JPS6464318A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6464318A JPS6464318A JP22014487A JP22014487A JPS6464318A JP S6464318 A JPS6464318 A JP S6464318A JP 22014487 A JP22014487 A JP 22014487A JP 22014487 A JP22014487 A JP 22014487A JP S6464318 A JPS6464318 A JP S6464318A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tungsten
- contact hole
- reaction
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To completely fill a contact hole with W by forming a tungsten silicide or tungsten/tungsten silicide film on an Si by a reaction of WF6 with the Si at the initial of the reaction, and then growing a W film by H2 reducing reaction of the WF6 thereon. CONSTITUTION:A phosphorus glass film 3 is deposited on a thermal oxide film 2 on a P-type silicon crystalline substrate 1. Then, after 1 contact hole is formed at the film 3, As ions are implanted, and heated to form an N<+> type high concentration diffused layer 4 in the contact hole. A tungsten film 6/tungsten silicide film 5 are firmed by a low pressure CVD method with WF6 and N2 on the contact. Thereafter, a tungsten film 6' is further grown on the contact by a low pressure CVD method with the WF6 and H2. Subsequently, aluminum electrodes 7 are formed. Similar result can be obtained by employing a CVD oxide film silicon nitride, BPSG, SOG, etc., instead of the film 3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22014487A JPS6464318A (en) | 1987-09-04 | 1987-09-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22014487A JPS6464318A (en) | 1987-09-04 | 1987-09-04 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464318A true JPS6464318A (en) | 1989-03-10 |
Family
ID=16746586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22014487A Pending JPS6464318A (en) | 1987-09-04 | 1987-09-04 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464318A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2380317A (en) * | 2001-09-28 | 2003-04-02 | Agere Systems Inc | A barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer |
-
1987
- 1987-09-04 JP JP22014487A patent/JPS6464318A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2380317A (en) * | 2001-09-28 | 2003-04-02 | Agere Systems Inc | A barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer |
US7071563B2 (en) | 2001-09-28 | 2006-07-04 | Agere Systems, Inc. | Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer |
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