a pressure cooker test (125 ° C., 100 RH%) to measure circuit open defects. Moisture resistance was defined as the time of occurrence of defects in the pressure cooker test.

【0025】実施例2〜15、比較例1〜7 表1、表2の配合に従い、実施例1と同様にして樹脂組
成物を作製し、実施例1と同様に評価した。評価結果を
表1、表2、表3に示す
Examples 2 to 15 and Comparative Examples 1 to 7 According to the formulations shown in Tables 1 and 2, resin compositions were prepared in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The evaluation results are shown in Table 1, Table 2 and Table 3.

【0026】[0026]

【表1】 [Table 1]

【0027】[0027]

【表2】 [Table 2]

【0028】[0028]

【表3】 [Table 3]

【0029】[0029]

【発明の効果】本発明のハロゲン系、三酸化アンチモン
等の難燃剤を含まない樹脂組成物で封止された半導体装
置は難燃性に優れている。
The semiconductor device encapsulated with the resin composition containing no flame retardant such as halogen-based antimony trioxide according to the present invention has excellent flame retardancy.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 位地 正年 東京都港区芝五丁目7番1号 日本電気株 式会社内 (72)発明者 木内 幸浩 東京都港区芝五丁目7番1号 日本電気株 式会社内 Fターム(参考) 4J036 AA05 AB16 AC01 AC02 AC05 AD07 AD08 AD10 AE07 AF06 AF08 DA05 DC41 DC46 DD07 FA03 FA04 FA05 FB01 FB06 FB07 FB08 FB16 GA28 JA07 4M109 AA01 CA01 EA02 EB03 EB07   ─────────────────────────────────────────────────── ─── Continued front page    (72) New Year             5-7 Shiba 5-1, Minato-ku, Tokyo NEC Corporation             Inside the company (72) Inventor Yukihiro Kiuchi             5-7 Shiba 5-1, Minato-ku, Tokyo NEC Corporation             Inside the company F-term (reference) 4J036 AA05 AB16 AC01 AC02 AC05                       AD07 AD08 AD10 AE07 AF06                       AF08 DA05 DC41 DC46 DD07                       FA03 FA04 FA05 FB01 FB06                       FB07 FB08 FB16 GA28 JA07                 4M109 AA01 CA01 EA02 EB03 EB07

Claims (13)

