JP2003069363A - Crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To overcome problems of a conventional crystal device wherein a cover cannot be strongly joined with a substrate due to the difference of a linear thermal expansion coefficient between the substrate and the cover and cracks are produced on the substrate by a thermal shock when the cover is fitted onto the substrate. SOLUTION: The crystal device 7 of this invention comprises a substrate 1 having a wiring layer 2, a metallic frame 12, a crystal vibrator 5, a cover 3 and a semiconductor element 6. The linear thermal expansion coefficient of the substrate 1 is selected to be 14×10<-6> to 20×10<-6> / deg.C (40 to 400 deg.C), the rigidity of the cover 3 is selected to be 50 GPa or less. A first nickel plating layer 11a containing 3 to 12 wt.% phosphorus and 5 to 20 wt.% gold is coated on a region of the metallic frame 12 to which at least the cover 3 is welded, and a 2nd nickel plating layer 11b containing 5 to 20 wt.% gold is coated on a region of the wiring layer 2 which is connected at least with an external electric circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] [0001] The present invention relates to a computer and the like.
In electronic devices such as information processing devices and mobile phones,
Compensation used as a precision reference source for frequency and frequency
Type crystal device. [0002] 2. Description of the Related Art Information processing apparatuses such as computers and portable telephones.
High-precision time and frequency
Temperature-compensated crystal devices used as reference sources
Generally, electrodes for voltage application are formed on a square quartz substrate.
And a temperature compensation for this crystal unit.
The semiconductor element in the package for storing the crystal unit.
It is formed by tightly housing. [0003] The package for storing the crystal unit is generally
Made of an electrically insulating material such as an aluminum oxide sintered body
To form a space in the center of the upper surface to accommodate the crystal unit
A cavity for accommodating semiconductor elements in the center of the lower surface
And each concave surface
Tungsten and molybdenum derived from
Wiring layer made of metal material such as high melting point metal
Substrate, iron-nickel-cobalt alloy, iron-nickel alloy
And a lid made of a metal material such as gold. Then, the electrode of the quartz oscillator is placed in a concave
To the wiring layer exposed on the inner surface of the part and the surrounding substrate surface
By attaching via an electrically conductive adhesive, the crystal unit
Adhesively fixed in the recess and electrically connected to the wiring layer
Further, the semiconductor element is housed in
Bonded and fixed via adhesive such as material and resin
The electrodes of the device element are electrically connected to the wiring layer, and then
A lid is attached to the upper surface of the body, inside a container consisting of a base and a lid.
The quartz oscillator is hermetically accommodated in the
The semiconductor element housed in the part is sealed with a lid or sealing resin.
As a result, a crystal device as a product is completed. [0005] The attachment of the lid to the upper surface of the base is performed as follows.
Generally, brazing is performed by surrounding the recess on the top surface of the substrate.
Form a metallized layer and
Iron-nickel-cobalt alloy or iron-nickel
Metal frame made of metal alloy etc. through a brazing material such as silver brazing
Attach and seam a lid made of metal material to this metal frame
When joining by welding methods such as welding and electron beam welding
It is done by the means called. In this case, the surface of the metal frame
In general, a nickel plating layer is usually
Bath, electrolytic plating using a sulfamic acid bath, etc.
Welding by seam welding etc.
Qualitatively, the nickel plating layer is heated and melted with a welding device,
By joining the lid to the metal frame via nickel
Is being done. Further, an external electric circuit board of the crystal device
Mounting on the external wiring of the wiring layer
Low melting point brazing material such as tin-lead solder is used for the wiring conductor of the circuit board.
This is done by connecting
While being electrically connected to an external electric circuit through the wire layer,
Predetermined frequency according to voltage applied from external electric circuit
Vibrates with. The exposed surface of the wiring layer has a metal frame
The nickel plating layer is applied by the same means as
Good wettability of low melting point brazing material to wire conductor
You. [0007] SUMMARY OF THE INVENTION However, the conventional
The crystal device has a linear thermal expansion coefficient of about 18 ×
10^-6/ ° C (40 to 400 ° C)
It consists of an aluminum oxide sintered body on which the rotor is mounted and fixed.
The substrate has a linear thermal expansion coefficient of about 7 × 10^-6/ ° C (40-40
0 ° C), which is very different.
The conductive adhesive for fixing the hard epoxy resin and the conductive
Made of powder and resistant to deformation, semiconductor for temperature compensation
Since the element generates heat during operation,
Is activated, the heat generated by the semiconductor element for temperature compensation
Repeatedly acts on both the base and the quartz oscillator,
Thermal stress due to difference in linear thermal expansion coefficient between substrate and quartz resonator
Repeatedly acts on the conductive adhesive, and the mechanical
Through the conductive adhesive of the crystal unit
Is broken, and as a result, the function as a crystal device
Had the problem of being lost. [0008] In order to solve the above-mentioned problem,
Let's approximate the linear thermal expansion coefficient to the linear thermal expansion coefficient of a quartz oscillator.
High thermal stress between the substrate and the crystal unit
Means of preventing the occurrence can be considered. However, the coefficient of linear thermal expansion of the
When raised to approximate the vibrator, iron-nickel-
Linear heat of lid made of cobalt alloy, iron-nickel alloy, etc.
Expansion coefficient is about 4 × 10^-6/ ℃ ～ 6 × 10^-6/ ° C (40 ~
400 ° C.), which is large relative to the coefficient of linear thermal expansion with the substrate.
