JPH04266051A - Preparation of housing package for semiconductor device - Google Patents
Preparation of housing package for semiconductor deviceInfo
- Publication number
- JPH04266051A JPH04266051A JP3049073A JP4907391A JPH04266051A JP H04266051 A JPH04266051 A JP H04266051A JP 3049073 A JP3049073 A JP 3049073A JP 4907391 A JP4907391 A JP 4907391A JP H04266051 A JPH04266051 A JP H04266051A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- resin adhesive
- package
- semi
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000853 adhesive Substances 0.000 claims abstract description 56
- 230000001070 adhesive effect Effects 0.000 claims abstract description 56
- 229920005989 resin Polymers 0.000 claims abstract description 50
- 239000011347 resin Substances 0.000 claims abstract description 50
- 239000007788 liquid Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 15
- 238000007789 sealing Methods 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229920000768 polyamine Polymers 0.000 description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はメモリー用の半導体素子
やビデオカメラ等に使用される固体撮像素子などを収容
するための半導体素子収納用パッケージの製造方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a package for accommodating semiconductor elements for accommodating semiconductor elements for memory, solid-state imaging elements used in video cameras, and the like.
【０００２】0002
【従来技術及びその課題】従来、メモリー用の半導体素
子や固体撮像素子を収容するための半導体素子収納用パ
ッケージはアルミナセラミックス等の電気絶縁材料から
成り、その上面の略中央部に固体撮像素子を収容するた
めの凹部及び該凹部周辺から側面にかけて導出されたタ
ングステン（Ｗ） 、モリブデン（Ｍｏ）等の高融点金
属粉末から成るメタライズ配線層を有する絶縁基体と、
半導体素子を外部電気回路に電気的に接続するために前
記メタライズ配線層に銀ロウ等のロウ材を介し取着され
た多数の外部リード端子と、蓋体とから構成されており
、絶縁基体の凹部底面に半導体素子を接着材を介して接
着固定するとともに該半導体素子の各電極をボンディン
グワイヤを介してメタライズ配線層に接続させ、しかる
後、絶縁基体の上部に蓋体を封止材により取着接合し、
半導体素子を内部に気密に封止することによって半導体
装置となる。[Prior Art and its Problems] Conventionally, a semiconductor device storage package for accommodating a semiconductor device for memory or a solid-state image pickup device is made of an electrically insulating material such as alumina ceramics, and the solid-state image pickup device is placed approximately in the center of the top surface. an insulating base having a recess for accommodating the recess and a metallized wiring layer made of high melting point metal powder such as tungsten (W) or molybdenum (Mo) drawn out from the periphery of the recess to the side surface;
It consists of a large number of external lead terminals attached to the metallized wiring layer through a brazing material such as silver solder in order to electrically connect the semiconductor element to an external electric circuit, and a lid body. A semiconductor element is adhesively fixed to the bottom of the recess via an adhesive, and each electrode of the semiconductor element is connected to the metallized wiring layer via a bonding wire, and then a lid is attached to the top of the insulating base using a sealant. Wear and join,
A semiconductor device is obtained by hermetically sealing a semiconductor element inside.
【０００３】しかしながら、この従来の半導体素子収納
用パッケージは通常、絶縁基体が複数枚のセラミックグ
リーンシート（セラミック生シート）を上下に積層する
とともに該積層したものを高温で焼成し各々を焼結一体
化させる、所謂、ラミネート方式によって製作さており
、１個の絶縁基体を得るのに工程が多く、作業が煩雑で
絶縁基体を高価なものとしてしまう欠点を有していた。However, in this conventional package for storing semiconductor elements, the insulating base is usually made by laminating a plurality of ceramic green sheets (ceramic green sheets) one above the other, and then firing the laminated sheets at high temperature to sinter each one into one piece. The insulating substrate is produced by a so-called lamination method, which involves many steps to obtain one insulating substrate, which is complicated and makes the insulating substrate expensive.
