JP2003069364A - Crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To overcome problems of a conventional crystal device wherein a cover cannot be strongly joined with a substrate due to the difference of a linear thermal expansion coefficient between the substrate and the cove and cracks are produced on the substrate by a thermal shock when the cover is fitted onto the substrate. SOLUTION: The crystal device 7 of this invention comprises a substrate 1 having a wiring layer 2, a metallic frame 9, a crystal vibrator 5, and a cover 3. The linear thermal expansion coefficient of the substrate 1 is selected to be 14×10<-6> to 20×10<-6> / deg.C (40 to 400 deg.C), the rigidity of the cover 3 is selected to be 50 GPa or less. A first nickel plating layer 8a containing 9 to 12 wt.% phosphorous is coated on a region of the metallic frame 9 to which at least the cover 3 is welded, and a second nickel plating layer 8b containing 5 to 40 wt.% cobalt is coated on a region of the wiring layer 2 which is connected at least with a external electric circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] [0001] The present invention relates to a computer and the like.
In electronic devices such as information processing devices and mobile phones,
Crystal devices used as frequency and frequency reference sources.
Is what you do. [0002] 2. Description of the Related Art Information processing apparatuses such as computers and portable telephones.
Used as a reference source for time and frequency in electronic devices such as talk
Quartz crystal devices used in general are generally
A quartz crystal resonator formed by forming electrodes for voltage application on a substrate,
To be hermetically sealed in a crystal oscillator package
Therefore, it is formed. [0003] The package for storing the crystal unit is generally
Made of an electrically insulating material such as an aluminum oxide sintered body
To form a space in the center of the upper surface to accommodate the crystal unit
For the recess, and led out from the recess surface to the outer surface
Metals such as refractory metals such as tungsten and molybdenum
A base having a wiring layer made of a material;
Lid made of metal material such as Baltic alloy and iron-nickel alloy
It is composed of the body. Then, the electrode of the quartz oscillator is placed in the concave portion of the base.
Conductive on the exposed wiring layer and the surrounding substrate surface
By attaching via an adhesive, the crystal unit
Inside and electrically connected to the wiring layer.
After that, the lid is attached to the upper surface of the base, and the base and the lid are
Airtightly holding the crystal unit inside a container consisting of
As a result, a crystal device as a product is completed. [0005] The attachment of the lid to the base is generally carried out.
Then, the brazing hole is surrounded on the upper surface of the base so as to surround the recess.
A metallized layer is formed and the brazing metal
Iron-nickel-cobalt alloy or iron-nickel in the rise layer
Take a metal frame made of an alloy or the like through a brazing material such as silver brazing.
Cover, and cover the metal frame with a lid made of a metal material by seam welding.
Welding, electron beam welding, etc.
It is done by such means. In this case, the surface of the metal frame
Usually, a nickel plating layer is previously
Bath, electrolytic plating using a sulfamic acid bath, etc.
Welding by seam welding etc.
Qualitatively, the nickel plating layer is heated and melted by a welding device,
By connecting the lid to the metal frame via
It has been done. Further, an external electric circuit board of the crystal device
Mounting on the external wiring of the wiring layer
Low melting point brazing material such as tin-lead solder is used for the wiring conductor of the circuit board.
This is done by connecting
While being electrically connected to an external electric circuit through the wire layer,
Predetermined frequency according to voltage applied from external electric circuit
Vibrates with. The exposed surface of the wiring layer has a metal frame
The nickel plating layer is applied by the same means as
Good wettability of low melting point brazing material to wire conductor
You. [0007] SUMMARY OF THE INVENTION However, the conventional
The crystal device has a linear thermal expansion coefficient of about 18 ×
10^-6/ ° C (40 to 400 ° C)
It consists of an aluminum oxide sintered body on which the rotor is mounted and fixed.
The substrate has a linear thermal expansion coefficient of about 7 × 10^-6/ ° C (40-40
0 ° C), which is very different.
The conductive adhesive for fixing the hard epoxy resin and the conductive
Since it is made of powder and difficult to deform, etc.
Heat is repeatedly applied to both the substrate and the crystal unit
This is due to the difference in linear thermal expansion coefficient between the substrate and the crystal unit.
Thermal stress repeatedly acts on the conductive adhesive, and the conductive adhesive
Mechanically destroyed the conductive adhesive of the crystal unit.
Through, and as a result, the crystal device
There was a problem that the function was lost. [0008] In order to solve the above-mentioned problem,
Let's approximate the linear thermal expansion coefficient to the linear thermal expansion coefficient of a quartz oscillator.
