JP2001267444A - Package for containing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem that a noise enters a semiconductor element to cause erroneous operation. SOLUTION: The package for containing a semiconductor element comprises an insulating basic body 1 and a cover body 2 and has an inner cavity for containing a semiconductor element 3. The cover body 2 is formed of copper or a metal principally comprising copper and the insulating basic body 1 is formed of sintered glass ceramic composed of 20-80 vol.% of glass containing 5-60 wt.% of BaO and 80-20 vol.% of filler having coefficient of thermal expansion of 6 ppm/ deg.C or above at 40-400 deg.C wherein the glass and/or filler contains 0.1-30 wt.% of a Zr compound expressed in terms of ZrO2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for housing a semiconductor device such as a semiconductor integrated circuit device.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, or an aluminum nitride sintered body. An insulating base having a recess for accommodating a semiconductor element, and a plurality of high melting point metal powders such as tungsten, molybdenum, and manganese, which are attached and led out from the bottom surface of the recess or its periphery to the outer peripheral edge or lower surface. A metallized wiring layer, an external connection terminal such as a lead terminal or a solder ball attached to the metallized wiring layer for connecting a semiconductor element housed therein to an external electric circuit, and a lid; A semiconductor element is accommodated in an insulating base, and each electrode of the semiconductor element is connected to a metal via a conductive connection member such as a bonding wire or a metal bump. Electrically connected to the size wiring layer, and thereafter, the semiconductor device as a product by housing the semiconductor element hermetically in the container interior made of an insulating base and the lid.

In the above-described semiconductor device housing package, the lid is made of an iron-nickel alloy or an iron-nickel alloy.
The iron-nickel alloy and the iron-nickel-cobalt alloy have a thermal expansion coefficient (approximately 5 ppm / ° C.) that is lower than that of an aluminum oxide sintered body forming an insulating base. Approximate (about 4-7pp
m / ° C.), heat generated during the operation of the semiconductor element does not generate a large thermal stress between the lid and the insulating base, and the thermal stress causes cracks and cracks in the insulating base, resulting in airtightness of the container. Breaking of the hermetic seal can be effectively prevented, and the semiconductor element can be hermetically housed for a long period of time.

The metallized wiring layer provided on the insulating substrate has a plated layer of nickel, gold or the like deposited on the exposed surface thereof to a predetermined thickness, and the metallized wiring layer is formed by the plated layer of nickel, gold or the like. Is effectively prevented from undergoing oxidative corrosion, and at the same time, the connection of bonding wires, metal bumps and external lead terminals to the metallized wiring layer is good.

[0005]

However, in this conventional package for accommodating a semiconductor element, the lid is formed of an iron-nickel alloy or an iron-nickel-cobalt alloy. Is a ferromagnetic material, the lid is easily magnetized from the outside, and the magnetic flux existing around the semiconductor element housing package is easily transmitted, so that the magnetic flux density increases around the lid. As a result, the semiconductor element housed inside the container consisting of the insulating base and the lid is affected by noise such as voltage induced by the magnetic flux whose density is increased by the lid, causing malfunction such as malfunction. There was a problem that would occur.

In particular, recently, as the integration of semiconductor elements becomes higher, the operating voltage becomes lower, and the size of the semiconductor device becomes smaller, the semiconductor element housed in a container consisting of an insulating base and a lid is replaced with a lid part. Is more susceptible to noise caused by the increase in magnetic flux density, and the risk of malfunction of the semiconductor element due to the noise has become significant.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object the generation of noise can be effectively prevented, and the semiconductor element housed therein can always be operated normally and stably, and a high reliability is achieved. An object of the present invention is to provide a flexible and inexpensive semiconductor element storage package.

[0008]

According to the present invention, there is provided a semiconductor element housing package comprising an insulating base and a lid, and having a space for accommodating a semiconductor element therein, wherein the lid is made of copper. Alternatively, the insulating base is formed of a metal containing copper as a main component, and the insulating base contains 20 to 80% by volume of glass containing 5 to 60% by weight of BaO, and has a thermal expansion coefficient of 6 ppm / ° C. or more at 40 to 400 ° C. 80-20% by volume of a filler, wherein Z is contained in the glass and / or the filler.
It is characterized by being formed of a glass ceramic sintered body containing 0.1 to 30% by weight of an r compound in terms of ZrO ₂ .

