JP2001342079A - Ceramic junction body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic junction body which is large in junction strength, and excellent in temperature uniformity on a heating surface. SOLUTION: This ceramic junction body is characterized in that a tabular ceramic body and a tubular ceramic body are integrated via a metallic layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic joined body used for a hot plate (ceramic heater), an electrostatic chuck, a susceptor, etc., comprising a plate-shaped ceramic body (ceramic substrate) having a conductor layer provided therein. About.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing / inspection apparatus including an etching apparatus and a chemical vapor deposition apparatus, a heater or an electrostatic chuck using a metal base material such as stainless steel or an aluminum alloy is conventionally used. Has been used.

[0003] However, such a metal heater has the following problems.
There were the following problems. First, because it is made of metal,
The thickness of the heater plate must be as thick as about 15 mm. This is because, in a thin metal plate, warpage, distortion, and the like are generated due to thermal expansion caused by heating, and the silicon wafer placed on the metal plate is damaged or tilted. However, when the thickness of the heater plate is increased, there is a problem that the weight of the heater increases and the heater becomes bulky.

In addition, by changing the voltage or the amount of current applied to the resistance heating element, the temperature of a surface to be heated (hereinafter, referred to as a heating surface) such as a silicon wafer is controlled. Because of the thickness, the temperature of the heater plate does not quickly follow changes in the voltage or the amount of current, and there is a problem that it is difficult to control the temperature.

In Japanese Patent Application Laid-Open No. Hei 4-324276, aluminum nitride, which is a non-oxide ceramic having high thermal conductivity and high strength, is used as a substrate. A hot plate has been proposed in which through holes are formed and dichrome wires are brazed as external terminals to these through holes.

In such a hot plate, a ceramic substrate having a high mechanical strength even at a high temperature is used. Therefore, the thickness of the ceramic substrate can be reduced so that the heat capacity can be reduced. The temperature of the ceramic substrate can quickly follow the change in the amount.

Further, such a hot plate is disclosed in Japanese Patent Application Laid-Open No. 2000-114355 and Japanese Patent No. 27839.
As described in Japanese Patent Publication No. 80, a cylindrical ceramic and a disc-shaped ceramic are joined via a ceramic joining layer,
Means have been taken to protect the wiring such as the external terminals 97 from the reactive gas, halogen gas and the like used in the semiconductor manufacturing process.

[0008]

However, since such bonding is performed through a ceramic bonding layer,
After manufacturing the ceramic sintered body, it was necessary to perform firing again at the time of joining. For this reason, there arises a problem that the surface roughness of the plate-shaped ceramic body changes, and that the electrodes deteriorate during firing.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and can perform joining of a plate-shaped ceramic body and a cylindrical ceramic body at a relatively low temperature and have excellent bonding strength. It is an object of the present invention to realize a ceramic joined body which is excellent in temperature uniformity of a heating surface without deterioration of a ceramic body or an electrode.

[0010]

SUMMARY OF THE INVENTION The present invention relates to a method for manufacturing semiconductors.
A ceramic joined body used for an inspection device, wherein a plate-shaped ceramic body and a tubular ceramic body are integrated via a metal layer.

In the present invention, instead of the ceramic bonding layer,
Since the bonding is performed via the metal layer, there is no need to perform firing during the bonding. Further, the surface of the plate-shaped ceramic body does not have unevenness, the surface roughness does not change, and the electrodes do not deteriorate during firing. If unevenness occurs, a temperature difference may occur in the object to be heated due to the influence of radiant heat, and when the roughness changes, the chucking force of the electrostatic chuck or the air between the plate-shaped ceramic body and the object to be heated. Flow is obstructed, and a temperature difference occurs in the object to be heated.

In the present invention, it is desirable that the metal layer comprises a vapor deposition layer and a brazing material layer. Since the brazing material does not easily adhere directly to the ceramic substrate surface, the ceramic and the vapor-deposited film are formed by forming a physical vapor-deposited film (for example, a film formed by a sputtering method, a vacuum vapor-deposition method, etc.) on the ceramic surface. And the bonding strength between the deposited film and the brazing material can be improved. The term “evaporated film” as used in the present invention refers to a film on which atoms and ions generated by heating a target are attached, and a film deposited in vacuum is vacuum-deposited film, which is accelerated by voltage application and evaporated. The thing is called a sputtering film. The deposited film of the present invention is used as a concept including both of the above.

It is preferable that a recess is formed in the plate-shaped ceramic body, and a cylindrical ceramic body is fitted in the recess. This is because even if a force is applied to the cylindrical ceramic body, the force hardly concentrates on the metal layer portion, and the plate-shaped ceramic body and the cylindrical ceramic body are hardly broken or separated.

Further, in the present invention, the connection with the external terminal or the like is made in a state of being completely isolated from the outside of the cylindrical ceramic body. Therefore, when the ceramic joined body of the present invention is used as a semiconductor manufacturing / inspection apparatus, the wiring drawn out from under the cylindrical ceramic body is protected by a tubular member or the like, so that the ceramic joined body becomes reactive. Even in an atmosphere containing a gas, a halogen gas, or the like, the wires and the like of the external terminals do not come into direct contact with these gases, and the wires and the like of the external terminals do not corrode.

In general, it is desirable that an inert gas is slowly poured into the tubular ceramic body or the tubular member so that a reactive gas or the like does not enter the inside of the tubular ceramic body. .

The brazing material constituting the brazing material layer is desirably at least one selected from aluminum alloy brazing, gold brazing, silver brazing, phosphor copper brazing, brass brazing, nickel brazing, and palladium brazing. This is because these brazing materials are soft and ductile, so that even if stress is generated by a heat cycle or the like, the plate-shaped ceramic body and the cylindrical ceramic body are hardly broken and separated. When a plate-shaped ceramic body made of aluminum nitride is used, an aluminum brazing material is optimal. This is because it is soft and has excellent adhesion to aluminum nitride.

The metal constituting the vapor deposition layer is desirably at least one selected from aluminum, a noble metal, copper, and nickel.
It is desirable to form on both contact surfaces of the cylindrical ceramic body and the plate-like ceramic body. This is because the deposited film improves the adhesion between the ceramic and the brazing material. further,
It is desirable that the main elements of the vapor-deposited film and the brazing material (when the element is the maximum contained element and when it is an element that does not affect the characteristic of the brazing material even if it is not the maximum contained element) are the same. This is because the adhesiveness is excellent.

The thickness of the plate-like ceramic body is 25 mm
The width of the cylindrical ceramic body that comes into contact with the plate-shaped ceramic body is preferably 1 mm or more. Joined via a metal layer having good thermal conductivity, and because the thickness of the plate-shaped ceramic body is as thin as 25 mm or less, it is easily cooled by the gas inside the cylindrical ceramic body, and the temperature of the plate-shaped ceramic body is reduced. Tends to decrease. Therefore, by making the width of the cylindrical ceramic body as thick as 1 mm or more, the temperature of the gas inside is prevented from lowering, and the surface temperature of the plate-like ceramic body is prevented from lowering.

