JP2003152116A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2003152116A
JP2003152116A JP2001352020A JP2001352020A JP2003152116A JP 2003152116 A JP2003152116 A JP 2003152116A JP 2001352020 A JP2001352020 A JP 2001352020A JP 2001352020 A JP2001352020 A JP 2001352020A JP 2003152116 A JP2003152116 A JP 2003152116A
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor
region
semiconductor region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001352020A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003152116A5 (enExample
Inventor
Toshitake Yaegashi
利武 八重樫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001352020A priority Critical patent/JP2003152116A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to US10/294,049 priority patent/US6995414B2/en
Priority to KR1020020071197A priority patent/KR100550191B1/ko
Publication of JP2003152116A publication Critical patent/JP2003152116A/ja
Publication of JP2003152116A5 publication Critical patent/JP2003152116A5/ja
Priority to US11/190,585 priority patent/US7135729B2/en
Priority to US11/190,619 priority patent/US7115930B2/en
Priority to US11/512,582 priority patent/US7442978B2/en
Priority to US11/514,705 priority patent/US7446364B2/en
Priority to US12/246,864 priority patent/US7812386B2/en
Priority to US12/881,747 priority patent/US8017467B2/en
Priority to US13/213,597 priority patent/US8202774B2/en
Priority to US13/471,822 priority patent/US8324674B2/en
Priority to US13/653,060 priority patent/US8541827B2/en
Priority to US13/963,850 priority patent/US8647940B2/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2001352020A 2001-11-16 2001-11-16 半導体記憶装置 Pending JP2003152116A (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2001352020A JP2003152116A (ja) 2001-11-16 2001-11-16 半導体記憶装置
US10/294,049 US6995414B2 (en) 2001-11-16 2002-11-14 Semiconductor memory device including multi-layer gate structure
KR1020020071197A KR100550191B1 (ko) 2001-11-16 2002-11-15 다층 게이트 구조물을 포함하는 반도체 메모리 장치
US11/190,585 US7135729B2 (en) 2001-11-16 2005-07-27 Semiconductor memory device including multi-layer gate structure
US11/190,619 US7115930B2 (en) 2001-11-16 2005-07-27 Semiconductor memory device including multi-layer gate structure
US11/512,582 US7442978B2 (en) 2001-11-16 2006-08-30 Semiconductor memory device including multi-layer gate structure
US11/514,705 US7446364B2 (en) 2001-11-16 2006-08-30 Semiconductor memory device including multi-layer gate structure
US12/246,864 US7812386B2 (en) 2001-11-16 2008-10-07 Semiconductor memory device including multi-layer gate structure
US12/881,747 US8017467B2 (en) 2001-11-16 2010-09-14 Semiconductor memory device including multi-layer gate structure
US13/213,597 US8202774B2 (en) 2001-11-16 2011-08-19 Semiconductor memory device including multi-layer gate structure
US13/471,822 US8324674B2 (en) 2001-11-16 2012-05-15 Semiconductor memory device including multi-layer gate structure
US13/653,060 US8541827B2 (en) 2001-11-16 2012-10-16 Semiconductor memory device including multi-layer gate structure
US13/963,850 US8647940B2 (en) 2001-11-16 2013-08-09 Semiconductor memory device including multi-layer gate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001352020A JP2003152116A (ja) 2001-11-16 2001-11-16 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2003152116A true JP2003152116A (ja) 2003-05-23
JP2003152116A5 JP2003152116A5 (enExample) 2004-07-29

Family

ID=19164252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001352020A Pending JP2003152116A (ja) 2001-11-16 2001-11-16 半導体記憶装置

Country Status (1)

Country Link
JP (1) JP2003152116A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006191017A (ja) * 2004-12-28 2006-07-20 Hynix Semiconductor Inc ナンドフラッシュメモリ素子
JP2007013078A (ja) * 2005-06-30 2007-01-18 Hynix Semiconductor Inc Ｎａｎｄフラッシュメモリ素子およびその製造方法
US7259421B2 (en) 2004-08-03 2007-08-21 Samsung Electronics Co., Ltd. Non-volatile memory devices having trenches
JP2008166682A (ja) * 2006-12-28 2008-07-17 Hynix Semiconductor Inc 半導体素子のコンタクトプラグ形成方法
JP2008258462A (ja) * 2007-04-06 2008-10-23 Toshiba Corp 不揮発性半導体記憶装置
JP2009049441A (ja) * 2008-12-02 2009-03-05 Toshiba Corp 半導体集積回路装置の製造方法
JP2012227542A (ja) * 2012-07-05 2012-11-15 Spansion Llc 半導体装置および半導体装置の製造方法
US8354705B2 (en) 2004-08-23 2013-01-15 Kabushiki Kaisha Toshiba Non-volatile NAND memory semiconductor integrated circuit
US8952536B2 (en) 2004-09-29 2015-02-10 Spansion Llc Semiconductor device and method of fabrication

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7259421B2 (en) 2004-08-03 2007-08-21 Samsung Electronics Co., Ltd. Non-volatile memory devices having trenches
US7501322B2 (en) 2004-08-03 2009-03-10 Sungwoo Electronics Co., Ltd. Methods of forming non-volatile memory devices having trenches
US8354705B2 (en) 2004-08-23 2013-01-15 Kabushiki Kaisha Toshiba Non-volatile NAND memory semiconductor integrated circuit
US8952536B2 (en) 2004-09-29 2015-02-10 Spansion Llc Semiconductor device and method of fabrication
JP2006191017A (ja) * 2004-12-28 2006-07-20 Hynix Semiconductor Inc ナンドフラッシュメモリ素子
JP2007013078A (ja) * 2005-06-30 2007-01-18 Hynix Semiconductor Inc Ｎａｎｄフラッシュメモリ素子およびその製造方法
JP2008166682A (ja) * 2006-12-28 2008-07-17 Hynix Semiconductor Inc 半導体素子のコンタクトプラグ形成方法
KR100875054B1 (ko) 2006-12-28 2008-12-19 주식회사 하이닉스반도체 반도체 소자의 콘택 플러그 형성 방법
US7576011B2 (en) 2006-12-28 2009-08-18 Hynix Semiconductor Inc. Method of forming contact plug in semiconductor
JP2008258462A (ja) * 2007-04-06 2008-10-23 Toshiba Corp 不揮発性半導体記憶装置
JP2009049441A (ja) * 2008-12-02 2009-03-05 Toshiba Corp 半導体集積回路装置の製造方法
JP2012227542A (ja) * 2012-07-05 2012-11-15 Spansion Llc 半導体装置および半導体装置の製造方法

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