JP2003152453A - Quartz device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a reference signal or the like that is generated by a quartz oscillator from being attenuated in a wiring layer. SOLUTION: The quartz device comprises a first substrate 1a having a first wiring layer 2a, a quartz oscillator 5 that is fixed to the first substrate 1a while its electrode is connected to the first wiring layer 2a, a second substrate having a second wiring layer 2b, a semiconductor device 6 that is fixed to the second substrate 1b and performs the temperature compensation of the quartz oscillator 5 where the electrode is connected to the second wiring layer 2b, and a jointing material 8 for joining the lower surface of the first substrate 1a to the upper surface of the second substrate 1b. In the quartz device, a coefficient of linear expansion of the first substrate 1a ranges from 14×10<-6> / deg.C to 20×10<-6> / deg.C (40 to 400 deg.C), a coefficient of linear expansion of the second substrate 1b ranges from 2×10<-6> / deg.C to 8×10<-6> / deg.C (40 to 400 deg.C), a specific electric resistance of the first and second wiring layers 2a and 2b is 2.5 μΩ.cm or less, and a modulus of elasticity in the joining material 8 is equal to or less than 4 GPa.

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] [0001] The present invention relates to a computer and the like.
In electronic devices such as information processing devices and mobile phones,
Compensation used as a precision reference source for frequency and frequency
Type crystal device. [0002] 2. Description of the Related Art Information processing apparatuses such as computers and portable telephones.
High-precision time and frequency
Temperature-compensated crystal devices used as reference sources
Generally, electrodes for voltage application are formed on a square plate-shaped quartz substrate.
And a temperature compensation for this crystal unit.
The semiconductor element in the package for storing the crystal unit.
It is formed by tightly housing. [0003] The package for storing the crystal unit is generally
Made of an electrically insulating material such as an aluminum oxide sintered body
To form a space in the center of the upper surface to accommodate the crystal unit
A cavity for accommodating semiconductor elements in the center of the lower surface
And each concave surface
Tungsten and molybdenum derived from
Wiring layer made of metal material such as high melting point metal
Substrate, iron-nickel-cobalt alloy, iron-nickel alloy
Metal materials such as gold, or aluminum oxide sintered bodies
And a lid made of a ceramic material. Then, the electrode of the quartz oscillator is placed in a concave
To the wiring layer exposed on the inner surface of the part and the surrounding substrate surface
By attaching via a fixing material such as an electrically conductive adhesive, water
The crystal oscillator is bonded and fixed in the recess and the wiring layer is electrically connected.
And the semiconductor element is housed in the recess on the bottom surface of the base.
The semiconductor element is bonded and fixed via an adhesive.
Electrically connected to the wiring layer, and then
Bonding means such as bonding the lid to the surface with an adhesive or seam welding
The quartz crystal is attached inside the container consisting of the base and lid.
Accommodates the moving element in an airtight manner and in the recess on the bottom of the base
The sealed semiconductor element is sealed with a lid or sealing resin.
Thus, a crystal device as a product is completed. [0005] It should be noted that a conductive material for attaching a quartz oscillator is required.
Generally, organic resin such as epoxy resin is used as the adhesive.
And conductive powder such as silver powder as the main material
A conductive adhesive is used. The lid is attached to the base by seam welding.
In this case, usually, a frame-like brazing method is
And a metallized layer.
Braze the metal frame and seam weld the lid to the metal frame.
Method is used. Further, an external electric circuit board of the crystal device
Mounting on the external wiring of the wiring layer
Via a conductive connecting material such as solder to the wiring conductor of the circuit board
This is done by connecting the crystal unit via the wiring layer.
Externally connected to an external electrical circuit
Vibrates at a predetermined frequency according to the voltage applied from the circuit
Then, the reference signal is supplied to an external electric circuit. [0008] [0005] However, this
Conventional quartz devices have a linear thermal expansion coefficient of about 1
8 × 10^-6/ ° C, crystal oscillator mounted and fixed
Thermal expansion of a substrate made of a sintered aluminum oxide material
The tension coefficient is about 7 × 10^-6/ ° C, which differs greatly
And the fixing material that fixes the crystal unit to the base is a hard epoxy
It is made of resin and conductive powder and is hard to deform, temperature
Whether the semiconductor device for compensation generates heat during operation
When the crystal device is activated, the temperature compensation semiconductor
The heat generated by the element repeatedly acts on both the substrate and the quartz oscillator
As a result, the difference in linear thermal expansion coefficient between the base
The resulting thermal stress repeatedly acts on the fixing material,
Mechanical breakage and the solidification of the quartz
Is broken, and the function as a crystal device is lost.
Had disadvantages. Therefore, in order to solve the above-mentioned drawbacks, the
Let's approximate the linear thermal expansion coefficient to the linear thermal expansion coefficient of a quartz oscillator.
High thermal stress between the substrate and the crystal unit
Means of preventing the occurrence can be considered. However, the coefficient of linear thermal expansion of the
When the linear thermal expansion coefficient is increased to approximate the vibrator,
About 2.5 × 10^-6/ Low (40-400 ° C)
The linear thermal expansion coefficient between the semiconductor element
The difference becomes very large, and both
Large thermal stress occurs due to the difference in linear thermal expansion coefficient of
Due to thermal stress, hard and brittle semiconductor elements and semiconductor elements
Mechanical destruction of the adhesive that adheres to the substrate
The device does not operate normally and the crystal vibration
Temperature compensation of the rotor is no longer possible,
The problem that reliability is greatly reduced.