The relationship between the contact area B between the cylindrical ceramic body and the plate-shaped ceramic body and the area A surrounded by the cylindrical ceramic body is B / A = 0.1 to 0.8. desirable.

When B / A is smaller than 0.1, the temperature inside the cylindrical ceramic body tends to decrease, so that the surface temperature of the plate-like ceramic body tends to decrease. If it exceeds 8, heat is transferred to the cylindrical ceramic body, and the surface temperature of the plate-shaped ceramic body is liable to decrease.

The surface roughness of the portion of the plate-shaped ceramic body that contacts the cylindrical ceramic body and the surface roughness of the portion of the cylindrical ceramic body that contacts the plate-shaped ceramic body are as follows:
In both cases, it is desirable that Ra is 5 μm or less.

If the surface roughness of these parts exceeds 5 μm in Ra, even if they are joined via a metal layer, they are broken or separated by a heat cycle or the like. Preferably, the conductive layer is a resistance heating element, and the ceramic joined body functions as a hot plate. This is because such a joint structure is particularly desirable at a high temperature. The resistance heating element
It may be formed in a layered form or may be formed in a striatum.

Preferably, the conductor layer is an electrostatic electrode, and the ceramic joined body functions as an electrostatic chuck. This is because the electrostatic chuck is often used in a corrosive atmosphere, and such a bonding structure is optimal.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, description will be made in accordance with embodiments. Note that the present invention is not limited to this description. Also,
When the ceramic joined body of the present invention is applied to a semiconductor manufacturing / inspection apparatus, a plate-like ceramic body (hereinafter, referred to as a ceramic substrate) provided with a conductor is fixed to an upper portion of a supporting container having a bottom plate. Further, it is preferable that a concave portion is formed in the bottom of the ceramic substrate, a cylindrical ceramic body is fitted in the concave portion, and the wiring from the conductor layer is stored in the cylindrical ceramic body.

When the conductor layer formed inside the ceramic substrate constituting the ceramic joined body of the present invention is a resistance heating element and a conductor circuit, the semiconductor manufacturing / inspection apparatus of the present invention functions as a hot plate. .

FIG. 1 is a plan view schematically showing a hot plate which is an example of the ceramic joined body of the present invention.
2 is a sectional view of the same, and FIG. 3 is a partially enlarged sectional view of the vicinity of the cylindrical ceramic body shown in FIG.

In this hot plate 10, a concave portion 1 is formed on a bottom surface 11b near the center of a disk-shaped ceramic substrate 11.
6 are formed. As shown in FIG. 3, a cylindrical ceramic body 17 is fitted into the recess 16, and the cylindrical ceramic body 17 and the ceramic substrate 11 are
Are joined via a vapor deposition film 28 and a brazing material 29 formed inside. Further, since the cylindrical ceramic body 17 is formed so as to be in close contact with a bottom plate (not shown) of the support container, the inside and the outside of the cylindrical ceramic body 17 are completely isolated.

As shown in FIG. 1, inside the ceramic substrate 11, there are formed resistance heating elements 12 formed of concentric circuits, and these resistance heating elements 12 are formed by two concentric circles close to each other. The circuits are connected as a single line as a set of circuits.

A conductor circuit 18 is formed between the resistance heating element 12 and the bottom surface 11b so as to extend in the direction in which the recess 16 is formed. Are connected via via holes 130.

The conductor circuit 18 is formed to extend the end of the resistance heating element 12a to the center.
Immediately below the other end of the conductor circuit 18 extending to the vicinity of the recess 16, there is a through hole 13 ′ and this through hole 13 ′.
Is formed, and the through hole 1 is formed.
3 'is connected to a T-shaped external terminal 23 via a solder layer (not shown).

The end of the resistance heating element is a cylindrical ceramic body 17.
When there is no via hole or conductor circuit in the inside of the resistance heating element, the through hole 13
Are formed and connected to the external terminals 23 via a solder layer.

A socket 25 having a conductive wire 230 is attached to these external terminals 23. The conductive wire 230 is formed in a through hole 17 formed in a bottom plate (not shown).
0 to the outside and connected to a power supply or the like (not shown).

On the other hand, a temperature measuring element 180 such as a thermocouple having a lead wire 290 is inserted into the bottomed hole 14 formed in the bottom surface 11b of the ceramic substrate 11 and made of a heat-resistant resin, ceramic (silica gel or the like) or the like. And sealed. The lead wire 290 passes through the inside of the insulator (not shown), and is drawn out through a through hole (not shown) formed in the bottom plate of the support container. The inside of the insulator is also isolated from the outside. Have been. Further, a through hole 15 for inserting a lifter pin (not shown) is provided in a portion near the center of the ceramic substrate 11.

The lifter pins are adapted to place an object to be processed, such as a silicon wafer, on the lifter pin and to move the silicon wafer up and down. And heating the silicon wafer placed on the heating surface 11a of the ceramic substrate 11 or supporting the silicon wafer at a distance of 50 to 2000 μm from the heating surface 11a to heat the silicon wafer. I can do it.

A state in which a through-hole or a recess is provided in the ceramic substrate 11 and a pin having a spire or a hemispherical tip is inserted into the through-hole or the recess, and then the support pin is slightly projected from the ceramic substrate 11. By supporting the silicon wafer with the support pins, heating may be performed in a state where the silicon wafer is separated from the heating surface 11a by 50 to 2000 μm.

The bottom plate of the supporting vessel may be provided with a refrigerant introduction pipe or the like. In this case, the temperature, the cooling rate, and the like of the ceramic substrate 11 can be controlled by introducing the refrigerant into the refrigerant introduction pipe via the pipe.

As described above, this hot plate 10
In this case, the cylindrical ceramic body 17 is fitted into the concave portion 16 of the ceramic substrate 11 and the cylindrical ceramic body 17 is formed up to the bottom plate (container wall) of the support container (not shown). It is completely isolated from the outside.

Therefore, by protecting the conductive wire 230 drawn out from the through hole of the bottom plate with a tubular member, the surroundings of the hot plate become an atmosphere containing a reactive gas, a halogen gas or the like. Even when the cylindrical ceramic body 1 is in a state where
The wiring inside 7 does not corrode. Since the wiring 290 from the temperature measuring element 180 is also protected by the insulator or the like, it does not corrode.

Further, by flowing an inert gas or the like slowly into the cylindrical ceramic body 17 to prevent a reactive gas, a halogen gas, or the like from flowing into the cylindrical ceramic body 17, wiring can be more reliably performed. Etc. can be prevented.

Since the cylindrical ceramic body 17 also has a function of firmly supporting the ceramic substrate 11, even when the ceramic substrate 11 is heated to a high temperature, it can be prevented from warping due to its own weight. As a result, the object to be processed such as a silicon wafer can be prevented from being damaged, and the object to be processed can be heated to a uniform temperature.