【０００４】そこで上記欠点を解消するために枠体の上
下面に半導体素子が載置される絶縁基体と蓋体とを樹脂
接着材により接着した半導体素子収納用パッケージが検
討されており、半導体素子が取着された単純形状の絶縁
基体と蓋体との間に、上下両面に予め半硬化状態の樹脂
接着材を被着させた枠体を配するとともに該半硬化状態
の樹脂を加熱し、完全に硬化させることによって絶縁基
体と蓋体を枠体に接着し内部に半導体素子を気密に封止
するようになっている。In order to eliminate the above-mentioned drawbacks, a package for storing semiconductor elements is being considered in which an insulating base on which semiconductor elements are placed on the upper and lower surfaces of a frame and a lid are bonded together using a resin adhesive. A frame with a semi-cured resin adhesive coated on both upper and lower surfaces is disposed between the simple-shaped insulating base to which is attached and the lid, and the semi-cured resin is heated; By completely curing, the insulating base and the lid are bonded to the frame, and the semiconductor element is hermetically sealed inside.
【０００５】尚、かかる半導体素子収納用パッケージに
よれば絶縁基体を極めて単純な形状として作業が簡単な
プレス成形法により製作することができ、絶縁基体を極
めて安価なものとなすことができる。[0005] According to such a semiconductor element storage package, the insulating base can be manufactured in an extremely simple shape by a press molding method that is easy to work with, and the insulating base can be made extremely inexpensive.
【０００６】また前記枠体の上下両面に予め被着させて
おく樹脂接着材は液状のままではその取扱が極めて面倒
であることから半硬化状態になされており、具体的には
枠体の一方の面に液状の樹脂接着材を塗布するとともに
これを加熱して半硬化状態となし、次に前記枠体の他の
面に同じく液状の樹脂接着材を塗布するとともに加熱し
て半硬化状態となすことによって枠体の上下両面に被着
される。[0006] Furthermore, since the resin adhesive applied in advance to both the upper and lower surfaces of the frame is extremely troublesome to handle in its liquid state, it is kept in a semi-hardened state. A liquid resin adhesive is applied to the other side of the frame and heated to bring it into a semi-hardened state, and then a liquid resin adhesive is applied to the other side of the frame and heated to bring it into a semi-hardened state. By doing so, it can be applied to both the top and bottom of the frame.
【０００７】しかしながら、この半導体素子収納用パッ
ケージにおいては枠体の一方の面に被着された樹脂接着
材に半硬化状態にするための熱が二度印加されることに
なるためその熱硬化が進み過ぎてしまい、その結果、該
樹脂接着材を介して枠体に絶縁基体或いは蓋体を強固に
接着することができず、パッケージ内部の気密封止の信
頼性が低いものとなる欠点を有していた。However, in this package for storing semiconductor elements, heat is applied twice to the resin adhesive adhered to one side of the frame to bring it into a semi-cured state, so that the heat curing is difficult. As a result, the insulating base or the lid cannot be firmly bonded to the frame via the resin adhesive, and the reliability of the hermetic seal inside the package becomes low. Was.
【０００８】[0008]
【課題を解決するための手段】本発明の半導体素子収納
用パッケージの製造方法は枠体の上下面に樹脂接着材を
介して半導体素子が取着される載置部を有する絶縁基体
と蓋体とを接着して成る半導体素子収納用パッケージで
あって、前記枠体に絶縁基体と蓋体とを接着する樹脂接
着材が下記（１） 乃至（３） の工程により予め枠体
の上下面に半硬化状態で被着されていることを特徴とす
るものである。
（１）枠体の一方の面に硬化速度が遅い液状の樹脂接着
材を塗布し、これを加熱して初期の半硬化状態にする工
程
（２）枠体の他方の面に硬化速度が短い液状の樹脂接着
材を塗布する工程
（３）枠体の上下面に塗布した各々の樹脂接着材を加熱
し、上下面の樹脂接着材を実質的に同一の半硬化状態と
なす工程[Means for Solving the Problems] A method of manufacturing a package for storing semiconductor elements according to the present invention includes an insulating base body having a mounting portion on the upper and lower surfaces of a frame body on which a semiconductor element is attached via a resin adhesive, and a lid body. A package for housing a semiconductor device, which is made by bonding an insulating base and a lid to the frame, and the resin adhesive for bonding the insulating base and the lid to the frame is preliminarily applied to the upper and lower surfaces of the frame by the steps (1) to (3) below. It is characterized by being applied in a semi-cured state. (1) Applying a liquid resin adhesive with a slow curing speed to one side of the frame and heating it to bring it to an initial semi-cured state (2) Applying a liquid resin adhesive with a slow curing speed to the other side of the frame Step of applying liquid resin adhesive (3) Step of heating each resin adhesive applied to the upper and lower surfaces of the frame to bring the resin adhesives on the upper and lower surfaces to substantially the same semi-cured state
【０００９】[0009]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図１は本発明の製造方法によって製作された半導体
素子収納用パッケージを固体撮像素子を収容するのに使
用した場合の例を示し、１は絶縁基体、２は枠体、３は
透光性の蓋体である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained in detail with reference to the accompanying drawings. FIG. 1 shows an example of a semiconductor device housing package produced by the manufacturing method of the present invention used to house a solid-state image sensor, in which 1 is an insulating base, 2 is a frame, and 3 is a transparent base. It is the lid body.
