JP2003142974A - Crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that the reference signal generated by a crystal vibrator attenuates substantially in a wiring layer. SOLUTION: The crystal device 7 comprising a base body 1 which has mount parts 1a and 1b on both its top and reverse surfaces, the crystal vibrator 5 which is fixed to the mount part 1a on the top surface of the base body 1 through a fixing material 8, and a semiconductor element 6 which is mounted on the mount part 1b on the reverse surface of the base body 1 and performs temperature compensation of the crystal vibrator 5 is provided, and the base body 1 is a sinter containing a 25 to 80 wt.% Si component in terms of SiO2 , a 15 to 70 wt.% Ba component in terms of BaO, a 1.5 to 5 wt.% B component in terms of B2 O3 , a 1 to 30 wt.% Al component in terms of Al2 O3 , and a 0 to 30 wt.% Ca component in terms of CaO, the wiring layer 2 is formed of a metal material having <=2.5 μΩ.cm specific electric resistance, and the elasticity of the fixing material 8 is <=2.8 GPa.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature-compensated crystal device used as a highly accurate reference source of time and frequency in information processing devices such as computers and electronic devices such as mobile phones.

[0002]

2. Description of the Related Art A temperature-compensated crystal device used as a high-precision reference source of time and frequency in an information processing device such as a computer or an electronic device such as a mobile phone generally has a rectangular plate-shaped crystal substrate with a voltage applied thereto. It is formed by hermetically accommodating a crystal unit formed by applying electrodes and a semiconductor element for temperature compensating the crystal unit in a crystal unit housing package.

The crystal unit housing package is generally made of an electrically insulating material such as an aluminum oxide sintered body and has a recess for forming a space for accommodating the crystal unit in the center of the upper surface and a center of the lower surface. And a base having a wiring layer made of a metal material such as a refractory metal such as tungsten or molybdenum, which has a recessed portion serving as a space for accommodating a semiconductor element in each part, and which is led out from the surface of each recessed portion to the outer surface, The lid member is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or a ceramic material such as an aluminum oxide sintered body.

Then, the electrodes of the crystal unit are attached to the wiring layer exposed on the inner surface of the concave portion on the upper surface of the base body and the peripheral surface of the base body via a fixing material, whereby the crystal unit is adhered and fixed in the concave section. Together with the wiring layer, the semiconductor element is housed in the recess on the lower surface of the base and the electrode of the semiconductor element is electrically connected to the wiring layer, and then the lid is attached to the upper surface of the base with an adhesive. The quartz crystal unit is hermetically housed in the container consisting of the base body and the lid body by being attached by a bonding means such as adhesive bonding or seam welding, and the semiconductor element housed in the recessed portion on the lower surface of the base body is used for the lid body and sealing. A crystal device as a product is completed by sealing with a resin.

As a fixing material for mounting the crystal unit, a conductive adhesive material is generally used which is a mixture of an organic resin such as epoxy resin and a conductive powder such as silver powder as a main material. It is used.

When the lid is attached to the substrate by seam welding, a frame-shaped brazing metallization layer is usually formed in advance around the recess of the substrate, and the metal frame is brazed to the metallized layer. Then, a method of seam welding the lid to the metal frame is used.

Further, the crystal device is mounted on an external electric circuit board by connecting the wiring layer led out to the outer surface of the substrate to the wiring conductor of the external electric circuit board through a conductive connecting material such as solder. The crystal oscillator is electrically connected to the external electric circuit via the wiring layer and vibrates at a predetermined frequency according to the voltage applied from the external electric circuit to supply the reference signal to the external electric circuit.

[0008]

However, in the conventional crystal device, the wiring layer formed on the substrate is formed of a refractory metal material such as tungsten, molybdenum, or manganese, and the tungsten or the like has a specific electric charge. Since the resistance is as high as 5.4 μΩ · cm (20 ° C) or more, when the reference signal of the crystal unit or the drive signal of the semiconductor element is propagated to the wiring layer, the reference signal or the drive signal is greatly attenuated and the reference signal is increased. It has a drawback that the drive signal cannot be accurately and reliably propagated between the external electric circuit or the crystal oscillator and the semiconductor element.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to enable temperature compensation of a crystal unit effectively by a semiconductor element mounted on a base and to provide a reference signal for the crystal unit. It is an object of the present invention to provide a crystal device that can accurately and surely supply a liquid crystal to an external electric circuit.

