JP2003145398A - Disc workpiece grinding method and device - Google Patents

Disc workpiece grinding method and device

Info

Publication number
JP2003145398A
JP2003145398A JP2001349595A JP2001349595A JP2003145398A JP 2003145398 A JP2003145398 A JP 2003145398A JP 2001349595 A JP2001349595 A JP 2001349595A JP 2001349595 A JP2001349595 A JP 2001349595A JP 2003145398 A JP2003145398 A JP 2003145398A
Authority
JP
Japan
Prior art keywords
polishing
work
tool
chamfer
outer peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001349595A
Other languages
Japanese (ja)
Inventor
Tetsuya Iwata
哲也 岩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
System Seiko Co Ltd
Original Assignee
System Seiko Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by System Seiko Co Ltd filed Critical System Seiko Co Ltd
Priority to JP2001349595A priority Critical patent/JP2003145398A/en
Publication of JP2003145398A publication Critical patent/JP2003145398A/en
Pending legal-status Critical Current

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  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To give highly precise grinding machining to chamfered surfaces of a disc workpiece such as a semiconductor wafer. SOLUTION: This grinding device comprises a workpiece driving shaft 1 for rotationally driving the disc workpiece W and tool driving shafts 11, 21 for rotationally driving grinding tools 12, 22. The grinding tools 12, 22 have grinding surfaces 14, 24 formed in a recessed shape on the inside of outer periphery edges 13, 23, respectively, so that the workpiece W intersects the outer periphery edges 13, 23 to make chamfered surfaces Ca, Cb in contact with the grinding surfaces 14, 24 between intersections. The grinding tools 12, 22 are rotationally driven in the state that the workpiece W is pushed out of the grinding tools 12, 22 with portions of the chamfered surfaces Ca, Cb in contact with the grinding surfaces between intersections.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明はシリコン半導体ウエ
ハなどの円板状ワークの外周部に形成されたチャンファ
面を研磨する円板状ワークの研磨加工技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for polishing a disk-shaped work, such as a silicon semiconductor wafer, for polishing a chamfer surface formed on an outer peripheral portion of the disk-shaped work.

【0002】[0002]

【従来の技術】半導体集積回路はシリコン製の半導体ウ
エハやガリウムヒ素などの化合物半導体ウエハの表面に
一連の製造プロセスを経て形成され、半導体ウエハから
チップ片を切り出すことにより半導体集積回路つまり半
導体デバイスが製造される。シリコン半導体ウエハは、
円柱形状のシリコン単結晶インゴットからカッターによ
り円板状に切り出すことによって形成される。
2. Description of the Related Art A semiconductor integrated circuit is formed on a surface of a silicon semiconductor wafer or a compound semiconductor wafer such as gallium arsenide through a series of manufacturing processes, and a semiconductor integrated circuit, that is, a semiconductor device is obtained by cutting a chip piece from the semiconductor wafer. Manufactured. Silicon semiconductor wafer
It is formed by cutting a cylindrical silicon single crystal ingot with a cutter into a disc shape.

【0003】切り出された半導体ウエハの外周部には砥
石を用いた面取り加工によってチャンファ面と外周面が
研削加工され、さらに、これらのチャンファ面と外周面
は研磨具を用いてラッピング加工やポリッシング加工さ
れる。半導体ウエハには結晶方向の判別や位置合わせを
行うために、オリエンテーションフラットやノッチが形
成されることになり、これらの部分にも研磨パッドを用
いてラッピングやポリッシング加工が行われる。このよ
うな半導体ウエハの外周部の研磨加工技術としては、た
とえば、特開平7-60624号公報に開示されるように、平
坦面に研磨布が設けられたスピンドルを回転させて半導
体ウエハの外周面とチャンファ面とを研磨し、外周面に
研磨布が設けられた回転円板を回転させてノッチを研磨
するようにしたものがある。
The chamfer surface and the outer peripheral surface are ground by the chamfering process using a grindstone on the outer peripheral portion of the cut semiconductor wafer. Further, the chamfer surface and the outer peripheral surface are lapped or polished by using a polishing tool. To be done. Orientation flats and notches are to be formed on the semiconductor wafer in order to determine the crystal orientation and position, and these portions are also subjected to lapping and polishing using a polishing pad. As such a polishing technique for the outer peripheral portion of the semiconductor wafer, for example, as disclosed in JP-A-7-60624, the outer peripheral surface of the semiconductor wafer is rotated by rotating a spindle provided with a polishing cloth on a flat surface. And a chamfer surface are polished, and a notch is polished by rotating a rotating disk having a polishing cloth on the outer peripheral surface.

【0004】研磨加工にはワークの寸法誤差を調整した
り、表面仕上げ状態を改善するために行うラッピング加
工やワークの表面に高度の鏡面を形成するためのポリッ
シング加工などがあり、それぞれに合わせて研磨布や研
磨液が選定される。
The polishing process includes a lapping process for adjusting the dimensional error of the work and improving the surface finish condition, and a polishing process for forming a high-level mirror surface on the work surface. A polishing cloth or polishing liquid is selected.

