JP2003142769A5 - - Google Patents

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Publication number
JP2003142769A5
JP2003142769A5 JP2002240433A JP2002240433A JP2003142769A5 JP 2003142769 A5 JP2003142769 A5 JP 2003142769A5 JP 2002240433 A JP2002240433 A JP 2002240433A JP 2002240433 A JP2002240433 A JP 2002240433A JP 2003142769 A5 JP2003142769 A5 JP 2003142769A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002240433A
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Japanese (ja)
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JP2003142769A (ja
JP4639571B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2002240433A priority Critical patent/JP4639571B2/ja
Priority claimed from JP2002240433A external-priority patent/JP4639571B2/ja
Publication of JP2003142769A publication Critical patent/JP2003142769A/ja
Publication of JP2003142769A5 publication Critical patent/JP2003142769A5/ja
Application granted granted Critical
Publication of JP4639571B2 publication Critical patent/JP4639571B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002240433A 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法 Expired - Lifetime JP4639571B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002240433A JP4639571B2 (ja) 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10-34403 1998-02-17
JP3440398 1998-02-17
JP10-104254 1998-04-15
JP10425498 1998-04-15
JP2002240433A JP4639571B2 (ja) 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12654998A Division JP3604278B2 (ja) 1998-02-17 1998-05-11 窒化物半導体レーザー素子

Publications (3)

Publication Number Publication Date
JP2003142769A JP2003142769A (ja) 2003-05-16
JP2003142769A5 true JP2003142769A5 (zh) 2006-10-19
JP4639571B2 JP4639571B2 (ja) 2011-02-23

Family

ID=27288410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002240433A Expired - Lifetime JP4639571B2 (ja) 1998-02-17 2002-08-21 窒化物半導体レーザ素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP4639571B2 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4850453B2 (ja) 2005-08-11 2012-01-11 ローム株式会社 半導体発光装置の製造方法及び半導体発光装置
JP4091647B2 (ja) 2006-07-21 2008-05-28 三菱電機株式会社 半導体光素子の製造方法
JP4142084B2 (ja) 2006-10-16 2008-08-27 三菱電機株式会社 半導体光素子の製造方法
JP4272239B2 (ja) 2007-03-29 2009-06-03 三菱電機株式会社 半導体光素子の製造方法
JP5347236B2 (ja) 2007-05-08 2013-11-20 三菱電機株式会社 半導体光素子の製造方法
JP2008311434A (ja) 2007-06-14 2008-12-25 Mitsubishi Electric Corp 半導体光素子の製造方法
JP2009212386A (ja) 2008-03-05 2009-09-17 Mitsubishi Electric Corp 半導体光素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3015371B2 (ja) * 1988-01-20 2000-03-06 株式会社東芝 半導体レーザ
JPH04320027A (ja) * 1991-04-18 1992-11-10 Fujitsu Ltd 半導体装置の製造方法
JPH05226767A (ja) * 1992-02-12 1993-09-03 Fujitsu Ltd 埋め込み型半導体レーザおよびその製造方法
JPH09199798A (ja) * 1996-01-18 1997-07-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP3878707B2 (ja) * 1996-02-21 2007-02-07 シャープ株式会社 窒化物系半導体レーザ素子の製造方法
JP3379619B2 (ja) * 1996-02-28 2003-02-24 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3604278B2 (ja) * 1998-02-17 2004-12-22 日亜化学工業株式会社 窒化物半導体レーザー素子

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