High thermal stress between the substrate and the crystal unit
Means of preventing the occurrence can be considered. However, the coefficient of linear thermal expansion of the
When raised to approximate the vibrator, iron-nickel-
Linear heat of lid made of cobalt alloy, iron-nickel alloy, etc.
Expansion coefficient is about 4 × 10^-6/ ℃ ～ 6 × 10^-6/ ° C (40 ~
400 ° C.), which is large relative to the coefficient of linear thermal expansion with the substrate.
The difference (about 10 × 10^-6/ ° C or higher), iron-d
Lid made of nickel-cobalt alloy, iron-nickel alloy, etc.
The rigidity of the body is as high as about 80-100 GPa and it is difficult to deform
Because of this, the base and lid may
When the returning heat acts, the linear thermal expansion between the base and the lid is caused.
A large thermal stress occurs due to the
Cracks and cracks may occur in the substrate due to stress,
The hermetic seal of the container consisting of
As a result, the crystal vibrating housed inside the container consisting of the base and the lid
To operate the child accurately and stably for a long time.
The problem of being unable to do so is induced. [0010] Further, the conventional crystal device is provided with a metal frame.
Nickel plating layer applied by electrolytic plating method
Has a melting point of about 1000 ° C. or higher.
When welding the lid to the metal frame by melting the plating layer,
Large thermal shock of high temperature exceeding 1000 ° C is transmitted to the substrate
Cracks on the substrate
The hermetic seal of the container consisting of
Accurate and stable operation for a long time
Had no problem. In addition, with the miniaturization of crystal devices, wiring
Since the area of the layer is becoming very small,
Strongly applied to the wiring conductor of the external electric circuit board via low melting point brazing material
There is a problem that it is becoming difficult to firmly connect
Was. The present invention has been made in view of the above problems.
The purpose is to make the crystal
Can be operated stably, and the external electric
High reliability that can be securely and firmly connected to the circuit
It is to provide a crystal device. [0013] SUMMARY OF THE INVENTION A quartz device of the present invention
Has a mounting portion on the upper surface and extends from the mounting portion to the outer surface.
A base having a wiring layer connected to the derived external electric circuit
And a body attached to the upper surface of the base and surrounding the mounting portion.
And a metal frame fixed to the mounting portion of the base, and
A crystal resonator electrically connected to the wiring layer;
Welded on a metal frame to seal the quartz oscillator inside
A quartz device comprising a lid to be housed,
The coefficient of linear thermal expansion of the body is 14 × 10^-6/ ℃ ～ 20 × 10^-6
/ ° C (40 to 400 ° C) and the rigidity of the lid is 50 G
Pa or less, and at least the lid of the metal frame is
The first containing 9 to 12% by weight of phosphorus in the region to be welded
The nickel plating layer is connected to at least the external electric
5 to 40% by weight of cobalt in the area connected to the circuit
A second nickel plating layer having
Is what you do. According to the quartz crystal device of the present invention, the line of the substrate
14 × 10 thermal expansion coefficient^-6/ ℃ ～ 20 × 10^-6/ ℃
(40-400 ° C) and the linear thermal expansion coefficient of the crystal unit.
After fixing the crystal unit to the base
Repeated for both the base and the quartz oscillator due to changes in the head environment
Even if heat is applied, there will be no
Thermal stress due to difference in linear thermal expansion coefficient
This ensures that the crystal unit is securely and strongly attached to the substrate.
It can be fixed firmly, and the quartz crystal
It becomes possible. At the same time, according to the quartz crystal device of the present invention,
If the rigidity of the lid is 50 GPa or less,
There is a difference in linear thermal expansion coefficient between the body and the lid, and heat is applied to both.
Even if a large thermal stress occurs between them.
Thermal stress is effective by deforming the lid moderately
As a result, the lid is securely and firmly attached to the base
To complete the hermetic sealing of the container,
The crystal oscillator housed inside is stable for a long time, and
It can be operated accurately. Further, according to the crystal device of the present invention, gold
Apply phosphorus to at least the area of the genus frame where the lid is welded.
The first nickel with a melting point of about 850 ° C containing
Since the Kel plating layer was applied,
When the lid layer is welded to the metal frame by melting the
It is unlikely that a large thermal shock will be transmitted to the body and cause cracks.
As a result, the air in the container consisting of the base and the lid
Completely seal tightly and lengthen the crystal oscillator housed inside the container.