You. A conventional quartz device is formed on a substrate.
The wiring layer is made of tungsten, molybdenum, manganese
Made of a high melting point metal material such as
Tens have a specific electric resistance of 5.4μΩcm (20 ℃)
Because of the above, the reference signal and half
When the drive signal of the conductive element is propagated,
The signal is greatly attenuated, and the reference signal and drive signal are
Between the semiconductor circuit and the circuit or crystal oscillator.
Has the disadvantage of not being able to actually propagate
Was. The present invention has been made in view of the above-mentioned drawbacks.
The crystal oscillator and semiconductor element are firmly fixed
Effective temperature compensation of the crystal unit using conductive elements
In both cases, the reference signal of the crystal
Highly reliable crystal device that can be supplied reliably
Is to provide. [0013] According to the present invention, a mounting portion is provided on an upper surface.
And a second portion extending from the mounting portion to the outer surface.
A first base having one wiring layer and a mounting portion of the first base;
Crystal fixed and having an electrode connected to the first wiring layer
A vibrator and a mounting portion on the lower surface, from the mounting portion to the outer surface
A second base having a second wiring layer led out,
The electrode is fixed to the mounting portion of the second base, and the electrode is connected to the second wiring layer.
Semiconductor for temperature compensation of the connected crystal unit
Body element and the lower surface of the first base and the upper surface of the second base are in contact with each other.
A quartz device comprising:
The linear thermal expansion coefficient of one substrate is 14 × 10^-6/ ℃ ～ 20 × 1
0^-6/ ° C (40 to 400 ° C), coefficient of linear thermal expansion of the second substrate
Is 2 × 10^-6/ ℃ ～ 8 × 10^-6/ ° C (40-400
° C), the specific electrical resistance of the first wiring layer and the second wiring layer is 2.5
μΩ · cm or less, and the elastic modulus of the bonding material is 4G
Pa or less. According to the present invention, the crystal oscillator is fixed.
The linear thermal expansion coefficient of one substrate is 14 × 10 ^-6/ ℃ ～ 20 × 1
0^-6/ ° C (40 to 400 ° C) and the linear thermal expansion of the crystal unit.
Tension coefficient (18 × 10^-6/ ° C: 40-400 ° C)
It is assumed that heat acts on the crystal unit and the first substrate
However, no large thermal stress occurs between them,
As a result, the crystal unit is firmly bonded and fixed to the first base.
And ensure stable operation of the crystal unit.
Can be. Further, according to the present invention, temperature compensation of a quartz oscillator is provided.
Thermal expansion of the second substrate to which the semiconductor element performing the
Number 2 × 10^-6/ ℃ ～ 8 × 10^-6/ ° C (40-400
° C) and the coefficient of linear thermal expansion of the semiconductor element (2.5 × 10^-6
/ ° C: 40 to 400 ° C).
Even if heat acts on the element and the second substrate, a large heat
No stress is generated and as a result
2. It is possible to firmly adhere and fix to the substrate.
Semiconductor devices provide long-term temperature compensation for crystal units.
Or accurately. Further, according to the present invention, the first substrate and the second substrate
The modulus of elasticity of the joining material for joining is set to 4 GPa or less.
From the difference in linear thermal expansion coefficient between the first base and the second base
Due to this, even if a large thermal stress occurs between them,
The thermal stress is effective by deforming the joining material moderately.
And the first substrate, the second substrate or the first substrate
Mechanical destruction may occur in the joining material joining the second base.
Can be effectively prevented and the crystal oscillator and
The connection with the semiconductor element is made perfect, which
The long-term reliability of the chair can be improved. Further, according to the present invention, a quartz oscillator and a half
Specific power of the first wiring layer and the second wiring layer to which the conductor element is connected
Low air resistance of 2.5μΩ · cm (20 ℃) or less
As a result, the first and second wiring layers
When a reference signal or a drive signal for a semiconductor element is
There is no significant attenuation of the reference signal or drive signal.
Quasi-signals and drive signals to external electric circuits, crystal oscillators and semiconductors
It is possible to accurately and reliably propagate between the device and
Become. [0018] DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a quartz device of the present invention will be described.
This will be described in detail with reference to the accompanying drawings. FIG. 1 shows the present invention.
FIG. 1 is a cross-sectional view showing one embodiment of the crystal device of FIG.
1a is a first base, 1b is a second base, 2a is a first base.
Wiring layer, 2b is second wiring layer, 3 is lid, 5 is crystal vibration
Reference numeral 6, reference numeral 6 denotes a semiconductor element, and reference numeral 8 denotes a bonding material. A quartz oscillator 5 is provided on the first base 1a,
The semiconductor elements 6 are fixedly housed in the base 1b in an airtight manner.
At the same time, the first base 1a and the second base 1b are connected via a bonding material.
By bonding, the crystal device 7 is formed. The first substrate 1a has a coefficient of linear thermal expansion of 14 ×.
10^-6/ ℃ ～ 20 × 10^-6/ ° C (40-400 ° C)
It is made of glass ceramic sintered body, crystalline glass, etc.
A concave portion A is provided on the upper surface of the
The child 5 is accommodated. The first base 1a has a concave portion A on its upper surface.
A first wiring layer 2a is formed from the surface to the outer surface.
At the portion exposed on the surface of the recess A of the first wiring layer 2a.
