JP2003152076A5 - - Google Patents

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Publication number
JP2003152076A5
JP2003152076A5 JP2001348736A JP2001348736A JP2003152076A5 JP 2003152076 A5 JP2003152076 A5 JP 2003152076A5 JP 2001348736 A JP2001348736 A JP 2001348736A JP 2001348736 A JP2001348736 A JP 2001348736A JP 2003152076 A5 JP2003152076 A5 JP 2003152076A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001348736A
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JP2003152076A (ja
JP4152619B2 (ja
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Priority claimed from JP2001348736A external-priority patent/JP4152619B2/ja
Priority to JP2001348736A priority Critical patent/JP4152619B2/ja
Priority to TW091116996A priority patent/TW564485B/zh
Priority to US10/216,818 priority patent/US6737746B2/en
Priority to DE10248272A priority patent/DE10248272A1/de
Priority to KR10-2002-0067042A priority patent/KR100487027B1/ko
Publication of JP2003152076A publication Critical patent/JP2003152076A/ja
Publication of JP2003152076A5 publication Critical patent/JP2003152076A5/ja
Publication of JP4152619B2 publication Critical patent/JP4152619B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001348736A 2001-11-14 2001-11-14 半導体装置およびその製造方法 Expired - Fee Related JP4152619B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001348736A JP4152619B2 (ja) 2001-11-14 2001-11-14 半導体装置およびその製造方法
TW091116996A TW564485B (en) 2001-11-14 2002-07-30 Semiconductor device
US10/216,818 US6737746B2 (en) 2001-11-14 2002-08-13 Semiconductor device containing copper diffusion preventive film of silicon carbide
DE10248272A DE10248272A1 (de) 2001-11-14 2002-10-16 Halbleitervorrichtung und Verfahren für ihre Herstellung
KR10-2002-0067042A KR100487027B1 (ko) 2001-11-14 2002-10-31 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001348736A JP4152619B2 (ja) 2001-11-14 2001-11-14 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2003152076A JP2003152076A (ja) 2003-05-23
JP2003152076A5 true JP2003152076A5 (ja) 2005-07-07
JP4152619B2 JP4152619B2 (ja) 2008-09-17

Family

ID=19161513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001348736A Expired - Fee Related JP4152619B2 (ja) 2001-11-14 2001-11-14 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US6737746B2 (ja)
JP (1) JP4152619B2 (ja)
KR (1) KR100487027B1 (ja)
DE (1) DE10248272A1 (ja)
TW (1) TW564485B (ja)

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US20030194496A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Methods for depositing dielectric material
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US6927178B2 (en) * 2002-07-11 2005-08-09 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
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JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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US7081673B2 (en) * 2003-04-17 2006-07-25 International Business Machines Corporation Multilayered cap barrier in microelectronic interconnect structures
US20040245636A1 (en) * 2003-06-06 2004-12-09 International Business Machines Corporation Full removal of dual damascene metal level
US20040253378A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes
US20050037153A1 (en) * 2003-08-14 2005-02-17 Applied Materials, Inc. Stress reduction of sioc low k films
US7553769B2 (en) * 2003-10-10 2009-06-30 Tokyo Electron Limited Method for treating a dielectric film
US7345000B2 (en) * 2003-10-10 2008-03-18 Tokyo Electron Limited Method and system for treating a dielectric film
US7968471B2 (en) * 2003-11-28 2011-06-28 Nec Corporation Porous insulating film, method for producing the same, and semiconductor device using the same
US7803705B2 (en) * 2004-01-13 2010-09-28 Tokyo Electron Limited Manufacturing method of semiconductor device and film deposition system
JP4938222B2 (ja) * 2004-02-03 2012-05-23 ルネサスエレクトロニクス株式会社 半導体装置
US7088003B2 (en) * 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
JP2005294333A (ja) * 2004-03-31 2005-10-20 Semiconductor Process Laboratory Co Ltd 成膜方法及び半導体装置
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
WO2006001356A1 (ja) 2004-06-24 2006-01-05 Nec Corporation 半導体装置及びその製造方法
US7229041B2 (en) * 2004-06-30 2007-06-12 Ohio Central Steel Company Lifting lid crusher
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US7288205B2 (en) * 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
US8053361B2 (en) * 2008-09-04 2011-11-08 Globalfoundries Singapore Pte. Ltd Interconnects with improved TDDB
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US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
US8629559B2 (en) 2012-02-09 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stress reduction apparatus with an inverted cup-shaped layer
US9905456B1 (en) 2016-09-26 2018-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
JP6975584B2 (ja) * 2017-09-07 2021-12-01 東京エレクトロン株式会社 半導体装置

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