JP2003142424A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003142424A5 JP2003142424A5 JP2002280540A JP2002280540A JP2003142424A5 JP 2003142424 A5 JP2003142424 A5 JP 2003142424A5 JP 2002280540 A JP2002280540 A JP 2002280540A JP 2002280540 A JP2002280540 A JP 2002280540A JP 2003142424 A5 JP2003142424 A5 JP 2003142424A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/967,094 US7071563B2 (en) | 2001-09-28 | 2001-09-28 | Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer |
| US09/967094 | 2001-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003142424A JP2003142424A (ja) | 2003-05-16 |
| JP2003142424A5 true JP2003142424A5 (ja) | 2005-10-27 |
Family
ID=25512300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002280540A Withdrawn JP2003142424A (ja) | 2001-09-28 | 2002-09-26 | 半導体ウェーハの相互接続構造に対するバリア層及びバリア層を堆積するための方法。 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7071563B2 (ja) |
| JP (1) | JP2003142424A (ja) |
| KR (1) | KR20030027784A (ja) |
| GB (1) | GB2380317A (ja) |
| TW (1) | TW533569B (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6503824B1 (en) * | 2001-10-12 | 2003-01-07 | Mosel Vitelic, Inc. | Forming conductive layers on insulators by physical vapor deposition |
| US8271055B2 (en) * | 2002-11-21 | 2012-09-18 | International Business Machines Corporation | Interface transceiver power management method and apparatus including controlled circuit complexity and power supply voltage |
| US7233073B2 (en) * | 2003-07-31 | 2007-06-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| US8308053B2 (en) * | 2005-08-31 | 2012-11-13 | Micron Technology, Inc. | Microfeature workpieces having alloyed conductive structures, and associated methods |
| US20090242385A1 (en) * | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of depositing metal-containing films by inductively coupled physical vapor deposition |
| DE102011006899A1 (de) | 2011-04-06 | 2012-10-11 | Tyco Electronics Amp Gmbh | Verfahren zur Herstellung von Kontaktelementen durch mechanisches Aufbringen von Materialschicht mit hoher Auflösung sowie Kontaktelement |
| US11742282B2 (en) | 2020-08-07 | 2023-08-29 | Micron Technology, Inc. | Conductive interconnects |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4647361A (en) * | 1985-09-03 | 1987-03-03 | International Business Machines Corporation | Sputtering apparatus |
| US5229323A (en) * | 1987-08-21 | 1993-07-20 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device with Schottky electrodes |
| JPS6464318A (en) | 1987-09-04 | 1989-03-10 | Hitachi Ltd | Manufacture of semiconductor device |
| FR2624304B1 (fr) | 1987-12-04 | 1990-05-04 | Philips Nv | Procede pour etablir une structure d'interconnexion electrique sur un dispositif semiconducteur au silicium |
| JPH01296611A (ja) * | 1988-05-25 | 1989-11-30 | Canon Inc | 半導体薄膜堆積法 |
| JPH05129226A (ja) | 1991-11-01 | 1993-05-25 | Seiko Epson Corp | 半導体装置の製造方法 |
| US5604158A (en) * | 1993-03-31 | 1997-02-18 | Intel Corporation | Integrated tungsten/tungsten silicide plug process |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| US5600182A (en) | 1995-01-24 | 1997-02-04 | Lsi Logic Corporation | Barrier metal technology for tungsten plug interconnection |
| US5604140A (en) | 1995-05-22 | 1997-02-18 | Lg Semicon, Co. Ltd. | Method for forming fine titanium nitride film and method for fabricating semiconductor element using the same |
| US5672543A (en) * | 1996-04-29 | 1997-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Volcano defect-free tungsten plug |
| EP0841690B1 (en) * | 1996-11-12 | 2006-03-01 | Samsung Electronics Co., Ltd. | Tungsten nitride (WNx) layer manufacturing method and metal wiring manufacturing method |
| US5985749A (en) * | 1997-06-25 | 1999-11-16 | Vlsi Technology, Inc. | Method of forming a via hole structure including CVD tungsten silicide barrier layer |
| JP3456391B2 (ja) * | 1997-07-03 | 2003-10-14 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US5956609A (en) * | 1997-08-11 | 1999-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing stress and improving step-coverage of tungsten interconnects and plugs |
| US5847463A (en) * | 1997-08-22 | 1998-12-08 | Micron Technology, Inc. | Local interconnect comprising titanium nitride barrier layer |
| US6022800A (en) | 1998-04-29 | 2000-02-08 | Worldwide Semiconductor Manufacturing Corporation | Method of forming barrier layer for tungsten plugs in interlayer dielectrics |
| JP3436132B2 (ja) * | 1998-05-13 | 2003-08-11 | セイコーエプソン株式会社 | 半導体装置 |
| US6372633B1 (en) * | 1998-07-08 | 2002-04-16 | Applied Materials, Inc. | Method and apparatus for forming metal interconnects |
| US6037263A (en) * | 1998-11-05 | 2000-03-14 | Vanguard International Semiconductor Corporation | Plasma enhanced CVD deposition of tungsten and tungsten compounds |
| US20020132473A1 (en) * | 2001-03-13 | 2002-09-19 | Applied Materials ,Inc. | Integrated barrier layer structure for copper contact level metallization |
| US20020144889A1 (en) * | 2001-04-09 | 2002-10-10 | Applied Materials, Inc. | Burn-in process for high density plasma PVD chamber |
-
2001
- 2001-09-28 US US09/967,094 patent/US7071563B2/en not_active Expired - Fee Related
-
2002
- 2002-01-30 TW TW091101551A patent/TW533569B/zh not_active IP Right Cessation
- 2002-02-28 GB GB0204747A patent/GB2380317A/en not_active Withdrawn
- 2002-09-26 JP JP2002280540A patent/JP2003142424A/ja not_active Withdrawn
- 2002-09-27 KR KR1020020058667A patent/KR20030027784A/ko not_active Application Discontinuation