The electrodes of the crystal unit 5 are fixed via a fixing material 9 such as a conductive adhesive.
That is adhered and fixed to the outer surface of the first base 1a
Is the wiring conductor of the external electric circuit or the second base 1b to be described later.
It is connected to two wiring layers 2b. The first substrate 1a has a coefficient of linear thermal expansion of 1
4 × 10^-6/ ℃ ～ 20 × 10^-6/ ° C (40-400
° C) and the coefficient of linear thermal expansion of the crystal unit 5 (about 18 × 1
0^-6/ ° C: 40 to 400 ° C).
After the quartz oscillator 5 is fixedly accommodated in the recess A of the base 1a,
Even if heat acts on both, large thermal stress occurs between them
As a result, as a result, the quartz oscillator 5 is
It can be securely and firmly fixed in the recess A. The coefficient of linear thermal expansion is 14 × 10^-6/ ℃ ~
20 × 10^-6/ Substrate 1a at 40 / 400C (40-400C)
Specifically, for example, barium oxide is 5 to 60 weight
% Glass and linear thermal expansion at 40 to 400 ° C
The coefficient is 8 × 10^-6Containing metal oxide particles of
In the glass and / or filler
Zirconium (Zr) compound to ZrO_Two0.1 in conversion
Glass ceramic sintering with a content of ２５25% by weight
The body is preferably used. The glass ceramic sintered body is made of glass
Containing 5-60% by weight of barium oxide by weight
It is important to use This barium oxide-containing glass
Has a low softening point and a relatively high coefficient of linear thermal expansion.
To reduce the amount of glass and increase the thermal expansion of the filler.
High linear thermal expansion coefficient
Is easily obtained. The amount of barium oxide
The range of 5 to 60% by weight is less than 5% by weight.
It is difficult to lower the softening point of glass and glass, and
To produce a glass ceramic sintered body with high thermal expansion.
It is difficult to manufacture, and if it is more than 60% by weight, vitrification is difficult.
Difficult, unstable characteristics and chemical resistance
This is because it is significantly reduced. Especially of barium oxide
The amount is desirably 20 to 40% by weight. Further, lead (Pb) is substantially contained in this glass.
Should not be included. Manufactured because lead is toxic
Special equipment and controls to prevent poisoning during the process
Required to produce a sintered body at low cost
It is because it disappears. Lead is inevitably mixed as an impurity
The lead content should be less than 0.05% by weight.
It is desirable to be below. Further, the glass at 40 to 400 ° C.
Linear thermal expansion coefficient is 7 × 10^-6/ ℃ ～ 18 × 10^-6/ ℃, special
8 × 10^-6/ ℃ ～ 13 × 10^-6/ ° C is desirable
New This is because if the coefficient of linear thermal expansion deviates from the above range,
Difference in thermal expansion with the glass ceramic sintered body.
This is because it causes a decrease in the degree. Further, the barium oxide-containing glass is
The yield point is 400-800 ° C, especially 400-700 ° C
Desirably. This is a barium oxide containing glass and
When molding a mixture consisting of
Add a molding binder such as
It is efficiently removed and fired simultaneously with the first substrate 1a.
Of firing conditions with the first wiring layer 2a to be described later
If the yield point is lower than 400 ° C,
Because the lath starts sintering at low temperatures, for example, silver
(Ag), sintering temperature of copper (Cu), etc. is 600 to 80
Simultaneous firing with the first wiring layer 2a at 0 ° C. is not possible, and
Since the densification of the body starts at low temperature, the binder
And the binder components remain and affect the properties.
This is because the result will be blurred. In addition, the yield point is from 800 ° C
If it is high, sintering becomes difficult unless the amount of glass is large,
Cost of sintered body due to large amount of expensive glass required
Will be increased. As a glass satisfying the above-mentioned characteristics,
In addition to barium oxide, at least silicon oxide (Si
O_Two) In a proportion of 25 to 60% by weight, with the balance being oxide oxide.
Udine (B_TwoO_Three), Aluminum oxide (Al_TwoO_Three), Oxidation
Calcium (CaO), magnesium oxide (MgO),
Titanium oxide (TiO_Two), From the group of zinc oxide (ZnO)
It is constituted by at least one selected. On the other hand, a filler combined with the above glass
The component has a linear thermal expansion coefficient at 40 to 400 ° C.
8 × 10^-6Contains at least a metal oxide of / ° C or higher
This is important for increasing the thermal expansion of the sintered body. Linear heat
Expansion coefficient is 8 × 10^-6Do not contain metal oxides of
When the linear thermal expansion coefficient of the glass ceramic sintered body is 14 ×
10^-6/ ° C or higher. The coefficient of linear thermal expansion is 8 × 10^-6/ ℃
As the above metal oxide, cristobalite (SiO
_Two), Quartz (SiO_Two), Tridymite (Si
O_Two), Forsterite (2MgO.SiO)_Two), Wow
Last Night (CaO ・ SiO_Two), Monty Seranay
(CaO ・ MgO ・ SiO_Two), Nepheline (Na_TwoO
・ Al_TwoO_Three・ SiO_Two), Melvinite (3CaO · M)
gO ・ 2SiO_Two), Akermite (2CaO.MgO)
・ 2SiO_Two), Magnesia (MgO), Carnegie
G (Na_TwoO ・ Al_TwoO_Three・ 2SiO_Two), Enstatite
(MgO ・ SiO_Two), Petalite (LiAlSi)
_FourO_Ten), Jade (Na_TwoO ・ Al_TwoO_Three・ 4SiO_Two)of
At least one or more selected from the group are included. this
Among them, cristobalite, quartz, trijimai
SiO such as_TwoMaterial, forsterite, enstater
Type selected from the group of
New The glass and the filler are used at different firing temperatures and final temperatures.
