JP2001332560A - Semiconductor manufacturing and inspecting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing and inspecting device that can freely replace merely a ceramic substrate even after the ceramic substrate is mounted to a support container, and the external terminal of the ceramic substrate is connected to a lead wire. SOLUTION: In this semiconductor manufacturing and inspecting device where a ceramic substrate in which a conductor layer is arranged on the surface or at the inside is arranged in the support container, the external terminal is connected to the conductor layer, and a socket having the lead wire is mounted to the external terminal.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing / inspection apparatus mainly used for manufacturing or inspecting a semiconductor, such as a hot plate (ceramic heater), an electrostatic chuck, and a wafer prober.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing / inspection apparatus including an etching apparatus and a chemical vapor deposition apparatus, a heater or a wafer prober using a metal base material such as stainless steel or an aluminum alloy is used. I have been.

[0003] However, such a metal heater has the following problems.
There were the following problems. First, because it is made of metal,
The thickness of the heater plate must be as thick as about 15 mm. This is because, in a thin metal plate, warping, distortion, and the like are generated due to thermal expansion caused by heating, and the silicon wafer placed on the metal plate is damaged or tilted. However, when the thickness of the heater plate is increased, there is a problem that the weight of the heater increases and the heater becomes bulky.

In addition, the heating temperature is controlled by changing the voltage or current applied to the heating element. However, since the metal plate is thick, the temperature of the heater plate rapidly changes with changes in the voltage or current. There is also a problem that it is difficult to control the temperature without following.

In Japanese Patent Application Laid-Open No. 4-324276, aluminum nitride, which is a non-oxide ceramic having high thermal conductivity and high strength, is used as a substrate, and a heating element is formed in the aluminum nitride substrate. A ceramic heater has been proposed in which a through hole made of tungsten is connected to the heating element, and a dichrome wire (lead wire) is brazed to the through hole.

[0006]

However, in a ceramic heater having such a configuration, once a lead wire is once attached to the ceramic substrate, for example, when a problem occurs in the ceramic substrate, only the ceramic substrate is used. As described above, since the lead wires and the ceramic substrate are brazed as described above, it is not possible to replace only the ceramic substrate, and it is necessary to newly replace the lead wires and the like.

Further, a method of cutting all the brazed lead wires or removing the ceramic substrate and the lead wires by melting the brazing material again can be considered. However, such a method is time-consuming and costly. It is not preferable in terms of quality.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. Even after attaching a ceramic substrate to a supporting container and attaching leads or the like to external terminals of the ceramic substrate, only the ceramic substrate is attached. It is an object of the present invention to provide a semiconductor manufacturing / inspection apparatus capable of freely replacing a semiconductor device. Another object of the present invention is to provide a semiconductor manufacturing / inspection apparatus that can be suitably used as a hot plate, an electrostatic chuck, a wafer prober, or the like.

[0009]

The present invention relates to a semiconductor manufacturing / inspection apparatus in which a ceramic substrate having a conductor layer disposed on the surface or inside thereof is disposed in a support container. An external terminal is connected, and a socket having a lead wire is attached to the external terminal.

As described above, in the semiconductor manufacturing / inspection apparatus of the present invention, an external terminal is connected to a conductor layer disposed on the surface or inside of the ceramic substrate.
A socket having a lead wire is attached, and the lead wire is drawn out from a through hole in the bottom of the support container. Therefore, for example, when a problem or the like occurs in the ceramic substrate, it is possible to freely and repeatedly replace only the ceramic substrate by attaching and detaching the socket. Also, when the lead wire is joined with a brazing material, the brazing material is deteriorated due to stress due to thermal expansion and contraction during heating and cooling, and the lead wire may fall off. Since the lead wire is attached to the, it is possible to prevent such a drop.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor manufacturing / inspection apparatus according to the present invention is a semiconductor manufacturing / inspection apparatus in which a ceramic substrate having a conductor layer provided on the surface or inside thereof is provided in a support container. An external terminal is connected to the layer, and a socket having a lead wire is attached to the external terminal.

A semiconductor manufacturing / inspection apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a bottom view schematically showing an example of a ceramic heater (hereinafter also referred to as a hot plate) which is an embodiment of the semiconductor manufacturing / inspection apparatus of the present invention, and FIG. FIG.

The ceramic substrate 21 is formed in a disk shape, and the resistance heating element 22 is formed on the bottom surface of the ceramic substrate 21 in a concentric pattern. In addition, these resistance heating elements 22 are formed such that double concentric circles close to each other are one.
As a set of circuits, they are connected so as to form a single line, and external terminals 23 serving as input / output terminals are connected to both ends of the circuit.

The ceramic substrate 21 having such a structure is
It is fitted into the upper part of a cylindrical support container 92 via a heat insulating ring 91, is screwed by a connecting member 130 such as a bolt, and is fixed to the support container 92. Further, a bottom plate 94 is attached to a lower portion of the support container 92, and a refrigerant introduction pipe 95 is fixed to the bottom plate 94 so that cooling air or the like can flow into the inside of the support container 92. It has become. The bottom plate 94 may be formed integrally with the support container 92.

On the other hand, a socket 10 having a lead wire 14 is attached to the external terminal 23 connected to the resistance heating element 22, and this lead wire 14 is connected to the through hole 9 in the bottom plate.
4a, it is drawn out to the outside and is connected to a power supply (not shown).

Further, a through hole 25 for inserting a lifter pin 26 used for carrying a silicon wafer or the like is formed in a portion near the center, and a guide communicating with the through hole 25 below the through hole 25. A tube 99 is provided.