The recess 16 is formed on the bottom surface 1 of the ceramic substrate 11.
1b is formed substantially in the vicinity of the center, and the shape thereof is not particularly limited as long as it has no corners in plan view, and may be an arbitrary shape such as a circle or an ellipse. desirable. This is because, if there is a corner in the concave portion 16, stress concentration occurs in that portion due to thermal shock or the like at the time of heating, and cracks and the like are likely to occur. The size of the ceramic substrate 11 is not particularly limited, and is appropriately adjusted in accordance with the size of the ceramic substrate 11, the pattern of the conductive circuit formed therein, and the like.

It is preferable that the concave portion 16 is formed at a depth from the bottom surface 11b of the ceramic substrate 11 in a range of 1 to 80% of its thickness. If it is less than 1%, it is difficult to stably fit the cylindrical ceramic body 17 into the concave portion 16, while if it exceeds 80%, a thin portion is formed on the ceramic substrate 11 and its strength is reduced, resulting in breakage. This is because there is a danger that they will be lost. The width of the recess 16 is preferably 1 to 20 mm. If the thickness is too large, heat is transferred to the cylindrical ceramic body, and a temperature distribution is generated on the heating surface.

The outer peripheral shape of the cylindrical ceramic body 17 in plan view does not need to be substantially the same as the recess 16, but may be the same. This is because the cylindrical ceramic body 17 is just fitted into the recess 16. That is, it is possible to make a state in which there is almost no gap between the side wall portion of the cylindrical ceramic body 17 and the inner wall of the concave portion 16.

The material of the cylindrical ceramic body 17 is desirably a material having an insulating property and a heat resistance that does not deform or change even when the ceramic substrate is heated. Examples of the material of the cylindrical ceramic body 17 include oxide ceramics such as alumina, silica, mullite and cordierite, nitride ceramics such as aluminum nitride and silicon nitride, and carbide ceramics such as silicon carbide.

The cylindrical ceramic body 17 is desirably brazed to the recess 16 of the ceramic substrate 11 by a brazing material 29. This is for firmly fixing the ceramic substrate 11 and the cylindrical ceramic body 17. In addition, brazing material 2
The material of No. 9 is not particularly limited, and examples thereof include aluminum brazing, gold brazing, silver brazing, phosphor copper brazing, brass brazing, nickel brazing, and palladium brazing. Further, in consideration of the adhesiveness between the brazing material 29 and the ceramic substrate 11, a deposited film 28 made of a material similar to the main component element of the brazing material 29 is formed between the ceramic substrate 11 and the brazing material 29. Is desirable. For example, the combination is gold for gold, palladium for palladium, silver for silver, nickel for nickel, and aluminum for aluminum.

The brazing material is JIS Z 3261-197.
Silver brazing specified in JIS Z 3266-1977
Gold brass specified in JIS Z 3267-1976, palladium brazed specified in JIS Z 3267-1976, JIS Z 3262-19
Brass brass specified in 77, JIS Z 3263-19
Aluminum alloy brazing specified in 77, JIS Z 3
Phosphor copper brazing specified in 264-1977, JIS Z
Phosphorus nickel braze specified in 3265-1976 can be used.

Specifically, silver brazing agents include Ag44-4
An alloy of 6% by weight, 14 to 16% by weight of Cu, 14 to 18% by weight of Zn, and 23 to 35% by weight of Cd.
u, an alloy of 34.5 to 35.5% by weight and Ni of 2.5 to 3.5% by weight;
0.5 wt%, Ni 39.5-40.5 wt% alloy,
As brass braze, Cu 46-49% by weight, Ni 10
An alloy containing 11% by weight and 0.3 to 1.0% by weight of Ag is exemplified.

As the aluminum alloy brazing, C
u 0.25% by weight or less, Si 6.8 to 8.2% by weight, M
n: 0.1% by weight or less, Fe: 0.8% by weight or less, the balance being A
1 alloy, nickel brazing alloy, Cr 13.0
~ 15.0% by weight, B2.7 ~ 4.0% by weight, Si3.
0 to 5.0% by weight, 4.0 to 5.0% by weight of Fe, C0.
An alloy of 6 to 0.9% by weight, the balance being Ni, and an example of phosphorus copper braze include an alloy of P4.8 to 5.3% by weight and the balance being Cu.

The thickness of the brazing material is preferably from 0.1 to 5 mm. This is because the adhesiveness is reduced if the thickness is too large or too small. The thickness of the deposited film is desirably 0.05 to 100 μm. This is because the adhesive strength is reduced if the thickness is too large or too small.

The film formed inside the concave portion 16 of the ceramic substrate 11 does not necessarily need to be the vapor deposition film 28, and after applying a coating liquid containing a material constituting the vapor deposition film 28, By performing the treatment, a film-like body made of the same material as the vapor-deposited film 28 may be formed.

The pattern of the resistance heating element 12 is shown in FIG.
In addition to the concentric circles shown in, the spiral, eccentric,
A combination of a concentric shape and a bent line shape can be used. The thickness of the resistance heating element 12 is 1 to 50.
μm is desirable, and the width is desirably 5 to 20 μm.

The resistance value can be changed by changing the thickness and width of the resistance heating element 12, but this range is the most practical. The resistance value of the resistance heating element 12 increases as its thickness decreases and its width decreases.

The resistance heating element 12 has a rectangular or elliptical cross section.
Any of a spindle shape and a kamaboko shape may be used, but a flat shape is desirable. This is because the flat surface is more likely to radiate heat toward the heating surface, so that the amount of heat propagation to the heating surface can be increased, and the temperature distribution on the heating surface is less likely to occur. In addition,
The resistance heating element 12 may have a spiral shape.

In the hot plate, the number of circuits comprising the resistance heating elements is not particularly limited as long as it is one or more. However, in order to uniformly heat the heating surface, it is desirable that a plurality of circuits are formed.

When the resistance heating element is formed inside the ceramic substrate, the formation position is not particularly limited. At least one layer is formed at a position from the bottom surface of the ceramic substrate to 60% of its thickness. Is preferred. This is because heat is diffused while propagating to the heating surface, and the temperature on the heating surface tends to be uniform.

When forming a resistance heating element inside a ceramic substrate, it is preferable to use a conductor paste made of metal or conductive ceramic. That is, when forming a resistance heating element inside a ceramic substrate, a conductive paste layer is formed on a green sheet, and then the green sheet is laminated and fired to produce the resistance heating element inside.

The conductive paste is not particularly limited, but preferably contains not only metal particles or conductive ceramics for ensuring conductivity, but also resin, solvent, thickener and the like.

As the metal particles, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. This is because these metals are relatively hard to oxidize and have a resistance value sufficient to generate heat.