Expansion characteristics of glass ceramic sintered body
Are mixed in an appropriate ratio according to the purpose of the above. The oxidation burr
The glass containing glass has a shrinkage onset temperature without filler.
Below 700 ° C, above 850 ° C, it melts,
One wiring layer 2a and the like cannot be provided. However,
Of crystals during the sintering process by mixing
Liquid phase for liquid phase sintering of filler components
Can be formed at an appropriate temperature. Also, moldings
Since the overall shrinkage starting temperature can be increased,
Of the first wiring layer 2a by adjusting the filler content of
Time firing conditions can be matched. The ratio of the glass to the filler is as follows:
20-80% by volume of powder and 80-20% of filler powder
It is preferable to set the ratio to volume%. With this glass
The amount of the filler component within the above range is the amount of the glass component
Is less than 20% by volume, in other words,
If it is more than the volume%, it is difficult to perform liquid phase sintering, and the sintering temperature
Is increased, and the first wiring layer is simultaneously baked with the first wiring layer 2a.
The layer 2a may be melted. If the glass is 80
More than 20% by volume, in other words 20% by volume of filler
If the amount is too small, the properties of the sintered
This makes it difficult to control material properties and
Simultaneous firing with the first wiring layer 2a because the starting temperature is low
Is difficult. More glass
As a result, the cost of raw materials tends to increase. The amount of the filler component is the same as that of barium oxide.
It is desirable to appropriately adjust the amount according to the yield point.
That is, when the yield point of glass is as low as 400 to 700 ° C.
In this case, the content of filler is 4
It can be blended in a relatively large amount of 0 to 80% by volume. In contrast
When the yield point of glass is as high as 700 to 800 ° C,
Filler content is 20 to 50 volumes due to reduced binding
% Is relatively small. Further, the glass ceramic sintered body is
Zirconi in the filler component and / or the glass component
Compound (Zr compound) is converted to zirconium oxide (ZrO
_Two) Incorporation in a ratio of 0.1 to 25% by weight
That is important. The Zr compound contains barium oxide
Melts into glass and acts to increase the oxidation resistance of the glass.
As a result, the chemical resistance of the glass ceramic
Acidic solution or alkaline solution
Appearance of glass ceramic sintered body after treatment with potash solution
Of the first wiring layer 2a.
It becomes possible. As the Zr compound, for example, ZrO
_Two, ZrSiO_Four, CaO / ZrO_Two, ZrB_Two, ZrP_Two
O₇And at least one selected from the group of ZrB.
It is. This Zr compound is used as a compound powder as a filler component.
Mix as one of the ingredients. In this case, Zr conversion at the time of addition
Compound, especially ZrO_TwoDepending on the BET specific surface area of
The chemical resistance of the ceramic sintered body tends to change.
ET specific surface area is 25m ^Two/ G or more
And BET specific surface area is 25m^TwoLess than / g
The effect of improving the quality tends to be small. Also other formulations
As a form, barium oxide (Ba) is used as glass powder.
O), silicon oxide (SiO_TwoGill oxide as an ingredient other than)
Conium (ZrO_Two) May be used.
No. The above-mentioned Zr compound was adjusted to the above range.
Is less than 0.1% by weight, the effect of improving chemical resistance
Low, if more than 25% by weight, the coefficient of linear thermal expansion is 14 × 1
0^-6/ ° C. In particular, Zr compounds
ZrO_Two0.2 to 10% by weight in conversion is desirable. In addition, chromium oxide,
Select from the group of cobalt oxide, manganese oxide, nickel oxide
At least one of them may be blended. The glass ceramic sintered body is as described above.
In a mixture of glass powder and filler powder prepared in
After adding the appropriate molded organic resin binder,
-By molding means such as blade method, rolling method, mold pressing method, etc.
Reformed into any shape, for example, into a sheet, and then
It is manufactured by firing at a temperature of about 800 ° C. The first base 1a is located on the surface of the recess A.
The first wiring layer 2a extends from the first wiring layer 2a to the outer surface.
A crystal oscillator is provided at a portion of the one wiring layer 2a exposed on the surface of the concave portion A
5 electrodes are bonded and fixed via a fixing material 9 such as a conductive adhesive.
The part led out to the outer surface is the layout of the external electric circuit board.
Connected to a line conductor or a second wiring layer 2b of a second base 1b to be described later
Is done. The first wiring layer 2a is formed simultaneously with the first base 1a.
It is formed by firing, and the firing temperature of the first substrate 1a is about 8
Specific electric resistance is 2.5μΩ ・ cm because it is as low as 00 ℃
(20 ° C) or lower copper, gold and silver can be used.
If it is made of copper, an appropriate organic solvent
Paste obtained by adding and mixing agents, organic binders, etc.
On the surface of the green sheet serving as the first base 1a.
Printing and applying in a predetermined pattern
Therefore, a predetermined pattern is formed at a predetermined position on the first base 1a.
It is. The first wiring layer 2a has a specific electric resistance.