【0005】[0005]

【発明が解決しようとする課題】上述したように、チャ
ンファ面の研磨を研磨具の平坦な研磨面に押し付けて研
磨加工する場合には、研磨面は線接触に近い僅かな領域
が半導体ウエハのチャンファ面に接触することになるの
で、研磨に時間がかかり研磨加工能率を向上することが
できない。
As described above, when polishing the chamfer surface by pressing it against the flat polishing surface of the polishing tool, the polishing surface has a small area near the line contact of the semiconductor wafer. Since it comes into contact with the chamfer surface, it takes a long time to polish, and the polishing efficiency cannot be improved.

【0006】一方、特開平10-29142号公報に開示される
面取加工技術にあっては、凹面状の研磨面に半導体ウエ
ハの外周面取り部の全面を押し当てた状態で研磨面と半
導体ウエハとを相対回転させて面取り部つまりチャンフ
ァ面を研磨加工するようにしている。しかしながら、チ
ャンファ面全体を凹面状の研磨面に押圧させるようにし
た場合には、半導体ウエハの表面のうちチャンファ面に
隣接した部位が研磨面によって研磨加工されることにな
り、ウエハの表面にへこみや段差が発生してしまうとい
う問題点がある。この段差の発生は、同じ研磨部材を使
用して繰り返して多数枚の半導体ウエハの加工を行うこ
とによって、研磨面にトラック状の溝が発生すると特に
顕著になる。
On the other hand, in the chamfering processing technique disclosed in Japanese Patent Laid-Open No. 10-29142, the polishing surface and the semiconductor wafer are pressed against the concave polishing surface while the entire outer peripheral chamfered portion is pressed. And are rotated relative to each other so that the chamfered portion, that is, the chamfered surface is polished. However, if the entire chamfer surface is pressed against the concave polishing surface, the portion of the surface of the semiconductor wafer adjacent to the chamfer surface will be polished by the polishing surface, and the surface of the wafer will be dented. There is a problem that a step is generated. The generation of the step becomes particularly remarkable when a track-shaped groove is formed on the polishing surface by repeatedly processing a large number of semiconductor wafers using the same polishing member.

【0007】このようにへこみや段差が発生した半導体
ウエハは製品化することができないので、加工歩留りを
低下させることになり、加工歩留りを高めるには研磨部
材を頻繁に新品と交換しなければならず、加工能率を向
上することができなくなる。
Since semiconductor wafers having such dents or steps cannot be commercialized, the processing yield is lowered, and the polishing member must be frequently replaced with a new polishing member in order to increase the processing yield. Therefore, it becomes impossible to improve the processing efficiency.

【0008】本発明の目的は、半導体ウエハなどの円板
状ワークのチャンファ面を高精度で研磨加工し得るよう
にすることにある。
An object of the present invention is to enable the chamfer surface of a disk-shaped work such as a semiconductor wafer to be polished with high accuracy.

【0009】本発明の他の目的は、円板状ワークのチャ
ンファ面加工の加工能率を向上することにある。
Another object of the present invention is to improve the processing efficiency of the chamfer surface processing of a disk-shaped work.

【0010】[0010]

【課題を解決するための手段】本発明の円板状ワークの
研磨方法は、円板状ワークの外周部のチャンファ面を研
磨加工するワークの研磨方法であって、研磨具の外周縁
部の内側に凹面状に形成された研磨面のうち、前記外周
縁部にワークが交差する交差部間に前記チャンファ面を
接触させ、前記ワークをワーク駆動シャフトにより回転
駆動するとともに、前記研磨具を工具駆動シャフトによ
り回転駆動し、前記交差部間の研磨面に前記チャンファ
面の一部を接触させて前記ワークを前記研磨具からせり
出させた状態で前記チャンファ面を研磨することを特徴
とする。
A method for polishing a disk-shaped work according to the present invention is a method for polishing a chamfer surface of an outer peripheral portion of a disk-shaped work, and is for polishing an outer peripheral edge of a polishing tool. Of the polishing surface formed in a concave shape on the inside, the chamfer surface is brought into contact between intersections where the work intersects the outer peripheral edge portion, and the work is driven to rotate by a work drive shaft, and the polishing tool is used as a tool. The chamfer surface is polished by being driven to rotate by a drive shaft so that a part of the chamfer surface is brought into contact with the polishing surface between the intersecting portions and the work is pushed out of the polishing tool.