By using the lifter pins 26, a silicon wafer can be placed with a certain distance from the upper surface of the ceramic substrate, and heating can be performed. Further, a through-hole or a concave portion is formed in the ceramic substrate 21, and a pin having a spire or a hemispherical tip is inserted and fixed into the through-hole or the like while slightly protruding from the ceramic substrate 21. By placing the wafer, the silicon wafer can be placed with a certain distance from the upper surface of the ceramic substrate 21.

Further, on the bottom surface of the ceramic substrate 21,
A bottomed hole 24 for inserting a temperature measuring element 28 such as a thermocouple is formed, and a wiring 27 is led out from the temperature measuring element 28.
It is drawn out through the through hole 94a of the bottom plate. The socket 10 will be described in detail in the description of FIG. The components other than the ceramic heater will be described later in detail.

The external terminals 23 are not particularly limited, and include, for example, metals such as nickel and Kovar. The shape is preferably T-shaped in cross section. The size is not particularly limited because it is appropriately adjusted depending on the size of the ceramic substrate 21 to be used, the size of the resistance heating element 22, and the like, but the diameter of the shaft portion is 0.5 to 10 mm, and the length of the shaft portion is Is preferably 3 to 20 mm.

The external terminal 23 is connected to the resistance heating element 22 by solder or brazing material. As the above brazing material,
For example, silver braze, palladium braze, aluminum braze,
Gold wax and the like. As the gold solder, an Au-Ni alloy having excellent adhesion to tungsten is desirable.

The ratio of Au / Ni is [81.5-82.
5 (% by weight)] / [18.5 to 17.5 (% by weight)], and the thickness of the Au—Ni layer is preferably 0.1 to 50 μm. This is because the range is sufficient to secure the connection.
When used at a high temperature of 500 to 1000 ° C. under a high vacuum of 10 ⁻⁶ to 10 ⁻⁵ Pa, the Au—Cu alloy deteriorates.
The -Ni alloy is advantageous because it does not deteriorate over time. The total amount of impurity elements in the Au—Ni alloy is 1
When the amount is 00 parts by weight, the amount is desirably less than 1 part by weight.

FIG. 3A is a perspective view schematically showing an example of the socket 10 used in the ceramic heater of FIGS. 1 and 2, and FIG. 3B is a longitudinal section of the socket 10 shown in FIG. FIG. The socket 10 has a cylindrical base 12 with a bottom.
Is entirely covered and protected by the insulating member 11. A lead wire 14 for connecting to an external power supply is connected to the bottom surface of the socket 10.

The material of the metal base 12 is not particularly limited, and examples thereof include metals such as nickel, tungsten, and molybdenum. Also, its size is not particularly limited because there is a balance with an external terminal to be used.
For example, the height l is 3 to 30 mm, and the outer diameter R is 1 to 15 m
m, the inner diameter r is preferably 0.5 to 10 mm,
When attached to the external terminal 23, it is desirable that the size be such that it can be firmly fixed so that it does not easily fall off. Also, external terminals 23 are provided inside the socket 10.
A spring material, such as a spring plate, for firmly supporting and fixing the spring may be provided.

The socket may be formed with a through hole for inserting the external terminal 23, and the lead wire may be fixed inside the through hole. In addition, the base 12
Is desirably covered with an insulating member 11, as shown in FIG.

Although the insulating member 11 is not particularly limited, for example, alumina, zirconia, cordierite,
Ceramics such as mullite and the like can be mentioned. This is because it is excellent in heat resistance and heat insulation. Other materials include, for example, inorganic fibers such as glass wool, rock wool, and silica wool. Among these inorganic fibers, glass wool is preferred.

It is desirable that the layer of the insulating member 11 be formed in such a thickness that the temperature of the socket 10 does not increase so much even during heating. By providing the layer of the insulating member 11 in this manner, the socket can be easily removed, and a short circuit can be prevented.
The heat radiation from the socket 10 is prevented and the ceramic substrate 2
This is because the cooling spot does not occur in No. 1.

In the socket 10 shown in FIG. 3, the lead wires 14 are connected and fixed to the socket 10, but are connected in such a manner that they can be attached to and detached from the socket 10. You may.

In the ceramic heater shown in FIG. 1, the ceramic substrate is fitted into the supporting container via a heat insulating ring, but the ceramic substrate is placed on the supporting container and a connecting member such as a bolt is used. Alternatively, the ceramic heater may be configured by fixing the ceramic heater to the upper surface of the support container via a heat insulating member or the like.

FIG. 4 is a partially enlarged sectional view schematically showing the vicinity of a resistance heating element of a ceramic heater according to another embodiment of the present invention in which a resistance heating element is disposed inside a ceramic substrate. .

Although not shown, the ceramic substrate 31
Are formed in a disk shape, and the resistance heating elements 22 are formed in a concentric pattern inside the ceramic substrate 31. Further, as shown in FIG. 1, for example, these resistance heating elements 22 are connected such that double concentric circles close to each other form a single line as a set of circuits, and are directly below both ends of the circuit. A through hole 38 is formed in the through hole 38, and the blind hole 3 is formed between the through hole 38 and the ceramic substrate bottom 31b.
7 are formed.

The blind hole 37 is provided with an external terminal 33.
Are inserted and connected, and the socket 10 is attached to the external terminal 33. Also, this socket 10 is shown in FIG.
And the outer periphery thereof is entirely covered with an insulating member 11. Therefore, in the semiconductor manufacturing / inspection apparatus shown in FIG. 4 as well, by attaching and detaching the socket 10 attached to the external terminal 33,
The ceramic substrate 31 can be easily replaced.

The through hole 38 is made of a metal such as tungsten or molybdenum, or a carbide thereof.
The diameter is desirably 0.1 to 10 mm. This is because cracks and distortion can be prevented while preventing disconnection.

