JP2003077781A - Ceramic heater for semiconductor manufacturing/ inspecting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing/inspecting device ceramic heater excellently usable over a long period of time without generating cracks or the like on a ceramic substrate in a semiconductor manufacturing/inspecting device process. SOLUTION: The ceramic heater for a semiconductor manufacturing/ inspecting device has the ceramic substrate provided with a resistance heating element in the inside. A through-hole provided with a blind hold is formed right below an end of the resistance heating element, an external terminal is inserted to the blind hole, and the external terminal is fixed to the blind hole by a member for fixing the external terminal inserted to the blind hole similarly.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in a hot plate (ceramic heater), an electrostatic chuck, a susceptor, etc., and has a semiconductor ceramic substrate having a resistance heating element provided therein and a semiconductor manufacturing / inspecting apparatus. Ceramic heaters for automobiles.

[0002]

2. Description of the Related Art In semiconductor manufacturing / inspection equipment including etching equipment and chemical vapor deposition equipment, heaters and electrostatic chucks using metal base materials such as stainless steel and aluminum alloy have been conventionally used. Has been used.

However, such a metal heater is
There were the following problems. First of all, because it is made of metal,
The thickness of the heater plate should be as thick as about 15 mm. This is because, in a thin metal plate, warping, distortion, etc. may not occur due to thermal expansion due to heating, and the silicon wafer placed on the metal plate may be damaged or tilted. However, when the thickness of the heater plate is increased, there is a problem that the weight of the heater becomes heavy and the heater becomes bulky.

Further, the temperature of a surface (hereinafter referred to as a heating surface) for heating an object to be heated such as a silicon wafer is controlled by changing the voltage and the amount of current applied to the resistance heating element. Since it is thick, the temperature of the heater plate does not quickly follow changes in voltage and current amount, and there is a problem that temperature control is difficult.

Therefore, in Japanese Patent Laid-Open No. 4-324276, aluminum nitride, which is a non-oxide ceramic having high thermal conductivity and high strength, is used as a substrate, and a resistance heating element and tungsten are used in the aluminum nitride substrate. Has been proposed, and a ceramic heater in which a dichrome wire is brazed to these as external terminals is proposed.

In such a ceramic heater, since a ceramic substrate having high mechanical strength even at high temperature is used, the thickness of the ceramic substrate can be reduced to reduce the heat capacity, and as a result, voltage and current can be reduced. The temperature of the ceramic substrate can be quickly made to follow the change in the amount.

[0007]

However, when the external terminals are bonded to the through holes formed in the ceramic heater by brazing or the like, the electrical connection between the external terminals and the through holes is made due to deterioration of the brazing material or the like. It was sometimes damaged. Further, the brazing material falls off, which causes the generation of particles.

In order to solve such a problem, a bottomed hole having a thread groove is formed in the through hole, and an external terminal having a threaded portion at one end is screwed into the bottomed hole. The connection between the external terminal and the resistance heating element can be reliably ensured.

However, when the ceramic heater as described above is used in the semiconductor manufacturing / inspecting process, the temperature rising and cooling processes are repeated, which causes a difference in physical properties such as a thermal expansion coefficient between the ceramic substrate and the external terminal. Then, a crack may be generated in the through hole or the ceramic substrate, and corrosion may progress from that portion, or particles may be generated.

The present invention has been made to solve the above-mentioned problems, and can more reliably make a connection with an external terminal of a resistance heating element formed inside the ceramic heater for a semiconductor manufacturing / inspecting apparatus. It is an object of the present invention to provide a possible ceramic heater for semiconductor manufacturing / inspection equipment.

[0011]

A ceramic heater for a semiconductor manufacturing / inspecting apparatus according to the present invention is a ceramic heater for a semiconductor manufacturing / inspecting apparatus having a ceramic substrate having a resistance heating element provided therein. Immediately below the end of the heating element, a through hole with a bottomed hole is formed.
The external terminal is inserted into the bottomed hole, and the external terminal is fixed to the bottomed hole by an external terminal fixing member that is also inserted into the bottomed hole. .

In the ceramic heater for semiconductor manufacturing / inspection equipment of the present invention (hereinafter, simply referred to as ceramic heater),
The external terminal is fixed to the bottomed hole by the external terminal fixing member that is inserted into the bottomed hole, so even if the temperature rise / fall is repeated in the semiconductor manufacturing / inspection process, the external terminal is fixed. Since the member can absorb the difference in the coefficient of thermal expansion between the ceramic substrate and the external terminal, a crack or the like occurs due to the difference in the coefficient of thermal expansion between the ceramic substrate and the external terminal in the semiconductor manufacturing / inspection process. Without, the ceramic substrate can be protected.

Further, since the external terminal fixing member can absorb the impact, even if an external force is applied to the external terminal in a lateral direction or a downward direction, an excessive force is applied to the through hole and the external terminal. No force is applied and they are not damaged.

Furthermore, since the external terminal fixing member is only arranged in the bottomed hole, it can be relatively easily arranged, and the external terminal fixing member also secures the electrical connection. Therefore, a ceramic heater with high connection reliability can be obtained.

A thread groove is formed in the bottomed hole,
An external terminal having a threaded portion is screwed into the bottomed hole, a gap is formed between the wall surface of the bottomed hole and the external terminal, and the leaf spring is also inserted into the bottomed hole. It is desirable that the external terminal is fixed to the bottomed hole by the external terminal fixing member.

According to such a method, connection failure does not occur due to deterioration of the brazing material and the like, as in the case of adhering the external terminal to the through hole via the brazing material or the like.
A good connection can be maintained for a long period of time. Further, since the external terminals can be easily removed from the ceramic substrate, it is possible to replace only the deteriorated external terminals and use them as a new ceramic heater.

Further, since a space is formed between the external terminal and the through hole, physical properties such as thermal expansion coefficient of the external terminal and the through hole are different from those in the case where the external terminal and the through hole are completely adhered. Is less affected by the difference between the two, and inconveniences such as cracks in the through holes and the ceramic substrate are less likely to occur.

A fixing member for an external terminal is provided in the bottomed hole, and an external terminal having a fixing head portion larger than the diameter of the shaft portion at one end thereof is inserted into the bottomed hole. At the same time, it is preferable that the external terminal is fixed to the bottomed hole by the external terminal fixing member, which is also a leaf spring inserted in the bottomed hole.