According to the package for accommodating a semiconductor element of the present invention, since the lid is made of copper or a metal containing copper as a main component and copper has almost no magnetism, the lid is magnetized by an external magnetic field. This rarely occurs, and the generation of noise due to the high density of the magnetic flux is effectively prevented. As a result, the semiconductor element can always be operated normally and stably.

Further, according to the package for housing a semiconductor element of the present invention, the insulating base of the container for housing the semiconductor element is made of glass 20 to 8 containing 5 to 60% by weight of BaO.
0% by volume and a thermal expansion coefficient of 6p at 40 to 400 ° C.
pm / ° C. or higher, and 80 to 20% by volume of a filler.
Since it is formed of a glass ceramic sintered body containing 0.1 to 30% by weight in terms of rO ₂ , the insulating substrate has a thickness of 40 to 4%.
The thermal expansion coefficient at 00 ° C. is 8.5 to 18.5 ppm /
The temperature can be approximated to the thermal expansion coefficient (copper: 17 ppm / ° C.) of a lid made of copper or a metal containing copper as a main component. As a result, semiconductor elements are generated on the insulating base and the lid during operation. Even if heat or the like is applied, no large thermal stress is generated between the insulating base and the lid,
This effectively prevents the lid from peeling off from the insulating base due to the thermal stress, and the occurrence of cracks, cracks, and the like in the insulating base, and reliably hermetically seals the semiconductor element inside the container for a long time. Thus, the semiconductor element can be more reliably stably and normally operated.

At the same time, in the glass ceramic sintered body, the Young's modulus of the glass containing 5 to 60% by weight of BaO is as low as 50 to 80 GPa, and the Young's modulus of the insulating base is as low as about 50 to 80 GPa. I have. Therefore, even if a slight thermal stress is generated between the insulating base and the lid due to a difference in thermal expansion coefficient between the two, the thermal stress is effectively absorbed and relaxed by appropriately deforming the insulating base. As a result, the occurrence of cracks, cracks, and the like in the insulating base is effectively prevented, and the reliability as a semiconductor element storage package is further improved.

Further, according to the package for housing a semiconductor element of the present invention, the glass and / or
Or 0.1 a Zr compound in terms of ZrO ₂ in the filler
By containing 30% by weight, the chemical resistance of the glass ceramic sintered body can be greatly improved, and as a result,
When depositing a plating layer of nickel, gold, etc. on a metallized wiring layer provided on an insulating substrate, even if the insulating substrate is immersed in a chemical solution such as acidic or alkaline, oxidation, corrosion, etc. hardly occur on the insulating substrate, The reliability as a package for housing a semiconductor element can be made high.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is an insulating base, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating substrate 1 has a semiconductor element 3 on its upper surface.
The semiconductor element 3 is placed on the bottom surface of the concave portion 1a, and is fixedly adhered thereto via an adhesive such as glass, resin, brazing material, or the like.

The insulating substrate 1 is composed of 20 to 80% by volume of glass containing 5 to 60% by weight of BaO and 40 to 400 ° C.
And a filler having a thermal expansion coefficient of not less than 6 ppm / ° C. in the glass ceramic and / or filler containing 0.1 to 30% by weight in terms of ZrO _{2 in the} glass and / or filler. For example, a slurry is formed by adding an appropriate organic binder, a solvent, and the like to raw material powder such as a BaO-containing glass, a filler, and a Zr compound to form a slurry, and the slurry is subjected to a doctor blade method or a calendar. By forming a green sheet (raw sheet) by adopting the roll method, a suitable punching process is performed on the green sheet, and a plurality of the green sheets are laminated and fired at a temperature of about 850 to 1300 ° C. Be produced.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the outer peripheral edge thereof. Each electrode of the semiconductor element 3 is formed around the concave portion 1a of the metallized wiring layer 5. An external lead terminal 7 electrically connected via a bonding wire 6 and connected to an external electric circuit at a portion led out to the outer peripheral edge of the upper surface of the insulating base 1 has a brazing material such as a low melting point brazing material. Brazed and attached.

