JP2003168724A - Ceramic board used for semiconductor manufacturing/ checking device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a ceramic board used for a semiconductor manufacturing/ checking device, which has a surface that is hardly corroded even if it is exposed to reactive gas or halogen gas for a long term, is superior in corrosion resistance, hardly cracked even if vibrations or a thermal shock is applied, and excellent in durability. <P>SOLUTION: A conductor is provided inside a ceramic board used for a semiconductor manufacturing/checking device, and island-shaped layers formed of yttrium compound are dispersedly formed on the surface of the ceramic board. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in a hot plate (ceramic heater), an electrostatic chuck, a susceptor, etc.
The present invention relates to a ceramic substrate for an inspection device and a method for manufacturing the same.

[0002]

2. Description of the Related Art In semiconductor manufacturing / inspection equipment including etching equipment and chemical vapor deposition equipment, heaters and electrostatic chucks using metal base materials such as stainless steel and aluminum alloy have been conventionally used. Has been used.

However, such a metal heater is
There were the following problems. First of all, because it is made of metal,
The thickness of the heater plate should be as thick as about 15 mm. This is because, in a thin metal plate, warping, distortion, etc. may not occur due to thermal expansion due to heating, and the silicon wafer placed on the metal plate may be damaged or tilted. However, when the thickness of the heater plate is increased, there is a problem that the weight of the heater becomes heavy and the heater becomes bulky.

Further, the temperature of a surface (hereinafter referred to as a heating surface) for heating an object to be heated such as a silicon wafer is controlled by changing the voltage and the amount of current applied to the resistance heating element. Since it is thick, the temperature of the heater plate does not quickly follow changes in voltage and current amount, and there is a problem that temperature control is difficult.

Therefore, aluminum nitride, which is a non-oxide ceramic having high thermal conductivity and high strength, is used as a substrate for a heater or the like in semiconductor manufacturing / inspection equipment,
A hot plate has been proposed in which a resistance heating element and a through hole made of tungsten are formed in the aluminum nitride substrate, and a nichrome wire is brazed to these as an external terminal.

Since such a hot plate uses an aluminum nitride substrate having high mechanical strength even at high temperatures, the thickness of the aluminum nitride substrate can be reduced to reduce the heat capacity, and as a result, the voltage can be reduced. The temperature of the aluminum nitride substrate can be quickly made to follow the change of the current amount. As a method of manufacturing such an aluminum nitride substrate, there is a method of surrounding a molded body formed by stacking green sheets and the like with BN and firing it in N ₂ or Ar gas.

[0007]

However, in the aluminum nitride substrate manufactured by such a method, yttria which is a sintering aid diffuses in the surface direction during firing and becomes a gas, Since it is absorbed by BN, the concentration of yttria becomes thinner toward the surface. for that reason,
The above-mentioned aluminum nitride substrate is not very excellent in corrosion resistance, and in a hot plate using this aluminum nitride substrate, when the aluminum nitride substrate is continuously exposed to a reactive gas or a halogen gas for a long time, the aluminum nitride substrate is It may be corroded, aluminum nitride particles may fall off and adhere to an object to be processed such as a silicon wafer, which may cause generation of particles.

The present invention has been made in order to solve the above problems, and even if it is exposed to a reactive gas or a halogen gas for a long period of time, its surface is not corroded and it has excellent corrosion resistance. , Semiconductor manufacturing with excellent durability that does not easily crack due to vibration or thermal shock.
An object of the present invention is to realize a ceramic substrate for an inspection device and a manufacturing method thereof.

[0009]

SUMMARY OF THE INVENTION The present invention is a ceramic substrate for semiconductor manufacturing / inspection equipment having a conductor provided therein, wherein a layer made of a compound of yttrium is an island on the surface of the ceramic substrate. It is a ceramic substrate for a semiconductor manufacturing / inspection device, which is formed by being dispersed in a shape of a circle.

The ceramic substrate for semiconductor manufacturing / inspection equipment of the present invention (hereinafter, also simply referred to as a ceramic substrate) has a layer made of a compound of yttrium dispersed in an island shape on the surface thereof, so that it has corrosion resistance. Excellent, even if it is exposed to reactive gas or halogen gas for a long period of time, its surface is not corroded, and ceramic particles fall off from the above-mentioned ceramic substrate and become an object to be processed such as a silicon wafer. There is no adhesion and no particles are generated.

The conductor is a resistance heating element, and the ceramic substrate of the present invention preferably functions as a hot plate. This is because a ceramic substrate formed by interspersing yttrium compound domains is particularly desirable at high temperatures. The resistance heating element may be formed in a layered form or a linear body.

Further, it is desirable that the conductor is an electrostatic electrode, and the ceramic substrate of the present invention functions as an electrostatic chuck. This is because the electrostatic chuck is often used in a corrosive atmosphere, and the ceramic substrate on which the yttrium compound layer is formed is optimal. In addition,
Examples of the yttrium compound include yttrium nitride and yttrium carbide.

The method of manufacturing a ceramic substrate according to the present invention is a method of manufacturing a ceramic substrate in which a conductor is provided, wherein a ceramic molded body containing ceramic powder and yttria is produced, and then the above-mentioned ceramic is produced. It is characterized in that the molded body is fired in a mixed atmosphere of CO and N ₂ .

When firing is performed in a mixed gas of CO and nitrogen, CO is adsorbed on the thin oxide layer on the surface of the ceramic substrate and yttrium is less likely to volatilize, and yttrium and nitrogen are separated on the surface of the ceramic substrate. Reacting to produce yttrium nitride. Further, when the CO concentration is high, it is considered that yttrium carbide is generated in addition to yttrium nitride. These yttrium compounds can be detected by fluorescent X-ray analysis. FIG. 8A is a photomicrograph of the surface of a ceramic substrate manufactured by the method for manufacturing a ceramic substrate of the present invention. In FIG. 8A, it can be seen that yttrium compounds (portions that appear white) are dispersed and scattered in an island shape. (B) is an enlarged photograph of the part that looks white. Further, (c) is the analysis result of the fluorescent X-ray test in this portion. From this analysis result, it can be seen that Y, Al, C, N, and O are present in the white portion. Since Al is presumed to be caused by the ceramic substrate, this white portion is Y
It is considered to be a nitride, a carbide, or an oxide of.