Accurate and stable operation over time
Become. Further, according to the quartz crystal device of the present invention,
For example, if the area of the wiring layer connected to the external
Having a high reactivity with tin containing 5 to 40% by weight of
Since the nickel plating layer was applied, the area of the wiring layer
And the wiring layer and the wiring conductor of the external electric circuit board
Even if the connection area of the
There must be sufficient tin-ditin between the nickel plating layer and the low melting point brazing material.
Forming an alloy layer such as nickel-cobalt
Connection to an external electrical circuit board.
Reliability can be improved. [0018] DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a quartz device of the present invention will be described.
This will be described in detail with reference to the accompanying drawings. FIG. 1 shows the present invention.
FIG. 1 is a cross-sectional view showing one embodiment of the crystal device of FIG.
Here, 1 is a base, 2 is a wiring layer, and 3 is a lid. this
Quartz vibration in a container 4 formed by the base 1 and the lid 3
The crystal device 6 is formed by housing the element 5 in an airtight manner.
Is done. The substrate 1 has a linear thermal expansion coefficient of 14 × 10
^-6/ ℃ ～ 20 × 10^-6/ ° C (40-400 ° C)
Made of sintered ceramics, crystalline glass, etc.
A concave portion 1a serving as an empty space for accommodating the crystal oscillator is formed on the surface.
A quartz oscillator 5 is accommodated in the concave portion 1a.
You. The substrate 1 has a coefficient of linear thermal expansion of 14 × 1.
0^-6/ ℃ ～ 20 × 10^-6/ ° C (40-400 ° C)
The linear thermal expansion coefficient of the crystal unit 5 (about 18 × 10^-6/
° C: 40 to 400 ° C).
After the crystal oscillator 5 is mounted and accommodated in the part 1a, heat is applied to both parts.
Even if it acts, large thermal stress does not occur between them.
As a result, the quartz oscillator 5 is securely placed in the concave portion 1a of the base 1.
In fact, it can be firmly fixed. The coefficient of linear thermal expansion is 14 × 10^-6/ ℃ ～ 2
0x10^-6/ ° C (40 to 400 ° C)
Contains glass containing 5 to 60% by weight of barium oxide
And the coefficient of linear thermal expansion at 40 to 400 ° C. is 8 × 10^-6
/ Filler containing metal oxide particles of at least / ° C,
Zirconium in the glass and / or filler
(Zr) Compound is converted to ZrO_Two0.1 to 25% by weight
Glass ceramic sintered body containing
Used. The glass ceramic sintered body is made of glass
Containing 5-60% by weight of barium oxide by weight
It is important to use This barium oxide-containing glass
Has a low softening point and a relatively high coefficient of linear thermal expansion.
To reduce the amount of glass and increase the thermal expansion of the filler.
High linear thermal expansion coefficient
Is easily obtained. The amount of barium oxide
The range of 5 to 60% by weight is less than 5% by weight.
It is difficult to lower the softening point of glass and glass, and
To produce a glass ceramic sintered body with high thermal expansion.
It is difficult to manufacture, and if it is more than 60% by weight, vitrification is difficult.
Difficult, unstable characteristics and chemical resistance
This is because it is significantly reduced. Especially of barium oxide
The amount is desirably 20 to 40% by weight. Further, lead (Pb) is substantially contained in this glass.
Should not be included. Manufactured because lead is toxic
Special equipment and controls to prevent poisoning during the process
Required to produce a sintered body at low cost
It is because it disappears. Lead is inevitably mixed as an impurity
The lead content should be less than 0.05% by weight.
It is desirable to be below. Further, the glass at 40 to 400 ° C.
Linear thermal expansion coefficient is 7 × 10^-6/ ℃ ～ 18 × 10^-6/ ℃, special
8 × 10^-6/ ℃ ～ 13 × 10^-6/ ° C is desirable
New This is because if the coefficient of linear thermal expansion deviates from the above range,
Linear thermal expansion difference with the glass ceramic sintered body.
This is because it causes a decrease in strength. Further, the barium oxide-containing glass may be
The yield point is 400-800 ° C, especially 400-700 ° C
Desirably. This is a barium oxide containing glass and
When molding a mixture consisting of
Add a molding binder such as
After being efficiently removed and fired simultaneously with the substrate 1
It is necessary to match the firing conditions with the wiring layer 2 described below.
If the yield point is lower than 400 ° C, the glass
In order to start sintering at a temperature, for example, silver (Ag), copper
Wiring layer whose sintering start temperature such as (Cu) is 600 to 800 ° C
2 cannot be fired at the same time, and the compact
The binder can no longer be decomposed and volatilized to start
As the residual components may affect the properties
It is. If the yield point is higher than 800 ° C, the amount of glass increases.