Limit to a low value of 2.5μΩ · cm (20 ℃) or less
Therefore, the reference signal of the crystal unit 5 is applied to the first wiring layer 2a.
Signal or a drive signal of the semiconductor element 6 described later.
In this case, there is no significant attenuation of the reference signal or drive signal.
In addition, the reference signal and the drive signal are transferred to an external electric circuit or a crystal oscillator 5.
Between the semiconductor device 6 and the semiconductor device 6 accurately and reliably.
It becomes possible. The first wiring layer 2a is exposed.
Corrosion of nickel, copper, gold, etc.
Covered with a plating layer (not shown)
In this case, oxidative corrosion of the first wiring layer 2a is favorably prevented.
And solder to the first wiring layer 2a.
Good wettability of the brazing material
Connection of the first wiring layer 2a to the wiring conductors of the circuit board.
It can be made easier and more reliable. Follow
The exposed surface of the first wiring layer 2a is nickel-plated.
Metal, copper, gold, etc. plating layer, for example, sequentially deposited thickness
1 µm to 10 µm nickel or nickel alloy plating
Layer, covered with a 0.1 to 3 µm thick gold plating layer
Is preferred. The surface of the first wiring layer 2a is nickel
When coating with a plating layer of metal, copper, gold, etc.
Arithmetic mean roughness (Ra) is 1.5 μm or less, root mean square
When the root roughness (Rms) is 1.8 μm or less, the outermost surface
When the light reflectance of the crystal oscillator becomes 40% or more, the quartz oscillator 5 is moved to the first position.
When bonding to the wiring layer 2a via the fixing material 9, its positioning is determined.
Work becomes easier. Therefore, the first wiring layer 2a
For coating the surface of the product with a plating layer of nickel, copper, gold, etc.
In this case, the arithmetic average roughness (Ra) of the outermost surface is 1.5 μm or less.
Below, the root mean square roughness (Rms) is set to 1.8 μm or less.
It is preferable to keep it. Further, the surface of the first wiring layer 2a is covered.
Arithmetic flat on outermost surface of plating layer made of nickel, copper, gold, etc.
Average roughness (Ra) of 1.5 μm or less, root mean square roughness
To make (Rms) 1.8 μm or less, the first wiring layer 2a
Adding a brightener such as a sulfur compound to a conventionally known watt bath
Of the first wiring layer 2a
A nickel plating layer is applied to the surface, and then cyan
Immersion in an electrolytic gold plating solution
By depositing a gold plating layer on the substrate. Further, a quartz oscillator 5 is provided on the first wiring layer 2a.
Are bonded and fixed via a fixing member 9, and at the same time, the crystal unit 5
Are electrically connected to the first wiring layer 2a. The fixing member 9 is generally made of a conductive material such as silver powder.
Adding conductive powder to thermosetting resin such as epoxy resin
Formed on the first wiring layer 2a.
The conductor 5 is obtained by adding a conductive powder to an uncured thermosetting resin.
Positioning set through the uncured fixing material consisting of
Vibration by heating and curing the thermosetting resin
The vibrator 5 is fixed at a predetermined position in the recess
The electrode of the terminal 5 is electrically connected to the first wiring layer 2a. The crystal unit 5 is bonded via a fixing member 9.
The fixed first base 1a also has a lid 3 on its upper surface.
The first base 1a and the lid 3 are attached to each other.
A quartz oscillator 5 is hermetically housed inside the container 4. The cover 3 is made of an iron-nickel-cobalt composite.
Metal materials such as gold and iron-nickel alloy, aluminum oxide
Made of ceramic material such as
For example, iron-nickel-cobalt alloy ingots
To perform well-known metal processing such as rolling and punching
It is formed. Further, the cover 3 is attached to the first base 1a.
Through a bonding material such as brazing material, glass, organic resin adhesive, etc.
Or by a welding method such as seam welding.
For example, when the lid 3 is attached by seam welding,
Usually, a frame-shaped solder is formed around the recess A on the upper surface of the first base 1a.
The metallization layer 12 for attachment is formed in the same manner as the first wiring layer 2a.
And the brazing metallization layer
12 is brazed with a metal frame 13 via a brazing material such as silver brazing.
After that, a metal lid 3 is attached to the metal frame 13.
Place and seam weld the outer edge of the lid 3.
And done by In this case, the metal frame 13 is
The radius of curvature is 5 to 30 μm at the corner between the top and side surfaces of
When the round shape is formed, a burr is formed on the upper surface side of the metal frame 13.
The lid 3 is not formed on the upper surface of the metal frame 13.
When welding seams, they are both reliable, airtight and strong.
Can be firmly joined. Therefore, the metal frame 1
Reference numeral 3 denotes a corner portion between the upper surface and the side surface having a radius of curvature of 5 to 30.
It is preferable to have a roundness of μm. Further, the metal frame 13 has a lower surface.
Roundness with a radius of curvature of 40-80 μm at the corner between the side and the side
When the metal frame 13 is formed, the metal
When joining to the size layer 12 with a brazing material,
Empty space between the tally layer 12 and the lower corner of the metal frame 13
A gap is formed and a large pool of brazing material in the space
Is formed, and the metallized layer 1 for brazing the metal frame 13 is formed.
2 becomes strong. Therefore, the metal frame 13
Strong contact with the brazing metallization layer 12 via a brazing material
In order to match, the corner between the lower surface and the side surface of the metal frame 13
A radius of curvature of 40 to 80 μm should be formed beforehand.
preferable. The fourth unit in which the crystal unit 5 is fixedly accommodated
A second semiconductor device 6 is fixedly accommodated below the first base 1a.