According to the method for manufacturing a ceramic substrate of the present invention, a layer made of an yttrium compound which is not easily corroded by a reactive gas or a halogen gas can be formed on the surface of the ceramic substrate, so that it has excellent corrosion resistance. A ceramic substrate that can be manufactured and that can sinter the ceramic particles sufficiently, so that it does not cause cracks or the like even when subjected to vibration or thermal shock, and has excellent durability. The substrate can be manufactured. Further, no cracks are generated in the manufactured ceramic substrate.

It is desirable that the conductor is a resistance heating element, and the ceramic substrate functions as a hot plate. This is because the structure in which the yttrium compound layer is formed on the surface of the ceramic substrate is particularly desirable at high temperatures. The resistance heating element may be formed in a layered form or a linear body.

Further, it is preferable that the conductor is an electrostatic electrode and the ceramic substrate functions as an electrostatic chuck. This is because the electrostatic chuck is often used in a corrosive atmosphere, and the structure in which the layer made of the yttrium compound is formed on the surface of the ceramic substrate is optimal.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below with reference to the embodiments. The present invention is not limited to this description.

First, the ceramic substrate for semiconductor manufacturing / inspection equipment of the present invention will be described. The ceramic substrate of the present invention is a ceramic substrate in which a conductor is provided, and a layer made of a compound of yttrium is dispersed in an island shape on the surface of the ceramic substrate. It is what

Since the ceramic substrate of the present invention has a layer of a yttrium compound dispersedly formed on the surface thereof, the ceramic substrate can be easily exposed to a reactive gas or a halogen gas for a long period of time. It has excellent corrosion resistance without being corroded by. The yttrium compound is excellent in corrosion resistance against reactive gas and halogen gas, and when a layer made of such an yttrium compound is formed dispersed on the surface of the ceramic substrate, the yttrium compound is formed. Since the layer made of (2) functions as a protective film for the ceramic substrate, the ceramic substrate of the present invention has excellent corrosion resistance. The compound of such yttrium is not particularly limited, and examples thereof include yttrium nitride (YN) and yttrium carbide (YC ₂ ).
Etc. can be mentioned.

The layer made of the yttrium compound may be formed on the upper surface of the ceramic substrate, or the layer formed inside the ceramic substrate may be exposed. In other words, it is sufficient if it is exposed on the surface. In addition, if it is completely covered, the thermal conductivity of the surface is lowered and the temperature distribution becomes large, which is not preferable. It must be distributed in an island shape.

When the conductor formed inside the ceramic substrate of the present invention is a resistance heating element, the ceramic substrate functions as a hot plate.

FIG. 1 is a plan view schematically showing a hot plate which is an example of the ceramic substrate of the present invention.
[Fig. 2] is a partially enlarged cross-sectional view schematically showing a part of the ceramic substrate shown in Fig. 1.

In this hot plate 100, the yttrium compound layer 10 is dispersed in an island shape on the ceramic substrate 11 formed in a disk shape, and the yttrium compound layer 10 is formed inside the ceramic substrate 11 to form a circle on the outermost periphery. A resistance heating element 12 having a repeating pattern of bent lines divided in the circumferential direction.
a to 12h, resistance heating elements 12i to 12l formed on the inner circumference thereof in the same repeating pattern of bending lines, and resistance heating elements 12m to 12 formed on the inner circumference thereof in a concentric shape.
A resistance heating element 12 composed of p and p is formed.
Further, external terminals 13 having a T-shaped cross section, which serve as input / output terminals, are connected to both ends of the resistance heating elements 12 a to 12 p through through holes 130.

Further, a through hole 15 for inserting the lifter pin 16 is provided in a portion near the center of the ceramic substrate 11.
Is formed, and further, on the bottom surface of the ceramic substrate 11,
A bottomed hole 14 for inserting the temperature measuring element is formed.

The lifter pin 16 is designed so that an object to be processed such as a silicon wafer can be placed on the lifter pin 16 and moved up and down, whereby the silicon wafer can be transferred to a transfer machine (not shown) or transferred. It is possible to receive a silicon wafer from the device, heat the silicon wafer by placing it on the heating surface of the ceramic substrate 11 or supporting and heating the silicon wafer in a state of being separated from the heating surface by 50 to 2000 μm. It has become.

Further, the ceramic substrate 11 is provided with a through hole or a recess, and after inserting a support pin having a pointed or hemispherical tip into the through hole or the recess, the support pin is slightly projected from the ceramic substrate 11. Alternatively, the silicon wafer may be heated in a state of being separated from the heating surface by 50 to 2000 μm by supporting the silicon wafer with the support pins fixed in this state.

The yttrium compound layer 10 is dispersed and formed in an island shape on the surface of the ceramic substrate 11. Examples of the yttrium compound include yttrium nitride (YN) and yttrium carbide (YC ₂ ).

The thickness of the yttrium compound layer 10 is not particularly limited, but is preferably about 0.01 to 500 μm. If the thickness of the yttrium compound layer 10 is less than 0.01 μm, the corrosion resistance of the ceramic substrate 11 may be poor. On the other hand, if the thickness of the yttrium compound layer 10 exceeds 500 μm, the adhesion to the ceramic substrate 11 may be poor. May deteriorate and peel off.

Examples of the ceramic material forming the ceramic substrate 11 include nitride ceramics, carbide ceramics, oxide ceramics and the like. Of these, nitride ceramics are preferable. This is because the thermal conductivity is high. Aluminum nitride is most preferable among the nitride ceramics. Thermal conductivity is 180W
/ M · K, which is the highest.

The brightness of the ceramic substrate 11 is JIS Z.
The value based on the standard of 8721 is preferably N6 or less. This is because those having such brightness are excellent in radiant heat amount and concealing property. Further, the hot plate constituted by such a ceramic substrate enables accurate surface temperature measurement by a thermoviewer.

Here, the lightness N is such that the ideal lightness of black is 0 and the ideal lightness of white is 10, and the brightness of the color is between the lightness of black and the lightness of white. Each color is divided into 10 so that the perception of is equal to each other, and is displayed by symbols N0 to N10. And the actual measurement is N0-N
The color chart corresponding to 10 is compared. In this case, the first decimal place is 0 or 5.