【００１０】前記絶縁基体１はアルミナセラミックス等
の電気絶縁材料から成り、その上面中央部に固体撮像素
子４が取着される載置部Ａを有し、該載置部Ａに固体撮
像素子４が有機樹脂等の接着材を介して取着固定される
。The insulating substrate 1 is made of an electrically insulating material such as alumina ceramics, and has a mounting portion A in the center of its upper surface on which the solid-state image sensor 4 is attached. is attached and fixed via an adhesive such as organic resin.
【００１１】前記絶縁基体１は、例えばアルミナ（Ａｌ
２ Ｏ ３ ） 、シリカ（ＳｉＯ２ ） 、マグネシ
ア（ＭｇＯ） 、カルシア（ＣａＯ） 等の原料粉末に
適当な有機溶剤、溶媒を添加混合し、しかる後、これを
従来周知のプレス成形法により板状に成形するとともに
該板状成形体を高温（ 約１６００℃） で焼成するこ
とによって得られる。The insulating substrate 1 is made of, for example, alumina (Al
2O3), silica (SiO2), magnesia (MgO), calcia (CaO), etc., an appropriate organic solvent or solvent is added and mixed, and then this is formed into a plate shape by a conventionally well-known press molding method. It is obtained by molding and firing the plate-shaped molded product at a high temperature (about 1600°C).
【００１２】尚、前記絶縁基体１は極めて単純な形状で
あり、従来周知のプレス成形法を採用することによって
簡単に形成することができるため絶縁基体１を極めて安
価となすことが可能となる。[0012] The insulating base 1 has an extremely simple shape and can be easily formed by employing a conventionally well-known press molding method, so that the insulating base 1 can be made extremely inexpensive.
【００１３】前記絶縁基体１ はまたその上面から側面
を介し底面にかけて複数個のメタライズ配線層５ が被
着形成されており、該メタライズ配線層５ の絶縁基体
１ 上面部には固体撮像素子４ の各電極がボンディン
グワイヤ６ を介し接続され、またメタライズ配線層５
の絶縁基体１ 底面部には外部電気回路と接続される
外部リード端子７ が銀ロウ等のロウ材を介して取着さ
れている。The insulating substrate 1 also has a plurality of metallized wiring layers 5 deposited from the top surface to the bottom surface through the side surfaces, and a solid-state image sensor 4 is formed on the top surface of the insulating substrate 1 of the metallized wiring layer 5. Each electrode is connected via a bonding wire 6, and a metallized wiring layer 5
An external lead terminal 7 to be connected to an external electric circuit is attached to the bottom surface of the insulating base 1 through a brazing material such as silver solder.
【００１４】前記メタライズ配線層５ はタングステン
、モリブデン、マンガン等の高融点金属粉末から成り、
該タングステン等の金属粉末に適当な有機溶剤、溶媒を
添加混合して得た金属ペーストを絶縁基体１ の上面か
ら底面にかけて従来周知のスクリーン印刷法により印刷
塗布するとともにこれを焼き付けることによって絶縁基
体１ の上面から側面を介し底面にかけて被着形成され
る。The metallized wiring layer 5 is made of high melting point metal powder such as tungsten, molybdenum, manganese, etc.
A metal paste obtained by adding and mixing a suitable organic solvent or solvent to the metal powder such as tungsten is printed and coated from the top surface to the bottom surface of the insulating substrate 1 by a conventionally well-known screen printing method, and this is baked to form the insulating substrate 1. The coating is formed from the top surface to the bottom surface through the side surfaces.