[0010]

According to the present invention, there is provided a substrate having mounting portions on both upper and lower surfaces, and a wiring layer extending from each of the mounting portions to the outer surface, and a fixing member interposed between the mounting portions of the substrate. A crystal device comprising a fixed crystal oscillator and a semiconductor element mounted on the lower surface of the base for temperature compensation of the crystal oscillator, wherein the base has a Si component converted to SiO ₂ . 25 to 80% by weight, Ba component converted to BaO 15 to 70% by weight, B component converted to B ₂ O ₃ 1.5 to 5% by weight, Al component converted to Al ₂ O ₃ . 1 to 30% by weight, and the Ca component is more than 0% by weight and 30% by weight or less in terms of CaO, and the wiring layer has a specific electric resistance of 2.5 μΩ · cm (20 ° C.) or less. Is formed of a metal material having the elastic modulus of 2.8 GPa or less It is characterized by being.

Further, the present invention is characterized in that the fixing material is made of an epoxy resin containing rubber particles.

According to the crystal device of the present invention, the substrate is S
The i component is 25 to 80% by weight in terms of SiO ₂ , the Ba component is 15 to 70% by weight in terms of BaO, and the B component is B ₂
1.5 to 5% by weight in terms of O ₃ , Al component is Al ₂ O ₃
1 to 30% by weight in terms of Ca, and a Ca component in the range of more than 0% to 30% by weight in terms of CaO and formed at a firing temperature of about 800 to 1000 ° C. Since it is low, the wiring layer formed by co-firing with the substrate can be formed of copper, silver, or gold whose specific electric resistance is as low as 2.5 μΩ · cm (20 ° C.) or less. When the reference signal of the oscillator or the drive signal of the semiconductor element is propagated, the reference signal or the drive signal is not greatly attenuated, and the reference signal or the drive signal is transmitted between the external electric circuit or the crystal oscillator and the semiconductor element. It is possible to accurately and surely propagate in the meantime.

Further, according to the crystal device of the present invention, as a fixing material for fixing the crystal unit to the substrate, for example, an elastic modulus made of epoxy resin or the like with rubber particles added is 2.8 G.
Since the semiconductor element having a temperature of Pa or less is used, the semiconductor element that performs temperature compensation of the crystal unit generates heat during operation, and the heat repeatedly acts on the base and the crystal unit between the base and the crystal unit. Even if the thermal stress due to the difference in the thermal expansion coefficient between the two repeatedly occurs, the thermal stress is absorbed by deforming the fixing material appropriately, and the fixing material is not mechanically broken. The crystal unit can be securely and firmly fixed to the base for a long period of time, and the long-term reliability of the crystal device can be enhanced.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Next, a crystal device of the present invention will be described in detail with reference to the accompanying drawings. 1 is a sectional view showing an embodiment of the crystal device of the present invention. In FIG. 1, 1 is a base, 2 is a wiring layer, and 3 is a lid. A crystal device 5 is formed by hermetically housing a crystal resonator 5 in a container 4 formed by the base 1 and the lid 3, and mounting and housing a semiconductor element 6 on the lower surface of the base 1.

In the substrate 1, the Si component is 25 to 80% by weight in terms of SiO ₂ , and the Ba component is 1 in terms of BaO.
5 to 70% by weight, B component converted to B ₂ O ₃ is 1.5 to 5
%, The Al component is 1 to 30 wt% in terms of Al ₂ O ₃ , and the Ca component is more than 0 wt% and 30 wt% in terms of CaO. Recesses 1a and 1b are provided on both sides, a crystal resonator 5 is accommodated in the recess 1a on the upper surface, and a semiconductor element 6 for performing temperature compensation of the crystal resonator 5 is brazed in the recess 1b on the lower surface. It is mounted and housed by being fixedly adhered via an adhesive such as glass, organic resin or the like.

The base body 1 has upper and lower recesses 1a, 1b.
The wiring layer 2 is led from the surface to the outer surface of
The electrode of the crystal unit 5 is adhered and fixed to a portion of the wiring layer 2 exposed on the surface of the concave portion 1a on the upper surface of the substrate 1 through a fixing material 8 such as a conductive adhesive, and is exposed in the concave portion 1b on the lower surface of the substrate 1. The electrode of the semiconductor element 6 is connected to the portion via a conductive connecting member 9 such as a bonding wire.