Ceramic substrate 1 having such characteristics
No. 1 is obtained by incorporating 100 to 5000 ppm of carbon in the substrate. Carbon includes amorphous ones and crystalline ones. Amorphous carbon can suppress a decrease in volume resistivity of a substrate at a high temperature,
Since crystalline carbon can suppress a decrease in the thermal conductivity of the substrate at high temperatures, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

Amorphous carbon is, for example, C, H or O.
It can be obtained by calcining a hydrocarbon consisting only of saccharides, preferably sugar, in air, and graphite powder or the like can be used as the crystalline carbon.
Carbon can be obtained by thermally decomposing an acrylic resin in an inert atmosphere and then applying heat and pressure. By changing the acid value of this acrylic resin, crystalline (non-crystalline) properties can be obtained. The degree of can be adjusted.

The ceramic substrate 11 preferably has a disc shape as shown in FIG. 1, and its diameter is 200 mm.
The above is preferable, and 250 mm or more is optimal. This is because the disk-shaped ceramic substrate 11 is required to have a uniform temperature, but a substrate having a larger diameter tends to have a non-uniform temperature.

The thickness of the ceramic substrate 11 is preferably 50 mm or less, more preferably 20 mm or less. Also, 1
~ 5 mm is optimal. This is because if the thickness is too thin, warpage is likely to occur when heating at high temperatures, while if it is too thick, the heat capacity becomes too large and the temperature raising / lowering characteristics deteriorate.

The porosity of the ceramic substrate 11 is 0.
Alternatively, it is preferably 5% or less. The porosity is measured by the Archimedes method. This is because it is possible to suppress the decrease in thermal conductivity at high temperatures and the occurrence of warpage.

The pattern of the resistance heating element 12 is shown in FIG.
In addition to those consisting of the repeated pattern of bending lines and the pattern of concentric circles shown in, spiral shape, eccentric circle shape,
A combination of a concentric circle shape and a bent line shape can be mentioned. The thickness of the resistance heating element 12 is 1 to 50.
μm is preferable, and its width is preferably 5 to 20 μm.

The resistance value can be changed by changing the thickness or width of the resistance heating element 12, but this range is the most practical. The resistance value of the resistance heating element 12 increases as the thickness thereof decreases and the width thereof decreases.

The resistance heating element 12 has a rectangular cross section, an elliptical cross section,
It may have a spindle shape or a kamaboko shape, but it is preferably flat. This is because the flat surface is more likely to radiate heat toward the heating surface, so that the amount of heat transfer to the heating surface can be increased and the temperature distribution on the heating surface is less likely to occur. In addition,
The resistance heating element 12 may have a spiral shape.

In the hot plate 100, the number of circuits consisting of the resistance heating element 12 is not particularly limited as long as it is 1 or more, but it is desirable to form a plurality of circuits in order to uniformly heat the heating surface. .

When the resistance heating element 12 is formed inside the ceramic substrate 11, its forming position is not particularly limited, but at least one layer is formed at a position from the bottom surface of the ceramic substrate 11 to 60% of its thickness. Is preferred. This is because the heat diffuses while the heat propagates to the heating surface, and the temperature on the heating surface tends to be uniform.

The resistance heating element 1 is provided inside the ceramic substrate 11.
When forming 2, the conductor paste made of metal or conductive ceramic is preferably used. That is, when the resistance heating element 12 is formed inside the ceramic substrate 11,
After the conductor paste layer is formed on the green sheet, the green sheets are laminated and fired to produce the resistance heating element 12 inside.

The conductor paste is not particularly limited, but it is preferable that the conductor paste contains metal particles or a conductive ceramic in order to secure conductivity, and contains a resin, a solvent, a thickener and the like.

As the metal particles, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. This is because these metals are relatively difficult to oxidize and have a resistance value sufficient to generate heat.

As the above-mentioned conductive ceramic, for example,
Examples thereof include tungsten and molybdenum carbides.
These may be used alone or in combination of two or more. The particle size of these metal particles or conductive ceramic particles is preferably 0.1 to 100 μm. This is because if it is less than 0.1 μm and too fine, it is easily oxidized, while if it exceeds 100 μm, it becomes difficult to sinter and the resistance value increases.

Even if the shape of the metal particles is spherical,
It may be flaky. When these metal particles are used, they may be a mixture of the above-mentioned spherical material and the above-mentioned scaly material. When the metal particles are scaly particles or a mixture of spherical particles and scaly particles, it becomes easier to hold the metal oxide between the metal particles, and the resistance heating element 12 and the ceramic substrate 1
This is advantageous because it is possible to secure the adhesion to 1 and to increase the resistance value.

The resin used for the conductor paste is
For example, epoxy resin, phenol resin, etc. may be mentioned. Examples of the solvent include isopropyl alcohol and the like. Examples of the thickener include cellulose and the like.

A through hole 130 is formed just below the end of the resistance heating element 12. The through hole 1
A bag hole 190 is provided between the base plate 30 and the bottom surface of the ceramic substrate 11.
Is formed, and the through hole 130 is exposed to the outside. The external terminal 13 is inserted into the bag hole 190, and is connected to the through hole 130 via solder, a brazing material (not shown), or the like.

The through hole 130 is made of a metal such as tungsten or molybdenum, or a carbide thereof, and its diameter is preferably 0.1 to 10 mm. This is because it is possible to prevent cracks and distortions while preventing disconnection.

The size of the bag hole 190 is not particularly limited as long as the head portion of the external terminal 13 can be inserted.

The material of the external terminal 13 is not particularly limited, and examples thereof include metals such as nickel and kovar, and the shape thereof is preferably T-shaped in cross section. Further, the size thereof is not particularly limited because it is appropriately adjusted depending on the size of the ceramic substrate 11 used, the size of the resistance heating element 12, etc., but the diameter of the shaft portion is 0.5 to 5 m.
m, and the length of the shaft portion is preferably about 1 to 10 mm. A socket having a conductive wire is attached to such an external terminal 13, and the conductive wire is connected to a power source or the like.

Further, a temperature measuring element such as a thermocouple having a lead wire is inserted in the bottomed hole 14 and sealed with a heat resistant resin, ceramic (silica gel or the like) and the like. This is because it is possible to control the temperature of the hot plate 100 according to the present invention by measuring the temperature of the resistance heating element 12 with a temperature measuring element such as a thermocouple and changing the voltage and the amount of current based on the data. .

The size of the joining portion of the lead wire of the thermocouple is preferably equal to or larger than the wire diameter of each lead wire, and 0.5 mm or less. With such a configuration, the heat capacity of the joint portion is reduced, and the temperature is converted into a current value accurately and quickly. Therefore, the temperature controllability is improved and the temperature distribution on the heating surface 11a of the wafer is reduced. Examples of the thermocouple include K-type, R-type, B-type, E-type, J-type, and T-type thermocouples, as described in JIS-C-1602 (1980).