As the conductive ceramic, for example,
Tungsten, molybdenum carbide and the like can be mentioned.
These may be used alone or in combination of two or more. The metal particles or conductive ceramic particles preferably have a particle size of 0.1 to 100 μm. If it is too fine, less than 0.1 μm, it is liable to be oxidized, while if it exceeds 100 μm, sintering becomes difficult and the resistance value becomes large.

Even if the shape of the metal particles is spherical,
It may be scaly. When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes. When the metal particles are scaly or a mixture of spherical and scaly, the metal oxide between the metal particles is easily retained, and the adhesion between the resistance heating element and the ceramic substrate is ensured. And the resistance value can be increased.

As the resin used for the conductor paste,
For example, an epoxy resin, a phenol resin, and the like can be given. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like. The ceramic substrate of the present invention is desirably used at 100 ° C. or higher, and more desirably at 200 ° C. or higher.

When a conductor circuit is formed inside the ceramic substrate, the conductor paste made of the metal or conductive ceramic used for forming the above-described resistance heating element can be used. A conductive paste or the like that is usually used when forming the conductive paste can be used.

The size of the conductor circuit is not particularly limited.
The width is preferably 0.1 to 50 mm, the thickness is preferably 0.1 to 500 μm, and the length is appropriately adjusted according to the distance from the end of the resistance heating element to the recess formed near the center of the ceramic substrate. .

The material of the ceramic substrate constituting the ceramic joined body is not particularly limited, and examples thereof include a nitride ceramic, a carbide ceramic, and an oxide ceramic.

Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride and the like. Further, as the carbide ceramic, metal carbide ceramic,
For example, silicon carbide, zirconium carbide, titanium carbide,
Examples include tantalum carbide and tungsten carbide.

Examples of the oxide ceramic include metal oxide ceramics such as alumina, zirconia, cordierite, and mullite. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Further, among nitride ceramics, aluminum nitride is most preferable. This is because the thermal conductivity is the highest at 180 W / m · K.

Further, the ceramic material may contain a sintering aid. As the sintering aid, for example,
Examples thereof include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering aids,
_{CaO, Y 2 O 3, Na} 2 O, Li 2 O, Rb 2 O are preferred. Their content is 0.1 to 20% by weight.
Is preferred. Further, it may contain alumina.

The above ceramic substrate has a brightness of JIS Z
It is desirable that the value based on the rule of 8721 is N4 or less. This is because a material having such brightness is excellent in radiant heat and concealing property. Further, such a ceramic substrate can accurately measure the surface temperature by using a thermoviewer.

Here, the lightness N is defined as 0 for an ideal black lightness, 10 for an ideal white lightness, and the brightness of the color between these black lightness and white lightness. Each color is divided into ten so that the perception of the color is equal, and displayed by symbols N0 to N10. And the actual measurement is N0-N
The comparison is made with the color chart corresponding to No. 10. In this case, the first decimal place is 0 or 5.

A ceramic substrate having such characteristics is characterized in that carbon is added to the ceramic substrate in an amount of 100 to 5000 p.
pm. There are two types of carbon, amorphous and crystalline.Amorphous carbon can suppress a decrease in volume resistivity of a ceramic substrate at a high temperature. Since the decrease in thermal conductivity at high temperatures can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

The amorphous carbon is, for example, C, H, O
Hydrocarbons, preferably saccharides, can be obtained by calcining in air, and graphite powder can be used as the crystalline carbon.
In addition, carbon can be obtained by thermally decomposing the acrylic resin under an inert atmosphere and then heating and pressurizing. However, by changing the acid value of the acrylic resin, it is possible to obtain a crystalline (non-crystalline) material. Can be adjusted.

The shape of the ceramic substrate is preferably a disk shape, and the diameter is preferably 200 mm or more.
mm or more is optimal. Disc-shaped ceramic substrates
This is because temperature uniformity is required, but the larger the diameter of the substrate, the more likely the temperature becomes non-uniform.

The thickness of the ceramic substrate is preferably 50 mm or less, more preferably 20 mm or less. Also, 1-5
mm is optimal. If the thickness is too thin, warpage is likely to occur when heating at a high temperature, while if it is too thick, the heat capacity becomes too large and the temperature rise / fall characteristics decrease.

The porosity of the ceramic substrate is preferably 0 or 5% or less. The porosity is measured by the Archimedes method. This is because a decrease in the thermal conductivity at a high temperature and the occurrence of warpage can be suppressed.

According to the present invention, the conductive wire 230 connected to the external terminal 23 via the socket 25 is
In order to prevent a short circuit or the like between them, it is desirable that they be covered with a heat-resistant insulating member. Examples of such an insulating member include materials used for the above-described cylindrical ceramic body.

Also, in the hot plate 10 shown in FIGS. 1, 2 and 3, the ceramic substrate 11 is usually fitted on the upper part of the supporting container (not shown), but in other embodiments, The ceramic substrate may be placed on the upper surface of a support container having a substrate receiving portion at the upper end, and fixed by a fixing member such as a bolt.

In the present invention, a thermocouple can be used as the temperature measuring element 180 as shown in FIG. This is because the temperature of the resistance heating element can be measured using a thermocouple, and the temperature and the amount of current can be changed based on the data to control the temperature.

The size of the junction of the lead wires of the thermocouple is preferably equal to or larger than the element diameter of each lead wire and 0.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. For this reason, the temperature controllability is improved and the temperature distribution on the heated surface of the wafer is reduced. As the thermocouple, for example,
As described in JIS-C-1602 (1980), K-type, R-type, B-type, E-type, J-type, and T-type thermocouples are included.

In addition to the thermocouples, examples of the temperature measuring means of the present invention include a temperature measuring element such as a platinum resistance thermometer and a thermistor, and a temperature measuring element using an optical means such as a thermoviewer. Means are also included.

When the above-mentioned thermoviewer is used, the temperature of the surface of the ceramic substrate can be measured, and the temperature of the surface of the object to be heated such as a silicon wafer can be directly measured. The accuracy of is improved.

The ceramic joined body of the present invention is used for manufacturing a semiconductor or inspecting a semiconductor.
Specifically, for example, an electrostatic chuck, a susceptor, a hot plate (ceramic heater) and the like can be mentioned.

The above-described hot plate is a device in which only a resistance heating element is provided inside a ceramic substrate, and thereby holds an object to be processed such as a silicon wafer on or separated from the surface of the ceramic substrate. It can be heated to a predetermined temperature or cleaned.

In the ceramic joined body of the present invention, when the conductor layer inside the ceramic substrate is an electrostatic electrode, it functions as an electrostatic chuck. FIG. 4 is a longitudinal sectional view schematically showing such an electrostatic chuck, and FIG.
FIG. 6 is a partial enlarged cross-sectional view, and FIG. 6 is a horizontal cross-sectional view schematically showing the vicinity of an electrostatic electrode formed on a ceramic substrate constituting an electrostatic chuck.