The base 1 made of the sintered body is, for example, S
A raw material powder such as iO ₂ , BaO, B ₂ O ₃ , Al ₂ O ₃ and CaO is added with a binder and a dispersant having an acrylic resin as a main component, a plasticizer and an organic solvent to prepare a sludge and the sludge is A green sheet (raw sheet) is formed by adopting the doctor blade method or the calendar roll method. After that, the green sheet is appropriately punched and a plurality of these are laminated, and the temperature is about 800 ° C to 1 ° C.
It is manufactured by firing at a temperature of 000 ° C.

The substrate 1 has a firing temperature of about 800-1.
Since it is as low as 000 ° C., the wiring layer 2 formed by co-firing with the substrate 1 has a specific electric resistance of 2.5 μΩ · cm (20
C.) or lower, copper, silver, or gold can be formed. As a result, when the reference signal of the crystal unit 5 or the drive signal of the semiconductor element 6 is propagated to the wiring layer 2, the reference signal or the drive signal is changed. No significant attenuation occurs, and the reference signal and drive signal are accurately measured between the external electric circuit or crystal unit and the semiconductor element,
And, it is possible to surely propagate.

The sintered body constituting the base 1 is S
When iO ₂ is less than 25% by weight, the dielectric loss becomes large, and the reference signal of the crystal unit propagating in the wiring layer 2 and the drive signal of the semiconductor element are attenuated or delayed.
If it exceeds 5% by weight, the mechanical strength of the substrate 1 is significantly reduced, and at the same time, the firing temperature becomes high and it becomes difficult to co-fire with the wiring layer 2 made of a metal material such as copper. Therefore, the amount of SiO ₂ is specified in the range of 25-80% by weight.

The sintered body forming the base 1 is made of Ba.
If O is less than 15% by weight, the firing temperature becomes high, making it difficult to co-fire with the wiring layer 2 made of a metal material such as copper. The reference signal of the crystal unit propagating in the layer 2 and the driving signal of the semiconductor element are attenuated or delayed. Therefore, the amount of BaO is specified in the range of 15 to 70% by weight.

Further, the sintered body constituting the base 1 is B ₂
When O ₃ is less than 1.5% by weight, the firing temperature becomes high and it becomes difficult to co-fire with the wiring layer 2 made of a metal material such as copper, and when it exceeds 5% by weight, the mechanical strength of the substrate 1 is increased. The strength is greatly reduced. Therefore, the amount of B ₂ O ₃ is specified in the range of 1.5 to 5% by weight.

Further, the sintered body constituting the base 1 is
When Al ₂ O ₃ is less than 1% by weight, the firing temperature becomes high and it becomes difficult to co-fire with the wiring layer 2 made of a metal material such as copper, and when it exceeds 30% by weight, the dielectric loss becomes large. As a result, the reference signal of the crystal unit and the drive signal of the semiconductor element propagating through the wiring layer 2 are attenuated or delayed.
Therefore, the amount of Al ₂ O ₃ is specified in the range of 1 to 30% by weight.

Further, the sintered body constituting the base 1 is
When CaO is not contained, the sinterability is lowered and the mechanical strength is lowered, and when it exceeds 30% by weight, the firing temperature becomes high and the firing is performed simultaneously with the wiring layer 2 made of a metal material such as copper. Becomes difficult. Therefore, the amount of CaO is 0
It is specified in the range of more than 30% by weight and more than 30% by weight.

The wiring layer 2 formed on the substrate 1
Has a function of electrically connecting the crystal resonator 5 and the semiconductor element 6 housed in the recesses 1a and 1b to the wiring conductor of the external electric circuit board. For example, the specific electric resistance of gold, silver, copper, or the like. Is formed of a metal material of 2.5 μΩ · cm (20 ° C.) or less, and when it is made of copper, a metal paste obtained by adding and mixing an appropriate organic solvent, an organic binder, etc. to copper powder, It is formed by printing and applying a predetermined pattern on the surface of the green sheet to be the substrate 1 by a screen printing method or the like.

When the exposed surface of the wiring layer 2 is covered with a plating layer (not shown) made of a metal having good corrosion resistance such as nickel and gold and good wettability with the brazing material, the wiring layer 2 will be covered. Oxidation and corrosion can be satisfactorily prevented, the soldering property of the brazing material such as solder to the wiring layer 2 can be improved, and the connection of the wiring layer 2 to the wiring conductor of the external electric circuit board can be further facilitated. And it can be assured. Therefore, the wiring layer 2 has a plating layer of nickel, gold or the like on its exposed surface, for example, a nickel or nickel alloy plating layer having a thickness of 1 μm to 10 μm and a gold plating layer having a thickness of 0.1 to 3 μm, which are sequentially deposited. It is preferable to coat with.