【0011】本発明の円板状ワークの加工方法において
は、前記ワークの一方面側のチャンファ面と、前記ワー
クの他方面側のチャンファ面とを2つの前記研磨具によ
り同時に研磨することを特徴とする。
In the method for processing a disk-shaped work according to the present invention, the chamfer surface on one side of the work and the chamfer surface on the other side of the work are simultaneously polished by the two polishing tools. And

【0012】本発明の円板状ワークの研磨装置は、円板
状ワークの外周部のチャンファ面を研磨加工するワーク
の研磨装置であって、前記円板状ワークを回転駆動する
ワーク駆動シャフトと、外周縁部の内側に凹面状に形成
された研磨面を有し、前記外周縁部に前記ワークを交差
させて交差部間の研磨面に前記チャンファ面が接触する
研磨具と、前記交差部間の研磨面に前記チャンファ面の
一部を接触させて前記ワークを前記研磨具からせり出さ
せた状態で前記研磨具を回転駆動する工具駆動シャフト
とを有することを特徴とする。
The disk-shaped workpiece polishing apparatus of the present invention is a workpiece polishing apparatus for polishing a chamfer surface on the outer peripheral portion of a disk-shaped workpiece, the workpiece-drive shaft rotating and driving the disk-shaped workpiece. A polishing tool having a polishing surface formed in a concave shape on the inner side of the outer peripheral edge portion, wherein the workpiece intersects the outer peripheral edge portion and the chamfer surface contacts the polishing surface between the intersecting portions; A tool drive shaft for rotating and driving the polishing tool in a state in which a part of the chamfer surface is brought into contact with the polishing surface between and the work is pushed out of the polishing tool.

【0013】本発明の円板状ワ―クの研磨装置において
は、前記ワークの一方面側のチャンファ面を研磨する第
1の研磨具と、前記ワークの他方面側のチャンファ面を
研磨する第2の研磨具とを有し、前記ワークの両面のチ
ャンファ面を同時に研磨することを特徴とする。
In the disk-shaped work polishing apparatus of the present invention, there is provided a first polishing tool for polishing the chamfer surface on one side of the work, and a first polishing tool for polishing the chamfer surface on the other side of the work. The present invention is characterized in that the chamfer surface on both sides of the work is polished at the same time.

【0014】[0014]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて詳細に説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings.

【0015】図1は本発明の一実施の形態である円板状
ワークの研磨装置を示す斜視図であり、図2は本発明の
他の実施の形態である円板状ワークの研磨装置を示す斜
視図である。ワークWの外周部には、図1に示すよう
に、表面つまり一方面Saと外周面Pとの間のチャンフ
ァ面Caと、裏面つまり他方面Sbと外周面Pとの間の
チャンファ面Cbとが形成されている。図1および図2
に示す研磨装置によりシリコン半導体ウエハを円板状ワ
ークWとして、その外周部に形成された表裏両面側のチ
ャンファ面Ca,Cbが研磨加工される。半導体ウエハ
には結晶方向の判別や位置合わせのために、オリエンテ
ーションフラットやノッチが形成されるが、図において
は、これらは省略されている。
FIG. 1 is a perspective view showing a disk-shaped workpiece polishing apparatus according to an embodiment of the present invention, and FIG. 2 shows a disk-shaped workpiece polishing apparatus according to another embodiment of the present invention. It is a perspective view shown. At the outer peripheral portion of the work W, as shown in FIG. 1, a chamfer surface Ca between the front surface, that is, the one surface Sa and the outer peripheral surface P, and a chamfer surface Cb between the rear surface, that is, the other surface Sb and the outer peripheral surface P are provided. Are formed. 1 and 2
With the polishing apparatus shown in FIG. 1, the silicon semiconductor wafer is used as a disk-shaped work W, and the chamfer surfaces Ca and Cb formed on the outer peripheral portion of the front and back surfaces are polished. Orientation flats and notches are formed on the semiconductor wafer for the purpose of determining the crystal orientation and alignment, but these are omitted in the figure.

【0016】ワークWは図1および図2に示すように、
垂直方向の回転中心軸Owを中心に回転するワーク駆動
シャフト1に設けられたワーク保持台2に保持されて回
転駆動されるようになっている。ワーク保持台2には図
示しない真空吸着機構が組み込まれ、ワークWは負圧空
気によって吸着されて保持されるようになっている。ワ
ークWのうち、表面Sa側のチャンファ面Caは図1に
示される研磨装置によって研磨加工され、裏面Sb側の
チャンファ面Cbは図2に示された研磨装置によって研
磨加工される。
The work W is, as shown in FIGS. 1 and 2,
The work is held by a work holding table 2 provided on a work driving shaft 1 that rotates about a vertical rotation center axis Ow and is driven to rotate. A vacuum suction mechanism (not shown) is incorporated in the work holding table 2, and the work W is sucked and held by negative pressure air. Of the work W, the chamfer surface Ca on the front surface Sa side is polished by the polishing apparatus shown in FIG. 1, and the chamfer surface Cb on the back surface Sb side is polished by the polishing apparatus shown in FIG.