In addition to the thermocouples described above, examples of the temperature measuring means of the hot plate 100 according to the present invention include platinum temperature measuring resistors, temperature measuring elements such as thermistors, and optical means such as thermoviewers. There is also a temperature measuring means using.

When the above-mentioned thermoviewer is used, the temperature of the heating surface of the ceramic substrate 11 can be measured, and the temperature of the surface of an object to be heated such as a silicon wafer can be directly measured. The accuracy of temperature control is improved.

The hot plate 100 as described above is usually used in a state of being arranged in a supporting container. Figure 3
It is sectional drawing which shows the mode that the hot plate 100 was arrange | positioned in such a support container.

The support container 20 is composed of a heat shield member 26 having a substantially cylindrical shape with a bottom and a support member 21 having an L-shaped cross section placed on the heat shield member 26. The support member 21 is made of ceramic. A heat insulating ring 25, which is L-shaped in cross section and fitted with the substrate 11, is fitted therein. In addition, the ceramic substrate 11
The support member 2 using the bolt 28 and the pressing metal fitting 27.
1 and the heat shield member 26.

A guide tube 22 communicating with the through hole 15 is provided in the portion of the ceramic substrate 11 where the through hole 15 is formed. Further, a plurality of refrigerant supply pipes 29 are arranged in the bottom plate portion of the heat shield member 26, and a plurality of refrigerant discharge ports 26a for discharging the refrigerant supplied from the refrigerant supply pipes 29 into the support container 20 to the outside. Individually provided, the heated hot plate 100 can be quickly cooled.

Inside such a support container 20, the external terminal 13 connected to the resistance heating element of the ceramic substrate 11 is connected.
Is connected to a conductive wire 18 via a socket 19, and the conductive wire 18 is drawn out from the bottom plate portion of the heat shield member 26 and connected to a power source or the like (not shown). Further, the lead wire 160 connected to the temperature measuring element 17 inserted in the bottomed hole 14 is also pulled out from the bottom plate portion of the heat shield member 26 and connected to an external control device (not shown) or the like.

By the way, the support container 20 having such a structure.
Since the inside thereof is not completely sealed, when a processing object such as a silicon wafer 39 is placed on the ceramic substrate 11 and a reactive gas or a halogen gas is blown to the silicon wafer 39, the supporting container The above-mentioned reactive gas or halogen gas may enter the inside of 20. However, the external terminal 13, the conductive wire 18, and the socket 19 are corroded when exposed to the reactive gas, the halogen gas, or the like. It is desirable to take measures so as not to directly contact the socket 19.

As such a measure, for example, a method of accommodating the external terminal 13, the conductive wire 18 and the socket 19 inside a ceramic cylindrical body can be mentioned.
The ceramic that constitutes the tubular body is not particularly limited, and examples thereof include oxide ceramics such as aluminum nitride, alumina, silica, mullite, and cordierite, silicon nitride, and silicon carbide. Further, as another measure, for example, a method of coating the external terminal 13, the conductive wire 18, and the socket 19 with a resin or the like having excellent corrosion resistance can be mentioned.

Further, it is desirable that the lead wire 160 connected to the temperature measuring element 17 is inserted through an insulator (not shown) so that the reactive gas, the halogen gas and the like do not come into direct contact therewith. This is for preventing the lead wire from being corroded and breaking.

Therefore, the hot plate 100 arranged in the support container 20 in such a state has the ceramic substrate 1
The yttrium compound layer 10 is formed on the surface of 1.
Since the external terminal 13, the conductive wire 18, the socket 19 and the lead wire 160 are protected by a cylindrical body made of ceramics, an insulator, etc. It will not be corroded and will have excellent corrosion resistance.

The hot plate 100 according to the present invention has one
It is desirable to use at a temperature of 00 ° C or higher, and more desirably to use at a temperature of 200 ° C or higher.

The ceramic substrate of the present invention is used for manufacturing semiconductors and inspecting semiconductors, and specific examples thereof include an electrostatic chuck, a susceptor, a hot plate (ceramic heater) and the like. .

The above-mentioned hot plate is a device in which only the resistance heating element is provided inside the ceramic substrate, whereby the object to be processed such as a silicon wafer is placed on or separated from the surface of the ceramic substrate. It can be heated to a predetermined temperature or washed.

When the conductor formed inside the ceramic substrate of the present invention is an electrostatic electrode, the ceramic substrate functions as an electrostatic chuck. FIG. 4A is a vertical sectional view schematically showing such an electrostatic chuck.
(B) is the sectional view on the AA line. In this electrostatic chuck 300, chuck positive and negative electrode electrostatic layers 32 and 33 are embedded inside a ceramic substrate 31, and through holes 36 are provided in these chuck positive and negative electrode electrostatic layers 32 and 33. Ceramic dielectric film 34 on the electrostatic electrode
Are formed. Further, a resistance heating element 320 is provided inside the ceramic substrate 31, and the silicon wafer 39
It is possible to heat an object to be processed such as a through hole 360 at the end of the resistance heating element 320.
Is provided. Although not shown, a layer made of a compound of yttrium is formed on the surface of the ceramic substrate 31, and a bag hole is formed on the bottom surface of the ceramic substrate 31 so that the through holes 36 and 360 are exposed. The external terminal is formed in this bag hole, and is connected to the through holes 36 and 360 via a solder layer or the like. In addition,
An RF electrode may be embedded in the ceramic substrate 31 if necessary.

Further, as shown in (b), the electrostatic chuck 300 is usually formed in a circular shape in plan view, and the semi-arcuate portion 3 shown in (b) is formed inside the ceramic substrate 31.
Chuck positive electrode electrostatic layer 32 comprising 2a and comb tooth portion 32b
And the chuck negative electrode electrostatic layer 33, which is also composed of the semi-circular portion 33a and the comb tooth portion 33b, is formed by the comb tooth portions 32b and 3b.
It is arranged so as to face 3b.

The chuck positive and negative electrode electrostatic layers 32 and 33 are made of noble metal (gold, silver, platinum, palladium), lead, tungsten,
A metal such as molybdenum or nickel, or a conductive ceramic such as a carbide of tungsten or molybdenum is preferable. These may be used alone or in combination of two or more.