The metallized wiring layer 5 functions as a conductive path for connecting each electrode of the semiconductor element 3 to an external electric circuit, and is formed of a metal material such as copper, silver, nickel, and palladium.

The metallized wiring layer 5 is prepared by screen-printing a metal paste obtained by adding a suitable organic binder, a solvent and the like to a metal powder of copper, silver, nickel or the like onto a green sheet serving as the insulating substrate 1 in advance. By printing and applying a predetermined pattern by a method, the insulating substrate 1 is formed so as to adhere from the periphery to the outer peripheral edge of the concave portion 1a.

On the exposed surface of the metallized wiring layer 5, a metal having excellent corrosion resistance, such as nickel and gold, and excellent wettability with a brazing material is applied to a thickness of 1 μm to 20 μm by plating. Thus, the oxidation corrosion of the metallized wiring layer 5 can be effectively prevented, and the brazing of the external lead terminals 7 to the metallized wiring layer 5 can be strengthened. Therefore, the metallized wiring layer 5
It is preferable that a metal having excellent corrosion resistance, such as nickel and gold, and having excellent wettability with a brazing material is applied to the exposed surface to a thickness of 1 μm to 20 μm.

If the metallized wiring layer 5 is made of a metal having a low electric resistance such as copper or silver, the electric signal propagating through the metallized wiring layer 5 will not be attenuated.
An electric signal can be input reliably and accurately.
Therefore, it is preferable that the metallized wiring layer 5 is formed of a metal having a low electric resistance such as copper or silver.

Further, external lead terminals 7 are brazed and attached to the metallized wiring layer 5 through a brazing material.
The semiconductor element 3 housed inside the container 4 by connecting the external lead terminals 7 to the external electric circuit is electrically connected to the external electric circuit, thereby forming the metallized wiring layer 5 and the external lead terminals 7. To the external electric circuit via the.

The external lead terminal 7 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, an ingot made of a metal such as an iron-nickel-cobalt alloy is formed into a predetermined shape by applying a conventionally known metal working method such as a rolling method or a punching method.

The lid 2 is provided with a concave portion 1a of the insulating base 1.
And a semiconductor element is accommodated in the concave portion 1a, and is then attached to the upper surface of the insulating base 1 so as to close the concave portion 1a, so that the inside of the container comprising the insulating base 1 and the lid 2 is formed. The semiconductor element 3 is housed in an airtight manner so that the semiconductor element 3 operates stably and normally for a long period of time.

The cover 2 made of copper or a metal material containing copper as a main component is obtained by subjecting a metal material containing copper or copper as a main component to a conventionally known metal working method such as a rolling method or a punching method. Thereby, it is formed in a predetermined shape such as a plate shape.

Thus, according to the above-described package for accommodating a semiconductor element, the semiconductor element 3
Is bonded and fixed via an adhesive made of glass, resin, brazing material or the like, and each electrode of the semiconductor element 3 is connected to a predetermined metallized wiring layer 5 via a bonding wire 6. The lid 2 is joined to the upper surface of the device via a sealing material made of glass, resin, brazing material, or the like,
A semiconductor device as a product is obtained by hermetically housing the semiconductor element 3 inside a container 4 including the insulating base 1 and the lid 2.

In the present invention, the insulating substrate 1 is made of glass 20 containing 5 to 60% by weight of barium oxide (BaO).
And 80 to 20% by volume of a filler having a coefficient of thermal expansion at 40 to 400 ° C. of 6 ppm / ° C. or more, and a Zr compound in the barium oxide-containing glass and / or filler in terms of ZrO ₂ . It is important to form a glass ceramic sintered body containing 0.1 to 30% by weight.