【００１５】また前記メタライズ配線層５ の絶縁基体
１ 底面部に取着される外部リード端子７ はコバール
（Ｆｅ−Ｎｉ−Ｃｏ 合金） や４２Ａｌｌｏｙ（Ｆｅ
−Ｎｉ 合金） 等の金属から成り、従来周知の金属加
工法を採用し、コバールや４２Ａｌｌｏｙ 等のインゴ
ット（ 塊） を所定の板状に形成することよって製作
される。The external lead terminals 7 attached to the bottom surface of the insulating substrate 1 of the metallized wiring layer 5 are made of Kovar (Fe-Ni-Co alloy) or 42Alloy (Fe
-Ni alloy), etc., and is manufactured by forming an ingot (lump) of Kovar, 42 Alloy, etc. into a predetermined plate shape using conventionally well-known metal processing methods.
【００１６】尚、前記メタライズ配線層５ 及び外部リ
ード端子７ はその露出する外表面にニッケル、金等の
耐蝕性に優れ、且つ良導電性の金属をメッキにより１．
０ 乃至２０．０μｍ の厚みに層着させておくとメタ
ライズ配線層５ 及び外部リード端子７ の酸化腐食が
有効に防止されるとともにメタライズ配線層５ へのボ
ンディングワイヤ６ の接合及び外部リード端子７ の
外部電気回路への電気的接続が極めて良好となる。従っ
て、メタライズ配線層５ 及び外部リード端子７ はそ
の露出する外表面にニッケル、金等の耐蝕性に優れ、且
つ良導電性の金属をメッキにより１．０ 乃至２０．０
μｍ の厚みに層着させておくことが好ましい。The metallized wiring layer 5 and the external lead terminals 7 are formed by plating a highly corrosion-resistant and highly conductive metal such as nickel or gold on their exposed outer surfaces.
If the layer is deposited to a thickness of 0 to 20.0 μm, oxidation corrosion of the metallized wiring layer 5 and the external lead terminal 7 can be effectively prevented, and bonding of the bonding wire 6 to the metallized wiring layer 5 and the external lead terminal 7 can be prevented. The electrical connection to the external electrical circuit is extremely good. Therefore, the metallized wiring layer 5 and the external lead terminal 7 are plated with a highly corrosion-resistant and highly conductive metal such as nickel or gold on their exposed outer surfaces to a thickness of 1.0 to 20.0.
It is preferable to form a layer with a thickness of μm.
【００１７】また前記絶縁基体１ はその上面外周部に
枠体２ が接着材８ を介して、且つ固体撮像素子載置
部Ａを囲繞するようにして接着されており、該枠体２
は透光性蓋体３ を絶縁基体１ より所定の間隔をもっ
て固定するための支持部材として作用する。Further, a frame 2 is bonded to the outer circumferential portion of the upper surface of the insulating substrate 1 through an adhesive 8 so as to surround the solid-state image sensor mounting portion A.
acts as a support member for fixing the transparent lid 3 at a predetermined distance from the insulating base 1 .
【００１８】前記枠体２ を絶縁基体１ に接着する樹
脂接着材８ は、例えばエポキシ樹脂から成り、枠体２
の下面に予め半硬化状態で被着させておくことによっ
てその取扱を容易なものとなしてある。The resin adhesive 8 for bonding the frame 2 to the insulating base 1 is made of, for example, epoxy resin, and
It is made easy to handle by applying it in a semi-hardened state to the lower surface of the holder in advance.
【００１９】前記枠体２ はまたその上部に透光性の蓋
体３ が樹脂接着材９ を介して取着され、これによっ
てパッケージ内部が気密に封止される。A translucent lid 3 is attached to the upper part of the frame 2 via a resin adhesive 9, thereby airtightly sealing the inside of the package.
【００２０】前記枠体２ の上面に透光性蓋体３ を接
着する樹脂接着材９ は、例えばエポキシ樹脂から成り
、枠体２ の上面に予め半硬化状態で被着させておくこ
とによってその取扱を容易なものとなしてある。The resin adhesive 9 for bonding the translucent lid 3 to the upper surface of the frame 2 is made of, for example, epoxy resin, and is applied to the upper surface of the frame 2 in a semi-hardened state in advance. It is designed to be easy to handle.
【００２１】また前記透光性蓋体２ はサファイヤやガ
ラス等の光を透過し得る透光性の材料より成り、レンズ
部材（ 不図示） で縮小された像をパッケージの内部
に収容した固体撮像素子４ 上に入射結像させる作用を
為す。The light-transmitting lid 2 is made of a light-transmitting material such as sapphire or glass, and is a solid-state imaging device in which an image reduced by a lens member (not shown) is housed inside the package. Element 4 functions to form an incident image on the element.