Otherwise, sintering becomes difficult, so large amounts of expensive glass
Need to increase the cost of the sintered body.
You. As a glass satisfying the above characteristics,
In addition to barium oxide, at least silicon oxide (Si
O_Two) In a proportion of 25 to 60% by weight, with the balance being oxide oxide.
Udine (B_TwoO_Three), Aluminum oxide (Al_TwoO_Three), Oxidation
Calcium (CaO), magnesium oxide (MgO),
Titanium oxide (TiO_Two), From the group of zinc oxide (ZnO)
It is constituted by at least one selected. On the other hand, a filler combined with the above glass
The component has a linear thermal expansion coefficient at 40 to 400 ° C.
8 × 10^-6Contains at least a metal oxide of / ° C or higher
This is important for increasing the thermal expansion of the sintered body. Linear heat
Expansion coefficient is 8 × 10^-6Do not contain metal oxides of
When the linear thermal expansion coefficient of the glass ceramic sintered body is 14 ×
10^-6/ ° C or higher. Such a coefficient of linear thermal expansion is 8 × 10^-6/ ℃
As the above metal oxide, cristobalite (SiO
_Two), Quartz (SiO_Two), Tridymite (Si
O_Two), Forsterite (2MgO.SiO)_Two), Wow
Last Night (CaO ・ SiO_Two), Monty Seranay
(CaO ・ MgO ・ SiO_Two), Nepheline (Na_TwoO
・ Al_TwoO_Three・ SiO_Two), Melvinite (3CaO · M)
gO ・ 2SiO_Two), Akermite (2CaO.MgO)
・ 2SiO_Two), Magnesia (MgO), Carnegie
G (Na_TwoO ・ Al_TwoO_Three・ 2SiO_Two), Enstatite
(MgO ・ SiO_Two), Petalite (LiAlSi)
_FourO_Ten), Jade (Na_TwoO ・ Al_TwoO_Three・ 4SiO_Two)of
At least one or more selected from the group are included. this
Among them, cristobalite, quartz, trijimai
SiO such as_TwoMaterial, forsterite, enstater
Type selected from the group of
New The glass and the filler are used at different firing temperatures and final temperatures.
Expansion characteristics of glass ceramic sintered body
Are mixed in an appropriate ratio according to the purpose of the above. The oxidation burr
The glass containing glass has a shrinkage onset temperature without filler.
If the temperature is 700 ° C or lower, it will melt at 850 ° C or higher.
The wire layer 2 and the like cannot be provided. But the filler
Causes crystal precipitation during the firing process.
Appropriate liquid phase for liquid phase sintering of filler components
Can be formed at an appropriate temperature. In addition, the entire molded body
Since the shrinkage initiation temperature can be increased,
Of the co-firing condition with the wiring layer 2 by adjusting the
Matching can be achieved. The ratio between the glass and the filler is the same as that of the glass
20-80% by volume of powder and 80-20% of filler powder
It is preferable to set the ratio to volume%. With this glass
The amount of the filler component within the above range is the amount of the glass component
Is less than 20% by volume, in other words,
If it is more than the volume%, it is difficult to perform liquid phase sintering, and the sintering temperature
And the wiring layer 2 is melted at the same time as the
There is a risk that it will. In addition, glass is more than 80%
In other words, if the filler content is less than 20% by volume,
The properties of the binder greatly depend on the properties of the glass,
It is difficult to control the material characteristics and the sintering start temperature is low.
It is difficult to fire simultaneously with the wiring layer 2
Problems arise. Also, the cost of raw materials is high due to the large amount of glass.
Also tend to be higher. The amount of the filler component is determined by the amount of barium oxide.
It is desirable to appropriately adjust the amount according to the yield point.
That is, when the yield point of glass is as low as 400 to 700 ° C.
In this case, the content of filler is 4
It can be blended in a relatively large amount of 0 to 80% by volume. In contrast
When the yield point of glass is as high as 700 to 800 ° C,
Filler content is 20 to 50 volumes due to reduced binding
% Is relatively small. Further, the glass ceramic sintered body is
Zirconi in the filler component and / or the glass component
Compound (Zr compound) is converted to zirconium oxide (ZrO
_Two) Incorporation in a ratio of 0.1 to 25% by weight
That is important. The Zr compound contains barium oxide
Melts into glass and acts to increase the oxidation resistance of the glass.
As a result, the chemical resistance of the glass ceramic
Acidic solution or alkaline solution
Appearance of glass ceramic sintered body after treatment with potash solution
Change and deterioration of the adhesion strength of the wiring layer 2 can be suppressed.