When the insulating substrate 1 is formed of the above-mentioned sintered glass ceramic, the coefficient of thermal expansion of the insulating substrate 1 at 40 to 400 ° C. becomes 8.5 to 18.5 ppm / ° C., and copper or copper is the main component. Is approximated to the thermal expansion coefficient (copper: 17 ppm / ° C.) of the lid 2 made of a metal, and as a result, heat or the like generated when the semiconductor element 3 is operated is applied to each of the insulating base 1 and the lid 2. However, no large thermal stress is generated between the insulating base 1 and the lid 2, thereby effectively removing the lid 2 from the insulating base 1 and generating cracks and cracks in the insulating base 1. As a result, the semiconductor element 3 inside the container 4 can be securely hermetically sealed, and the semiconductor element 3 can be operated stably and normally for a long time.

The reason why the glass containing 5 to 60% by weight of barium oxide (BaO) is used for the glass ceramic sintered body constituting the insulating substrate 1 is that the glass containing barium oxide has a low softening point and is relatively high. Since it has a thermal expansion coefficient, the amount of glass is small, and it is possible to add a large amount of filler having high thermal expansion, and the thermal expansion coefficient of the lid 2 made of copper or a metal material containing copper as a main component is reduced. This is because a glass-ceramic sintered body having a similar high coefficient of thermal expansion can be easily obtained, and the amount of barium oxide is set in the range of 5 to 60% by weight. This is because if it is more than 60% by weight, vitrification is difficult, the characteristics are likely to be unstable, and the chemical resistance is significantly reduced. In particular, the amount of barium oxide is 2
0 to 40% by weight is desirable.

As the barium oxide-containing glass, for example, SiO ₂ —BaO—B ₂ O ₃ —Al ₂ O ₃ —CaO SiO ₂ —BaO—B ₂ O ₃ —Al ₂ O ₃ —TiO ₂ —SrO SiO ₂ —BaO—B ₂ O ₃ —CaO—Al ₂ O ₃ —MgO
A composition such as —ZrO ₂ SiO ₂ —BaO—B ₂ O ₃ —CaO—Al ₂ O ₃ —MgO is also preferably used.

Since such a barium oxide-containing glass has a low Young's modulus of 50 to 80 GPa, the insulating substrate 1 made of a glass ceramic sintered body also has a Young's modulus of about 50 to 80 GPa, which is easily deformable. It has become. Therefore, even if a slight thermal stress is generated between the insulating base 1 and the lid 2 due to a difference in thermal expansion coefficient between the insulating base 1 and the lid 2, the thermal stress can be effectively reduced by appropriately deforming the insulating base 1. Absorption and relaxation are effectively prevented from generating cracks and cracks in the insulating substrate 1, and the reliability as a semiconductor element storage package is further improved.

The sag point of the barium oxide-containing glass is preferably from 400 to 800 ° C., particularly preferably from 400 to 700 ° C. This is because when a mixture of barium oxide-containing glass and a filler is formed, a molding binder such as an organic resin is added, and the binder is efficiently removed and the metallized wiring layer 5 baked simultaneously with the insulating substrate 1 is formed. It is necessary to match the firing conditions of the above. If the yield point is lower than 400 ° C., the glass starts sintering at a low temperature. For example, silver (Ag),
Simultaneous firing with the metallized wiring layer 5 having a sintering start temperature of 600 to 800 ° C. such as copper (Cu) cannot be performed, and the densification of the molded body starts at a low temperature. This is because the residual characteristics are adversely affected. If the yield point is higher than 800 ° C., sintering becomes difficult unless the amount of glass is increased, so that a large amount of expensive glass is required, which increases the cost of the sintered body.

On the other hand, as a filler to be combined with the glass, a thermal expansion coefficient at 40 to 400 ° C. is used in order to approximate the thermal expansion coefficient of the glass ceramic sintered body to the lid 2 made of copper or a metal material containing copper as a main component. The coefficient is 6 ppm /
It is important to keep the temperature above ° C. Unless a filler having a thermal expansion coefficient of 6 ppm / ° C. or more is contained, the thermal expansion coefficient of the glass ceramic sintered body cannot be increased to 8.5 ppm / ° C. or more.