The difference (about 10 × 10^-6/ ° C or higher), iron-d
Lid made of nickel-cobalt alloy, iron-nickel alloy, etc.
The rigidity of the body is as high as about 80-100 GPa and it is difficult to deform
For this reason, the base and lid are repeatedly moved with the operation of the semiconductor element.
When the returning heat acts, the linear heat between the base and the lid
A large thermal stress occurs due to the difference in expansion coefficient and
Cracks and cracks may occur in the substrate due to thermal stress,
The hermetic seal of the container consisting of the body and the lid may break,
As a result, the crystal oscillator housed inside the container consisting of the base and the lid
Accurate and stable operation of the moving element for a long time
The problem of not being able to do is induced. [0010] Further, the conventional crystal device is provided with a metal frame.
Nickel plating layer applied by electrolytic plating method
Has a melting point of about 1000 ° C. or higher.
When welding the lid to the metal frame by melting the plating layer,
Large thermal shock of high temperature exceeding 1000 ° C is transmitted to the substrate
Cracks on the substrate
The hermetic seal of the container consisting of
Accurate and stable operation for a long time
Had no problem. In addition, with the miniaturization of crystal devices, wiring
Since the area of the layer is becoming very small,
Strongly applied to the wiring conductor of the external electric circuit board via low melting point brazing material
There is a problem that it is becoming difficult to firmly connect
Was. The present invention has been made in view of the above problems.
The purpose is to compensate for the temperature
The crystal oscillator for normal and stable over a long period of time
Can be operated to a predetermined external electric circuit.
High accuracy and high reliability that can be securely and firmly connected
It is to provide a reliable crystal device. [0013] SUMMARY OF THE INVENTION A quartz device of the present invention
Has mounting parts on both upper and lower sides, and from each mounting part to the outer surface
A wiring layer connected to the external electrical circuit
And a mounting part attached to the upper surface of the base,
A metal frame to be surrounded, and a mounting portion on the upper surface of the base.
And a crystal oscillator whose electrodes are electrically connected to the wiring layer.
The rotor and the quartz oscillator, which are welded on the metal frame,
The lid is hermetically housed inside and the mounting part on the bottom surface of the base
A semiconductor device which is fixed and performs temperature compensation of the crystal unit
And a linear thermal expansion of the substrate.
Coefficient is 14 × 10^-6/ ℃ ～ 20 × 10^-6/ ° C (40 ~
400 ° C), and the rigidity of the lid is 50 GPa or less.
And a region where at least the lid of the metal frame is welded.
3-12% by weight phosphorus and 5-20% by weight gold
A first nickel plating layer having at least the wiring layer
5 to 20 weight of gold in the area connected to the external electric circuit
% Second nickel plating layer was deposited.
According to the quartz device of the present invention, the linear thermal expansion of the substrate
14 × 10^-6/ ℃ ～ 20 × 10^-6/ ° C (40
~ 400 ° C) and approximates the linear thermal expansion coefficient of the crystal unit.
After fixing the crystal unit to the substrate, temperature compensation
Both the substrate and the quartz oscillator with the operation of the semiconductor device for
Even if heat is repeatedly applied to the
Large thermal stress between the two due to the difference in linear thermal expansion coefficient
It does not occur, and this allows the crystal unit to
Can be fixed firmly and firmly, and crystal oscillator
It can be activated. At the same time, according to the quartz crystal device of the present invention,
If the rigidity of the lid is 50 GPa or less,
There is a difference in linear thermal expansion coefficient between the body and the lid, and heat is applied to both.
Even if a large thermal stress occurs between them.
Thermal stress is effective by deforming the lid moderately
As a result, the lid is securely and firmly attached to the base
To complete the hermetic sealing of the container,
The crystal oscillator housed inside is stable for a long time, and
It can be operated accurately. Further, according to the crystal device of the present invention, gold
Phosphorus should be applied to at least the region of the genus frame where the lid is welded.
Melting point of about 8% containing 12% by weight and 5 to 20% by weight of gold
Whether the first nickel plating layer as low as 50 ° C was applied
The first nickel plating layer is melted to cover the metal frame.
When welding the body, a large thermal shock is transmitted to the
Hardly cause any cracks, and as a result
Completely hermetically seal the container consisting of
To accurately and stably produce crystal oscillators
Can be moved. Further, according to the quartz crystal device of the present invention,
For example, gold may be applied to the area of the wiring layer connected to the external electric circuit.
Excellent reactivity with low melting point brazing filler metals containing up to 20% by weight
Since the second nickel plating layer was applied,
The area is reduced, and wiring between the wiring layer and the external electric circuit board is reduced.
Even if the connection area with the body becomes very small,
Sufficiently tin between the second nickel plating layer and the low melting point brazing material
-Forming an alloy layer of nickel-gold etc. and firmly connecting them
The reliability of the connection to the external electric circuit board can be
Properties can be improved. [0017] DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a quartz device of the present invention will be described.
This will be described in detail with reference to the accompanying drawings. FIG. 1 shows the present invention.
FIG. 1 is a cross-sectional view showing one embodiment of the crystal device of FIG.