As in the case of the hot plate 100 described above, the surface of the ceramic substrate 31 of this electrostatic chuck 300 is formed with a layer made of a compound of yttrium, which is inserted into the above-mentioned bag hole and the through hole. The external terminal connected to is connected to the conductive wire via the socket. Further, as in the case of the hot plate 100 described above, the external terminals, the sockets, the conductive wires and the like are treated so as not to come into direct contact with the reactive gas or the halogen gas, and as shown in FIG. It is used in a state where it is arranged in a different support container.

When operating such an electrostatic chuck 300, the resistance heating element 320 and the electrostatic electrodes 32, 3 are used.
A voltage is applied to each. As a result, the silicon wafer 39 placed on the electrostatic chuck 30 is heated to a predetermined temperature and electrostatically attracted to the ceramic substrate 31. The electrostatic chuck may not necessarily include the resistance heating element 320.

FIG. 5 is a horizontal sectional view schematically showing an electrostatic electrode formed on a ceramic substrate of another electrostatic chuck. In the electrostatic chuck 70 shown in FIG. 5, a semi-circular chuck positive electrode electrostatic layer 72 and a chuck negative electrode electrostatic layer 73 are formed inside a ceramic substrate 71.

FIG. 6 is a horizontal sectional view schematically showing an electrostatic electrode formed on a ceramic substrate of yet another electrostatic chuck. In this electrostatic chuck 80, a chuck positive electrode electrostatic layer 82a, 82b and a chuck negative electrode electrostatic layer 83a, 8 having a shape obtained by dividing a circle into four inside a ceramic substrate 81.
3b is formed. Further, two chuck positive electrode electrostatic layers 82a and 82b and two chuck negative electrode electrostatic layers 83 are provided.
a and 83b are formed so as to intersect with each other. In the case of forming an electrode having a shape in which a circular electrode is divided, the number of divisions is not particularly limited and may be 5 or more, and the shape thereof is not limited to a fan shape.

Next, a method of manufacturing the ceramic substrate of the present invention will be described. A method of manufacturing a ceramic substrate according to the present invention is a method of manufacturing a ceramic substrate having a conductor provided therein, wherein a ceramic molded body containing ceramic powder and yttria is manufactured, and then the ceramic molded body is subjected to CO And firing in a mixed atmosphere consisting of N ₂ and N ₂ .

In the method for producing a ceramic substrate of the present invention, a ceramic compact containing ceramic powder and yttria is fired in a mixed atmosphere of CO and N _2, so that a layer of yttrium compound is formed on the surface of the ceramic substrate. It is possible to produce a ceramic substrate which is excellent in corrosion resistance as well as in which the ceramic particles are sufficiently sintered and which is excellent in durability. Here, the ceramic substrate manufactured by the above-described manufacturing method is corrosion resistant,
Also, it is considered that the durability was poor because of the following reasons.

That is, when a ceramic compact containing ceramic powder and yttria is fired in an environment surrounded by BN, the yttria gradually moves toward the surface of the ceramic compact as the sintering of the ceramic particles progresses. To do.
In the above-mentioned manufacturing method, when firing the ceramic molded body, it was carried out in an atmosphere of an inert gas such as N ₂ , but this inert gas atmosphere contains a carbon source such as CO. Since it did not exist, yttria that had moved to the surface of the ceramic molded body did not react with N _2, and B
It will be absorbed by N. That is, on the surface of the ceramic substrate obtained by the above-described manufacturing method, a layer made of a compound of yttrium excellent in corrosion resistance to reactive gas and halogen gas is not formed, so that the corrosion resistance of the ceramic substrate to be manufactured is inferior. It is thought that it was. However, in the method for manufacturing a ceramic substrate of the present invention, a ceramic compact containing ceramic powder and yttria is
Since firing is performed in a mixed atmosphere of O and N _2, the yttria that has moved to the surface of the ceramic molded body reacts with N ₂ in the mixed atmosphere by using the CO as a reducing agent to form a layer made of a yttrium compound. Is formed. Since this reaction occurs on the surface of the ceramic molded body, the surface of the obtained ceramic substrate is in a state in which the layer made of the above-mentioned yttrium compound is formed. As described above, the layer made of the yttrium compound is excellent in corrosion resistance to reactive gas and halogen gas,
The ceramic substrate obtained by the method for manufacturing a ceramic substrate of the present invention has excellent corrosion resistance.

Further, in the above-mentioned manufacturing method, since the sintering aid necessary for sufficiently sintering the ceramic particles is insufficient near the surface of the ceramic molded body,
It is considered that the sintering of the ceramic particles in this portion becomes insufficient and cracks are easily generated in the obtained ceramic substrate. Even when the obtained ceramic substrate is not cracked, the ceramic particles in the vicinity of the surface of the ceramic substrate may not be sufficiently sintered, so that the ceramic substrate may be easily subjected to vibration or thermal shock. It is probable that a crack had occurred. However, in the method for manufacturing a ceramic substrate of the present invention, when firing the ceramic molded body, since a layer made of a compound of yttrium is formed on the surface during firing, it is difficult for yttria to escape from the ceramic molded body. Thus, it is possible to obtain a ceramic substrate that is sufficiently sintered and has excellent durability.

As an example of the method for manufacturing a ceramic substrate of the present invention, a method for manufacturing a hot plate will be described below with reference to FIG.
Will be described with reference to. 7A to 7D are cross-sectional views schematically showing a part of a method for manufacturing a hot plate having a resistance heating element inside a ceramic substrate.

(1) Green Sheet Manufacturing Step First, a ceramic powder and yttria are mixed with a binder, a solvent and the like to prepare a paste, which is used to manufacture a green sheet. It is desirable that yttria is contained in the green sheet in an amount of about 0.1 to 10% by weight, and crystalline or amorphous carbon may be added to the green sheet. Further, the green sheet may contain, for example, CaO, Na ₂ O, Li ₂ O, Rb ₂ O ₃ or the like in addition to the yttria. This is because these compounds also function favorably as sintering aids.

The binder is preferably at least one selected from acrylic binders, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, the solvent is preferably at least one selected from α-terpineol and glycol.

The paste obtained by mixing these is formed into a sheet by the doctor blade method to obtain the green sheet 5
Create 0. The thickness of the green sheet 50 is 0.1
5 mm is preferable. Next, a green sheet having a portion 630 to be a through hole for connecting the end portion of the resistance heating element and the external terminal is produced.