Such a coefficient of thermal expansion is not less than 6 ppm / ° C.
Cristobalite (SiO 2)_Two),
Quartz (SiO_Two), Tridymite (SiO_Two), Pho
Lusterite (2MgO ・ SiO_Two), Spinel (2M
gO · Al_TwoO_Three), Wollastonite (CaO.Si)
O_Two), Monticellanite (CaO.MgO.Si)
O_Two), Nepheline (Na_TwoO ・ Al_TwoO_Three・ SiO_Two),
Diopsite (CaO ・ MgO ・ 2SiO_Two), Melby
Knight (3CaO.MgO.2SiO)_Two), Akermai
(2CaO.MgO.2SiO)_Two), Magnesia (M
gO), alumina (Al_TwoO _Three), Carnegieite (Na
_TwoO ・ Al_TwoO_Three・ 2SiO_Two), Enstatite (MgO)
・ SiO_Two), Magnesium borate (MgOB
_TwoO_Three), Celsian (BaO.Al)_TwoO_Three・ 2Si
O_Two), B_TwoO_Three・ 2MgO ・ 2SiO_Two, Garnite (Z
nO · Al_TwoO_Three) At least one selected from the group
Is mentioned. Among them, Cristobalite, C
SiO such as oats and tridymite_TwoSystem material and forster
One selected from the group of light and enstatite has high thermal expansion
This is desirable for tensioning.

The glass and filler are mixed at an appropriate ratio depending on the purpose such as the firing temperature and the thermal expansion characteristics of the finally obtained glass ceramic sintered body. The barium oxide-containing glass has a shrinkage onset temperature of 700 ° C. or lower when no filler is added, and melts at 850 ° C. or higher, so that the metallized wiring layer 5 and the like cannot be provided. However, by mixing the filler, crystals are precipitated in the firing process, and a liquid phase for liquid phase sintering of the filler can be formed at an appropriate temperature. Also, since the shrinkage start temperature of the entire molded body can be increased,
By adjusting the content of the filler, the metallized wiring layer 5 is formed.
And the simultaneous firing conditions can be matched.

The ratio of the barium oxide-containing glass and the filler in the glass ceramic sintered body is 20 to 80% by volume for the barium oxide-containing glass and 80 to 20% by volume for the filler.
Is specified. The reason why the amounts of the barium oxide-containing glass and the filler are within the above ranges is that the amount of the barium oxide-containing glass is less than 20% by volume.
If the content is more than 0% by volume, liquid phase sintering cannot be performed and firing must be performed at a high temperature. In this case, for example, the metallized wiring layer 5 containing copper as a main component is co-fired with the insulating base 1 to form the insulating base 1. There is a danger that it will not be possible to form a coating at a predetermined position, and the barium oxide-containing glass
More than 0% by volume, in other words, 20% by volume of filler
If the amount is smaller than this, the sintering start temperature of the glass ceramic sintered body is lowered, and there is a risk that simultaneous firing with the metallized wiring layer 5 cannot be performed.

It is desirable that the amount of the filler is appropriately adjusted according to the yield point of barium oxide. That is, when the yield point of the glass is as low as 400 to 700 ° C., the sinterability at a low temperature is enhanced, so that the content of the filler is 4%.
A relatively large amount of 0 to 80% by volume can be blended. On the other hand, when the yield point of the glass is as high as 700 to 800 ° C., the sinterability is reduced. Therefore, the content of the filler is desirably relatively low, that is, 20 to 50% by volume.

Further, in the above-mentioned glass ceramic sintered body, a zirconium compound (Zr compound) is contained in the filler and / or the glass in a ratio of 0.1 to 30% by weight in terms of zirconium oxide (ZrO ₂ ). This is very important.

The content of the Zr compound is to enhance the oxidation resistance of the glass ceramic sintered body. A plating pretreatment liquid for applying a plating layer of nickel, gold, or the like to the exposed surface of the metallized wiring layer 5 is provided. Even if the insulating substrate 1 comes into contact with an acidic or alkaline solution such as a plating solution, the insulating substrate 1 can be effectively prevented from being oxidized and corroded, thereby ensuring the reliability of the package for accommodating the semiconductor element. Can be.

As the Zr compound, for example, ZrO
_{2, ZrSiO 2, CaO · ZrO} 2, ZrB 2, ZrP 2
At least one selected from the group consisting of O ₇ and ZrB is exemplified.