Inside the ceramic substrate 31 constituting the electrostatic chuck 30, semi-circular chuck positive / negative electrostatic layers 32a and 32b are disposed to face each other, and a ceramic dielectric film is formed on these electrostatic electrodes. 34 are formed. Further, inside the ceramic substrate 31, a resistance heating element 320 is provided.
Is provided so that an object to be processed such as a silicon wafer can be heated. The ceramic substrate 3
1, an RF electrode may be embedded as needed.

The above-mentioned electrostatic electrode is made of a noble metal (gold, silver, platinum,
It is preferably made of a metal such as palladium), lead, tungsten, molybdenum, nickel, or a conductive ceramic such as a carbide of tungsten or molybdenum. These may be used alone or in combination of two or more.

As shown in FIGS. 4 and 5, the electrostatic chuck 30 includes electrostatic electrodes 32 a, 3
2b, a through hole 33 is formed immediately below the end of each of the electrostatic electrodes 32a and 32b, and a ceramic dielectric film 34 is formed on the electrostatic electrode 32. Is configured.

That is, a concave portion 36 is formed near the center of the bottom surface of the ceramic substrate 31, a cylindrical ceramic body 37 is fitted into the concave portion 36, and the concave portion 36 is formed via the vapor deposition film 28 and the brazing material 29. Are joined.

Above the concave portion 36, a through hole 33,
330 are formed, and these through holes 33,
330 is an electrostatic electrode 32a, 32b, a resistance heating element 320
Is connected to an external terminal 360 inserted into the blind hole 390. One end of the external terminal 360 has
The socket 350 having the conductive line 331 is connected. The conductive wire 331 is drawn out from the through hole 370 to the outside.

In the case of the resistance heating element 320 having an end outside the recess 36, the via hole 39, the conductor circuit 380, and the through hole 330 are formed similarly to the hot plate 10 shown in FIGS. ', The end of the resistance heating element 320 is extended inside the cylindrical ceramic body 37 (see FIG. 5). Therefore, the external terminal 360 can be stored inside the cylindrical ceramic body 37 by inserting and connecting the external terminal 360 to the blind hole 390 exposing the through hole 330 ′.

When operating this electrostatic chuck,
A voltage is applied to each of the resistance heating element 320 and the electrostatic electrode. As a result, the silicon wafer placed on the electrostatic chuck is heated to a predetermined temperature and is electrostatically attracted to the ceramic substrate 31. Note that this electrostatic chuck is not necessarily required to
May not be provided.

FIG. 7 is a horizontal sectional view schematically showing an electrostatic electrode formed on a ceramic substrate of another electrostatic chuck. A chucking positive electrode electrostatic layer 72 including a semicircular portion 72a and a comb tooth portion 72b inside the ceramic substrate 71, and a chuck negative electrode electrostatic layer 73 also including a semicircular portion 73a and a comb tooth portion 73b, The comb teeth 72b and 73b are arranged to face each other so as to intersect with each other.

FIG. 8 is a horizontal sectional view schematically showing electrostatic electrodes formed on a ceramic substrate of still another electrostatic chuck. In this electrostatic chuck, chuck positive electrostatic layers 82a and 82b and chuck negative electrostatic layers 83a and 83b each having a shape obtained by dividing a circle into four inside a ceramic substrate 81.
Are formed. Also, two chuck positive electrode electrostatic layers 8
2a, 82b and two chuck negative electrode electrostatic layers 83a,
83b are formed so as to cross each other. In the case of forming an electrode in which a circular electrode or the like is divided, the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector.

Next, as an example of a method of manufacturing a semiconductor manufacturing / inspection apparatus of the present invention, a method of manufacturing a hot plate will be described with reference to FIG. FIGS. 9A to 9D
FIG. 3 is a cross-sectional view schematically showing a part of a method for manufacturing a ceramic heater having a resistance heating element inside a ceramic substrate.

(1) Green Sheet Preparation Step First, a ceramic powder is mixed with a binder, a solvent, and the like to prepare a paste, and a green sheet is prepared using the paste. Aluminum nitride or the like can be used as the above-mentioned ceramic powder, and a sintering aid such as yttria may be added as necessary.

The binder is preferably at least one selected from an acrylic binder, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.
Further, as the solvent, at least one selected from α-terpineol and glycol is desirable.

The paste obtained by mixing these is formed into a sheet by a doctor blade method to form a green sheet 5.
0 is produced. The thickness of the green sheet 50 is 0.1 to
5 mm is preferred. Next, a green sheet formed with a portion 630 serving as a via hole for connecting the end portion of the resistance heating element and the conductor circuit, and portions 63 serving as through holes for connecting the conductor circuit and the external terminals. 'To form a green sheet.

[0009] If necessary, a portion serving as a through hole for inserting a lifter pin for carrying the silicon wafer, a portion serving as a through hole for inserting a support pin for supporting the silicon wafer, a thermocouple, or the like. A portion serving as a bottomed hole for embedding the temperature measuring element is formed. The above-described processing may be performed on the through holes and the bottomed holes after forming a green sheet laminate described later, or after forming and firing the laminate.

The portions 630 serving as via holes and the portions 63 and 63 'serving as through holes may be filled with the above-mentioned paste to which carbon has been added. This is because carbon in the green sheet reacts with tungsten or molybdenum filled in the through holes to form carbides thereof.

(2) Step of Printing Conductive Paste on Green Sheet A conductive paste containing a metal paste or a conductive ceramic is printed on the green sheet on which a portion 630 to be a via hole is formed to form a conductive paste layer 62. I do.
These conductive pastes contain metal particles or conductive ceramic particles.

The average particle diameter of the metal particles such as tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. If the average particle size is less than 0.1 μm or more than 5 μm, it is difficult to print the conductive paste.

Examples of the conductive paste include 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol. And a composition (paste) obtained by mixing 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol.

Also, portions 63 and 6 to be through holes
On the green sheet on which the 3 'is formed, a conductive paste that is generally used when forming an electrostatic electrode or the like is printed to form a conductive paste layer 68.

(3) Green Sheet Laminating Step On the green sheet on which the conductor paste layer 62 has been printed, a plurality of green sheets 50 on which the conductor paste has not been printed are laminated, and under the green sheet, a conductor paste layer 68 is formed. Stack the sheets. Then, a plurality of green sheets 50 on which nothing is printed are further laminated below the green sheets (FIG. 9A).

At this time, the number of the green sheets 50 stacked on the upper side of the green sheet on which the conductive paste layer 62 is printed is made larger than the number of the green sheets 50 stacked on the lower side, and the formation position of the resistance heating element is changed to the bottom side. Eccentric in the side direction. Specifically, the number of stacked green sheets 50 on the upper side is preferably 20 to 50, and the number of stacked green sheets 50 on the lower side is preferably 5 to 20. In addition, the concave portion 66 may be formed in the lower green sheet, or may be formed after a firing step described later.