【0017】一方面側のチャンファ面Caを研磨する研
磨装置は、図1に示すように、回転中心軸Owに対して
傾斜した回転中心軸Ogaを中心に回転する工具駆動シャ
フト11を有し、この工具駆動シャフト11には研磨具
12が設けられている。この研磨具12は外周面が円筒
形状となっており、その円形の外周縁部13の内側には
凹面状に形成された研磨面14が形成されている。工具
駆動シャフト11は軸方向に進退移動自在となってお
り、工具駆動シャフト11の前進移動によって研磨具1
2の研磨面14はワークWのチャンファ面Caに接触す
ることになる。ワークWは研磨具12の研磨面14を横
切ってその外周縁部13にそれぞれの交差部15の位置
で交差するように研磨面14に接触し、ワークWはその
チャンファ面Ca全体が研磨面14に同時には接触する
ことなく、交差部15の間の部分のみが研磨面14に同
時に接触することになる。したがって、図1に示すよう
に、ワークWのうち研磨面14に接触しない部分は、研
磨具12からせり出した状態つまりオーバーハングした
状態となって研磨加工される。
As shown in FIG. 1, the polishing apparatus for polishing the chamfer surface Ca on the one side has a tool drive shaft 11 which rotates about a rotation center axis Oga inclined with respect to the rotation center axis Ow. A polishing tool 12 is provided on the tool drive shaft 11. The polishing tool 12 has a cylindrical outer peripheral surface, and a polishing surface 14 formed in a concave shape is formed inside the circular outer peripheral edge portion 13. The tool drive shaft 11 is movable back and forth in the axial direction, and the forward movement of the tool drive shaft 11 causes the polishing tool 1 to move.
The second polishing surface 14 comes into contact with the chamfer surface Ca of the work W. The workpiece W contacts the polishing surface 14 so as to cross the polishing surface 14 of the polishing tool 12 and intersect the outer peripheral edge portion 13 at each intersection 15, and the workpiece W has its entire chamfered surface Ca polished surface 14. However, only the portion between the intersecting portions 15 comes into contact with the polishing surface 14 at the same time. Therefore, as shown in FIG. 1, the portion of the work W that does not come into contact with the polishing surface 14 is polished in a state of protruding from the polishing tool 12, that is, in an overhang state.

【0018】他方面側のチャンファ面Cbを研磨する研
磨装置は、図2に示すように、回転中心軸Owに対して
傾斜した回転中心軸Ogbを中心に回転する工具駆動シャ
フト21を有し、この工具駆動シャフト21には研磨具
22が設けられており、工具駆動シャフト21は軸方向
に進退移動自在かつ径方向に移動自在となっている。こ
の研磨具22は、研磨具12と同様に、外周縁部23の
内側に凹面状の研磨面24が形成され、ワークWのチャ
ンファ面Cbは交差部25の間の部分のみが研磨面24
に同時に接触することになる。したがって、図2に示す
ように、ワークWはチャンファ面Cbのうち研磨面24
に接触しない部分は、研磨具22からせり出した状態つ
まりオーバーハングした状態となって研磨加工される。
As shown in FIG. 2, the polishing apparatus for polishing the chamfer surface Cb on the other side has a tool drive shaft 21 which rotates about a rotation center axis Ogb inclined with respect to the rotation center axis Ow, The tool drive shaft 21 is provided with a polishing tool 22, and the tool drive shaft 21 is movable in the axial direction and movable in the radial direction. Similar to the polishing tool 12, the polishing tool 22 has a concave polishing surface 24 formed inside the outer peripheral edge portion 23, and the chamfered surface Cb of the work W has only the polishing surface 24 between the intersecting portions 25.
Will be contacted at the same time. Therefore, as shown in FIG. 2, the work W has a polishing surface 24 of the chamfer surface Cb.
The portion that does not come into contact with is polished such that it protrudes from the polishing tool 22, that is, it overhangs.

【0019】それぞれの研磨面14,24は布などの研
磨材料によって形成され、研磨加工時にはポリッシング
液やラッピング液などの研磨液が研磨面14,24に塗
布されることになる。
The polishing surfaces 14 and 24 are made of a polishing material such as cloth, and a polishing liquid such as a polishing liquid or a lapping liquid is applied to the polishing surfaces 14 and 24 during polishing.

【0020】図1に示す研磨装置を用いてワークWの表
側のチャンファ面Caを研磨するには、ワーク支持台2
の上にワークWを保持し、ワークWに向けて図1に示す
研磨具12を接近移動させる。これにより、研磨具12
には2つの交差部15の間を横断させるようにしてこれ
らの間における研磨面14にチャンファ面Caの一部が
接触した状態となる。この状態のもとで、ワーク駆動シ
ャフト1と工具駆動シャフト11をそれぞれ矢印で示す
方向に回転させると、チャンファ面Ca全体が研磨加工
される。
To polish the chamfer surface Ca on the front side of the work W using the polishing apparatus shown in FIG.
The work W is held on the work W, and the polishing tool 12 shown in FIG. Thereby, the polishing tool 12
Thus, a part of the chamfer surface Ca is in contact with the polishing surface 14 between the two intersecting portions 15 so as to cross the two intersecting portions 15. Under this condition, when the work drive shaft 1 and the tool drive shaft 11 are rotated in the directions indicated by arrows, the entire chamfer surface Ca is ground.