Further, a portion 6 serving as a through hole into which a lifter pin for carrying an object to be processed such as a silicon wafer is inserted.
5, a through hole portion (not shown) for inserting a support pin for supporting the silicon wafer, and a bottomed portion 64 for embedding a temperature measuring element such as a thermocouple are formed.
The through holes and the bottomed holes may be processed after forming a green sheet laminated body described later or after forming the laminated body and firing it. In order to form the layer made of the yttrium compound on the inner wall of the bottom hole, it is desirable to previously form the through hole portion 65 and the bottomed hole portion 64 in the green sheet as described above. .

The portion 630 to be a through hole may be filled with the above paste containing carbon. This is because the carbon in the green sheet reacts with the tungsten and molybdenum filled in the through holes to form these carbides.

(2) Step of printing the conductor paste on the green sheet A conductor paste containing a metal paste or a conductive ceramic is printed on the green sheet on which the through holes 630 are formed to form the conductor paste layer 62. To do.
The conductive paste contains metal particles or conductive ceramic particles.

The average particle size of the metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. This is because it is difficult to print the conductor paste when the average particle size is less than 0.1 μm or exceeds 5 μm.

Examples of such a conductor paste include, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol. And a composition (paste) in which 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol is mixed.

(3) Laminating Step of Green Sheets Above and below the green sheets on which the conductor paste layer 62 is printed,
A plurality of green sheets 50 on which no conductor paste is printed are laminated (FIG. 7A). At this time, the number of the green sheets 50 stacked on the upper side of the green sheet printed with the conductor paste layer 62 is the green sheet 50 stacked on the lower side.
The number of the resistance heating elements to be manufactured is eccentric in the direction of the bottom surface. Specifically, the number of stacked upper green sheets 50 is preferably 20 to 50, and the number of stacked lower green sheets 50 is preferably 5 to 20.

(4) Firing step of the green sheet laminated body The green sheet laminated body is heated to obtain the green sheet 5.
0 and the conductor paste layer 62 inside are sintered to manufacture the ceramic substrate 11 and the resistance heating element 12 (FIG. 7).
(B)). Here, the firing of the green sheet laminate is performed in a mixed atmosphere of CO and N ₂ . The heating temperature at this time is preferably 1000 to 2000 ° C. At this time, the concentration of CO in the mixed atmosphere is preferably 1 to 50 vol%. When the CO concentration is less than 1 vol%, it is difficult to form an island-shaped layer made of yttrium nitride, while when the CO concentration exceeds 50 vol%, the CO layer formed on the surface is a barrier. Therefore, since the reaction between yttrium and nitrogen is hindered, it becomes difficult to form an island-shaped layer made of a yttrium nitride. By performing this firing step, the island-shaped yttrium compound layer 10 is formed on the surface (including the bottomed holes 14 and the inner walls of the through holes 15) of the obtained ceramic substrate 11. When the island-shaped yttrium compound layer 10 is formed on the surface of the ceramic substrate 11, the surface of the ceramic substrate 11 turns red. Therefore, whether or not the yttrium compound layer 10 is formed can be visually confirmed. .

Next, a bag hole 190 is formed on the bottom surface of the ceramic substrate 11 by drilling, blasting such as sandblasting, and the through hole 130 is exposed to the outside (FIG. 7C).

(7) Attachment of terminals, etc. The external terminal 13 is inserted into the bag hole 190 formed on the bottom surface of the ceramic substrate 11 via solder or a brazing material, heated and reflowed to pass the external terminal 13 through. Hall 1
30 (FIG. 7 (d)). The heating temperature is preferably 90 to 450 ° C. in the case of soldering, and 900 to 1100 ° C. in the case of processing with a brazing material.

Next, the external terminal 13 is connected to a conductive wire 18 connected to a power source via a socket 19 (see FIG. 3). Further, by inserting a thermocouple or the like as a temperature measuring element into the formed bottomed hole and sealing with a heat resistant resin or the like, a hot plate having a ceramic substrate having a resistance heating element therein is manufactured. You can

In this hot plate, a semiconductor wafer such as a silicon wafer is placed on a ceramic substrate, or the silicon wafer or the like is held by lifter pins or support pins and then heated or cooled. While performing, operations such as washing can be performed.

When the hot plate is manufactured, the electrostatic chuck can be manufactured by providing the electrostatic electrode inside the ceramic substrate. However, in this case,
It is necessary to form a through hole for connecting the electrostatic electrode and the external terminal, but it is not necessary to form a through hole for inserting the support pin.

When an electrode is provided inside the ceramic substrate, a conductor paste layer to be an electrostatic electrode may be formed on the surface of the green sheet as in the case of forming a resistance heating element.

The present invention will be described in more detail below.

【Example】

(Example 1) Production of hot plate (see FIGS. 1, 2 and 7) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O)
₃ : Yttria, average particle size 0.4 μm) 4 parts by weight, acrylic resin binder 11.5 parts by weight, dispersant 0.5 parts by weight, and a paste prepared by mixing 53 parts by weight of alcohol consisting of 1-butanol and ethanol. The green sheet having a thickness of 0.47 mm and a diameter of 330 mm was manufactured by using the doctor blade method.

(2) Next, this green sheet is heated to 80 ° C.
After being dried for 5 hours, the through hole 6 for inserting the lifter pin for carrying the silicon wafer, etc. 6
5, a portion 64 to be a bottomed hole and a portion 630 to be a through hole were formed by punching.

(3) A conductor obtained by mixing 100 parts by weight of tungsten carbide particles having an average particle size of 1 μm, 3.0 parts by weight of an acrylic binder, 3.5 parts by weight of an α-terpineol solvent and 0.3 part by weight of a dispersant. Paste A was prepared.

Tungsten particles 100 having an average particle size of 3 μm
By weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant were mixed to prepare a conductor paste B.

This conductor paste A was printed by screen printing on a green sheet having a portion 630 to be a through hole, to form a conductor paste layer 62 for a resistance heating element. The printed pattern was a pattern composed of bent lines and concentric circles as shown in FIG. 1, the conductor paste layer 62 had a width of 10 mm and a thickness of 12 μm.

Further, the conductor paste B was filled in the portion 630 to be the through hole. 37 green sheets on which the conductor paste is not printed are stacked on the green sheet on which the conductor paste layer 62 is printed, and 13 green sheets on which the conductor paste is not printed are stacked below the green sheet. , 130 ° C., and a pressure of 8 MPa.