It works. As the Zr compound, for example, ZrO
_Two, ZrSiO_Four, CaO / ZrO_Two, ZrB_Two, ZrP_Two
O₇And at least one selected from the group of ZrB.
It is. This Zr compound is used as a compound powder as a filler component.
Mix as one of the ingredients. In this case, Zr conversion at the time of addition
Compound, especially ZrO_TwoDepending on the BET specific surface area of
The chemical resistance of the ceramic sintered body tends to change.
ET specific surface area is 25m ^Two/ G or more
And BET specific surface area is 25m^TwoLess than / g
The effect of improving the quality tends to be small. Also other formulations
As a form, barium oxide (Ba) is used as glass powder.
O), silicon oxide (SiO_TwoGill oxide as an ingredient other than)
Conium (ZrO_Two) May be used.
No. The above-mentioned Zr compound was adjusted to the above range.
Is less than 0.1%, the effect of improving chemical resistance is low.
If it exceeds 25% by weight, the coefficient of linear thermal expansion is 14 × 10
^-6/ ° C. In particular, the Zr compound is Z
rO_Two0.2 to 10% by weight in conversion is desirable. In addition, chromium oxide,
Select from the group of cobalt oxide, manganese oxide, nickel oxide
At least one of them may be blended. The glass ceramic sintered body is as described above.
In a mixture of glass powder and filler powder prepared in
After adding the appropriate molded organic resin binder,
-By molding means such as blade method, rolling method, mold pressing method, etc.
Reformed into any shape, for example, into a sheet, and then
It is manufactured by firing. The base 1 is located outside the surface of the recess 1a.
The wiring layer 2 is led out to the surface, and the recess of the wiring layer 2 is formed.
The electrode of the crystal unit 5 is electrically conductive at a portion exposed on the surface of the portion 1a.
Adhesively fixed via the conductive adhesive 7 and led out to the outer surface
The part is made of low-level solder such as tin-lead solder on the wiring conductor of the external electric circuit board.
It is connected via the melting point brazing material. The wiring layer 2 is accommodated in the recess 1a.
Electrical connection between the crystal unit 5 and the wiring conductor of the external electric circuit board
Copper, silver, nickel, palladium
Metal, made of one or more of gold
If it is made of copper, it is suitable for copper powder.
Metal paper obtained by adding and mixing organic solvents, organic binders, etc.
The screen is screened on the surface of the green sheet serving as the base 1.
By printing and applying in a predetermined pattern
Is formed. A quartz oscillator 5 is electrically connected to the wiring layer 2.
It is adhered and fixed via the bonding material 7, and at the same time,
The pole is electrically connected to wiring layer 2. The conductive adhesive 7 is generally made of silver powder or the like.
Add conductive powder to thermosetting resin such as epoxy resin
Is formed on the wiring layer 2 by crystal vibration.
The conductor 5 is obtained by adding a conductive powder to an uncured thermosetting resin.
Positioning set through the uncured adhesive consisting of
Vibration by heating and curing the thermosetting resin
The element 5 is fixed at a predetermined position in the concave portion 1a, and
The electrodes of the moving element 5 are electrically connected to the wiring layer 2. Further, the wiring layer 2 has at least an external electrical
Apply 5% of cobalt to the area connected to the wiring conductor on the circuit board.
The second nickel plating layer 8b containing up to 40% by weight is adhered.
Have been. The above-mentioned cobalt is contained in an amount of 5 to 40% by weight.
The second nickel plating layer 8b is a conventional nickel plating layer.
Since the reactivity with tin is extremely high as compared with
The low melting point of tin-lead solder etc. to the wiring conductor of the external electric circuit board
When connecting via the brazing material, the low melting point brazing material and the wiring layer 2
(Second nickel plating layer 8b)
can do. Therefore, the crystal device 6 is downsized,
Surface of wiring layer 2 connected to external electric circuit board of wiring layer 2
For example, a square shape of 0.5 mm x 0.5 mm
Even if it is very small, 0.25 mm2 or less,
The wire layer 2 is firmly attached to the external electric circuit board via a low melting point brazing material.
Can be connected to The above-mentioned cobalt is contained in an amount of 5 to 40% by weight.
The second nickel plating layer 8b is, for example, a nickel supply source.
Nickel sulfate, and cobalt sulfate, a source of cobalt.
And dimethylamine borane as a reducing agent
And citric acid, EDTA (ethylenediaminetetravinegar
Acid), malic acid, tartaric acid, acetic acid, etc.