The size of the blind hole 37 is not particularly limited, and may be any size as long as the head of the external terminal 33 can be inserted. The external terminal 33 is inserted and connected to the blind hole 37, and the connection is made with the solder and brazing material used when connecting the resistance heating element 22 and the external terminal 23 described above. Similar ones can be used.

In the present invention, the resistance heating element is made of a metal such as a noble metal (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel, or tungsten.
It is desirable to use a conductive ceramic such as a molybdenum carbide. This is because the resistance value can be increased, the thickness itself can be increased for the purpose of preventing disconnection, and the like, and it is hard to be oxidized and the thermal conductivity does not easily decrease. These may be used alone or in combination of two or more.

Since the resistance heating element needs to make the temperature of the entire ceramic substrate uniform, a concentric pattern as shown in FIG. 1 or a combination of a concentric pattern and a bent line pattern is used. Are preferred.
Further, the thickness of the resistance heating element is preferably 1 to 50 μm,
The width is desirably 5 to 20 mm.

The resistance value can be changed by changing the thickness and width of the resistance heating element, but this range is most practical. The resistance value of the resistance heating element is
The thinner and thinner, the larger.

When the resistance heating element is provided inside, the distance between the heating surface 21a and the resistance heating element 22 becomes short, and the uniformity of the surface temperature is reduced. Therefore, it is necessary to increase the width of the resistance heating element 22 itself. There is. In addition, since the resistance heating element 22 is provided inside the ceramic substrate, there is no need to consider adhesion to nitride ceramics or the like.

The resistance heating element may have any of a rectangular, elliptical, spindle-shaped, or semi-cylindrical cross section, but is preferably flat. This is because the flat surface is more likely to radiate heat toward the heating surface, so that the amount of heat propagation to the heating surface can be increased, and the temperature distribution on the heating surface is less likely to occur. The resistance heating element may have a spiral shape.

In order to form a resistance heating element on the bottom or inside of the ceramic substrate, it is preferable to use a conductive paste made of metal or conductive ceramic. That is, when a resistance heating element is formed on the surface of the ceramic substrate 21 as shown in FIGS. 1 and 2, the ceramic paste is usually produced to produce the ceramic substrate 21 and then the conductor paste layer is formed on the surface. Then, by firing, a resistance heating element is produced. On the other hand, when a resistance heating element is formed inside the ceramic substrate 31 as shown in FIG. 4, the above-mentioned conductor paste layer is formed on a green sheet, and then the green sheet is laminated and fired, so that the resistance heating element is formed inside. Create a heating element.

The conductive paste is not particularly limited, but preferably contains not only metal particles or conductive ceramic particles for ensuring conductivity, but also a resin, a solvent, a thickener and the like.

Examples of the material of the metal particles and the conductive ceramic particles include those described above. The particle size of these metal particles or conductive ceramic particles is 0.1 to 10
0 μm is preferred. If it is too fine, less than 0.1 μm, it is liable to be oxidized, while if it exceeds 100 μm, sintering becomes difficult and the resistance value becomes large.

Even if the shape of the metal particles is spherical,
It may be scaly. When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes.

When the metal particles are flakes or a mixture of spheres and flakes, the metal oxide between the metal particles can be easily held, and the adhesion between the resistance heating element and the ceramic substrate can be improved. This is advantageous because it can ensure the performance and can increase the resistance value.

Examples of the resin used for the conductor paste include an epoxy resin and a phenol resin. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

When the conductor paste for the resistance heating element is formed on the surface of the ceramic substrate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable that they are tied. As described above, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be more closely adhered.

It is not clear why mixing the above metal oxide improves the adhesion to the ceramic substrate, but the surface of the metal substrate or the surface of the ceramic substrate made of non-oxide has a slight surface. It is considered that the oxide film is oxidized to form an oxide film, and the oxide films are sintered and integrated via the metal oxide, so that the metal particles and the ceramic adhere to each other. Further, when the ceramic constituting the ceramic substrate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

As the metal oxide, for example, oxidized
Lead, zinc oxide, silica, boron oxide (B _Two O_Three ), Al
Selected from the group consisting of Mina, Yttria and Titania
At least one is preferred. These oxides have resistance
Metal particles and ceramics can be used without increasing the resistance of the heating element.
This is because the adhesion to the substrate can be improved.
You.

The ratio of the above-mentioned lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is as follows: 1-10, silica 1-30, boron oxide 5-50, zinc oxide 20-70, alumina 1
-10, yttria 1-50, titania 1-50, and the total is preferably adjusted so as not to exceed 100 parts by weight. By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic substrate can be particularly improved.

The amount of the metal oxide added to the metal particles is preferably 0.1% by weight or more and less than 10% by weight. The area resistivity when the resistance heating element is formed using the conductor paste having such a configuration is preferably 1 to 45 mΩ / □.

If the area resistivity exceeds 45 mΩ / □, the amount of heat generated becomes too large with respect to the applied voltage, and it is difficult to control the amount of heat generated in a ceramic substrate provided with a resistance heating element on the surface. . The amount of metal oxide added is 1
If the content is 0% by weight or more, the sheet resistivity exceeds 50 mΩ / □, the amount of generated heat becomes too large, temperature control becomes difficult, and the uniformity of the temperature distribution decreases.

When the resistance heating element is formed on the surface of the ceramic substrate, it is preferable that a metal coating layer is formed on the surface of the resistance heating element. This is to prevent the internal metal sintered body from being oxidized to change the resistance value.
The thickness of the metal coating layer to be formed is preferably 0.1 to 10 μm.

The metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal.
Specifically, for example, gold, silver, palladium, platinum, nickel and the like can be mentioned. These may be used alone,
Two or more kinds may be used in combination. Of these, nickel is preferred. When the resistance heating element is formed inside the ceramic substrate, no coating is required because the surface of the resistance heating element is not oxidized.