Here, 1 is a base, 2 is a wiring layer, and 3 is a lid. this
Quartz vibration in a container 4 formed by the base 1 and the lid 3
The element 5 is housed in an airtight manner and a semiconductor element is
The crystal device 7 is formed by mounting the
You. The substrate 1 has a linear thermal expansion coefficient of 14 × 10
^-6/ ℃ ～ 20 × 10^-6/ ° C (40-400 ° C)
Made of sintered ceramics, crystalline glass, etc.
Concave portions 1a and 1b are provided on both lower surfaces, and concave portions 1a on the upper surface are provided.
The crystal oscillator 5 is housed in the inside, and the concave portion 1b on the lower surface is
Semiconductor element 6 for performing temperature compensation of crystal oscillator 5
Are bonded and fixed via an adhesive 8 and are mounted and accommodated. The substrate 1 has a coefficient of linear thermal expansion of 14 × 1.
0^-6/ ℃ ～ 20 × 10^-6/ ° C (40-400 ° C)
The linear thermal expansion coefficient of the crystal unit 5 (about 18 × 10^-6/
° C: 40 to 400 ° C).
After the crystal oscillator 5 is mounted and accommodated in the part 1a, heat is applied to both parts.
Even if it acts, large thermal stress does not occur between them.
As a result, the quartz oscillator 5 is securely placed in the concave portion 1a of the base 1.
In fact, it can be firmly fixed. The coefficient of linear thermal expansion is 14 × 10^-6/ ℃ ～ 2
0x10^-6/ ° C (40 to 400 ° C)
Contains glass containing 5 to 60% by weight of barium oxide
And the coefficient of linear thermal expansion at 40 to 400 ° C. is 8 × 10^-6
/ Filler containing metal oxide particles of at least / ° C,
Zirconium in the glass and / or filler
(Zr) Compound is converted to ZrO_Two0.1 to 25% by weight
Glass-ceramic sintered body containing in a suitable ratio is preferably used
Is done. The glass ceramic sintered body is made of glass
Containing 5-60% by weight of barium oxide by weight
It is important to use This barium oxide-containing glass
Has a low softening point and a relatively high coefficient of linear thermal expansion.
To reduce the amount of glass and increase the thermal expansion of the filler.
High linear thermal expansion coefficient
Is easily obtained. The amount of barium oxide
The range of 5 to 60% by weight is less than 5% by weight.
It is difficult to lower the softening point of glass and glass, and
To produce a glass ceramic sintered body with high thermal expansion.
It is difficult to manufacture, and if it is more than 60% by weight, vitrification is difficult.
Difficult, unstable characteristics and chemical resistance
This is because it is significantly reduced. Especially of barium oxide
The amount is desirably 20 to 40% by weight. Further, lead (Pb) is substantially contained in the glass.
Should not be included. Manufactured because lead is toxic
Special equipment and controls to prevent poisoning during the process
Required to produce a sintered body at low cost
It is because it disappears. Lead is inevitably mixed as an impurity
The lead content should be less than 0.05% by weight.
It is desirable to be below. Further, the glass at 40 to 400 ° C.
Linear thermal expansion coefficient is 7 × 10^-6/ ℃ ～ 18 × 10^-6/ ℃, special
8 × 10^-6/ ℃ ～ 13 × 10^-6/ ° C is desirable
New This is because if the coefficient of linear thermal expansion deviates from the above range,
Linear thermal expansion difference with the glass ceramic sintered body.
This is because it causes a decrease in strength. Further, the barium oxide-containing glass
The yield point is 400-800 ° C, especially 400-700 ° C
Desirably. This is a barium oxide containing glass and
When molding a mixture consisting of
Add a molding binder such as
After being efficiently removed and fired simultaneously with the substrate 1
It is necessary to match the firing conditions with the wiring layer 2 described below.
If the yield point is lower than 400 ° C, the glass
In order to start sintering at a temperature, for example, silver (Ag), copper
Wiring layer whose sintering start temperature such as (Cu) is 600 to 800 ° C
2 cannot be fired at the same time, and the compact
The binder can no longer be decomposed and volatilized to start
As the residual components may affect the properties
It is. If the yield point is higher than 800 ° C, the amount of glass increases.
Otherwise, sintering becomes difficult, so large amounts of expensive glass
Need to increase the cost of the sintered body.
You. Glass that satisfies the above characteristics is
In addition to barium oxide, at least silicon oxide (Si
O_Two) In a proportion of 25 to 60% by weight, with the balance being oxide oxide.
Udine (B_TwoO_Three), Aluminum oxide (Al_TwoO_Three), Oxidation
Calcium (CaO), magnesium oxide (MgO),
Titanium oxide (TiO_Two), From the group of zinc oxide (ZnO)
It is constituted by at least one selected. On the other hand, a filler combined with the above glass
The component has a linear thermal expansion coefficient at 40 to 400 ° C.