Also in this case, the external terminal fixing member made of a leaf spring can absorb the difference in the coefficient of thermal expansion between the external terminal and the through hole, and a gap is formed between the two. Therefore, it is less affected by the difference in physical properties such as the coefficient of thermal expansion, and the inconvenience such as cracks in the through holes and the ceramic substrate is less likely to occur.
Further, even when the external terminal fixing member is inserted into the bottomed hole, the external terminal can be easily attached / detached, and the ceramic heater can be favorably used for a long period of time.

An electrostatic electrode is formed on the ceramic heater of the present invention, and it is desirable that the ceramic heater functions as an electrostatic chuck provided with a heating means. Even in electrostatic chucks,
Since the same problem occurs, if the electrostatic chuck has such a structure, in the semiconductor manufacturing / inspection process,
It can be used preferably.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described below with reference to the embodiments. The present invention is not limited to this description.

First, the ceramic heater for semiconductor manufacturing / inspection equipment of the present invention will be described. The ceramic heater of the present invention is a ceramic heater for a semiconductor manufacturing / inspection apparatus, which has a ceramic substrate having a resistance heating element provided therein, and has a bottomed hole immediately below the end of the resistance heating element. A through hole is formed, the external terminal is inserted into the bottomed hole, and the external terminal is fixed to the bottomed hole by an external terminal fixing member that is also inserted into the bottomed hole. It is characterized by.

Next, an embodiment of the ceramic heater of the present invention will be described with reference to the drawings. Figure 1
FIG. 2 is a plan view schematically showing an example of the ceramic heater of the present invention, FIG. 2 is a cross-sectional view thereof, and FIG. 3 shows an internal shape of a through hole formed in the ceramic heater of the present invention. It is an expansion horizontal sectional view which shows typically.

Inside the ceramic substrate 11, as shown in FIG. 2, a resistance heating element 12 composed of a plurality of circuits is embedded and a bottomed hole 14 is formed. Bottomed hole 1
4 is for measuring the temperature of the ceramic substrate 11,
A temperature measuring element (not shown) to which a lead wire (not shown) is connected is embedded.

As shown in FIG. 1, the resistance heating element 12 has resistance heating elements 12a to 12d, which are circular arc patterns repeatedly formed so as to draw a part of a concentric circle, on the outermost periphery of the ceramic substrate 11. And the resistance heating elements 12e to 12h, which are concentric circular patterns partially cut inside
Are arranged.

The outermost resistance heating element 12a is formed by repeatedly forming arc-shaped patterns obtained by dividing a concentric circle into four in the circumferential direction, and the ends of adjacent arcs are connected by bending lines to form a series of circuits. ing. Then, four circuits of the resistance heating elements 12a to 12d, which have the same pattern as this, are formed close to each other so as to surround the outer circumference, and form an annular pattern as a whole.

Further, the end portions of the resistance heating elements 12a to 12d are formed inside the annular pattern in order to prevent the generation of cooling spots, etc. Therefore, the end portion of the outer circuit is the inner portion. Has been extended toward.

Resistance heating elements 12a-1 formed on the outermost periphery
Inside the 2d, resistance heating elements 12e to 12h each having a circuit of a concentric pattern, a part of which is cut, are formed. In the resistance heating elements 12e to 12h, a series of circuits are configured by connecting the ends of adjacent concentric circles with resistance heating elements that are linear in sequence.

Further, the resistance heating elements 12a to 12d, 12
Between e, 12f, 12g, and 12h, there is a strip (annular shape)
The heating element non-formation area of is provided, and in the center part,
A circular heating element non-forming area is provided.

Therefore, as a whole, annular resistance heating element forming regions and heating element non-forming regions are alternately formed from the outside to the inside, and these regions are formed in the size (caliber of the ceramic substrate). ), The thickness, etc., the temperature of the heating surface can be made uniform by appropriately setting.

A through hole 19 is provided at the end of the resistance heating element 12 formed inside the ceramic substrate 11, and the through hole 19 has a bottomed hole 20 having an opening at its bottom surface. The bottom surface of the through hole 19 is formed with a thread groove on the wall surface of the bottomed hole 20. Then, the external terminal 13 having a threaded portion at its tip is screwed into the bottomed hole 20, and one end of the external terminal 13 is in contact with the bottom of the bottomed hole 20. The diameter of the external terminal 13 is slightly smaller than the diameter of the bottomed hole 20. Therefore, a gap is formed between the wall surface of the bottomed hole 20 and the external terminal 13.

An external terminal fixing member 21 is interposed in the space between the wall surface of the bottomed hole 20 and the external terminal 13. Further, as shown in FIG. 3, the external terminal fixing member 2
1 is bent by being pressed against the external terminal 13 and holds the external terminal 13 in the bottomed hole 20 by the elastic force of the external terminal fixing member 21. Therefore, as compared with the case where the external terminal and the through hole are completely adhered to each other, the influence of the difference in physical properties such as thermal expansion coefficient between them is less likely to occur, and cracks or the like occur in the through hole 19 and the ceramic substrate 11. There is little fear.

Further, the through hole 19 and the external terminal 1
By configuring 3 as described above, not only electrical connection is made by the upper wall surface of the bottomed hole 20 formed in the through hole 19 and the tip portion of the external terminal 13, but also an external terminal fixing member. Through hole 19 and external terminal 13 can be connected to each other, and the electrical connection between the resistance heating element and the external terminal can be reliably ensured.

FIG. 4 is a cross-sectional view schematically showing another example of the ceramic heater of the present invention, and FIG. 5 is a schematic view of the internal shape of the through hole formed in the ceramic heater shown in FIG. It is an enlarged horizontal sectional view shown in FIG.

A through hole 39 is provided at an end of the resistance heating element 12 formed inside the ceramic substrate 31, and a through hole 39 has a bottomed hole 40 having an opening at its bottom surface. As shown in FIG. 5, the external terminal fixing member 41 is installed at three places on the wall surface of the bottomed hole 40. The external terminal 33 is pushed by the external terminal fixing member 41 by pushing the fixing head portion 33a of the external terminal 33 inward from the portion of the bottomed hole 40 where the external terminal fixing member 41 is installed. It is fixed. Further, one end of the external terminal 33 is in contact with the bottom of the bottomed hole 40.

Further, as shown in FIG. 5, the external terminal fixing member 41 formed at three places is bent by being pressed against the external terminal 33, and the elastic force of the external terminal fixing member 41 is exerted. Thus, the external terminal 33 is held in the bottomed hole 40. Therefore, the external terminal 33 is fixed from both the vertical direction and the horizontal direction by the external terminal fixing member 41, and a ceramic heater with high connection reliability can be realized.