The base 1b is provided. The second substrate 1b has a linear thermal expansion coefficient of 2 × 1.
0^-6/ ℃ ～ 8 × 10^-6/ C (40-400C), example
For example, 10 to 68 mol% BaO, 9 to 50 mol%
SnO_Two, 13-72 mol% B_TwoO_ThreeConsisting of oxidation
Product sintered body or Si component is SiO_TwoConverted to 25-80
Weight%, Ba component is 15 to 70 weight in terms of BaO
%, B component is B_TwoO_Three1.5-5% by weight in terms of Al
The component is Al_TwoO_Three1 to 30% by weight in terms of Ca component
Contains more than 0% by weight and 30% by weight or less in terms of CaO
And a concave portion B is provided on the lower surface thereof,
A semiconductor for performing temperature compensation of the crystal unit 5 is provided in the concave portion B.
The element 6 is housed. The second substrate 1b is located on the surface of the concave portion B.
The second wiring layer 2b is formed so as to cover
In the portion exposed on the surface of the concave portion B of the second wiring layer 2b,
The electrode of the conductor element 6 is a conductive connection such as a bonding wire.
The part connected via the member 11 and led out to the outer surface is
Arrangement of the first wiring layer 2a of the first base 1a and the external electric circuit board
Connected to wire conductor. The second substrate 1b has a linear thermal expansion coefficient.
2 × 10^-6/ ℃ ～ 8 × 10^-6/ ° C (40-400 ° C)
And the coefficient of linear thermal expansion of the semiconductor element 6 (silicon: about
2.5 × 10^-6/ ° C: 40 to 400 ° C)
Then, the semiconductor element 6 is housed in the recess B of the second base 1b.
And fixed by bonding via the adhesive 10
Even if heat acts, large thermal stress is generated between them
However, as a result, the semiconductor element 6 is placed in the recess B of the second base 1b.
It can be securely and firmly fixed inside. The linear thermal expansion coefficient is 2 × 10^-6/ ℃ ～ 8
× 10^-6/ B (40-400 ° C.)
Physically, 10 to 68 mol% BaO, 9 to 50 mo
1% SnO_Two, 13-72 mol% B_TwoO_ThreeConsisting of
Oxide sintered body or Si component is SiO_Two25 to
80% by weight, the Ba component is 15 to 70 weights in terms of BaO
Amount%, B component is B_TwoO_Three1.5 to 5% by weight in terms of A
l component is Al_TwoO_Three1 to 30% by weight in terms of Ca component
Contains more than 0% by weight and 30% by weight or less in terms of CaO
Of, for example, 10 to 68 mol%
BaO, 9-50 mol% SnO_Two, 13-72mo
1% B_TwoO_ThreeThe oxide sintered body consisting of
BaO, SnO_Two, B_TwoO_ThreeAcrylic on raw material powder such as
Binder and dispersant, plasticizer,
The solvent is added to the slurry to produce a slurry, and the slurry is
-By adopting the blade method and calendar roll method
Green sheet (raw sheet)
Perform the appropriate punching on the green sheet
A plurality of these are laminated and fired at a temperature of about 800 ° C to 1200 ° C.
It is manufactured by forming. It should be noted that the second substrate 1b is
1% BaO, 9-50 mol% SnO_Two, 13-7
2 mol% B_TwoO_ThreeFormed of an oxide sintered body consisting of
In this case, if BaO is less than 10 mol%, the dielectric loss is large.
The electrical signal propagating through the second wiring layer 2b
It causes a delay, and when it exceeds 68 mol%,
The mechanical strength of the two bases 1b is greatly reduced. Follow
The oxide sintered body has an amount of BaO of 1
It is specified in the range of 0 to 68 mol%. The oxide sintered body is made of SnO_TwoIs 9mo
If it is less than 1%, the sinterability is reduced and the mechanical strength is insufficient.
And when it exceeds 50 mol%, the dielectric loss becomes large.
Attenuation or delay in the electric signal propagating through the second wiring layer 2b
Will be invited. Therefore, the oxide sintered body
Constituting SnO_TwoIs specified as 9-50 mol%
You. Further, the oxide sintered body is B_TwoO_ThreeIs 13mo
If it is less than 1%, the sintering temperature becomes high and gold such as copper
It is difficult to fire simultaneously with the second wiring layer 2b made of a metal material.
It becomes difficult, and when it exceeds 72 mol%, chemical resistance decreases.
As a result, the reliability as a crystal device is low
I will. Therefore, the oxide sintered body is composed of B_TwoO_Three
Is specified to be 13 to 72 mol%. The second substrate 1b is formed on the surface of the concave portion B.
A second wiring layer 2b is formed from the second wiring layer 2b to the outer surface.
The portion of the second wiring layer 2b exposed on the surface of the concave portion B is a semiconductor
The electrode of the element 6 is a conductive connecting member such as a bonding wire.
11 and connected to the outer surface,
Wiring of the first wiring layer 2a of the base 1a and the external electric circuit board
Connected to the body. The second wiring layer 2b is formed simultaneously with the second base 1b.
It is formed by firing, and the firing temperature of the second substrate 1b is about 8
Specific electric resistance is 2.5μ because it is as low as 00-1200 ° C
Use copper, gold, or silver as low as Ωcm (20 ° C) or less.