【0021】次いで、裏面側のチャンファ面Cbを研磨
するには、図2に示す研磨具22が設けられた他のワー
ク支持台2にワークWを搬送してその上にワークWを保
持する。そして、ワークWに向けて研磨具22を接近移
動させて、交差部25の間を横断するように両方の交差
部25の間における研磨面24にチャンファ面Cbの一
部を接触させる。この状態のもとで、工具駆動シャフト
21とワーク駆動シャフト1をそれぞれ矢印で示す方向
に回転させることにより、チャンファ面Cb全体が研磨
加工される。ただし、それぞれの研磨具12,22に対
応させてワーク保持台2を設置することなく、1台のワ
ーク支持台2に対して2つの研磨具12,22を設ける
ことにより、ワーク保持台2にワークWを据えつけた状
態のままで、それぞれの研磨具12,22により順次両
側のチャンファ面Ca,Cbを研磨加工するようにして
も良い。
Next, in order to polish the chamfered surface Cb on the back surface side, the work W is conveyed to another work support base 2 provided with the polishing tool 22 shown in FIG. 2 and the work W is held thereon. Then, the polishing tool 22 is moved toward the work W, and a part of the chamfer surface Cb is brought into contact with the polishing surface 24 between the intersections 25 so as to cross the intersections 25. Under this state, the tool drive shaft 21 and the work drive shaft 1 are respectively rotated in the directions indicated by the arrows, so that the entire chamfer surface Cb is polished. However, by providing two polishing tools 12 and 22 for one work support base 2 without installing the work support base 2 corresponding to the respective polishing tools 12 and 22, The chamfer surfaces Ca and Cb on both sides may be sequentially polished by the respective polishing tools 12 and 22 with the work W being installed.

【0022】前述した場合には、図1に示す研磨具12
を用いて一方のチャンファ面Caを研磨し、図2に示す
研磨具22を用いて他方のチャンファ面Cbを研磨する
ようにしているが、図1に示す研磨具12を用いて一方
のチャンファ面Caを研磨した後に、ワークWをワーク
支持台2の上で表裏反転させて研磨具12を用いて他方
の研磨面Cbを研磨するようにしても良い。同様に、ワ
ークWをワーク保持台2の上で反転させるのであれば、
図2に示す研磨具22により両方のチャンファ面Ca,
Cbを順次研磨するようにしても良い。
In the case described above, the polishing tool 12 shown in FIG.
One chamfer surface Ca is polished by using the polishing tool, and the other chamfer surface Cb is polished by using the polishing tool 22 shown in FIG. 2. However, one chamfer surface is polished by using the polishing tool 12 shown in FIG. After polishing Ca, the work W may be turned upside down on the work support base 2 and the other polishing surface Cb may be polished using the polishing tool 12. Similarly, if the work W is inverted on the work holding table 2,
With the polishing tool 22 shown in FIG. 2, both chamfer surfaces Ca,
Cb may be sequentially polished.

【0023】このように、上述した研磨装置を用いた研
磨加工方式としては、ワーク保持台2の上でワークWを
反転させるようにし、図1に示す研磨装置と図2に示す
研磨装置の一方によって両側のチャンファ面Ca,Cb
を順次研磨する方式と、図1に示す研磨装置によってチ
ャンファ面Caを研磨した後に、ワークを搬送して図2
に示す研磨装置によってチャンファ面Cbを研磨する方
式とがある。
As described above, as a polishing method using the above-mentioned polishing apparatus, the work W is inverted on the work holding table 2 and one of the polishing apparatus shown in FIG. 1 and the polishing apparatus shown in FIG. Depending on the chamfer surfaces Ca and Cb on both sides
2 is sequentially polished, and after the chamfer surface Ca is polished by the polishing apparatus shown in FIG.
There is a method of polishing the chamfer surface Cb by the polishing apparatus shown in FIG.