(4) Green Sheet Laminate Firing Step The green sheet laminate is heated and pressed to sinter the green sheet 50 and the inner conductive paste layers 62 and 68 (FIG. 9B). Heating temperature is 1000-20
The temperature is preferably 00 ° C., and the pressure is preferably 10 to 20 MPa. Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, or the like can be used.

(5) Attachment of Terminals and the Like As described above, after firing, a bottomed hole or a concave portion for inserting a temperature measuring element may be provided. These can be formed by performing blast processing such as drilling and sand blasting after surface polishing. Further, a blind hole 19 is formed to expose the through holes 13 and 13 'for connecting to the internal resistance heating element 12 (FIG. 9 (c)), and the blind hole 19 is inserted through solder or brazing material. The external terminals 23 are inserted, heated, and reflowed to connect the external terminals 23 to the through holes 13 and 13 '(FIG. 9D). The heating temperature is 9 for soldering.
The temperature is preferably from 0 to 450 ° C, and in the case of treatment with a brazing material, the temperature is preferably from 900 to 1100 ° C.

(6) Production of Cylindrical Ceramic Body Ceramic powder is put into a cylindrical mold, molded, and cut if necessary. This is heated at a heating temperature of
Sinter at ℃ and normal pressure. Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, or the like can be used. Next, the end face is polished and flattened.

Next, the external terminal 23 is connected to a conductive line 230 connected to a power supply via the socket 25 (FIG. 2).
reference). Further, a thermocouple or the like as a temperature measuring element is inserted into the formed bottomed hole and sealed with a heat-resistant resin or the like.

In this hot plate, a silicon wafer or the like is placed on the hot plate, or the silicon wafer or the like is held by lifter pins or support pins, and then the silicon wafer or the like is cleaned while being heated or cooled. Etc. can be performed.

When the hot plate is manufactured, an electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate. However, in this case,
It is necessary to form a through hole for connecting the electrostatic electrode and the external terminal, but it is not necessary to form a through hole for inserting the support pin.

When electrodes are provided inside the ceramic substrate, a conductive paste layer may be formed on the surface of the green sheet as in the case of forming the resistance heating element.

Hereinafter, the present invention will be described in more detail.

(Example 1) Production of hot plate (FIG. 1)
(1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O)
₃ : A paste obtained by mixing 4 parts by weight of yttria, an average particle diameter of 0.4 μm, 11.5 parts by weight of an acrylic resin binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of alcohol composed of 1-butanol and ethanol. A green sheet having a thickness of 0.47 mm was prepared by using the above method and forming by a doctor blade method.

(2) Next, the green sheet is heated to 80 ° C.
After drying for 5 hours, a portion serving as a through hole 15 for inserting a lifter pin for carrying a silicon wafer or the like as shown in FIG. 1, a portion 630 serving as a via hole,
In addition, portions 63 and 63 'to be through holes are formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, 3.5 parts by weight of an α-terpineol solvent, and 0.3 part by weight of a dispersant are mixed to form a conductor. Paste A was prepared.

Tungsten particles 100 having an average particle size of 3 μm
A conductive paste B was prepared by mixing 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant.

The conductor paste A was printed by screen printing on a green sheet having a portion 630 to be a via hole to form a conductor paste layer 62 for a resistance heating element. The printing pattern was a concentric pattern as shown in FIG. 1, the width of the conductive paste layer 62 was 10 mm, and the thickness thereof was 12 μm.

Subsequently, the conductor paste A was printed by screen printing on a green sheet having a portion 63 'to be a through hole, thereby forming a conductor paste layer 68 for a conductor circuit. The shape of the printing was band-shaped.

The conductive paste B is applied to the portions 630 to be via holes and the portions 63 and 6 to be through holes.
Filled 3 '.

On the green sheet on which the conductor paste layer 62 having been subjected to the above processing is printed, 37 green sheets on which the conductor paste has not been printed are superimposed, and under that, the green sheet on which the conductor paste layer 68 has been printed is superimposed. After
Furthermore, 12 green sheets on which the conductor paste was not printed were further stacked under them, and were stacked at 130 ° C. and a pressure of 8 MPa.

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and at 1890 ° C. under a pressure of 15M.
Hot pressing was performed at Pa for 10 hours to obtain a ceramic plate having a thickness of 3 mm. This was cut out into a disk shape of 230 mm, and a resistance heating element 12 having a thickness of 6 μm and a width of 10 mm was formed therein.
A ceramic plate having a conductor circuit 18 having a thickness of 20 μm and a width of 10 mm, a via hole 130 and through holes 13 and 13 ′ was formed.

(5) Next, after polishing the ceramic plate obtained in (4) with a diamond grindstone, a mask is placed, and the surface is blasted with glass beads to form a bottomed surface for a thermocouple on the surface. A hole 14 was provided.

(6) Further, in the vicinity of the center of the bottom surface of the ceramic plate, an outer diameter of 52 mm and an inner diameter of 39 m
A recess 16 having a depth of 2 m and a depth of 2 mm was formed. At this time, all the through holes 13 and 13 ′ are provided inside the recess 16. In addition, the inner wall of the concave portion has Ra =
0.5 μm.

(7) Inside the recess 16, the through hole 1
The portion where 3, 13 'is formed is cut out to form a blind hole, and silver wax (Ag: 40% by weight, C
The external terminals 23 were attached using u: 30% by weight, Zn: 28% by weight, Ni: 1.8% by weight, balance: other elements, reflow temperature: 800 ° C). Then, the conductive wire 230 was connected to the external terminal 23 via the socket 25.

(8) A thermocouple for controlling temperature is provided in the bottomed hole 1
4, filled with silica sol, cured and gelled at 190 ° C. for 2 hours, and provided with a concave portion 16 near the center of the bottom surface, inside which a resistance heating element 12, a conductor circuit 18, a via hole 1
A ceramic substrate 11 having 30 and through holes 13 and 13 'was obtained.

(9) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama, average particle size 1.1 μm), 4 parts by weight of yttria (average particle size 0.4 μm), 11.5 parts by weight of an acrylic resin binder, dispersant Using a composition obtained by mixing 0.5 parts by weight and 53 parts by weight of alcohol consisting of 1-butanol and ethanol, granules are produced by a spray-drying method, and the granules are placed in a pipe-shaped mold and subjected to normal pressure,
Sintered at 890 ° C., polished the end face, and set the surface roughness Ra =
An aluminum nitride pipe having a length of 200 mm, an outer diameter of 52 mm, and an inner diameter of 39 mm was manufactured at 0.1 μm.

(10) Thereafter, the pressure of 0.6 Pa was applied to the portion of the concave portion 16 of the ceramic substrate 11 where the cylindrical ceramic body 17 was fitted and the end face of the pipe using SV-4540 manufactured by Nippon Vacuum Engineering Co., Ltd. Sputtering at a temperature of 100 ° C. and a power of 200 W to form a deposited aluminum film 2
8 is formed, and JIS Z is formed on the aluminum deposition film 28.
3263-1977 Aluminum alloy brazing alloy of BA4343 (Cu: 0.25% by weight, Si: 6.8% by weight, F
e: 0.8% by weight, Mn: 0.1% by weight, Zn: 0.3
Weight%, balance: Al)
Heated and reflowed at ℃ to make aluminum nitride pipe 17
Was joined. In this example, B / A = 0.44.