When the surface of the wiring layer 2 is coated with a plating layer of nickel, gold or the like, the arithmetic mean roughness (Ra) of the outermost surface thereof is 1.5 μm or less and the root mean square roughness (Rm).
When s) is set to 1.8 μm or less, the reflectance of light on the outermost surface becomes 40% or more, and when fixing the electrode of the crystal unit 5 to the wiring layer 2 via the fixing material 8, and of the semiconductor element 6. When electrically connecting the electrode to the wiring layer 2 via the conductive connecting member 9 such as a bonding wire, the work such as positioning thereof is facilitated. Therefore, the surface of the wiring layer 2 is nickel,
When coating with a plating layer of gold or the like, it is preferable to set the arithmetic mean roughness (Ra) of the outermost surface to 1.5 μm or less and the root mean square roughness (Rms) to 1.8 μm or less.

Further, the arithmetic mean roughness (R) of the outermost surface of the plating layer made of nickel, gold or the like covering the surface of the wiring layer 2
a) is 1.5 μm or less, root mean square roughness (Rms)
In order to reduce the thickness to 1.8 μm or less, the wiring layer 2 is immersed in an electrolytic nickel plating solution in which a brightening agent such as a sulfur compound is added to a conventionally well-known Watt bath to deposit a nickel plating layer on the surface of the wiring layer 2. After that, it is performed by immersing it in a cyan electrolytic gold plating solution and depositing the gold plating layer on the surface of the nickel plating layer.

The concave portion 1 of the wiring layer 2 on the upper surface side of the substrate 1
The crystal resonator 5 is fixed to a portion exposed on the surface a through a fixing member 8. The fixing member 8 is made of, for example, an epoxy resin containing rubber particles and having an elastic modulus of 2.8 GPa or less. Has been formed.

The fixing material 8 has an elastic modulus of 2.8 GPa.
The semiconductor element 6 for temperature compensation of the crystal unit 5 generates heat during operation because it is easily deformed, and the heat repeatedly acts on the base unit 1 and the crystal unit 5 to cause vibration of the base unit 1 and the crystal unit 5. Even if the thermal stress caused by the difference in the thermal expansion coefficient between the child 5 and the child 5 is repeatedly generated, the thermal stress is absorbed by appropriately deforming the fixing material 8, and the fixing material 8
No mechanical damage is caused, and as a result, the crystal unit 5 can be securely and firmly fixed to the base body 1 for a long period of time, and the long-term reliability of the crystal device 7 is enhanced. You can

The fixing member 8 has an elastic modulus of 2.8 GPa.
When the temperature exceeds 1.0, the heat generated by the semiconductor element 6 that performs temperature compensation of the crystal unit 5 repeatedly acts on both the base body 1 and the crystal unit 5, resulting in a difference in thermal expansion coefficient between the base unit 1 and the crystal unit 5. When thermal stress repeatedly acts on the fixing material 8, mechanical destruction of the fixing material 8 is caused, the fixation of the crystal unit 5 through the fixing material 8 is broken, and the reliability of the crystal device 7 is greatly reduced. Will end up. Therefore, the fixing material 8 is specified to have an elastic modulus of 2.8 GPa or less, and more preferably 2 GPa or less.

Fixing material 8 having an elastic modulus of 2.8 GPa or less
For example, a conductive powder such as silver powder added at a ratio of 15 to 60% by weight to an epoxy resin added with rubber particles such as acrylic rubber or isoprene rubber is preferably used.

As the epoxy resin, epoxy resins of bisphenol A type, bisphenol F type, rubber modified type, urethane modified type, etc., particularly those which are viscous liquid (room temperature) when uncured are preferably used. In this case, the elastic modulus of the fixing material 8 can be lowered by increasing the amount of rubber particles added to the epoxy resin, and the state of the epoxy resin (structure, degree of crosslinking, degree of polymerization, type of curing agent, etc.) can be changed. The elastic modulus of the fixing material can be set to 2.8 GPa or less by appropriately controlling the addition amount of the rubber particles. When the amount of rubber particles added to the epoxy resin exceeds 50% by weight, the fluidity of the uncured resin composition is significantly reduced, and the fixing material 8 is provided between the electrode of the crystal unit 5 and the wiring layer 2. Tends to be difficult to intervene uniformly, and it becomes difficult to firmly fix the crystal unit 5 to the substrate 1. Therefore, when rubber particles are added to the epoxy resin, the amount of addition is preferably 50% by weight or less within a range in which the elastic modulus of the fixing material 8 is 2.8 GPa or less.