Adds complexing agents such as thorium salts and stabilizers such as sulfur compounds
The resulting electroless nickel plating solution to a predetermined temperature and pH
In addition to the adjustment, the amount of the wiring layer 2
At least the area to be connected to the external
It is formed by doing. In this case, in the second nickel plating layer 8b,
The cobalt content is determined based on the concentration of cobalt sulfate in the plating solution.
Kinds and amounts of complexing agents, stabilizers, etc., or pH, temperature, etc.
By adjusting the conditions of
Wear. The second nickel plating layer 8b
If the Baltic content is less than 5% by weight, wetting of low melting point brazing material
It is difficult to effectively improve the properties, exceeding 40% by weight
If it is obtained, the corrosion resistance decreases. Therefore, the second nip
The cobalt content of the Kel plating layer 8b is 5 to 40% by weight.
Is specified in the range. The quartz oscillator 5 is connected via the conductive adhesive 7
The base 1 which is adhered and fixed further has a lid 3 on its upper surface.
Made of iron-nickel-cobalt alloy or iron-nickel alloy
Is attached through a metal frame 9 which is
A quartz oscillator 5 is hermetically contained inside a container 4 comprising a lid 3.
Thus, the crystal device 6 is obtained. The metal frame 9 has the lid 3 joined to the base 1.
Acts as a base metal material when attaching, and attaches to the upper surface of the base 1
First, on the upper surface of the base 1, the
The metallized layer 10 for brazing is
Then, the metal frame 9 is placed on the metallization layer 10 for brazing.
It is performed by brazing through brazing material such as c.
You. It should be noted that the brazing metallization layer 10
Are formed, for example, by the same material and the same method as the wiring layer 2.
It is formed at a position surrounding the concave portion 1a on the upper surface of the body 1. The joining of the lid 3 to the metal frame 9
Done, for example, by employing seam welding
Specifically, as shown in FIG.
The body 3 is placed and abutted, and then, for example, outside the lid 3
Rolling while contacting the roller electrode along the edge
In both cases, a large current is passed through this roller electrode.
It is done. The metal frame 9 has at least the lid 3.
The first containing 9 to 12% by weight of phosphorus in the region to be welded
A nickel plating layer 8a is applied. This first ni
The Kel plating layer 8a is formed by welding the lid 3 to the metal frame 9 by welding.
When attached, it melts and acts as a bonding material. The first containing 9 to 12% by weight of phosphorus
The nickel plating layer 8a has a melting point of about 8 due to the action of phosphorus.
It is as low as about 50 ° C.
Place the lid 3 and abut it, along the outer edge of the lid 3
When welding a large current by rolling the roller electrode,
A large thermal shock is applied to the body 1 and cracks and the like
It hardly occurs, and as a result, the base 1 and the lid
3 and the container 4 is completely hermetically sealed.
The quartz oscillator 5 housed in the
It is possible to operate it regularly. The first component containing 9 to 12% by weight of phosphorus is used.
The nickel plating layer 8a is, for example, a nickel supply source.
Nickel sulfate and sodium hypophosphite as a reducing agent
With citric acid and EDTA (ethylenediamine
Organic acids such as tetraacetic acid), malic acid, tartaric acid and acetic acid
Complexing agents, such as sodium salts, and stabilizers, such as sulfur compounds.
The added electroless nickel plating solution is heated at a predetermined temperature, p
H and the metal frame 9 in this plating solution.
By immersing for a predetermined time, at least the lid of the metal frame 9 is
The body 3 is deposited on the area to be welded. In this case,
1 The phosphorus content in the nickel plating layer 8a is determined by the plating solution
Concentration of reducing agent, amount of complexing agent, stabilizer, etc.
By adjusting the conditions such as H and temperature,
Can be The first nickel plating layer 8a is
The melting point is sufficiently low when the content of
The lid 3 cannot be joined to the metal frame 9 by welding.
In this case, cracks occur in the substrate 1 and
%, It becomes hard and brittle, and cracks occur during welding.
Be sure to securely and securely weld the lid 3 to the metal frame 9
Can not be done. Therefore, the first nickel
The phosphorus content of the plating layer 8a needs to be 9 to 12% by weight.
Yes, it is even more preferable to be 9 to 11% by weight. Further, the first nickel plating layer 8a is
When the lid 3 is seam-welded to the metal frame 9, its thickness is
If the thickness is less than 0.5 μm, the amount of the first nickel plating layer 8a is small.