【特許請求の範囲】[Claims] 【請求項1】 (A)分子中にビフェニル誘導体を含む
ノボラック構造のフェノール樹脂を総フェノール樹脂量
中に30〜100重量%含むフェノール樹脂、(B)分
子中にビフェニル誘導体および/またはナフタレン誘導
体を含むノボラック構造のエポキシ樹脂を総エポキシ樹
脂量中に30〜100重量%含むエポキシ樹脂、(C)
無機充填材、(D)硬化促進剤を必須成分とし、且つ難
燃剤を無配合とすることを特徴とする難燃性半導体封止
用エポキシ樹脂組成物。
1. A phenolic resin containing 30 to 100% by weight of a novolak structure phenolic resin containing a biphenyl derivative in the molecule in (A) a biphenyl derivative and / or a naphthalene derivative in a molecule in (B). Epoxy resin containing 30 to 100% by weight of total epoxy resin containing novolac structure epoxy resin (C)
An epoxy resin composition for encapsulating a flame-retardant semiconductor, which comprises an inorganic filler and (D) a curing accelerator as essential components and does not contain a flame retardant.
【請求項2】 (A)分子中にビフェニル誘導体および
/またはナフタレン誘導体を含むノボラック構造のフェ
ノール樹脂を総フェノール樹脂量中に30〜100重量
%含むフェノール樹脂、(B)分子中にビフェニル誘導
体を含むノボラック構造のエポキシ樹脂を総エポキシ樹
脂量中に30〜100重量%含むエポキシ樹脂、(C)
無機充填材、(D)硬化促進剤を必須成分とし、且つ難
燃剤を無配合とすることを特徴とする難燃性半導体封止
用エポキシ樹脂組成物。
2. A phenolic resin containing 30 to 100% by weight of a novolac structure phenolic resin containing (A) a biphenyl derivative and / or a naphthalene derivative in the molecule, and (B) a biphenyl derivative in the molecule. Epoxy resin containing 30 to 100% by weight of total epoxy resin containing novolac structure epoxy resin (C)
An epoxy resin composition for encapsulating a flame-retardant semiconductor, which comprises an inorganic filler and (D) a curing accelerator as essential components and does not contain a flame retardant.
【請求項3】 (A)分子中にビフェニル誘導体および
/またはナフタレン誘導体を含むノボラック構造のフェ
ノール樹脂を総フェノール樹脂量中に30〜100重量
%含むフェノール樹脂、(B)分子中にビフェニル誘導
体および/またはナフタレン誘導体を含むノボラック構
造のエポキシ樹脂を総エポキシ樹脂量中に30〜100
重量%含むエポキシ樹脂、(C)無機充填材、(D)硬
化促進剤、および添加剤からなり、該添加剤が、(E)
着色剤、(F)カップリング剤、(G)離型剤、(H)
低応力成分および(I)酸化防止剤からなる群より選択
される1種以上であることを特徴とする難燃性半導体封
止用エポキシ樹脂組成物。
3. A phenolic resin containing (A) a phenolic resin having a novolak structure containing a biphenyl derivative and / or a naphthalene derivative in the molecule in an amount of 30 to 100% by weight, and (B) a biphenyl derivative in the molecule. The epoxy resin having a novolac structure containing a // naphthalene derivative is 30 to 100 in the total amount of the epoxy resin.
It comprises an epoxy resin containing (wt)% by weight, (C) an inorganic filler, (D) a curing accelerator, and an additive, and the additive is (E).
Coloring agent, (F) coupling agent, (G) release agent, (H)
An epoxy resin composition for encapsulating a flame-retardant semiconductor, which is one or more selected from the group consisting of a low stress component and (I) an antioxidant.
【請求項4】 (A)分子中にビフェニル誘導体および
/またはナフタレン誘導体を含むノボラック構造のフェ
ノール樹脂を総フェノール樹脂量中に30〜100重量
%含むフェノール樹脂、(B)分子中にビフェニル誘導
体および/またはナフタレン誘導体を含むノボラック構
造のエポキシ樹脂を総エポキシ樹脂量中に30〜100
重量%含むエポキシ樹脂、(C)無機充填材、(D)硬
化促進剤、(E)着色剤、(G)離型剤からなることを
特徴とする難燃性半導体封止用エポキシ樹脂組成物。
4. A phenolic resin containing (A) a phenolic resin having a novolac structure containing a biphenyl derivative and / or a naphthalene derivative in the molecule in an amount of 30 to 100% by weight based on the total amount of the phenolic resin, and (B) a biphenyl derivative in the molecule. The epoxy resin having a novolac structure containing a // naphthalene derivative is 30 to 100 in the total amount of the epoxy resin.
A flame-retardant epoxy resin composition for encapsulating a semiconductor, which comprises an epoxy resin containing wt%, (C) an inorganic filler, (D) a curing accelerator, (E) a colorant, and (G) a release agent. .
【請求項5】 前記エポキシ基と反応せずに余った水酸
基が存在することを特徴とする請求項1〜4のいずれか
1項に記載の難燃性半導体封止用エポキシ樹脂組成物。