By configuring the through hole 39 and the external terminal 33 as described above, electrical connection is established by the upper wall surface of the bottomed hole 40 formed in the through hole 39 and the tip of the external terminal 33. In addition to the external terminal fixing member 41, the through hole 39 and the external terminal 3
3 can be connected, and the resistance heating element 1 can be reliably connected.
The electrical connection between the external terminal 33 and the external terminal 33 can be secured, and the external terminal 33 can be easily detached from the through hole 39 by expanding the external terminal fixing member using a jig.

The ceramic heater 30 shown in FIG.
Since the configuration other than the external terminal fixing member 41, the external terminal 33, and the through hole 39 is the same as that of the ceramic heater 10 shown in FIGS. 1 and 2, description thereof will be omitted.

A plate spring or the like is desirable as the external terminal fixing member, and examples of the material of the plate spring include stainless steel, inconel, steel, aluminum, nickel, copper and the like. This is because it is easy to process and has excellent mechanical properties.

Since the through hole 19 contains a conductive ceramic or the like whose physical properties such as a thermal expansion coefficient are not so different from those of the ceramic substrate, cracks are unlikely to occur and a highly reliable ceramic heater can be obtained. The diameter is preferably 0.1 to 10 mm. This is because it is possible to prevent cracks and distortions while preventing disconnection.

The diameter of the bottomed hole formed in the through hole for connecting the external terminal is preferably 0.1 to 20 mm. If it is less than 0.1 mm, a bottomed hole may be formed,
It becomes difficult to install the external terminal fixing member,
This is because if it exceeds mm, it becomes impossible to firmly fix the external terminal of a size that is normally used. Further, heat is dissipated through the external terminals, which makes it difficult to uniformly heat the semiconductor wafer.

Further, the depth of the bottomed hole is preferably 0.1 mm or more and 80% or less of the thickness of the ceramic substrate. If it is less than 0.1 mm, the external terminal cannot be firmly fixed, and if it exceeds 80% of the thickness of the ceramic substrate, not only is it difficult to install the external terminal fixing member, but also the external terminal is fixed. This is because it cannot be firmly fixed.

The material of the external terminal is not particularly limited,
Examples include metals such as nickel and kovar. Further, as the external terminal, it is desirable to use one having a screw portion, one having a fixing head portion at one end portion, or the like. The shape of the external terminal having the fixing head portion is not particularly limited as long as the diameter of a part of the fixing head portion is larger than the diameter of the shaft portion, and, for example,
Examples include cross-section mushroom type and arrow type as shown in FIG.

The size of the external terminal is not particularly limited because it is appropriately adjusted depending on the size of the ceramic substrate used, the size of the resistance heating element and the like.

A socket 22 having a conductive wire 25 is attached to these external terminals 13, and the conductive wire 25 is drawn out from a through hole formed in a bottom plate (not shown) to a power source or the like ( (Not shown).

On the other hand, a temperature measuring element (not shown) such as a thermocouple having a lead wire is inserted into the bottomed hole 14 formed on the bottom surface 11b of the ceramic substrate 11, and a heat resistant resin, ceramic (silica gel, etc.) is used. Etc. are used for sealing. Further, a through hole 15 for inserting a lifter pin (not shown) is provided in a portion near the center of the ceramic substrate 11.

The lifter pin is designed so that an object to be processed such as a silicon wafer can be placed on the lifter pin and moved up and down, whereby the silicon wafer can be transferred to a transfer machine (not shown) or transferred. It is possible to receive a silicon wafer from the same, place the silicon wafer on the heating surface 11a of the ceramic substrate 11 to heat it, or to support and heat the silicon wafer in a state of being separated from the heating surface 11a by 50 to 2000 μm. You can do it.

A state in which a through hole or a recess is provided in the ceramic substrate 11 and a support pin having a pointed or hemispherical tip is inserted into the through hole or the recess, and then the support pin is slightly projected from the ceramic substrate 11. The heating surface 1 is fixed by fixing it with
You may heat in the state spaced apart from 1a by 50-2000 micrometers.

FIG. 6 is a sectional view schematically showing a case where the ceramic heater of the present invention is fitted into a support container and used as a hot plate unit. When the ceramic heater 10 is fitted into the substantially cylindrical support container 50 via the heat insulating ring 45 having an L-shaped cross section, the hot plate unit 100 is obtained. In the support container 50, a substantially cylindrical outer frame portion and a disc-shaped bottom portion are integrally formed.
In this support container 50, inside the outer frame of the substantially cylindrical shape,
An annular substrate receiving portion 43 that supports the ceramic heater 10 and the heat insulating ring 45 is provided. The heat insulating ring 45 and the ceramic heater 10 are fixed to each other by the board receiving portion 43 and the fixing metal fitting 47 via the bolt 48.
That is, the fixing member 47 is attached to the bolt 48, and the ceramic heater 10 and the like are pressed and fixed. A coolant introduction pipe 49 is attached to the bottom of the support container 50 so that a coolant or the like for forced cooling can be introduced into the inside of the support container 50, and the introduced coolant for forced cooling is also provided. A through hole 46a for discharging the refrigerant or the like is formed. Also, the ceramic heater 1
0 and the bottom of the support container 50 are supported and fixed so as to be substantially parallel to each other. Although not clearly shown, the connection between the resistance heating element 12 and the external terminal 13 is as shown in FIG.
And the method of the present invention described with reference to FIG.

Further, the hot plate unit 100 of the present invention may be formed with an inner bottom plate (not shown). The inner bottom plate is formed for the purpose of fixing wiring and the like, heat shielding, etc. Further, the inner bottom plate has a refrigerant introduction pipe 49,
A through hole is formed so as not to interfere with the guide tube 42 or the like that protects the lifter pin (not shown). In addition,
In the present invention, the insole plate is not essential. That is, even if the support container 50 does not have the insole plate,
It functions as the hot plate unit of the present invention.

Further, although the bottomed hole 14 and the through hole 15 are formed inside the ceramic substrate 11, the through hole 15
A semiconductor wafer 29, which is an object to be heated, can be supported by inserting a lifter pin (not shown) into the, and the semiconductor wafer 29 can be moved by moving the lifter pin up and down. Delivery is possible. The temperature measuring element 1 to which the lead wire 170 for measuring the temperature of the ceramic substrate 11 is connected to the bottomed hole 14.
7 is embedded.