This Zr compound is used as a compound powder as a filler.
Mix as one of the ingredients. In this case, Zr at the time of addition
Compounds, especially ZrO_TwoOf BET specific surface area
The chemical resistance of sintered ceramics tends to change,
BET specific surface area is 25m^Two/ G or more
And BET specific surface area is 25m^TwoLess than / g
The effect of improving the quality tends to be small. Also other formulations
As a form, barium oxide (Ba) is used as glass powder.
O), zirconium oxide (ZrO) _Two)
Glass containing glass may be used.

When the amount of the Zr compound added to the barium oxide-containing glass and / or the filler is less than 0.1% by weight in terms of ZrO ₂ , the effect of improving the chemical resistance of the glass ceramic sintered body is reduced. As a result, the insulating substrate 1 is oxidized and corroded by a plating solution such as nickel or gold, or a plating pretreatment solution such as hydrofluoric acid, etc., resulting in poor appearance and deterioration of the adhesion strength of the metallized wiring layer 5. If it exceeds 10% by weight, the thermal expansion coefficient of the glass ceramic sintered body is 8.5 pp.
m / ° C., the difference in the thermal expansion coefficient between the insulating base 1 and the lid 2 increases, and the thermal stress generated due to the difference in the thermal expansion coefficient causes the insulating base 1 to have a short-term mechanical Such a destruction may occur, or the lid 2 may be separated from the insulating substrate 1. Therefore, the amount of the Zr compound added to the barium oxide-containing glass and / or filler is 0.1 to 3 in terms of ZrO _2.
It is specified in the range of 0% by weight, and the range of 0.2 to 10% by weight is even more preferable.

The glass-ceramic sintered body is composed of barium oxide-containing glass, filler, Zr
To the compound, after adding an organic resin binder of a suitable molding, doctor blade method and rolling method, by molding means such as a mold pressing method, molded into an arbitrary shape, for example, a sheet,
Thereafter, it is manufactured by firing.

The metallized wiring layer 5 is applied to the insulating substrate 1 made of the glass ceramic sintered body by applying a metal powder such as copper (Cu) or silver (Ag) to the sheet-like molded body. This is performed by printing and applying a metal paste obtained by adding and mixing an organic binder, a plasticizer, and a solvent in a predetermined pattern by a screen printing method in advance.

Further, in firing, first, the organic resin binder added for molding is removed. The removal of the organic resin binder is performed in an air atmosphere at about 700 ° C. However, when a metal containing copper as a main component is used as the metallized wiring layer 5, the metallized wiring layer 5 contains water vapor containing 100 to 70%.
This is performed in a nitrogen atmosphere at 0 ° C.

The sintering is performed in an oxidizing atmosphere at 850 ° C. to 1300 ° C., whereby the relative density is increased to 90% or more. If the firing temperature at this time is lower than 850 ° C., densification cannot be achieved, and if it exceeds 1300 ° C., the metallized wiring layer 5 is melted by simultaneous firing of the metallized wiring layer 5. However, when a metal containing copper as a main component is used as the metallized wiring layer 5, the metallization wiring layer 5 is formed in a non-oxidizing atmosphere at 850 to 1050C.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, as shown in FIG.
Insulating base 1 from the bottom of concave portion 11a in which a semiconductor element is accommodated
A metallized wiring layer 15 is formed over the lower surface of the semiconductor substrate 13, and an electrode of the semiconductor element 13 is connected to a portion of the metallized wiring layer 15 exposed on the bottom surface of the concave portion 1 a via a metal bump 16 such as a gold bump. An external connection terminal such as a solder ball 17 is connected to the exposed portion,
By filling the resin layer 18 between the lid 12 and the semiconductor element 13, the semiconductor element 13 can also be applied to a semiconductor element housing package having a structure in which the semiconductor element 13 is airtightly housed.