5. The flame-retardant semiconductor encapsulating epoxy resin composition according to claim 1, wherein a residual hydroxyl group that has not reacted with the epoxy group is present.
【請求項6】 総エポキシ樹脂のエポキシ基数に対する
総フェノール樹脂のフェノール性水酸基数の比が、1よ
り大きく2以下である請求項1〜5のいずれか1項に記
載の難燃性半導体封止用エポキシ樹脂組成物。
6. The flame-retardant semiconductor encapsulation according to claim 1, wherein the ratio of the number of phenolic hydroxyl groups in the total phenolic resin to the number of epoxy groups in the total epoxy resin is greater than 1 and 2 or less. Epoxy resin composition for use.
【請求項7】 分子中にビフェニル誘導体を含むノボラ
ック構造のフェノール樹脂が式(1)で示される請求項
1〜6のいずれか1項に記載の難燃性半導体封止用エポ
キシ樹脂組成物 【化1】 (n=1〜10)
7. A flame-retardant semiconductor encapsulating epoxy resin composition according to claim 1, wherein the phenol resin having a novolac structure containing a biphenyl derivative in the molecule is represented by the formula (1). Chemical 1] (N = 1 to 10)
【請求項8】 分子中にビフェニル誘導体を含むノボラ
ック構造のエポキシ樹脂が式(2)で示される請求項1
〜7のいずれか1項に記載の難燃性半導体封止用エポキ
シ樹脂組成物。 【化2】 (n=1〜10)
8. An epoxy resin having a novolac structure containing a biphenyl derivative in the molecule is represented by the formula (2).
An epoxy resin composition for encapsulating a flame-retardant semiconductor according to any one of items 1 to 7. [Chemical 2] (N = 1 to 10)
【請求項9】 分子中にナフタレン誘導体を含むノボラ
ック構造のフェノール樹脂が式(3)で示される請求項
2〜8のいずれか1項に記載の難燃性半導体封止用エポ
キシ樹脂組成物。 【化3】 (n=1〜7)
9. The epoxy resin composition for encapsulating a flame-retardant semiconductor according to claim 2, wherein the phenol resin having a novolac structure containing a naphthalene derivative in the molecule is represented by formula (3). [Chemical 3] (N = 1 to 7)
【請求項10】 分子中にナフタレン誘導体を含むノボ
ラック構造のフェノール樹脂が式(4)で示される請求
項2〜8のいずれか1項に記載の難燃性半導体封止用エ
ポキシ樹脂組成物。 【化4】 (n=1〜10)
10. The flame-retardant semiconductor encapsulating epoxy resin composition according to claim 2, wherein the phenol resin having a novolac structure containing a naphthalene derivative in the molecule is represented by the formula (4). [Chemical 4] (N = 1 to 10)
【請求項11】 分子中にナフタレン誘導体を含むノボ
ラック構造のエポキシ樹脂が式(5)で示される請求項
1、3〜10のいずれか1項に記載の難燃性半導体封止
用エポキシ樹脂組成物。 【化5】 (n=1〜7)
11. The epoxy resin composition for encapsulating a flame-retardant semiconductor according to claim 1, wherein the epoxy resin having a novolac structure containing a naphthalene derivative in the molecule is represented by formula (5). object. [Chemical 5] (N = 1 to 7)
【請求項12】 分子中にナフタレン誘導体を含むノボ
ラック構造のエポキシ樹脂が式(6)で示される請求項
1、3〜10のいずれか1項に記載の難燃性半導体封止
用エポキシ樹脂組成物。 【化6】 (n=1〜10)
12. The epoxy resin composition for encapsulating a flame-retardant semiconductor according to claim 1, wherein the epoxy resin having a novolac structure containing a naphthalene derivative in the molecule is represented by the formula (6). object. [Chemical 6] (N = 1 to 10)
【請求項13】 請求項1〜12のいずれか1項に記載
の難燃性半導体封止用エポキシ樹脂組成物を用いて封止
してなることを特徴とする半導体装置。
13. A semiconductor device which is encapsulated with the flame-retardant epoxy resin composition for semiconductor encapsulation according to claim 1. Description:
JP2002299106A 2002-10-11 2002-10-11 Epoxy resin composition and semiconductor device using the same Expired - Lifetime JP3627736B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002299106A JP3627736B2 (en) 2002-10-11 2002-10-11 Epoxy resin composition and semiconductor device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002299106A JP3627736B2 (en) 2002-10-11 2002-10-11 Epoxy resin composition and semiconductor device using the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9306847A Division JPH11140277A (en) 1997-11-10 1997-11-10 Epoxy resin composition and semiconductor device produced by using the composition

