JP2010135874A - Surface mount crystal oscillator - Google Patents

Surface mount crystal oscillator Download PDF

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Publication number
JP2010135874A
JP2010135874A JP2008307041A JP2008307041A JP2010135874A JP 2010135874 A JP2010135874 A JP 2010135874A JP 2008307041 A JP2008307041 A JP 2008307041A JP 2008307041 A JP2008307041 A JP 2008307041A JP 2010135874 A JP2010135874 A JP 2010135874A
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Prior art keywords
frame wall
container body
crystal oscillator
metal
seam
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Japanese (ja)
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Koichi Moriya
貢一 守谷
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Nihon Dempa Kogyo Co Ltd
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Nihon Dempa Kogyo Co Ltd
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Priority to JP2008307041A priority Critical patent/JP2010135874A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface mount oscillator that prevents cracks during seam welding. <P>SOLUTION: The surface mount crystal oscillator has a crystal piece 2 and an IC chip 3 arranged in parallel in a horizontal direction on the inner bottom surface of a container body 1 made of laminated ceramic and having a bottom wall 1a and a frame wall 1b, and a metal cover 4 bonded to a seam ring 12 provided on a frame wall upper surface as an opening end face of the container body 1 by seam welding. In the surface mount crystal oscillator, the seam ring 12 on the frame wall upper surface is separated from both inner and outer circumferences of the frame wall 1b and the width of the frame wall 1b is increased. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は表面実装用の水晶発振器（以下、表面実装発振器とする）を技術分野とし、特に低背化とした表面実装発振器に関する。   The present invention relates to a surface mount crystal oscillator (hereinafter referred to as a surface mount oscillator), and more particularly to a surface mount oscillator having a low profile.

（発明の背景）
表面実装発振器は小型・軽量であることから、特に携帯電話に代表される携帯型の電子機器に周波数や時間の基準源として内蔵される。このようなものの一つに、水晶片とＩＣチップとを水平方向に並列に配置して、例えばＳＩＭカードを含む電子カード用の表面実装発振器が提案されている。 (Background of the Invention)
Since the surface-mounted oscillator is small and lightweight, it is built in a portable electronic device represented by a mobile phone as a reference source for frequency and time. As one of such devices, a surface mount oscillator for an electronic card including, for example, a SIM card has been proposed in which a crystal piece and an IC chip are arranged in parallel in the horizontal direction.

（従来技術の一例）
第３図は一従来例を説明する表面実装発振器の図で、同図（ａｂ）は断面図、同図（ｃ）は金属カバーを除く平面図である。なお、これらは特許文献１及び２から想定される従来例である。 (Example of conventional technology)
FIG. 3 is a diagram of a surface-mount oscillator for explaining a conventional example, in which FIG. 3 (ab) is a sectional view and FIG. 3 (c) is a plan view excluding a metal cover. These are conventional examples assumed from Patent Documents 1 and 2.

表面実装発振器は底壁１ａに枠壁１ｂを積層した容器本体１内に水晶片２とＩＣチップ３とを収容し、金属カバー４を被せて密閉封入する。容器本体１は断面を凹状として平面を矩形状とした積層セラミックからなる。そして、容器本体１の内底面には一対の水晶保持端子５及びＩＣチップ３の回路端子６を有し、外底面にはセット基板に対する実装端子７を有する。   The surface mount oscillator accommodates a crystal piece 2 and an IC chip 3 in a container body 1 in which a frame wall 1b is laminated on a bottom wall 1a, and a metal cover 4 is covered and hermetically sealed. The container body 1 is made of a laminated ceramic having a concave cross section and a rectangular plane. The container body 1 has a pair of crystal holding terminals 5 and a circuit terminal 6 of the IC chip 3 on the inner bottom surface, and a mounting terminal 7 for the set substrate on the outer bottom surface.