【0024】図3(A)は図1に示す研磨装置によりワ
ークWを研磨しているときにおける凹面状の研磨面14
の最も底側に接触しているワークWの部分つまり図1に
おけるA部を示す拡大断面図であり、図3(B)は外周
縁部13近傍におけるワークWの部分つまり図1におけ
るB部を示す拡大断面図である。ワークWは研磨面14
にこれを横断するように接触し、両方の外周縁部13の
一方の交差部15と他方の交差部15との間で同時に接
触する。
FIG. 3A shows a concave polishing surface 14 when polishing the work W by the polishing apparatus shown in FIG.
3 is an enlarged cross-sectional view showing a portion of the work W that is in contact with the bottommost side of the work, that is, a portion A in FIG. 1. FIG. 3B shows a portion of the work W near the outer peripheral edge portion 13, that is, a portion B in FIG. It is an expanded sectional view shown. Work W has a polished surface 14
Across the same, and simultaneously contact between one crossing portion 15 and the other crossing portion 15 of both outer peripheral edge portions 13.

【0025】この接触部分は多数枚のワークWを研磨す
るに伴って図3(A)において二点鎖線Qで示すように
徐々に磨耗して径方向最内方の部分にはワークWに接触
しない部分との間で段差Tが図3(A)に示すように発
生することになる。しかしながら、外周縁部13からは
その外方にワークWがせり出しているので、図3(B)
に示すように、外周縁部13には段差が発生しない。こ
れにより、多数枚のワークWを研磨することによって、
研磨面14が符号Qで示すように磨耗しても、研磨面1
4がワークWの表面Saに周り込むことが防止されるの
で、多数枚のワークを研磨加工しても表面Saにへこみ
や段差が発生することを防止でき、頻繁に研磨具12を
交換することなく、多数枚のワークの研磨加工を高精度
で行うことができる。図2に示す研磨装置についても同
様にしてワークWの他方面Sbにへこみや段差が発生す
ることを防止できる。
This contact portion gradually wears as a large number of workpieces W are polished, as shown by the chain double-dashed line Q in FIG. 3A, and the innermost portion in the radial direction contacts the workpiece W. A step T is generated between the portion and the portion not to be formed, as shown in FIG. However, since the work W is protruding from the outer peripheral edge portion 13 to the outside thereof, FIG.
As shown in, no step is formed on the outer peripheral edge portion 13. Thereby, by polishing a large number of workpieces W,
Even if the polishing surface 14 is worn as indicated by the symbol Q, the polishing surface 1
Since 4 is prevented from getting around the surface Sa of the work W, it is possible to prevent dents and steps from being generated on the surface Sa even when polishing a large number of works, and to replace the polishing tool 12 frequently. Therefore, it is possible to polish a large number of works with high accuracy. Similarly, in the polishing apparatus shown in FIG. 2, it is possible to prevent the other surface Sb of the work W from being dented or stepped.

【0026】図4は本発明の他の実施の形態である研磨
装置を示す斜視図であり、図5は図4の一部切り欠き正
面図であり、図6は図5の平面図であり、図7は図5に
おけるC−C線に沿う断面図である。
FIG. 4 is a perspective view showing a polishing apparatus according to another embodiment of the present invention, FIG. 5 is a partially cutaway front view of FIG. 4, and FIG. 6 is a plan view of FIG. , FIG. 7 is a sectional view taken along the line CC in FIG.

【0027】この研磨装置は表裏両面のチャンファ面C
a,Cbを同時に研磨するための装置であり、図1に示
す研磨具12と図2に示す研磨具22とがワーク支持台
2に隣接して設けられている。したがって、ワークWの
両方のチャンファ面を同時に研磨加工することができる
が、両方の研磨具12,22を時間差をもって加工する
ようにしても良い。図4〜図7に示す研磨装置のよう
に、1台の装置によって両方のチャンファ面を研磨でき
るようにすると、ノッチやオリエンテーションフラット
の研磨加工と、表面Saの研磨加工と、洗浄処理とを含
めたワーク研磨装置全体のサイズを小型化することがで
きる。
This polishing apparatus has chamfered surfaces C on both front and back sides.
This is a device for simultaneously polishing a and Cb, and a polishing tool 12 shown in FIG. 1 and a polishing tool 22 shown in FIG. 2 are provided adjacent to the work support base 2. Therefore, both chamfer surfaces of the work W can be simultaneously polished, but both polishing tools 12 and 22 may be polished with a time difference. When both chamfer surfaces can be polished by one device like the polishing device shown in FIGS. 4 to 7, the polishing process of notches and orientation flats, the polishing process of the surface Sa, and the cleaning process are included. Further, the size of the entire work polishing apparatus can be reduced.

【0028】図4〜図7に示す研磨装置にあっては、両
方の研磨具12,22はワークWの外周部のうち相互に
180度ずれた部位に接触させているが、相互に90度
ずれて部位でも、それ以外の角度ずれた部位に接触させ
るようにしても良い。また、それぞれの研磨面14,2
4の凹面の曲率は、図5に示すように、それぞれの回転
中心軸Oga,OgbとワークWの面とのなす角度α,βと
ワークWの外径とにより設定されており、交差部間の研
磨面14,24に対応するチャンファ面の部分は研磨面
14,24に接触することになる。
In the polishing apparatus shown in FIGS. 4 to 7, both of the polishing tools 12 and 22 are in contact with the outer peripheral portions of the work W, which are shifted by 180 degrees from each other, but 90 degrees relative to each other. It is also possible to make contact with a shifted portion or a portion with another angle shift. In addition, each polishing surface 14, 2
As shown in FIG. 5, the curvature of the concave surface of No. 4 is set by the angles α, β formed by the respective rotation center axes Oga, Ogb and the surface of the work W and the outer diameter of the work W, and between the intersections. The chamfered surface portions corresponding to the polishing surfaces 14 and 24 come into contact with the polishing surfaces 14 and 24.