When the resistance heating element is provided on the ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the present invention as described above, it has a function as a heater. Can be heated. The material of the ceramic substrates 21 and 31 constituting the semiconductor manufacturing / inspection apparatus of the present invention is not particularly limited, and examples thereof include a nitride ceramic, a carbide ceramic, and an oxide ceramic.

Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride and the like. Further, as the carbide ceramic, metal carbide ceramic,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples include tantalum carbide and tungsten carbide.

Examples of the oxide ceramic include metal oxide ceramics such as alumina, zirconia, cordierite, and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Also, among nitride ceramics, aluminum nitride is most preferred. This is because the thermal conductivity is the highest at 180 W / m · K.

Further, the ceramic material may contain a sintering aid. As the sintering aid, for example,
Examples thereof include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering aids,
_{CaO, Y 2 O 3, Na} 2 O, Li 2 O, Rb 2 O are preferred. Their content is 0.1 to 10% by weight.
Is preferred. Further, it may contain alumina.

It is desirable that the brightness of the ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the present invention be N4 or less as a value based on the provisions of JIS Z8721. This is because a material having such brightness is excellent in radiant heat and concealing property. Further, such a ceramic substrate can accurately measure the surface temperature by using a thermoviewer.

Here, the lightness N is set to 0 for an ideal black lightness, 10 for an ideal white lightness, and a brightness of the color between these black lightness and white lightness. Each color is divided into ten so that the perception of the color is equal, and displayed by symbols N0 to N10. And the actual measurement is N0-N
The comparison is made with the color chart corresponding to No. 10. In this case, the first decimal place is 0 or 5.

The ceramic substrate having such characteristics has a carbon content of 100 to 5000 p in the ceramic substrate.
pm. There are two types of carbon, amorphous and crystalline.Amorphous carbon can suppress a decrease in volume resistivity of a ceramic substrate at a high temperature. Since the decrease in thermal conductivity at high temperatures can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

As the amorphous carbon, for example, C,
Hydrocarbons consisting solely of H and O, preferably saccharides, can be obtained by baking in air, and graphite powder or the like can be used as crystalline carbon. In addition, carbon can be obtained by thermally decomposing the acrylic resin in an inert atmosphere (nitriding gas, argon gas) and then heating and pressurizing. By changing the acid value of the acrylic resin, The degree of crystallinity (amorphity) can be adjusted.

The ceramic substrate has a disk shape,
A diameter of 200 mm or more is desirable, and a diameter of 250 mm or more is optimal. The disc-shaped ceramic substrate used for the semiconductor device is required to have uniform temperature, but the larger the diameter of the substrate, the more likely the temperature becomes non-uniform.

The thickness of the ceramic substrate is preferably 50 mm or less, more preferably 20 mm or less. Also, 1
５5 mm is optimal. If the thickness is too small, warpage at a high temperature is apt to occur, and if the thickness is too large, the heat capacity becomes too large and the temperature rise and fall characteristics deteriorate. The porosity of the ceramic substrate is desirably 0 or 5% or less.
This is because a decrease in thermal conductivity at a high temperature and the occurrence of warpage can be suppressed. The ceramic substrate used in the semiconductor manufacturing / inspection apparatus of the present invention can be used at 150 ° C. or higher,
It is desirable to use it at 200 ° C. or higher.

In the present invention, a thermocouple can be embedded in a ceramic substrate as needed. The temperature of the resistance heating element is measured with a thermocouple, and the voltage and
This is because the temperature can be controlled by changing the amount of current.

The size of the junction of the metal wires of the thermocouple is preferably equal to or larger than the diameter of each metal wire and 0.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. For this reason, the temperature controllability is improved and the temperature distribution on the heated surface of the wafer is reduced. Examples of the thermocouple include J
As listed in IS-C-1602 (1980),
K-type, R-type, B-type, E-type, J-type, and T-type thermocouples are exemplified.

Specific examples of the semiconductor manufacturing / inspection apparatus of the present invention include, for example, an electrostatic chuck, a wafer prober, a hot plate, and a susceptor.

The above ceramic heater (hot plate)
Is an apparatus in which only a resistance heating element is provided on the surface or inside of a ceramic substrate, whereby an object to be heated such as a silicon wafer can be heated to a predetermined temperature.

When an electrostatic electrode is provided inside a ceramic substrate constituting a semiconductor manufacturing / inspection apparatus of the present invention, it functions as an electrostatic chuck.

The above-mentioned electrostatic electrode is made of, for example, a noble metal (gold,
Metals such as silver, platinum, and palladium), lead, tungsten, molybdenum, and nickel, and conductive ceramics such as tungsten and molybdenum carbide can be used. These may be used alone or in combination of two or more.

FIG. 5A is a longitudinal sectional view schematically showing a ceramic substrate constituting an electrostatic chuck, and FIG.
FIG. 3 is a cross-sectional view of the ceramic substrate shown in FIG. In the electrostatic chuck 60, the ceramic substrate 61
The chuck positive and negative electrode layers 62 and 63 are buried inside, and are connected to the through holes 680, respectively, and the ceramic dielectric film 64 is formed on the electrodes.

A resistance heating element 66 and a through hole 68 are provided inside the ceramic substrate 61 so that the silicon wafer 29 can be heated. The ceramic substrate 61 may have an R
The F electrode may be embedded.

Further, although not shown, a blind hole for exposing the through hole 68 is provided below the through hole 68, and an external terminal (not shown) is inserted and connected to the blind hole. A socket having the same configuration as that used for the above-described ceramic heater is attached to the terminal, and connection with an external power supply is achieved.