水晶片２は矩形状として例えばＡＴカットとする。両主面には励振電極８を有し、長さ方向の一端部両側に引出電極９を延出する。そして、引出電極９の延出した水晶片２の一端部両側を、導電性接着剤１０によって水晶保持端子５に固着する。ＩＣチップ３は発振回路を構成する増幅器等を集積化し、容器本体１の内底面に水晶片２と隣接して水平方向に並列に配設される。そして、例えばバンプ１１を用いてフリップチップボンディングし、回路機能面の図示しない各ＩＣ端子が内底面の回路端子６に電気的に接続する。   The crystal piece 2 is rectangular, for example, AT cut. Both main surfaces have excitation electrodes 8, and extraction electrodes 9 extend on both sides of one end in the length direction. Then, both sides of one end portion of the crystal piece 2 from which the extraction electrode 9 extends are fixed to the crystal holding terminal 5 by the conductive adhesive 10. The IC chip 3 integrates an amplifier and the like constituting an oscillation circuit, and is arranged in parallel in the horizontal direction adjacent to the crystal piece 2 on the inner bottom surface of the container body 1. Then, for example, flip-chip bonding is performed using the bumps 11, and each IC terminal (not shown) on the circuit function surface is electrically connected to the circuit terminal 6 on the inner bottom surface.

ＩＣ端子中の水晶端子は水晶保持端子５と電気的に接続し、例えば残りの電源、アース、出力及びＡＦＣ端子等はスルーホール加工による端面電極７ａ等を経て実装端子７と電気的に接続する。金属カバー４は母材をコバールとしてＮｉメッキし、容器本体１の開口端面に設けられたシームリング１２に例えばシーム溶接によって接合される。シームリング１２は金属厚膜１２ａあるいは金属薄板１２ｂからなり、容器本体１の開口端面となる枠壁上面に対して内周が一致し、クリアランスの点から外周が内側に離間する。   The crystal terminal in the IC terminal is electrically connected to the crystal holding terminal 5. For example, the remaining power supply, ground, output, AFC terminal, and the like are electrically connected to the mounting terminal 7 through the end face electrode 7 a by through-hole processing. . The metal cover 4 is Ni-plated with a base material of Kovar, and is joined to a seam ring 12 provided on the opening end surface of the container body 1 by, for example, seam welding. The seam ring 12 is made of a thick metal film 12a or a thin metal plate 12b, and the inner circumference coincides with the upper surface of the frame wall serving as the opening end face of the container body 1, and the outer circumference is spaced inward from the point of clearance.

この場合、シームリングはいずれも印刷によるＷ（タングステン）やＭo（モリブテン）とした下地電極を枠壁上面の全面に形成し、その上にメッキによるＮi（ニッケル）及びＡu（金）を順次に積層する。なお、メッキによる膜厚（約5.5μｍ）は格段に小さく厚みは下地電極に依存する。そして、金属厚膜１２ａの場合は、下地電極を例えば多層塗りとして厚みを大きくする「第３図（ａ）」。また、金属薄板１２ｂの場合は、下地電極を一層塗りとしてメッキによるＮｉ及びＡu上に例えば銀ロウを用いて金属薄板（コバール）１２ｂを接合する「第３図（ｂ）」。   In this case, the seam ring is formed by printing W (tungsten) or Mo (molybdenum) on the entire upper surface of the frame wall, and Ni (nickel) and Au (gold) by plating are sequentially formed thereon. Laminate. Note that the film thickness by plating (about 5.5 μm) is remarkably small, and the thickness depends on the base electrode. In the case of the thick metal film 12a, the base electrode is multi-layered, for example, to increase the thickness "FIG. 3 (a)". Further, in the case of the metal thin plate 12b, the base electrode is applied as a single layer, and the metal thin plate (Kovar) 12b is joined onto Ni and Au by plating using, for example, silver brazing [FIG. 3 (b)].

このようなものでは、水晶片２とＩＣチップ３とを容器本体１の内底面に水平方向に並列に配設（並設）する。したがって、例えば内壁段部に一端部を固着した水晶片２の下面にＩＣチップ３を配置し、即ち垂直方向に配置したものに比較して高さ寸法を小さくできる。これにより、薄型とした電子機器さらに電子カードに内蔵する表面実装発振器として適する。   In such a case, the crystal piece 2 and the IC chip 3 are arranged (in parallel) in the horizontal direction on the inner bottom surface of the container body 1. Therefore, for example, the IC chip 3 can be arranged on the lower surface of the crystal piece 2 whose one end is fixed to the inner wall stepped portion, that is, the height dimension can be reduced as compared with the one arranged in the vertical direction. Thereby, it is suitable as a surface-mount oscillator built in a thin electronic device or an electronic card.