Further, the external terminal 13, the socket 22, the conductive wire 25, etc. may be protected by a tubular member (cylindrical body). As a result, the hot plate unit 100 is surrounded by an atmosphere containing a reactive gas, a halogen gas, or the like, and even if the reactive gas or the like easily enters the inside of the support container, the inside of the tubular body is The wiring, etc. will not be corroded. The wiring 170 from the temperature measuring element 17 is also preferably protected by an insulator or the like. It is desirable that an inert gas or the like is slowly flown into the cylindrical body so that the reactive gas, the halogen gas, or the like does not flow into the cylindrical body. Thereby, the corrosion of the conductive wire can be prevented more reliably.

Further, since the cylindrical body also has a function of firmly supporting the ceramic substrate 11, it is possible to prevent the ceramic substrate 11 from warping due to its own weight even when it is heated to a high temperature. As a result, it is possible to prevent damage to an object to be processed such as a silicon wafer and to heat the object to be processed to a uniform temperature.

The shape of the ceramic substrate 11 is preferably a disc shape as shown in the drawing, and its diameter is preferably 200 mm or more, and optimally 250 mm or more. The disk-shaped ceramic substrate 11 is required to have uniform temperature.
This is because the larger the diameter of the substrate, the more likely the temperature becomes uneven.

The thickness of the ceramic substrate 11 is preferably 50 mm or less, more preferably 20 mm or less. Also, 1
~ 5 mm is optimal. This is because if the thickness is too thin, warpage is likely to occur when heating at high temperatures, while if it is too thick, the heat capacity becomes too large and the temperature raising / lowering characteristics deteriorate.

The porosity of the ceramic substrate 11 is 0.
Alternatively, it is preferably 5% or less. The porosity is measured by the Archimedes method. This is because it is possible to suppress the decrease in thermal conductivity at high temperatures and the occurrence of warpage.

The brightness of the ceramic substrate 11 is JIS Z.
The value based on the standard of 8721 is preferably N6 or less. This is because those having such brightness are excellent in radiant heat amount and concealing property. Further, the ceramic heater constituted by such a ceramic substrate enables accurate surface temperature measurement by a thermoviewer.

Here, the lightness N is such that the ideal lightness of black is 0, the ideal lightness of white is 10, and the brightness of the color is between the lightness of black and the lightness of white. Each color is divided into 10 so that the perception of is equal to each other, and is displayed by symbols N0 to N10. And the actual measurement is N0-N
The color chart corresponding to 10 is compared. In this case, the first decimal place is 0 or 5.

Ceramic substrate 1 having such characteristics
No. 1 is obtained by incorporating 100 to 5000 ppm of carbon in the substrate. Carbon includes amorphous ones and crystalline ones. Amorphous carbon can suppress a decrease in volume resistivity of a substrate at a high temperature,
Since crystalline carbon can suppress a decrease in the thermal conductivity of the substrate at high temperatures, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

Amorphous carbon is, for example, C, H or O.
It can be obtained by calcining a hydrocarbon consisting only of saccharides, preferably sugar, in air, and graphite powder or the like can be used as the crystalline carbon.
Carbon can be obtained by thermally decomposing an acrylic resin in an inert atmosphere and then applying heat and pressure. By changing the acid value of this acrylic resin, crystalline (non-crystalline) properties can be obtained. The degree of can be adjusted.

The pattern of the resistance heating element 12 is shown in FIG.
In addition to the concentric circular shape and the curved linear shape shown in the above, a spiral shape, an eccentric circular shape, a shape in which these are combined, and the like can be mentioned. The resistance heating element 12 preferably has a thickness of 1 to 50 μm and a width of 5 to 20 μm.
μm is desirable.

The resistance value can be changed by changing the thickness or width of the resistance heating element 12, but this range is the most practical. The resistance value of the resistance heating element 12 increases as the thickness thereof decreases and the width thereof decreases.

The resistance heating element 12 has a rectangular cross section, an elliptical cross section,
It may have a spindle shape or a kamaboko shape, but it is preferably flat. This is because the flat surface is more likely to radiate heat toward the heating surface 11a, so that the amount of heat transfer to the heating surface 11a can be increased and the temperature distribution on the heating surface 11a is less likely to occur. The resistance heating element 12 may have a spiral shape.

In the hot plate unit 100,
The number of circuits including the resistance heating element 12 is not particularly limited as long as it is 1 or more, but it is desirable that a plurality of circuits be formed in order to uniformly heat the heating surface 11a.

When the resistance heating element 12 is formed inside the ceramic substrate 11, the formation position thereof is not particularly limited, but the thickness of the resistance heating element 12 from the bottom surface 11b of the ceramic substrate 11 is 6 mm.
It is preferable that at least one layer is formed at a position of up to 0%. Diffuses while heat propagates to the heating surface 11a,
This is because the temperature on the heating surface 11a tends to be uniform.

The resistance heating element 1 is provided inside the ceramic substrate 11.
When forming 2, the conductor paste made of metal or conductive ceramic is preferably used. That is, when the resistance heating element 12 is formed inside the ceramic substrate 11,
After the conductor paste layer is formed on the green sheet, the green sheets are laminated and fired to produce the resistance heating element 12 inside.

The conductor paste is not particularly limited, but it is preferable that the conductor paste contains metal particles or a conductive ceramic in order to secure conductivity, and contains a resin, a solvent, a thickener and the like.

As the metal particles, for example, noble metals (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel and the like are preferable. These may be used alone or in combination of two or more. This is because these metals are relatively difficult to oxidize and have a resistance value sufficient to generate heat.

As the above-mentioned conductive ceramic, for example,
Examples thereof include tungsten and molybdenum carbides.
These may be used alone or in combination of two or more. The particle size of these metal particles or conductive ceramic particles is preferably 0.1 to 100 μm. This is because if it is less than 0.1 μm and too fine, it is easily oxidized, while if it exceeds 100 μm, it becomes difficult to sinter and the resistance value increases.

Even if the shape of the metal particles is spherical,
It may be flaky. When these metal particles are used, they may be a mixture of the above-mentioned spherical material and the above-mentioned scaly material. When the metal particles are scaly particles or a mixture of spherical particles and scaly particles, it becomes easier to hold the metal oxide between the metal particles, and the resistance heating element 12 and the ceramic substrate 1
This is advantageous because it is possible to secure the adhesion to 1 and to increase the resistance value.

The resin used for the conductor paste is
For example, epoxy resin, phenol resin, etc. may be mentioned. Examples of the solvent include isopropyl alcohol and the like. Examples of the thickener include cellulose and the like.

The ceramic heater 10 according to the present invention has one
It is desirable to use at a temperature of 00 ° C or higher, and more desirably to use at a temperature of 200 ° C or higher.