【００２２】尚、前記透光性蓋体３ は、例えばガラス
から成る場合、シリカ（ＳｉＯ２ ） 、アルミナ（Ａ
ｌ ２ Ｏ ３ ） 、カルシア（ＣａＯ） 、酸化バ
リウム（ＢａＯ） 等のガラス成分粉末を従来周知のプ
レス成形法を採用することによって平板状に成形すると
ともにこれを約１２００℃の温度で加熱処理することに
よって形成される。[0022] When the translucent lid 3 is made of glass, for example, silica (SiO2), alumina (A
Glass component powders such as l 2 O 3 ), calcia (CaO), and barium oxide (BaO) are formed into a flat plate using a conventionally well-known press molding method, and this is then heat-treated at a temperature of about 1200°C. formed by
【００２３】かくして本発明の半導体素子収納用パッケ
ージによれば、絶縁基体１ の固体撮像素子載置部Ａ上
に固体撮像素子４を取着するとともに該固体撮像素子４
の各電極をメタライズ配線層５ にボンディングワイ
ヤ６ を介して取着し、次に絶縁基体１ の上面外周部
に上下両面に半硬化状態の樹脂接着材８ 、９ を被着
させた枠体２ 及び透光性の蓋体３ を順次、載置させ
、しかる後、前記樹脂接着材８ 、９ に約１５０ ℃
の温度を印加し、樹脂接着材８ 、９ を完全に硬化さ
せることによって枠体２ の上下両面に絶縁基体１ と
透光性蓋体３ を接着し、固体撮像素子４ を内部に気
密に収容することによって最終製品としての撮像装置と
なる。Thus, according to the semiconductor device storage package of the present invention, the solid-state image sensor 4 is mounted on the solid-state image sensor mounting portion A of the insulating substrate 1, and the solid-state image sensor 4 is
Each electrode is attached to the metallized wiring layer 5 via a bonding wire 6, and then semi-cured resin adhesives 8 and 9 are applied to the upper and lower surfaces of the outer periphery of the insulating substrate 1. and a translucent lid 3 are placed in order, and then the resin adhesives 8 and 9 are heated at about 150°C.
By applying a temperature of By doing so, it becomes an imaging device as a final product.
【００２４】次に本発明の半導体素子収納用パッケージ
に使用される上下両面に半硬化状態の樹脂接着材を被着
させた枠体の製造方法について説明する。Next, a method of manufacturing a frame used in the semiconductor element storage package of the present invention, the upper and lower surfaces of which are coated with a semi-cured resin adhesive, will be described.
【００２５】まず図１に示すような断面形状の枠体２
を準備する。First, a frame 2 having a cross-sectional shape as shown in FIG.
Prepare.
【００２６】前記枠体２ は、例えばアルミナセラミッ
クスから成り、アルミナ（Ａｌ２ Ｏ ３ ） 、シリ
カ（ＳｉＯ２ ） 、マグネシア（ＭｇＯ） 、カルシ
ア（ＣａＯ） 等の原料粉末に適当な有機溶剤、溶媒を
添加混合し、しかる後、これを従来周知のプレス成形法
により所定形状に成形するとともに該成形体を高温（
約１６００℃） で焼成することによって形成される。The frame 2 is made of alumina ceramics, for example, and is made by adding and mixing a suitable organic solvent or solvent to raw material powders such as alumina (Al2O3), silica (SiO2), magnesia (MgO), and calcia (CaO). After that, this is molded into a predetermined shape by a conventionally well-known press molding method, and the molded body is heated to a high temperature (
It is formed by firing at a temperature of approximately 1,600°C.
【００２７】次に前記枠体２ の一方の面に硬化速度が
遅い第一の液状樹脂接着材を塗布し、しかる後、これを
約１５０ ℃の温度で加熱して初期の半硬化状態となす
。Next, a first liquid resin adhesive having a slow curing speed is applied to one surface of the frame 2, and then heated to a temperature of about 150° C. to bring it into an initial semi-cured state. .
