JP2003157563A5 - - Google Patents

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Publication number
JP2003157563A5
JP2003157563A5 JP2001352538A JP2001352538A JP2003157563A5 JP 2003157563 A5 JP2003157563 A5 JP 2003157563A5 JP 2001352538 A JP2001352538 A JP 2001352538A JP 2001352538 A JP2001352538 A JP 2001352538A JP 2003157563 A5 JP2003157563 A5 JP 2003157563A5
Authority
JP
Japan
Prior art keywords
optical head
active layer
light
indirect transition
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001352538A
Other languages
English (en)
Japanese (ja)
Other versions
JP3835260B2 (ja
JP2003157563A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001352538A priority Critical patent/JP3835260B2/ja
Priority claimed from JP2001352538A external-priority patent/JP3835260B2/ja
Priority to US10/082,314 priority patent/US7496025B2/en
Publication of JP2003157563A publication Critical patent/JP2003157563A/ja
Publication of JP2003157563A5 publication Critical patent/JP2003157563A5/ja
Application granted granted Critical
Publication of JP3835260B2 publication Critical patent/JP3835260B2/ja
Priority to US12/318,923 priority patent/US20090168634A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001352538A 2001-11-19 2001-11-19 光ディスク装置 Expired - Fee Related JP3835260B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001352538A JP3835260B2 (ja) 2001-11-19 2001-11-19 光ディスク装置
US10/082,314 US7496025B2 (en) 2001-11-19 2002-02-26 Optical disc drive apparatus with an indirect semiconductor laser containing an asymmetric quantum well structure
US12/318,923 US20090168634A1 (en) 2001-11-19 2009-01-13 Optical disc drive apparatus with an indirect semiconductor laser containing an asymmetric quantum well structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001352538A JP3835260B2 (ja) 2001-11-19 2001-11-19 光ディスク装置

Publications (3)

Publication Number Publication Date
JP2003157563A JP2003157563A (ja) 2003-05-30
JP2003157563A5 true JP2003157563A5 (enExample) 2005-05-19
JP3835260B2 JP3835260B2 (ja) 2006-10-18

Family

ID=19164697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001352538A Expired - Fee Related JP3835260B2 (ja) 2001-11-19 2001-11-19 光ディスク装置

Country Status (2)

Country Link
US (2) US7496025B2 (enExample)
JP (1) JP3835260B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110061421B (zh) * 2015-07-28 2021-05-18 海信集团有限公司 一种半导体激光器驱动方法及驱动电路
US10056735B1 (en) * 2016-05-23 2018-08-21 X Development Llc Scanning UV light source utilizing semiconductor heterostructures
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
US10804428B2 (en) 2018-11-16 2020-10-13 International Business Machines Corporation High efficiency light emitting diode (LED) with low injection current
JP7240945B2 (ja) * 2019-04-24 2023-03-16 株式会社トプコン 測位装置、測位方法およびプログラム
CN113315487B (zh) * 2021-05-17 2022-04-19 无锡豪帮高科股份有限公司 面向5g通信的高阻带抑制低通滤波器的制备封装工艺

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187986A (en) 1981-05-15 1982-11-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting element
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
EP0458409B1 (en) * 1990-05-23 2002-02-20 Uniphase Opto Holdings, Inc. Radiation-emitting semiconductor device and method of manufacturing same
JP2966612B2 (ja) * 1991-12-26 1999-10-25 シャープ株式会社 情報再生装置
US5365535A (en) * 1992-01-13 1994-11-15 Canon Kabushiki Kaisha Semiconductor laser and beam splitting devices, and optical information recording/reproducing, optical communication, and optomagnetic recording/reproducing apparatuses using semiconductor laser and beam splitting devices
EP0607445B1 (en) * 1992-05-13 1997-09-10 Matsushita Electric Industrial Co., Ltd. Optical disk unit
JPH0668515A (ja) * 1992-08-19 1994-03-11 Olympus Optical Co Ltd 光学的情報記録再生装置
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
JPH06302003A (ja) 1993-04-12 1994-10-28 Rohm Co Ltd 光ピックアップ
US5625729A (en) * 1994-08-12 1997-04-29 Brown; Thomas G. Optoelectronic device for coupling between an external optical wave and a local optical wave for optical modulators and detectors
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
JP2000068610A (ja) 1995-03-31 2000-03-03 Matsushita Electric Ind Co Ltd 半導体レ―ザ装置及びそれを用いた光ディスク装置
GB2301708A (en) 1995-06-03 1996-12-11 Sharp Kk Variable coherence light source
JPH09306009A (ja) 1996-05-14 1997-11-28 Sony Corp 光学ピックアップ及び光ディスク装置
JPH1011781A (ja) 1996-06-19 1998-01-16 Sony Corp 光学ピックアップ及び光ディスク装置
JP4097232B2 (ja) * 1996-09-05 2008-06-11 株式会社リコー 半導体レーザ素子
US6072196A (en) * 1996-09-05 2000-06-06 Ricoh Company, Ltd. semiconductor light emitting devices
JPH1187831A (ja) 1997-09-02 1999-03-30 Sony Corp 半導体発光素子、光ピックアップ装置ならびに光記録および／または再生装置
WO2000016455A1 (en) * 1998-09-10 2000-03-23 Rohm Co., Ltd. Semiconductor luminous element and semiconductor laser
JP2000138411A (ja) 1998-10-29 2000-05-16 Tdk Corp 半導体レーザー装置
JP2000352642A (ja) * 1999-06-10 2000-12-19 Sumitomo Electric Ind Ltd 波長多重通信システム用半導体レーザモジュール
US7291858B2 (en) * 1999-12-24 2007-11-06 Bae Systems Information And Electronic Systems Integration Inc. QWIP with tunable spectral response
US20020024153A1 (en) * 2000-07-14 2002-02-28 Matsushita Electric Industrial Co., Ltd. Light-emitting device and optical intergrated device
US6741538B2 (en) * 2000-12-15 2004-05-25 Matsushita Electric Industrial Co., Ltd. Optical device for recording and reproducing information
US6906352B2 (en) * 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6815736B2 (en) * 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
JP2003273397A (ja) * 2002-03-19 2003-09-26 Fuji Xerox Co Ltd 半導体発光素子、半導体複合素子、及び半導体発光素子の製造方法

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