In the present invention, the conductive wire 25 connected to the external terminal 13 through the socket 22 is covered with a heat resistant insulating member in order to prevent a short circuit or the like with another conductive wire. Is desirable. Such insulating members include aluminum nitride and other oxide ceramics such as alumina, silica, mullite, and cordierite.
Examples thereof include silicon nitride and silicon carbide.

Further, in the hot plate unit 100 shown in FIG. 6, the ceramic substrate 11 is usually fitted on the upper part of the support container (not shown), but in another embodiment, the substrate is the upper end. It may be placed on the upper surface of the support container having the substrate receiving portion and fixed by a fixing member such as a bolt.

In the present invention, as shown in FIG. 6, a thermocouple can be used as the temperature measuring element 17. This is because the temperature of the resistance heating element 12 can be measured with a thermocouple and the temperature can be controlled by changing the voltage and current amount based on the data.

The size of the joining portion of the lead wire of the thermocouple is preferably equal to or larger than the wire diameter of each lead wire, and 0.5 mm or less. With such a configuration, the heat capacity of the joint portion is reduced, and the temperature is converted into a current value accurately and quickly. Therefore, the temperature controllability is improved and the temperature distribution on the heating surface 11a of the wafer is reduced. Examples of the thermocouple include K-type, R-type, B-type, E-type, J-type, and T-type thermocouples, as described in JIS-C-1602 (1980).

In addition to the thermocouples described above, examples of the temperature measuring means of the ceramic heater 10 according to the present invention include platinum temperature measuring resistors, temperature measuring elements such as thermistors, and optical means such as a thermoviewer. There is also a temperature measuring means using.

When the above-mentioned thermoviewer is used, the temperature of the heating surface 11a of the ceramic substrate 11 can be measured, and the temperature of the surface of an object to be heated such as a silicon wafer can be directly measured. The accuracy of temperature control of the object is improved.

The ceramic substrate forming the bonded body of the present invention is used for manufacturing semiconductors and inspecting semiconductors. Specifically, for example, an electrostatic chuck, a susceptor, a hot plate (ceramic heater). ) And the like.

The above-mentioned ceramic heater is a device in which only the resistance heating element is provided inside the ceramic substrate,
As a result, an object to be processed such as a silicon wafer can be placed on or separated from the surface of the ceramic substrate, and can be heated to a predetermined temperature or washed.

When the conductors formed inside the ceramic heater of the present invention are electrostatic electrodes and conductor circuits,
The ceramic heater functions as an electrostatic chuck. FIG. 7A is a vertical sectional view schematically showing the electrostatic chuck, and FIG. 7B is a sectional view of the electrostatic chuck A shown in FIG.
FIG.

In this electrostatic chuck 70, chuck positive and negative electrode layers 72 and 73 are buried inside a ceramic substrate 71, respectively connected to through holes 790, and a ceramic dielectric film 74 is formed on the electrodes. Also,
A resistance heating element 76 and a through hole 79 are provided inside the ceramic substrate 71 so that the semiconductor wafer 29 can be heated. An RF electrode may be embedded in the ceramic substrate 71, if necessary.

Further, the through holes 790 and 79 are provided with bottomed holes (not shown) for connecting external terminals to the through holes 790 and 79. When this ceramic substrate 71 is arranged in a support container, the external terminal fixing member is provided in the bottomed holes formed in the through holes 790 and 79, as in the case of the ceramic heater shown in FIG. 2 or 4. Is installed and an external terminal having a screw portion or an external terminal having a fixing head portion is inserted to connect the through hole to an external power source.

Further, as shown in (b), the electrostatic chuck 70 is usually formed in a circular shape in plan view, and the semi-arcuate portion 72a shown in FIG.
And a chuck positive electrode electrostatic layer 72 including a comb tooth portion 72b,
Similarly, the chuck negative electrode electrostatic layer 73 including the semi-circular portion 73a and the comb tooth portion 73b is formed by the comb tooth portions 72b and 73b.
Are arranged to face each other. When this electrostatic chuck is used, the positive electrode electrostatic layer 72 of the chuck, the negative electrode electrostatic layer 73 of the chuck, and the resistance heating element 76 are connected to the positive and negative sides of a DC power source, respectively, and a DC voltage is applied. . As a result, the silicon wafer placed on the electrostatic chuck 70 is heated to a predetermined temperature and electrostatically attracted to the ceramic substrate 71. In addition,
This electrostatic chuck does not necessarily have to include the resistance heating element 720.

8 and 9 are horizontal sectional views schematically showing electrostatic electrodes in another electrostatic chuck.
In the electrostatic chuck 80 shown in FIG. 9, a semi-circular chuck positive electrode electrostatic layer 82 and a chuck negative electrode electrostatic layer 83 are formed inside a ceramic substrate 81. In the electrostatic chuck 90 shown in FIG. Chuck positive electrode electrostatic layers 92a and 92b and chuck negative electrode electrostatic layers 93a and 93b, each having a shape obtained by dividing a circle into four, are formed in the inside. Further, the two chuck positive electrode electrostatic layers 92a and 92b and the two chuck negative electrode electrostatic layers 93a and 93b are formed so as to intersect each other. In the case of forming an electrode having a shape in which a circular electrode is divided, the number of divisions is not particularly limited and may be 5 or more, and the shape thereof is not limited to a fan shape.

The electrostatic electrode is made of a noble metal (gold, silver, platinum,
Palladium), lead, tungsten, molybdenum, nickel, or another metal, or tungsten, molybdenum carbide, or another conductive ceramic is preferable. These may be used alone or in combination of two or more.

Next, an example of the method for manufacturing the ceramic heater of the present invention will be described with reference to FIG. Figure 1
0 (a) to (d) are cross-sectional views schematically showing a part of the method for manufacturing a ceramic heater of the present invention.

(1) Green Sheet Manufacturing Step First, aluminum nitride powder is mixed with a binder, a solvent, etc. to prepare a paste, and the green sheet 100 is manufactured using this.

If necessary, a sintering aid such as yttria or a compound containing Na or Ca may be added to the above-mentioned aluminum nitride powder. Further, the binder is preferably at least one selected from acrylic binders, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol.

Further, the solvent is preferably at least one selected from α-terpineol and glycol. The paste obtained by mixing these is molded into a sheet by the doctor blade method to produce a green sheet. The thickness of the green sheet is preferably 0.1 to 5 mm.

(2) Step of Printing Conductor Paste on Green Sheet On the green sheet 100, a conductor paste containing a metal paste or a conductive ceramic for forming the resistance heating element 12 is printed to form the conductor paste layer 120. The conductive paste filling layer 190 for the through hole 19 is formed in the through hole.
To form. These conductive pastes contain metal particles or conductive ceramic particles.