ちなみに、水晶片２とＩＣチップ３とを水平方向に並設した場合は、容器本体１の高さを0.3ｍｍとし、金属カバー４を70μｍとする。そして、容器本体１の開口端面のシームリング１２を金属体（120μｍ）とした場合は高さ寸法を約0.5ｍｍとし、シームリング１２を金属厚膜（10〜20μｍ）とした場合は高さ寸法を約0.4ｍｍにできる。   Incidentally, when the crystal piece 2 and the IC chip 3 are juxtaposed in the horizontal direction, the height of the container body 1 is 0.3 mm and the metal cover 4 is 70 μm. When the seam ring 12 on the opening end face of the container body 1 is a metal body (120 μm), the height dimension is about 0.5 mm, and when the seam ring 12 is a metal thick film (10 to 20 μm), the height dimension. Can be about 0.4 mm.

これに対し、水晶片２とＩＣチップ３とを垂直方向に配置した場合は、容器本体１の高さを0.55ｍｍとする。そして、シームリング１２（金属体120μｍ）及び金属カバー４（70μ）の厚みを加えると、約0.75ｍｍとなる。したがって、水晶片２とＩＣチップ３とを水平方向に並設した場合の高さ寸法を小さくできる。
特開平９−８３２４８号公報 特開２００６−１３６５０号公報 特開２００３−８６７２３号公報 On the other hand, when the crystal piece 2 and the IC chip 3 are arranged in the vertical direction, the height of the container body 1 is set to 0.55 mm. When the thickness of the seam ring 12 (metal body 120 μm) and the metal cover 4 (70 μm) is added, the thickness is about 0.75 mm. Therefore, the height dimension when the crystal piece 2 and the IC chip 3 are juxtaposed in the horizontal direction can be reduced.
Japanese Patent Laid-Open No. 9-83248 JP 2006-13650 A JP 2003-86723 A

（従来技術の問題点）
しかしながら、上記構成の表面実装発振器では、水晶片２とＩＣチップ３とを並列に配置して高さ寸法を小さくするものの、容器本体１の開口端面（枠壁上面）に金属カバー４をシーム溶接によって接合する際、容器本体１にクラック（亀裂や欠け）を生ずる問題があった。 (Problems of conventional technology)
However, in the surface mount oscillator configured as described above, although the crystal piece 2 and the IC chip 3 are arranged in parallel to reduce the height dimension, the metal cover 4 is seam welded to the opening end surface (the upper surface of the frame wall) of the container body 1. When joining by this, there existed a problem which produces a crack (a crack and a chip) in the container main body 1.

すなわち、シーム溶接では、図示しない一対の電極ローラを金属カバー４の対向辺に当接して押圧しながら回転して電流を供給する。そして、金属カバー４のＮiメッキをジュール熱によって溶融して接合する。したがって、熱の発生に伴う、金属カバー４と容器本体１（セラミック）との膨張係数差に基づいて、容器本体１には応力を生ずる。   In other words, in seam welding, a pair of electrode rollers (not shown) are rotated in contact with the opposite sides of the metal cover 4 and rotated to supply current. Then, the Ni plating of the metal cover 4 is melted and joined by Joule heat. Therefore, stress is generated in the container body 1 based on the difference in expansion coefficient between the metal cover 4 and the container body 1 (ceramic) due to the generation of heat.

そして、容器本体１の枠壁１ｂの高さが大きいほど枠壁１ｂの撓みによって応力は吸収される。しかし、ここでは、水晶片２とＩＣチップ３とを並列配置として枠壁１ｂの高さを小さくすることから、第２図（外底面図）に示したように、底壁１ａの長さ方向を二分する中心線方向（直線Ａ）や、実装端子７を除く対角方向に横断する方向（直線ＢＣ）にクラックを生ずる問題があった。この場合、機械的強度を小さくして耐衝撃性を悪化させるとともに、例えば気密漏れを生じたときは表面実装発振器としての機能が損なわれる問題があった。   And stress is absorbed by the bending of the frame wall 1b, so that the height of the frame wall 1b of the container main body 1 is large. However, here, since the crystal piece 2 and the IC chip 3 are arranged in parallel to reduce the height of the frame wall 1b, the length direction of the bottom wall 1a is shown in FIG. 2 (outer bottom view). There is a problem that cracks are generated in the direction of the center line (straight line A) that bisects and the direction transverse to the diagonal direction excluding the mounting terminals 7 (straight line BC). In this case, there is a problem that the mechanical strength is reduced to deteriorate the impact resistance, and the function as a surface mount oscillator is impaired when, for example, an airtight leak occurs.