【００２８】前記枠体２ に塗布する第一の液状樹脂接
着材はエポキシ樹脂に硬化剤としての芳香族ポリアミン
を添加したものからなり、従来周知のスクリーン印刷法
を採用することによって枠体２ の一主面に塗布される
。The first liquid resin adhesive to be applied to the frame 2 is made of an epoxy resin with an aromatic polyamine added as a curing agent, and is applied to the frame 2 by employing a conventionally well-known screen printing method. It is applied to one main surface.
【００２９】前記第一の液状接着材はエポキシ樹脂に硬
化剤としての芳香族ポリアミンが大量に添加され、その
粘度が１６００ポイズ以上となっており、該粘度が１６
００ポイズ以上の第一の樹脂接着材は１５０ ℃の熱を
４０〜６０分間印加してその全てが完全な半硬化状態と
なり、上記初期の半硬化状態とは樹脂接着材の一部が半
硬化状態になっている状態をいう。The first liquid adhesive has an epoxy resin added with a large amount of aromatic polyamine as a curing agent, and has a viscosity of 1600 poise or more.
The first resin adhesive with a temperature of 00 poise or higher is heated at 150°C for 40 to 60 minutes to completely semi-cure the adhesive. It refers to the state of being in a state.
【００３０】次に前記一方の面に第一の樹脂接着材が被
着された枠体２ はその他方の面に硬化速度の速い第二
の液状樹脂接着材が塗布される。Next, the frame 2 having the first resin adhesive applied to one surface thereof is coated with a second liquid resin adhesive having a fast curing speed on the other surface.
【００３１】前記第二の液状樹脂接着材はエポキシ樹脂
に硬化剤としての芳香族ポリアミンを添加したものから
なり、従来周知のスクリーン印刷法を採用することによ
って枠体２ の一主面に塗布される。The second liquid resin adhesive is made of an epoxy resin with an aromatic polyamine added as a hardening agent, and is applied to one main surface of the frame 2 by employing a conventionally well-known screen printing method. Ru.
【００３２】また前記第二の液状接着材はエポキシ樹脂
に硬化剤としての芳香族ポリアミンを少量添加した粘度
が１３００ポイズ程度のものから成り、該第二の樹脂接
着材は１５０ ℃の熱を１０〜２０分間印加すればその
全てが完全な半硬化状態となる。The second liquid adhesive is made of an epoxy resin with a small amount of aromatic polyamine added as a hardening agent and has a viscosity of about 1300 poise. If applied for ~20 minutes, all of them will be in a completely semi-cured state.
【００３３】前記枠体２ の上下両面に塗布された第一
、第二の樹脂接着材は最後に１５０ ℃の温度で加熱さ
れ、両者を実質的に同一の半硬化状態となすことによっ
て上下両面に半硬化状態の樹脂接着材を被着させた枠体
２ が完成する。The first and second resin adhesives applied to both the upper and lower surfaces of the frame body 2 are finally heated at a temperature of 150° C. to bring them both into substantially the same semi-cured state, so that both the upper and lower surfaces are heated. The frame body 2 is completed by covering the resin adhesive in a semi-cured state.
【００３４】尚、この場合、枠体２ の一方の面に塗布
された第一の樹脂接着材は半硬化状態にするための熱が
二度印加されることになるが該第一の樹脂接着材は第二
の樹脂接着材に比べて硬化速度が遅いため熱硬化が大幅
に進みすぎることは一切なく、第一、第二の樹脂接着材
は実質的に同じ時間に半硬化状態となすことができる。
従って、この上下両面に有機樹脂接着材を被着させた枠
体２は半導体素子収納用パッケージに使用し、その上下
面に絶縁基体１ 及び蓋体３ を載置して接着すると枠
体２ と絶縁基体１ 及び蓋体２ との接着が極めて強
固となり、パッケージ内部の気密封止の信頼性を極めて
高いものとなる。In this case, heat is applied twice to the first resin adhesive applied to one surface of the frame 2 to make it into a semi-cured state, but the first resin adhesive Since the curing speed of the first and second resin adhesives is slower than that of the second resin adhesive, the heat curing does not progress too much, and the first and second resin adhesives are semi-cured at substantially the same time. Can be done. Therefore, the frame 2 with an organic resin adhesive coated on both upper and lower surfaces is used as a package for storing semiconductor elements, and when the insulating base 1 and the lid 3 are placed on the upper and lower surfaces and bonded, the frame 2 and The adhesion between the insulating base 1 and the lid 2 becomes extremely strong, and the reliability of hermetic sealing inside the package becomes extremely high.