It is difficult to securely weld the lid 3 to the metal frame 9
If the thickness exceeds 5 μm, the first nickel plating layer 8
The adhesion strength to the metal frame 9 decreases due to the internal stress a.
There is a possibility that. Therefore, the first nickel plating layer
The thickness of 8a should be in the range of 0.5 μm to 5 μm
Is preferred. Further, the lid 3 is seam-welded to the metal frame 9.
When joining by metal, the top and side surfaces of the metal frame 9
A roundness with a radius of curvature of 5 to 30 μm at the corner between
In this case, no burrs are formed on the upper surface side of the metal frame 9.
The metal frame 9 and the lid 3 are securely and firmly joined.
To make the reliability of hermetic sealing of the container 4 extremely high.
Can be. Therefore, the metal frame 9 has an upper surface and a side surface.
Round the corner between 5 and 30 μm
It is preferable to keep it. Further, a lid joined to the metal frame 9
3 is a material having a rigidity of 50 GPa or less, specifically, copper,
Metals of at least one of gold and silver, or nicks
Metals such as keel, aluminum, tin, and zinc;
Made of an alloy to which copper or the like has been added.
Well-known metal processing such as rolling and punching
It is formed by applying. The rigidity of the lid 3 is 50 GPa or less.
Because it is below, the linear thermal expansion coefficient of the base 1 and the line of the lid 3
Coefficient of thermal expansion is greatly different, and linear thermal expansion of both
Even if a large thermal stress occurs due to the coefficient difference,
Thermal stress is effective by deforming the lid 3 moderately
Cracks and cracks in the substrate 1
The lid 3 is firmly attached to the base 1 without generating
Completely hermetically seal the container 4 and house it inside the container 4
Operate the crystal unit 5 stably and accurately for a long time.
Can be made. The cover 3 has a rigidity of 50 GP.
a, the cover 3 becomes difficult to deform, and the base 1 and the cover 3
The lid 3 sufficiently absorbs the thermal stress generated between
Cracks and cracks in the substrate 1
The hermetic sealing of the container 4 comprising the base 1 and the lid 3 is broken.
Or Therefore, the lid 3 has a rigidity of 5
It is specified to be 0 GPa or less. The lid 3 has a rigidity.
When the rate is 15 GPa or less, the substrate is easily deformed, and
1 and the lid 3 should be firmly joined by seam welding or the like.
Or the lid 3 is housed inside the container 4
The crystal oscillator 5 is normally operated by contacting the crystal oscillator 5 etc.
There is a risk that it will be difficult to make them. Therefore, the lid
3 is to keep its rigidity between 15 GPa and 50 GPa.
Is preferred. Thus, according to the crystal device 6 described above,
The wiring layer 2 is connected to an external electric circuit, and the electrodes of the crystal unit 5 are connected.
By applying a predetermined voltage to the crystal oscillator 5
Vibration at a predetermined frequency, information processing device such as a computer
Time and frequency bases for electronic devices such as
Used as a reference source. The present invention is limited to the above embodiment.
Not within the scope of the present invention.
Various modifications are possible, for example, as shown in FIG.
A protrusion having a height of about 30 μm to 100 μm is formed on a part of the wiring layer 2.
When the protrusion 11 is formed, the protrusion 11 serves as a spacer.
A certain space between the wiring layer 2 and the crystal unit 5
And a sufficient amount of conductive adhesive 7 is inserted into this space.
And attach the crystal unit 5 to the wiring layer 2 very firmly.
Can be specified. In the above-described quartz crystal device 6,
A concave portion 1a is provided on the surface, and a quartz oscillator 5 is accommodated in the concave portion 1a.
However, as shown in FIG.
The quartz oscillator 5 is mounted and fixed on the base 1, and the fixed water
The crystal oscillator 5 is hermetically sealed with the bowl-shaped lid 3
It can also be applied to the crystal device 6 which has been used. Further, in the above embodiment, the metal frame of the lid 3
9 was performed by seam welding.
Irradiate the electron beam along the outer edge of the lid 3
Electron Bee performs welding with the heat energy
It may be carried out by means of welding. Further, in the above embodiment, the outside of the wiring layer 2 is
The second nickel applied to the area connected to the electric circuit
At least the lid 3 of the metal plating layer 8b and the metal frame 9 is welded.
Nickel plating layer 8a applied to the region to be covered
Was formed using a different plating solution.
For example, nickel source nickel sulfate and cobalt source
Cobalt sulfate as a source and sodium hypophosphite as a reducing agent
With thorium as the main component, citric acid, EDTA
Organic acids such as diaminetetraacetic acid), malic acid, tartaric acid and acetic acid
Complexing agents such as acids or their sodium salts, sulfur compounds, etc.