（発明の目的）
本発明はシーム溶接時におけるクラックの発生を防止した表面実装発振器を提供することを目的とする。 (Object of invention)
An object of the present invention is to provide a surface mount oscillator that prevents the occurrence of cracks during seam welding.

本発明は、特許請求の範囲（請求項１）に示したように、積層セラミックからなる底壁と枠壁とを有する容器本体の内底面に、水晶片とＩＣチップとを水平方向に並列に配置し、前記容器本体の開口端面となる前記枠壁上面に設けられたシームリングに金属カバーをシーム溶接によって接合してなる表面実装用の水晶発振器において、前記枠壁上面のシームリングは前記枠壁の内周及び外周のいずれからも離間し、前記枠壁の幅を大きくした構成とする。   In the present invention, as shown in the claims (Claim 1), a crystal piece and an IC chip are arranged in parallel in the horizontal direction on the inner bottom surface of a container body having a bottom wall and a frame wall made of laminated ceramic. A surface mount crystal oscillator in which a metal cover is joined by seam welding to a seam ring provided on the upper surface of the frame wall, which is an opening end surface of the container body, wherein the seam ring on the upper surface of the frame wall is the frame It is set apart from both the inner periphery and the outer periphery of the wall, and the width of the frame wall is increased.

このような構成であれば、枠壁上面のシームリングは枠壁の内周及び枠壁のいずれからも離間し、逆に言えば、枠壁の内周及び外周はシームリングよりも突出して形成され、枠壁の幅を大きく広げる。したがって、シーム溶接時の応力を分散して金属カバーとの膨張係数差による容器本体のクラックを防止できる。   In such a configuration, the seam ring on the upper surface of the frame wall is separated from both the inner periphery and the frame wall of the frame wall, and conversely, the inner periphery and outer periphery of the frame wall are formed so as to protrude from the seam ring. And widen the width of the frame wall. Therefore, the stress at the time of seam welding can be dispersed to prevent the container body from cracking due to the difference in expansion coefficient from the metal cover.

（実施態様項）
本発明の請求項２では、請求項１において、前記枠壁上面のシームリングは金属厚膜からなる。これにより、シームリングを金属厚膜として金属薄板よりも厚みが小さいことから、超音波熱圧着時の押圧力が容器本体に直接に作用するので、枠壁の幅を大きくしたことによる請求項１での効果を顕著にする。 (Embodiment section)
According to claim 2 of the present invention, in claim 1, the seam ring on the upper surface of the frame wall is made of a thick metal film. Accordingly, since the seam ring is made of a thick metal film and is thinner than the thin metal plate, the pressing force at the time of ultrasonic thermocompression is directly applied to the container body, so that the width of the frame wall is increased. Makes the effect of

同請求項３では、請求項１において、前記枠壁上面のシームリングは金属膜上に接合した金属薄板からなる。これにより、シームリングとする金属薄板は金属膜厚よりも厚みが大きいので、押圧力や熱膨張係数差を吸収して容器本体の応力を緩和する。   In claim 3, the seam ring on the upper surface of the frame wall is made of a thin metal plate bonded on the metal film. Thereby, since the metal thin plate used as the seam ring is thicker than the metal film thickness, the pressure of the pressing body and the coefficient of thermal expansion are absorbed to relieve the stress of the container body.

第１図は本発明の一実施形態を説明する表面実装発振器の図で、同図（ａｂ）は断面図、同図（ｃ）は金属カバー４を除く平面図である。なお、前従来例と同一部分には同番号を付与してその説明は簡略又は省略する。   FIG. 1 is a view of a surface-mount oscillator for explaining an embodiment of the present invention. FIG. 1 (ab) is a sectional view and FIG. 1 (c) is a plan view excluding a metal cover 4. In addition, the same number is attached | subjected to the same part as a prior art example, and the description is simplified or abbreviate | omitted.