For example, if it is made of copper, it is suitable for copper powder.
Gold obtained by adding and mixing appropriate organic solvents, organic binders, etc.
Metal paste on the surface of the green sheet as the substrate 1
Make sure to print and apply in a predetermined pattern using a clean printing method, etc.
With this, a predetermined pattern is formed at a predetermined position of the second base 1b.
It is formed. The second wiring layer 2b is exposed
Corrosion of nickel, copper, gold, etc.
Covered with a plating layer (not shown)
In this case, oxidative corrosion of the second wiring layer 2b is favorably prevented.
And solder to the second wiring layer 2b.
Good wettability of the brazing material
The connection of the second wiring layer 2b to the wiring conductors of the circuit board, etc.
It can be made easier and more reliable. Follow
The exposed surface of the second wiring layer 2b is nickel-plated.
Metal, copper, gold, etc. plating layer, for example, sequentially deposited thickness
1 µm to 10 µm nickel or nickel alloy plating
Layer and a gold plating layer having a thickness of 0.1 μm to 3 μm
Is preferred. The second base 1b is also provided on the lower surface.
A half for temperature compensation of the quartz oscillator 5 is formed in the concave portion B.
The conductor element 6 is accommodated and fixed, and the semiconductor element 6 is made of water.
The vibration frequency of the crystal oscillator 5 fluctuates with the temperature change
To keep the vibration frequency of the crystal unit 5 constant.
Works. The semiconductor element 6 is made of brazing material, glass,
Provided on the lower surface of the second base 1b via an adhesive 10 such as a resin.
Adhesively fixed to the bottom surface of the
Each electrode of the child 6 is a conductive connecting portion such as a bonding wire.
The second arrangement exposed to the recess B of the second base 1b via the material 11
It is electrically connected to the line layer 2b. The second base 1b is accommodated in the recess B.
The semiconductor element 6 is a sealing resin filled in the recess B.
14 is hermetically sealed. The semiconductor element 6 is sealed with a sealing resin.
The second substrate is not limited to the one performed in step 14,
1b, a cover is attached to the lower surface so as to close the recess B.
And may be performed by: Further, a first housing for fixedly housing the quartz oscillator 5 is described.
A second base 1b for fixedly housing the base 1a and the semiconductor element 6;
Is bonded via a bonding material 8 having an elastic modulus of 4 GPa or less.
I have. The bonding material 8 has an elastic modulus of 4 GPa or less.
The first base 1a and the second base are soft and easily deformed.
1b repeatedly generates heat or the like generated when the semiconductor element 6 operates.
And a semiconductor element 6 is formed on the first base 1a and the second base 1b.
The heat and the like generated at the time of movement repeatedly act, and the first base 1a and the
Large due to the difference in linear thermal expansion coefficient between the two substrates 1b.
Even if repeated thermal stresses occur repeatedly,
It is absorbed by deforming the mixture 8 moderately,
As a result, the first base 1a and the second base 1b
Mechanical destruction of the base 1a, the second base 1b, etc.
And the quartz oscillator 5 housed in the first base 1a and the second base
Electric connection with the semiconductor element 6 housed in the body 1b
Can be kept. The bonding material 8 has an elastic modulus of 4 G
When the pressure exceeds Pa, the first base 1a and the second base are hardly deformed.
Effective absorption of thermal stress generated between the body 1b
Can not be formed, the first base 1a or the second base 1b, or the bonding material
8 causes mechanical destruction and accommodates the crystal unit 5
4 caused a defect such as breaking the airtightness,
All functions are lost. Therefore, the bonding material 8
Its elastic modulus is specified to be 4 GPa or less. The bonding material 8 having the elastic modulus of 4 GPa or less
Rubber particles such as acrylic rubber and isoprene rubber.
The epoxy resin added is preferably used, and the epoxy resin
As the resin, (ortho) cresol novolak type,
Phenol novolak type, naphthalene aralkyl type,
Epoxy resin such as polysulfide modified type is preferably used
Is done. In this case, the rubber particles are added to the epoxy resin.
The elastic modulus of the bonding material 8 is reduced by increasing the addition amount.
The state of the epoxy resin (structure, degree of crosslinking,
Rubber particles depending on the degree of polymerization, type of curing agent, etc.)
By controlling the amount, the elastic modulus of the bonding material 8 is set to 4 GPa or less.
Can be below. Also 3 rubber particles to epoxy resin
If the added amount of the wire exceeds 50% by weight, the shape retention property of the bonding material 8
Greatly decreases, and the first base 1a and the second base 1b
Tends to be difficult to join. Therefore, the epo
When rubber particles are added to the xy resin, the amount added is
50 weights within the range where the elastic modulus of the bonding material 8 is 4 GPa or less.
It is preferable to set the amount to not more than%. The bonding material 8 has an elastic modulus of 1 GP.
If it is less than a, the first base 1
a and the second base 1b are difficult to securely and firmly join
It tends to be. Accordingly, the bonding material 8 has an elastic modulus
In the range of 4 GPa or less and 1 GPa or more
Is preferred. The first base 1 a and the second base 1
For bonding with the body 1b, rubber particles are added to the uncured epoxy resin.
The first base 1a and the second base 1a are connected via the added uncured joining material.