Electroless nickel-cobalt plating
It may be formed by using a common solution. In this case,
Liquid is one type and low cost, so water
Crystal devices can be inexpensive. However, the first d
The nickel plating layer 8a also contains cobalt,
And 9 to 12% by weight of phosphorus.
Although the nickel plating layer 8b contains phosphorus,
Also, the copper is contained so as to contain 5 to 40% by weight of cobalt.
Concentration of cobalt sulfate and reducing agent in effluent, complexing agent, stabilizer
It is necessary to adjust the amount of addition, etc., or conditions such as pH and temperature
Is there. Further, the second nickel plating layer 8b
A gold plating layer (not shown) on the surface of
With a thickness of 0.03 μm to 1.0 μm,
Effective prevention of oxidative corrosion of second nickel plating layer 8b
At the same time, the wettability of the low melting point brazing material is further improved.
You can also. [0066] According to the quartz crystal device of the present invention, the substrate
The coefficient of linear thermal expansion is 14 × 10^-6/ ℃ ～ 20 × 10^-6/ ℃
(40-400 ° C) and the linear thermal expansion coefficient of the crystal unit.
After fixing the crystal unit to the base
Repeated for both the base and the quartz oscillator due to changes in the head environment
Even if heat is applied, there will be no
Thermal stress due to difference in linear thermal expansion coefficient
This ensures that the crystal unit is securely and strongly attached to the substrate.
It can be fixed firmly, and the quartz crystal
Can be At the same time, according to the crystal device of the present invention,
If the rigidity of the lid is 50 GPa or less,
There is a difference in linear thermal expansion coefficient between the body and the lid, and heat is applied to both.
Even if a large thermal stress occurs between them.
Thermal stress is effective by deforming the lid moderately
As a result, the lid is securely and firmly attached to the base
To complete the hermetic sealing of the container,
The crystal oscillator housed inside is stable for a long time, and
It can be operated accurately. Further, according to the crystal device of the present invention, gold
Apply phosphorus to at least the area of the genus frame where the lid is welded.
The first nickel with a melting point of about 850 ° C containing
Since the Kel plating layer was applied,
When the lid layer is welded to the metal frame by melting the
It is unlikely that a large thermal shock will be transmitted to the body and cause cracks.
As a result, the air in the container consisting of the base and the lid
Completely seal tightly and lengthen the crystal oscillator housed inside the container.
Accurate and stable operation over time
Become. Further, according to the crystal device of the present invention,
For example, if the area of the wiring layer connected to the external
Having a high reactivity with tin containing 5 to 40% by weight of
Since the nickel plating layer was applied, the area of the wiring layer
And the wiring layer and the wiring conductor of the external electric circuit board
Even if the connection area of the
There must be sufficient tin-ditin between the nickel plating layer and the low melting point brazing material.
Forming an alloy layer such as nickel-cobalt
Connection to an external electrical circuit board.
Reliability can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing one embodiment of a crystal device of the present invention. FIG. 2 is a sectional view of a main part of the crystal device of the present invention. FIG. 3 is a sectional view of a main part showing another embodiment of the present invention. FIG. 4 is a sectional view showing another embodiment of the present invention. [Description of Signs] 1... Base 1a... Recess 2... Wiring Layer 3... Lid 4. 6, a crystal device 7, a conductive adhesive 8a, a first nickel plating layer 8b, a second nickel plating layer 9, a metal frame 10, etc. ..Metalizing layer 11 for brazing

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H03H 9/19 H03H 9/19 A

Claims (1)

Claims: 1. A base having a mounting portion on an upper surface and a wiring layer connected to an external electric circuit led out from the mounting portion to an outer surface, and attached to an upper surface of the base. The metal frame surrounding the mounting portion, and fixed to the mounting portion of the base,
A crystal device, comprising: a crystal resonator in which electrodes are electrically connected to the wiring layer; and a lid welded onto the metal frame to house the crystal resonator in an airtight manner. The coefficient of linear thermal expansion of the substrate is 14 × 10 ⁻⁶ / ° C. to 20 ×
10 ⁻⁶ / ° C. (40 to 400 ° C.), the rigidity of the lid is 50 GPa or less, and the metal frame contains at least 9 to 12 wt% of phosphorus in a region where the lid is welded. A quartz device comprising: a nickel plating layer; and a second nickel plating layer containing 5 to 40% by weight of cobalt is applied to at least a region of the wiring layer connected to an external electric circuit.