Example 2 Manufacturing of Electrostatic Chuck (FIG. 4)
(1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttria (average particle size: 0.1 μm)
4 μm) A composition obtained by mixing 4 parts by weight, 12 parts by weight of an acrylic resin binder, 0.5 parts by weight of a dispersant, and 53 parts by weight of alcohol composed of 1-butanol and ethanol is molded by a doctor blade method. As a result, a green sheet having a thickness of 0.47 mm was obtained.

(2) Next, the green sheet is heated to 80 ° C.
After drying for 5 hours, a green sheet that has not been subjected to any processing, a green sheet provided with through holes for via holes for punching and connecting a resistance heating element and a conductor circuit, a conductor circuit and an external A green sheet provided with a through hole for a via hole for connecting a terminal and a green sheet provided with a through hole for a through hole for connecting an electrostatic electrode and an external terminal were produced.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, acrylic binder 3.0
By weight, 3.5 parts by weight of an α-terpineol solvent and 0.3 parts by weight of a dispersant were mixed to prepare a conductor paste A. A conductive paste B was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant.

(4) Conductive paste A was printed by a screen printing method on the surface of the green sheet provided with the through holes for via holes, and a conductive paste layer serving as a resistance heating element was printed. Further, the conductive paste A was printed by a screen printing method on the surface of the green sheet provided with through holes for through holes for connecting the conductor circuit and the external terminals, and a conductor paste layer serving as a conductor circuit was printed. . Further, a conductive paste layer composed of an electrostatic electrode pattern having the shape shown in FIG. 6 was formed on a green sheet that had not been subjected to any processing.

Further, the conductive paste B was filled in the through hole for connecting the resistance heating element and the conductor circuit and the through hole for connecting the external terminal to the via hole.

Next, the green sheets subjected to the above treatment were laminated. First, on the upper side (heating surface side) of the green sheet on which the conductive paste layer serving as a resistance heating element is printed, 34 green sheets having only a portion to be a through hole 33 are laminated, and immediately below (the bottom surface) Side), a green sheet on which a conductor paste layer to be a conductor circuit is printed is laminated, and further, through holes 33, 33
Twelve green sheets in which portions of 0, 330 'were formed were laminated. On the top of the green sheet thus laminated, a green sheet on which a conductor paste layer composed of an electrostatic electrode pattern is printed is laminated, and two unprocessed green sheets are further laminated thereon. The laminate was formed by pressure bonding at 130 ° C. and a pressure of 8 MPa.

(5) Next, the obtained laminate was degreased in a nitrogen gas at 600 ° C. for 5 hours, and then hot-pressed at 1890 ° C. and a pressure of 15 MPa for 3 hours to obtain a thickness of 3 m.
m ceramic plate was obtained. This was cut out into a disk shape having a diameter of 230 mm, and the thickness was 5 μm and the width was 2.4
mm heating element 320, thickness 20 μm, width 10 m
A ceramic plate having a m-th conductive circuit 380 and a 6 μm-thick chuck positive electrode electrostatic layer 32a and a chuck negative electrode electrostatic layer 32b.

(6) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Co., average particle size 1.1 μm), 4 parts by weight of yttria (average particle size 0.4 μm), 11.5 parts by weight of acrylic resin binder, dispersant Using a composition obtained by mixing 0.5 parts by weight and 53 parts by weight of alcohol consisting of 1-butanol and ethanol, granules are produced by a spray-drying method, and the granules are placed in a pipe-shaped mold and subjected to normal pressure,
Sintered at 890 ° C., polished the end face, and set the surface roughness Ra =
An aluminum nitride pipe having a length of 200 mm, an outer diameter of 52 mm, and an inner diameter of 39 mm was manufactured at 0.1 μm.

(10) Thereafter, a pressure of 0.6 Pa was applied to the portion of the concave portion 16 of the ceramic substrate 11 where the cylindrical ceramic body 17 was fitted and the end face of the pipe using SV-4540 manufactured by Nippon Vacuum Engineering Co., Ltd. Sputtering at a temperature of 100 ° C. and a power of 200 W to form a deposited aluminum film 2
8 is formed, and JIS Z is formed on the aluminum deposition film 28.
3263-1977 Aluminum alloy brazing alloy of BA4343 (Cu: 0.25% by weight, Si: 6.8% by weight, F
e: 0.8% by weight, Mn: 0.1% by weight, Zn: 0.3
Weight%, balance: Al)
Heated and reflowed at ℃ to make aluminum nitride pipe 17
Was joined.

(Example 3) A ceramic joined body was manufactured in the same manner as in Example 1 except that the aluminum deposition film 28 was not formed by sputtering in the recess 16 or the like.

Example 4 A ceramic joined body was manufactured in the same manner as in Example 1 except that the concave portion 16 was not formed.

(Examples 5 to 8) Gold brazing (Example 5), palladium brazing (Example 6), nickel brazing (Example 7), phosphor copper brazing (Example 8) were used as brazing materials. In the same manner as in Example 1, a ceramic joined body was manufactured. Gold solder is B Au-3 (Au: 81.5 to 82.5% by weight, balance: Ni) according to JIS Z 3266-1977, and the heating reflow temperature is 950 ° C. Palladium wax is JIS Z 3267-197
6, B Pd-1 (Pd: 4.5% by weight, Ag: 68% by weight, Cu: 26% by weight), and a reflow temperature of 8
00 ° C. In addition, Ni brazing is JIS Z 32
65-1976, Cr: 2.75% by weight, Si: 3.
The reflow temperature was 0% by weight, Fe: 4.0% by weight, C: 0.6% by weight, balance: Ni, and the reflow temperature was 975 ° C. The phosphorus copper braze was P: 4.8% by weight, the balance: Cu, and the reflow temperature was 785 ° C. In addition, since the reflow temperature is higher than that of silver brazing for the electrode bonding, the same type of brazing material having a slightly higher reflow temperature was used for the electrode bonding.

Example 9 A ceramic joined body was manufactured in the same manner as in Example 1 except that the thickness of the cylindrical ceramic body was changed to 0.5 mm.

(Example 10) The outer diameter of the cylindrical ceramic body was 52 mm and the inner diameter was 51 mm (thickness: 0.5 mm).
Example 1 except that the recess on the bottom surface of the plate-shaped ceramic body had an outer diameter of 52 mm, an inner diameter of 51 mm, and a depth of 2 mm.
In the same manner as in the above, a ceramic joined body was manufactured.