8 × 10^-6Contains at least a metal oxide of / ° C or higher
This is important for increasing the thermal expansion of the sintered body. Linear heat
Expansion coefficient is 8 × 10^-6Do not contain metal oxides of
When the linear thermal expansion coefficient of the glass ceramic sintered body is 14 ×
10^-6/ ° C or higher. Such a coefficient of linear thermal expansion is 8 × 10^-6/ ℃
As the above metal oxide, cristobalite (SiO
_Two), Quartz (SiO_Two), Tridymite (Si
O_Two), Forsterite (2MgO.SiO)_Two), Wow
Last Night (CaO ・ SiO_Two), Monty Seranay
(CaO ・ MgO ・ SiO_Two), Nepheline (Na_TwoO
・ Al_TwoO_Three・ SiO_Two), Melvinite (3CaO · M)
gO ・ 2SiO_Two), Akermite (2CaO.MgO)
・ 2SiO_Two), Magnesia (MgO), Carnegie
G (Na_TwoO ・ Al_TwoO_Three・ 2SiO_Two), Enstatite
(MgO ・ SiO_Two), Petalite (LiAlSi)
_FourO_Ten), Jade (Na_TwoO ・ Al_TwoO_Three・ 4SiO_Two)of
At least one or more selected from the group are included. this
Among them, cristobalite, quartz, trijimai
SiO such as_TwoMaterial, forsterite, enstater
Type selected from the group of
New The glass and the filler are used at different firing temperatures and final temperatures.
Expansion characteristics of glass ceramic sintered body
Are mixed in an appropriate ratio according to the purpose of the above. The oxidation burr
The glass containing glass has a shrinkage onset temperature without filler.
If the temperature is 700 ° C or lower, it will melt at 850 ° C or higher.
The wire layer 2 and the like cannot be provided. But the filler
Causes crystal precipitation during the firing process.
Appropriate liquid phase for liquid phase sintering of filler components
Can be formed at an appropriate temperature. In addition, the entire molded body
Since the shrinkage initiation temperature can be increased,
Of the co-firing condition with the wiring layer 2 by adjusting the
Matching can be achieved. [0029] The ratio of the glass to the filler is
20-80% by volume of powder and 80-20% of filler powder
It is preferable to set the ratio to volume%. With this glass
The amount of the filler component within the above range is the amount of the glass component
Is less than 20% by volume, in other words,
If it is more than the volume%, it is difficult to perform liquid phase sintering, and the sintering temperature
And the wiring layer 2 is melted at the same time as the wiring layer 2 is fired.
There is a risk of doing it. In addition, glass is more than 80%
In other words, if the filler content is less than 20% by volume,
The properties of the binder greatly depend on the properties of the glass,
It is difficult to control the material characteristics and the sintering start temperature is low.
It is difficult to fire simultaneously with the wiring layer 2
Problems arise. Also, the cost of raw materials is high due to the large amount of glass.
Also tend to be higher. The amount of the filler component is determined by the amount of barium oxide.
It is desirable to appropriately adjust the amount according to the yield point.
That is, when the yield point of glass is as low as 400 to 700 ° C.
In this case, the content of filler is 4
It can be blended in a relatively large amount of 0 to 80% by volume. In contrast
When the yield point of glass is as high as 700 to 800 ° C,
Filler content is 20 to 50 volumes due to reduced binding
% Is relatively small. Further, the glass ceramic sintered body is
Zirconi in the filler component and / or the glass component
Compound (Zr compound) is converted to zirconium oxide (ZrO
_Two) Incorporation in a ratio of 0.1 to 25% by weight
That is important. The Zr compound contains barium oxide
Melts into glass and acts to increase the oxidation resistance of the glass.
As a result, the chemical resistance of the glass ceramic
Acidic solution or alkaline solution
Appearance of glass ceramic sintered body after treatment with potash solution
Change and deterioration of the adhesion strength of the wiring layer 2 can be suppressed.
It works. As the Zr compound, for example, ZrO
_Two, ZrSiO_Four, CaO / ZrO_Two, ZrB_Two, ZrP_Two
O₇And at least one selected from the group of ZrB.
It is. This Zr compound is used as a compound powder as a filler component.
Mix as one of the ingredients. In this case, Zr conversion at the time of addition
Compound, especially ZrO_TwoDepending on the BET specific surface area of
The chemical resistance of the ceramic sintered body tends to change.
ET specific surface area is 25m ^Two/ G or more
And BET specific surface area is 25m^TwoLess than / g
The effect of improving the quality tends to be small. Also other formulations
As a form, barium oxide (Ba) is used as glass powder.
O), silicon oxide (SiO_TwoGill oxide as an ingredient other than)
Conium (ZrO_Two) May be used.
No. Incidentally, the above-mentioned Zr compound was set in the above range.
Is less than 0.1%, the effect of improving chemical resistance is low.
If it exceeds 25% by weight, the coefficient of linear thermal expansion is 14 × 10
^-6/ ° C. In particular, the Zr compound is Z
rO_Two0.2 to 10% by weight in conversion is desirable. In addition, chromium oxide,
Select from the group of cobalt oxide, manganese oxide, nickel oxide
At least one of them may be blended. The glass ceramic sintered body is as described above.
In a mixture of glass powder and filler powder prepared in
After adding the appropriate molded organic resin binder,
-By molding means such as blade method, rolling method, mold pressing method, etc.
Reformed into any shape, for example, into a sheet, and then
It is manufactured by firing. The base 1 has upper and lower recesses 1a, 1b.
The wiring layer 2 is led out from the surface to the outer surface,
A portion of the wiring layer 2 exposed on the surface of the concave portion 1a on the upper surface side of the base 1
The electrodes of the crystal unit 5 are bonded together via the conductive adhesive 9.
And a portion exposed to the concave portion 1b on the lower surface side of the base 1
The electrode of the conductive element 6 is a conductive connecting portion such as a bonding wire.
It is connected via the material 10. The wiring layer 2 is housed in the recesses 1a and 1b.