The average particle size of the tungsten particles or molybdenum particles is preferably 0.1 to 5 μm. If the average particle size is less than 0.1 μm or exceeds 5 μm, it is difficult to print the conductor paste. Examples of such a conductor paste include, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; 1.5 to 10 parts by weight of at least one binder selected from acrylic, ethyl cellulose, butyl cellosolve, and polyvinyl alcohol; and Examples thereof include a composition (paste) in which 1.5 to 10 parts by weight of at least one solvent selected from α-terpineol and glycol is mixed.

Further, by punching, the semiconductor wafer 29
A portion 150 serving as a lifter pin through hole into which the lifter pin 16 for supporting the is is formed, and a portion 140 serving as a bottomed hole into which a temperature measuring element such as a thermocouple is embedded.

The through holes and the bottomed holes may be formed by performing a blasting process such as sandblasting after the green sheet laminate is sintered.

(3) Stacking process of green sheet Green sheet 100 on which no conductor paste is printed
Is laminated on the upper side of the green sheet 100 on which the conductor paste is printed, and the green sheet 1 on which the conductor paste is printed
On the lower side of 00, the green sheet 100 on which the conductor paste filling layer 190 for the through holes 19 is formed is laminated (see FIG. 10A). At this time, the green sheet 100 on which the conductor paste is printed is laminated at a position of 60% or less from the bottom surface with respect to the thickness of the laminated green sheets.

(4) Firing Step of Green Sheet Laminated Body The green sheet laminated body is heated and pressed to sinter the green sheet and the conductor paste inside. The heating temperature is preferably 1000 to 2000 ° C., and the heating pressure is preferably 10 to 20 MPa. The heating may be performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen or the like can be used. Moreover, you may heat in a vacuum.

In this way, the lifter pin through hole 15 for inserting the lifter pin 16 for supporting the semiconductor wafer 29, the bottomed hole 14 for embedding a temperature measuring element such as a thermocouple, and the resistance heating element 12 are formed. Through holes 19 and the like for connecting to the external terminals 13 are formed. (Fig. 10 (b)
reference)

(5) Formation of Bottomed Holes for Connecting External Terminals Next, bottomed holes 20 for inserting the external terminals 13 are provided on the bottom surface of the through holes 19. The bottomed hole can be formed by performing a blasting process such as a drilling process or a sandblasting process (see FIG. 10C).
The diameter of the bottomed hole 20 is larger than the diameter of the shaft portion of the external terminal 13.

Then, on the wall surface of the bottomed hole 20, the external terminal 1
A thread groove for installing 3 is formed, and the external terminal fixing member 21 is installed in the bottomed hole 20. Further, a plurality of external terminal fixing members 21 may be installed. It should be noted that the external terminal fixing member 21 is installed so as to be fitted into the screw groove formed in the bottomed hole 20.

Further, a thermocouple (not shown) as a temperature measuring element is attached to the bottomed hole 14 with silver solder, gold solder or the like, and sealed with a heat resistant resin such as polyimide.

For the purpose of improving the corrosion resistance, the ceramic heater having the above structure may be provided with a ceramic cylindrical body. The cylindrical body is bonded to a ceramic substrate by a method of bonding via a ceramic bonding layer or the like, or a method of applying a solution containing a sintering aid to the surfaces to be bonded and bonding the same. You can Further, it is desirable to adjust the size of the cylindrical body so that the through hole 19 formed inside the ceramic substrate fits inside the through hole 19.

(6) Attachment of terminals, etc. Next, the bottomed hole 20 in which the external terminal fixing member 21 is installed
An external terminal 13 having a threaded portion at its tip and having a diameter slightly smaller than the diameter of the bottomed hole 20 is inserted while being screwed in, and the upper end of the external terminal 13 is passed through the external terminal fixing member 21. It is connected to the hole 19 (see FIG. 10 (d)).

Next, the external terminal 13 is connected to the conductive wire 25 connected to the power source through the socket 22. Furthermore,
A ceramic heater made of aluminum nitride can be manufactured by inserting a thermocouple or the like as a temperature measuring element into the formed bottomed hole and sealing with a heat resistant resin or the like.

In this ceramic heater, a semiconductor wafer such as a silicon wafer is placed on the ceramic heater, or the silicon wafer or the like is held by lifter pins or support pins, and then the silicon wafer or the like is heated or cooled. Meanwhile, operations such as washing can be performed.

When manufacturing the above ceramic heater, an electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate. However, in this case, it is necessary to form a through hole for connecting the electrostatic electrode and the external terminal, but it is not necessary to form a through hole for inserting the support pin.

When an electrode is provided inside the ceramic substrate, a conductor paste layer to be an electrostatic electrode may be formed on the surface of the green sheet as in the case of forming a resistance heating element.

The present invention will be described in more detail below.

EXAMPLES Example 1 Manufacturing of Ceramic Heater (See FIGS. 1 to 3) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), yttrium oxide (Y ₂ O
₃ : Yttria, average particle size 0.4 μm) 4 parts by weight, acrylic resin binder 11.5 parts by weight, dispersant 0.5 parts by weight, and a paste prepared by mixing 53 parts by weight of alcohol consisting of 1-butanol and ethanol. The green sheet having a thickness of 0.47 mm was manufactured by using the doctor blade method.

(2) Next, this green sheet is heated to 80 ° C.
After being dried for 5 hours, the portion to be the through hole 15 for inserting the lifter pin for transporting the silicon wafer as shown in FIG. 2, the portion to be the bottomed hole 14, and
The portion to be the through hole 19 was formed by punching.

(3) A conductor obtained by mixing 100 parts by weight of tungsten carbide particles having an average particle size of 1 μm, 3.0 parts by weight of an acrylic binder, 3.5 parts by weight of an α-terpineol solvent and 0.3 part by weight of a dispersant. Paste A was prepared.

Tungsten particles 100 having an average particle size of 3 μm
By weight, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant were mixed to prepare a conductor paste B.

Subsequently, the conductive paste A is printed by a screen printing method on the surface of the green sheet provided with through-hole through holes for connecting the resistance heating element and the external terminals, to form a resistance heating element. The conductor paste layer was printed. The printing pattern was concentric as shown in FIG. Further, the conductor paste B was filled in the portion 190 to be the through hole.

The conductor paste layer 120 which has been subjected to the above processing
37 green sheets on which the conductor paste is not printed are stacked on the green sheet on which is printed, and one green sheet on which a portion to be a through hole is printed is stacked under the green sheet, and the temperature is 130 ° C. and the pressure is 8 MPa. Laminated.

