JPS6464318A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6464318A
JPS6464318A JP22014487A JP22014487A JPS6464318A JP S6464318 A JPS6464318 A JP S6464318A JP 22014487 A JP22014487 A JP 22014487A JP 22014487 A JP22014487 A JP 22014487A JP S6464318 A JPS6464318 A JP S6464318A
Authority
JP
Japan
Prior art keywords
film
tungsten
contact hole
reaction
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22014487A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Kobayashi
Masayoshi Saito
Masayasu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22014487A priority Critical patent/JPS6464318A/en
Publication of JPS6464318A publication Critical patent/JPS6464318A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To completely fill a contact hole with W by forming a tungsten silicide or tungsten/tungsten silicide film on an Si by a reaction of WF6 with the Si at the initial of the reaction, and then growing a W film by H2 reducing reaction of the WF6 thereon. CONSTITUTION:A phosphorus glass film 3 is deposited on a thermal oxide film 2 on a P-type silicon crystalline substrate 1. Then, after 1 contact hole is formed at the film 3, As ions are implanted, and heated to form an N<+> type high concentration diffused layer 4 in the contact hole. A tungsten film 6/tungsten silicide film 5 are firmed by a low pressure CVD method with WF6 and N2 on the contact. Thereafter, a tungsten film 6' is further grown on the contact by a low pressure CVD method with the WF6 and H2. Subsequently, aluminum electrodes 7 are formed. Similar result can be obtained by employing a CVD oxide film silicon nitride, BPSG, SOG, etc., instead of the film 3.
JP22014487A 1987-09-04 1987-09-04 Manufacture of semiconductor device Pending JPS6464318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22014487A JPS6464318A (en) 1987-09-04 1987-09-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22014487A JPS6464318A (en) 1987-09-04 1987-09-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6464318A true JPS6464318A (en) 1989-03-10

Family

ID=16746586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22014487A Pending JPS6464318A (en) 1987-09-04 1987-09-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6464318A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2380317A (en) * 2001-09-28 2003-04-02 Agere Systems Inc A barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2380317A (en) * 2001-09-28 2003-04-02 Agere Systems Inc A barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer
US7071563B2 (en) 2001-09-28 2006-07-04 Agere Systems, Inc. Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer

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