Position and set the body 1b and remove the uncured epoxy resin
It can be performed by heat curing. The bonding material having an elastic modulus of 4 GPa or less
8 is not limited to the epoxy resin composition described above,
Filler such as silica to thermosetting resin with low elastic modulus such as resin
It may be formed by a resin composition to which components are added. Thus, according to the crystal device 7 described above,
Connecting the first wiring layer 2a and the second wiring layer 2b to an external electric circuit
And applying a predetermined voltage to the electrodes of the crystal unit 5.
As a result, the crystal unit 5 vibrates at a predetermined frequency.
Then, the temperature compensation of the crystal unit 5 is performed by the semiconductor element 6.
Information processing devices such as computers and mobile phones
A high-precision time and frequency reference
Used. The present invention is limited to the above embodiment.
Not within the scope of the present invention.
Various modifications are possible, for example, as shown in FIG.
If the projections 15 are formed in a part of the first wiring layer 2a,
Of the first wiring layer 2a and the quartz
A certain space is secured between the vibrator 5 and this space.
When the sufficient fixing material 9 enters the base, the quartz oscillator 5
It can be very firmly bonded and fixed to the wiring layer 2a. In the above-described quartz crystal device 7, the first base 1
a, a concave portion A is provided on the upper surface, and the crystal unit 5 is accommodated in the concave portion A.
However, as shown in FIG.
The quartz oscillator 5 is mounted and fixed on the first base 1a.
The sealed crystal unit 5 is hermetically sealed with a bowl-shaped lid 3.
The present invention can also be applied to the crystal device 7 which has been modified. [0077] According to the present invention, the crystal oscillator is fixed.
The linear thermal expansion coefficient of the first substrate is 14 × 10 ^-6/ ℃ ～ 20 ×
10^-6/ ° C (40 to 400 ° C) and the linear heat of the crystal unit
Expansion coefficient (18 × 10^-6/ ° C: 40-400 ° C)
The heat applied to the crystal unit and the first substrate
However, no large thermal stress is generated between the two.
As a result, the crystal unit is firmly adhered and fixed to the first base.
And stable operation of the crystal unit
be able to. Further, according to the present invention, the temperature compensation of the crystal unit
Thermal expansion of the second substrate to which the semiconductor element performing the
Number 2 × 10^-6/ ℃ ～ 8 × 10^-6/ ° C (40-400
° C) and the coefficient of linear thermal expansion of the semiconductor element (2.5 × 10^-6
/ ° C: 40 to 400 ° C).
Even if heat acts on the element and the second substrate, a large heat
No stress is generated and as a result
2. It is possible to firmly adhere and fix to the substrate.
Semiconductor devices provide long-term temperature compensation for crystal units.
Or accurately. Further, according to the present invention, the first substrate and the second substrate
The modulus of elasticity of the joining material for joining is set to 4 GPa or less.
From the difference in linear thermal expansion coefficient between the first base and the second base
Due to this, even if a large thermal stress occurs between them,
The thermal stress is effective by deforming the joining material moderately.
And the first substrate, the second substrate or the first substrate
Mechanical destruction may occur in the joining material joining the second base.
Can be effectively prevented and the crystal oscillator and
The connection with the semiconductor element is made perfect, which
The long-term reliability of the chair can be improved. Further, according to the present invention, a quartz oscillator and a half
Specific power of the first wiring layer and the second wiring layer to which the conductor element is connected
Low air resistance of 2.5μΩ · cm (20 ℃) or less
As a result, the first and second wiring layers
When a reference signal or a drive signal for a semiconductor element is propagated,
There is no significant attenuation of the reference signal or drive signal,
Reference signal and drive signal are semiconductive with external electric circuit and crystal oscillator
Accurate and reliable propagation between body elements
It becomes.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing one embodiment of a crystal device of the present invention. FIG. 2 is a sectional view of a main part showing another embodiment of the crystal device of the present invention. FIG. 3 is a sectional view showing another embodiment of the crystal device of the present invention. [Description of Signs] 1a... First base 1b... Second base A... Depression B... Depression 2a... First wiring layer 2b ... Second wiring layer 3 Lid 4 Container 5 Crystal resonator 6 Semiconductor element 7 ··· Crystal device 8 ····· Joining material 9 ····························································· Layer 13 Metal frame 14 Sealing resin 15 Projection

Claims (1)

Claims: 1. A first base having a mounting portion on an upper surface and having a first wiring layer extending from the mounting portion to an outer surface, and fixed to a mounting portion of the first base. And the electrode is the first
A crystal resonator connected to the wiring layer, and a second portion having a mounting portion on the lower surface and extending from the mounting portion to the outer surface.
A second substrate having a wiring layer, a semiconductor element fixed to a mounting portion of the second substrate, and performing temperature compensation of the crystal resonator having electrodes connected to the second wiring layer; and a lower surface of the first substrate And a bonding material for bonding the upper surface of the second substrate to the first substrate, wherein the first substrate has a linear thermal expansion coefficient of 14 × 10 ⁻⁶ / ° C. to 2 ° C.
0 × 10 ⁻⁶ / ° C. (40 to 400 ° C.), and the linear thermal expansion coefficient of the second substrate is 2 × 10 ⁻⁶ / ° C. to 8 × 10 ⁻⁶ / ° C. (40 to 4 ° C.).
(00 ° C.), a specific electrical resistance of the first wiring layer and the second wiring layer is 2.5 μΩ · cm or less, and a modulus of elasticity of the bonding material is 4 GPa or less.