【0029】本発明は前記実施の形態に限定されるもの
ではなく、その要旨を逸脱しない範囲で種々変更可能で
ある。たとえば、図示する研磨装置は半導体ウエハをワ
ークとしてラッピングやポリッシングを行うために使用
されているが、ワークとしては半導体ウエハに限られ
ず、ハードディスクなどの他の円板状部材を研磨加工す
るためにも適用することができ、砥石を用いてチャンフ
ァ面を加工するためにも使用することができる。また、
図示する研磨装置は回転中心軸Owが垂直方向を向いて
いるが、水平方向を向けるようにしても良く、垂直線に
対して傾斜した方向を向けるようにしても良い。
The present invention is not limited to the above-mentioned embodiment, but various modifications can be made without departing from the scope of the invention. For example, the illustrated polishing apparatus is used for lapping and polishing a semiconductor wafer as a work, but the work is not limited to the semiconductor wafer and can be used for polishing other disk-shaped members such as a hard disk. It can be applied and can also be used to machine chamfer surfaces with a grindstone. Also,
Although the rotation center axis Ow of the illustrated polishing apparatus is oriented in the vertical direction, it may be oriented in the horizontal direction or may be oriented in a direction inclined with respect to the vertical line.

【0030】[0030]

【発明の効果】本発明によれば、研磨具の研磨面が円板
状ワークの平坦面に周り込むことが防止され、チャンフ
ァ面を高精度に研磨加工することができる。同じ研磨具
を用いて多量のワークを研磨加工することによって研磨
面にへこみや段差が発生しても、その段差に起因して研
磨面がワークの表面に周り込むことが防止されるので、
研磨具の交換頻度を少なくして研磨加工能率を向上させ
ることができる。
According to the present invention, the polishing surface of the polishing tool is prevented from entering the flat surface of the disk-shaped work, and the chamfer surface can be polished with high precision. Even if a dent or a step is generated on the polishing surface by polishing a large amount of the work with the same polishing tool, the polishing surface is prevented from getting around the surface of the work due to the step.
It is possible to improve the efficiency of polishing by reducing the frequency of exchanging the polishing tool.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施の形態である円板状ワークの研
磨装置を示す斜視図である。
FIG. 1 is a perspective view showing a disk-shaped workpiece polishing apparatus according to an embodiment of the present invention.

【図2】本発明の他の実施の形態である円板状ワークの
研磨装置を示す斜視図である。
FIG. 2 is a perspective view showing a disk-shaped workpiece polishing apparatus according to another embodiment of the present invention.

【図3】(A)は図1におけるA部を拡大して示す断面
図であり、(B)は図1におけるB部を拡大して示す断
面図である。
3 (A) is an enlarged sectional view showing a portion A in FIG. 1, and FIG. 3 (B) is an enlarged sectional view showing a portion B in FIG.

【図4】本発明の他の実施の形態である円板状ワークの
研磨装置を示す斜視図である。
FIG. 4 is a perspective view showing a disk-shaped workpiece polishing apparatus according to another embodiment of the present invention.

【図5】図4の一部切り欠き正面図である。5 is a partially cutaway front view of FIG. 4. FIG.

【図6】図5の平面図である。FIG. 6 is a plan view of FIG.

【図7】図5におけるC−C線に沿う断面図である。7 is a cross-sectional view taken along the line CC in FIG.

【符号の説明】 1 ワーク駆動シャフト 2 ワーク保持台 11 工具駆動シャフト 12 研磨具 13 外周縁部 14 研磨面 15 交差部 21 工具駆動シャフト 22 研磨具 23 外周縁部 24 研磨面 25 交差部 W 円板状ワーク(半導体ウエハ) Ca,Cb チャンファ面 Sa 表面(一方面) Sb 裏面(他方面) P 外周面[Explanation of symbols] 1 Work drive shaft 2 Work holder 11 Tool drive shaft 12 Polishing tools 13 outer peripheral edge 14 Polished surface 15 intersection 21 Tool Drive Shaft 22 Polishing tool 23 Outer edge 24 Polished surface 25 intersection W Disk-shaped work (semiconductor wafer) Ca, Cb chamfer surface Sa surface (one side) Sb back surface (other surface) P outer peripheral surface