Crystal oscillator 5 and semiconductor element 6 and external electric circuit
It acts to electrically connect with the wiring conductor of the board, copper,
Consists of one or more of silver, nickel, palladium, and gold
Even if it is made of metal material and made of copper
Add an appropriate organic solvent, organic binder, etc. to the copper powder
The metal paste obtained by mixing is mixed with the green paste serving as the base 1.
Print in a predetermined pattern on the surface of the board by screen printing
It is formed by coating. The recess 1 on the upper surface side of the substrate 1 in the wiring layer 2
a Quartz crystal unit 5 is a conductive adhesive
9, and the electrodes of the crystal unit 5 are simultaneously
It is electrically connected to the wiring layer 2. The conductive adhesive 9 is generally made of silver powder or the like.
Add conductive powder to thermosetting resin such as epoxy resin
Is formed on the wiring layer 2 by crystal vibration.
The conductor 5 is obtained by adding a conductive powder to an uncured thermosetting resin.
Positioning set via uncured conductive adhesive consisting of
And heat-curing the uncured thermosetting resin
The crystal oscillator 5 is fixed at a predetermined position in the concave portion 1a.
The electrodes of the crystal unit 5 are electrically connected to the wiring layer 2. Further, the wiring layer 2 has at least an external electrical
Apply 5 to 20 gold to the area of the circuit board to be connected to the wiring conductor
Weight% second nickel plating layer 11b is applied
ing. The second d containing 5 to 20% by weight of gold.
The nickel plating layer 11b is different from the conventional nickel plating layer.
All have high reactivity with the low melting point brazing material, so the wiring layer 2
The low melting point of tin-lead solder etc. to the wiring conductor of the external electric circuit board
When connecting via the brazing material, the low melting point brazing material and the wiring layer 2
Strong connection with (second nickel plating layer 11b)
It can be. Therefore, the crystal device 7 is downsized,
Surface of wiring layer 2 connected to external electric circuit board of wiring layer 2
For example, a square shape of 0.5 mm x 0.5 mm
Even if it is very small, 0.25 mm2 or less,
The wire layer 2 is firmly attached to the external electric circuit board via a low melting point brazing material.
Can be connected to Second gold containing 5 to 20% by weight of the gold.
The nickel plating layer 11b is, for example, a nickel supply source.
Nickel sulphate and gold source sodium gold sulphite
And boron-based reducing agents such as dimethylamine borane
And citric acid, EDTA (ethylenediamine)
Organic acids such as amine tetraacetic acid), malic acid, tartaric acid, and acetic acid.
Or its complexing agents such as sodium salts, sulfur compounds, leadation
Electroless nickel plating solution containing a stabilizer such as a compound
To a predetermined temperature and pH, and the plating solution
Connected to at least an external electric circuit of the wiring layer 2
It is formed by immersing the region for a predetermined time. In this case, in the second nickel plating layer 11b
The gold content of the plating solution is determined by the concentration of gold sodium sulfite in the plating solution.
Degree, complexing agent, type of stabilizer, etc., amount added, or pH, temperature
By adjusting the conditions such as degree, it will be within the specified range
Can be. The second nickel plating layer 11b
If the gold content is less than 5% by weight, the wettability of the low melting point brazing material
Difficult to improve effectively, more than 20% by weight
And a low-melting brazing material form a gold-tin embrittlement layer
The connection reliability of the melting point brazing material is reduced. Therefore, before
The gold content of the second nickel plating layer 11b is 5 to 20.
It is specified in the range of weight%. The quartz oscillator 5 is connected via a conductive adhesive 9.
The base 1 which is adhered and fixed further has a lid 3 on its upper surface.
Made of iron-nickel-cobalt alloy or iron-nickel alloy
Is attached via a metal frame 12 which is
A quartz oscillator 5 is hermetically sealed inside a container 4 comprising
Will be accommodated. The metal frame 12 joins the lid 3 to the base 1.
It acts as a base metal material for the
First, on the upper surface of the base body 1 so as to surround the concave portion 1a.
A frame-shaped brazing metallization layer 13 is applied in advance.
The metal frame 12 on the metallizing layer 13 for brazing.
Performed by brazing through brazing material such as brazing
It is. The brazing metallization layer 13
Are formed, for example, by the same material and the same method as the wiring layer 2.
It is formed at a position surrounding the concave portion 1a on the upper surface of the body 1. Further, the contact of the lid 3 with the metal frame 12
If done, for example, by employing seam welding
Specifically, as shown in FIG.
The lid 3 is placed and abutted, and then, for example, the lid 3
Roll while contacting the roller electrode along the outer edge
To flow a large current through this roller electrode
This is done. The metal frame 12 is also provided with at least the lid 3.
3-12% by weight phosphorus and 5-5% gold in the area where
The first nickel plating layer 11a containing 20% by weight is adhered.
Have been. This first nickel plating layer 11a is a metal frame.
When the lid 3 is attached to the body 12 by welding, it is melted and joined.
Acts as a material. The phosphorus is 3 to 12% by weight and the gold is 5 to 12% by weight.
The first nickel plating layer 11a containing 20% by weight is
The melting point is reduced to about 850 ° C by the action of
Therefore, the lid 3 is placed on and abuts on the metal frame 12.
And roll the roller electrode along the outer edge of the lid 3.