(4) Next, the obtained laminated body was degreased in nitrogen gas at 600 ° C. for 5 hours, and then at 1890 ° C. and 15 MPa.
After heating for 10 hours under the above conditions to sinter, it was cooled to room temperature to obtain an aluminum nitride plate-shaped body having a thickness of 3 mm. This is cut into a 230 mm disc shape, and the thickness is 6 μm inside.
A ceramic substrate 11 having a resistance heating element 12 having a width of 10 mm and a through hole 19 was formed.

(5) A bottomed hole 20 having a diameter of 1 mm and a depth of 1 mm for connecting an external terminal was formed on the bottom surface of the through hole 19 of the ceramic substrate 11 by drilling.
Then, a screw groove for installing the external terminal 13 was formed on the wall surface of the bottomed hole 20, and one external terminal fixing member 21 was attached in the bottomed hole.

(6) Then, an external terminal having a threaded portion at the tip is inserted into the bottomed hole 20 while being screwed in, and the upper end of the external terminal 13 and the through hole 19 are connected. Then, the conductive wire 25 is connected to the external terminal 13 via the socket 22.
Connected.

(7) Then, a thermocouple for temperature control is inserted into the hole 14 having a bottom, silica sol is filled therein, and the mixture is cured at 190 ° C. for 2 hours to be gelled. Ceramic heater 1 with a hole
0 was produced.

(Example 2) Manufacturing of electrostatic chuck (Fig. 7)
9) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size 1.1 μm), Y ₂ O ₃ (average particle size 0.4
μm) 4 parts by weight, 12 parts by weight of acrylic resin binder,
A composition obtained by mixing 0.5 part by weight of a dispersant and 53 parts by weight of an alcohol composed of 1-butanol and ethanol was molded by a doctor blade method to obtain a green sheet having a thickness of 0.47 mm.

(2) Next, this green sheet is heated to 80 ° C.
After being dried for 5 hours, the unprocessed green sheet and the green sheet punched to form through holes for through holes with a diameter of 8 mm for connecting an electrostatic electrode and an external terminal and a diameter of 12 mm And a green sheet provided with through holes for through holes. Also,
By punching, a green sheet having a through hole in a portion corresponding to a bottomed hole for inserting a thermocouple or the like was produced.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm and an acrylic binder of 3.0
By weight, 3.5 parts by weight of the α-terpineol solvent and 0.3 parts by weight of the dispersant were mixed to prepare a conductor paste A. Further, a conductor paste B was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant.

(4) A conductor which becomes a conductor circuit by printing the above-mentioned conductive paste A by a screen printing method on the surface of a green sheet provided with through holes for through holes for connecting the resistance heating element and external terminals. The paste layer was printed.
Further, a conductor paste layer having an electrostatic electrode pattern having the shape shown in FIG. 8 was formed on the green sheet which was not processed.

Further, the green sheet having through holes for through holes for connecting the resistance heating element and the external terminals was filled with the conductor paste B.

Next, the green sheets that had been subjected to the above treatment were laminated. First, on the upper side (heating surface side) of the green sheet on which the conductor paste layer serving as a resistance heating element is printed, 34 green sheets without any processing are laminated, and immediately below (on the bottom side). One green sheet in which a portion to be a through hole was formed was laminated. A green sheet on which a conductor paste layer composed of an electrostatic electrode pattern is printed is laminated on the top of the thus laminated green sheet, and two unprocessed green sheets are further laminated thereon. A laminated body was formed by pressure bonding at 130 ° C. and a pressure of 8 MPa.

(5) Next, the obtained laminated body was degreased in nitrogen gas at 600 ° C. for 5 hours, and then at 1890 ° C. and 15 MPa.
After heating for 3 hours under the above conditions to sinter, it was cooled to room temperature to obtain an aluminum nitride plate-like body having a thickness of 3 mm. This is cut into a disk shape having a diameter of 230 mm, and a resistance heating element 76 having a thickness of 5 μm and a width of 2.4 mm is formed inside, and a thickness of 6 μm.
Chuck positive electrode electrostatic layer 72a, chuck negative electrode electrostatic layer 72
The ceramic substrate 71 having b is used.

(6) Next, a bottomed hole having a diameter of 1 mm and a depth of 1 mm for connecting an external terminal was formed on the bottom surface of the through holes 79 and 790 of the ceramic substrate 71 by drilling. After that, a screw groove for installing an external terminal was formed on the wall surface of the bottomed hole, and two external terminal fixing members were attached in the bottomed hole.

(7) Then, an external terminal having a threaded portion at the tip was inserted into the bottomed hole while being screwed in, and the upper end of the external terminal and the through holes 79 and 790 were connected. Then, the conductive wire was connected to the external terminal through the socket.

(8) Then, a thermocouple for controlling the temperature was inserted into the hole having a bottom, silica sol was filled therein, and the mixture was cured and gelled at 190 ° C. for 2 hours. An electrostatic chuck having a body, a conductor circuit and a through hole was manufactured.

(Embodiment 3) (1) After performing steps (1) to (4) of Embodiment 1, the through hole 19 has a shape as shown in FIG.
A bottomed hole 40 having a depth of 1 mm and a depth of 1 mm was provided, and a groove for installing the external terminal fixing member 41 was provided inside the bottomed hole 40, and the external terminal fixing member 41 was installed at three locations.

(2) Then, the external terminal 33 having the fixing head portion 33a larger than the diameter of the shaft portion at one end thereof is inserted into the bottomed hole 40, and the fixing head portion 33a of the external terminal 33 is inserted. The external terminal 33 was fixed in the through hole 39 by pushing the inside of the external terminal fixing member 41 from the portion where the external terminal fixing member 41 was installed.

(3) Then, a conductive wire was connected to the external terminal 33 via a socket to manufacture a ceramic heater having a resistance heating element and a through hole therein.

(Embodiment 4) (1) After performing the steps (1) to (5) of Embodiment 2, through holes 79 and 790 are provided with bottomed holes having a shape as shown in FIG. External terminal fixing members are installed at three locations inside the bottomed hole. The diameter and depth of the bottomed holes were the same as in Example 3.

(2) After that, an external terminal having a fixing head portion larger than the diameter of the shaft portion at one end thereof is inserted into the bottomed hole, and the fixing head portion of the external terminal is fixed to the external terminal. The external terminal was fixed in the through holes 79 and 790 by the external terminal fixing member by pushing it inward from the portion where the member was installed.