As shown in (b), the electrostatic chuck 60 is usually formed in a circular shape in plan view, and a semicircular portion 62 shown in (b) is provided inside the ceramic substrate 61.
a positive electrode electrostatic layer 62 composed of a and a comb tooth portion 62b
And the chuck negative electrode electrostatic layer 63, which is also composed of a semicircular portion 63 a and a comb tooth 63 b,
3b so as to cross each other.

When this electrostatic chuck is used, the positive and negative sides of the DC power supply are connected to the chuck positive electrode electrostatic layer 62 and the chuck negative electrode electrostatic layer 63, respectively, and a DC voltage is applied. As a result, the silicon wafer placed on the electrostatic chuck is electrostatically attracted.

FIGS. 6 and 7 are horizontal sectional views schematically showing electrostatic electrodes in another electrostatic chuck.
In the electrostatic chuck 70 shown in FIG. 7, a semicircular chuck positive electrode electrostatic layer 72 and a chuck negative electrode electrostatic layer 73 are formed inside a ceramic substrate 71. In the electrostatic chuck 80 shown in FIG. Are formed with chuck positive electrode electrostatic layers 82a and 82b and chuck negative electrode electrostatic layers 83a and 83b each having a shape obtained by dividing a circle into four parts. Further, the two positive electrode electrostatic layers 82a and 82b and the two chuck negative electrode electrostatic layers 83a and 83b are formed to cross each other. In the case of forming an electrode in which a circular electrode or the like is divided, the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector.

A chuck top conductor layer is provided on a surface of a ceramic substrate constituting a semiconductor manufacturing / inspection apparatus of the present invention,
When a guard electrode or a ground electrode is provided inside, it functions as a wafer prober.

FIG. 8 is a cross-sectional view schematically showing one embodiment of the ceramic substrate constituting the wafer prober, FIG. 9 is a plan view thereof, and FIG. 10 is a plan view of the ceramic substrate shown in FIG. FIG. 3 is a cross-sectional view taken along line AA of the substrate.

In this wafer prober, concentric grooves 8 are formed on the surface of the ceramic substrate 3 having a circular shape in plan view, and a plurality of suction holes 9 for sucking a silicon wafer are provided in a part of the grooves 8. The chuck top conductor layer 2 for connecting to an electrode of a silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 8.

On the other hand, on the bottom surface of the ceramic substrate 3, a resistance heating element 51 having a concentric circular shape in plan view as shown in FIG. 1 is provided to control the temperature of the silicon wafer. Although not shown, external terminals are connected and fixed to both ends of the resistance heating element 51. Sockets similar to those used for the ceramic heater described above are fitted into the external terminals, and connection to a power source is performed. Is planned.

Further, a guard electrode 6 and a ground electrode 7 (not shown) having a lattice shape as shown in FIG. 10 are provided inside the ceramic substrate 3 for removing stray capacitors and noise. . Reference numeral 52 indicates an electrode non-forming portion. The reason why such a rectangular electrode non-forming portion 52 is formed inside the guard electrode 6 is to firmly bond the upper and lower ceramic substrates 3 sandwiching the guard electrode 6 therebetween.

In the wafer prober having such a configuration, a silicon wafer having an integrated circuit formed thereon is placed on a ceramic substrate housed in a supporting container, and a probe card having tester pins is pressed against the silicon wafer, and heating and heating are performed.
A continuity test can be performed by applying a voltage while cooling.

Next, a method of manufacturing a ceramic heater will be described as an example of a method of manufacturing a semiconductor manufacturing / inspection apparatus of the present invention. FIGS. 11A to 11D are cross-sectional views schematically showing a method of manufacturing a ceramic heater having a resistance heating element on the bottom surface of a ceramic substrate.

(1) Manufacturing Process of Ceramic Substrate A slurry is prepared by mixing a sintering aid such as yttria, a binder and the like as necessary with the above-mentioned ceramic powder such as aluminum nitride, and then this slurry is spray-dried. The granules are put into a mold or the like and pressed into a plate to form a green body. At the time of preparing the slurry, amorphous or crystalline carbon may be added.

Next, the formed body is heated, fired and sintered to produce a ceramic plate. Thereafter, the ceramic substrate 21 is manufactured by processing into a predetermined shape, but may be a shape that can be used as it is after firing (FIG. 11A). By performing heating and firing while applying pressure, it is possible to manufacture a ceramic substrate 21 having no pores. Heating and firing may be performed at a sintering temperature or higher.
2500 ° C.

Next, if necessary, a ceramic substrate is
Although not shown, a portion serving as a through hole for inserting a support pin for supporting a silicon wafer, a portion serving as a through hole for inserting a lifter pin for carrying a silicon wafer, and a temperature measuring element such as a thermocouple are provided. A portion having a bottomed hole for embedding is formed.

(2) Step of Printing Conductor Paste on Ceramic Substrate The conductor paste is generally a high-viscosity fluid composed of metal particles, resin and solvent. The conductor paste is printed on a portion where the resistance heating element is to be provided by screen printing or the like to form a conductor paste layer.
In addition, since the resistance heating element needs to have a uniform temperature over the entire ceramic substrate, it is preferable to print, for example, a concentric shape or a pattern combining a concentric shape and a bent line shape. . The conductor paste layer
It is preferable that the cross section of the resistance heating element 22 after firing is formed in a square and flat shape.

(3) Firing the Conductive Paste The conductive paste layer printed on the bottom surface of the ceramic substrate 21 is heated and fired to remove the resin and the solvent, sinter the metal particles, and baked on the bottom surface of the ceramic substrate 21.
The resistance heating element 22 is formed (FIG. 11B). The temperature of the heating and firing is preferably from 500 to 1000C.