The fixing member 8 has an elastic modulus of 0.1.
If the pressure is less than GPa, the crystal resonator 5 tends to be deformed too easily, and it tends to be difficult to securely bond and fix the crystal unit 5 to a predetermined position in the recess 1 a of the base 1. Therefore, the fixing material 8 has an elastic modulus in the range of 2.8 GPa or less,
It is preferably set to 0.1 GPa or more.

The fixing material 8 having an elastic modulus of 2.8 GPa or less is not limited to the epoxy resin composition described above, but a thermosetting resin having a low elastic modulus such as silicone resin, or silicone resin such as silica. You may form by adding electroconductive powder to the resin composition which added the filler component.

Further, the base body 1 to which the crystal unit 5 is adhered and fixed via the fixing material 8 has the lid body 3 attached to the upper surface thereof, whereby the inside of the container 4 composed of the base body 1 and the lid body 3. The crystal unit 5 is hermetically housed therein.

The lid 3 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or a ceramic material such as an aluminum oxide sintered body. For example, an iron-nickel-cobalt alloy ingot. It is formed by subjecting the (lump) to well-known metal processing such as rolling and punching.

Further, the lid 3 can be attached to the base body 1 by a method such as a brazing material, glass, an organic resin adhesive or the like, or a welding method such as seam welding. When the lid 3 is attached by seam welding, a frame-shaped brazing metallizing layer 11 is usually attached around the recess 1a on the upper surface of the substrate 1 in the same manner as the wiring layer 2, and The metal frame body 12 is brazed to the brazing metallization layer 11 via a brazing material such as silver braze, and then the metal lid body 3 is placed on the metal frame body 12 and the outer edge of the lid body 3 is placed. This is done by seam welding the parts. In this case, if the metal frame 12 is rounded with a radius of curvature of 5 to 30 μm at the corner between the upper surface and the side surface, burrs are not formed on the upper surface of the metal frame 12. When the lid body 3 is seam welded to the upper surface of the metal frame body 12, the both can be joined reliably and airtightly and firmly. Therefore, it is preferable that the corner portion between the upper surface and the side surface of the metal frame 12 has a roundness with a radius of curvature of 5 to 30 μm.

Furthermore, when the metal frame 12 is rounded with a radius of curvature of 40 to 80 μm at the corner between the lower surface and the side surface, the metal frame 12 is brazed to the metallization layer. When joining to 11 via the brazing material, a space is formed between the brazing metallization layer 11 and the corner portion on the lower surface side of the metal frame body 12, and a large pool of the brazing material is formed in the space to form a metal. Brazing metallization layer 1 of frame 12
Bonding to 1 becomes strong. Therefore, in order to firmly bond the metal frame 12 to the brazing metallization layer 11 via the brazing material, a roundness having a radius of curvature of 40 to 80 μm is formed at the corner between the lower surface and the side surface of the metal frame 12. It is preferably formed.

On the other hand, a semiconductor element 6 for compensating the temperature of the crystal unit 5 is housed and fixed in the recess 1b provided on the lower surface of the base body 1, and the semiconductor unit 6 vibrates the crystal unit 5. It controls that the frequency fluctuates due to temperature changes, and has the function of keeping it constant.

The semiconductor element 6 is adhered and fixed to the bottom surface of the recess 1b provided on the lower surface of the substrate 1 through an adhesive material such as glass, resin or brazing material, and each electrode of the semiconductor element 6 is made of a conductive material such as a bonding wire. The recess 1 of the base body 1 via the connecting member 9
It is electrically connected to the wiring layer 2 exposed at b.

The semiconductor element 6 housed in the recess 1b of the base 1 is the sealing resin 1 filled in the recess 1b.
It is hermetically sealed by 0.

The sealing of the semiconductor element 6 is not limited to the sealing with the sealing resin 10, and a lid is attached to the lower surface of the base 1 so as to close the recess 1b. Good.