When a large current is applied and welded, a large thermal shock
It is almost impossible to generate cracks and the like in the substrate 1 when applied.
As a result, the container 4 composed of the base 1 and the lid 3
Quartz vibrator with complete hermetic sealing and housed inside container 4
5 can be operated accurately and stably for a long time
It becomes possible. 3 to 12% by weight of phosphorus and 5 to 12% of gold
The first nickel plating layer 11a containing 20% by weight is an example.
For example, a nickel source nickel sulfate and a gold source
Gold sulfite as a reducing agent and hypophosphorous acid as a reducing agent
Main component is sodium, citric acid, EDTA
Organic acids such as diaminetetraacetic acid), malic acid, tartaric acid and acetic acid
Complexing agents such as acids or their sodium salts, sulfur compounds, etc.
Specified electroless nickel plating solution
Temperature and pH, and the plating solution contains gold.
The metal frame 12 is immersed in the metal frame 12 for a predetermined time.
At least in a region where the lid 3 is welded.
You. In this case, the first nickel plating layer 11a contains phosphorus.
The gold content and the gold content are determined by the gold sodium sulfite in the plating solution.
System concentration, reducing agent concentration, addition amount of complexing agent, stabilizer, etc.
Is within a specified range by adjusting conditions such as pH and temperature.
It can be. The first nickel plating layer 11a is
When the phosphorus content is less than 3% by weight, the melting point is lowered sufficiently.
The lid 3 is joined to the metal frame 12 by welding
Cracks occur in the substrate 1,
If it exceeds 10% by weight, it becomes hard and brittle, and cracks during welding.
Occurs and the lid 3 is securely and firmly welded to the metal frame 12.
You will not be able to Therefore, the first nip
The phosphorus content of the Kel plating layer 11a is 3 to 12% by weight.
And more preferably 3 to 11% by weight.
Good. The first nickel plating layer 11a is
When the gold content is less than 5% by weight, the melting point is lowered sufficiently
The lid 3 is welded to the metal frame 12 by welding.
Cracks occur in the substrate 1 when
If it exceeds 10% by weight, the rigidity is reduced, and the metal frame 12
The reliability of the bonding to the substrate decreases. Therefore the
The gold content of one nickel plating layer 11a is 5 to 20 weight
%. Further, the first nickel plating layer 11a
When the lid 3 is seam-welded to the metal frame 9,
If the size is less than 0.5 μm, the first nickel plating layer 11a
Since the amount is small, the lid 3 is firmly welded to the metal frame 12.
When the thickness exceeds 5 μm, the first nickel
Due to the internal stress of the stripping layer 11a, the metal frame 12
There is a possibility that the wearing strength is reduced. Therefore, the first nip
The thickness of the Kell plating layer 11a is in the range of 0.5 μm to 5 μm
It is preferable to keep Further, the cover 3 is sealed to the metal frame 12.
When joining by metal welding, the upper surface of the metal frame 12
A radius of curvature of 5 to 30 μm is formed at the corner between
If formed, burrs are formed on the upper surface side of the metal frame 12.
The metal frame 12 and the lid 3 are securely and strongly
Solidly joined to achieve extremely high reliability of hermetic sealing of the container 4
Can be done. Therefore, the metal frame 12 is
The radius of curvature between the top and side surfaces is 5 to 30 μm.
It is preferable to make it round. Further, a lid joined to the metal frame 12
The body 3 is made of a material having a rigidity of 50 GPa or less, specifically,
Metals consisting of one or more of copper, gold, silver, or
Metals such as nickel, aluminum, tin, zinc, phosphorus,
It is made of an alloy to which silicon or the like is added.
Well-known metal processing such as rolling and punching
It is formed by applying a process. The rigidity of the lid 3 is 50 GPa or less.
Because it is below, the linear thermal expansion coefficient of the base 1 and the line of the lid 3
Coefficient of thermal expansion is greatly different, and linear thermal expansion of both
Even if a large thermal stress occurs due to the coefficient difference,
Thermal stress is effective by deforming the lid 3 moderately
Cracks and cracks in the substrate 1
The lid 3 is firmly attached to the base 1 without generating
Completely hermetically seal the container 4 and house it inside the container 4
Operate the crystal unit 5 stably and accurately for a long time.
Can be made. The cover 3 has a rigidity of 50 GP.
a, the cover 3 becomes difficult to deform, and the base 1 and the cover 3
The lid 3 sufficiently absorbs the thermal stress generated between
Cracks and cracks in the substrate 1
The hermetic sealing of the container 4 comprising the base 1 and the lid 3 is broken.
Or Therefore, the lid 3 has a rigidity of 5
It is specified to be 0 GPa or less. The lid 3 has a rigidity.
When the rate is 15 GPa or less, the substrate is easily deformed, and
1 and the lid 3 should be firmly joined by seam welding or the like.
Or the lid 3 is housed inside the container 4
The crystal oscillator 5 is normally operated by contacting the crystal oscillator 5 etc.
There is a risk that it will be difficult to make them. Therefore, the lid
3 is to keep its rigidity between 15 GPa and 50 GPa.
Is preferred. On the other hand, a concave portion provided on the lower surface of the base 1
1b is a semiconductor for performing temperature compensation of the crystal unit 5
The element 6 is accommodated and fixed, and the semiconductor element 6
The oscillation frequency of the crystal unit 5 fluctuates with a change in temperature
And always keeps it constant. The semiconductor element 6 is attached to a base via an adhesive 8.