(Example 11) The outer diameter of the cylindrical ceramic body was 93 mm, the inner diameter was 39 mm (width: 27 mm), and the recess on the bottom surface of the plate-shaped ceramic body had an outer diameter of 93 mm and an inner diameter of 3 mm.
A ceramic joined body was manufactured in the same manner as in Example 1 except that the thickness was 9 mm and the depth was 2 mm.

(Example 12) A ceramic joined body was manufactured in the same manner as in Example 1 except that the end of the cylindrical ceramic body was not polished, but was cut, and the surface roughness was changed to Ra = 8 µm. did.

Comparative Example 1 Yttrium Nitrate (2.61)
× 10 ⁻⁴ mol / cc) aqueous solution was applied, and a cylindrical ceramic body was put in the concave portion of the ceramic substrate, and then joined by heating to 1850 ° C. A joined body was manufactured.

The following evaluation tests were performed on the ceramic joined bodies according to Examples 1 to 12 and Comparative Example 1. The results are shown in Table 1 below.

(1) Heat cycle test A heat cycle test in which the process of heating to 450 ° C. is repeated after holding at 25 ° C. is performed, and the number of heat cycles until the cylindrical ceramic body and the ceramic substrate are broken is measured. did.

(2) Uneven Color Unevenness of the surface was visually inspected. (3) Measurement of breaking strength A bending strength test was performed to measure the breaking strength of the joint surface. (4) Measurement of temperature difference The temperature difference between the maximum temperature and the minimum temperature of the heated surface was measured. Measurement was performed using a thermoviewer (IR6201 manufactured by Nippon Datum Co.
2-0012) was used.

[0148]

[Table 1]

As is clear from the results shown in Table 1, when bonding was performed via a metal layer as in the example, there was no color unevenness on the surface and the temperature uniformity on the heating surface of the ceramic substrate. Excellent. On the other hand, in Comparative Example 1, the temperature of the heating surface was not uniform. It is presumed that since the bonding using ceramics was performed, color unevenness of the surface occurred, and the amount of radiant heat varied depending on the location, resulting in non-uniformity of the temperature of the heating surface.

As the brazing material, an aluminum alloy brazing is optimal. It is presumed that aluminum is soft and ductile. Further, by forming the deposited film on the concave portion of the ceramic substrate or the cylindrical ceramic body, the bonding strength is increased.

Further, when the cylindrical ceramic body is thin, the internal temperature tends to decrease. When the plate-shaped ceramic body is thinner than 25 mm, the temperature of the heating surface becomes uneven. In particular, B / A affects the temperature distribution on the heating surface. When B / A is large, heat conduction to the cylindrical ceramic body is large due to the metal layer, and the temperature of the heating surface of the ceramic substrate is high. When B / A is small, the temperature inside the cylindrical ceramic body tends to decrease, and the temperature of the heating surface of the ceramic substrate tends to decrease.

[0152]

As described above, the semiconductor manufacturing / inspection apparatus using the ceramic joined body according to the present invention has a large joint strength and excellent uniformity of the temperature of the heated surface.

[Brief description of the drawings]

FIG. 1 is a bottom view schematically showing a hot plate which is an example of a ceramic joined body of the present invention.

FIG. 2 is a cross-sectional view of the hot plate shown in FIG.

FIG. 3 is a partially enlarged sectional view schematically showing a ceramic substrate constituting the hot plate shown in FIG. 1;

FIG. 4 is a longitudinal sectional view schematically showing a ceramic substrate constituting the electrostatic chuck according to the present invention.

FIG. 5 is a partially enlarged sectional view schematically showing a ceramic substrate constituting the electrostatic chuck shown in FIG. 4;

FIG. 6 is a horizontal sectional view schematically showing an example of an electrostatic electrode embedded in a ceramic substrate.

FIG. 7 is a horizontal sectional view schematically showing another example of an electrostatic electrode embedded in a ceramic substrate.

FIG. 8 is a horizontal sectional view schematically showing still another example of an electrostatic electrode embedded in a ceramic substrate.

FIGS. 9A to 9D are cross-sectional views schematically showing an example of a method for manufacturing a ceramic substrate constituting a ceramic joined body of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Hot plate 11 Ceramic substrate 11a Heating surface 11b Bottom surface 12 Resistance heating element 12a Resistance heating element end 13, 13 'Through hole 14 Bottom hole 15 Through hole 16 Depression 17 Cylindrical ceramic body 18 Conductor circuit 19 Bag hole 130 Via hole 180 temperature measuring element

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H05B 3/68 H05B 3/68 F term (reference) 3K034 AA04 AA16 AA35 BA06 BA14 BB06 BB14 BC16 BC17 DA04 EA04 3K092 QA05 QB02 QB18 QB30 QB44 QB74 RF03 RF11 VV09 VV22 VV40 4G026 BA16 BB16 BD04 BE03 BF15 BF16 BF17 BF18 BF20 BG02 BH13 5F031 CA02 HA02 HA16 HA33 HA37 MA28 MA32 MA33 5F103 BB42 RR04

Claims (12)

[Claims] 1. A ceramic joined body, wherein a plate-shaped ceramic body and a cylindrical ceramic body are integrated via a metal layer. 2. The ceramic joined body according to claim 1, wherein the metal layer includes a vapor deposition layer and a brazing material layer. 3. The ceramic joined body according to claim 1, wherein a recess is formed in the plate-shaped ceramic body, and a cylindrical ceramic body is fitted in the recess. 4. The brazing material constituting the brazing material layer is at least one selected from aluminum alloy brazing, gold brazing, silver brazing, phosphor copper brazing, brass brazing, nickel brazing, and palladium brazing. 1 for any of 1-3
3. The ceramic joined body according to item 1. 5. The ceramic joined body according to claim 1, wherein the metal forming the vapor deposition layer is at least one selected from aluminum, a noble metal, copper, and nickel. 6. The thickness of the plate-shaped ceramic body is 25 m
m or less, and the width of the cylindrical ceramic body which is in contact with the plate-shaped ceramic body is 1 mm or more, and the ceramic joined body according to any one of claims 1 to 5. 7. A relation between a contact area B between the cylindrical ceramic body and the plate-shaped ceramic body and an area A surrounded by the cylindrical ceramic body is B / A = 0.1 to 0.8. The ceramic joined body according to any one of claims 1 to 6. 8. The ceramic joined body according to claim 1, wherein a surface roughness of a portion of the plate-shaped ceramic body that comes into contact with the cylindrical ceramic body is 5 μm or less in Ra. 9. The ceramic joined body according to claim 1, wherein a surface roughness of a portion of the cylindrical ceramic body that comes into contact with the plate-shaped ceramic body is 5 μm or less in Ra. 10. The ceramic joined body according to claim 1, wherein a conductive layer is formed on the plate-shaped ceramic body. 11. The ceramic joined body according to claim 1, wherein the conductive layer is a resistance heating element and functions as a hot plate. 12. The ceramic joined body according to claim 1, wherein the conductive layer is an electrostatic electrode and functions as an electrostatic chuck.