(3) Then, a conductive wire was connected to the external terminal via a socket to manufacture an electrostatic chuck having an electrostatic electrode, a resistance heating element, a conductor circuit and a through hole therein.

(Comparative Example 1) In the step (5) of Example 1,
The bottomed hole 20 is not formed in the through hole 19 and Ni-Au is used.
A ceramic heater was manufactured in the same manner as in Example 1 except that the reflow soldering was performed at 700 ° C. to connect the external terminal made of Kovar and having a T-shaped cross section.

(Comparative Example 2) In the step (6) of Example 2,
Example 2 was the same as Example 2 except that a bottomed hole was not formed in the through hole, a gold braze made of Ni-Au was used, and reflow was performed at 700 ° C. to connect an external terminal made of Kovar and having a T-shaped cross section. Similarly, an electrostatic chuck was manufactured.

(Comparative Example 3) In the step (5) of Example 1,
After forming a bottomed hole having the same diameter as the shaft portion of the external terminal 13 in the through hole 19 and forming a screw groove for installing the external terminal 13 on the wall surface of the bottomed hole, a threaded portion is formed at the tip. A ceramic heater was manufactured in the same manner as in Example 1 except that the external terminal 13 having the above was inserted while being screwed in and the upper end portion of the external terminal 13 was connected to the through hole 19.

The following evaluation tests were conducted on the ceramic heaters of Examples 1 to 4 and Comparative Examples 1 to 3.

(1) Presence or absence of crack generation The ceramic heaters according to the examples and comparative examples were attached to a supporting container, a voltage was applied, and the temperature was raised to 200 ° C.
A heat cycle test was repeated 1000 times in which the heat cycle of cooling to room temperature was repeated, and the presence or absence of cracks in the ceramic substrate and through holes was visually observed.

(2) Observation of the vicinity of external terminals The state near the external terminals formed on the ceramic substrate after the above heat cycle test was observed.

As a result, in the ceramic heaters according to Examples 1 to 4, no cracks were found in all parts of the ceramic substrate, but in the ceramic heater according to Comparative Example 3, through holes and through hole forming portions of the ceramic substrate were formed. Countless cracks were found in the vicinity. This was considered to be caused by the difference in the coefficient of thermal expansion between the external terminal made of metal, the through hole made of ceramic, and the ceramic substrate. Further, in the ceramic heaters according to Examples 1 to 4, there was no change in the state near the external terminals, but in the ceramic heaters according to Comparative Examples 1 and 2, the brazing material connecting the external terminals and the through holes deteriorated, Dropping was observed during the heat cycle test.

[0140]

As described above, the ceramic heater for a semiconductor manufacturing / inspecting device of the present invention can absorb the difference in the coefficient of thermal expansion between the external terminal and the through hole. It is possible to obtain a ceramic heater having high connection reliability without cracks and the like, and it is possible to favorably use the ceramic heater for a long period of time.

[Brief description of drawings]

FIG. 1 is a bottom view schematically showing an example of a ceramic heater of the present invention.

FIG. 2 is a partial cross-sectional view schematically showing an example of the ceramic heater of the present invention.

FIG. 3 is a horizontal sectional view schematically showing external terminals and through holes of the ceramic heater of the present invention.

FIG. 4 is a partial cross-sectional view schematically showing an example of the ceramic heater of the present invention.

FIG. 5 is a horizontal sectional view schematically showing external terminals and through holes of the ceramic heater of the present invention.

FIG. 6 is a cross-sectional view schematically showing a case where the ceramic heater of the present invention is installed in a support container to form a hot plate unit.

FIG. 7A is a sectional view schematically showing an example in which the ceramic heater of the present invention functions as an electrostatic chuck, and FIG. 7B is a horizontal sectional view of FIG.

FIG. 8 is a horizontal sectional view schematically showing another example of the electrostatic electrode embedded in the ceramic substrate.

FIG. 9 is a horizontal sectional view schematically showing still another example of the electrostatic electrode embedded in the ceramic substrate.

10 (a) to 10 (d) are cross-sectional views schematically showing an example of a method for manufacturing a ceramic heater which is an example of the bonded body of the present invention.

[Explanation of symbols]

10, 30 Ceramic heater 11, 71, 81, 91 Ceramic substrate 11a heating surface 11b bottom 12 Resistance heating element 12a end of resistance heating element 13 External terminal 14 Bottomed hole 15 through holes 16 lifter pins 17 Temperature measuring element 19, 39 through hole 20, 40 bottomed holes 21, 41 External terminal fixing member 29 Semiconductor wafer 70, 80, 90 Electrostatic chuck

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05B 3/20 393 H05B 3/74 3/74 H01L 21/30 567 F term (reference) 3K034 AA02 AA08 AA10 AA19 AA34 AA37 BA06 BA14 BA17 BB06 BB14 BC04 BC16 BC29 CA02 CA14 CA17 CA19 CA22 CA27 CA29 CA32 CA39 HA01 HA10 JA01 JA10 3K092 PP20 QA05 QB02 QB18 QB20 QB30 QB31 QC QC QC QC QC QC QC QC QC QC QBQ RF03 RF06 RF11 RF17 RF26 RF27 TT09 TT16 TT30 VV31 VV36 5F046 KA04

Claims (4)

[Claims] 1. A ceramic heater for a semiconductor manufacturing / inspecting apparatus, comprising a ceramic substrate having a resistance heating element provided therein, wherein a through hole having a bottomed hole is provided immediately below an end of the resistance heating element. A hole is formed, an external terminal is inserted into the bottomed hole, and the external terminal is fixed to the bottomed hole by an external terminal fixing member that is also inserted into the bottomed hole. Semiconductor manufacturing
Ceramic heater for inspection equipment. 2. A screw groove is formed in the bottomed hole, an external terminal having a threaded portion is screwed into the bottomed hole, and a wall surface of the bottomed hole is provided between the external terminal. The semiconductor manufacturing according to claim 1, wherein the external terminal is fixed to the bottomed hole by a member for fixing the external terminal, which is formed with a space and is also inserted into the bottomed hole. Ceramic heater for inspection equipment. 3. An external terminal having a fixing head portion larger than a diameter of a shaft portion at one end thereof is inserted into the bottomed hole, and is also composed of a leaf spring also inserted into the bottomed hole. The ceramic heater for a semiconductor manufacturing / inspecting apparatus according to claim 1, wherein the external terminal is fixed to the bottomed hole by the external terminal fixing member. 4. An electrostatic electrode is further formed and functions as an electrostatic chuck provided with a heating means.
3. A ceramic heater for semiconductor manufacturing / inspection equipment according to any one of 3 above.