(4) Next, the obtained laminate was treated with nitrogen gas:
40 vol% and CO gas: degassed at 600 ° C. for 5 hours in a mixed gas consisting of 60 vol%, 1890 ° C., 10
By firing for a period of time, an aluminum nitride substrate having a thickness of 3 mm and a diameter of 230 mm was obtained. On the surface of this aluminum nitride substrate, as shown in FIGS. 8A and 8B, layers of yttrium nitride, yttrium carbide, and yttrium oxide having a thickness of 10 μm were dispersed and formed in an island shape. Further, inside the aluminum nitride substrate, a resistance heating element having a thickness of 6 μm and a width of 10 mm, and a diameter of 3 mm
Through hole 130 was formed.

(5) Next, the bottom of the aluminum nitride substrate obtained in (4) was hollowed out to form a blind hole 190 by cutting out the portion where the through hole 13 was formed.

(6) Next, the silver solder (A
g: 40% by weight, Cu: 30% by weight, Zn: 28% by weight, Ni: 1.8% by weight, balance: other elements, reflow temperature: 800 ° C.), and the external terminal 13 was attached. Then, the conductive wire 18 was connected to the external terminal 13 via the socket 19.

(7) Then, a thermocouple for temperature control is inserted into the bottomed hole 14 and filled with polyimide resin.
By curing at 0 ° C. for 2 hours, an aluminum nitride substrate having a resistance heating element and a through hole provided therein and functioning as a hot plate was manufactured.

(Example 2) Manufacturing of electrostatic chuck (Fig. 4)
(1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O)
₃ : Yttria, average particle size 0.4 μm) 4 parts by weight, acrylic resin binder 11.5 parts by weight, dispersant 0.5 parts by weight, and a paste prepared by mixing 53 parts by weight of alcohol consisting of 1-butanol and ethanol. The green sheet having a thickness of 0.47 mm and a diameter of 340 mm was produced by using the doctor blade method.

(2) Next, this green sheet is heated to 80 ° C.
After drying for 5 hours, the unprocessed green sheet is punched, through holes for through holes for connecting electrostatic electrodes and external terminals, and resistance heating elements and external terminals are connected. A through-hole through hole for this purpose, and a green sheet provided with a portion to be a bottomed hole for inserting the temperature measuring element were produced.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, and an acrylic binder of 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A. Further, a conductor paste B was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant.

(4) Conductor paste A is printed by a screen printing method on the surface of the green sheet provided with through holes for through holes for connecting the resistance heating element and the external terminals to form a resistance heating element. The layers were printed. Further, a conductor paste layer having an electrostatic electrode pattern of the shape shown in FIG. 4B was formed on the green sheet provided with through holes for through holes for connecting the electrostatic electrodes and external terminals.

Further, the through holes for through holes for connecting the electrostatic electrodes and the external terminals and the through holes for through holes for connecting the resistance heating element and the external terminals were filled with the conductor paste B.

Next, the green sheets that had been subjected to the above treatment were laminated. First, on the upper side (heating surface side) of the green sheet on which the conductor paste layer serving as the resistance heating element is printed, 34 green sheets in which only the portions to be the through holes 36 are formed are stacked, and the through holes are formed on the lower side thereof. 36, 3
Twelve green sheets each having a portion corresponding to 60 were formed. The green sheet on which the conductor paste layer composed of the electrostatic electrode pattern is printed is laminated on the uppermost part of the thus laminated green sheet, and two green sheets which have not been processed are further laminated on the green sheet. Thirteen
A laminated body was formed by pressure bonding at 0 ° C. and a pressure of 8 MPa.

(5) Next, the obtained laminate was treated with nitrogen gas:
In a mixed gas consisting of 10 vol% and CO gas: 90 vol%, degreasing was performed at 600 ° C. for 5 hours, and then 1890.
By firing at ℃ for 10 hours, thickness 3mm, diameter 23
A 0 mm aluminum nitride substrate was obtained. On the surface of this aluminum nitride substrate, layers of yttrium nitride and yttrium oxide having a thickness of 2 μm were dispersed and formed in an island shape. Further, inside the aluminum nitride substrate, a resistance heating element 32 having a thickness of 5 μm and a width of 2.4 mm is provided.
The chuck positive electrode electrostatic layer 32 and the chuck negative electrode electrostatic layer 33 having a thickness of 0 and 6 μm were formed.

(6) Next, a bag hole was formed by scooping out the portion where the through holes 36, 360 were formed on the bottom surface of the aluminum nitride substrate obtained in (5).

(7) Next, silver solder (Ag:
40% by weight, Cu: 30% by weight, Zn: 28% by weight, N
i: 1.8% by weight, balance: other elements, reflow temperature: 800 ° C.) was used to attach external terminals. Then, a conductive wire was connected to the external terminal via a socket.

(8) Then, a thermocouple for temperature control is inserted into the bottomed hole, filled with a polyimide resin, and cured at 190 ° C. for 2 hours, whereby an electrostatic electrode, a resistance heating element and An aluminum nitride substrate having a through hole and functioning as an electrostatic chuck was manufactured.

Comparative Example 1 Example 1 was repeated except that the green sheet laminate was fired in a nitrogen gas atmosphere.
An aluminum nitride substrate that functions as a hot plate was manufactured in the same manner as in. No layer of yttrium nitride or the like was formed on the surface of the obtained aluminum nitride substrate.

(Comparative Example 2) When firing a laminate of green sheets, four sides of the laminate were fixed with a mold made of BN, 1890 ° C., 15 MPa, 10 in a nitrogen gas atmosphere.
An aluminum nitride substrate functioning as a hot plate was manufactured in the same manner as in Example 1 except that hot pressing was performed under the conditions of time. No layer of yttrium nitride or the like was formed on the surface of the obtained aluminum nitride substrate, and cracks were generated on the surface of many aluminum nitride substrates.

(Comparative Example 3) Two green sheet laminates were prepared.
An aluminum nitride substrate was manufactured in the same manner as in Example 1 except that the surface of the aluminum nitride substrate was completely covered with the nitride, oxide, or carbide of yttrium by firing for 4 hours.

The following evaluation tests were conducted on the aluminum nitride substrates according to Examples 1 and 2 and Comparative Examples 1 to 3. The results are shown in Table 1 below. For the aluminum nitride substrate according to Comparative Example 2, the following evaluation test was performed on a substrate in which no crack was generated during manufacturing.

(1) Evaluation of Corrosion Resistance CF ₄ gas was blown to each aluminum nitride substrate, and the presence or absence of corrosion was visually observed.