【００３５】[0035]
【発明の効果】本発明の半導体素子収納用パッケージの
製造方法によれば、樹脂接着材を実質的に同一の半硬化
状態として枠体の上下両面に被着させることができるた
め該枠体２ の上下に絶縁基体と蓋体とを前記樹脂接着
材を介して接着する際、その接着が極めて強固となり、
これによってパッケージ内部の気密封止の信頼性を高い
ものとなすことが可能となる。Effects of the Invention According to the method of manufacturing a package for storing semiconductor elements of the present invention, the resin adhesive can be applied to both the upper and lower surfaces of the frame in substantially the same semi-cured state. When the insulating base and the lid are bonded to the top and bottom of the body through the resin adhesive, the bond becomes extremely strong,
This makes it possible to achieve high reliability in hermetically sealing the inside of the package.
【図１】本発明の製造方法によって製作された半導体素
子収納用パッケージを固体撮像素子を収容するのに使用
した場合の例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of a semiconductor device storage package manufactured by the manufacturing method of the present invention used to store a solid-state image sensor.
１・・・絶縁基体 ２・・・枠体 ３・・・透光性蓋体 ５・・・メタライズ配線層 Ａ・・・固体撮像素子載置部 1... Insulating base 2...Frame body 3... Translucent lid body 5...Metallized wiring layer A...Solid-state image sensor mounting section
Claims (1)
素子が取着される載置部を有する絶縁基体と蓋体とを接
着して成る半導体素子収納用パッケージであって、前記
枠体に絶縁基体と蓋体とを接着する樹脂接着材が下記（
１） 乃至（３） の工程により予め枠体の上下面に半
硬化状態で被着されていることを特徴とする半導体素子
収納用パッケージの製造方法。 （１）枠体の一方の面に硬化速度が遅い液状の樹脂接着
材を塗布し、これを加熱して初期の半硬化状態にする工
程 （２）枠体の他方の面に硬化速度が短い液状の樹脂接着
材を塗布する工程 （３）枠体の上下面に塗布した各々の樹脂接着材を加熱
し、上下面の樹脂接着材を実質的に同一の半硬化状態と
なす工程1. A package for storing a semiconductor element, which comprises a lid and an insulating base having a mounting part on the upper and lower surfaces of a frame, on which the semiconductor element is attached via a resin adhesive, and a lid, the package comprising: The resin adhesive for bonding the insulating base and lid to the frame is shown below (
1) A method for manufacturing a package for housing a semiconductor element, characterized in that the package is adhered in a semi-hardened state to the upper and lower surfaces of a frame body in advance through the steps of (1) to (3). (1) Applying a liquid resin adhesive with a slow curing speed to one side of the frame and heating it to bring it to an initial semi-cured state (2) Applying a liquid resin adhesive with a slow curing speed to the other side of the frame Step of applying liquid resin adhesive (3) Step of heating each resin adhesive applied to the upper and lower surfaces of the frame to bring the resin adhesives on the upper and lower surfaces to substantially the same semi-cured state
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3049073A JP2685083B2 (en) | 1991-02-20 | 1991-02-20 | Manufacturing method of semiconductor device storage package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3049073A JP2685083B2 (en) | 1991-02-20 | 1991-02-20 | Manufacturing method of semiconductor device storage package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04266051A true JPH04266051A (en) | 1992-09-22 |
| JP2685083B2 JP2685083B2 (en) | 1997-12-03 |
Family
ID=12820910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3049073A Expired - Fee Related JP2685083B2 (en) | 1991-02-20 | 1991-02-20 | Manufacturing method of semiconductor device storage package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2685083B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07200287A (en) * | 1993-12-16 | 1995-08-04 | Internatl Business Mach Corp <Ibm> | Protected program-type memory cartridge and computer system using it |
| JP2010129624A (en) * | 2008-11-26 | 2010-06-10 | Kyocera Corp | Electronic component housing package, and electronic apparatus |
-
1991
- 1991-02-20 JP JP3049073A patent/JP2685083B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07200287A (en) * | 1993-12-16 | 1995-08-04 | Internatl Business Mach Corp <Ibm> | Protected program-type memory cartridge and computer system using it |
| JP2010129624A (en) * | 2008-11-26 | 2010-06-10 | Kyocera Corp | Electronic component housing package, and electronic apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2685083B2 (en) | 1997-12-03 |
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|---|---|---|---|
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