Thus, according to the above-mentioned crystal device 7,
By connecting the wiring layer 2 to an external electric circuit and applying a predetermined voltage to the electrodes of the crystal resonator 5, the crystal resonator 5 vibrates at a predetermined frequency, and the semiconductor element 6 causes the temperature of the crystal resonator 5 to rise. It is compensated and used as a highly accurate reference source of time and frequency in information processing devices such as computers and electronic devices such as mobile phones.

The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. For example, as shown in FIG.
When the protrusion 13 is formed on a part of the wiring layer 2, the protrusion 13 serves as a spacer to secure a certain space between the wiring layer 2 and the crystal unit 5, and a sufficient fixing material for this space. The crystal resonator 5 can be extremely firmly adhered and fixed to the wiring layer 2 by inserting 8 therein.

Further, in the above-mentioned crystal device 7, the concave portion 1a is provided on the upper surface of the base body 1 and the crystal resonator 5 is accommodated in the concave portion 1a. As shown in FIG. The present invention can also be applied to a crystal device 7 in which the crystal resonator 5 is mounted and fixed, and the fixed crystal resonator 5 is hermetically sealed with the bowl-shaped lid 3.

[0046]

According to the crystal device of the present invention, the substrate contains 25 to 80% by weight of Si component converted to SiO ₂ , and Ba
Ingredients are 15-70% by weight in terms of BaO, B ingredients are B
1.5 to 5% by weight in terms of ₂ O ₃ , Al component is Al ₂ O ₃
1 to 30% by weight in terms of Ca, and a Ca component in the range of more than 0% to 30% by weight in terms of CaO and formed at a firing temperature of about 800 to 1000 ° C. Since it is low, the wiring layer formed by co-firing with the substrate can be formed of copper, silver, or gold whose specific electric resistance is as low as 2.5 μΩ · cm (20 ° C.) or less. When the reference signal of the oscillator or the drive signal of the semiconductor element is propagated, the reference signal or the drive signal is not greatly attenuated, and the reference signal or the drive signal is transmitted between the external electric circuit or the crystal oscillator and the semiconductor element. It is possible to accurately and surely propagate in the meantime.

Further, according to the crystal device of the present invention, as the fixing material for fixing the crystal oscillator to the base, for example, an elastic modulus made of epoxy resin or the like with rubber particles added is 2.8 G.
Since the semiconductor element having a temperature of Pa or less is used, the semiconductor element that performs temperature compensation of the crystal unit generates heat during operation, and the heat repeatedly acts on the base and the crystal unit between the base and the crystal unit. Even if the thermal stress due to the difference in the thermal expansion coefficient between the two repeatedly occurs, the thermal stress is absorbed by deforming the fixing material appropriately, and the fixing material is not mechanically broken. The crystal unit can be securely and firmly fixed to the base for a long period of time, and the long-term reliability of the crystal device can be enhanced.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a crystal device of the present invention.

FIG. 2 is a cross-sectional view of an essential part showing another embodiment of the crystal device of the present invention.

FIG. 3 is a cross-sectional view showing another embodiment of the crystal device of the present invention.

[Explanation of symbols]

1 ... Base 1a ... Recess 1b ... Recess 2 ... Wiring layer 3 ... Lid 4 ... Container 5 ... Crystal oscillator 6 ... Semiconductor element 7: Crystal device 8 ... Fixing material 9 ... Conductive connection member 10 ... Encapsulating resin 11 ... Metallization layer for brazing 12 ... Metal frame 13 ... Protrusion

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H03H 9/19 C04B 35/00 J

Claims (2)

[Claims] 1. A substrate having mounting portions on both upper and lower surfaces, a wiring layer extending from each of the mounting portions to the outer surface, and a crystal oscillator fixed to the mounting portion of the substrate via a fixing material. And a semiconductor device that is mounted on a mounting portion on the lower surface of the base body and performs temperature compensation of the crystal resonator, wherein the base body has a Si component converted into SiO ₂ of 25 to 80 wt%. The Ba component is converted to BaO in an amount of 15 to 70% by weight,
B component is 1.5 to 5 wt% in terms of B ₂ O ₃ , Al component is 1 to 30 wt% in terms of Al ₂ O ₃ , and Ca component is Ca.
A sintered body containing more than 0% by weight and 30% by weight or less in terms of O, the wiring layer being formed of a metal material having a specific electric resistance of 2.5 μΩ · cm or less, and the elasticity of the fixing material. A crystal device having a rate of 2.8 GPa or less. 2. The crystal device according to claim 1, wherein the fixing material is made of an epoxy resin added with rubber particles.