1 and adhesively fixed to the bottom surface of the concave portion 1b provided on the lower surface.
And each electrode of the semiconductor element 6 is a bonding wire.
Through the conductive connecting member 10 such as
It is electrically connected to the outgoing wiring layer 2. The semiconductor element 6 is placed on the bottom of the recess 1b.
The adhesive 8 to be adhered and fixed to the substrate has an elastic modulus of 1 GPa or less.
In this case, heat acts on the base 1 and the semiconductor element 6,
Large thermal stress due to the difference in linear thermal expansion coefficient between the two
Even if it occurs, the thermal stress may cause the adhesive 8 to be deformed moderately.
The semiconductor element 6 and the like.
No mechanical destruction occurs in the semiconductor element 6
Can be securely fixed to body 1 for a long time
Temperature compensation of the crystal unit 5
The long-term reliability of the crystal device 7
It can be even higher. A semiconductor element 6 is bonded and fixed to the base 1.
When the elastic modulus exceeds 1 GPa, the adhesive 8
Is large thermal stress generated between the base 1 and the semiconductor element 6
Becomes difficult to absorb satisfactorily, and the semiconductor element 6
Mechanical destruction may result. The adhesive 8 has an elastic modulus of 0.5.
If it is less than GPa, it is easy to deform and it is too easy to retain shape.
Since the semiconductor element 6 always drops, the semiconductor element 6 is placed in the concave portion 1b of the base 1.
There is a tendency that it is difficult to securely adhere and fix.
Therefore, the adhesive 8 has an elastic modulus of 0.5 GPa to 1 GPa.
It is preferable to set GPa. The adhesive 8 having an elastic modulus of 1 GPa or less is
For example, acrylic rubber, isoprene rubber, epoxy resin
A composition formed by adding rubber particles such as is preferably used,
As the epoxy resin, bisphenol A type, bis
Epoxy such as phenol F type, rubber modified type, urethane modified type
A xy resin is preferably used. In this case, epoxy resin
The amount of rubber particles added to the adhesive 8
Can reduce the elastic modulus of the epoxy resin
(Structure, degree of crosslinking, degree of polymerization, type of curing agent, etc.)
By controlling the amount of rubber particles added, the elasticity of the adhesive 8 can be improved.
The modulus can be 1 GPa or less. The amount of rubber particles added to the epoxy resin
Exceeds 50% by weight, the fluidity of the uncured resin composition
Greatly decreases, and an adhesive material is provided between the semiconductor element 6 and the base 1.
8 is difficult to intervene uniformly, and the semiconductor element 6
Tends to be difficult to firmly fix
You. Therefore, rubber particles are added to epoxy resin for adhesion.
When the material is used, the amount of addition is determined by setting the elastic modulus of the adhesive 8 to 1G.
50% by weight or less within the range of Pa or less
Is preferred. The adhesive 8 having an elastic modulus of 1 GPa or less is
Further, not only the epoxy resin composition but also urea resin,
Resin, polyurethane resin, silicone resin, etc.
Thermosetting resin, or a thermosetting resin such as silica
May be formed using a resin composition to which a filler component is added.
No. Further, it is accommodated in the concave portion 1b of the substrate 1.
Semiconductor element 6 is sealing resin 1 filled in recess 1b.
4 is hermetically sealed. The semiconductor element 6 is sealed with a sealing resin.
It is not limited to the one performed in step 14,
To attach the lid to the lower surface so as to close the recess 1b
Therefore, it may be performed. Thus, according to the crystal device 7 described above,
The wiring layer 2 is connected to an external electric circuit, and the electrodes of the crystal unit 5 are connected.
By applying a predetermined voltage to the crystal oscillator 5
Vibrates at a predetermined frequency, and the semiconductor element 6
The temperature of the crystal unit 5 is compensated, and the
Time and time in electronic devices such as information processing devices and mobile phones
Used as an accurate reference source of frequency. The present invention is limited to the above embodiment.
Not within the scope of the present invention.
Various modifications are possible, for example, as shown in FIG.
A protrusion having a height of about 30 μm to 100 μm is formed on a part of the wiring layer 2.
When the protrusion 15 is formed, the protrusion 15 serves as a spacer.
A certain space between the wiring layer 2 and the crystal unit 5
And a sufficient amount of conductive adhesive 9 is inserted into this space.
And attach the crystal unit 5 to the wiring layer 2 very firmly.
Can be specified. In the above-described quartz crystal device 7,
A concave portion 1a is provided on the surface, and a quartz oscillator 5 is accommodated in the concave portion 1a.
However, as shown in FIG.
The quartz oscillator 5 is mounted and fixed on the base 1, and the fixed water
The crystal oscillator 5 is hermetically sealed with the bowl-shaped lid 3
It can also be applied to the crystal device 7 which has been used. Further, in the above embodiment, the metal frame of the lid 3
Welding for 12 was done by seam welding,
This is irradiated with an electron beam along the outer edge of the lid 3.
Electron beam that radiates and welds with the heat energy
It may be carried out by means of a beam welding. Further, in the above embodiment, the outside of the wiring layer 2 is
The second nickel applied to the area connected to the electric circuit
At least the lid 3 of the metal plating layer 11b and the metal frame 12
First nickel plating layer applied to the area to be welded
11a was formed using a different plating solution.