表面実装発振器は前述したように底壁１ａと枠壁１ｂとからなる容器本体１の内底面に水晶片２とＩＣチップ３とを水平方向に並列に配列する。水晶片２は両主面に励振電極８を有し、引出電極９の延出した一端部両側が導電性接着剤１０によって水晶保持端子５に固着される。ＩＣチップ３は回路機能面のＩＣ端子がバンプを用いた超音波熱圧着によって回路端子６に固着される。   As described above, the surface-mounted oscillator has the crystal pieces 2 and the IC chips 3 arranged in parallel in the horizontal direction on the inner bottom surface of the container body 1 composed of the bottom wall 1a and the frame wall 1b. The crystal piece 2 has excitation electrodes 8 on both main surfaces, and both ends of the extended end portion of the extraction electrode 9 are fixed to the crystal holding terminal 5 by the conductive adhesive 10. The IC chip 3 is fixed to the circuit terminal 6 by ultrasonic thermocompression bonding using bumps at the IC terminal on the circuit function surface.

そして、ここでは、容器本体１の枠壁１ｂは従来例に比較して幅を大きくし、開口端面となる枠壁上面のシームリング１２及び下地電極（Ｗ又はＭo）は、枠壁１ｂの内周及び外周から離間して形成される。ちなみに、従来例及び本実施形態でも容器本体１の外形は
3.2×2.5ｍｍとする。そして、枠壁１ｂの幅は従来例では0.35ｍｍとし、本実施形態では0.4ｍｍとする。 Here, the frame wall 1b of the container body 1 has a larger width than that of the conventional example, and the seam ring 12 and the base electrode (W or Mo) on the upper surface of the frame wall serving as the opening end surface are within the frame wall 1b. It is formed apart from the circumference and the outer circumference. By the way, in the conventional example and this embodiment, the outer shape of the container body 1 is
3.2 x 2.5 mm. The width of the frame wall 1b is 0.35 mm in the conventional example, and 0.4 mm in this embodiment.

そして、シームリング１２は前述した下地電極を多層塗りとしてメッキによるＮi及びＡuを積層した金属厚膜１２ａ「第１図（ａ）」とする。あるいは、下地電極を単層塗りとしたメッキによるＮi及びＡu上に金属薄板１２ｂを図示しない銀ロウによって接合する「第１図（ｂ）」。   The seam ring 12 is a metal thick film 12a “FIG. 1 (a)” in which the base electrode described above is applied in multiple layers and Ni and Au are laminated by plating. Alternatively, the metal thin plate 12b is bonded to Ni and Au by plating with the base electrode coated as a single layer by using silver solder (not shown) [FIG. 1 (b)].

このような構成であれば、発明の効果の欄でも記載するように、容器本体１の開口端面となる枠壁上面のシームリング１２は枠壁１ｂの内周及び外周のいずれからも離間して内側に形成される。逆に言えば、枠壁１ｂの内周及び外周は、従来例と基本的に同一幅としたシームリング１２よりも突出して形成され、従来例よりも枠壁１ｂの幅を大きく広げる。したがって、シーム溶接時の超音波熱圧着による熱膨張係数差に基づいた応力は枠壁１ｂによって吸収・分散し、容器本体１の底面を主としたクラックを防止できる。   If it is such a structure, as described also in the column of the effect of the invention, the seam ring 12 on the upper surface of the frame wall serving as the opening end surface of the container body 1 is separated from both the inner periphery and the outer periphery of the frame wall 1b. Formed inside. In other words, the inner periphery and the outer periphery of the frame wall 1b are formed so as to protrude from the seam ring 12 basically having the same width as that of the conventional example, and the width of the frame wall 1b is greatly increased as compared with the conventional example. Therefore, the stress based on the difference in thermal expansion coefficient due to ultrasonic thermocompression during seam welding is absorbed and dispersed by the frame wall 1b, and cracks mainly on the bottom surface of the container body 1 can be prevented.