When the above-mentioned metal oxide is added to the conductor paste, the metal particles, the ceramic substrate and the metal oxide are sintered and integrated, so that the adhesion between the resistance heating element and the ceramic substrate is improved. I do.

(4) Formation of Metal Coating Layer It is desirable to provide a metal coating layer (not shown) on the surface of the resistance heating element 22. The metal coating layer is formed by electrolytic plating,
Although it can be formed by electroless plating, sputtering, or the like, in consideration of mass productivity, electroless plating is optimal.

(5) Attachment of Terminals and the Like An external terminal 23 for connection to a power supply is attached to an end of the circuit of the resistance heating element 22 by soldering or the like (FIG. 11C).
The socket 10 whose outer peripheral portion is covered with an insulating member is attached to the external terminal 23 (FIG. 11D). In addition, a thermocouple is inserted into the bottomed hole and sealed with a heat-resistant resin such as polyimide or ceramic. (6) Thereafter, the ceramic substrate having such a resistance heating element 22 is attached to the supporting container 92 shown in FIGS. 1 and 2 via the heat insulating ring 91, and the lead wire 14 extending from the socket 10 is attached to the bottom plate 94. By performing a process such as drawing out from the through hole 94a to the outside, the manufacture of the ceramic heater is completed.

When manufacturing the above ceramic heater, an electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate, and a chuck top conductor layer is provided on the heating surface to form the inside of the ceramic substrate. A wafer prober can be manufactured by providing a guard electrode and a ground electrode on the substrate.

In the case where electrodes are provided inside the ceramic substrate, a metal foil or the like may be embedded inside the ceramic substrate. When a conductor layer is formed on the surface of the ceramic substrate, a sputtering method or a plating method can be used, and these may be used in combination.

Next, as another example of the method of manufacturing the semiconductor manufacturing / inspection apparatus of the present invention, a method of manufacturing a ceramic heater having a different configuration from the above heater will be described. FIG.
(A)-(d) is sectional drawing which showed typically the manufacturing method of the ceramic heater which has a resistance heating element inside a ceramic substrate.

(1) Green Sheet Preparation Step First, a paste is prepared by mixing nitride ceramic powder with a binder, a solvent, and the like, and a green sheet is prepared using the paste. Aluminum nitride or the like can be used as the above-mentioned ceramic powder, and a sintering aid such as yttria may be added as necessary. Further, when producing a green sheet, crystalline or amorphous carbon may be added.

The binder is preferably at least one selected from an acrylic binder, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, as the solvent, at least one selected from α-terpineol and glycol is desirable.

The paste obtained by mixing them is formed into a sheet by a doctor blade method to form a green sheet 5.
0 is produced. The thickness of the green sheet 50 is 0.1 to
5 mm is preferred. Next, on the obtained green sheet,
If necessary, a part to be a through hole to insert a support pin for supporting the silicon wafer, a part to be a through hole to insert a lifter pin to transport the silicon wafer, etc., a thermocouple such as a thermocouple A portion serving as a bottomed hole for embedding, a portion 380 serving as a through hole for connecting a resistance heating element to an external terminal, and the like are formed. The above processing may be performed after forming a green sheet laminate described later.

(2) Step of Printing Conductive Paste on Green Sheet A conductive paste containing a metal paste or a conductive ceramic is printed on the green sheet 50 to form a conductive paste layer 220. These conductive pastes contain metal particles or conductive ceramic particles. The average particle diameter of the metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. If the average particle size is less than 0.1 μm or more than 5 μm, it is difficult to print the conductive paste.

As such a conductive paste, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one kind of binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol And a composition (paste) obtained by mixing 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol.

(3) Green Sheet Laminating Step The green sheet 50 on which the conductive paste prepared in the above step (1) is not printed is replaced with the green sheet on which the conductive paste layer 220 prepared in the above step (2) is printed. 50
(FIG. 12A). At this time, the number of green sheets 50 stacked on the upper side is made larger than the number of green sheets 50 stacked on the lower side, and the formation position of the resistance heating element 22 is decentered toward the bottom. Specifically, the number of stacked green sheets 50 on the upper side is preferably 20 to 50, and the number of stacked green sheets 50 on the lower side is preferably 5 to 20.

(4) Green Sheet Laminate Firing Step The green sheet laminate is heated and pressurized to sinter the green sheet 50 and the internal conductor paste to produce the ceramic substrate 31 (FIG. 12B). ). The heating temperature is preferably from 1000 to 2000 ° C.,
10-20 MPa is preferable. Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon,
Nitrogen or the like can be used.

The obtained ceramic substrate 31 is provided with a bottomed hole (not shown) for inserting a temperature measuring element, a blind hole 37 for inserting an external terminal, and the like (FIG. 12C). The bottomed hole and the blind hole 37 can be formed by performing blasting such as drilling or sand blasting after surface polishing.

Next, the external terminal 33 is connected to the through hole 38 exposed from the blind hole 37 using a gold solder or the like, and the socket 10 having the insulating member 11 is attached to the external terminal 33 (FIG. 12 ( d)). The heating temperature is preferably 90 to 450 ° C. in the case of soldering,
In the case of processing with a brazing material, 900 to 1100 ° C. is suitable. Further, a thermocouple or the like as a temperature measuring element is sealed with a heat-resistant resin to form a ceramic heater. (5) Thereafter, the ceramic substrate 31 having the resistance heating element 22 inside is mounted on the support container 92 shown in FIGS.
The lead wire 14 extending from the bottom plate 94 is drawn out through the through hole 94a of the bottom plate 94, and the manufacturing of the ceramic heater is completed.