(2) Heat Cycle Test After each aluminum nitride substrate was kept at 25 ° C., 450
A heat cycle test in which the process of heating to ℃ was repeated 1000 times was performed to confirm whether or not a crack was generated in the aluminum nitride substrate.

(3) Temperature Measurement of Heating Surface After heating each aluminum nitride substrate to 300 ° C., the temperature of the heating surface of the aluminum nitride substrate was measured by a thermoviewer (IR-162012-0012 manufactured by Nippon Datum Co., Ltd.) The temperature difference between the temperature and the maximum temperature was determined.

[0124]

[Table 1]

As is clear from the results shown in Table 1, the aluminum nitride substrates according to Examples 1 and 2 are not corroded by CF ₄ gas, and cracks are not generated even in the heat cycle test. There wasn't. on the other hand,
The surfaces of the aluminum nitride substrates according to Comparative Examples 1 and 2 were corroded by CF ₄ gas, and Comparative Example 2
The aluminum nitride substrate according to No. 2 had cracks generated by the heat cycle test. The aluminum nitride substrate according to Comparative Example 3 has excellent resistance to CF ₄ gas, but the temperature difference on the heating surface is as large as 15 ° C. Further, the aluminum nitride substrate was cracked due to the fact that the layer made of the yttrium compound was too thick.

[0126]

As described above, the ceramic substrate of the present invention is excellent in corrosion resistance because the layer made of the compound of yttrium is dispersed in the form of islands on the surface thereof,
Further, since the ceramic particles near the surface are also sufficiently sintered, they have excellent durability.

Since the method for producing a ceramic substrate of the present invention is as described above, it is possible to form a layer made of a compound of yttrium on the surface of the ceramic substrate and sinter the ceramic particles sufficiently. Therefore, a ceramic substrate having excellent corrosion resistance and durability can be manufactured.

[Brief description of drawings]

FIG. 1 is a plan view schematically showing a hot plate which is an example of a ceramic substrate of the present invention.

FIG. 2 is a partially enlarged sectional view of the ceramic substrate shown in FIG.

3 is a cross-sectional view schematically showing a state in which the hot plate shown in FIG. 1 is arranged in a support container.

FIG. 4A is a vertical cross-sectional view schematically showing a ceramic substrate that constitutes an electrostatic chuck which is an example of the ceramic substrate of the present invention, and FIG. 4B is a cross-sectional view taken along the line AA of FIG. is there.

FIG. 5 is a horizontal sectional view schematically showing another example of the electrostatic electrode embedded in the ceramic substrate.

FIG. 6 is a horizontal cross-sectional view schematically showing still another example of the electrostatic electrode embedded in the ceramic substrate.

7 (a) to 7 (d) are cross-sectional views schematically showing an example of a method for manufacturing a hot plate which is an example of the ceramic substrate of the present invention.

FIG. 8 (a) is a photomicrograph of the vicinity of the surface of a ceramic substrate manufactured by the method for manufacturing a ceramic substrate of the present invention, and FIG. 8 (b) is a partially enlarged photo of the same. (C) is a micrograph and a chart showing the results of a fluorescent X-ray analysis test on a part of the surface of the ceramic substrate.

[Explanation of symbols]

10 Yttrium compound layer 11 Ceramic substrate 12 Resistance heating element 13 External terminal 14 Bottomed hole 15 through holes 16 lifter pins 18 Conductive wire 19 socket 130 through hole 190 bag hole

Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/66 H01L 21/66 Z 5F031 H05B 3/10 C 5F045 3/20 393 H05B 3/10 3/74 3/20 393 C04B 35/58 104Y 3/74 H01L 21/302 BF term (reference) 3K034 AA02 AA04 AA16 AA22 AA34 BA06 BB06 BC03 BC12 BC16 FA14 HA04 HA10 JA01 JA10 3K092 PP20 QA05 QB30 QB45 QB62 QB74 RF30 RF26 RF11 RF17 RF26 RF11 RF27 RF11 RF26 RF11 RF27 RF11 RF26 RF11 RF27 RF26 RF11 RF17 RF26 RF26 RF17 RF26 RF11 RF26 RF11 RF26 RF11 RF27 RF11 RF27 RF11 RF27 RF11 RF26 RF27 RF26 RF11 RF27 RF11 RF27 RF11 RF27 RF11 RF17 RF17 RF26 RF11 RF17 RF27 RF11 RF27 RF11 RF17 RF27 RF11 RF17 RF27 RF11 RF27 RF26 RF27 RF17 RF17 RF27 RF27 RF11 RF17 RF27 RF11 RF27 RF27 RF11 RF27 RF27 RF11 RF17 RF27 RF27 RF27 VV40 4G001 BA09 BA36 BB08 BB36 BC54 BD04 BD37 BD38 4M106 AA01 BA01 CA31 CA60 DD30 DG30 DH44 DH56 DJ02 5F004 AA14 BA00 BB18 BB22 BB26 BD04 5F031 CA02 HA02 HA03 HA08 HA10 HA16 HA37 MA28 MA32 MA14 5F045EK33

Claims (6)

[Claims] 1. A ceramic substrate for a semiconductor manufacturing / inspection apparatus having a conductor provided therein, wherein layers of a yttrium compound are dispersed in an island shape on the surface of the ceramic substrate. A ceramic substrate for semiconductor manufacturing / inspection equipment. 2. The ceramic substrate for a semiconductor manufacturing / inspecting apparatus according to claim 1, wherein the conductor is a resistance heating element and functions as a hot plate. 3. The ceramic substrate for a semiconductor manufacturing / inspecting apparatus according to claim 1, wherein the conductor is an electrostatic electrode and functions as an electrostatic chuck. 4. A method of manufacturing a ceramic substrate for a semiconductor manufacturing / inspection apparatus, in which a conductor is provided, wherein a ceramic molded body containing ceramic powder and yttria is manufactured, and then the ceramic molded body is manufactured. CO and N ₂
A method of manufacturing a ceramic substrate for a semiconductor manufacturing / inspecting apparatus, which comprises firing in a mixed atmosphere comprising. 5. The method of manufacturing a ceramic substrate for a semiconductor manufacturing / inspecting apparatus according to claim 4, wherein the conductor is a resistance heating element, and the ceramic substrate functions as a hot plate. 6. The method for manufacturing a ceramic substrate for a semiconductor manufacturing / inspecting apparatus according to claim 4, wherein the conductor is an electrostatic electrode, and the ceramic substrate functions as an electrostatic chuck.