特に、枠壁上面のシームリング１２は金属厚膜１２ａとして高さ寸法を小さくした場合は、金属厚膜１２ａの厚みが小さくなって容器本体１に直接的に応力を生じるので、枠壁１ｂ幅を大きくしたことによる効果は顕著になる。但し、金属薄板１２ｂとした場合でも、水晶片２とＩＣチップ３とを並列に配置して枠壁の高さが小さくなるので、前述した基本的な効果を奏する。   In particular, when the height dimension of the seam ring 12 on the upper surface of the frame wall is reduced as the metal thick film 12a, the thickness of the metal thick film 12a is reduced and the container body 1 is directly stressed. The effect of increasing the value becomes remarkable. However, even when the metal thin plate 12b is used, the crystal piece 2 and the IC chip 3 are arranged in parallel to reduce the height of the frame wall.

本発明の一実施形態を説明する表面実装発振器の図で、同図（ａｂ）は断面図、同図（ｃ）は金属カバー４を除く平面図である。BRIEF DESCRIPTION OF THE DRAWINGS It is a figure of the surface mount oscillator explaining one Embodiment of this invention, The figure (ab) is sectional drawing, The figure (c) is a top view except the metal cover 4. FIG. 従来例の問題点を説明する表面実装発振器の外底面図である。It is an outer bottom view of the surface mount oscillator explaining the problem of the conventional example. 従来例を説明する表面実装発振器の図で、同図（ａｂ）は断面図、同図（ｃ）は金属カバー４を除く平面図である。It is a figure of the surface mount oscillator explaining a prior art example, the figure (ab) is sectional drawing, and the figure (c) is a top view except the metal cover 4. FIG.

符号の説明Explanation of symbols

１ 容器本体、２ 水晶片、３ ＩＣチップ、４ 金属カバー、５ 水晶保持端子、６ 回路端子、７ 実装端子、８ 励振電極、９引出電極、１０導電性接着剤、１１ バンプ、１２ シームリング、１２ａ 金属厚膜、１２ｂ 金属薄板。   1 container body, 2 crystal piece, 3 IC chip, 4 metal cover, 5 crystal holding terminal, 6 circuit terminal, 7 mounting terminal, 8 excitation electrode, 9 extraction electrode, 10 conductive adhesive, 11 bump, 12 seam ring, 12a metal thick film, 12b metal thin plate.

Claims (3)

積層セラミックからなる底壁と枠壁とを有する容器本体の内底面に、水晶片とＩＣチップとを水平方向に並列に配置し、前記容器本体の開口端面となる前記枠壁上面に設けられたシームリングに金属カバーをシーム溶接によって接合してなる表面実装用の水晶発振器において、前記枠壁上面の金属体は前記枠壁の内周及び外周のいずれからも離間し、前記枠壁の幅を大きくしたことを特徴とする表面実装用の水晶発振器。   A crystal piece and an IC chip are arranged in parallel in the horizontal direction on the inner bottom surface of the container main body having a bottom wall and a frame wall made of laminated ceramic, and provided on the upper surface of the frame wall serving as the opening end surface of the container main body. In a surface-mount crystal oscillator in which a metal cover is joined to a seam ring by seam welding, the metal body on the upper surface of the frame wall is separated from both the inner periphery and the outer periphery of the frame wall, and the width of the frame wall is increased. A crystal oscillator for surface mounting characterized by an increase in size. 請求項１において、前記枠壁上面のシームリングは金属厚膜からなる表面実装用の水晶発振器。   2. The surface-mount crystal oscillator according to claim 1, wherein the seam ring on the upper surface of the frame wall is made of a thick metal film. 請求項１において、前記枠壁上面のシームリングは金属膜上に接合した金属薄板からなる表面実装用の水晶発振器。   2. The surface-mount crystal oscillator according to claim 1, wherein the seam ring on the upper surface of the frame wall is made of a thin metal plate bonded onto a metal film.
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US8080921B2 (en) * 2008-03-10 2011-12-20 Epson Toyocom Corporation Reduced-height piezoelectric device having a piezoelectric resonator and electronic component
JP7369091B2 (en) 2020-05-25 2023-10-25 京セラ株式会社 Optical device lids, optical device packages, and optical devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8080921B2 (en) * 2008-03-10 2011-12-20 Epson Toyocom Corporation Reduced-height piezoelectric device having a piezoelectric resonator and electronic component
JP7369091B2 (en) 2020-05-25 2023-10-25 京セラ株式会社 Optical device lids, optical device packages, and optical devices

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