In the above-described ceramic heater, various operations are performed while a silicon wafer or the like is placed thereon, or the silicon wafer or the like is held by support pins, and then the silicon wafer or the like is heated or cooled. be able to.

When manufacturing the above ceramic heater, an electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate. Also, a chuck top conductor layer is provided on the heating surface and the inside of the ceramic substrate can be manufactured. A wafer prober can be manufactured by providing a guard electrode and a ground electrode on the substrate.

When electrodes are provided inside the ceramic substrate, a conductive paste layer may be formed on the surface of the green sheet as in the case of forming the resistance heating element. When a conductor layer is formed on the surface of the ceramic substrate, a sputtering method or a plating method can be used, and these may be used in combination.

[0106]

The present invention will be described in more detail below. (Example 1) Production of ceramic heater (see FIG. 11) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O)
₃ : Yttria, average particle size: 0.4 μm) 4 parts by weight, a composition comprising 0.09 parts by weight of amorphous carbon obtained by thermally decomposing sucrose in air and alcohol are spray-dried. , To produce a granular powder.

(2) Next, the granulated powder was put in a mold and molded into a flat plate to obtain a formed product (green). (3) Temperature of the formed body after processing is 1800
℃, pressure: hot press at 20MPa, thickness 3mm
Was obtained. Next, a disk having a diameter of 210 mm was cut out from the sintered body to form a ceramic plate (ceramic substrate 21) (FIG. 11).
(A)).

Next, a drilling is performed on this plate-like body, and a portion serving as a through hole for inserting a lifter pin of a silicon wafer and a portion serving as a bottomed hole for embedding a thermocouple (diameter:
1.1 mm, depth: 2 mm).

(4) On the bottom surface of the sintered body obtained in the above (3),
The conductor paste was printed by screen printing. The printing pattern was concentric as shown in FIG. As a conductive paste, Solvest PS603 manufactured by Tokurika Kagaku Kenkyusho used for forming through holes in printed wiring boards is used.
D was used. This conductor paste is a silver-lead paste, and lead oxide (5% by weight),
It contained 7.5 parts by weight of a metal oxide consisting of zinc oxide (55% by weight), silica (10% by weight), boron oxide (25% by weight) and alumina (5% by weight). The silver particles had a mean particle size of 4.5 μm and were scaly.

(5) Next, the sintered body on which the conductor paste was printed was heated and fired at 780 ° C. to obtain silver in the conductor paste,
The lead was sintered and baked on the sintered body to form the resistance heating element 22 (FIG. 11B). The silver-lead resistance heating element 22 had a thickness of 5 μm, a width of 2.4 mm, and an area resistivity of 7.7 mΩ / □.

(6) Nickel sulfate 80 g / l, sodium hypophosphite 24 g / l, sodium acetate 12 g / l,
The sintered body prepared in the above (5) was immersed in an electroless nickel plating bath consisting of an aqueous solution having a concentration of boric acid of 8 g / l and ammonium chloride of 6 g / l, and a thickness of 1 μm was formed on the surface of the silver-lead resistance heating element 22. Metal coating layer (nickel layer) (not shown)
Was precipitated.

(7) Screen printing is performed on the portion to which the external terminal 23 for securing the connection with the power
A silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed to form a solder paste layer. Next, an external terminal 23 made of Kovar was placed on the solder paste layer, and heated and reflowed at 420 ° C., and one end of the external terminal 23 was attached to the surface of the resistance heating element 22 (FIG. 11C). .

(8) The socket 10 in which the outer periphery of the metal base 12 made of tungsten was covered with glass wool was attached to the external terminal 23 (FIG. 11D). The thickness of the glass wool was 1 mm.

(9) A thermocouple for temperature control was inserted into the bottomed hole, filled with a polyimide resin, and cured at 190 ° C. for 2 hours. (10) Thereafter, the ceramic substrate 21 subjected to the above processing
Was attached to the support container 92 via the heat insulating ring 91, and the lead wire 14 and other wiring of the socket 10 were pulled out from the through hole 94a of the bottom plate 94, thereby completing the manufacture of the ceramic heater. In this ceramic heater, only the ceramic substrate 21 could be easily replaced by attaching and detaching the socket 10.

Example 2 Ceramic Heater (See FIG. 12) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttrium oxide (Y
₂ O ₃ : yttria, average particle diameter: 0.4 μm) 4 parts by weight, 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and a paste obtained by mixing 53 parts by weight of alcohol composed of 1-butanol and ethanol Was molded by a doctor blade method to produce a green sheet 50 having a thickness of 0.47 mm.

(2) Next, this green sheet 50
After drying at 0 ° C for 5 hours, the part 3 that becomes a through hole
80 and the like were formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, acrylic binder 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A.

Tungsten particles 10 having an average particle diameter of 3 μm
A conductive paste B was prepared by mixing 0 parts by weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant. This conductor paste A was printed on the green sheet by screen printing, and a conductor paste layer 220 for the resistance heating element 22 was formed. The printing pattern was a concentric pattern as shown in FIG. 1, the width of the conductive paste layer was 10 mm, and the thickness was 12 μm.
m. In addition, the conductive paste B was filled in a portion 380 to be a through hole.

On the green sheet after the above treatment, 37 green sheets on which the tungsten paste is not printed are printed on the upper side (heating surface), 13 sheets on the lower side, 130 ° C., 8MPa.
The layers were laminated at a pressure a (FIG. 12A).

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and at 1890 ° C. under a pressure of 15 M
Hot pressing was performed at Pa for 10 hours to obtain a 3 mm-thick aluminum nitride sintered body. This was cut out into a 230 mm disc shape, and a 6 μm thick, 10 mm wide (aspect ratio: 1666) resistance heating element 22 and a through hole 3 were cut inside.
12 (FIG. 12).
(B)).