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 円板状ワークの外周部のチャンファ面を
研磨加工するワークの研磨方法であって、 研磨具の外周縁部の内側に凹面状に形成された研磨面の
うち、前記外周縁部にワークが交差する交差部間に前記
チャンファ面を接触させ、 前記ワークをワーク駆動シャフトにより回転駆動すると
ともに、前記研磨具を工具駆動シャフトにより回転駆動
し、 前記交差部間の研磨面に前記チャンファ面の一部を接触
させて前記ワークを前記研磨具からせり出させた状態で
前記チャンファ面を研磨することを特徴とする円板状ワ
ークの加工方法。
1. A method of polishing a chamfer surface on the outer peripheral portion of a disk-shaped workpiece, wherein the outer peripheral edge is a concave surface formed inside the outer peripheral edge portion of the polishing tool. The chamfer surface is brought into contact between intersections where a work intersects a portion, the work is driven to rotate by a work drive shaft, and the polishing tool is driven to rotate by a tool drive shaft. A method of processing a disk-shaped work, comprising polishing the chamfer surface in a state where a part of the chamfer surface is brought into contact with the chamfer surface and the work is pushed out of the polishing tool.
【請求項2】 請求項1記載の研磨方法において、前記
ワークの一方面側のチャンファ面と、前記ワークの他方
面側のチャンファ面とを2つの前記研磨具により同時に
研磨することを特徴とする円板状ワークの研磨方法。
2. The polishing method according to claim 1, wherein the chamfer surface on one side of the work and the chamfer surface on the other side of the work are simultaneously polished by the two polishing tools. Polishing method for disk-shaped work.
【請求項3】 円板状ワークの外周部のチャンファ面を
研磨加工するワークの研磨装置であって、 前記円板状ワークを回転駆動するワーク駆動シャフト
と、 外周縁部の内側に凹面状に形成された研磨面を有し、前
記外周縁部に前記ワークを交差させて交差部間の研磨面
に前記チャンファ面が接触する研磨具と、 前記交差部間の研磨面に前記チャンファ面の一部を接触
させて前記ワークを前記研磨具からせり出させた状態で
前記研磨具を回転駆動する工具駆動シャフトとを有する
ことを特徴とする円板状ワ―クの研磨装置。
3. A work polishing apparatus for polishing a chamfer surface of an outer peripheral portion of a disk-shaped work, the work drive shaft rotating and driving the disk-shaped work, and a concave surface inside the outer peripheral edge portion. A polishing tool having a formed polishing surface, wherein the chamfer surface contacts the polishing surface between the intersections by intersecting the work with the outer peripheral edge; and one of the chamfer surfaces on the polishing surface between the intersections. And a tool driving shaft for rotating and driving the polishing tool in a state where the work pieces are brought out of contact with each other and the work is pushed out of the polishing tool.
【請求項4】 請求項3記載の円板状ワークの研磨装置
において、前記ワークの一方面側のチャンファ面を研磨
する第1の研磨具と、前記ワークの他方面側のチャンフ
ァ面を研磨する第2の研磨具とを有し、前記ワークの両
面のチャンファ面を同時に研磨することを特徴とする円
板状ワークの研磨装置。
4. The disk-shaped workpiece polishing apparatus according to claim 3, wherein a first polishing tool that polishes the chamfer surface on one side of the workpiece and a chamfer surface on the other side of the workpiece are polished. A disk-shaped workpiece polishing apparatus comprising a second polishing tool and polishing both chamfer surfaces of the workpiece at the same time.
JP2001349595A 2001-11-15 2001-11-15 Disc workpiece grinding method and device Pending JP2003145398A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001349595A JP2003145398A (en) 2001-11-15 2001-11-15 Disc workpiece grinding method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001349595A JP2003145398A (en) 2001-11-15 2001-11-15 Disc workpiece grinding method and device

Publications (1)

Publication Number Publication Date
JP2003145398A true JP2003145398A (en) 2003-05-20

Family

ID=19162241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001349595A Pending JP2003145398A (en) 2001-11-15 2001-11-15 Disc workpiece grinding method and device

Country Status (1)

Country Link
JP (1) JP2003145398A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102189460A (en) * 2010-02-26 2011-09-21 中村留精密工业株式会社 Chamferring device of disc-shaped workpiece
TWI569921B (en) * 2012-05-07 2017-02-11 Shin-Etsu Handotai Co Ltd Circular grinding device for circular plate workpiece

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102189460A (en) * 2010-02-26 2011-09-21 中村留精密工业株式会社 Chamferring device of disc-shaped workpiece
JP2011194561A (en) * 2010-02-26 2011-10-06 Nakamura Tome Precision Ind Co Ltd Chamfering device for disk-like workpiece
TWI569921B (en) * 2012-05-07 2017-02-11 Shin-Etsu Handotai Co Ltd Circular grinding device for circular plate workpiece

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