Also in this case, the insulating substrate 11 is
20 to 80% by volume of glass containing 60 to 60% by weight;
Thermal expansion coefficient at to 400 ° C. consists filler 80-20% by volume and is 6 ppm / ° C. or more, 0 Zr compound in terms of ZrO ₂ in the glass and / or filler.
If it is formed of a glass ceramic sintered body containing 1 to 30% by weight, the thermal expansion coefficient of the insulating base 11 is close to the thermal expansion coefficient of the lid 12 made of copper or a metal material containing copper as a main component. Even if heat or the like generated when the semiconductor element 13 operates is applied to each of the insulating base 11 and the lid 12,
No large thermal stress is generated between the insulating base 11 and the lid 12, so that the insulating base 11 of the lid 12
And the occurrence of cracks and cracks in the insulating substrate 11 can be effectively prevented, and the semiconductor element 13 inside the container can be hermetically sealed for a long period of time.
3 can be operated stably and normally.

[0048]

According to the package for housing a semiconductor element of the present invention, since the lid is formed of copper or a metal containing copper as a main component and copper has almost no magnetism, the lid is magnetized by an external magnetic field. The occurrence of noise due to the high density of the magnetic flux is effectively prevented, and as a result, the semiconductor element can always be operated normally and stably.

According to the semiconductor device housing package of the present invention, the insulating base of the container housing the semiconductor device is made of glass 20-8 containing BaO of 5-60% by weight.
0% by volume and a thermal expansion coefficient of 6p at 40 to 400 ° C.
pm / ° C. or higher, and 80 to 20% by volume of a filler.
Since it is formed of a glass ceramic sintered body containing 0.1 to 30% by weight in terms of rO ₂ , the insulating substrate has a thickness of 40 to 4%.
The thermal expansion coefficient at 00 ° C. is 8.5 to 18.5 ppm /
The temperature can be approximated to the thermal expansion coefficient (copper: 17 ppm / ° C.) of a lid made of copper or a metal containing copper as a main component. As a result, semiconductor elements are generated on the insulating base and the lid during operation. Even if heat or the like is applied, no large thermal stress is generated between the insulating base and the lid,
This effectively prevents the lid from peeling off from the insulating base due to the thermal stress, and the occurrence of cracks, cracks, and the like in the insulating base, and reliably hermetically seals the semiconductor element inside the container for a long time. Thus, the semiconductor element can be more reliably stably and normally operated.

At the same time, in the glass ceramic sintered body, the Young's modulus of the glass containing 5 to 60% by weight of BaO is as low as 50 to 80 GPa, and the Young's modulus of the insulating substrate is as low as about 50 to 80 GPa. I have. Therefore, even if a slight thermal stress is generated between the insulating base and the lid due to a difference in thermal expansion coefficient between the two, the thermal stress is effectively absorbed and relaxed by appropriately deforming the insulating base. As a result, the occurrence of cracks, cracks, and the like in the insulating base is effectively prevented, and the reliability as a semiconductor element storage package is further improved.

Further, according to the package for accommodating a semiconductor element of the present invention, the glass and / or
Or 0.1 a Zr compound in terms of ZrO ₂ in the filler
By containing 30% by weight, the chemical resistance of the glass ceramic sintered body can be greatly improved, and as a result,
When depositing a plating layer of nickel, gold, etc. on a metallized wiring layer provided on an insulating substrate, even if the insulating substrate is immersed in a chemical solution such as acidic or alkaline, oxidation, corrosion, etc. hardly occur on the insulating substrate, The reliability as a package for housing a semiconductor element can be made high.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing one embodiment of the present invention.

FIG. 2 is a schematic sectional view of another embodiment of the present invention.

[Explanation of symbols]

 1, 11 ... insulating base 2, 12 ... lid 3, 13 ... semiconductor element 4 ... container 5, 15 ... metallized wiring layer 6 ... bonding wire 7 ... External lead terminals 16 Metal bumps 17 Solder balls 18 Resin layer

Claims (1)

[Claims] 1. A semiconductor device comprising: an insulating base; a lid;
Semiconductor element storage pad having a space for storing elements
The lid is formed of copper or a metal containing copper as a main component.
And the insulating substrate contains 5 to 60% by weight of BaO.
20-80% by volume of glass to be heated and at 40-400 ° C
Filler having a thermal expansion coefficient of at least 6 ppm / ° C.
20% by volume and the glass and / or filler
Zr compound in ZrO _Two0.1 to 30% by weight conversion
Being formed of a glass ceramic sintered body
And a package for housing a semiconductor element.