(5) Next, the plate obtained in (4) is
After polishing with a diamond grindstone, a mask was placed, and a bottomed hole for a thermocouple and a through hole for inserting a lifter pin for transporting a silicon wafer or the like were provided on the surface by blasting with glass beads.

(6) Further, a portion immediately below the through hole 38 is cut out with a drill to have a diameter of 1.5 mm and a depth of 0.5 mm.
A hole 37 mm was formed to expose the through hole 38 (FIG. 12C). An external terminal 33 made of Kovar is inserted into the blind hole 37, and a Ni-Au alloy (Au: 81.5% by weight, Ni: 18.4% by weight, impurity: 0.1% by weight) is used.
One end of the external terminal 33 was connected to the through hole 38 by heating and reflowing at 970 ° C.
Further, a socket 10 having an outer peripheral portion of a base metal portion made of tungsten covered with porous alumina was attached to the external terminal 33 (FIG. 12D). The thickness of the alumina is 2
mm.

(7) A plurality of thermocouples for temperature control were embedded in the bottomed holes, filled with a polyimide resin, and cured at 190 ° C. for 2 hours. (8) Thereafter, the ceramic substrate 31 subjected to the above processing is attached to the supporting container 92 via the heat insulating ring 91, and the lead wire 14 and other wires of the socket 10 are drawn out from the through hole 94a of the bottom plate 94, and the ceramic heater 31 Production ended. In this ceramic heater, only the ceramic substrate 31 could be easily replaced by attaching and detaching the socket 10.

(Comparative Example 1) Except that the lead wire 14 was directly connected to the through hole 38 without using the external terminal 33 and the socket 10, and the through hole 38 and the lead wire 14 were brazed using the above-described gold brazing. Manufactured a ceramic substrate having a resistance heating element in the same manner as in Example 2.

Thereafter, the ceramic substrate subjected to the above processing is attached to the supporting container 92 via the heat insulating ring 91, and the lead wires 14 and other wires are pulled out from the through holes 94a of the bottom plate 94, thereby completing the manufacture of the ceramic heater. . In the ceramic heater having such a configuration, when the ceramic substrate is replaced, the lead wires 14 also need to be replaced at the same time.

Further, a heat cycle test in which the temperature was raised to 400 ° C., left for 2 hours, and the temperature was lowered to room temperature 1000 times was repeated. At this time, Examples 1 to
In No. 2, the lead wire did not fall off, but in Comparative Example 1, the lead wire fell off.

[0127]

As described above, according to the semiconductor manufacturing / inspection apparatus of the present invention, the external terminals of the ceramic substrate and the lead wires are connected via the socket. In addition, only the ceramic substrate can be freely replaced.

[Brief description of the drawings]

FIG. 1 is a plan view schematically showing a ceramic heater as an example of a semiconductor manufacturing / inspection apparatus of the present invention.

FIG. 2 is a longitudinal sectional view of the ceramic heater shown in FIG.

FIG. 3A is a perspective view schematically showing a socket used for a semiconductor manufacturing / inspection apparatus of the present invention, and FIG.
FIG.

FIG. 4 is a partially enlarged sectional view of a ceramic heater according to another embodiment of the semiconductor manufacturing / inspection apparatus of the present invention.

5A is a longitudinal sectional view schematically showing an electrostatic chuck according to the present invention, and FIG. 5B is a sectional view taken along line AA of the electrostatic chuck shown in FIG. .

FIG. 6 is a horizontal sectional view schematically showing an example of an electrostatic electrode embedded in the electrostatic chuck according to the present invention.

FIG. 7 is a horizontal sectional view schematically showing still another example of the electrostatic electrode embedded in the electrostatic chuck.

FIG. 8 is a cross-sectional view schematically showing a wafer prober which is an example of the semiconductor manufacturing / inspection apparatus of the present invention.

FIG. 9 is a plan view schematically showing the wafer prober shown in FIG.

FIG. 10 is a sectional view taken along line AA of the wafer prober shown in FIG. 8;

FIGS. 11A to 11D are cross-sectional views schematically showing a method of manufacturing a ceramic heater as an example of the semiconductor manufacturing / inspection apparatus of the present invention.

FIGS. 12A to 12D are cross-sectional views schematically showing a method for manufacturing a ceramic heater as another example of the semiconductor manufacturing / inspection apparatus of the present invention.

DESCRIPTION OF SYMBOLS 10 Socket 11 Insulating member 12 Metal base 14 Lead wire 20 Ceramic heater 21, 31, 61 Ceramic substrate 21a Heating surface 21b, 31b Bottom surface 22 Resistance heating element 23, 33 External terminal 24 Bottom hole 25 Penetration Hole 27 Wiring 28 Temperature measuring element 29 Silicon wafer 35 Metal layer 37 Bag hole 38 Through hole 91 Insulation ring 92 Support container 94 Bottom plate 94a Through hole 99 Guide tube

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 3/20 328 H05B 3/20 328 F Term (Reference) 3K034 AA02 AA04 AA06 AA10 AA16 AA34 BA06 BA14 BB06 BB14 BC12 BC16 BC17 DA04 HA01 HA04 JA02 3K092 PP20 QA05 QB18 QB61 RF03 RF11 RF17 RF22 RF26 RF27 TT30 UA05 VV03 4M106 AA01 BA01 BA14 CA15 CA31 DD30 DJ02

Claims (1)

[Claims] 1. A semiconductor manufacturing / manufacturing method wherein a ceramic substrate having a conductor layer disposed on the surface or inside thereof is disposed in a support container.
An inspection apparatus, wherein an external terminal is connected to the conductor layer, and a socket having a lead wire is attached to the external terminal.