Publications (3)

Publication Number Publication Date
JP2003176335A true JP2003176335A (en) 2003-06-24
JP3627736B2 JP3627736B2 (en) 2005-03-09
JP2003176335A5 JP2003176335A5 (en) 2005-05-19

Family

ID=19197286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002299106A Expired - Lifetime JP3627736B2 (en) 2002-10-11 2002-10-11 Epoxy resin composition and semiconductor device using the same

Country Status (1)

Country Link
JP (1) JP3627736B2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04300914A (en) * 1991-03-29 1992-10-23 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04342719A (en) * 1991-05-21 1992-11-30 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH0597969A (en) * 1991-10-03 1993-04-20 Shin Etsu Chem Co Ltd Thermosetting resin composition and semiconductor device
JPH0625384A (en) * 1992-07-06 1994-02-01 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH0931160A (en) * 1995-07-21 1997-02-04 Toshiba Corp Epoxy resin composition and resin-sealed semiconductor device
JPH11140277A (en) * 1997-11-10 1999-05-25 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device produced by using the composition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04300914A (en) * 1991-03-29 1992-10-23 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH04342719A (en) * 1991-05-21 1992-11-30 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH0597969A (en) * 1991-10-03 1993-04-20 Shin Etsu Chem Co Ltd Thermosetting resin composition and semiconductor device
JPH0625384A (en) * 1992-07-06 1994-02-01 Shin Etsu Chem Co Ltd Epoxy resin composition and semiconductor device
JPH0931160A (en) * 1995-07-21 1997-02-04 Toshiba Corp Epoxy resin composition and resin-sealed semiconductor device
JPH11140277A (en) * 1997-11-10 1999-05-25 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device produced by using the composition

Also Published As

Publication number Publication date
JP3627736B2 (en) 2005-03-09

Similar Documents

Publication Publication Date Title
KR100524248B1 (en) Epoxy resin composition and semiconductor device using the same
WO2004099313A1 (en) Flame-retardant molding compositions
JP3343704B2 (en) Epoxy resin composition
JP3317481B2 (en) Resin composition for semiconductor encapsulation
JP3339772B2 (en) Epoxy resin composition
JP2000281877A (en) Epoxy resin composition and semiconductor device
JP3032528B1 (en) Sealing resin composition and semiconductor sealing device
JP2843244B2 (en) Epoxy resin composition
JPH08151427A (en) Epoxy resin composition
JPH10152599A (en) Epoxy resin composition
JP2003176335A (en) Epoxy resin composition and semiconductor device using the same
JPH11302501A (en) Epoxy resin composition and semiconductor device
JP2002363261A (en) Flame-retardant epoxy resin composition, semiconductor sealing material and semiconductor device
JPH1077390A (en) Epoxy resin composition
JP2002241587A (en) Epoxy resin composition and semiconductor device
JP2938080B2 (en) Epoxy resin composition for semiconductor encapsulation
JPH07173372A (en) Epoxy resin composition
JP2000281874A (en) Epoxy resin composition and semiconductor device
JPH02219814A (en) Epoxy resin composition
JP2002363381A (en) Flame-retardant epoxy resin composition, semiconductor sealing medium and semiconductor device
JP2002256138A (en) Flame-retardant epoxy resin composition, semiconductor sealing material, and semiconductor device
JP2001210759A (en) Epoxy resin composition and electronic component sealed device
JPH11269347A (en) Epoxy resin composition for sealing semiconductor and semiconductor device using the composition
JP2004300213A (en) Flame-retardant epoxy resin composition and semiconductor device using the composition
JP2007137943A (en) Resin composition for sealing and semiconductor device

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040714

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040714

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20040714

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20040811

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040820

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041014

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20041124

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20041129

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071217

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081217

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091217

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101217

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111217

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111217

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121217

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121217

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131217

Year of fee payment: 9

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term