For example, nickel sulfate, a nickel source, and gold
The source is sodium gold sulfite and the reducing agent
Sodium acid and citric acid, EDTA
(Ethylenediaminetetraacetic acid), malic acid, tartaric acid, acetic acid
Complexing agents such as organic acids such as
Electroless nickel-metallized with stabilizers such as compounds
It may be formed by using a common solution. In this case,
As one type of plating solution and low cost,
Quartz devices can be inexpensive. However, the first
At least phosphorus is 3 to 1 in the nickel plating layer 11a.
2% by weight, 5 to 20% by weight of gold,
Although the second nickel plating layer 11b contains phosphorus,
At least 5 to 20% by weight of gold.
The concentration of the reducing agent, the amount of the complexing agent, the stabilizer, etc.
It is necessary to adjust conditions such as pH and temperature. Further, the second nickel plating layer 11
b, further apply a gold plating layer (not shown)
With a thickness of 0.03 μm to 1.0 μm,
Effectively prevents oxidative corrosion of the second nickel plating layer 11b
And the wettability of the low melting point brazing material is further improved.
You can also. [0076] According to the quartz crystal device of the present invention, the substrate
The coefficient of linear thermal expansion is 14 × 10^-6/ ℃ ～ 20 × 10^-6/ ℃
(40-400 ° C) and the linear thermal expansion coefficient of the crystal unit.
After fixing the crystal unit to the substrate,
Substrate and quartz oscillator with operation of semiconductor device for degree compensation
Substrate and crystal vibration even if heat is repeatedly applied to both
Large heat caused by the difference in linear thermal expansion coefficient between the two
No stress is generated, which causes the crystal
It can be fixed firmly and firmly to the base,
It can be operated accurately. At the same time, according to the quartz crystal device of the present invention,
If the rigidity of the lid is 50 GPa or less,
There is a difference in linear thermal expansion coefficient between the body and the lid, and heat is applied to both.
Even if a large thermal stress occurs between them.
Thermal stress is effective by deforming the lid moderately
As a result, the lid is securely and firmly attached to the base
To complete the hermetic sealing of the container,
The crystal oscillator housed inside is stable for a long time, and
It can be operated accurately. Further, according to the crystal device of the present invention, gold
Phosphorus should be applied to at least the region of the genus frame where the lid is welded.
Melting point of about 8% containing 12% by weight and 5 to 20% by weight of gold
Whether the first nickel plating layer as low as 50 ° C was applied
The first nickel plating layer is melted to cover the metal frame.
When welding the body, a large thermal shock is transmitted to the
Hardly cause any cracks, and as a result
Completely hermetically seal the container consisting of
To accurately and stably produce crystal oscillators
Can be moved. Further, according to the quartz crystal device of the present invention,
For example, gold may be applied to the area of the wiring layer connected to the external electric circuit.
Excellent reactivity with low melting point brazing filler metals containing up to 20% by weight
Since the second nickel plating layer was applied,
The area is reduced, and wiring between the wiring layer and the external electric circuit board is reduced.
Even if the connection area with the body becomes very small,
Sufficiently tin between the second nickel plating layer and the low melting point brazing material
-Forming an alloy layer of nickel-gold etc. and firmly connecting them
The reliability of the connection to the external electric circuit board can be
Properties can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing one embodiment of a crystal device of the present invention. FIG. 2 is a sectional view of a main part of the crystal device of the present invention. FIG. 3 is a sectional view of a main part showing another embodiment of the present invention. FIG. 4 is a sectional view showing another embodiment of the present invention. [Description of Signs] 1a ... recess 2 ... wiring layer 3 ... lid 4 ... container 5 ... crystal oscillator 6 ... semiconductor Element 7 Crystal device 8 Adhesive 9 Conductive adhesive 10 Conductive connecting member 11a First nickel plating layer 11b 2 Nickel plating layer 12 Metal frame 13 Brazing metallization layer 14 Sealing resin 15 Projection

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H03B 5/32 H03B 5/32 H H03H 9/10 H03H 9/10 F term (Reference) 5J079 AA04 BA02 BA43 FA01 HA03 HA07 HA09 HA16 HA25 HA29 KA05 5J108 BB02 CC04 EE03 EE04 EE07 EE18 FF11 FF14 GG03 GG11 GG15 GG16 JJ04

Claims (1)

Claims: 1. A base having mounting portions on both upper and lower surfaces, and having a wiring layer connected to an external electric circuit led out from each mounting portion to an outer surface; A metal frame attached to and surrounding the mounting portion, a quartz oscillator fixed to the mounting portion on the upper surface of the base, and an electrode electrically connected to the wiring layer, and welded on the metal frame. And a semiconductor device fixed to a mounting portion on the lower surface of the base and a semiconductor element for performing temperature compensation of the quartz resonator, wherein the base line is Thermal expansion coefficient is 14 × 10 ^-6 / ° C to 20 ×
10 ⁻⁶ / ° C. (40 to 400 ° C.), the rigidity of the lid is 50 GPa or less, and 3 to 12% by weight of phosphorus and gold in at least a region of the metal frame where the lid is welded. A first nickel plating layer containing 5 to 20% by weight, and a second nickel plating layer containing 5 to 20% by weight of gold is applied to at least a region of the wiring layer connected to an external electric circuit. And the crystal device.